JPS5798824A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPS5798824A JPS5798824A JP17558680A JP17558680A JPS5798824A JP S5798824 A JPS5798824 A JP S5798824A JP 17558680 A JP17558680 A JP 17558680A JP 17558680 A JP17558680 A JP 17558680A JP S5798824 A JPS5798824 A JP S5798824A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- parts
- evaporated
- etching
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000011540 sensing material Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
PURPOSE:To increase sensitivity and to enable the high speed operation to be performed by connecting bidge structured light receiving parts having many fine areas in series, providing an infrared ray sensing material on each bridge to form the light receiving part. CONSTITUTION:A pattern comprising regions to become the light receiving parts and regions to become electrodes is formed by etching of an SiO2 film 10 by using photolithography. Then, etching of a silicon ship 1 is performed with the SiO2 film 10 as a mask. Thus SiO2 films 10a and 10b having gaps 2a and 2b under the films and the bridge structured body lines having supporting parts 3a and 3b are formed. Then, the infrared sensitive material, e.g., telluride 11, 11a, and 11b is evaporated. Thereafter electrode parts 20a and 20b are evaporated and formed. Furthermore, lead wires 21a and 21b are drawn, and the infrared detector is formed. If the electric resistance of gold black 19 is sufficiently larger than the resistance of bolometer, insulating layer 18 is not necessarily required.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17558680A JPS5798824A (en) | 1980-12-12 | 1980-12-12 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17558680A JPS5798824A (en) | 1980-12-12 | 1980-12-12 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5798824A true JPS5798824A (en) | 1982-06-19 |
Family
ID=15998665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17558680A Pending JPS5798824A (en) | 1980-12-12 | 1980-12-12 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5798824A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01138429A (en) * | 1987-07-24 | 1989-05-31 | New Japan Radio Co Ltd | Thermopile |
| US5404125A (en) * | 1991-07-19 | 1995-04-04 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348791A (en) * | 1976-10-15 | 1978-05-02 | Hitachi Ltd | Production of infrared ray detector |
-
1980
- 1980-12-12 JP JP17558680A patent/JPS5798824A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348791A (en) * | 1976-10-15 | 1978-05-02 | Hitachi Ltd | Production of infrared ray detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01138429A (en) * | 1987-07-24 | 1989-05-31 | New Japan Radio Co Ltd | Thermopile |
| US5404125A (en) * | 1991-07-19 | 1995-04-04 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
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