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JPS5748230A - Electron ray exposure - Google Patents

Electron ray exposure

Info

Publication number
JPS5748230A
JPS5748230A JP12285480A JP12285480A JPS5748230A JP S5748230 A JPS5748230 A JP S5748230A JP 12285480 A JP12285480 A JP 12285480A JP 12285480 A JP12285480 A JP 12285480A JP S5748230 A JPS5748230 A JP S5748230A
Authority
JP
Japan
Prior art keywords
electron rays
exposure
chip
zonal
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12285480A
Other languages
Japanese (ja)
Other versions
JPS631741B2 (en
Inventor
Eiji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP12285480A priority Critical patent/JPS5748230A/en
Publication of JPS5748230A publication Critical patent/JPS5748230A/en
Publication of JPS631741B2 publication Critical patent/JPS631741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To highten exposure speed, by a method wherein a chip, which is divided into a strip-zonal exposure region narrower than the width able to be exposed only by the deflection of electron rays, is made to travel at the fixed speed while being irradiated with electron rays. CONSTITUTION:A chip T is divided into the strip zonal fields f1, f2 and f3 narrower than the width of a small region able to be exposed by the deflection of electron rays, while the chip T is made to travel with fixed speed in the nearly vertical direction to the zonal region so as to expose the field f1, N1 times to electron rays and simultaneously with the finish thereof the deflection angle of electron rays is returned to the position for exposing the field f2 to start the drawing of the field f2. Thereby, electron ray exposure with high speed as compared with static exposure can be made possible.
JP12285480A 1980-09-04 1980-09-04 Electron ray exposure Granted JPS5748230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12285480A JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12285480A JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Publications (2)

Publication Number Publication Date
JPS5748230A true JPS5748230A (en) 1982-03-19
JPS631741B2 JPS631741B2 (en) 1988-01-13

Family

ID=14846280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12285480A Granted JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Country Status (1)

Country Link
JP (1) JPS5748230A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130121A (en) * 1983-12-16 1985-07-11 Toshiba Mach Co Ltd Electron beam exposure
JP2014138183A (en) * 2013-01-18 2014-07-28 Nuflare Technology Inc Charged particle beam lithography method and charged particle beam lithography apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120686A (en) * 1977-04-21 1977-10-11 Jeol Ltd Electronic ray exposure method
JPS5359374A (en) * 1976-11-09 1978-05-29 Fujitsu Ltd Electron beam exposure unit
JPS5572033A (en) * 1978-11-27 1980-05-30 Toshiba Corp Electron beam exposure device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359374A (en) * 1976-11-09 1978-05-29 Fujitsu Ltd Electron beam exposure unit
JPS52120686A (en) * 1977-04-21 1977-10-11 Jeol Ltd Electronic ray exposure method
JPS5572033A (en) * 1978-11-27 1980-05-30 Toshiba Corp Electron beam exposure device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130121A (en) * 1983-12-16 1985-07-11 Toshiba Mach Co Ltd Electron beam exposure
JP2014138183A (en) * 2013-01-18 2014-07-28 Nuflare Technology Inc Charged particle beam lithography method and charged particle beam lithography apparatus

Also Published As

Publication number Publication date
JPS631741B2 (en) 1988-01-13

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