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JPS5739169A - Preparation of thin film vapor deposited object - Google Patents

Preparation of thin film vapor deposited object

Info

Publication number
JPS5739169A
JPS5739169A JP11448680A JP11448680A JPS5739169A JP S5739169 A JPS5739169 A JP S5739169A JP 11448680 A JP11448680 A JP 11448680A JP 11448680 A JP11448680 A JP 11448680A JP S5739169 A JPS5739169 A JP S5739169A
Authority
JP
Japan
Prior art keywords
evaporated
substance
vapor deposited
laser beam
accelerated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11448680A
Other languages
Japanese (ja)
Inventor
Masahiro Hotta
Yoshiyuki Fukumoto
Yoichi Mikami
Yoji Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP11448680A priority Critical patent/JPS5739169A/en
Publication of JPS5739169A publication Critical patent/JPS5739169A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To easily form a high purity thin film vapor deposited object, in an ion plating vapor deposition method, by carrying out heating and evaporation of a substance to be evaporated by laser beam. CONSTITUTION:The inside of a vacuum tank 1 is evacuated from an exhaust port 2 to a high vacuum degree and laser beam 51 generated from a laser beam generating apparatus 5 positioned at the outside of the vacuum tank 1 is introduced through an irradiating window to be irradiated to a substance to be evaporated in a crucible 4. The substance 3 to be evaporated is heated and evaporated by the laser beam 51 and ionized by thermoelectron generated from a filament 10 of an accelerated electron generating apparatus and accelerated by an anode 11 to be converted to a particle and, further, said particle is accelerated by an accelerating electrode and substrate holder 8 to be impinged on a surface of a substrate material 9 and, thereby, a vapor deposited layer of the substance 3 to be evaporated is formed. By employing a heating method by laser, it is not necessary to heat the whole of the crucible and pollution of the vapor deposited layer due to a crusible constituting substance is eliminated.
JP11448680A 1980-08-19 1980-08-19 Preparation of thin film vapor deposited object Pending JPS5739169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11448680A JPS5739169A (en) 1980-08-19 1980-08-19 Preparation of thin film vapor deposited object

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11448680A JPS5739169A (en) 1980-08-19 1980-08-19 Preparation of thin film vapor deposited object

Publications (1)

Publication Number Publication Date
JPS5739169A true JPS5739169A (en) 1982-03-04

Family

ID=14638948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11448680A Pending JPS5739169A (en) 1980-08-19 1980-08-19 Preparation of thin film vapor deposited object

Country Status (1)

Country Link
JP (1) JPS5739169A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714628A (en) * 1986-02-25 1987-12-22 Commissariat A L'energie Atomique Process and apparatus for treating a material by a thermoionic effect with a view to modifying its physicochemical properties
JPH0218804A (en) * 1988-07-07 1990-01-23 Matsushita Electric Ind Co Ltd Manufacture of high dielectric thin film
WO2023174512A1 (en) * 2022-03-14 2023-09-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Source arrangement and tle system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4961031A (en) * 1972-10-17 1974-06-13
JPS50128688A (en) * 1974-03-29 1975-10-09
JPS5594474A (en) * 1979-01-12 1980-07-17 Ishikawajima Harima Heavy Ind Co Ltd Ion plating apparatus for tube inside using laser beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4961031A (en) * 1972-10-17 1974-06-13
JPS50128688A (en) * 1974-03-29 1975-10-09
JPS5594474A (en) * 1979-01-12 1980-07-17 Ishikawajima Harima Heavy Ind Co Ltd Ion plating apparatus for tube inside using laser beam

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714628A (en) * 1986-02-25 1987-12-22 Commissariat A L'energie Atomique Process and apparatus for treating a material by a thermoionic effect with a view to modifying its physicochemical properties
JPH0218804A (en) * 1988-07-07 1990-01-23 Matsushita Electric Ind Co Ltd Manufacture of high dielectric thin film
WO2023174512A1 (en) * 2022-03-14 2023-09-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Source arrangement and tle system

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