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JPS5723263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5723263A
JPS5723263A JP9857180A JP9857180A JPS5723263A JP S5723263 A JPS5723263 A JP S5723263A JP 9857180 A JP9857180 A JP 9857180A JP 9857180 A JP9857180 A JP 9857180A JP S5723263 A JPS5723263 A JP S5723263A
Authority
JP
Japan
Prior art keywords
layer
oxide film
region
base region
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9857180A
Other languages
Japanese (ja)
Inventor
Takashi Yasujima
Jiro Oshima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9857180A priority Critical patent/JPS5723263A/en
Publication of JPS5723263A publication Critical patent/JPS5723263A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To restrict surface recombination and improve a current amplification factor by providing the surface layer of the base region in a horizontal PNP transistor with a layer, wherein the maximum concentration of N type impurities is distributed on the surface side, for instance, through injection of ions. CONSTITUTION:An N type epitaxial layer 3 is formed on a substrate 1 provided with a burried layer 2 and the epitaxial layer 3 is provided with a diffused isolation layer 4 then to form an emitter region 5, collector regin 6, base taking out diffusion layer 7 and a channel stopper layer 8 masked by an oxide film. Next, the oxide film used as a diffusion mask is removed to again form a thermal oxide film 9, then, for instance, phosphor is injected into the surface layer of the base region masked by a resist 11 to form an N region 12 wherein the maximum concentration of phosphor is distributed on the surface side. Subsequently the resist 11 is removed to form a circuit element after various process of piling up of an interlayer film 13, forming of a contact window and forming a electrodes. Thereby, an internal electric field restrict the surface recombination of minority carriers injected into the base region 10 to improve a current amplification factor of the horizontal PNP transistor.
JP9857180A 1980-07-18 1980-07-18 Semiconductor device Pending JPS5723263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9857180A JPS5723263A (en) 1980-07-18 1980-07-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9857180A JPS5723263A (en) 1980-07-18 1980-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723263A true JPS5723263A (en) 1982-02-06

Family

ID=14223354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9857180A Pending JPS5723263A (en) 1980-07-18 1980-07-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723263A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133671A (en) * 1981-02-10 1982-08-18 Pioneer Electronic Corp Lateral transistor device
JPS6188562A (en) * 1984-10-05 1986-05-06 Rohm Co Ltd Transistor
US5605850A (en) * 1993-09-27 1997-02-25 Sgs-Thomson Microelectronics S.R.L. Method for making a low-noise bipolar transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156376A (en) * 1974-06-05 1975-12-17
JPS5368174A (en) * 1976-11-30 1978-06-17 Nippon Telegr & Teleph Corp <Ntt> Lateral transistor
JPS5371572A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Manufacture of lateral pnp transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50156376A (en) * 1974-06-05 1975-12-17
JPS5368174A (en) * 1976-11-30 1978-06-17 Nippon Telegr & Teleph Corp <Ntt> Lateral transistor
JPS5371572A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Manufacture of lateral pnp transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133671A (en) * 1981-02-10 1982-08-18 Pioneer Electronic Corp Lateral transistor device
JPS6188562A (en) * 1984-10-05 1986-05-06 Rohm Co Ltd Transistor
US5605850A (en) * 1993-09-27 1997-02-25 Sgs-Thomson Microelectronics S.R.L. Method for making a low-noise bipolar transistor
US5828124A (en) * 1993-09-27 1998-10-27 Sgs-Thomson Microelectronics S.R.L. Low-noise bipolar transistor

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