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JPS5722240A - Photomask for proximity exposure - Google Patents

Photomask for proximity exposure

Info

Publication number
JPS5722240A
JPS5722240A JP9707780A JP9707780A JPS5722240A JP S5722240 A JPS5722240 A JP S5722240A JP 9707780 A JP9707780 A JP 9707780A JP 9707780 A JP9707780 A JP 9707780A JP S5722240 A JPS5722240 A JP S5722240A
Authority
JP
Japan
Prior art keywords
resist pattern
end part
photomask
shape
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9707780A
Other languages
Japanese (ja)
Inventor
Shinichi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9707780A priority Critical patent/JPS5722240A/en
Publication of JPS5722240A publication Critical patent/JPS5722240A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the production of any defect in a resist pattern owing to the influence of diffracted light in a proximity exposure method by changing the shape in the end part of the mask pattern of a photomask. CONSTITUTION:In exposure by an actual proximity exposure method by the influence of diffracted light, pattern defects are produced in the end part of a resist pattern by the influence of the diffracted light from three sides in the end part of a mask material. The test results indicate that, if the spacing between the photomask and a wafer is 10-20mum, the end part of the resist pattern which is ought to exist essentially is missing 1-2mum in the longitudinal direction in the positive type resist pattern by a mask material of 2mum linear width. This dictates that the shape of the positive type resist pattern obtained by the mask material of this mask pattern shape is a rectangular shape of A'ABB' (the black spotted part).
JP9707780A 1980-07-15 1980-07-15 Photomask for proximity exposure Pending JPS5722240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9707780A JPS5722240A (en) 1980-07-15 1980-07-15 Photomask for proximity exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9707780A JPS5722240A (en) 1980-07-15 1980-07-15 Photomask for proximity exposure

Publications (1)

Publication Number Publication Date
JPS5722240A true JPS5722240A (en) 1982-02-05

Family

ID=14182572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9707780A Pending JPS5722240A (en) 1980-07-15 1980-07-15 Photomask for proximity exposure

Country Status (1)

Country Link
JP (1) JPS5722240A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58200238A (en) * 1982-05-19 1983-11-21 Toshiba Corp Photomask
JPS61181129A (en) * 1985-02-06 1986-08-13 Fujitsu Ltd Exposing method
JPS63165851A (en) * 1986-12-27 1988-07-09 Sony Corp Forming method for photoresist pattern
KR100652368B1 (en) * 2001-02-14 2006-11-30 삼성전자주식회사 Mask having pattern for correction of optical proximity
JP2008076940A (en) * 2006-09-25 2008-04-03 Toppan Printing Co Ltd Cured pattern and method for manufacturing the same, photomask and exposure device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58200238A (en) * 1982-05-19 1983-11-21 Toshiba Corp Photomask
JPS61181129A (en) * 1985-02-06 1986-08-13 Fujitsu Ltd Exposing method
JPH0321086B2 (en) * 1985-02-06 1991-03-20 Fujitsu Ltd
JPS63165851A (en) * 1986-12-27 1988-07-09 Sony Corp Forming method for photoresist pattern
KR100652368B1 (en) * 2001-02-14 2006-11-30 삼성전자주식회사 Mask having pattern for correction of optical proximity
JP2008076940A (en) * 2006-09-25 2008-04-03 Toppan Printing Co Ltd Cured pattern and method for manufacturing the same, photomask and exposure device

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