JPS57132008A - Measuring method for pattern size - Google Patents
Measuring method for pattern sizeInfo
- Publication number
- JPS57132008A JPS57132008A JP1701381A JP1701381A JPS57132008A JP S57132008 A JPS57132008 A JP S57132008A JP 1701381 A JP1701381 A JP 1701381A JP 1701381 A JP1701381 A JP 1701381A JP S57132008 A JPS57132008 A JP S57132008A
- Authority
- JP
- Japan
- Prior art keywords
- width
- light shielding
- pattern
- sizes
- shielding pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To perform the control of sizes easily in a short time by forming the images of a mask provided with plural pieces of light transmission patterns and light shielding patterns which are opposite to each other on a photoresist film and determining the sizes of the fine patterns from said images. CONSTITUTION:For example, a light shielding pattern 5 with 2mum width, and a light shielding pattern with 2mum width, a light shielding pattern with 1.6mum width and a light transmission pattern with 2.4mum width, a light shielding pattern with 2.4mum width and a light transmission pattern width 1.6mum width are disposed opposite in a photomask. Resist patterns are formed on a wafer by using this photomask. When the width of the resist patterns increases by 0.4mum (figure a), the width of the light transmission pattern 3' and the light shielding pattern 6' coincide and when it decreases by 0.4mum (figure b), the light transmission pattern 4'' and the light shielding pattern 7'' coincide, thus it can be observed with a microscope that the sizes are accepted. Thereby, the control of sizes is accomplished easily in a short time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1701381A JPS57132008A (en) | 1981-02-09 | 1981-02-09 | Measuring method for pattern size |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1701381A JPS57132008A (en) | 1981-02-09 | 1981-02-09 | Measuring method for pattern size |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57132008A true JPS57132008A (en) | 1982-08-16 |
Family
ID=11932108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1701381A Pending JPS57132008A (en) | 1981-02-09 | 1981-02-09 | Measuring method for pattern size |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132008A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951539A (en) * | 1982-09-17 | 1984-03-26 | Nec Corp | Semiconductor device |
| JPS5955029A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Length measurement of pattern width |
| JPS60145637A (en) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | Pattern size measuring method of semiconductor device |
-
1981
- 1981-02-09 JP JP1701381A patent/JPS57132008A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951539A (en) * | 1982-09-17 | 1984-03-26 | Nec Corp | Semiconductor device |
| JPS5955029A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Length measurement of pattern width |
| JPS60145637A (en) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | Pattern size measuring method of semiconductor device |
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