JPS57147274A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57147274A JPS57147274A JP3298281A JP3298281A JPS57147274A JP S57147274 A JPS57147274 A JP S57147274A JP 3298281 A JP3298281 A JP 3298281A JP 3298281 A JP3298281 A JP 3298281A JP S57147274 A JPS57147274 A JP S57147274A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon
- substrate
- implanted
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase the cut off frequency of a semiconductor device by providing two holes on a substrate, and deleting a P-N junction region having larger capacity of insulator of non-active regions as much as possible, thereby reducing the effective capacity. CONSTITUTION:An oxidized film 2 and a polysilicon 17a are formed on a P type semiconductor substrate 1, and two holes are opened by photolithography. In this case, the film 2 is etched excessively, and then ions are implanted in the film, and an N<+> type layer 3 becoming a collector is formed. Then, a polysilicon 17b is again deposited, and a thick oxidized film 18 is formed by dry etching. Subsequently, the film 18 and the polysilicon 17 are selectively etched, the polysilicon 17c is further selectively deposited. Then, the layer 3 is covered with resist, boron ions are implanted so that a P type layer 10 is connected in the substrate, and a channel cut 7 is formed. Similarly, the emitter 12 is formed, and base and collector electrodes 14, 16 are then formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298281A JPS57147274A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298281A JPS57147274A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57147274A true JPS57147274A (en) | 1982-09-11 |
Family
ID=12374078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3298281A Pending JPS57147274A (en) | 1981-03-05 | 1981-03-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147274A (en) |
-
1981
- 1981-03-05 JP JP3298281A patent/JPS57147274A/en active Pending
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