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JPS551136A - Charge transfer system - Google Patents

Charge transfer system

Info

Publication number
JPS551136A
JPS551136A JP7397578A JP7397578A JPS551136A JP S551136 A JPS551136 A JP S551136A JP 7397578 A JP7397578 A JP 7397578A JP 7397578 A JP7397578 A JP 7397578A JP S551136 A JPS551136 A JP S551136A
Authority
JP
Japan
Prior art keywords
film
recesses
gate electrodes
covered
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7397578A
Other languages
Japanese (ja)
Other versions
JPS6213826B2 (en
Inventor
Kunihiko Hirashima
Susumu Sato
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP7397578A priority Critical patent/JPS551136A/en
Publication of JPS551136A publication Critical patent/JPS551136A/en
Publication of JPS6213826B2 publication Critical patent/JPS6213826B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: For raising transfer efficiency, to substantially eliminate a gate clearance by providing gate electrodes with an offset construction.
CONSTITUTION: Small holes are provided at equal intervals on the oxidized film 11 formed on the (100) surface of an N-type Si, and the recesses 13 having (111) surface are formed through anisotropic etching. Said film 11 is removed, a P-type source drain is selectively formed, and said surface of said N-type Si is covered again with oxidized thin film 14. Deep recesses 13' are formed through CF4 resist mask 15 plasma etching. Said surface is covered with oxidized thin film 16, said recesses 13' are completedly filled with poly-Si 17, and the portion between said recesses 13' of thus-obtained film 17 is removed. Insulating film 18 is formed, openings are made, and thus-obtained gate electrodes 17 are interconnected by means of Al wires. Said insulating film 18 is made larger than said thin film 16 in thickness, said gate electrodes 17 are extended onto input electride side (oppositely to transfer direction), and a portion of said film 18 is covered. Thereby, this charge transfer system can be improved in transfer efficiency, charge accumulation capacity and dissolving power.
COPYRIGHT: (C)1980,JPO&Japio
JP7397578A 1978-06-19 1978-06-19 Charge transfer system Granted JPS551136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7397578A JPS551136A (en) 1978-06-19 1978-06-19 Charge transfer system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7397578A JPS551136A (en) 1978-06-19 1978-06-19 Charge transfer system

Publications (2)

Publication Number Publication Date
JPS551136A true JPS551136A (en) 1980-01-07
JPS6213826B2 JPS6213826B2 (en) 1987-03-28

Family

ID=13533594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7397578A Granted JPS551136A (en) 1978-06-19 1978-06-19 Charge transfer system

Country Status (1)

Country Link
JP (1) JPS551136A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083173A (en) * 1986-11-28 1992-01-21 Matsushita Electronics Corporation Charge coupled device for a solid state image pick-up device
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5469915A (en) * 1992-05-29 1995-11-28 Anthony J. Cesaroni Panel heat exchanger formed from tubes and sheets
JP2007292073A (en) * 2006-04-22 2007-11-08 Rittal Gmbh & Co Kg Cooling apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026910A (en) * 1973-07-13 1975-03-20
JPS5132457A (en) * 1974-09-14 1976-03-19 Kobe Steel Ltd KOIRUOPUNAANOJIDOSEIGYOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026910A (en) * 1973-07-13 1975-03-20
JPS5132457A (en) * 1974-09-14 1976-03-19 Kobe Steel Ltd KOIRUOPUNAANOJIDOSEIGYOHOHO

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083173A (en) * 1986-11-28 1992-01-21 Matsushita Electronics Corporation Charge coupled device for a solid state image pick-up device
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5469915A (en) * 1992-05-29 1995-11-28 Anthony J. Cesaroni Panel heat exchanger formed from tubes and sheets
JP2007292073A (en) * 2006-04-22 2007-11-08 Rittal Gmbh & Co Kg Cooling apparatus

Also Published As

Publication number Publication date
JPS6213826B2 (en) 1987-03-28

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