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JPS56144539A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS56144539A
JPS56144539A JP4681980A JP4681980A JPS56144539A JP S56144539 A JPS56144539 A JP S56144539A JP 4681980 A JP4681980 A JP 4681980A JP 4681980 A JP4681980 A JP 4681980A JP S56144539 A JPS56144539 A JP S56144539A
Authority
JP
Japan
Prior art keywords
exposure
wavelength
light
whole surface
positive photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4681980A
Other languages
Japanese (ja)
Inventor
Toshiharu Matsuzawa
Kikuo Doda
Nobuo Hasegawa
Hiroshi Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4681980A priority Critical patent/JPS56144539A/en
Publication of JPS56144539A publication Critical patent/JPS56144539A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To permit the exact formation of a fine pattern by combining a process irradiating light with a specific wavelength at a desired part and that irradiating light with another wavelength at the whole surface wherein a positive photoresist is used. CONSTITUTION:Exposure is done on a positive photoresist film through a mask having a desired pattern by using light having a wavelength of about 200-300nm. After that, exposure is applied to the whole surface by light having a wavelength of about 350-500nm. First of all, with selective exposure applied by light having a wavelength of about 200-300nm, low luminous part and high luminous part become a positive type and a negative type respectively. Next, with the whole surface irradiated by light having a wavelength of 350-500nm, the whole surface acts as a positive photoresist in this case. Therefore, the solubility at an exposed part increase. However, the part received intense exposure by the previous exposure will leave without dissolution as the part is sufficiently hardened. On the other hand, the part received weak exposure has high solubility by the previous exposure. Therefore, the part will completely be removed by development.
JP4681980A 1980-04-11 1980-04-11 Formation of fine pattern Pending JPS56144539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4681980A JPS56144539A (en) 1980-04-11 1980-04-11 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4681980A JPS56144539A (en) 1980-04-11 1980-04-11 Formation of fine pattern

Publications (1)

Publication Number Publication Date
JPS56144539A true JPS56144539A (en) 1981-11-10

Family

ID=12757941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4681980A Pending JPS56144539A (en) 1980-04-11 1980-04-11 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS56144539A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955434A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
JPS61212846A (en) * 1985-03-16 1986-09-20 Goou Kagaku Kogyo Kk Production of wiring board
EP0207893A2 (en) * 1985-06-19 1987-01-07 Ciba-Geigy Ag Image-forming process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955434A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
JPH0349100B2 (en) * 1982-09-24 1991-07-26 Fujitsu Ltd
JPS61212846A (en) * 1985-03-16 1986-09-20 Goou Kagaku Kogyo Kk Production of wiring board
EP0207893A2 (en) * 1985-06-19 1987-01-07 Ciba-Geigy Ag Image-forming process

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