JPH0349100B2 - - Google Patents
Info
- Publication number
- JPH0349100B2 JPH0349100B2 JP57164859A JP16485982A JPH0349100B2 JP H0349100 B2 JPH0349100 B2 JP H0349100B2 JP 57164859 A JP57164859 A JP 57164859A JP 16485982 A JP16485982 A JP 16485982A JP H0349100 B2 JPH0349100 B2 JP H0349100B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- deep
- resist
- ultraviolet rays
- positive resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明はポジ型レジストパターンの形成方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for forming a positive resist pattern.
(2) 技術の背景
LSIの高集積化にともない従来のホトリソグラ
フイより短波長の紫外線（Deep−UV）を用いる
リソグラフイは優れた解像力を示すこと、従来の
露光技術と共通性が高いこと等、微細パターンの
転写技術として注目されている。Deep−UVリソ
グラフイの有用性に伴なつてDeep−UV用レジス
トが調査、研究されているが種々の使用条件を満
足するような優秀なレジストは市販されていな
い。(2) Background of the technology As LSIs become more highly integrated, lithography that uses ultraviolet light (Deep-UV), which has a shorter wavelength than conventional photolithography, exhibits superior resolution and has a high degree of commonality with conventional exposure technology. etc., is attracting attention as a transfer technology for fine patterns. As the usefulness of deep-UV lithography increases, deep-UV resists are being investigated and researched, but excellent resists that satisfy various usage conditions are not commercially available.
(3) 従来技術と問題点
従来、Deep−UV用レジストとしてその１つは
PMMA（ポリメチルメタクリレート）が利用され
ているが、電子線に対すると同様に高解像度であ
るが感度が低いので実用性に乏しい。そこで感度
が高いPMIPK（ポリメチルイソプロピルケトン）
（ODUR−1010：東京応化工業製）及びその増感
タイプ（ODUR−1013：東京応化工業製）が
Deep−UV用レジストとして最も実用的である。(3) Conventional technologies and problems Conventionally, one of the deep-UV resists is
PMMA (polymethyl methacrylate) is used, but although it has high resolution similar to that for electron beams, its sensitivity is low, making it impractical. PMIPK (polymethyl isopropyl ketone) has high sensitivity.
(ODUR-1010: manufactured by Tokyo Ohka Kogyo) and its sensitized type (ODUR-1013: manufactured by Tokyo Ohka Kogyo)
The most practical resist for Deep-UV.
しかしながら、Deep−UV用レジストとして最
も良好なODUR−1013にしてもレジストパター
ン形成の際、ODUR−1013中の定在波の影響を
受けやすいので露光時間を現像エネルギEth1の２
〜３倍となるよう長くしなければならない。又、
露光時間を長くするとマスクパターン幅によつて
パターン巾をコントロールする必要があるために
大きな露光シフト量が必要となる。なおシフト量
は第１図で示したように石英マスク１に被着され
たクロム２の幅l0からレジストパターン３の幅ｌ
を引いた値、すなわちl0−ｌを意味する。更に
ODUR−1013を用いてレジストパターンを形成
する場合、スプレーで容易に現像することが可能
であるが約２分以上の長い現像時間が必要であ
る。現像時間は露光時間を長くすればそれだけ現
像時間が短縮されるが処理能率が悪くなる。 However, even with ODUR-1013, which is the best resist for deep-UV, it is susceptible to the effects of standing waves in ODUR-1013 during resist pattern formation, so the exposure time is reduced by the development energy Eth 1 to 2.
It must be made to be ~3 times as long. or,
When the exposure time is increased, the pattern width needs to be controlled by the mask pattern width, which requires a large exposure shift amount. The amount of shift is from the width l0 of the chromium 2 deposited on the quartz mask 1 to the width l of the resist pattern 3, as shown in FIG.
It means the value after subtracting , that is, l 0 −l. Furthermore
When forming a resist pattern using ODUR-1013, it can be easily developed by spraying, but a long development time of about 2 minutes or more is required. As for the development time, the longer the exposure time, the shorter the development time will be, but the processing efficiency will deteriorate.
(4) 発明の目的
以上の欠点を鑑み本発明は遠紫外線用ポジレジ
ストにおいて現像性を改良することを目的とす
る。(4) Purpose of the Invention In view of the above drawbacks, the present invention aims to improve the developability of a positive resist for deep ultraviolet rays.
(5) 発明の構成
本発明の目的は遠紫外線に感応するポジ型レジ
スト材の第１の領域に、該遠紫外線を選択的に照
射した後、
該第１の領域に、紫外線を選択的にさらに照射
すること
により、前記ポジ型レジスト材にパターンを露光
する工程と、
次いで、該レジスト材を現像し、該第１の領域
を選択的に除去することによつて、ポジ型レジス
トパターンを形成する工程と
を有するポジ型レジストパターンの形成方法によ
つて達成される。(5) Structure of the Invention The object of the present invention is to selectively irradiate a first region of a positive resist material sensitive to far ultraviolet rays with the far ultraviolet rays, and then selectively irradiate the first region with ultraviolet rays. a step of exposing a pattern to the positive resist material by further irradiation; and then developing the resist material and selectively removing the first region to form a positive resist pattern. This is achieved by a method for forming a positive resist pattern, which includes the steps of:
すなわち本発明の方法は従来のように遠紫外線
露光後、すぐに現像を行なつて該レジストをパタ
ーニングするものでなく、遠紫外線露光の後に該
遠紫外線をカツトして紫外線によつて露光を行な
い、その後に現像を行なうものである。 That is, the method of the present invention does not pattern the resist by immediately developing it after exposure to deep ultraviolet rays, as in the conventional method, but after exposing it to deep ultraviolet rays, the far ultraviolet rays are cut off and the resist is exposed to ultraviolet rays. , after which development is performed.
本発明の場合、紫外線露光は１〜５秒間実施す
ればよい。又遠紫外線用ポジレジストとしては市
販のODUR−1013（PMIPK）が好ましい。 In the case of the present invention, UV exposure may be carried out for 1 to 5 seconds. As a positive resist for far ultraviolet rays, commercially available ODUR-1013 (PMIPK) is preferable.
(6) 発明の実施例
以下本発明の実施例を従来例と比較しながら図
面に基づいて説明する。(6) Embodiments of the invention Hereinafter, embodiments of the present invention will be described based on the drawings while comparing them with conventional examples.
第２図に従来例（テストNo.１）の場合と本発明
（テストNo.２，３，４）の場合におけるDeep−
UVポジレジストの残膜厚が０になる透過度、並
びに定在波による該レジストの残渣がなくなる透
過度を示すグラフである。上記テスト１〜４では
レジストとしてODUR−103（東京応化工業製）
を用いた。露光条件としては、従来例の場合
Deep UV露光は、220nmの波長で10mw／cm2の
出力、又は253.7nmの波長で9.0mw／cm2の出力で
25.0秒間実施された。一方本発明の場合は前述の
従来例と同様の露光条件でDeep−UV露光を行な
つた後、ソーダガラス（素通し）をマスクとして
Deep−UVを遮断し、365nmの波長のUV、
3mw／cm2の出力で露光を実施したものであり、
テストNo.２，３，４はUV露光時間を変えて実施
したものでありそれぞれ５秒間、３秒間、１秒間
の露光時間であつた。そして各露光を実施した
後、スプレー（装置GCA6801：市販元−住友商
事）を用いて120秒間、スプレー現像を行なつた
ものである。第３図によれば残膜厚が０になる透
過度（露光量）は従来例であるNo.１の場合が最も
少ないものの、定在波による残渣がなくなる透過
度は46.7％と本発明の場合の38.9より大きい値で
あつた。 Figure 2 shows the deep-
It is a graph showing the transmittance at which the residual film thickness of the UV positive resist becomes 0 and the transmittance at which the residual film of the resist due to standing waves disappears. In tests 1 to 4 above, ODUR-103 (manufactured by Tokyo Ohka Kogyo) was used as a resist.
was used. As for the exposure conditions, in the case of conventional example
Deep UV exposure has an output of 10 mw/cm 2 at a wavelength of 220 nm or an output of 9.0 mw/cm 2 at a wavelength of 253.7 nm.
It was carried out for 25.0 seconds. On the other hand, in the case of the present invention, after performing deep-UV exposure under the same exposure conditions as the conventional example, soda glass (clear through) is used as a mask.
Deep-UV blocking, 365nm wavelength UV,
Exposure was carried out at an output of 3 mw/cm 2 ,
Test Nos. 2, 3, and 4 were conducted with different UV exposure times, and the exposure times were 5 seconds, 3 seconds, and 1 second, respectively. After each exposure, spray development was performed for 120 seconds using a sprayer (apparatus GCA6801, commercially available from Sumitomo Corporation). According to FIG. 3, the transmittance (exposure amount) at which the residual film thickness becomes 0 is the lowest in the case of No. 1, which is the conventional example, but the transmittance at which there is no residue due to standing waves is 46.7%, which is the case of the present invention. The value was larger than 38.9 in the case.
第３Ａ図及び第３Ｂ図はそれぞれテストNo.１、
及び２の透過度30.2％の時の現像状況を示したも
のである。４はレジストODUR1013のパターン
であり５は該レジストの残渣である。第３Ａ図、
第３Ｂ図から明らかに第３Ｂ図（本発明）の場合
の方が残渣が著るしく少ないことが云える。なお
テストNo.３，４の場合もほゞテストNo.２と同様の
少ない残渣であつた。 Figures 3A and 3B are test No. 1, respectively.
This figure shows the development situation when the transmittance was 30.2% for Samples and Samples 2 and 2. 4 is the pattern of the resist ODUR1013, and 5 is the residue of the resist. Figure 3A,
It can be clearly seen from FIG. 3B that the amount of residue is significantly less in the case of FIG. 3B (invention). It should be noted that in the cases of Test Nos. 3 and 4, the amount of residue was almost the same as in Test No. 2.
又透過度が40〜50％程度迄はシフト量が0.35〜
0.40μｍ程度と、従来の場合と本発明の場合にお
いてあまり差はないが透過度が60％以上になると
シフト量が約0.1μｍ程度従来の場合の方が大きく
なつた。このように本発明の方が現像性が向上し
ているのはDeep−UV露光後更にUV露光するこ
とによつてODUR1013の定在波の強度分布が波
形の凹凸を緩やかにするように変形せしめられる
ものと考えられる。 Also, the shift amount is 0.35~ until the transmittance is about 40~50%.
At about 0.40 μm, there is not much difference between the conventional case and the present invention, but when the transmittance exceeds 60%, the shift amount becomes about 0.1 μm larger in the conventional case. The reason why the developability of the present invention is improved is that by further UV exposure after deep-UV exposure, the intensity distribution of the standing wave of ODUR1013 is deformed so that the unevenness of the waveform becomes gentle. It is considered that the
(7) 発明の効果
以上の説明から本発明により露光時間又は現像
時間を短縮することが可能であり更に露光シフト
量を少なくすることが出来る。(7) Effects of the Invention From the above explanation, the present invention makes it possible to shorten the exposure time or development time, and also to reduce the amount of exposure shift.
第１図は露光シフト量を説明するための概略図
であり、第２図は従来例と本発明の現像性を比較
した結果を示したグラフであり、第３Ａ図及び第
３Ｂ図は透過度30.2％の場合のそれぞれ従来例及
び本発明のレジスト残渣を示したものである。
１……石英マスク、２……クロム、３，４……
レジストパターン、５……レジスト残渣。
FIG. 1 is a schematic diagram for explaining the amount of exposure shift, FIG. 2 is a graph showing the results of comparing the developability of the conventional example and the present invention, and FIGS. 3A and 3B are graphs showing the transmittance. The resist residues of the conventional example and the present invention are shown in the case of 30.2%. 1... Quartz mask, 2... Chrome, 3, 4...
Resist pattern, 5...Resist residue.
Claims (1)
の領域に、該遠紫外線を選択的に照射した後、 該第１の領域に、紫外線を選択的にさらに照射
すること により、前記ポジ型レジスト材にパターンを露光
する工程と、 次いで、該レジスト材を現像し、該第１の領域
を選択的に除去することによつて、ポジ型レジス
トパターンを形成する工程と を有するポジ型レジストパターンの形成方法。[Claims] 1. First positive resist material sensitive to deep ultraviolet rays
selectively irradiating the region with the deep ultraviolet rays, and then selectively irradiating the first region with the ultraviolet rays to expose a pattern on the positive resist material; A method for forming a positive resist pattern, comprising the steps of: developing a material and selectively removing the first region to form a positive resist pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164859A JPS5955434A (en) | 1982-09-24 | 1982-09-24 | Method for forming positive resist pattern for far ultraviolet rays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164859A JPS5955434A (en) | 1982-09-24 | 1982-09-24 | Method for forming positive resist pattern for far ultraviolet rays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5955434A JPS5955434A (en) | 1984-03-30 |
| JPH0349100B2 true JPH0349100B2 (en) | 1991-07-26 |
Family
ID=15801269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164859A Granted JPS5955434A (en) | 1982-09-24 | 1982-09-24 | Method for forming positive resist pattern for far ultraviolet rays |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955434A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51122146A (en) * | 1975-04-18 | 1976-10-26 | Iwasaki Electric Co Ltd | A process for curing and drying of ultraviolet-curing coating compound , ink or a resin plate |
| JPS5492801A (en) * | 1977-12-30 | 1979-07-23 | Ibm | Photolithographic method |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
| JPS56144539A (en) * | 1980-04-11 | 1981-11-10 | Hitachi Ltd | Formation of fine pattern |
-
1982
- 1982-09-24 JP JP57164859A patent/JPS5955434A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51122146A (en) * | 1975-04-18 | 1976-10-26 | Iwasaki Electric Co Ltd | A process for curing and drying of ultraviolet-curing coating compound , ink or a resin plate |
| JPS5492801A (en) * | 1977-12-30 | 1979-07-23 | Ibm | Photolithographic method |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
| JPS56144539A (en) * | 1980-04-11 | 1981-11-10 | Hitachi Ltd | Formation of fine pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5955434A (en) | 1984-03-30 |
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