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JPS55108742A - Forming method of minute pattern - Google Patents

Forming method of minute pattern

Info

Publication number
JPS55108742A
JPS55108742A JP1665679A JP1665679A JPS55108742A JP S55108742 A JPS55108742 A JP S55108742A JP 1665679 A JP1665679 A JP 1665679A JP 1665679 A JP1665679 A JP 1665679A JP S55108742 A JPS55108742 A JP S55108742A
Authority
JP
Japan
Prior art keywords
pattern
forming method
substrate
minute pattern
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1665679A
Other languages
Japanese (ja)
Inventor
Hisanao Tsuge
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1665679A priority Critical patent/JPS55108742A/en
Publication of JPS55108742A publication Critical patent/JPS55108742A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To facilitate the forming of minute and high dense pattern by limiting the incidence angle of ion beam within 30 degrees or below while a sample is turned in the ion etching means of semiconductor integrated circuits. CONSTITUTION:A treated material 12 is attached on the substrate 11 to form a mask pattern 13 on the surface. While turning the substrate 11, slanting incident angle etching is performed by the ion beam with the angle theta of 30 deg. or below to form a pattern 31 which leaves a mask material 32. The mask material 32 shall be eliminated.
JP1665679A 1979-02-14 1979-02-14 Forming method of minute pattern Pending JPS55108742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1665679A JPS55108742A (en) 1979-02-14 1979-02-14 Forming method of minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1665679A JPS55108742A (en) 1979-02-14 1979-02-14 Forming method of minute pattern

Publications (1)

Publication Number Publication Date
JPS55108742A true JPS55108742A (en) 1980-08-21

Family

ID=11922381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1665679A Pending JPS55108742A (en) 1979-02-14 1979-02-14 Forming method of minute pattern

Country Status (1)

Country Link
JP (1) JPS55108742A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595452A (en) * 1985-03-11 1986-06-17 Oerlikon-Buhrle U.S.A. Inc. Method and apparatus for plasma etching
JPS62238626A (en) * 1986-04-09 1987-10-19 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595452A (en) * 1985-03-11 1986-06-17 Oerlikon-Buhrle U.S.A. Inc. Method and apparatus for plasma etching
JPS62238626A (en) * 1986-04-09 1987-10-19 Nec Corp Manufacture of semiconductor device

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