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JPS56115534A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56115534A
JPS56115534A JP1886180A JP1886180A JPS56115534A JP S56115534 A JPS56115534 A JP S56115534A JP 1886180 A JP1886180 A JP 1886180A JP 1886180 A JP1886180 A JP 1886180A JP S56115534 A JPS56115534 A JP S56115534A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
patterned
layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1886180A
Other languages
Japanese (ja)
Other versions
JPS596508B2 (en
Inventor
Takaaki Katou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1886180A priority Critical patent/JPS596508B2/en
Publication of JPS56115534A publication Critical patent/JPS56115534A/en
Publication of JPS596508B2 publication Critical patent/JPS596508B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain the material to be patterned having a tapered sectional form by a method wherein a taper-shaped electron beam resist layer is formed on the material to be patterned having the etching rate of almost equal to the electron beam resist and then an etching is performed. CONSTITUTION:A material layer 12 to be patterned such as an Al and the like, and a negative type electron beam resist layer 13 such as a CPO and the like are formed on a substrate 11 successively. Then an electron beam 14 is irradiated and exposed limitedly within the scope of the outlines and form of the pattern, a developing process is performed and a resist pattern 13a, having the sectional form of gradually reduced thickness, is formed. Then, the patterning layer 12a having the similar sectional form to the resist pattern 13a can be obtained by performing an etching on the surface using an ion beam 15. Also, the pattern having the optionally controlled film thickness for each section of the pattern can be formed easily.
JP1886180A 1980-02-18 1980-02-18 Pattern formation method Expired JPS596508B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1886180A JPS596508B2 (en) 1980-02-18 1980-02-18 Pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1886180A JPS596508B2 (en) 1980-02-18 1980-02-18 Pattern formation method

Publications (2)

Publication Number Publication Date
JPS56115534A true JPS56115534A (en) 1981-09-10
JPS596508B2 JPS596508B2 (en) 1984-02-13

Family

ID=11983315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1886180A Expired JPS596508B2 (en) 1980-02-18 1980-02-18 Pattern formation method

Country Status (1)

Country Link
JP (1) JPS596508B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008285695A (en) * 2007-05-15 2008-11-27 Canon Inc Method for working substrate
US7511311B2 (en) 2002-08-01 2009-03-31 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511311B2 (en) 2002-08-01 2009-03-31 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8035118B2 (en) 2002-08-01 2011-10-11 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8330179B2 (en) 2002-08-01 2012-12-11 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US8742438B2 (en) 2002-08-01 2014-06-03 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
JP2008285695A (en) * 2007-05-15 2008-11-27 Canon Inc Method for working substrate

Also Published As

Publication number Publication date
JPS596508B2 (en) 1984-02-13

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