JPS54137985A - Field effect semiconductor device of insulation gate type - Google Patents
Field effect semiconductor device of insulation gate typeInfo
- Publication number
- JPS54137985A JPS54137985A JP4616378A JP4616378A JPS54137985A JP S54137985 A JPS54137985 A JP S54137985A JP 4616378 A JP4616378 A JP 4616378A JP 4616378 A JP4616378 A JP 4616378A JP S54137985 A JPS54137985 A JP S54137985A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- ions
- gate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To make the operation speed high and to imporve the degree of integration by burying a source region certain-distance away from a gate insulating film. CONSTITUTION:On N epitaxial layer 32 on N<+>-type Si substrate 31, SiO233 is formed and film 33 is etched by a mask of Si3N4. After the injection of B ions, P layer 36 and SiO237 are formed through thermal oxidation, a selective opening is made in films 34 and 33, and B ions are injected to form P layer 38. After films 34 and 33 are removed, SiO239 is provided, B ions are injected into the entire surface to form B ion injection layer 40, and a pn junction is made certain-distance away from gate film 39 under control. Next, an opening is made in poly-Si42 and layer 39 and phosphorus is thermally diffused to provide N+ layer 43 and P layer 41. At this time, film 39 should be away from the edge of P layer 38 at distance L. When the depth of layer 43 is set l, the effective channel length is L-l and there is a little influence of the channel length upon characteristics. Lastly, electrodes of gate 45, drain 46 and source 47 are provided. In this constitution, the occupied area of the element is reduced and high-frequency characteristics are also excellent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4616378A JPS54137985A (en) | 1978-04-18 | 1978-04-18 | Field effect semiconductor device of insulation gate type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4616378A JPS54137985A (en) | 1978-04-18 | 1978-04-18 | Field effect semiconductor device of insulation gate type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54137985A true JPS54137985A (en) | 1979-10-26 |
Family
ID=12739337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4616378A Pending JPS54137985A (en) | 1978-04-18 | 1978-04-18 | Field effect semiconductor device of insulation gate type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54137985A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393157A (en) * | 1986-10-08 | 1988-04-23 | Nippon Denso Co Ltd | Manufacture of semiconductor device |
| US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
| US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
-
1978
- 1978-04-18 JP JP4616378A patent/JPS54137985A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
| US5434095A (en) * | 1986-03-21 | 1995-07-18 | Sundstrand Corporation | Method for controlling electrical breakdown in semiconductor power devices |
| US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
| JPS6393157A (en) * | 1986-10-08 | 1988-04-23 | Nippon Denso Co Ltd | Manufacture of semiconductor device |
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