JPH1192968A - Dry etching device and plasma chemical vapor phase deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the efficiency of an apparatus and the uniformity of CVD deposition by rotating an antenna of one turn thereby moving the break of the antenna together with the time. SOLUTION: A substrate 1 is set on an electrode 12 and the inside of a chamber 4 is evacuated. An etching gas or gas for CVD is introduced into this chamber. High-frequency electric power is fed to the antenna 5 from a high-frequency power source 11 to make the introduced gas plasmic. The antenna 5 is rotated by a motor 10. The separate high-frequency power is fed to the electrode 12 from a bias power source 14 and the ions in the plasma are withdrawn into the substrate 1 by their self-biasing effect, by which etching or CVD is started. The plasma formed in the chamber 4 is not spatially fixed in the nonuniformity of the antenna shape as the antenna 5 rotates at all times, by which the uniformity of the ions arriving at the surface of the substrate 1 is assured. As a result, the etching speed and the surface distribution of the deposition speed of the CVD are improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus used in a manufacturing process of a semiconductor integrated circuit (hereinafter abbreviated as IC), a liquid crystal display (hereinafter abbreviated as LCD), a thin-film magnetic head (hereinafter abbreviated as TFH) and the like. And a chemical vapor deposition (hereinafter abbreviated as CVD) apparatus.

[0002]

2. Description of the Related Art ICs, LCDs, TFHs, and the like are manufactured by depositing thin films having various functions on an appropriate substrate and patterning the thin films into required shapes. At this time, what is called a dry etching device is used to remove unnecessary portions, and a rare gas is turned into plasma and electrically accelerated to physically remove the substance to be etched, or to remove the plasma and the substance to be etched. Reacts chemically and is removed as a volatile compound. On the other hand, a physical vapor deposition (hereinafter abbreviated as PVD) method such as a vacuum evaporation or a sputtering method and a CVD method according to the present invention are mainly used for depositing a thin film. In recent years, it has been particularly noted that a compound thin film can be formed and a dense thin film having a three-dimensional network can be formed.

One of the factors that influence the performance of these devices is a plasma generating mechanism. In recent years, an inductively coupled plasma (hereinafter abbreviated as ICP) device capable of generating high-density plasma with a simple structure has been proposed. Attention has been paid. In this method, a gas introduced into a vacuum apparatus is excited by an external antenna or coil to which a high frequency is applied to be turned into plasma, and the antenna and the gas are inductively coupled via a dielectric. It is said that an ICP apparatus can obtain a plasma density approximately two orders of magnitude higher than that of a general parallel plate electrode type plasma generation apparatus, so that a remarkable improvement in etching rate and thin film deposition rate is observed. Above all, the antenna in which the high-frequency application antenna is formed in a minimum of approximately one turn has a small inductance, so that the power loss is small and the antenna is considered to be more efficient.

[0004] This one-turn type ICP apparatus will be described with reference to FIGS. 3 and 4. FIGS. 3 and 4 differ only in the shape of the dielectric portion between a bell shape and a flat plate, and have the same basic principle. There is no fundamental difference between the etching apparatus and the CVD apparatus as well, except that the introduced gas is a reactive or inert gas for etching and the CVD is a material gas such as silane or methane. The basic configuration of the apparatus includes a chamber 4 having a quartz bell jar 2 (FIG. 3) or a quartz plate 3 (FIG. 4), a bias applying electrode 12 for holding the slider substrate 1, and an exhaust port connected to a vacuum pump. 6, a gas introduction port for supplying an etching gas or a material gas, and a one-turn antenna 5 for plasma excitation. Here, the antenna 5 is 13.5
It is connected to a 6 MHz high frequency power supply 11 via a matching unit (not shown), and the electrode 12 has a power of 400 kHz.
z bias power supply 14 via a blocking capacitor.

The function of the apparatus will be described by taking etching as an example.
First, the substrate 1 to be etched is set on the electrode 12, and the inside of the chamber 4 is evacuated by a vacuum pump. After that, an etching gas is introduced from the gas introduction port 7,
High frequency power is supplied to the antenna 5 from the high frequency power supply 11,
The introduced gas is excited by plasma. Thereafter, when another high-frequency power is supplied to the electrode 12 from the bias power supply 14, the electrode automatically has a negative charge due to the area ratio of the electrode to the ground and the action of the blocking capacitor 13. This is called the self-bias effect. Since most of the ions in the plasma have a positive charge, the ions enter the electrode 12 and the substrate 1. The substrate is etched by these ions. C
In the VD apparatus, when a material gas is introduced from the gas introduction port 7 instead of the etching gas, a thin film corresponding to the introduced material gas is formed and deposited on the substrate 1.

[0006] As described above, 1 has a relatively simple structure.
Although it is a turn-type ICP device, there is a problem in plasma uniformity because the antenna 5 has approximately one turn. That is, the antenna which is rounded in the shape of a coil has one cut as a matter of course. This is unavoidable to roll the antenna into a coil shape,
The non-uniformity of the plasma caused by the cuts led to variations in the etching rate and the deposition rate.
In many etching processes used for ICs and the like, a material that is difficult to be etched, that is, a so-called etch stop layer is often provided under the layer to be etched, so that a slight variation in the etching rate does not matter, It has been pointed out that the possibility of lowering the dielectric breakdown from the potential difference is accompanied by miniaturization of the element. In addition, for example, in the etching of a slider material used in a hard disk drive, there is no etch stop layer, so that there is a problem that variations in etching depth directly lead to variations in head flying height. On the other hand, CVD
In this case, the thickness of the deposited film was different due to the non-uniformity of the plasma, which also led to the variation of the product.

It has been pointed out that the number of turns of the antenna has been increased in order to ensure the uniformity of the plasma. However, it has been pointed out that the efficiency is reduced due to the increased inductance, and the overall etching rate and deposition rate are reduced. ing.

[0008]

As described above, a dry etching apparatus or a CVD apparatus using an ICP that uses a substantially one-turn antenna in pursuit of efficiency may have a problem in uniformity. It has been desired to introduce a dry etching apparatus or a CVD apparatus having both of them.

The present invention solves these problems and provides a dry etching apparatus or CV having both efficiency and uniformity.
D device is provided.

[0010]

By turning the antenna for one turn, the gap between the antennas is moved with time so that the plasma weak area does not stay at one place. As a configuration of the device, a motor for rotating the antenna and an electrical connection mechanism for supplying power to the rotating antenna are added to those shown in FIGS. As a result, a uniform etching rate and a uniform deposition rate can be obtained over a wide area in the chamber while minimizing a decrease in efficiency.

The operation of the present invention will be described with reference to FIGS. FIGS. 1 and 2 show an etching apparatus or a plasma CVD apparatus according to the present invention, and FIGS.
In this example, a rotation mechanism of an antenna is added to the conventional devices shown in FIG. At the time of etching or CVD, first, the substrate 1 is set on the electrode 12, and the inside of the chamber 4 is evacuated by a vacuum pump. Thereafter, an etching gas or a material gas for CVD is introduced from the gas introduction port 7, high frequency power is supplied from the high frequency power supply 11 to the antenna 5, and the introduced gas is turned into plasma. At that time, the motor 10
To rotate. The rotation of the motor is decelerated by phase control and gears and transmitted to the antenna via the conduction disk. The high frequency power for plasma excitation is transmitted from the high frequency power source 11 to the ring formed on the conduction disk and connected to the antenna by the brush 9. Thereafter, another high-frequency power is applied to the electrode 12 from the bias power supply 14, and ions in the plasma are drawn into the substrate 1 by the self-bias effect, whereby etching or CVD is started. Whether etching or CVD is performed depends on the type of gas introduced from the introduction port 7. In the plasma formed in the chamber, since the antenna 5 is constantly rotating, the nonuniformity of the antenna shape is not fixed spatially, and therefore, the uniformity of ions reaching the substrate is ensured. As a result, the surface distribution of the etching rate and the CVD deposition rate is improved.

As described above, according to the present invention, the uniformity of etching or CVD deposition can be improved without lowering the efficiency of an ICP device having a one-turn antenna. Hereinafter, an embodiment will be described.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A closed chamber provided with a port which is evacuated by one or more sets of vacuum pumps and into which a reactive gas or a supporting gas necessary for etching can be introduced, and a part of the chamber. Is made of a dielectric material such as quartz, and a gas introduced into the chamber through the dielectric material is turned into plasma from an antenna to which high frequency is applied, which is provided on the atmosphere side, and is further installed inside the chamber. A dry etching apparatus for etching an etching target substrate by applying another high frequency to an electrode on which the etching target substrate is set, wherein the antenna rotates.

[0014]

【Example】

(Example 1) An example in which an alumina / titanium carbide composite ceramics substrate is etched using an ICP apparatus according to the present invention will be described. Here, the ICP apparatus shown in FIG. 1 was used. The diameter of the quartz bell jar 2 is 20 cm. First, the substrate 1 of alumina / titanium carbide to be etched was set on the electrode 12, and the inside of the chamber 4 was evacuated by a vacuum pump. A resist mask is formed on the substrate 1 in advance so as to obtain a desired shape (not shown). Thereafter, a mixed gas of boron trichloride and argon (4: 6) was introduced as an etching gas from the gas introduction port 7, and the pressure was maintained at 10 mtorr. 13.56 MHz, 500 from the high frequency power supply 11 to the antenna 5
High-frequency power of W was supplied to convert the introduced gas into plasma.
At this time, the motor 10 is rotated at 10 rpm to rotate the antenna 5, and the high-frequency power is transmitted to the antenna via the brush 9 and the conduction disk 8. Thereafter, high-frequency power of 400 kHz and 100 W was applied to the electrode 12 from the bias power supply 14, and ions in the plasma were drawn into the substrate 1 by the self-bias effect to start etching.
After the etching was completed, the resist was peeled off and washed, and the amount of etching was measured. As a result, an etching rate and a variation of 300 nm / min averaged in a 100 mm square area.
Good uniformity of 3% was obtained.

(Embodiment 2) Another example of etching an alumina / titanium carbide composite ceramics substrate using an ICP apparatus according to the present invention will be described. Here, Figure 2
Was used. The diameter of the quartz plate 3 is 2
2 cm. First, the substrate 1 of alumina / titanium carbide to be etched was set on the electrode 12, and the inside of the chamber 4 was evacuated by a vacuum pump. A resist mask is formed on the substrate 1 in advance so as to obtain a desired shape (not shown). Then, gas introduction port 7
A mixed gas of boron trichloride and argon of 4: 6 was introduced as an etching gas, and the pressure was maintained at 10 mtorr. 13.56M from the high frequency power supply 11 to the antenna 5
A high-frequency power of 500 Hz and 500 W was supplied to convert the introduced gas into plasma. At this time, the motor 10 is rotated at 10 rpm to rotate the antenna 5, and the high-frequency power is transmitted to the antenna via the brush 9 and the conduction disk 8. Then, 400 kHz, 1
A high-frequency power of 00 W was supplied, ions in the plasma were drawn into the substrate 1 by the self-bias effect, and etching was started.

After the etching was completed, the resist was peeled off and washed, and the amount of etching was measured. As a result, an etching rate of 340 nm / min and an average uniformity of ± 3% were obtained in an area of 100 mm square.

(Embodiment 3) Using an ICP apparatus according to the present invention, diamond carbon (hereinafter referred to as DL) is formed on a silicon substrate.
An example of depositing a film will be described. Here, the ICP apparatus shown in FIG. 1 was used as a CVD apparatus.
The diameter of the quartz bell jar 2 is 20 cm. First 4
An inch circle silicon substrate 1 is set on the electrode 12,
The inside of the chamber 4 was evacuated by a vacuum pump. Thereafter, methane was introduced as a material gas from the gas introduction port 7, and the pressure was maintained at 1 torr. A high frequency power of 13.56 MHz and 500 W was applied to the antenna 5 from the high frequency power supply 11 to convert the introduced gas into plasma. At this time, the motor 10 is rotated at 10 rpm to rotate the antenna 5, and the high-frequency power is transmitted to the antenna via the brush 9 and the conduction disk 8. Thereafter, a bias power supply 14 is applied to the electrode 12.
A higher frequency power of 400 kHz and 70 W was applied, ions in the plasma were drawn into the substrate 1 by the self-bias effect, and the deposition was started.

After the deposition was completed, the film thickness was measured by a spectroscopic ellipsometer. As a result, a DLC film having excellent uniformity of ± 3% was formed over the entire surface of the 4-inch circle.

(Embodiment 4) Another example of depositing a DLC film on a silicon substrate using the ICP apparatus according to the present invention will be described. Here, the ICP device shown in FIG.
Used as D device. The diameter of the quartz plate 3 is 22 cm. First, a 4-inch round silicon substrate 1 was set on the electrode 12, and the inside of the chamber 4 was evacuated by a vacuum pump. Thereafter, methane was introduced as a material gas from the gas introduction port 7, and the pressure was maintained at 1 torr. Antenna 5
A high frequency power of 13.56 MHz and 500 W was supplied from the high frequency power supply 11 to convert the introduced gas into plasma. At that time, the motor 10 is rotated at 10 rpm, and the antenna 5
, And the high-frequency power is transmitted to the antenna via the brush 9 and the conduction disk 8. Thereafter, high-frequency power of 400 kHz and 70 W was applied to the electrode 12 from the bias power supply 14, and ions in the plasma were drawn into the substrate 1 by the self-bias effect to start deposition.

After the deposition was completed, the film thickness was measured with a spectroscopic ellipsometer. As in Example 3, a DLC film having excellent uniformity of ± 3% was formed over the entire surface of the 4-inch circle.

(Embodiment 5) An example in which alumina / titanium carbide ceramics is etched using the ICP apparatus shown in FIG. 3 will be described. The ICP device used here is the same as the device used in the first embodiment in structure, size, etc., except that the antenna 5 does not rotate. When the substrate 1 of alumina / titanium carbide ceramics was etched by the same process as in Example 1 using the ICP apparatus shown in FIG. 3, the variation in the etching amount in a 100 mm square area was ± 10%, which was different from Example 1. In comparison, the results were clearly inferior in uniformity. In particular, the etching rate in a region near the portion where the arc of the antenna 5 was cut was low.

(Embodiment 6) An example in which alumina / titanium carbide ceramics is etched using the ICP apparatus shown in FIG. 4 will be described. The ICP device used here is the same as the device used in the second embodiment, such as the structure and size, except that the antenna 5 does not rotate. When the alumina / titanium carbide ceramics substrate 1 was etched by the same process as in Example 2 using the ICP apparatus shown in FIG. 4, the variation in the etching amount in a 100 mm square area was ± 10%. In comparison, the results were clearly inferior in uniformity. In particular, the etching rate in a region near the portion where the arc of the antenna 5 was cut was low.

(Embodiment 7) An example in which a DLC film is deposited using the ICP apparatus shown in FIG. 3 will be described. The ICP device used here is the same as the device used in the third embodiment, such as the structure and size, except that the antenna 5 does not rotate. When a DLC film was deposited on the silicon substrate 1 by the same process as in Example 3 using the ICP apparatus shown in FIG. 3, a film having a variation of ± 10% was obtained over the entire surface of a 4-inch circle. Compared to No. 3, the result was clearly inferior in uniformity. In particular, the film thickness in a region near the portion where the arc of the antenna 5 was broken was small.

(Embodiment 8) An example in which a DLC film is deposited using the ICP apparatus shown in FIG. 4 will be described. The ICP device used here is the same as the device used in the fourth embodiment, such as the structure and size, except that the antenna 5 does not rotate. When a DLC film was deposited on a silicon substrate 1 by the same process as in Example 4 using the ICP apparatus shown in FIG. 4, a film having a variation of ± 10% was obtained over the entire surface of a 4-inch circle. As compared with No. 4, the result was clearly inferior in uniformity. In particular, the film thickness in a region near the portion where the arc of the antenna 5 was broken was small.

The steps and conditions used in the above embodiments are not limited to those described above, and it goes without saying that the ICP apparatus according to the present invention can be applied to any steps performed using an ICP apparatus.

[0026]

As described above, according to the present invention, the uniformity can be improved without lowering the efficiency of an ICP device having a highly efficient one-turn antenna. Therefore, the present invention widely contributes to higher precision in manufacturing processes such as IC, LCD, and TFH that require a so-called dry process.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing an example of an ICP device according to the present invention.

FIG. 2 is a conceptual diagram showing another example of an ICP device according to the present invention.

FIG. 3 is a conceptual diagram showing an example of a conventional ICP device.

FIG. 4 is a conceptual diagram showing another example of a conventional ICP device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Quartz bell jar 3 Quartz plate 4 Chamber 5 Antenna 6 Exhaust port 7 Gas introduction port 8 Conducting disk 9 Brush 10 Motor 11 High frequency power supply 12 Electrode 13 Blocking capacitor 14 Bias power supply

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/3065 H01L 21/302 B

Claims (2)

[Claims] 1. A closed chamber which is evacuated by at least one set of vacuum pumps and has a port through which a reactive gas, a supporting gas, and the like necessary for etching can be introduced. The gas introduced into the chamber through the dielectric is turned into plasma from the antenna to which the high frequency is applied, which is provided on the atmosphere side, and is further installed inside the chamber. A dry etching apparatus for etching another substrate by applying another high frequency to an electrode on which the substrate is set, wherein the antenna rotates. 2. A closed chamber which is evacuated by at least one set of evacuation pumps and has a port through which a material gas, a supporting gas, and the like necessary for chemical vapor deposition can be introduced. The part is made of a dielectric material such as quartz, and the gas introduced into the chamber through the dielectric material from the antenna to which the high frequency is applied provided on the atmosphere side is turned into plasma, and further installed inside the chamber. A plasma chemical vapor deposition apparatus for depositing a thin film on the substrate by applying another high frequency to the electrode on which the substrate is set, wherein the antenna rotates. Phase deposition equipment.