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JPH1177367A - Solder composition - Google Patents

Solder composition

Info

Publication number
JPH1177367A
JPH1177367A JP9240875A JP24087597A JPH1177367A JP H1177367 A JPH1177367 A JP H1177367A JP 9240875 A JP9240875 A JP 9240875A JP 24087597 A JP24087597 A JP 24087597A JP H1177367 A JPH1177367 A JP H1177367A
Authority
JP
Japan
Prior art keywords
solder
solder composition
composition
contained
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9240875A
Other languages
Japanese (ja)
Other versions
JP3760586B2 (en
Inventor
Kiyotaka Maekawa
清隆 前川
Hidekiyo Takaoka
英清 高岡
Masayuki Hamao
正行 浜尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP24087597A priority Critical patent/JP3760586B2/en
Publication of JPH1177367A publication Critical patent/JPH1177367A/en
Application granted granted Critical
Publication of JP3760586B2 publication Critical patent/JP3760586B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide the Pb-free solder which is heat resistant, and excellent in strength and workability by containing Sn, Cu and Ge. SOLUTION: When Ge is added to the Sn-Cu solder, Ge is diffused in the solder to refine the structure, and the strength of the solder is increased. In a molten condition, a thin and stable oxide film of Ge is formed on the solder surface to suppress oxidation of the solder. Preferably, Cu is contained by 0.1-9 wt.% and Ge is contained by 0.001-0.5 wt.% based on 100 wt.% solder composition. More preferably, Cu is contained by 0.7-3 wt.% and Ge is contained by 0.01-0.1 wt.% based on 100 wt.% solder composition. At least one kind of Ag, Sb, Zn, Bi and In may be added to the solder composition as the sub- composition. The solder composition can be fed in any shape including rod-shape and wire-shape.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品の半田付
けに使用される半田組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder composition used for soldering electronic parts.

【0002】[0002]

【従来の技術】従来より、電子部品の接合には、Sn−
Pb系半田が使用されている。中でも高温での作業とな
る被覆エナメル線剥離用半田は、Cu線喰われや半田耐
熱性の問題からSn−70PbやSn−85Pbといっ
たPbリッチな高融点半田が用いられてきた。
2. Description of the Related Art Conventionally, when joining electronic parts, Sn-
Pb-based solder is used. Above all, Pb-rich high melting point solders such as Sn-70Pb and Sn-85Pb have been used as the solder for stripping the coated enamel wire which is required to be operated at a high temperature due to the problem of erosion of the Cu wire and solder heat resistance.

【0003】近年、地球環境を考慮して、Pbを含まな
いSn−Ag系やSn−Ag−Bi系半田が開発されて
いる。
[0003] In recent years, Sn-Ag-based and Sn-Ag-Bi-based solders containing no Pb have been developed in consideration of the global environment.

【0004】しかし、上述のSn−Ag系やSn−Ag
−Bi系半田では、半田の融点が低く、電子部品用とし
ては半田耐熱性が不十分であり、特に被覆エナメル線剥
離用としてはCu線喰われ性という問題があったため、
融点が高く、半田耐熱性に優れたものを必要としてい
た。そこで、さまざまな検討を行なった結果、Sn−C
u系半田が上記特性に優れたものとして使用されてい
た。
However, the above-mentioned Sn-Ag system and Sn-Ag
In the case of -Bi solder, the melting point of the solder is low, and the solder heat resistance is insufficient for electronic components, and there is a problem that the Cu wire is eroded, particularly for coating enamel wire peeling.
A material having a high melting point and excellent solder heat resistance was required. Therefore, as a result of various studies, Sn-C
A u-based solder has been used as having excellent characteristics.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、Sn−
Cu系半田は、半田ドロス量が増大し、作業性やコスト
に大きな影響を与えることや、Cu量が過剰に存在する
場合には、Sn−Cu金属間化合物の影響で強度が低下
するという問題があった。
However, Sn-
The problem of the Cu-based solder is that the solder dross amount increases, greatly affecting workability and cost, and when the Cu amount is excessive, the strength decreases due to the influence of the Sn-Cu intermetallic compound. was there.

【0006】そこで、本発明の目的は、従来のSn−P
b系の高融点半田が有する半田耐熱性を維持しつつ、強
度、作業性に優れた、半田組成物を提供することであ
る。
Therefore, an object of the present invention is to provide a conventional Sn-P
An object of the present invention is to provide a solder composition which is excellent in strength and workability while maintaining the solder heat resistance of a b-type high melting point solder.

【0007】[0007]

【課題を解決するための手段】本願発明は、上述の課題
を解決するために、半田組成物を完成するに至った。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention has completed a solder composition.

【0008】本願第1の発明の半田組成物は、Snと、
Cuと、Geとを含有することを特徴としている。
[0008] The solder composition of the first invention of the present application comprises:
It is characterized by containing Cu and Ge.

【0009】Sn−Cu系半田にGeを添加すると、G
eが半田中に分散し、組織が微細化するため半田の強度
が上昇する。また、溶融時には、Geが半田表面に薄く
安定な酸化被膜を形成することで、半田の酸化を抑制す
ることが可能になる。
When Ge is added to Sn—Cu based solder, G
e is dispersed in the solder and the structure becomes finer, so that the strength of the solder increases. In addition, at the time of melting, Ge forms a thin and stable oxide film on the surface of the solder, so that oxidation of the solder can be suppressed.

【0010】また、本願第2の発明の半田組成物におい
て、Cuは、前記半田組成物100wt%のうち、0.
1〜9wt%であることが好ましい。
[0010] In the solder composition according to the second aspect of the present invention, Cu is included in 0.1% of the solder composition of 100 wt%.
It is preferably 1 to 9 wt%.

【0011】また、本願第3の発明の半田組成物におい
て、Geは、前記半田組成物100wt%のうち、0.
001〜0.5wt%であることが好ましい。
In the solder composition according to the third aspect of the present invention, Ge is contained in 0.1% of the solder composition of 100 wt%.
It is preferably 001 to 0.5 wt%.

【0012】また、本願第4の発明の半田組成物におい
て、Cuは、前記半田組成物100wt%のうち、0.
7〜3wt%に選ばれる。
Further, in the solder composition according to the fourth aspect of the present invention, Cu is contained in 0.1% of the solder composition of 100% by weight.
It is selected from 7 to 3 wt%.

【0013】また、本願第5の発明の半田組成物におい
て、Geは、前記半田組成物100wt%のうち、0.
01〜0.1wt%に選ばれる。
In the solder composition according to the fifth aspect of the present invention, Ge is contained in 0.1% of the solder composition of 100 wt%.
It is selected from 01 to 0.1 wt%.

【0014】また、本願第6の発明の半田組成物におい
て、副成分として、Ag,Sb,Zn,Bi,Inのう
ち少なくとも1種類を添加してもよい。
In the solder composition according to the sixth aspect of the present invention, at least one of Ag, Sb, Zn, Bi, and In may be added as a sub-component.

【0015】[0015]

【発明の実施の形態】以下、本発明の半田組成物の実施
の形態について説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the solder composition of the present invention will be described.

【0016】表1に、試料番号1〜試料番号23の半田
組成を示す。なお、表1中の総合評価は、◎:非常に良
好である、○:良好である、△:実用上差し支えない、
×:実用上問題あり、を示している。
Table 1 shows the solder compositions of Sample Nos. 1 to 23. The overall evaluations in Table 1 are as follows: :: very good, 、: good, Δ: practically acceptable,
X: There is a problem in practical use.

【0017】[0017]

【表1】 [Table 1]

【0018】表1に示す半田組成物が得られるよう棒状
半田を作製し、Cu線喰われ時間、ドロス量、および引
張り強度を測定した。
A bar-shaped solder was prepared so as to obtain the solder composition shown in Table 1, and the Cu wire erosion time, dross amount, and tensile strength were measured.

【0019】Cu線喰われ時間については、U字に成形
したCu線の片側を保持した状態で480℃の半田槽に
浸漬し、Cu線が消失して倒れるまでの時間をCu線喰
われ時間とした。表1中の評価は、○:十分に長い時間
を要した、△:実用上問題のない時間を要した、×:実
用上問題あり、を示している。
With regard to the Cu wire erosion time, the Cu wire was immersed in a solder bath at 480 ° C. while holding one side of the U-shaped Cu wire, and the time until the Cu wire disappeared and fell was determined as the Cu wire erosion time. And The evaluations in Table 1 show that ○: took a sufficiently long time, Δ: took a time that had no practical problem, and x: had a practical problem.

【0020】ドロス量については、480℃で半田を溶
融させ、半田面に回転スキ−ジを当て、20rpmで3
0分間攪拌したときに発生するドロス量を測定した。
Regarding the dross amount, the solder was melted at 480 ° C., and a rotary squeegee was applied to the solder surface, and the dross amount was 3 rpm at 20 rpm.
The amount of dross generated when stirring for 0 minutes was measured.

【0021】また引張り強度については、Cu板とCu
線を半田で接合したものの引張り強度を用いた。
Regarding the tensile strength, the Cu plate and the Cu
The tensile strength of the wire joined by solder was used.

【0022】表1に示すように、Cu量が0.1wt%
未満の場合には、Cu線喰われが発生しやすく好ましく
ない。一方、Cu量が9wt%を超える場合には、引張
り強度が低下するため好ましくない。より好ましくは、
Cu量は0.1から9wt%の範囲であり、さらには
0.7〜3wt%の範囲が好ましい。
As shown in Table 1, the amount of Cu was 0.1 wt%.
If the ratio is less than the above, Cu line erosion is likely to occur, which is not preferable. On the other hand, if the Cu content exceeds 9 wt%, the tensile strength is undesirably reduced. More preferably,
The amount of Cu is in the range of 0.1 to 9 wt%, and more preferably 0.7 to 3 wt%.

【0023】また、Geの量が0.001wt%未満の
場合はドロス量への効果は見られず、逆に0.5wt%
を超える場合には、効果が飽和してしまう。Geは高価
であり、Geの使用量が多くなるほどコストアップの要
因となることから、Ge量は0.001から0.5wt
%の範囲が好ましく、さらには0.01〜0.1wt%
の範囲が好ましい。
When the amount of Ge is less than 0.001 wt%, the effect on the dross amount is not seen, and
If it exceeds, the effect will be saturated. Ge is expensive, and as the amount of Ge used increases, the cost increases. Therefore, the amount of Ge is 0.001 to 0.5 wt.
% Is preferable, and 0.01 to 0.1 wt% is more preferable.
Is preferable.

【0024】また表1から、Sn,Cu,Geの他に、
Ag,Sb,Zn,Bi,Inのうち少なくとも1種類
を加えても同様の効果を示すことがわかる。
Further, from Table 1, in addition to Sn, Cu and Ge,
It can be seen that the same effect is obtained even when at least one of Ag, Sb, Zn, Bi, and In is added.

【0025】また、この半田組成物については、棒状で
もペ−スト状でもワイヤー状でもあらゆる形状による供
給が可能であり、形状は問わない。
The solder composition can be supplied in any shape, such as a bar, paste, or wire, and the shape is not limited.

【0026】ここで、本発明においては、半田組成とし
てSnとCuとGeの3成分系を示しているが、不可避
不純物を含むものであってもよい。不可避不純物として
は半田を製造するときに混入する元素もしくは元々入っ
ていた元素、例えばPb,Bi,Naなどがあげられ
る。
Here, in the present invention, a three-component system of Sn, Cu and Ge is shown as the solder composition, but it may contain an unavoidable impurity. The unavoidable impurities include elements that are mixed in when manufacturing the solder or elements originally contained, for example, Pb, Bi, and Na.

【0027】[0027]

【発明の効果】上述のように、本発明によれば、従来の
Sn−Pb高融点半田と同等の作業性を有し、かつPb
フリー半田化が可能な、半田組成物を得ることができ
る。
As described above, according to the present invention, the workability is equivalent to that of the conventional Sn-Pb high melting point solder, and
A solder composition capable of free soldering can be obtained.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 Snと、Cuと、Geとを含有すること
を特徴とする半田組成物。
1. A solder composition comprising Sn, Cu, and Ge.
【請求項2】 前記Cuは、前記半田組成物100wt
%のうち0.1〜9wt%であることを特徴とする、請
求項1に記載の半田組成物。
2. The method according to claim 1, wherein the Cu is 100 wt% of the solder composition.
The solder composition according to claim 1, wherein the content of the solder composition is 0.1 to 9 wt%.
【請求項3】 前記Geは、前記半田組成物100wt
%のうち0.001〜0.5wt%であることを特徴と
する、請求項1または請求項2に記載の半田組成物。
3. The method according to claim 1, wherein the Ge is 100 wt% of the solder composition.
%. The solder composition according to claim 1, wherein the content is 0.001 to 0.5 wt%.
【請求項4】 前記Cuは、前記半田組成物100wt
%のうち0.7〜3wt%であることを特徴とする、請
求項1から請求項3のいずれかに記載の半田組成物。
4. The method according to claim 1, wherein the Cu comprises 100 wt% of the solder composition.
The solder composition according to any one of claims 1 to 3, wherein the content of the solder composition is 0.7 to 3 wt%.
【請求項5】 前記Geは、前記半田組成物100wt
%のうち0.01〜0.1wt%であることを特徴とす
る、請求項1から請求項4のいずれかに記載の半田組成
物。
5. The solder according to claim 1, wherein the Ge is 100 wt.
The solder composition according to any one of claims 1 to 4, wherein the content is 0.01 to 0.1 wt%.
【請求項6】 副成分として、Ag,Sb,Zn,B
i,Inのうち少なくとも1種類を添加したことを特徴
とする、請求項1から請求項5のいずれかに記載の半田
組成物。
6. Ag, Sb, Zn, B as subcomponents
The solder composition according to claim 1, wherein at least one of i and In is added.
JP24087597A 1997-09-05 1997-09-05 Solder composition Expired - Lifetime JP3760586B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24087597A JP3760586B2 (en) 1997-09-05 1997-09-05 Solder composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24087597A JP3760586B2 (en) 1997-09-05 1997-09-05 Solder composition

Publications (2)

Publication Number Publication Date
JPH1177367A true JPH1177367A (en) 1999-03-23
JP3760586B2 JP3760586B2 (en) 2006-03-29

Family

ID=17066004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24087597A Expired - Lifetime JP3760586B2 (en) 1997-09-05 1997-09-05 Solder composition

Country Status (1)

Country Link
JP (1) JP3760586B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1112803A1 (en) * 1999-12-28 2001-07-04 Kabushiki Kaisha Toshiba Solder material, device using the same and manufacturing process thereof
JP2002057177A (en) * 2000-08-09 2002-02-22 Hitachi Metals Ltd Solder ball and its manufacturing method
WO2002068146A1 (en) * 2001-02-27 2002-09-06 Sumida Corporation Unleaded solder alloy and electronic components using it
JPWO2003020468A1 (en) * 2001-08-30 2004-12-16 スミダコーポレーション株式会社 Lead-free solder alloy and electronic component using the same
JP2005101102A (en) * 2003-09-22 2005-04-14 Toshiba Corp Semiconductor laser element sub-mount
JP2009071315A (en) * 2008-10-20 2009-04-02 Sumida Corporation Coil part
JP2011121062A (en) * 2009-12-08 2011-06-23 Mitsubishi Electric Corp Solder alloy and method for manufacturing solder alloy
JP2017094368A (en) * 2015-11-26 2017-06-01 株式会社リソー技研 Solder for enamel-coated electric cable, and soldering method for enamel-coated electric cable
JP2022515254A (en) * 2018-12-27 2022-02-17 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド Lead-free solder composition
US11285569B2 (en) 2003-04-25 2022-03-29 Henkel Ag & Co. Kgaa Soldering material based on Sn Ag and Cu

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62230493A (en) * 1986-03-31 1987-10-09 Taruchin Kk Solder alloy
JPS6313689A (en) * 1986-07-03 1988-01-20 エンゲルハ−ド・コ−ポレ−シヨン Low toxic corrosion-resistant solder
JPH0234295A (en) * 1988-07-19 1990-02-05 Jw Harris Co Inc Solder composition and usage thereof
JPH06297186A (en) * 1993-04-20 1994-10-25 Fukuda Metal Foil & Powder Co Ltd Sn base low melting point brazing filler metal
JPH106075A (en) * 1996-06-13 1998-01-13 Nippon Handa Kk Lead-free solder alloy
JPH10286688A (en) * 1997-04-15 1998-10-27 Murata Mfg Co Ltd Soldered article

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62230493A (en) * 1986-03-31 1987-10-09 Taruchin Kk Solder alloy
JPS6313689A (en) * 1986-07-03 1988-01-20 エンゲルハ−ド・コ−ポレ−シヨン Low toxic corrosion-resistant solder
JPH0234295A (en) * 1988-07-19 1990-02-05 Jw Harris Co Inc Solder composition and usage thereof
JPH06297186A (en) * 1993-04-20 1994-10-25 Fukuda Metal Foil & Powder Co Ltd Sn base low melting point brazing filler metal
JPH106075A (en) * 1996-06-13 1998-01-13 Nippon Handa Kk Lead-free solder alloy
JPH10286688A (en) * 1997-04-15 1998-10-27 Murata Mfg Co Ltd Soldered article

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1112803A1 (en) * 1999-12-28 2001-07-04 Kabushiki Kaisha Toshiba Solder material, device using the same and manufacturing process thereof
JP2002057177A (en) * 2000-08-09 2002-02-22 Hitachi Metals Ltd Solder ball and its manufacturing method
WO2002068146A1 (en) * 2001-02-27 2002-09-06 Sumida Corporation Unleaded solder alloy and electronic components using it
JPWO2003020468A1 (en) * 2001-08-30 2004-12-16 スミダコーポレーション株式会社 Lead-free solder alloy and electronic component using the same
US11285569B2 (en) 2003-04-25 2022-03-29 Henkel Ag & Co. Kgaa Soldering material based on Sn Ag and Cu
JP4528510B2 (en) * 2003-09-22 2010-08-18 株式会社東芝 Submount for semiconductor laser elements
JP2005101102A (en) * 2003-09-22 2005-04-14 Toshiba Corp Semiconductor laser element sub-mount
JP2009071315A (en) * 2008-10-20 2009-04-02 Sumida Corporation Coil part
JP2011121062A (en) * 2009-12-08 2011-06-23 Mitsubishi Electric Corp Solder alloy and method for manufacturing solder alloy
JP2017094368A (en) * 2015-11-26 2017-06-01 株式会社リソー技研 Solder for enamel-coated electric cable, and soldering method for enamel-coated electric cable
JP2022515254A (en) * 2018-12-27 2022-02-17 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド Lead-free solder composition
TWI820277B (en) * 2018-12-27 2023-11-01 美商阿爾發金屬化工公司 Lead-free solder compositions
US12115602B2 (en) 2018-12-27 2024-10-15 Alpha Assembly Solutions Inc. Lead-free solder compositions

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