JPH1154656A - Manufacture of solder bump electrode and solder bump electrode - Google Patents
Manufacture of solder bump electrode and solder bump electrodeInfo
- Publication number
- JPH1154656A JPH1154656A JP22097297A JP22097297A JPH1154656A JP H1154656 A JPH1154656 A JP H1154656A JP 22097297 A JP22097297 A JP 22097297A JP 22097297 A JP22097297 A JP 22097297A JP H1154656 A JPH1154656 A JP H1154656A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- point solder
- ball
- melting point
- bump electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
- H01L2224/1148—Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半田バンプ電極の形
成方法及び半田バンプ電極に関し、特にＢＧＡパッケー
ジの電極形成方法に関する。The present invention relates to a method for forming a solder bump electrode and a solder bump electrode, and more particularly to a method for forming a BGA package electrode.
【０００２】[0002]
【従来の技術】図３は、従来のＢＧＡ（Ｂａｌｌ Ｇｒ
ｉｄ Ａｒｒａｙ）パッケージの電極形成方法の説明す
るための工程断面図である。FIG. 3 shows a conventional BGA (Ball Gr).
FIG. 4 is a process cross-sectional view for describing a method of forming an electrode of an (id Array) package.
【０００３】パッケージ基板３裏面の配線パターン２を
保護するため、ソルダーレジスト１によりコーティング
する（図２（ａ）参照）。[0003] In order to protect the wiring pattern 2 on the back surface of the package substrate 3, it is coated with a solder resist 1 (see FIG. 2A).
【０００４】そして半田ボールを形成する端子部にのみ
開口部を作り（図２（ｂ）参照）、液状の半田を適量た
らす（図２（ｃ）参照）。An opening is formed only in a terminal portion for forming a solder ball (see FIG. 2B), and an appropriate amount of liquid solder is applied (see FIG. 2C).
【０００５】液状の半田は表面張力により球状となって
固まり半田ボール（バンプ）５が形成される（図２
（ｄ）参照）。The liquid solder becomes spherical due to surface tension and solidifies to form a solder ball (bump) 5 (FIG. 2).
(D)).
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来の方法により製造した半田ボールは、システム基板
（実装基板）への実装時に、実装基板とＢＧＡパッケー
ジとの間に所定の間隔を保持させることが困難な場合が
でてくる、という問題点を有している。However, when the solder balls manufactured by the above-described conventional method are mounted on a system board (mounting board), a predetermined distance can be maintained between the mounting board and the BGA package. There is a problem that a difficult case may occur.
【０００７】また、実装温度のバラツキによって半田ボ
ールのつぶれ量が異なることによって、実装基板と各々
のＢＧＡパッケージとの間の間隔がまちまちになる、と
いう問題点も有している。Another problem is that the distance between the mounting board and each of the BGA packages varies because the amount of crushing of the solder balls varies depending on the variation in the mounting temperature.
【０００８】したがって、本発明は上記問題点に鑑みて
なされたものであって、その目的は、基板とパッケージ
との間に所定の間隔を保持させ、また実装温度のバラツ
キに対しても安定して実装できるようにする半導体バン
プの製造方法及び該バンプを備えた半導体装置を提供す
ることにある。SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems, and has as its object to maintain a predetermined distance between a substrate and a package and to stabilize the mounting temperature. It is an object of the present invention to provide a method of manufacturing a semiconductor bump which can be mounted by mounting and a semiconductor device provided with the bump.
【０００９】[0009]
【課題を解決するための手段】前記目的を達成するた
め、本発明の半田バンプ電極は、高融点ハンダ球の外周
を低融点ハンダで取り囲むようにした構造を有する。To achieve the above object, a solder bump electrode according to the present invention has a structure in which a high melting point solder ball is surrounded by a low melting point solder.
【００１０】また、本発明の半田バンプ電極は、導電性
金属球の外周を低融点ハンダで取り囲むようにした構造
を有することを特徴とする。Further, the solder bump electrode of the present invention is characterized in that it has a structure in which the outer periphery of a conductive metal ball is surrounded by low melting point solder.
【００１１】本発明の半田バンプ電極の製造方法は、
（ａ）パッケージ基板の裏面の配線パターンを保護する
ためのソルダーレジストの半田ボールを形成する端子部
に設けられた開口部に、液状の高融点半田を滴下し前記
高融点半田が凝固して球状の半田ボールを形成し、
（ｂ）その上から液状の低融点半田を滴下して、前記高
融点半田ボールを覆うようにして、低融点の半田ボール
を形成する、ことを特徴とする。The method for manufacturing a solder bump electrode according to the present invention comprises:
(A) A liquid high-melting-point solder is dropped into an opening provided in a terminal portion for forming a solder ball of a solder resist for protecting a wiring pattern on a back surface of a package substrate, and the high-melting-point solder solidifies and becomes spherical. Forming solder balls of
(B) A low-melting-point solder ball is formed by dropping a liquid low-melting-point solder from above to cover the high-melting-point solder ball.
【００１２】また本発明の半田バンプ電極の製造方法
は、（ａ）パッケージ基板の裏面の配線パターンを保護
するためのソルダーレジストの半田ボールを形成する端
子部に設けられた開口部において、前記端子部に導電性
接着剤で導電性金属球を接着し、（ｂ）その上に液状の
低融点半田を滴下して、前記導電性金属球を覆うように
して、低融点の半田ボールを形成する、ことを特徴とす
る。The method of manufacturing a solder bump electrode according to the present invention may further comprise the steps of: A conductive metal ball is adhered to the portion with a conductive adhesive, and (b) a liquid low melting point solder is dropped thereon to form a low melting point solder ball so as to cover the conductive metal ball. , Characterized in that.
【００１３】[0013]
【発明の実施の形態】本発明の実施の形態について以下
に説明する。本発明の製造方法は、その好ましい実施の
形態において、パッケージ基板（図１の３）全面に塗布
されたソルダーレジスト（図１の１）に半田ボールを形
成する端子部（図１の２）にのみ開口部を作り、液状に
した高融点半田（図１の４）を少量たらし、この少量の
半田は表面張力により、小さな球状となって固まり高融
点半田ボール（図１の５）を形成し、この上から、液状
にした低融点ハンダ（図１の６）を適量垂らし、上記高
融点半田ボールを覆うようにして、低融点の半田ボール
を（図１の７）を形成する。Embodiments of the present invention will be described below. In the manufacturing method of the present invention, in a preferred embodiment, a terminal portion (2 in FIG. 1) for forming a solder ball on a solder resist (1 in FIG. 1) applied to the entire surface of the package substrate (3 in FIG. 1). Only an opening is made and a small amount of liquid high-melting solder (4 in FIG. 1) is removed, and this small amount of solder becomes small spheres due to surface tension to form a high-melting solder ball (5 in FIG. 1). Then, an appropriate amount of liquid low melting point solder (6 in FIG. 1) is dripped from above, and a low melting point solder ball (7 in FIG. 1) is formed so as to cover the high melting point solder ball.
【００１４】また本発明は、別の実施の形態において
は、前記端子部に導電性接着剤で導電性金属球を接着
し、その上に液状の低融点半田を滴下して、前記導電性
金属球を覆うようにして、低融点の半田ボールを形成す
るようにしてもよい。In another embodiment of the present invention, a conductive metal ball is adhered to the terminal portion with a conductive adhesive, and a liquid low melting point solder is dropped on the conductive metal ball to form a conductive metal ball. A low melting point solder ball may be formed so as to cover the ball.
【００１５】本発明においては、高融点ハンダ球もしく
は導電性金属球の外周を低融点ハンダで取り囲む構造と
し、高融点ハンダ球もしくは導電性金属球の大きさを、
求める所定の間隔にすることによって、基板とパッケー
ジとの間に所定の間隔を保持させ、また実装温度のバラ
ツキに対しても安定して実装することができるという効
果を奏する。In the present invention, the outer periphery of the high melting point solder ball or the conductive metal sphere is surrounded by the low melting point solder.
By setting the required predetermined interval, it is possible to maintain the predetermined interval between the substrate and the package, and to stably mount the semiconductor device even when the mounting temperature varies.
【００１６】[0016]
【実施例】上記した本発明の実施の形態について更に詳
細に説明すべく、本発明の実施例について図面を参照し
て説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention;
【００１７】図１は、本発明の第一の実施例の製造方法
を説明する工程断面図である。FIG. 1 is a process sectional view for explaining a manufacturing method according to a first embodiment of the present invention.
【００１８】本実施例においては、まずパッケージ基板
３の裏面の配線パターン２を保護するため、ソルダーレ
ジスト１によりコーティングする（図１（ａ）参照）。In the present embodiment, first, in order to protect the wiring pattern 2 on the back surface of the package substrate 3, it is coated with a solder resist 1 (see FIG. 1A).
【００１９】そして半田ボールを形成する端子部にのみ
開口部を作り（図１（ｂ）参照）、液状にした高融点半
田４を少量たらす（図１（ｃ）参照）。Then, openings are formed only in the terminals for forming the solder balls (see FIG. 1B), and a small amount of the high-melting-point solder 4 liquefied is applied (see FIG. 1C).
【００２０】この少量の半田は表面張力により、小さな
球状となって固まる（図１（ｄ）の５参照）。The small amount of solder hardens into small spheres due to surface tension (see 5 in FIG. 1D).
【００２１】この上から、液状にした低融点ハンダ６を
適量たらし（図１（ｅ）参照）、形成した高融点半田ボ
ール５を覆うようにして、低融点の半田ボール７を形成
する（図１（ｆ）参照）。From above, an appropriate amount of liquefied low melting point solder 6 is applied (see FIG. 1E), and low melting point solder balls 7 are formed so as to cover the formed high melting point solder balls 5 (see FIG. 1E). FIG. 1 (f)).
【００２２】高融点半田ボールの材料としては、１０％
Ｓｎ−９０％Ｐｂや１００％ＰｂもしくはＰｂ−Ａｌ，
Ｓｎ−Ａｌ等が好ましく、低融点半田ボールの材料とし
ては、６０％Ｓｎ−４０％Ｐｂ等が好ましい。The material of the high melting point solder ball is 10%
Sn-90% Pb, 100% Pb or Pb-Al,
Preferably, Sn-Al or the like is used, and as a material of the low melting point solder ball, 60% Sn-40% Pb or the like is preferable.
【００２３】また、この２種類の半田の融点の差は、好
ましくは３０℃以上が望まれる。これは、実装時の温度
のバラツキによって、高融点半田まで融けだすという事
態の発生を避ける為である。The difference between the melting points of the two types of solder is preferably 30 ° C. or more. This is for avoiding the occurrence of a situation in which the solder melts up to the high melting point due to a variation in the temperature during mounting.
【００２４】図２は、本発明の第二の実施例の製造方法
を説明するための工程断面図である。FIG. 2 is a process sectional view for explaining a manufacturing method according to a second embodiment of the present invention.
【００２５】本実施例は、前記第一の実施例の高融点半
田ボールを導電性金属球８に置き換えたものである。In this embodiment, the high melting point solder balls of the first embodiment are replaced with conductive metal balls 8.
【００２６】この製造方法は、まず端子部２に導電性粘
着ペースト９（例えば、ＡｇペーストやＡｕ−Ｓｉペー
スト等）を塗り、そこに導電性金属球８を置き固定する
（図２（ａ）参照）。In this manufacturing method, first, a conductive adhesive paste 9 (for example, Ag paste or Au-Si paste or the like) is applied to the terminal portion 2, and a conductive metal ball 8 is placed and fixed thereon (FIG. 2A). reference).
【００２７】その上から、液状にした低融点ハンダ６を
適量たらし（図２（ｂ）参照）、形成した導電性金属球
８を覆うようにして、低融点の半田ボール７を形成する
（図２（ｃ）参照）。From above, an appropriate amount of liquefied low-melting solder 6 is applied (see FIG. 2B), and low-melting solder balls 7 are formed so as to cover the formed conductive metal balls 8 (see FIG. 2B). FIG. 2 (c)).
【００２８】なお、パッケージに形成される全ての半田
ボールに対して、このような構造の半田ボールを形成す
る必要は無く、実験によって、つぶれ量が大きくなると
判断された部分数点（例えば４隅に１個ずつ）にのみ形
成するだけでも、高い効果が得られる。It is not necessary to form a solder ball having such a structure for all the solder balls formed on the package, and it is determined by experiment that the amount of crushing becomes large (for example, four corners). High effect can be obtained even if only one of them is formed.
【００２９】[0029]
【発明の効果】以上説明したように、本発明によれば、
ＢＧＡパッケージにおいて、高融点ハンダボールもしく
は導電性金属球の周りを低融点ハンダボールで覆うよう
な構造にし、高融点ハンダ球もしくは導電性金属球の大
きさを求める所定の間隔にすることにより、高融点半田
ボールや導電性金属球は実装時にも融けることがない
為、その大きさの分だけ、基板とパッケージとの間に間
隔を保持させることが出来るという効果を奏する。As described above, according to the present invention,
In a BGA package, a structure is adopted in which a high melting point solder ball or a conductive metal ball is covered around with a low melting point solder ball, and a predetermined interval for determining the size of the high melting point solder ball or the conductive metal ball is employed. Since the melting point solder balls and the conductive metal balls do not melt during mounting, there is an effect that the distance between the substrate and the package can be maintained by the size thereof.
【００３０】また、本発明によれば、実装時に温度バラ
ツキが発生しても、安定して実装することを可能として
いる。Further, according to the present invention, it is possible to stably mount even if a temperature variation occurs during mounting.
【図１】本発明の第一の実施例の製造方法を説明するた
めに工程順に部分断面を示し工程断面図である。FIG. 1 is a process sectional view showing a partial cross section in the order of processes for explaining a manufacturing method of a first embodiment of the present invention.
【図２】本発明の第二の実施例の製造方法を説明するた
めに工程順に部分断面を示し工程断面図である。FIG. 2 is a process cross-sectional view showing a partial cross-section in the order of processes for explaining a manufacturing method according to a second embodiment of the present invention.
【図３】従来の製造方法を説明するために工程順に部分
断面を示し工程断面図である。FIG. 3 is a process cross-sectional view showing a partial cross-section in the order of processes to explain a conventional manufacturing method.
１ ソルダーレジスト ２ 端子部 ３ パッケージ基板 ４ 高融点ハンダ（液状） ５ 高融点ハンダ（凝固後） ６ 低融点ハンダ（液状） ７ 低融点ハンダ（凝固後） ８ 導電性金属球 ９ 導電性粘替ペースト DESCRIPTION OF SYMBOLS 1 Solder resist 2 Terminal part 3 Package board 4 High-melting-point solder (liquid) 5 High-melting-point solder (solidified) 6 Low-melting-point solder (liquid) 7 Low-melting-point solder (solidified) 8 Conductive metal ball 9 Conductive translucent paste
Claims (4)
極において、 高融点ハンダ球の外周を低融点ハンダで取り囲むように
した構造を有することを特徴とする半田バンプ電極。1. A solder bump electrode of a BGA type semiconductor package, wherein the solder bump electrode has a structure in which a periphery of a high melting point solder ball is surrounded by a low melting point solder.
極において、 導電性金属球の外周を低融点ハンダで取り囲むようにし
た構造を有することを特徴とする半田バンプ電極。2. A solder bump electrode of a BGA type semiconductor package having a structure in which the outer periphery of a conductive metal ball is surrounded by low melting point solder.
ンを保護するためのソルダーレジストの半田ボールを形
成する端子部に設けられた開口部に、液状の高融点半田
を少量滴下し前記高融点半田が凝固して球状の半田ボー
ルを形成し、 （ｂ）その上から液状の低融点半田を滴下して、前記高
融点半田ボールを覆うようにして、低融点の半田ボール
を形成する、 ことを特徴とするＢＧＡパッケージの半田バンプ電極の
製造方法。3. A small amount of liquid high-melting-point solder is dropped into an opening provided in a terminal portion for forming a solder ball of a solder resist for protecting a wiring pattern on a back surface of a package substrate. (B) forming a low-melting-point solder ball by covering the high-melting-point solder ball by dropping a liquid low-melting-point solder from above; A method for manufacturing a solder bump electrode of a BGA package, characterized by comprising:
ンを保護するためのソルダーレジストの半田ボールを形
成する端子部に設けられた開口部において、前記端子部
に導電性接着剤で導電性金属球を接着し、 （ｂ）その上に液状の低融点半田を滴下して、前記導電
性金属球を覆うようにして、低融点の半田ボールを形成
する、 ことを特徴とするＢＧＡパッケージの半田バンプ電極の
製造方法。4. An opening provided in a terminal portion for forming a solder ball of a solder resist for protecting a wiring pattern on a back surface of a package substrate, said terminal portion being made of a conductive metal with a conductive adhesive. (B) forming a low melting point solder ball by covering the conductive metal ball by dropping a liquid low melting point solder thereon; Manufacturing method of bump electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9220972A JP2985840B2 (en) | 1997-07-31 | 1997-07-31 | Manufacturing method of solder bump electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9220972A JP2985840B2 (en) | 1997-07-31 | 1997-07-31 | Manufacturing method of solder bump electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1154656A true JPH1154656A (en) | 1999-02-26 |
| JP2985840B2 JP2985840B2 (en) | 1999-12-06 |
Family
ID=16759459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9220972A Expired - Fee Related JP2985840B2 (en) | 1997-07-31 | 1997-07-31 | Manufacturing method of solder bump electrode |
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| Country | Link |
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| JP (1) | JP2985840B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001020676A1 (en) * | 1999-09-14 | 2001-03-22 | Alpha Metals, Inc. | Flip chip having integral mask and underfill providing two-stage bump formation |
| KR100376929B1 (en) * | 2000-06-12 | 2003-03-26 | 에드호텍(주) | Method and apparatus for directly attaching engineering balls to a chip or printed circuit board with high efficiency |
| JP2007027576A (en) * | 2005-07-20 | 2007-02-01 | Rohm Co Ltd | Semiconductor device |
| CN1317751C (en) * | 2005-01-12 | 2007-05-23 | 哈尔滨工业大学 | Production of direct brazing filler metal button by double electrothermal filament smelting and cutting method |
| JP2015514316A (en) * | 2012-03-20 | 2015-05-18 | アルファ・メタルズ・インコーポレイテッドＡｌｐｈａ Ｍｅｔａｌｓ，Ｉｎｃ． | Solder preform and solder alloy assembly method |
| JP2017055113A (en) * | 2015-09-08 | 2017-03-16 | エルジー エレクトロニクス インコーポレイティド | Solar cell module and manufacturing method therefor |
| US9831187B2 (en) | 2012-11-30 | 2017-11-28 | Apic Yamada Corporation | Apparatus and method for electrostatic spraying or electrostatic coating of a thin film |
-
1997
- 1997-07-31 JP JP9220972A patent/JP2985840B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001020676A1 (en) * | 1999-09-14 | 2001-03-22 | Alpha Metals, Inc. | Flip chip having integral mask and underfill providing two-stage bump formation |
| KR100376929B1 (en) * | 2000-06-12 | 2003-03-26 | 에드호텍(주) | Method and apparatus for directly attaching engineering balls to a chip or printed circuit board with high efficiency |
| CN1317751C (en) * | 2005-01-12 | 2007-05-23 | 哈尔滨工业大学 | Production of direct brazing filler metal button by double electrothermal filament smelting and cutting method |
| JP2007027576A (en) * | 2005-07-20 | 2007-02-01 | Rohm Co Ltd | Semiconductor device |
| JP2015514316A (en) * | 2012-03-20 | 2015-05-18 | アルファ・メタルズ・インコーポレイテッドＡｌｐｈａ Ｍｅｔａｌｓ，Ｉｎｃ． | Solder preform and solder alloy assembly method |
| US9831187B2 (en) | 2012-11-30 | 2017-11-28 | Apic Yamada Corporation | Apparatus and method for electrostatic spraying or electrostatic coating of a thin film |
| JP2017055113A (en) * | 2015-09-08 | 2017-03-16 | エルジー エレクトロニクス インコーポレイティド | Solar cell module and manufacturing method therefor |
| US11417787B2 (en) | 2015-09-08 | 2022-08-16 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| JP2985840B2 (en) | 1999-12-06 |
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