JPH11214556A - High frequency input and output terminal, and package for high frequency semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent reflection of a high frequency signal in a line conductor or the deterioration of high frequency characteristics due to electric interference between line conductors, even when there is no space for providing the same face ground conductor layer or the like due to a narrow interval between the line conductors. SOLUTION: In a high frequency input and output terminal, plural line conductors 14 are formed almost in parallel on the upper face of a dielectric substrate 12 on whose lower face a ground conductor layer 13 is formed, and a band-shaped dielectric wall member 15 holding one part of each line conductor 14 in a direction almost orthogonally crossing each line conductor 14 is joined, and a groove 16 whose width is 0.2 mm or more and whose depth is 1/2 of the thickness of the dielectric substrate 12 or more is provided on the dielectric substrate 12 between the line conductors 14 on at least one side of the dielectric wall member 15. Thus, an air groove is interposed in the part of the groove 16 so that, capacitance between the line conductors 14 can be decreased, and any electric interference having an adverse influence on high frequency characteristics can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency input / output terminal used for a high frequency input / output section of a package for accommodating a high frequency semiconductor element such as a microwave band or a millimeter wave band, and a high frequency input / output terminal. And a package for storing a high-frequency semiconductor element.

[0002]

2. Description of the Related Art A high-frequency signal input / output terminal of a high-frequency semiconductor element housing package for hermetically sealing and housing a high-frequency semiconductor element using a high-frequency signal such as a microwave band or a millimeter wave band has a high frequency. As a line conductor of a transmission line, a structure in which a microstrip line formed on a dielectric substrate and a strip line of a hermetic seal portion are generally used, and a plurality of line conductors are arranged almost in parallel as necessary. Has been established.

[0003] Such an input / output terminal portion is used as a signal input / output portion of a package for housing a high-frequency semiconductor element, and is also produced as a high-frequency input / output terminal and incorporated in a package. Have been.

As a conventional high frequency input / output terminal as described above, for example, there is one having a configuration as shown in FIG.
FIG. 4A is a perspective view showing an example of a conventional high frequency input / output terminal, FIG. 4B is a plan view showing a part of the terminal, and FIG. 4C is a line AA ′ in FIG. It is sectional drawing. In the high frequency input / output terminal 1 shown in FIG. 4, a plurality of line conductors 4 are formed on the upper surface of a dielectric substrate 2 made of alumina ceramic or the like having a ground conductor layer 3 formed on the lower surface thereof by a metallized metal layer made of tungsten or molybdenum. The dielectric wall members 5 are formed substantially parallel to each other in the transmission direction of the high-frequency signal, and the dielectric wall members 5 constituting the hermetic seal portion are arranged in a direction substantially orthogonal to each line conductor 4 so as to sandwich a part of each line conductor 4. Are joined. Note that an upper surface ground conductor layer (not shown) is formed on the upper surface of the dielectric wall member 5 as necessary.

[0005] Then, a metal base constituting the package for housing the high-frequency semiconductor element and a metal frame forming the container wall are cut out to form a mounting portion for the high-frequency input / output terminal.
By attaching and using this type of high frequency input / output terminal 1 to this mounting portion, a so-called metal wall type high frequency semiconductor element housing package is obtained.

Further, a dielectric substrate constituting a package for accommodating a high frequency semiconductor element and a dielectric frame forming a container wall are cut out to form a mounting portion for a high frequency input / output terminal. A ground conductor layer is formed on the lower surface, and a package having an input / output terminal portion having a configuration similar to that of the high frequency input / output terminal 1 is formed on the lower surface of the package. A dielectric substrate having a mounting portion for mounting a high-frequency semiconductor element thereon, and a plurality of line conductors formed on the upper surface of the dielectric substrate from near the mounting portion to near the outer periphery of the dielectric substrate,
A dielectric frame that surrounds the mounting portion on the dielectric substrate and is joined with a part of the line conductor sandwiched between the dielectric substrate and the dielectric substrate and the dielectric wall member. Some have the same configuration as the input / output terminal 1. In these cases, a so-called ceramic wall type package for housing a high-frequency semiconductor element is obtained.

Further, there is a package having a structure in which a high frequency input / output terminal 1 is similarly fitted using a dielectric substrate and a metal frame.

In these conventional high frequency input / output terminals 1 or input / output terminals, impedance matching is generally achieved by adjusting the width of the line conductor 4 and the thickness of the dielectric substrate 2 in order to propagate a high frequency signal. Design.
This suppresses reflection of high-frequency signals at the hermetic seal portion, that is, the joint portion between the dielectric substrate 2 and the dielectric wall member 5, and obtains good high-frequency characteristics.

In the high-frequency input / output terminal 1 and the high-frequency semiconductor element housing package having the above-described structure, it is necessary to consider not only the reflection characteristics of the high-frequency signal but also the crosstalk and the isolation in terms of the electrical characteristics. As a characteristic referred to as a decrease in high-frequency characteristics due to electrical interference of a high-frequency signal between the line conductors 4, the following countermeasures are generally taken to prevent such signal interference.

1) Spacing between the line conductors 4 (arrangement pitch)
As wide as possible. 2) As shown in FIG. 5 (a) in a plan view similar to FIG. 4 (b), the same-plane ground conductor layer 6 is provided between the line conductors 4. 3) In the structure of 2), in order to improve the grounding property of the coplanar ground conductor layer 6, FIGS. 5A and 5B (FIG.
As shown in (A) AA ′ sectional view), the dielectric substrate 2
Through conductors 7 such as via holes filled with conductive metal inside
Or a side metallized conductor layer (not shown) is provided on the side surface of the dielectric substrate 2 to electrically connect the ground conductor layer 6 with the ground conductor layer 3.

A signal or power supply lead terminal may be attached to each line conductor 4 or the same plane ground conductor layer 6 for connection to an external electric circuit or a high-frequency semiconductor element. The lead terminals (not shown) are connected to the respective line conductors 4 or the same-surface ground conductor layer 6 with, for example, an Ag-Cu brazing material.

[0012]

However, in the high frequency input / output terminal and the input / output terminal portion of the high frequency semiconductor element housing package having the above-described structure, the arrangement of the electrode pads of the high frequency semiconductor element is increased. As a result, or in order to cope with various electrode pad arrangements, the arrangement pitch between the line conductors 4 may be narrowed. In this case, there are the following problems.

A) Ground conductor layer 6 on the same plane between each line conductor 4
When the line conductor 4 is forcibly provided, the line conductor 4 and the ground conductor layer 6 on the same plane may be short-circuited. b) Even if the ground conductor layer 6 on the same plane can be provided, there is no room for providing the through conductor 7 and the like, and when the through conductor 7 and the like are forcibly provided, the through conductor 7 and the like and the line conductor 4 may be short-circuited. There is. c) Even if the same-surface ground conductor layer 6 and the through conductor 7 can be provided, a gap between these and the line conductor 4 cannot be sufficiently obtained, and impedance mismatch such as lower impedance occurs. As a result, reflection of a high-frequency signal occurs, and high-frequency characteristics are degraded. In the structures d) and c), it is necessary to reduce the width of the line conductor 4 in order to match the impedance. However, if the width is reduced, the joint strength of the lead terminal is required in the case of attaching the lead terminal to the line conductor 4. Will be reduced.

The present invention has been devised in view of the above circumstances, and has as its object to reduce the distance between line conductors even when the distance between the line conductors becomes narrow and there is no room for providing a ground conductor layer on the same plane. The reduction of high frequency characteristics due to electrical interference can be reduced,
In addition, it is an object of the present invention to provide a high frequency input / output terminal and a high frequency semiconductor element housing package having good high frequency characteristics without producing defects in mounting lead terminals and the like.

[0015]

According to the high frequency input / output terminal of the present invention, a plurality of line conductors are formed substantially in parallel with each other on an upper surface of a dielectric substrate having a ground conductor layer formed on a lower surface thereof. A band-shaped dielectric wall member sandwiching a part of each line conductor in a direction substantially orthogonal to the above is joined, and on at least one side of the dielectric wall member, the dielectric substrate between the line conductors is formed. A groove having a width of at least 0.2 mm and a depth of at least half the thickness of the dielectric substrate is provided.

The high frequency input / output terminal according to the present invention is characterized in that, in the above structure, the groove penetrates the dielectric substrate.

In the first package for storing a high-frequency semiconductor element according to the present invention, a frame is joined to a substrate having a mounting portion for mounting the high-frequency semiconductor element on an upper surface so as to surround the mounting portion. An input / output terminal mounting portion is formed by cutting out the frame body and the bottom surface thereof is made conductive, and the high-frequency input / output terminals of the above-described respective configurations are fitted to the input / output terminal mounting portion. Is what you do.

A second package for accommodating a high-frequency semiconductor device according to the present invention comprises a mounting portion for mounting the high-frequency semiconductor device on an upper surface of a dielectric substrate having a ground conductor layer formed on a lower surface, and the mounting portion. A plurality of line conductors disposed substantially parallel to each other from the vicinity to the vicinity of the outer periphery of the dielectric substrate are formed, and the dielectric which surrounds the mounting portion on the dielectric substrate and partially sandwiches each of the line conductors is formed. It consists of joining the body frame, at least one side of this dielectric frame,
A width of 0.2 mm or more on the dielectric substrate between the line conductors,
A groove having a depth of at least half the thickness of the dielectric substrate is provided.

Furthermore, a second package for housing a high-frequency semiconductor element according to the present invention is characterized in that, in the above-described configuration, the groove penetrates the dielectric substrate.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a view similar to FIG. 4 showing an example of an embodiment of a high-frequency input / output terminal of the present invention. FIG. 1 (a) is a perspective view, FIG. FIG. 3C is a sectional view taken along line AA ′ of FIG. In FIG. 1, 11 is a high frequency input / output terminal, 12 is a dielectric substrate, and 15 is a dielectric substrate.
These are band-shaped dielectric wall members joined to the upper surface of 12, and are also used as a hermetic seal portion (hermetic sealing portion) in a signal input / output portion of a high-frequency semiconductor element housing package. A ground conductor layer 13 is provided on the lower surface of the dielectric substrate 12.
However, on the upper surface, a plurality of line conductors 14 are formed substantially parallel to each other in the transmission direction of the high-frequency signal, and the dielectric wall member 15 is arranged in a direction substantially orthogonal to the line conductors 14.
Are joined so as to sandwich a part of them.

In this example, as shown in FIG. 1B, the dielectric substrate 12 and the dielectric wall member are arranged such that the line width of the line conductor 14 is exposed on the upper surface of the dielectric substrate 12. The gap between the hermetic seal portion and the line conductor 14 before and after the hermetic seal portion is matched.

On at least one side of the dielectric wall member 15, that is, at least one side of the dielectric wall member 15, the dielectric substrate 12 between the line conductors 14 has a width of 0.2 mm or more and a depth of Grooves 16 having a thickness equal to or more than half of the thickness of the body substrate 12 are provided. With these grooves 16, grooves of an air layer are interposed between the line conductors 14. In this example, the grooves 16 are provided on both sides of the dielectric wall member 15, but these grooves 16 are provided on at least one side, preferably at least on the side located outside the package according to the specification of the high frequency input / output terminal 11. To be provided. The width of the groove 16 is set to be 0.2 mm or more and smaller than the interval between the line conductors 14.

In the input / output portion of the high-frequency input / output terminal 11 and the high-frequency semiconductor element housing package having the same configuration, generally, electrical interference in the high-frequency characteristics between the plurality of line conductors 14 This is largely caused by the dielectric constant interposed between the conductors 14, here, the dielectric constant of the dielectric substrate 12, and the higher the dielectric constant, the greater the capacitance value between the line conductors 14 and the greater the electrical interference.

According to the high frequency input / output terminal 11 of the present invention,
Since the groove 16 is provided in the dielectric substrate 12 between the line conductors 14, an air groove is interposed in this portion, and the dielectric substrate 12
The relative permittivity of 8.8 to 8.
On the other hand, since the relative dielectric constant of air interposed as the groove 16 is 1.0, the capacitance value between the line conductors 14 is low, and electrical interference that adversely affects high-frequency characteristics is reduced.

Since the groove 16, that is, a layer of air having a small relative dielectric constant, is present near the line conductor 14, the effective dielectric constant around the line conductor 14 is reduced. Therefore, when impedance matching is performed by changing the width of the line conductor 14, the width of the line conductor 14 can be made wider than that of a conventional high frequency input / output terminal. In this case, the bonding area of the lead terminals can be increased, and sufficient bonding strength can be secured.

In the high frequency input / output terminal 11 having such a configuration, if the width of the groove 16 is less than 0.2 mm, the function and effect of the groove 16 cannot be obtained, and the electrical coupling between the line conductors 14 increases, and When the dielectric substrate 12 is manufactured, it is difficult to directly form the groove 16 in the dielectric substrate 12, or a sheet-like dielectric layer serving as a lower layer becomes difficult. A dielectric layer 12b as an upper layer in which a notch serving as a groove 16 is formed on 12a.
When the sheet laminating method of laminating the
It becomes difficult to obtain a desired groove 16 after processing the notch in b and firing, which makes production difficult. Therefore, the width of the groove 16 in the high frequency input / output terminal 11 of the present invention needs to be 0.2 mm or more.

If the depth of the groove 16 becomes shallow, less than half the thickness of the dielectric substrate 12, the effect of the groove 16 cannot be obtained sufficiently, and the electrical coupling between the line conductors 14 cannot be obtained. And electrical interference tends to increase. Accordingly, it is necessary that the depth of the groove 16 in the high frequency input / output terminal 11 of the present invention is not less than half the thickness of the dielectric substrate 12. In addition, as described later, the groove
16 is the same depth as the thickness of the dielectric substrate 12, that is, the dielectric substrate
12 may be formed as a notch formed between the line conductors 14 of the dielectric substrate 12.

FIGS. 2A to 2C show other examples of the high-frequency input / output terminal according to the present invention, respectively.
(A) to (c) are the same perspective view, plan view and AA ′
Shown in cross section. In FIG. 2, 21 is a high frequency input / output terminal, 22 is a dielectric substrate, and 25 is a strip-shaped dielectric wall member joined to the upper surface of the dielectric substrate 22. A ground conductor layer 23 is formed on the lower surface of the dielectric substrate 22, and a plurality of line conductors 24 are formed on the upper surface almost in parallel to the transmission direction of the high-frequency signal. The line conductors 24 are joined so as to sandwich a part of each line conductor 24 in a direction orthogonal to the line conductors.

On at least one side of the dielectric wall member 25, that is, at least one side of the dielectric wall member 25, the width of the dielectric substrate 22 between the line conductors 24 is 0.2 mm or more and the depth is A groove 26 that is at least half the thickness of the body substrate 22 is provided. In this example, the groove 26 penetrates through the dielectric substrate 22 to form a notch. When the groove 26 is formed as a cutout penetrating the dielectric substrate 22 as described above, the dielectric substrate 22 between the line conductors 24 is completely separated by the air layer, and the effect of the groove 26 is obtained. Is more suitably performed.

In this embodiment, the grooves 26 are also provided on both sides of the dielectric wall member 25, but these grooves 26 are also provided on at least one side, preferably at least on the outside of the package according to the specifications of the high frequency input / output terminal 21. It may be provided on the side where it is located.

In the input / output terminal for high frequency of the present invention, a ground conductor layer or the like on the same plane is provided between the line conductors as in the input / output terminal for high frequency of the prior art. May be provided with a through conductor or a side metallized conductor layer. An example is shown in FIG.

FIGS. 3A and 3B show another embodiment of the high frequency input / output terminal according to the present invention. FIG. 3B is a plan view similar to FIG. 2B and FIG. It is B 'sectional drawing. In FIG. 3, 31 is a high frequency input / output terminal, 32 is a dielectric substrate, 33 is a ground conductor layer, 34 is a line conductor, 35 is a dielectric wall member, and 36 is provided on a dielectric substrate 32 between the line conductors 34. It is a groove. Here, an example is shown in which the groove 36 penetrates the dielectric substrate 32.

Reference numeral 37 denotes a coplanar ground conductor layer disposed between the line conductors 34 on the upper surface of the dielectric substrate 32, and 38 denotes a coplanar ground conductor formed through the dielectric substrate 32. Tier 37
And a through conductor such as a via hole for electrically connecting the ground conductor layer 33 to the ground conductor layer 33. Further, reference numeral 39 denotes an upper surface ground conductor layer formed on the upper surface of the dielectric wall member 35, and is electrically connected to the same plane ground conductor layer 37 and the ground conductor layer 33 by the through conductor 38. In the high frequency input / output terminal 31 of the present invention, at least one side of the dielectric wall member 35, that is, the dielectric wall member
Since the groove 36 is formed in the dielectric substrate 32 between the line conductors 34 on at least one side with respect to the boundary 35, the same plane ground conductor layer 37 is not formed in the portion where the groove 36 is formed, Instead, an air layer will be present.

As described above, when the side surface ground conductor layer and the like are provided on the side surfaces of the same surface ground conductor layer 37, the upper surface ground conductor layer 39, the through conductor 38, and the dielectric substrate 32 and the dielectric wall member 35, By surrounding the line conductor 34 in the hermetic seal portion with the ground conductor layer, it can be used as a shield for high-frequency signals, and stable high-frequency characteristics can be obtained.

The side-surface ground conductor layer and the top-surface ground conductor layer may be formed of other conductive members instead of, for example, when the high frequency input / output terminal is incorporated in a package.

In the high frequency input / output terminal of the present invention, the dielectric substrate and the dielectric wall member are made of a ceramic material such as alumina or mullite, a glass ceramic, or a resin such as Teflon (PTFE), glass epoxy or polyimide. A system material or the like is used. The thickness, width and length of these dielectrics are appropriately set according to the frequency and characteristic impedance of the transmitted high-frequency signal.

The same material may be usually used for the dielectric wall member and the dielectric substrate. However, different materials are used to make the dielectric constant of the dielectric wall member different from that of the dielectric substrate. Is also good. In this case, for example, it is preferable that the dielectric constant of the dielectric wall member is lower than that of the dielectric substrate, and it is preferable that the dielectric constant of the dielectric wall member be as close as possible to a vacuum dielectric constant. Accordingly, the change in the propagation mode at the joint between the dielectric substrate and the dielectric wall member and the other portion is small, which is preferable in that the transmission loss is reduced.

The line conductor is a metal material for a high-frequency line conductor,
For example, Cu, MoMn + Ni + Au, W + Ni + Au,
Cr + Cu, Cr + Cu + Ni + Au, Ta ₂ N + Ni
Cr + Au, Ti + Pd + Au, NiCr + Pd + Au
It is formed by a thick film printing method, various thin film forming methods, a plating method, or the like, and its thickness and width are appropriately set according to the frequency and characteristic impedance of the transmitted high-frequency signal.

In the case where the line width of the line conductor is made smaller than the line width of the other portion at the joint between the dielectric wall member and the dielectric substrate as in the examples of FIGS. It is set as appropriate according to the required specifications from the width corresponding to the ideal characteristic impedance to the line width in the other portions.

When the same plane ground conductor layer 37 is provided, the same plane ground conductor layer 37 may be formed of the same material as the line conductor by the same method.
A standard setting for providing a common ground conductor layer on the same plane may be used. Further, the dielectric wall member 35 and the dielectric substrate 32
The characteristic impedance may be more precisely matched by, for example, projecting the same-surface ground conductor layer 37 toward the line conductor 34 at equal intervals at the junction with the conductor, and in such a case, the electromagnetic field influence degree May be set appropriately according to the required characteristics.

The ground conductor layer 3 and the upper surface ground conductor layer 39 and the side surface ground conductor layer which are formed as necessary may be formed by using the same material as the line conductor and by the same method. As described above, these may be formed by attaching another conductive member, for example, a metal plate or a metal block, in addition to being formed as a metal coating layer.

Next, a first package for housing a high-frequency semiconductor element of the present invention will be described. In the first package for housing a high-frequency semiconductor element of the present invention, a mounting portion for mounting the high-frequency semiconductor element is formed on the upper surface of a substrate made of a dielectric or metal. This mounting portion is formed on the substrate as a flat surface or in a concave shape. A frame made of a dielectric material or a metal is joined to the substrate so as to surround the mounting portion, similarly to the substrate.

The frame is formed with an input / output terminal mounting portion in which the side and bottom surfaces of the frame are cut out and the side and bottom surfaces thereof are made conductive.
Note that a similar notch may be provided on the substrate to form the input / output terminal attachment portion. The side and bottom surfaces of the input / output terminal mounting part are conductive when the substrate and frame are made of metal, but are conductive by forming a conductive layer when the substrate and frame are made of dielectric. And
Both the side and the bottom are grounded via the substrate and the frame or the ground conductor layer adhered to them.

The first high-frequency semiconductor element housing package of the present invention is characterized in that the above-mentioned high-frequency input / output terminal according to the present invention is joined to the input / output terminal mounting portion together with the frame. is there.

According to the first high-frequency semiconductor element housing package of the present invention, the high-frequency input / output terminal according to the present invention is used as the structure of the high-frequency input / output terminal. As a so-called metal wall type package for housing a high-frequency semiconductor element, an electrical connection between line conductors at a high-frequency input / output terminal in transmission of a high-frequency signal between the high-frequency semiconductor element housed inside the package and an external electric circuit. The high-frequency characteristics do not deteriorate due to the interference, the high-frequency signals are not reflected, and the high-frequency signals have good transmission characteristics, and the high-frequency semiconductor element housed therein can be prevented from malfunctioning. .

Further, the width of the line conductor to which the lead terminal is attached in the high frequency input / output terminal can be increased, and a high frequency semiconductor element housing package having high reliability of joining of the lead terminal can be obtained.

Then, the line conductor is connected to the terminal electrode of the high-frequency semiconductor element mounted on the mounting portion and the wiring conductor of the external electric circuit via a bonding wire, a ribbon lead terminal, or the like, and the high-frequency semiconductor in the package is connected. The element is electrically connected to an external electric circuit, and Fe
-A lid made of an Fe-Ni alloy such as Ni-Co or Fe-Ni42 alloy, oxygen-free copper, aluminum, stainless steel, Cu-W alloy, Cu-Mo alloy, etc. is soldered, AuSn
The high-frequency semiconductor element is hermetically sealed and housed inside the package by attaching it with a low-melting metal brazing material such as a braze, a high-melting metal brazing material such as an AuGe braze, or by seam welding. As a high-frequency semiconductor device.

The substrate and frame in the first high-frequency semiconductor element housing package of the present invention may be the same dielectric as the high-frequency input / output terminal dielectric or the above-described lid according to the specifications of the package. When the same metal as the body is used, and when the body is made of a dielectric, at least the side and bottom surfaces of the input / output terminal mounting portion are made conductive.

The substrate and the frame are made of Ag-Cu solder.
It is joined by a high melting point metal brazing material such as u-Sn brazing or Au-Ge brazing. The high frequency input / output terminal is fitted to the input / output terminal mounting portion, and is joined to the frame and the substrate by the same high melting point metal brazing material or the like.

The upper surface of the dielectric wall member of the high frequency input / output terminal to be fitted to the input / output terminal mounting portion is formed so that the input / output terminal mounting portion is cut out to reach the upper surface of the frame and is flush with the upper surface of the frame. In this case, the high-frequency semiconductor element mounted on the mounting portion can be easily inserted into the inside by attaching the lid directly or via a frame-shaped metal seal or the like to these upper surfaces. Can be housed in a hermetically sealed manner. Also,
At this time, if the upper surface of the dielectric wall member and the upper surface of the frame are not flush with each other, the high-frequency semiconductor element is similarly internally sealed by a lid shaped to fill the step or through a metal seal. Can be housed in a hermetically sealed manner.

Further, a plurality of high frequency input / output terminals may be provided in parallel by providing a plurality of input / output terminal mounting portions as necessary.

When the upper surface ground conductor layer or the side surface ground conductor layer is added to the high frequency input / output terminal, in addition to the case where the upper conductor layer is formed as a metal film layer, a large number of through conductors are arranged or connected. As a result, a substantially continuous ground conductor layer may function in the same manner as the coating layer, or may be formed by attaching a metal plate or a metal block.

Next, a second package for accommodating a high frequency semiconductor device according to the present invention will be described. In the second package for storing a high-frequency semiconductor element of the present invention, the substrate is a dielectric substrate, which is made of the same material as the dielectric substrate or the dielectric wall member of the above-described high-frequency input / output terminal, and has a lower surface. Has a mounting portion formed on a flat surface or in a concave shape for mounting a high-frequency semiconductor element on an upper surface thereof. In addition, a plurality of line conductors are formed on the upper surface of the dielectric substrate from the vicinity of the mounting portion to the vicinity of the outer periphery of the dielectric substrate so as to be formed substantially in parallel with each other, and further surround the mounting portion on the dielectric substrate. Also, a dielectric frame sandwiching a part of each of the line conductors is joined.

In the second package for housing a high-frequency semiconductor element according to the present invention, at least one side of the dielectric frame, that is, one side of the dielectric frame as a boundary,
A width of 0.2 mm or more on a dielectric substrate between a plurality of line conductors,
A groove having a depth of at least half the thickness of the dielectric substrate is provided.

This groove may be provided only on the outside or inside of the dielectric frame, or may be provided simultaneously on the outside and inside. In particular, when provided on the outside, the width of the line conductor can be made larger than before while the impedance of the line conductor is matched, and the attachment strength of the lead terminal can be sufficiently secured, which is more preferable.

Further, this groove may be formed as a notch through the dielectric substrate. However, it is not preferable to let the dielectric substrate penetrate the groove on the inner side of the dielectric frame because the package is hermetically sealed. However, even when the inner groove is provided through the dielectric substrate, another dielectric substrate, a metal base, a heat radiating member, or the like is attached to the lower surface of the dielectric substrate so as to cover the through groove. By doing so, airtightness can be ensured.

According to the second high-frequency semiconductor element storage package of the present invention having such a configuration, the high-frequency signal input / output terminal portion having the same configuration as the above-described high-frequency input / output terminal of the present invention is provided. Therefore, as a so-called ceramic wall type package for housing a high-frequency semiconductor element, a high-frequency signal is transmitted between the high-frequency semiconductor element housed inside the package and an external electric circuit. The high-frequency characteristics are not degraded due to the electrical interference of the high-frequency signal, the high-frequency signal is not reflected, and the high-frequency signal has good transmission characteristics, and the high-frequency semiconductor element housed therein may malfunction. Can be prevented.

Further, in the input / output terminal portion located outside the dielectric frame, the width of the line conductor to which the lead terminal is attached can be increased as described above, and the reliability of joining of the lead terminal is high. This is a package for storing a high-frequency semiconductor element.

According to the second package for housing a high-frequency semiconductor element of the present invention, the bonding wire is connected to the terminal electrode of the high-frequency semiconductor element mounted on the mounting portion and the wiring conductor of the external electric circuit. And ribbons
The semiconductor device for high frequency inside the package is electrically connected to an external electric circuit by connecting via a lead terminal or the like, and a lid made of the above-mentioned material is attached on the upper surface of the dielectric frame by the above-mentioned attaching method. By being attached, the high-frequency semiconductor element is hermetically sealed and accommodated in the package, and becomes a high-frequency semiconductor device as a product.

As the dielectric substrate and the dielectric frame, a dielectric similar to the above-described dielectric of the high frequency input / output terminal according to the present invention may be used according to the specifications of the package. It is desirable to form a ground conductor layer on almost the entire lower surface of the dielectric substrate, since the ground conductor layer can be set in an ideal ground state.

In addition to joining the dielectric substrate and the dielectric frame separately manufactured, for example, after firing, the dielectric substrate and the ceramic green sheet to be the dielectric frame are laminated and fired. And may be joined by being integrated. For the line conductor and the ground conductor layer, or the same-surface ground conductor layer, the upper-surface ground conductor layer, the side-surface ground conductor layer, and the through conductor formed as necessary, for example, apply a conductor paste to a dielectric substrate and a dielectric frame, respectively. It is formed by printing or embedding it in a predetermined pattern and baking and integrating it with a dielectric substrate / dielectric frame.

The portion corresponding to the above-mentioned dielectric wall member in the high frequency input / output terminal portion of the dielectric frame is integrated with the dielectric frame, and the upper surface thereof is flush with the upper surface of the dielectric frame. In this case, the high-frequency semiconductor element mounted on the mounting portion can be easily hermetically sealed and accommodated therein by attaching the lid to the upper surface directly or via a frame-shaped metal seal or the like. . This portion may have a step as described above.

Furthermore, by making the dielectric constant of the portion corresponding to the dielectric wall member different from that of the other portions of the dielectric frame, for example, by making it low, the propagation mode of the high frequency signal before and after the hermetic seal portion is reduced. As a closer example, it is possible to effectively reduce reflection loss and insertion loss.

It is needless to say that a plurality of high frequency input / output terminals may be provided as necessary.

Further, in the second package for accommodating a high-frequency semiconductor element according to the present invention, the dielectric frame corresponding to the dielectric wall member of the high-frequency input / output terminal portion also includes the upper surface connection conductor layer and the side surface connection conductor layer. When a conductor layer corresponding to the above is provided, a shield for a high-frequency signal that surrounds the line conductor with a ground conductor layer can be formed.

When a ground conductor layer is formed or when a top ground conductor layer or a side ground conductor layer is added, a large number of through conductors may be arranged in addition to the case where the through conductors are formed as described above. Alternatively, they may be connected to each other to function as a substantially continuous ground conductor layer in the same manner as the coating layer, or may be formed by attaching a metal plate or a metal block.

It should be noted that the present invention is not limited to the above example, and that changes and improvements can be made without departing from the scope of the present invention. For example, a plurality of line conductors are arranged substantially parallel to each other, but when the entire high-frequency input / output terminal or the entire high-frequency semiconductor element housing package is viewed, the plurality of line conductors are arranged radially as a whole. Even if it is performed, the line conductors adjacent to each other do not deviate from the scope of the present invention as long as they have a relationship that can be said to be substantially parallel.

[0068]

According to the high frequency input / output terminal of the present invention,
Since a groove having a width of 0.2 mm or more and a depth of one half or more of the thickness of the dielectric substrate is provided in the dielectric substrate between the plurality of line conductors on at least one side of the dielectric wall member, air is formed in this portion. The presence of the groove reduces the capacitance value between the line conductors, and reduces the electric interference that adversely affects the high-frequency characteristics. In addition, since an air layer having a small relative dielectric constant exists due to the groove near the line conductor, the effective dielectric constant around the line conductor becomes low, thereby changing the width of the line conductor to perform impedance matching and to perform high frequency operation. When signal reflection is reduced, the width of the line conductor can be made wider than that of conventional high-frequency input / output terminals. And sufficient bonding strength can be ensured.

The groove penetrates the dielectric substrate,
If a notch is provided in the dielectric substrate between the line conductors,
The dielectric substrate between the respective line conductors is completely separated by the air layer, and the above-described operation and effect by the groove can be more suitably achieved.

According to the first high-frequency semiconductor element housing package of the present invention, the high-frequency input / output terminal of the present invention is used as the structure of the input / output terminal portion. The electrical interference that adversely affects the characteristics is reduced, the reflection of high-frequency signals does not occur, the width of the line conductor can be widened, and when the lead terminal is attached to the line conductor, the joint area of the lead terminal is reduced. It can be widened and sufficient bonding strength can be secured.

According to the second high-frequency semiconductor element housing package of the present invention, the high-frequency input / output terminals are at least on one side of the dielectric frame, similar to the above-described high-frequency input / output terminals of the present invention. Since the input / output terminal portion having the groove is formed, like the above-described high-frequency input / output terminal of the present invention and the first high-frequency semiconductor element housing package, electrical interference that adversely affects high-frequency characteristics is reduced. Reduced, no reflection of high-frequency signals occurs, the width of the line conductor can be widened, and in the case of the specification where the lead terminal is attached to the line conductor, the bonding area of the lead terminal can be widened and sufficient bonding Strength can be ensured.

As described above, according to the present invention, even when the distance between the line conductors becomes narrow and there is no room for providing a ground conductor layer on the same plane, reflection of high-frequency signals on the line conductors and electrical interference between the line conductors can be achieved. Thus, it is possible to provide a high-frequency input / output terminal and a high-frequency semiconductor element housing package with good high-frequency characteristics, which can reduce a decrease in high-frequency characteristics due to the above-mentioned method, and have no problem in manufacturing such as mounting of lead terminals.

[Brief description of the drawings]

FIGS. 1A to 1C are perspective views each showing an example of an embodiment of a high-frequency input / output terminal according to the present invention, a plan view showing a part of the perspective view, and an AA ′ cross section of FIG. FIG.

FIGS. 2 (a) to 2 (c) are perspective views showing another embodiment of the high frequency input / output terminal of the present invention, a plan view partially showing the example, and AA in FIG. 2 (b). FIG.

3 (a) and 3 (b) are a plan view of a part of another embodiment of the high frequency input / output terminal of the present invention, and FIG. It is.

4A to 4C are perspective views each showing an example of a conventional high-frequency input / output terminal, a plan view partially showing the example,
It is AA 'sectional drawing of (b).

FIGS. 5A and 5B are a plan view partially showing another example of a conventional high frequency input / output terminal and a sectional view taken along line AA ′ of FIG. 5A.

[Explanation of symbols]

 11, 21, 31 ... High frequency input / output terminals 12, 22, 32 ... Dielectric substrate 13, 23, 33 ... .Line conductors 15, 25, 35... Dielectric wall members 16, 26, 36...

Claims (5)

[Claims] A plurality of line conductors are formed substantially parallel to each other on an upper surface of a dielectric substrate having a ground conductor layer formed on a lower surface, and a part of each line conductor is arranged in a direction substantially orthogonal to each of the line conductors. A band-shaped dielectric wall member sandwiching the dielectric wall member is joined, and at least one side of the dielectric wall member, the width of the dielectric substrate between the line conductors is 0.2 mm or more,
A high frequency input / output terminal, wherein a groove having a depth of at least half the thickness of the dielectric substrate is provided. 2. The high frequency input / output terminal according to claim 1, wherein said groove penetrates through said dielectric substrate. 3. A frame having a mounting portion for mounting a high-frequency semiconductor element on an upper surface thereof is joined to a frame so as to surround the mounting portion, and the frame is cut out to make the bottom surface conductive. A high-frequency semiconductor element housing package comprising: a high-frequency input / output terminal according to claim 1 or 2 fitted to said input / output terminal mounting portion. . 4. A mounting portion for mounting a high-frequency semiconductor element on an upper surface of a dielectric substrate having a ground conductor layer formed on a lower surface, and substantially parallel to each other from near the mounting portion to near an outer periphery of the dielectric substrate. And forming a plurality of line conductors, and joining a dielectric frame that surrounds the mounting portion on the dielectric substrate and sandwiches a part of each of the line conductors. A high-frequency semiconductor device, wherein a groove having a width of at least 0.2 mm and a depth of at least one-half the thickness of the dielectric substrate is provided on the dielectric substrate between the line conductors on at least one side. Package for storage. 5. The package for accommodating a high-frequency semiconductor device according to claim 4, wherein said groove penetrates through said dielectric substrate.