JPH10126005A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-performance semiconductor light emitting device with a long wavelength band which can be formed on an InP substrate, and a manufacturing method of the device. SOLUTION: A semiconductor light emitting device 1 has a DH structure where a clad layer 3 as an n-type InP layer, an active layer 4 formed with a mixed crystal semiconductor Gaa In1-a Nb Asc P1-b-c (0<=a<1, 0<b<1, 0<=c<1) layer including at least N, which is lattice-matched to a growth substrate 2 as an InP layer, and which has a wavelength of 1.4μm, a clad layer 5 as a p-type InP layer, and a cap layer 6 as a p<+> type InGaAs layer are sequentially deposited on the growth surface 2. The active layer 4, to which the N is added, has a small grid constant and a long wavelength. Further, as the N has a high electro-negativity, the device has low band cap energy and high band discontinuity of a conductor band. In comparison with a light emitting device using conventional GaInAsP/InP material, the overflow of injection carriers is extremely reduced, and the temperature characteristic is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device used for a semiconductor laser or a light emitting diode and a method for manufacturing a semiconductor light emitting device.

[0002]

2. Description of the Related Art As materials for semiconductor lasers in the 1.3 μm band and the 1.5 μm band, conventionally, InGaAsP / InP is used.
System materials are used. In order to spread the optical subscriber system, cost reduction is demanded. By improving the temperature characteristics of the semiconductor laser, controlling the injection current without using an electronic cooling device or the like. The realization of an APC (auto power control) free system for controlling the power to be constant has been studied. However, since the InGaAsP / InP-based material cannot make the conduction band discontinuity so large in terms of material, carriers easily overflow, and its temperature dependence is large, so that it is difficult to realize the material.

Recently, N-type mixed crystal semiconductor materials containing N in the V group have been studied as a novel semiconductor material. For example, Japanese Patent Application Laid-Open No. 6-334168 discloses that
As a means for producing a group III-V mixed crystal semiconductor device, a technique for epitaxially growing an N-based mixed crystal semiconductor which is a lattice matching material is described. This publication proposes a semiconductor laser and a photodiode using a GaN _0.03 P _0.97 cladding layer lattice-matched to a Si substrate, and a strained superlattice active layer of GaNp and GaNAs.

[0004] Using this technique, III-
It becomes possible to epitaxially grow a group V mixed crystal semiconductor device without generating misfit dislocations,
Monolithic integration with i-electronic devices is also possible.

Further, InGaNAs, AlGaNAs, and Ga can be lattice-matched with GaAs, InP, and GaP substrates.
Examples of mixed crystal semiconductors such as NAs are also described in JP-A-6-037355.

Conventionally, III- which is lattice-matched to a GaAs substrate
Among the group V semiconductors, there was no material having a band gap energy lower than that of GaAs. However, for example, InGaNAs can be lattice-matched to a GaAs substrate, and with a small N composition, a material having a smaller band gap energy than GaAs can be obtained.
It has been found that a light-emitting element having a longer wavelength (such as a 1.5 μm band) than the emission wavelength of GaAs, which has been difficult to form, can be formed on an As substrate.

When In is added to GaAs, the lattice constant increases and the band gap energy decreases, whereas when N is added, the lattice constant decreases and the band gap energy similarly decreases.
That is, when N is added to In _x Ga _{1 -x} As, the band gap energy becomes smaller than that of In _x Ga _{1 -x} As, and there is a condition that the lattice constant matches that of GaAs.

As described above, the InGaNAs layer is made of GaAs.
Since lattice matching is possible with the s substrate, a light emitting element having a longer wavelength than the emission wavelength of about 870 nm (room temperature) corresponding to the band gap energy of GaAs can be used as a conventional Ga
As compared with the case where InGaAs having a lattice constant larger than that of GaAs and having a lattice constant larger than that of GaAs is used for the light emitting layer without forming a lattice match with As, it can be easily formed with high quality. Moreover, the 1.3 μm band,
It is also possible to form a device having a longer wavelength of 1.5 μm.

As for the laminated structure, Abstracts
of the 1995 International Conference on Solid Stat
e Devicies and Materials Proceedings (p1016 ~ p1
018). According to this, InGaNA
A having a large band gap energy with respect to the s active layer
There is a proposal to use lGaAs as a cladding layer. In this proceedings, the InGaNAs active layer and AlGaAs
The clad layer has a direct contact structure. In this material system, since the band discontinuity of the conduction band is large, the injected carriers can be efficiently confined in the InGaNAs active layer, and the bad temperature characteristic which is a disadvantage of the conventional long wavelength laser of the InGaAsP / InP material is remarkably reduced. It was possible to improve, and high output (high power) became possible.

[0010]

However, InG
aNAs / GaAs-based material is NGaAs with respect to InGaAs.
As the In composition is increased and the wavelength is increased, the lattice constant becomes larger than the lattice constant of GaAs, so that InGaN As is not lattice-relaxed on the GaAs substrate.
In order to form, the In composition cannot be so large. That is, it is necessary to add N to InGaAs which is not very long wavelength. If a light emitting element having a lattice matching with the GaAs substrate is to be obtained at 1.3 μm or more, the N composition in the V group is reduced by 4%. Needed to be more than degree. However, an N-based mixed crystal semiconductor material containing N in Group V is difficult to form because it is originally a mixed crystal system having strong immiscibility. For example, N easily separates from the growing substrate surface, and it is difficult to obtain a large N composition. Further, as the N composition is increased, crystallinity such as a decrease in PL (photoluminescence) intensity is deteriorated. As a result, as the wavelength becomes longer, it becomes more difficult to obtain a good crystal, and InGaNAs / Ga
There is a problem that it is difficult to form a high-performance light emitting element such as a 1.5 μm band made of an As-based material having a longer wavelength.

[0011] Accordingly, a first aspect of the present invention, at least includes a N-free mixed crystal semiconductor _{Ga a In 1 -a N b As} c P 1-bc
A semiconductor light emitting device having a stacked structure using (0 ≦ a <1, 0 <b <1, 0 ≦ c <1) layers as light emitting layers,
By forming a laminated structure on an InP substrate and including the heterojunction formed by the light-emitting layer and another layer having a larger band gap energy than the light-emitting layer, a 1.3 μm band, 1.5 μm only slightly adding N against slightly than the value corresponding to the bands large GaInAsP, 1.3 .mu.m band, a light-emitting layer of 1.5μm band, or the like _{Ga a in 1-a N b} as c P 1- _bc (0 ≦ a ≦
1, 0 <b <1, 0 ≦ c <1) layer, which greatly increases the discontinuity of the conduction band as compared with a conventional material system formed on an InP substrate, and improves the injection carrier. The confinement efficiency is improved, and the temperature characteristics are good, easy, and
1.3 μm high-performance band that can be easily manufactured
It is an object of the present invention to provide a semiconductor light emitting device having a long wavelength such as a 1.5 μm band.

According to a second aspect of the present invention, the light emitting layer is formed of Ga _{a
In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,
Formed of 0 ≦ c <1) layer, guide layer, a barrier layer or a cladding layer, than the light emitting layer of the band gap energy larger _{Ga d In 1-d N e} As f P 1-ef (0 ≦ d <1 ,
By forming the layer with 0 ≦ e <1, 0 ≦ f <1), the lattice constant, band gap energy, and the like are controlled to form a light emitting layer and another layer having a band gap energy larger than that of the light emitting layer. It is an object of the present invention to provide a high-performance long-wavelength semiconductor light-emitting device which has a good temperature characteristic and can be easily manufactured by forming a laminated structure including a heterojunction.

According to a third aspect of the present invention, the light emitting layer is made of Ga _{a
In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,
0 ≦ c <1) layer, and the barrier layer and the guide layer
_{a d In 1-d N e} As f P 1-ef (0 ≦ d ≦ 1,0 ≦ e <
Formed by 1,0 ≦ f <1) layer, a cladding layer, a barrier layer and of the guide layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 ≦ x <1,0 ≦ It is an object of the present invention to provide a semiconductor light emitting device having good device performance, in which a threshold current can be reduced and an output can be improved by forming a SCH structure or a quantum well structure by forming a layer with y <1). The purpose is.

According to a fourth aspect of the present invention, the light emitting layer has a lattice strain within a critical strain amount at which misfit dislocation occurs, thereby forming a strained quantum well structure.
It is an object of the present invention to provide a semiconductor light emitting device having good device performance by reducing a threshold current.

According to a fifth aspect of the present invention, the light emitting layer has a compressive lattice strain within a critical strain amount at which a misfit dislocation occurs, and the barrier layer has a tensile lattice within a critical strain amount at which a misfit dislocation occurs. By having the strain, a strain-compensated quantum well element is formed, the strain of the well layer (light-emitting layer) is compensated, and the composition is controlled to have an appropriate amount of strain. It is an object of the present invention to provide a semiconductor light-emitting device having good device performance by increasing the degree of freedom of composition and increasing the number of well layers to reduce the threshold current density.

According to a sixth aspect of the present invention, the light emitting layer has a tensile lattice strain within a critical strain amount at which a misfit dislocation occurs, and the barrier layer has a compression lattice within a critical strain amount at which a misfit dislocation occurs. By having the strain, a strain-compensated quantum well is formed, the strain of the well layer (light emitting layer) is compensated, the appropriate amount of strain is controlled to the composition, and the composition of the well layer is adjusted. It is an object of the present invention to provide a semiconductor light emitting device having good device performance by increasing the degree of freedom or increasing the number of well layers to reduce the threshold current density.

[0017] According to a seventh aspect, including the N Ga _{d
In 1-d N e As f} P 1-ef (0 ≦ d <1,0 ≦ e <1,
A heterojunction is formed in the clad layer, guide layer, or barrier layer composed of 0 ≦ f <1) layers by the presence or absence of the supply of the Ga material or by increasing or decreasing the supply amount of the Ga material, and the Ga composition is changed to Ga _a In _{1−. a N b As c P 1-} bc (0 ≦ a <1,0 <
b <1, 0 ≦ c <1) By forming the light emitting layer larger than the Ga composition of the light emitting layer, the supply amount of the group III raw material which is smaller than the supply amount of the group V raw material can be changed. ,
There is no need to supply or stop the supply of a large amount of N on the substrate to be grown during the growth of the light-emitting layer and the barrier layer. ,
It is an object of the present invention to provide a method for manufacturing a semiconductor light emitting device that can easily and with good reproducibility.

[0018]

According to a first aspect of the present invention, there is provided a semiconductor light emitting device comprising a light emitting layer and a cladding layer, a light emitting layer and a guide layer and a cladding layer, or a light emitting layer, a barrier layer, a guide layer and a cladding layer. in the semiconductor light emitting device comprising a laminated multilayer structure, the emission layer, a mixed crystal semiconductor _{Ga a in 1-a N b} As c P 1-bc (0 ≦ a <1 , which contains at least N,
0 <b <1, 0 ≦ c <1), and the laminated structure is formed on an InP substrate, and is formed by the light emitting layer and another layer having a band gap energy larger than that of the light emitting layer. The above object is attained by including the heterojunction thus formed.

According to the above configuration, at least a mixed crystal including N semiconductor _{Ga a In 1-a N b} As c P 1- bc (0 ≦ a <1,
0 <b <1, 0 ≦ c <1) A semiconductor light emitting device having a stacked structure using a layer as a light emitting layer, wherein the stacked structure is formed on an InP substrate, and the stacked structure is formed as a light emitting layer and the light emitting layer Since it includes a heterojunction formed by another layer having a higher bandgap energy than
Ga which becomes a light emitting layer in a 1.3 μm band, a 1.5 μm band, or the like by adding a small amount of N to GaInAsP slightly larger than the values corresponding to the 3 μm band and the 1.5 μm band.
_{a In 1-a N b As} c P 1-bc (0 ≦ a <1,0 <b <
1, 0 ≦ c <1) layer can be formed, and the conventional In
The conduction band discontinuity can be greatly increased as compared with the material system formed on the P substrate, and the injection carrier confinement efficiency can be improved. Therefore, the semiconductor light emitting device can have good temperature characteristics, and can easily and easily manufacture a high-performance semiconductor light emitting device having a long wavelength of 1.3 μm band, 1.5 μm band or the like. it can.

That is, GaI close to the lattice constant of InP
Since nAsP originally has a band gap energy corresponding to a long wavelength of 0.9 to 1.7 μm, the lattice constant is slightly larger than that of InP, and the band gap energy is 1.3 μm band and 1.5 μm band. In the case of GaInAsP slightly larger than the value corresponding to the above, the N composition is smaller than that of the InGaNAs / GaAs-based material and the 1.3 μm band, 1.5 μm
a light emitting layer of a light-emitting element of m band, or the like _{Ga a In 1-a N b} As c
A P _1-bc (0 ≦ a <1, 0 <b <1, 0 ≦ c <1) layer can be formed, and a semiconductor light-emitting element can be easily manufactured. Further, the addition of N has the effect of increasing the band offset ratio of the conduction band.
Since a heterojunction composed of a light emitting layer and another layer having a larger band gap energy than the light emitting layer is included, the conventional In
As compared with the material system formed on the P substrate, the band discontinuity of the conduction band can be remarkably increased, and the efficiency of confining injected carriers can be improved. Therefore, the 1.3 μm band, which has good temperature characteristics and high performance,
A long-wavelength semiconductor light emitting device such as a 5 μm band can be easily formed.

Furthermore, large Ga _a and In composition and As composition compared to Ga composition and P composition, respectively In _1-a N _b A
s _c P _1-bc (e.g., a <0.47,1-bc =
If 0) is selected, a long-wavelength semiconductor light-emitting device having a wavelength of 1.7 μm or more that is lattice-matched to an InP substrate, which cannot be formed by a conventional GaInAsP / InP-based material, can be formed. Conventionally, this wavelength band is GaInb on a GaSb substrate.
Although a material containing Sb (antimony) such as AsSb is used, according to the present invention, a semiconductor light emitting device can be manufactured using an inexpensive and high-quality InP substrate.

The semiconductor light emitting device according to the second aspect of the present invention
The guide layer, the barrier layer or the clad layer
Is larger in band gap energy than the light emitting layer.
Ga _dIn_1-dN_eAs_fP_1-ef(0 ≦ d <1, 0 ≦ e
<1, 0 ≦ f <1) layer,
Achieved the stated purpose.

According to the above configuration, the light emitting layer is formed of Ga _a In
_{1-a N b As c P} 1-bc (0 ≦ a ≦ 1,0 <b <1,0 ≦
formed of c <1) layer, guide layer, a barrier layer or a cladding layer, a large Ga _d In _1-d N of the band gap energy than the emission layer _{e As f P 1- ef (0} ≦ d <1,0 ≤
e <1, 0 ≦ f <1), the lattice constant, band gap energy and the like are controlled to form the light emitting layer and another layer having a band gap energy larger than that of the light emitting layer. A laminated structure including a heterojunction can be formed, and a high-performance long-wavelength semiconductor light-emitting device having good temperature characteristics and high performance can be easily manufactured.

According to a third aspect of the present invention, there is provided a semiconductor light emitting device.
The barrier layer and the guide _{layer, Ga d In 1-d N} e A
s _f P _1-ef (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) layers, and the cladding layer has a band gap energy higher than that of the barrier layer and the guide layer.
By being formed in _{x In 1-x As y P} 1-y (0 ≦ x <1,0 ≦ y <1) layer has achieved the above objects.

According to the above structure, the light emitting layer is formed of Ga _a In
_{1-a N b As c P} 1-bc (0 ≦ a ≦ 1,0 <b <1,0 ≦
formed of c <1) layer, the barrier layer and the guide layer, Ga _{d
In 1-d N e As f} P 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,
0 ≦ f <1) layer, and the clad layer is made of Ga having a band gap energy larger than that of the barrier layer and the guide layer.
Since _{x In 1-x As y P} 1-y (0 ≦ x <1,0 ≦ y <1) are formed by layers, it is possible to form a SCH structure or a quantum well structure reduces the threshold current In addition, the output can be improved, and the device performance of the semiconductor light emitting device can be improved.

According to a fourth aspect of the present invention, there is provided a semiconductor light emitting device comprising:
The light-emitting layer achieves the above object by having a lattice strain within a critical strain amount at which misfit dislocation occurs.

According to the above _{arrangement, Ga a In 1-a N} b As c
A light emitting layer formed of P _1-bc (0 ≦ a <1, 0 <b <1, 0 ≦ c <1) layers has a lattice strain within a critical strain amount at which misfit dislocations occur. Therefore, a strained quantum well structure can be formed, the threshold current can be reduced, and the device performance of the semiconductor light emitting device can be improved.

According to a fifth aspect of the present invention, there is provided a semiconductor light emitting device comprising:
The light emitting layer has a compressive lattice strain within the critical strain amount generated of misfit _{dislocations, Ga d In 1-d N} e As f P 1-ef
The barrier layer formed of the (0 ≦ d <1, 0 ≦ e <1, 0 ≦ f <1) layer has a tensile lattice strain within a critical strain amount at which misfit dislocation occurs. Achieves the above objectives.

According to the above configuration, the light emitting layer has a compressive lattice strain within the critical strain amount at which misfit dislocations occur, and the barrier layer has a tensile lattice strain within the critical strain amount at which misfit dislocations occur. Therefore, a strain-compensated quantum well device can be formed. By compensating for the strain in the well layer (light-emitting layer) and controlling the composition to have an appropriate amount of strain, the composition of the well layer can be improved. And the number of well layers can be increased to reduce the threshold current density. Therefore, the device performance of the semiconductor light emitting device can be improved.

The semiconductor light emitting device according to the invention of claim 6 is
The light emitting layer has a tensile lattice strain within the critical strain amount generated of misfit _{dislocations, Ga d In 1-d N} e As f P
_The barrier layer formed of the _1-ef (0 ≦ d <1, 0 ≦ e <1, 0 ≦ f <1) layer has a compressive lattice strain within a critical strain amount at which misfit dislocation occurs. By doing so, the above objective has been achieved.

According to the above structure, the light emitting layer has a tensile lattice strain within the critical strain amount at which misfit dislocations occur, and the barrier layer has a compressive lattice strain within the critical strain amount at which misfit dislocations occur. As a result, a strain-compensated quantum well can be formed, and the strain in the well layer (light-emitting layer) can be compensated to control an appropriate amount of strain to a composition. Therefore, the threshold current density can be reduced and the device performance of the semiconductor light emitting device can be improved by increasing the degree of freedom of the composition of the well layer or increasing the number of well layers.

The manufacturing method of a semiconductor light-emitting device of the invention according to claim 7, wherein the claim 1 including the N of claim 6, wherein _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a <1, 0 <
b <1, 0 ≦ c <1) The light emitting layer formed of a layer and N
Containing _{Ga d In 1-d N e} As f P 1-ef (0 ≦ d <
1, 0 ≦ e <1, 0 ≦ f <1) a method for manufacturing a semiconductor light emitting device having the clad layer, the guide layer or the barrier layer comprising a layer, wherein the clad layer, the guide layer or the The barrier layer achieves the above object by forming a heterojunction by the presence or absence of the supply of the Ga material or by increasing or decreasing the supply amount of the Ga material, and the Ga composition is formed to be larger than the Ga composition of the light emitting layer. ing.

According to the above configuration, Ga _d In containing N
_{1-d N e As f P} 1-ef (0 ≦ d <1,0 ≦ e <1,0 ≦
A heterojunction is formed in the clad layer, the guide layer, or the barrier layer composed of the f <1) layer by the presence or absence of the supply of the Ga raw material or by increasing or decreasing the supply amount of the Ga raw material.
_{a a In 1-a N b} As c P 1-bc (0 ≦ a <1,0 <b <
1, 0 ≦ c <1) Since the light emitting layer formed of the layer is formed to have a larger Ga composition, it is only necessary to change the supply amount of the group III raw material which is smaller than the supply amount of the group V raw material. There is no need to supply or stop the supply of a large amount of N on the substrate to be grown during the growth of the light-emitting layer and the barrier layer. In the case of vapor-phase growth or the like, the turbulence of the gas flow is suppressed. Thus, the semiconductor light emitting device can be manufactured easily and with good reproducibility.

[0034]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. It should be noted that the embodiments described below are preferred embodiments of the present invention, and therefore, various technically preferable limitations are added. However, the scope of the present invention is not limited to the following description. The embodiments are not limited to these embodiments unless otherwise specified.

FIGS. 1 and 2 are views showing a first embodiment of a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device according to the present invention. Corresponding.

FIG. 1 is a front sectional view of a semiconductor light emitting device 1 to which a first embodiment of a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device according to the present invention is applied.

In FIG. 1, a semiconductor light emitting device 1 has a clad layer 3, an active layer 4, a clad layer 5, and a cap layer 6 sequentially laminated on a growth substrate 2 formed of an n-type InP layer. A GaInNAsP layer that is an N-based mixed crystal semiconductor material containing at least N is formed on a growth substrate 2 that is an InP layer.

The cladding layer 3 is formed on the substrate 2 to be grown, which is an InP layer, and is formed of n-type InP.

The active layer 4 is formed on the clad layer 3 which is an n-type InP layer, and is formed of a GaInNAsP layer,
Lattice-matched to the growth substrate 2 which is an nP layer, and the wavelength is 1.4 μm.
At least a mixed crystal containing N semiconductor _{Ga a In 1-a N b} As c of
P _1-bc (0 ≦ a <1, 0 <b <1, 0 ≦ c <1) layers.

The cladding layer 5 is formed on the active layer 4,
It is formed of a p-type InP layer. The cap layer 6 is made of p ⁺
It is formed of a type InGaAs layer.

That is, the semiconductor light emitting device 1 has a DH (Do) in which an active layer 4 is formed of a GaInNAsP layer and cladding layers 3 and 5 are formed of an InP layer on a growth substrate 2 which is an InP layer.
ubleHetero Junction) structure.

Next, a method of manufacturing the semiconductor light emitting device 1 will be described with reference to FIG. FIG. 2 shows MOCVD
(Metal Organic Chemical Vapor Deposition) Equipment 1
FIG. 1 is a schematic configuration diagram of a reaction chamber portion of a MOCVD apparatus 1;
0 is a horizontal furnace. The MOCVD apparatus 10 is not limited to a horizontal furnace, and may be a vertical furnace.

The MOCVD apparatus 10 has a reaction chamber 11 inside.
A cooling tube 13 is provided around a quartz reaction tube 12 having a gas supply port, and a gas supply port 14 for supplying a raw material gas and a carrier gas to the reaction chamber 11 is formed in the quartz reaction tube 12. Further, an exhaust pipe 15 for exhausting the gas in the reaction chamber 11 is connected to the quartz reaction tube 12 and connected to an exhaust device (not shown). Reaction chamber 11 of quartz reaction tube 12
Inside, a carbon susceptor 16 is provided, and the carbon susceptor 16 is heated by a high-frequency heating coil 17. The temperature of the carbon susceptor 16 heated by the high-frequency heating coil 17 is detected by a thermocouple 18. The substrate 2 to be grown is set on the carbon susceptor 16.

In order to manufacture the semiconductor light emitting device 1 using the MOCVD apparatus 10, an InP substrate is set as the substrate 2 to be grown on the carbon susceptor 16, and the pressure in the reaction chamber 11 is set to 1. 3 × 10 ⁴ P
Reduce the pressure to a. Then, the temperature is detected by the thermocouple 18 and the carbon susceptor 16 is heated by the high-frequency heating coil 17 to control the heating of the InP substrate, which is the growth target substrate 2, to a predetermined temperature, thereby simultaneously supplying the source gas and the carrier gas. The cladding layer 3, the active layer 4, the cladding layer 5, and the cap layer 6 are sequentially laminated on the InP substrate, which is the substrate to be grown 2, by supplying the mixture into the reaction chamber 11 through the port 14.

First, a case where a GaInNAsP layer is formed on the InP layer, which is the growth substrate 2, using the MOCVD apparatus 10 will be described.

As a raw material gas, as a group III raw material, T
MG (trimethylgallium), TEG (triethylgallium), TMI (trimethylindium), or
TEI (triethylindium) as a raw material for As, AsH ₃ (arsine) as a raw material for P, PH ₃
(Phosphine) as a raw material for N, DMHy (ヂ methylhydrazine), MMHy
(Monomethylhydrazine) or TBA (tertiary butylamine) or the like, and H ₂ is used as a carrier gas.

When the raw material gas and the carrier gas are simultaneously supplied from the gas supply port 14 into the reaction chamber 11 under the above conditions, the crystal is grown by the thermal decomposition of the raw material gas and the surface reaction of the growth substrate 2 which is the InP layer. Filmed.

The GaInNAsP layer obtained under the above conditions is lattice-matched to the InP layer as the substrate 2 to be grown.
PL (photoluminescence) center wavelength is about 1.4 μ
m. The emission wavelength of such a GaInNAsP layer can be increased by increasing the composition of In, As, and N.

That is, generally, when a small amount of N of about several% is added to GaInNAsP, the lattice constant tends to be small and the band gap energy tends to be small. Therefore, Ga _x In _{1-x having} a larger lattice constant than InP
When As _y P _1-y in the addition of N, the band gap energy becomes smaller than the _{Ga x In 1-x As y} P 1-y, further conditions the lattice constant matches with InP is present. As described above, since the GaInNAsP layer can be lattice-matched to the substrate 2 to be grown, which is an InP layer, the 1.3 μm band, 1.
It is possible to form a 5 μm band device.

Therefore, using the MOCVD apparatus 10 described above, G is lattice-matched to the substrate 2 to be grown, which is an InP layer.
Using the aInNAsP layer, the semiconductor light emitting device 1 having the laminated structure shown in FIG. 1 was formed.

Using the semiconductor light emitting device 1 wafer,
A device having an insulating film stripe structure having a stripe width of 5 μm and an element length of 200 μm was manufactured. The semiconductor light emitting element 1 has a lattice constant larger than that of the substrate 2 to be grown, which is an InP layer, and has a wavelength shorter than 1.4 μm.
The wavelength and the lattice constant are controlled by adding a small amount of N to InAsP. That is, by adding N, the lattice constant is reduced and the wavelength becomes longer. Further, the addition of N has the effect of reducing the bandgap energy and increasing the band discontinuity of the conduction band due to the high electronegativity of N, and the same wavelength of 1.4 μm.
The band discontinuity of the conduction band is larger than in the case where GaInAsP corresponding to m is used for the light emitting layer (active layer).

Therefore, the conventional material system GaIn
As compared with a light-emitting element using an AsP / InP-based material, overflow of injected carriers is drastically reduced, so that temperature characteristics can be remarkably improved.

In this embodiment, GaIn
The case where the active layer 4 as the NAsP layer is lattice-matched to the substrate 2 to be grown as the InP layer has been described.
The active layer 4, which is an nNAsP layer, does not have to be perfectly lattice-matched to the substrate 2 to be grown, which is an InP layer.

In the above-described embodiment, the InP layers are used as the cladding layers 3 and 5. However, the cladding layers 3 and 5 are not limited to the InP layers, If the energy is large, I
Ga having a composition that can be lattice-matched to the growth substrate 2 which is an nP layer
_{x In 1-x As y P} 1-y may be a (0 ≦ x <1,0 ≦ y <1) layer.

[0055] Furthermore, In composition and As composition, as compared to the respective Ga composition and P composition, large Ga _a In _1-a N
_b As _c P _1-bc (e.g., a <0.47,1-bc =
If 0) is selected, it is possible to form a long-wavelength semiconductor light-emitting device having a wavelength of 1.7 μm or more that is lattice-matched to the growth substrate 2 which is an InP layer, which cannot be formed by a conventional GaInAsP / InP-based material. Conventionally, this wavelength band is defined by Ga on a GaSb substrate.
Although a material containing Sb (antimony) such as InAsSb is used, according to the present embodiment, it can be manufactured using a low-cost and high-quality InP substrate 2.

FIGS. 3 to 5 are views showing a second embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention. An SCH-MQW (Separate Confinement H) having a GaInAsP active layer (well layer) of 1.55 μm, a barrier layer and a guide layer of GaInAsP having a wavelength of 1.3 μm, which is lattice-matched to an InP substrate, and an InP clad layer.
etero-Structure-Multi Quantum Well), and corresponds to claims 1 to 3.

FIG. 3 is a front sectional view showing a laminated structure of the semiconductor light emitting device 20. The semiconductor light emitting device 20 is formed of an n-type InP layer on a growth substrate 21 which is an n-type InP layer. Cladding layer 22, guide layer 23 formed of GaInAsP layer, MQW layer 24, guide layer 25 formed of GaInAsP layer, clad layer 26 formed of p-type InP layer, and cap formed of p ⁺ -type InGaAs layer The layers 27 are sequentially stacked.

The MQW layer 24 is made of GaInNAs having a wavelength of 1.55 μm and lattice-matched to the growth substrate 21 which is an InP layer.
GaInAs lattice-matched to a well layer formed of a P layer and a substrate 21 to be grown as an InP layer and having a wavelength of 1.3 μm.
And a barrier layer formed of a P layer. The semiconductor light emitting device 20 includes guide layers 23 and 25 formed of a GaInAsP layer and a cladding layer 2 formed of an InP layer.
2, 26 and a SCH-MQW structure including a gap layer 27 formed of a p ⁺ -type InGaAs layer.

In the semiconductor light emitting device 20, the well layer of the MQW layer 24 has a lattice constant larger than that of InP and a wavelength of 1.55.
A small amount of N is added to GaInAsP under a condition shorter than μm to control the wavelength and the lattice constant.
And layers. As described above, when N is added to GaInAsP, the lattice constant becomes smaller, and the wavelength becomes longer.
When N is added to GaInAsP, the electronegativity of N is large, so that the band gap energy can be reduced and the band discontinuity of the conduction band can be increased. As compared with the case of using GaInAsP corresponding to 55 μm, FIG.
As shown in (1), the band discontinuity of the conduction band can be increased. Therefore, as compared with a semiconductor laser using a GaInAsP / InP-based material, which is a conventional material system as shown in FIG. 4, overflow of injected carriers can be greatly reduced, and temperature characteristics can be dramatically improved. Can be done.

Note that the composition ratio of the well layer formed of GaInNAsP in the MQW layer 24 is
It can be selected in a range where the energy of the valence band does not become smaller than that of the barrier layer formed of AsP.

The cladding layers 22 and 26 need not be InP layers, but may be Ga _x In _{1 -x} A having a larger band gap energy than the barrier layers and guide layers of the MQW layer 24.
_{s y P 1-y (0} ≦ x <1,0 ≦ y <1) layer may be used.

FIG. 6 is a view showing a third embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, a GaInNAsP active layer (well layer) is formed on an InP substrate. It is not completely lattice-matched and has a strain within a critical film thickness, and corresponds to claims 1 to 4.

FIG. 6 is a front sectional view showing a laminated structure of the semiconductor light emitting device 30. The semiconductor light emitting device 30 is formed of an n-type InP layer on a growth substrate 31 which is an n-type InP layer. Cladding layer 32, guide layer 33 formed of GaInAsP layer, MQW layer 34, guide layer 35 formed of GaInAsP layer, clad layer 36 formed of p-type InP layer, and cap formed of p ⁺ -type InGaAs layer The layers 37 are sequentially stacked. And MQW layer 3
4 is a well layer formed of a GaInNAsP layer,
A barrier layer formed of an InAsP layer.

The well layer (active layer) formed of the GaInNAsP layer of the MQW layer 34 is not completely lattice-matched to the growth substrate 31 formed of InP, and has a strain within a critical thickness. have. That is, the semiconductor light emitting element 3
0 indicates that the lattice constant of the well layer (active layer) formed of the GaInNAsP layer of the MQW layer 34 is larger than that of the growth substrate 31 which is the InP layer, as compared with the MQW layer 21 of the second embodiment. , And has a compression strain.

In other words, the semiconductor light emitting element 30 has a well layer, which is a GaInNAsP layer having a wavelength of 1.55 μm, and an In layer.
The wavelength is 1.3 μm, which is lattice-matched to the growth substrate 31 which is a P layer.
The SCH-MQW structure has an MQW layer 34 formed of a GaInAsP layer, which is a m layer, and guide layers 33, 35, and cladding layers 32, 36, which are InP layers.

Then, the semiconductor light emitting element 30 has its MQ
The wavelength and the lattice constant of the well layer of the W layer 34 are controlled by adding a small amount of N to GaInAsP having a lattice constant larger than that of the InP layer and a wavelength shorter than 1.55 μm. That is, compared to the second embodiment, N is added to GaInAsP having a larger lattice
A compression strain well layer of the W layer 34 is formed. Thus G
When N is added to aInAsP, the lattice constant becomes smaller and the wavelength becomes longer.

When N is added to GaInAsP,
Since the electronegativity of N is large, the band gap energy can be reduced and the band discontinuity of the conduction band can be increased.

Therefore, the conventional material system GaIn
Compared to a semiconductor laser using an AsP / InP-based material, the overflow of injected carriers can be significantly reduced, and the temperature characteristics can be dramatically improved.

Then, the GaInNAsP of the MQW layer 34 is formed.
The composition ratio of the well layer, which is a layer, is GaInA of the MQW layer 34.
It can be selected in a range where the energy of the valence band does not become smaller than that of the barrier layer which is the sP layer.

Further, in the semiconductor light emitting device 30,
The threshold current density can be reduced by the effect of the strained quantum well.

In this embodiment, the well layer (active layer) of GaInNAsP of the MQW layer 34 is formed of In.
The case where the lattice constant is larger than that of the growth substrate 31 which is the P layer and the substrate has the compressive strain has been described.
4 is a GaInNAsP well layer (active layer).
The lattice constant may be smaller than the growth substrate 31 which is the P layer, and the substrate may have tensile strain.

FIG. 7 is a view showing a fourth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, the well layer (active layer) of GaInNAsP of the MQW layer is used. ) Is not perfectly lattice-matched to the InP substrate, and has a strain within a critical film thickness, and corresponds to claims 1 to 6.

In FIG. 7, the semiconductor light emitting device 40 has n
N-type InP is formed on a growth substrate 41 formed of an n-type InP layer.
Cladding layer 42 formed of P layer, guide layer 43 formed of GaInAsP layer, MQW layer 44, GaInAs
A guide layer 45 formed of a P layer, a clad layer 46 formed of a p-type InP layer, and a cap layer 47 formed of a p ⁺ -type InGaAs layer are sequentially laminated.
Is a well layer (compression layer) formed of a GaInNAsP layer
And a barrier layer formed of a GaInAsP layer.

That is, the active region of the semiconductor light emitting device 40 has a strain-compensated MQW (multiple quantum well) structure, and the lattice constant of a well layer (active layer) formed of a GaInNAsP layer is an InP layer. Is larger than the lattice constant of the substrate 41 to be grown, has a compressive strain, and
The lattice constant of the barrier layer formed of the aInAsP layer is I
smaller than the lattice constant of the growth substrate 41 which is an nP layer,
It has tensile strain.

The well layer of the MQW layer 44 is made of InP.
The lattice constant is larger than that of the growth substrate 41 which is a layer,
By adding a small amount of N to GaInAsP having a wavelength shorter than 1.55 μm and controlling the wavelength and the lattice constant, GaInAsP having a larger lattice constant as compared with the second embodiment can be obtained. N is added to form a compressive strain well layer.

That is, when N is added to GaInAsP, the lattice constant becomes smaller and the wavelength becomes longer. Further, when N is added to GaInAsP, the electronegativity of N is large, so that the band gap energy can be reduced and the band discontinuity of the conduction band can be increased, which corresponds to the same wavelength of 1.55 μm. Ga
The band discontinuity of the conduction band becomes larger as compared with the case where InAsP is used. Therefore, the conventional material system G
Compared with a semiconductor laser using aInAsP / InP-based material, the overflow of injected carriers can be drastically reduced, and the temperature characteristics can be dramatically improved.

The composition ratio of the well layer, which is the GaInNAsP layer, of the MQW layer 44 can be selected within a range where the energy of the valence band does not become smaller than that of the barrier layer, which is the GaInAsP layer.

Further, the semiconductor light emitting device 4 of the present embodiment
At 0, the threshold current density can be reduced due to the effect of the strained quantum well.

In the present embodiment, the well layer (active layer) as the GaInNAsP layer of the MQW layer 44 is a compression strain layer, and the barrier layer as a GaInAsP layer is a tensile strain layer. The layer (active layer) may be a tensile strain layer, and the barrier layer, which is a GaInAsP layer, may be a compression strain layer.

FIG. 8 is a diagram showing a fifth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, the InNAsP layer is used as a well layer,
It has a strain-compensated MQW (Multiple Quantum Well) structure using an aInNAsP layer as a barrier layer, and corresponds to claims 1 to 5 and 7.

In FIG. 8, the semiconductor light emitting device 50 has n
N-type InP is formed on a growth substrate 51 formed of the n-type InP layer.
Cladding layer 52 formed of P layer, guide layer 53 formed of GaInAsP layer, MQW layer 54, GaInAs
A guide layer 55 formed of a P layer, a cladding layer 56 formed of a p-type InP layer, and a cap layer 57 formed of p ⁺ -type InGaAs are sequentially stacked.

The MQW layer 54 is formed in a strain-compensated MQW (multiple quantum well) structure having a well layer formed of an InNAsP layer and a barrier layer formed of a GaInNAsP layer. The lattice constant of the formed well layer is larger than the lattice constant of the growth substrate 51 formed of the InP layer, has a compressive strain, and has a lattice constant of the barrier layer formed of the GaInNAsP layer. Are smaller than the lattice constant of the substrate to be grown 51, which is an InP layer, and have tensile strain.

The well layer of the MQW layer 54 is made of InP.
The lattice constant of InAsP is larger than that of the substrate 51 to be grown, and the wavelength is shorter than 1.55 μm.
Is added to control the wavelength and the lattice constant.

Therefore, with the semiconductor light emitting device 50 of the present embodiment, an effect using a strain-compensated MQW (multiple quantum well) can be obtained.

In the present embodiment, the growth condition of the barrier layer that is the GaInNAsP layer of the MQW layer 54 is different from the growth condition of the well layer that is the InNAsP layer.
The raw material of Ga (TMG in this embodiment) is added, and the supply amounts of the raw materials of In, N, As, and P are the same.

As described above, when the lattice constant of the well layer as the InNAsP layer is larger than that of the growth substrate 51 as the InP layer, GaIn is controlled by controlling the amount of Ga to be added.
The lattice constant of the barrier layer, which is an NAsP layer, can be lattice-matched to the growth substrate 51, which is an InP layer, or can be smaller than that of the growth substrate 51, which is an InP layer.

Further, since N is contained in both the well layer and the barrier layer of the MQW layer 54, a large amount of N is supplied to the reaction chamber 11 during the growth of the well layer and the barrier layer.
There is no need to stop supply, especially for MOCVD
In the method, the turbulence of the gas flow can be suppressed, and a good interface can be easily formed with good reproducibility.

In this embodiment, In,
Although the supply amounts of the N, As, and P raw materials were prepared without changing, the same can be applied even if the supply amounts were changed.

Although the case where the well layer of the MQW layer 54 of the present embodiment does not contain Ga has been described, the band gap energy of the barrier layer is increased by increasing the Ga composition of the barrier layer. Then, Ga
May be included.

Although the invention made by the inventor has been specifically described based on the preferred embodiments, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the invention. It goes without saying that it is possible.

[0091]

According to the semiconductor light emitting device of the first aspect of the present invention, the mixed crystal semiconductor Ga _a In _1-a N containing at least N is provided.
_{b As c P 1-bc (} 0 ≦ a <1,0 <b <1,0 ≦ c <
1) A semiconductor light-emitting element having a stacked structure in which a layer is used as a light-emitting layer, wherein the stacked structure is formed on an InP substrate, and the stacked structure includes the light-emitting layer and another layer having higher band gap energy than the light-emitting layer. And 1.3 μm band, 1.5 μm
With a slight addition of N to GaInAsP, which is slightly larger than the value corresponding to the band, the 1.3 μm band, 1.
A light emitting layer of 5μm band such as _{Ga a In 1-a N b} As c P
_1-bc (0 ≦ a <1, 0 <b <1, 0 ≦ c <1) layers can be formed, and the conduction band discontinuity can be reduced as compared with a conventional material system formed on an InP substrate. By dramatically increasing the size, the efficiency of confining injected carriers can be improved. Therefore, the temperature characteristics of the semiconductor light emitting device can be improved, and the high performance of 1.3 μm can be obtained.
Band, 1.5μm band and other long wavelength semiconductor light emitting devices
And it can be easily manufactured.

[0092] According to the semiconductor light-emitting device of the second aspect of the present invention, the light-emitting _{layer, Ga a In 1-a N} b As c P 1-bc (0
≦ a ≦ 1, 0 <b <1, 0 ≦ c <1) layers, and the guide layer, the barrier layer or the clad layer is formed of Ga _d In _{1-d Ne} As having a band gap energy larger than that of the light emitting layer. _f
Since it is formed of P _1-ef (0 ≦ d <1, 0 ≦ e <1, 0 ≦ f <1) layers, the lattice constant, band gap energy, and the like are controlled so that the light emitting layer and the light emitting layer Also, a laminated structure including a heterojunction formed by another layer having a large band gap energy can be formed, and a high-performance long-wavelength semiconductor light-emitting device having good temperature characteristics and high performance can be easily manufactured.

[0093] According to the semiconductor light-emitting device of the third aspect of the present invention, the light-emitting _{layer, Ga a In 1-a N} b As c P 1-bc (0 ≦
a ≦ 1,0 <b <formed by 1,0 ≦ c <1) layer, the barrier layer and the guide _{layer, Ga d In 1-d N} e As f P 1-ef (0
≦ d ≦ 1,0 ≦ e <1,0 ≦ f <1) is formed by layer, the cladding layer than the barrier layer and the guide layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 ≦ x <
1, 0 ≦ y <1), the SCH structure and the quantum well structure can be formed, the threshold current can be reduced, the output can be improved, and the device performance of the semiconductor light emitting device can be improved. Can be improved.

[0094] According to the semiconductor light-emitting device of the fourth aspect of the present _{invention, Ga a In 1-a N} b As c P 1-b- c (0 ≦ a <1,0
Since the light emitting layer formed of the <b <1, 0 ≦ c <1) layers has a lattice strain within a critical strain amount at which misfit dislocation occurs, a strained quantum well structure can be formed. By reducing the threshold current, the device performance of the semiconductor light emitting device can be improved.

According to the fifth aspect of the present invention, the light emitting layer has a compression lattice strain within a critical strain amount at which misfit dislocations occur, and the barrier layer has a critical lattice strain at which misfit dislocations occur. Since it has a tensile lattice strain within the strain amount, a strain-compensated quantum well device can be formed, and the composition of the well layer (light-emitting layer) is controlled to have an appropriate strain amount by compensating for the strain. By doing so, it is possible to increase the degree of freedom of the composition of the well layer or increase the number of well layers, thereby reducing the threshold current density. Therefore, the device performance of the semiconductor light emitting device can be improved.

According to the semiconductor light emitting device of the present invention, the light emitting layer has a tensile lattice strain within a critical strain amount at which misfit dislocation occurs, and the barrier layer has a critical strain at which misfit dislocation occurs. Since it has a compression lattice strain within the strain amount, it is possible to form a strain compensation type quantum well, and to compensate for the strain in the well layer (light emitting layer) and control the appropriate strain amount to the composition. Can be. Therefore, by increasing the degree of freedom of the composition of the well layer or increasing the number of well layers,
The threshold current density can be reduced, and the device performance of the semiconductor light emitting device can be improved.

[0097] According to the manufacturing method of the semiconductor light emitting device of the present invention according to claim 7, including the _{N Ga d In 1-d N} e As f P
_{A 1-ef} (0 ≦ d <1, 0 ≦ e <1, 0 ≦ f <1) cladding layer, guide layer or barrier layer is formed of Ga
A heterojunction is formed by the presence or absence of a raw material supply or an increase or decrease in the supply amount of a Ga raw material, and the Ga composition is changed to Ga _a In _1- aN
_{b As c P 1-bc (} 0 ≦ a <1,0 <b <1,0 ≦ c <
1) Since the light-emitting layer formed of the layer is formed to have a Ga composition larger than that of the light-emitting layer, the light-emitting layer III is smaller than the supply amount of the group V raw material.
It is only necessary to change the supply amount of the group material, and it is not necessary to supply or stop the supply of the N material having a large supply amount onto the substrate to be grown during the growth of the light emitting layer and the barrier layer. In such a case, the turbulence of the gas flow can be suppressed,
A semiconductor light emitting device can be manufactured easily and with good reproducibility.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a layer structure of a semiconductor light emitting device to which a first embodiment of a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 2 is an MOC for manufacturing the semiconductor light emitting device of FIG.
The schematic block diagram of the reaction chamber part of a VD apparatus.

FIG. 3 is a front sectional view of a layer structure of a semiconductor light emitting device to which a second embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 4 shows GaInA before adding N to GaInAsP.
The figure which shows the band gap energy of the conduction band side of a sP well layer, a GaInAsP barrier layer, and a guide layer.

FIG. 5 shows GaInNAs obtained by adding N to GaInAsP.
The figure which shows the band gap energy of the conduction band side of P well layer, GaInAsP barrier layer, and guide layer.

FIG. 6 is a front sectional view of a layer structure of a semiconductor light emitting device to which a third embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 7 is a front sectional view of a layer structure of a semiconductor light emitting device to which a fourth embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 8 is a front sectional view of a layer structure of a semiconductor light emitting device to which a fifth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention is applied.

[Explanation of symbols]

 Reference Signs List 1 semiconductor light emitting element 2 substrate to be grown 3 clad layer 4 active layer 5 clad layer 6 cap layer 10 MOCVD apparatus 11 reaction chamber 12 quartz reaction tube 13 cooling pipe 14 gas supply port 15 exhaust pipe 16 carbon susceptor 17 high frequency heating coil 18 thermocouple 20, 30, 40, 50 Semiconductor light emitting device 21, 31, 41, 51 Substrate to be grown 22, 32, 42, 52 Cladding layer 23, 33, 43, 53 Guide layer 24, 34, 44, 54 MQW layer 25, 35 , 45, 55 Guide layers 26, 36, 46, 56 Cladding layers 27, 37, 47, 57 Cap layers

Claims (7)

[Claims] 1. A semiconductor light emitting device having a laminated structure in which a light emitting layer and a clad layer, a light emitting layer, a guide layer, and a clad layer, or a light emitting layer, a barrier layer, a guide layer, and a clad layer are stacked. at least mixed crystal semiconductor containing _{N Ga a In 1-a N} b As c P 1-bc (0 ≦ a <1,0 <
b <1, 0 ≦ c <1) layers, wherein the laminated structure is
A semiconductor light-emitting device comprising: a heterojunction formed on an InP substrate and formed by the light-emitting layer and another layer having a band gap energy larger than that of the light-emitting layer. Wherein said guide layer, the barrier layer or the cladding layer is larger _{Ga d In 1-d N e} As f P 1-ef (0 ≦ d bandgap energy than the light emitting layer <
2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed of 1,0≤e <1,0≤f <1) layers. 3. The method according to claim 1, wherein the barrier layer and the guide layer are formed of Ga _{d
In 1-d N e As f} P 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,
Formed by 0 ≦ f <1) layer, the cladding layer is larger _{Ga x In 1-x As y} P 1-y (0 ≦ x bandgap energy than the barrier layer and the guide layer <1,0 ≤
2. The semiconductor device according to claim 1, wherein y <1) is formed.
The semiconductor light-emitting device according to claim 1. 4. The semiconductor light emitting device according to claim 1, wherein said light emitting layer has a lattice strain within a critical strain amount at which misfit dislocation occurs. Wherein said light emitting layer has a compressive lattice strain within the critical strain amount generated of misfit _{dislocations, Ga d In 1-d N} e
As _f P _1-ef (0 ≦ d <1, 0 ≦ e <1, 0 ≦ f <
4. The semiconductor according to claim 1, wherein the barrier layer formed of 1) a layer has a tensile lattice strain within a critical strain amount at which misfit dislocation occurs. 5. Light emitting element. 6. The light emitting layer has a tensile lattice strain within a critical strain amount at which misfit dislocations are generated, and comprises Ga _d In _{1 -d.
N e As f P 1-ef} (0 ≦ d <1,0 ≦ e <1,0 ≦ f <
The semiconductor according to any one of claims 1 to 3, wherein the barrier layer formed of (1) a layer has a compressive lattice strain within a critical strain amount at which misfit dislocation occurs. Light emitting element. 7. including the N of claim 6, wherein the said claim _{1 Ga a In 1-a N} b As c P 1-b- c (0 ≦ a <1,0
<B <1,0 ≦ c <1 ) including the light emitting layer and N formed by the layer _{Ga d In 1-d N e} As f P 1-ef (0 ≦ d <
1, 0 ≦ e <1, 0 ≦ f <1) a method for manufacturing a semiconductor light emitting device having the clad layer, the guide layer or the barrier layer comprising a layer, wherein the clad layer, the guide layer or the A semiconductor light emitting device, wherein a heterojunction is formed in the barrier layer by the presence / absence of the supply of a Ga source or by an increase / decrease in the supply amount of the Ga source, and the Ga composition is formed larger than the Ga composition of the light emitting layer. Manufacturing method.