JPH10125924A - Org. thin film transistor, liq. crystal element and org. light emitting element - Google Patents
Org. thin film transistor, liq. crystal element and org. light emitting elementInfo
- Publication number
- JPH10125924A JPH10125924A JP8274401A JP27440196A JPH10125924A JP H10125924 A JPH10125924 A JP H10125924A JP 8274401 A JP8274401 A JP 8274401A JP 27440196 A JP27440196 A JP 27440196A JP H10125924 A JPH10125924 A JP H10125924A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film transistor
- thin film
- layer
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 61
- 239000013078 crystal Substances 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 84
- 239000004973 liquid crystal related substance Substances 0.000 claims description 35
- 239000000126 substance Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 9
- 230000005525 hole transport Effects 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 abstract description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 4
- 125000004434 sulfur atom Chemical group 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 230000005669 field effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- APLQAVQJYBLXDR-UHFFFAOYSA-N aluminum quinoline Chemical compound [Al+3].N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12 APLQAVQJYBLXDR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polyphenylenevinylene Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は大型ディスプレイ素
子を駆動する有機薄膜トランジスタと、この有機薄膜ト
ランジスタを用いた大型の液晶素子と、有機薄膜トラン
ジスタを用いた大型の有機発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin film transistor for driving a large display device, a large liquid crystal device using the organic thin film transistor, and a large organic light emitting device using the organic thin film transistor.
【０００２】[0002]
【従来の技術】直視型の大画面ディスプレイには、液晶
素子、プラズマ・ディスプレイ・パネル（ＰＤＰ）の開
発が盛んである。例えば液晶素子では１０インチクラス
以上のa-SiＴＦＴ直視パネルが主流となっている。また
ＰＤＰは４０インチクラスを目指して開発が進んでい
る。他の大型表示素子の方法としてプラズマアドレス型
の液晶素子も、このＰＤＰと同レベルの大きさのディス
プレイ素子の実現を目指している。この方式は大画面の
液晶素子を駆動するトランジスタの代わりにプラズマを
利用するものである。これらの素子は、大画面化に伴っ
て様々な課題に直面する。液晶素子では、駆動素子にプ
ラズマＣＶＤ法によるa-Siを用いており、大型化対応の
製造装置の開発が必要となり、製造コストの大幅な増加
がある。2. Description of the Related Art Development of a liquid crystal element and a plasma display panel (PDP) has been active in a direct-view large-screen display. For example, in the case of liquid crystal elements, a-Si TFT direct-view panels of a 10-inch class or more are mainly used. PDPs are being developed for the 40-inch class. As a method of another large-sized display element, a plasma-addressed liquid crystal element is also aimed at realizing a display element having the same size as this PDP. This method uses plasma instead of a transistor for driving a large-screen liquid crystal element. These elements face various problems as the screen size increases. In a liquid crystal element, a-Si formed by a plasma CVD method is used as a driving element, so that it is necessary to develop a manufacturing apparatus that can handle a large size, and the manufacturing cost is greatly increased.
【０００３】これに対して有機物で薄膜トランジスタを
形成することが可能になれば、塗布法あるいは低温の蒸
着法などで大型化が容易になるという考えがある。研究
段階ではあるが有機薄膜トランジスタの開発が盛んにな
ってきた。例えば、A.Dodabalapur等は、有機の活性半
導体層として蒸着法によって成膜するチオフェンオリゴ
マ膜（重合度６）を用いて電界効果移動度0.01〜0.03cm
2V-1s-1、トランジスタの電流オン／オフ比は６〜７桁
を得ている（「サイエンス」（SCIENCE、VOL.268,p.270
〜271））。但し、電流値は他のトランジスタに比べて
小さい。また、スイッチングに必要なゲート電圧とドレ
イン電圧が数十Ｖと高いのが欠点である。この性能は現
行のa-Siの電界効果移動度０.１〜０.５ｃｍ2V-1ｓ-1、
及び電流のオン／オフ比の〜７桁に近い。On the other hand, if it is possible to form a thin film transistor using an organic material, it is considered that the size can be easily increased by a coating method or a low-temperature deposition method. Although at the research stage, the development of organic thin film transistors has become active. For example, A. Dodabalapur et al. Use a thiophene oligomer film (degree of polymerization: 6) formed by an evaporation method as an organic active semiconductor layer, and have a field-effect mobility of 0.01 to 0.03 cm.
2 V −1 s −1 , and the transistor current on / off ratio is 6 to 7 digits (“Science” (SCIENCE, VOL.268, p.270)
~ 271)). However, the current value is smaller than other transistors. Another drawback is that the gate and drain voltages required for switching are as high as several tens of volts. This performance is based on the current field-effect mobility of a-Si of 0.1 to 0.5 cm 2 V −1 s −1 ,
And the on / off ratio of the current is close to ７7 digits.
【０００４】更に低温p-Siの電界効果移動度５０ｃｍ2V
-1ｓ-1、及び電流のオン／オフ比は〜７桁であり、高温
p-Siの電界効果移動度１００ｃｍ2V-1s-1、及びオン／
オフ比は〜７桁である。最も性能の良い単結晶Siになる
と、その電界効果移動度１５００ｃｍ2V-1s-1、及び電
流のオン／オフ比は９桁以上である。しかし、いずれの
トランジスタも大型化対応が非常に困難である。前出の
有機薄膜トランジスタは、この大型ディスプレイ素子で
も直視型の液晶素子の駆動素子として有力視されてい
る。Further, the field-effect mobility of low-temperature p-Si is 50 cm 2 V
-1 s -1 , and the on / off ratio of the current is ~ 7 digits,
The field effect mobility of p-Si is 100 cm 2 V −1 s −1 , and the on /
The off ratio is up to 7 digits. When single crystal Si has the best performance, its field effect mobility is 1500 cm 2 V −1 s −1 and the current on / off ratio is 9 digits or more. However, it is very difficult to increase the size of any of the transistors. The organic thin film transistor described above is considered to be a promising driving element for a direct-view type liquid crystal element even in this large display element.
【０００５】バックライトが必要な液晶素子に対して発
光型の大画面ディスプレイデバイスへの要望がある。前
出のＰＤＰが代表例であるが、有機薄膜の発光素子の開
発も近年盛んである。モノマ分子の蒸着法による素子
と、ポリフェニレンビニレン（ＰＰＶ）を初めとする高
分子材料を塗布形成する素子が有望である。これらの有
機発光材料を用いてカラー表示素子を作製する場合、液
晶素子の開発の歴史をから推測されるように近い将来、
トランジスタによるアクティブ型駆動が主流になるであ
ろう。単純なマトリックス電極配線によると、大画面で
発生する輝度傾斜を防ぐためである。現状ではアクティ
ブ駆動が困難で、パシブ駆動の延長となってしまう。There is a demand for a light-emitting large-screen display device for a liquid crystal element requiring a backlight. Although the above-mentioned PDP is a typical example, the development of a light-emitting element using an organic thin film has been active in recent years. Promising elements are those obtained by vapor deposition of monomer molecules and those formed by coating a polymer material such as polyphenylenevinylene (PPV). In the case of producing a color display element using these organic light emitting materials, in the near future as inferred from the history of development of liquid crystal elements,
Active drive by transistors will be mainstream. This is because the simple matrix electrode wiring prevents a luminance gradient from occurring on a large screen. At present, active driving is difficult, and it extends passive driving.
【０００６】[0006]
【発明が解決しようとする課題】有機薄膜トランジスタ
の性能の第１の課題は、電界効果移動度が0.01〜0.03cm
2V-1s-1とa-Siの電界効果移動度0.1〜0.5cm2V-1s-1に対
して１桁以上小さいことである。第２の課題は駆動電圧
がゲート電圧、ドレイン電圧共に数十Ｖと高いことであ
る。但し、プラズマアドレス型液晶素子の場合、データ
電圧１００Ｖ（ゲート電圧に相当）、放電電圧350V(ド
レイン電圧に相当)であり、必ずしも欠点とはならな
い。液晶素子の駆動は通常５Ｖ以下でなされるが、液晶
モードによっては１５Ｖ以上の高駆動電圧が必要になる
こともある。本発明は有機薄膜トランジスタにおいて電
界効果移動度を向上させることと、駆動電圧を低減させ
ることである。SUMMARY OF THE INVENTION Organic thin film transistor
The first issue of the performance of the device is that the field-effect mobility is 0.01 to 0.03 cm.
TwoV-1s-1And a-Si field-effect mobility 0.1-0.5cmTwoV-1s-1To
That is, it is smaller by one digit or more. The second issue is the drive voltage
Is as high as several tens of volts for both gate voltage and drain voltage.
You. However, in the case of the plasma address type liquid crystal element, the data
Voltage 100V (corresponding to gate voltage), Discharge voltage 350V (D
(Equivalent to rain voltage), which is not necessarily a disadvantage.
No. The driving of the liquid crystal element is usually performed at 5 V or less.
High drive voltage of 15V or more is required depending on the mode
Sometimes. The present invention relates to an organic thin film transistor.
To improve field effect mobility and reduce drive voltage
Is Rukoto.
【０００７】液晶素子の大型化に伴って視野角の広い特
性が望まれる。視野角の広い液晶表示モ−ドである垂直
配向の負の誘電異方性を持つ液晶の場合、駆動電圧が高
く、通常のa-Siトランジスタでは駆動が困難である。ま
た大型化に伴って、動作時に液晶配向を保持するために
各画素に導入される補助容量を形成することが困難にな
る。本発明は液晶素子において、視野角特性の良い大型
ディスプレイを得ることである。As the size of the liquid crystal element increases, a wide viewing angle characteristic is desired. In the case of liquid crystal having a negative dielectric anisotropy of vertical alignment, which is a liquid crystal display mode with a wide viewing angle, the driving voltage is high and it is difficult to drive with a normal a-Si transistor. In addition, as the size increases, it becomes difficult to form an auxiliary capacitor introduced to each pixel in order to maintain liquid crystal alignment during operation. An object of the present invention is to obtain a large display having a good viewing angle characteristic in a liquid crystal element.
【０００８】有機発光素子を形成する場合、発光層は正
孔輸送層と連続で透明電極上に数百オングスオロ−ムと
極薄く成膜される。これに画素毎に駆動用のトランジス
タを設ける場合、通常トランジスタを基板面に設けてお
いてから、発光層を設ける。このため開口率が低い。本
発明は大型発光素子において、開口率が大きく明るいデ
ィスプレイを得ることである。When an organic light emitting device is formed, the light emitting layer is formed as thin as several hundred angstroms on a transparent electrode continuously with the hole transport layer. When a driving transistor is provided for each pixel, a transistor is usually provided on a substrate surface, and then a light emitting layer is provided. Therefore, the aperture ratio is low. An object of the present invention is to obtain a bright display having a large aperture ratio in a large light emitting element.
【０００９】[0009]
【課題を解決するための手段】電界効果移動度の課題を
解決するために、基板上にゲート電極、ソース電極、ド
レイン電極の３端子及び活性半導体層からなる薄膜トラ
ンジスタにおいて、活性半導体層が繰り返し単位を持つ
有機物であり、その繰り返し単位が５以上のオリゴマ分
子を備えたものである。In order to solve the problem of the field-effect mobility, in a thin film transistor including a gate electrode, a source electrode, a drain electrode, and an active semiconductor layer on a substrate, the active semiconductor layer is composed of repeating units. And an oligomer having 5 or more repeating units.
【００１０】駆動電圧の課題を解決するために、基板上
にゲート電極、ソース電極、ドレイン電極の３端子及び
活性半導体層からなる薄膜トランジスタにおいて、活性
半導体層が有機物からなり、ソース電極及びドレイン電
極と前記活性半導体層の間に有機物からなる電子輸送層
あるいは正孔輸送層を備えたものである。In order to solve the problem of the driving voltage, in a thin film transistor including a gate electrode, a source electrode, a drain electrode, and an active semiconductor layer on a substrate, the active semiconductor layer is made of an organic material, and the source electrode and the drain electrode are connected to each other. An electron transporting layer or a hole transporting layer made of an organic substance is provided between the active semiconductor layers.
【００１１】動作特性の課題を解決するために、基板上
にマトリクス状に配置された有機薄膜トランジスタと、
そのソース電極に接続する画素電極と、そのドレイン電
極に接続するデータバスと、そのゲート電極に接続し、
前記データバスに垂直に配置されるスキャンバスを有
し、この基板と一定間隔をもって設けられた透明電極を
被覆された透明基板が液晶層を介し、この透明電極と、
前記画素電極あるいは前記ソース電極との間に有機絶縁
性薄膜からなる静電容量を構成する蓄積容量電極を備え
たものである。In order to solve the problem of the operating characteristics, an organic thin film transistor arranged in a matrix on a substrate;
A pixel electrode connected to the source electrode, a data bus connected to the drain electrode, and a gate connected to the gate electrode,
It has a scan bus arranged vertically to the data bus, a transparent substrate coated with a transparent electrode provided at a constant interval with this substrate through a liquid crystal layer, this transparent electrode,
A storage capacitor electrode is provided between the pixel electrode and the source electrode to form a capacitance made of an organic insulating thin film.
【００１２】視野角特性の課題を解決するために、基板
上にマトリクス状に配置された有機薄膜トランジスタ
と、そのソース電極に接続する画素電極と、そのドレイ
ン電極に接続するデータバスと、そのゲート電極に接続
し、前記データバスに垂直に配置されるスキャンバスを
有し、この基板と一定間隔をもって設けられた透明電極
を被覆された透明基板が液晶層を介し、液晶が負の誘電
異方性を有し、垂直配向することを備えたものである。In order to solve the problem of viewing angle characteristics, an organic thin film transistor arranged in a matrix on a substrate, a pixel electrode connected to its source electrode, a data bus connected to its drain electrode, and a gate electrode thereof And a scan bus arranged perpendicularly to the data bus, and a transparent substrate coated with a transparent electrode provided at a constant interval from the substrate has a liquid crystal layer interposed therebetween, and the liquid crystal has a negative dielectric anisotropy. And vertical alignment is provided.
【００１３】開口率の課題を解決するために、透明な共
通電極が被覆された透明基板上に有機薄膜からなる電界
発光層、及び正孔輸送層が積層され、その上にマトリッ
クス状に分離された画素電極があり、各画素電極上に
は、ソース電極を介して有機薄膜トランジスタが配置さ
れることを備えた発光素子とするものである。In order to solve the problem of the aperture ratio, an electroluminescent layer composed of an organic thin film and a hole transport layer are laminated on a transparent substrate covered with a transparent common electrode, and are separated in a matrix form thereon. A pixel electrode, and an organic thin film transistor is disposed on each pixel electrode via a source electrode.
【００１４】[0014]
【発明の実態の形態】以下、本発明の実施の形態につい
て、図１から図５を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
【００１５】（実施の形態１）図１は逆スタガー構造の
有機薄膜トランジスタの断面を示す。図１において、１
は、ガラスを代表とする電気絶縁性基板であり、２はゲ
ート電極、３は電気絶縁層であり、例えば塗布形成可能
なシロキサン結合を主鎖に持つポリオルガノシロキサン
がある。４は活性半導体層であり、有機薄膜である。こ
の有機薄膜として（化５）のベンゼン環とイオウ原子が
直鎖状につながるフェニレンスルフィドのオリゴマ分子
を蒸着法によって形成した。Embodiment 1 FIG. 1 shows a cross section of an organic thin film transistor having an inverted staggered structure. In FIG. 1, 1
Is an electrically insulating substrate represented by glass, 2 is a gate electrode, 3 is an electrically insulating layer, for example, a polyorganosiloxane having a siloxane bond in its main chain which can be formed by coating. Reference numeral 4 denotes an active semiconductor layer, which is an organic thin film. As this organic thin film, an oligomer molecule of phenylene sulfide in which a benzene ring and a sulfur atom of Chemical Formula 5 are linearly formed was formed by a vapor deposition method.
【００１６】[0016]
【化５】 Embedded image
【００１７】他の例としてはチオフェンのオリゴマ分子
がある。５及び６はそれぞれドレイン電極とソース電極
である。ゲート電極は金をドレイン電極とソース電極は
アルミニウムを用いた。チャネル長は１２μｍとした。
オリゴマ層を形成するオリゴマの長さと蒸着条件によっ
てオリゴマ層の微結晶粒の大きさが制御される。最大〜
0.1cm2V-1s-1の電界効果移動度を得た。またオン／オフ
電流比はおよそ７桁と良好な結果である。チオフェンオ
リゴマの場合、グレインサイズが０．１μｍと小さいた
め、チャネル長に比べて小さく膜中を結晶粒界をホッピ
ング伝導することになる。Another example is an oligomeric molecule of thiophene. 5 and 6 are a drain electrode and a source electrode, respectively. Gold was used for the gate electrode and aluminum was used for the drain electrode and the source electrode. The channel length was 12 μm.
The size of the microcrystal grains of the oligomer layer is controlled by the length of the oligomer forming the oligomer layer and the vapor deposition conditions. maximum~
A field effect mobility of 0.1 cm 2 V −1 s −1 was obtained. The on / off current ratio is a good result of about 7 digits. In the case of a thiophene oligomer, since the grain size is as small as 0.1 μm, hopping conduction is performed at a crystal grain boundary in the film, which is smaller than the channel length.
【００１８】一方、フェニレンスルフィドのオリゴマ膜
はグレインサイズが数μｍ程度にまでなり、結晶中の分
子鎖間伝導が電荷輸送のメカニズムの主となる。従っ
て、粒界でのホッピングがないため移動度が著しく増加
する。また蒸着条件によって分子の配向が制御され、基
板面に対して分子の長軸(ｃ軸)が垂直になるようにでき
る。具体的には、蒸着速度を小さく基板温度を高くする
ことである。この分子配向の時、膜中の電荷はｃ軸に直
交する方向により良く輸送される。On the other hand, the phenylene sulfide oligomer film has a grain size of about several μm, and conduction between molecular chains in the crystal is the main charge transport mechanism. Therefore, there is no hopping at the grain boundary, so that the mobility is significantly increased. In addition, the orientation of the molecules is controlled by the evaporation conditions, and the major axis (c-axis) of the molecules can be perpendicular to the substrate surface. Specifically, it is to reduce the deposition rate and increase the substrate temperature. In this molecular orientation, the charges in the film are better transported in the direction perpendicular to the c-axis.
【００１９】これは隣接分子間で相対するベンゼン環と
の間の軌道重なりが最も大きいためである。この時、フ
ェニレンスルフィドの分子間距離はおよそ５オングスト
ロームである。トランジスタの構成から、ドレイン電極
とソース電極との間に印加される電圧によって、オリゴ
マ分子にとってｃ軸に直交する方向に電荷移動が起こる
ことになる。また、荷輸送が容易になることから、トラ
ンジスタのスイッチングに必要なゲート電圧も低下す
る。ゲート電圧に対するドレイン電流の特性向上は、上
記の微結晶粒の増大と配向性の向上とにある。This is because the orbital overlap between the adjacent molecules and the adjacent benzene ring is the largest. At this time, the intermolecular distance of phenylene sulfide is about 5 angstroms. Due to the structure of the transistor, charge transfer occurs in a direction orthogonal to the c-axis for the oligomer molecule due to a voltage applied between the drain electrode and the source electrode. In addition, the gate voltage required for switching of the transistor is also reduced because the load is easily transported. The improvement of the characteristics of the drain current with respect to the gate voltage lies in the above-mentioned increase in the size of the fine crystal grains and the improvement in the orientation.
【００２０】またゲート絶縁膜と活性半導体層である有
機薄膜層の間のトラップによる局斉準位を減少させるこ
とも重要である。ゲート絶縁膜として大画面に対応可能
で、緻密な膜で且つ表面が安定な上記シロキサン結合を
主鎖に持つポリオルガノシロキサンを用いた。他の例と
して活性半導体層に（化６）のフェニレンスルフィドオ
リゴマ分子を含んだポリイミド高分子を形成した。It is also important to reduce the local level due to traps between the gate insulating film and the organic thin film layer as the active semiconductor layer. As the gate insulating film, a polyorganosiloxane having a siloxane bond as a main chain, which is a dense film capable of supporting a large screen and having a stable surface, is used. As another example, a polyimide polymer containing a phenylene sulfide oligomer molecule of Chemical Formula 6 was formed on the active semiconductor layer.
【００２１】[0021]
【化６】 Embedded image
【００２２】形成方法は（化７）のジアミンのオリゴマ
分子と（化８）ベンゾフェノンテトラカルボン酸の２種
類の材料を２源蒸着による蒸着重合法によった。The formation was carried out by a vapor deposition polymerization method using two-source vapor deposition of two kinds of materials of a diamine oligomer molecule of the formula (7) and benzophenonetetracarboxylic acid.
【００２３】[0023]
【化７】 Embedded image
【００２４】[0024]
【化８】 Embedded image
【００２５】形成された有機薄膜層は、基板面に対して
垂直に分子鎖が並び、微結晶粒も数μｍ程度となった。
分子間距離は前記（化５）に比べて若干小さくなり、よ
り高い移動度に寄与している。これは、結晶内の電荷輸
送が隣接する分子間の伝導となるので、分子間距離が短
くなるに従って分子軌道重なりが大きくなって、移動度
が増加するためである。その結果、（化６）の高分子を
活性半導体層とすることで、最大〜0.3cm2V-1s-1の電界
効果移動度と電流のオン／オフ比７桁を得た。In the formed organic thin film layer, the molecular chains were arranged perpendicular to the substrate surface, and the fine crystal grains were about several μm.
The intermolecular distance is slightly smaller than in the above (Chem. 5), and contributes to higher mobility. This is because charge transport in the crystal becomes conduction between adjacent molecules, and as the intermolecular distance becomes shorter, the molecular orbital overlap increases and the mobility increases. As a result, by using the polymer of formula (6) as the active semiconductor layer, a field effect mobility of up to 0.3 cm 2 V −1 s −1 and an on / off ratio of current of 7 digits were obtained.
【００２６】（実施の形態２）図２は逆スタガー構造の
有機薄膜トランジスタの断面を示す。図１と異なるのは
活性半導体層４の有機薄膜とドレイン電極６およびソー
ス電極５の間に電荷輸送層７があることである。電荷輸
送層７の導入によって電荷注入の障壁が少なくなること
でドレイン電圧の低下とオン電流の増加が得られる。用
いた電荷輸送材料は正孔輸送層としては（化９）トリフ
ェニルジアミン、電子輸送層としては（化１０）オキサ
ジアゾールである。(Embodiment 2) FIG. 2 shows a cross section of an organic thin film transistor having an inverted stagger structure. The difference from FIG. 1 is that a charge transport layer 7 is provided between the organic thin film of the active semiconductor layer 4 and the drain electrode 6 and the source electrode 5. The introduction of the charge transport layer 7 reduces the barrier for charge injection, thereby lowering the drain voltage and increasing the on-current. The charge transporting materials used were (phenyl) diamine for the hole transport layer and oxadiazole for the electron transport layer.
【００２７】[0027]
【化９】 Embedded image
【００２８】[0028]
【化１０】 Embedded image
【００２９】中でも（化９）トリフェニルジアミンを用
いるとドレイン電圧１０Ｖで従来のドレイン電圧１００
Ｖと同じオン電流が得られた。When triphenyldiamine is used, the drain voltage is 10 V and the conventional drain voltage is 100 V.
The same on-current as V was obtained.
【００３０】（実施の形態３）図３は逆スタガー構造の
有機薄膜トランジスタと有機絶縁性薄膜からなる静電容
量を構成する蓄積容量電極を持つ液晶素子の断面図であ
る。ガラス基板１上にトランジスタを構成するゲート電
極２、ゲート絶縁膜３、実施の形態１で示した有機薄膜
の半導体層４と実施の形態２で示した電荷輸送層７、ド
レイン電極５、ソース電極６、透明な画素電極８が形成
される。更に蓄積容量を形成するための蓄積容量電極９
と11、有機絶縁性薄膜10を設ける。液晶を配向させるた
めの配向膜12を全面に設ける。対向基板１は透明電極13
が全面に形成される。液晶層14は両基板の配向膜12によ
って配向される。この構造においてゲート絶縁膜３と有
機絶縁性薄膜１０を塗布形成可能なシロキサン結合を主
鎖に持つポリオルガノシロキサンとすることで、大画面
の基板に対応できる。具体的なプロセスを説明する。(Embodiment 3) FIG. 3 is a cross-sectional view of a liquid crystal element having a storage capacitor electrode constituting an electrostatic capacitance composed of an organic thin film transistor having an inverted stagger structure and an organic insulating thin film. A gate electrode 2, a gate insulating film 3, a semiconductor layer 4 of an organic thin film described in Embodiment 1 and a charge transport layer 7, a drain electrode 5, and a source electrode described in Embodiment 2 on a glass substrate 1. 6. A transparent pixel electrode 8 is formed. Further, a storage capacitor electrode 9 for forming a storage capacitor
And 11, an organic insulating thin film 10 is provided. An alignment film 12 for aligning liquid crystal is provided on the entire surface. The opposing substrate 1 has a transparent electrode 13
Are formed on the entire surface. The liquid crystal layer 14 is aligned by the alignment films 12 of both substrates. In this structure, a polyorganosiloxane having a siloxane bond in the main chain capable of coating and forming the gate insulating film 3 and the organic insulating thin film 10 can be used for a large-screen substrate. A specific process will be described.
【００３１】（１）対角２５インチ（縦横比４：３）の
ガラス基板１上に画素電極８としてインジウム・チタン
・酸化物（ＩＴＯ）をスパッタ法によって形成し、正方
配列で画素電極８をパターン形成する。画素ピッチは横
方向に２００μｍとして画素数は８００×３＝２４００
個、縦方向には６２０μｍとして画素数は６００個並
べ、全画素数を１４４万画素形成した。これはカラーＳ
ＶＧＡクラスの表示画素である。更にゲート電極２と蓄
積容量電極９としてクロム電極をスパッタ法で成膜しパ
ターン形成する。(1) Indium / titanium / oxide (ITO) is formed as a pixel electrode 8 on a glass substrate 1 having a diagonal width of 25 inches (aspect ratio 4: 3) by sputtering, and the pixel electrodes 8 are arranged in a square array. Form a pattern. The pixel pitch is 200 μm in the horizontal direction, and the number of pixels is 800 × 3 = 2400.
The number of pixels was set to 620 μm in the vertical direction, the number of pixels was arranged 600, and the total number of pixels was 1.44 million. This is color S
It is a VGA class display pixel. Further, a chromium electrode is formed as a gate electrode 2 and a storage capacitor electrode 9 by sputtering to form a pattern.
【００３２】（２）全面にポリオルガノシロキサンを塗
布、乾燥した後、４００度で加熱硬化させる。その後フ
ォトリソグラフ工程によってゲート絶縁膜３と有機絶縁
性薄膜10を設ける。(2) A polyorganosiloxane is applied to the entire surface, dried, and then cured by heating at 400 degrees. Thereafter, the gate insulating film 3 and the organic insulating thin film 10 are provided by a photolithographic process.
【００３３】（３）真空蒸着法(基板温度１５０度)によ
って（化５）のフェニレンスルフィド（重合度５）のオ
リゴマ膜を１０００オングストローム形成する。続けて
（化９）に示すトリフェニルジアミンで電荷輸送層６を
同じく真空蒸着で形成する。(3) A phenylene sulfide (polymerization degree 5) oligomer film of the formula (5) is formed to a thickness of 1000 angstroms by a vacuum deposition method (substrate temperature 150 ° C.). Subsequently, the charge transport layer 6 is formed of triphenyldiamine shown in Chemical Formula 9 by vacuum deposition.
【００３４】（４）ドレイン電極５、ソース電極６及び
蓄積容量電極１１をアルミニウムで同時に成膜、パター
ン形成する。(4) The drain electrode 5, the source electrode 6, and the storage capacitor electrode 11 are simultaneously formed of aluminum and patterned.
【００３５】（５）全面をポリミドの配向膜で覆う。 （６）液晶素子の対向基板となるＩＴＯ１３付きガラス
基板１上に配向膜１２を塗布し、トランジスタの構成さ
れた基板とをそれぞれラビング処理する。この１組の基
板をビーズを介して接着し、真空注入装置によって液晶
１４を注入し、封じすることで素子が完成する。(5) The entire surface is covered with a polyimide alignment film. (6) An alignment film 12 is applied on a glass substrate 1 with ITO 13 which is a counter substrate of a liquid crystal element, and a rubbing process is performed on each of the substrates on which transistors are formed. This set of substrates is bonded via beads, and the liquid crystal 14 is injected by a vacuum injection device and sealed, thereby completing the element.
【００３６】液晶表示モードは用いる液晶材料と配向膜
材料で決まる。１例としてツイストネマチックモードと
他の例として垂直配向モードの素子を、それぞれ作製し
た。前者のツイストネマチックモードには正の誘電異方
性を持つネマチック液晶とプレチルト角〜２度のポリイ
ミド配向膜を使った。後者の垂直配向モードには負の誘
電異方性を持つネマチック液晶とプレチルト角８７度の
ポリイミド配向膜を使った。各々の素子でのドレイン駆
動電圧は、前者が５Ｖで後者が７Ｖである。視野角依存
性を評価したところコントラスト１００を維持する角度
が前者が上下２０度に対して、後者が上下６０度と後者
の方が優れている。対角２５インチの大型液晶パネルの
ＳＶＧＡフルカラー表示を実現した。The liquid crystal display mode is determined by the liquid crystal material used and the alignment film material. As an example, a twisted nematic mode device and as another example, a vertical alignment mode device were produced. For the former twisted nematic mode, a nematic liquid crystal having a positive dielectric anisotropy and a polyimide alignment film having a pretilt angle of about 2 degrees were used. In the latter vertical alignment mode, a nematic liquid crystal having a negative dielectric anisotropy and a polyimide alignment film having a pretilt angle of 87 degrees were used. The drain drive voltage of each element is 5 V for the former and 7 V for the latter. When the viewing angle dependence was evaluated, the angle at which the contrast was maintained at 100 was superior in the former case, that is, 20 degrees in the upper and lower directions, and 60 degrees in the upper and lower directions. SVGA full-color display on a large 25 inch diagonal liquid crystal panel has been realized.
【００３７】（実施の形態４）図４に透明な共通電極13
が被覆された透明基板１上に有機薄膜からなる電界発光
層15、及び正孔輸送層16が積層され、その上にマトリッ
クス状に分離された画素電極17があり、各画素電極17上
には、ソース電極６を介して有機薄膜トランジスタが配
置される有機発光素子の断面図を示した。発光面の開口
率は、発光面をトランジスタの大きさに依存せずに配置
することができるために高い。また層間絶縁層18は平坦
化層としての働きもあり、図５に示すフルカラー素子を
構成する場合、各画素上の有機薄膜トランジスタは平坦
な層の上に構成することができる。具体的な製造方法を
説明する。(Embodiment 4) FIG. 4 shows a transparent common electrode 13.
An electroluminescent layer 15 made of an organic thin film and a hole transport layer 16 are laminated on a transparent substrate 1 covered with a layer, and pixel electrodes 17 separated in a matrix are provided thereon. 1 is a cross-sectional view of an organic light emitting device in which an organic thin film transistor is arranged via a source electrode 6. The aperture ratio of the light emitting surface is high because the light emitting surface can be arranged without depending on the size of the transistor. Further, the interlayer insulating layer 18 also functions as a flattening layer, and when forming the full-color element shown in FIG. 5, the organic thin film transistor on each pixel can be formed on a flat layer. A specific manufacturing method will be described.
【００３８】（１）対角２５インチ（縦横比４：３）の
ガラス基板１上に全面をスパッタ法により透明電極１３
としてＩＴＯを１０００オングストローム成膜する。こ
の基板を真空蒸着装置に設置し、有機発光層１５と電荷
輸送層１６を連続成膜する。それぞれ代表例として（化
１１）アルミニウムキノリンを１００オングストローム
及び（化９）トリフェニルジアミンを１０００オングス
トロームとした。(1) A transparent electrode 13 is formed on the entire surface of a glass substrate 1 having a diagonal width of 25 inches (aspect ratio 4: 3) by sputtering.
1000 Å of ITO is formed. This substrate is set in a vacuum evaporation apparatus, and an organic light emitting layer 15 and a charge transport layer 16 are continuously formed. As typical examples, (chemical formula 11) aluminum quinoline was 100 angstroms and (chemical formula 9) triphenyldiamine was 1000 angstroms.
【００３９】[0039]
【化１１】 Embedded image
【００４０】（２）画素電極１７を電子ビーム蒸着法あ
るいはスパッタ法によってアルミニウム１０００オング
ストローム成膜する。マトリックス状に分離するために
は、成膜時にマスクするか、全面に成膜後フォトリソグ
ラフィによって分離するかはいずれの方法でもよい。画
素ピッチは横方向に２００μｍとして画素数は８００×
３＝２４００個、縦方向には６２０μｍとして画素数６
００個並べ、全画素数を１４４万画素形成した。これは
カラーＳＶＧＡの表示画素である。画素の開口率は８０
％以上である。(2) A 1000 Å aluminum film is formed on the pixel electrode 17 by electron beam evaporation or sputtering. In order to separate them in a matrix, either masking during film formation or separation by photolithography after film formation over the entire surface may be used. The pixel pitch is 200 μm in the horizontal direction and the number of pixels is 800 ×
3 = 2400, 620 μm in the vertical direction, 6 pixels
00 pixels were arranged to form a total of 1.44 million pixels. This is a display pixel of the color SVGA. Pixel aperture ratio is 80
% Or more.
【００４１】（３）層間絶縁層18としてアクリル系のレ
ジストを用いて約２μｍ成膜する。フォトリソグラフィ
によって各画素電極とのコンタクトホールを形成する。
層間絶縁膜１８上にフォトリソグラフィによってゲート
電極２を形成し、更に良質なゲート絶縁膜３としてＣＶ
Ｄ法によるシリコン酸化膜と、他に塗布形成可能なシロ
キサン結合を主鎖に持つポリオルガノシロキサンの２方
法で形成した。(3) A film of about 2 μm is formed as an interlayer insulating layer 18 using an acrylic resist. A contact hole with each pixel electrode is formed by photolithography.
A gate electrode 2 is formed on the interlayer insulating film 18 by photolithography.
It was formed by two methods: a silicon oxide film by Method D, and a polyorganosiloxane having a siloxane bond in its main chain which can be formed by coating.
【００４２】（４）活性半導体層４として真空蒸着法
（基板温度１５０度）によって、（化５）のフェニレン
スルフィド（重合度５）のオリゴマ膜を１０００オング
ストローム形成する。続けて（化９）に示す電荷輸送層
７を、同じく真空蒸着で形成する。この形成方法は実施
の形態３と同様である。(4) As the active semiconductor layer 4, an oligomer film of phenylene sulfide (degree of polymerization: 5) of 1000 Å is formed by a vacuum evaporation method (substrate temperature: 150 ° C.). Subsequently, the charge transport layer 7 shown in (Chem. 9) is similarly formed by vacuum evaporation. This forming method is the same as in the third embodiment.
【００４３】（５）ドレイン電極５、ソース電極６をア
ルミニウムで同時に成膜、パターン形成する。最後に全
面をパシベーション膜１９で覆う。(5) The drain electrode 5 and the source electrode 6 are simultaneously formed of aluminum and patterned. Finally, the entire surface is covered with a passivation film 19.
【００４４】このようにして製造した有機トランジスタ
駆動によるアクティブ型の有機発光素子は、ドレイン駆
動電圧１０Ｖ、ゲート電圧１０Ｖで発光輝度１万cd/ｍ2
と明るい。また、動画表示も可能である。さらに、図５
に示すカラー表示対応の素子を作製するため、有機発光
層を赤色発光層２０（材料は（化１２）のペリレンー
４）、緑色発光層２１（材料は（化１１）のアルミニウ
ムキノリン）、青色発光層２２（材料は（化１３）のテ
トラフェニルブタジエン）をストライプ状に並べて形成
する。The active organic light emitting device driven by the organic transistor manufactured in this manner has a luminance of 10,000 cd / m 2 at a drain drive voltage of 10 V and a gate voltage of 10 V.
And bright. In addition, moving images can be displayed. Further, FIG.
In order to produce an element corresponding to color display shown in (1), the organic light emitting layer was composed of a red light emitting layer 20 (material is perylene-4 of (Chem. 12)), a green light emitting layer 21 (material was aluminum quinoline of (Chem. 11)), and blue light emission. The layer 22 (the material is tetraphenylbutadiene of Chemical Formula 13) is formed in a stripe shape.
【００４５】[0045]
【化１２】 Embedded image
【００４６】[0046]
【化１３】 Embedded image
【００４７】電荷輸送層１６は共通とできる。その他は
単色素子の工程と同じである。このカラー素子をドレイ
ン駆動電圧１０Ｖ、ゲート電圧１０Ｖで動画表示したと
ころ、発光輝度5000cd／ｍ2と明るく応答速度も１msec
以下と良好な特性を得た。The charge transport layer 16 can be common. The other steps are the same as those of the single color element. When this color element was displayed as a moving image with a drain drive voltage of 10 V and a gate voltage of 10 V, the light emission luminance was 5000 cd / m 2 and the response speed was 1 msec.
The following favorable characteristics were obtained.
【００４８】実施の形態３と同じ２５インチの大画面素
子を発光素子で実現できた。なお、以上の実施の形態１
から４の説明は有機トランジスタの構成を逆スタガ型の
例を説明したが、プレーナ型についても同様に実施可能
である。The same 25-inch large screen element as in the third embodiment can be realized by the light emitting element. The first embodiment described above
In the description of (1) to (4), the configuration of the organic transistor is described as an example of an inverted staggered type, but a planar type can be similarly implemented.
【００４９】[0049]
【発明の効果】以上のように本発明によれば、高移動度
を持つ有機トランジスタをスイッチング素子として組み
込むことで大面積の液晶表示素子あるいは有機発光素子
が実現できる。As described above, according to the present invention, a large-area liquid crystal display element or organic light-emitting element can be realized by incorporating an organic transistor having high mobility as a switching element.
【図１】本発明の実施の形態１による有機薄膜トランジ
スタを示す断面図FIG. 1 is a sectional view showing an organic thin film transistor according to a first embodiment of the present invention.
【図２】本発明の実施の形態２による電荷輸送層を持つ
有機薄膜トランジスタを示す断面図FIG. 2 is a sectional view showing an organic thin film transistor having a charge transport layer according to a second embodiment of the present invention.
【図３】本発明の実施の形態３による有機薄膜トランジ
スタを持つ液晶素子の断面図FIG. 3 is a sectional view of a liquid crystal device having an organic thin film transistor according to a third embodiment of the present invention.
【図４】本発明の実施の形態４による有機薄膜トランジ
スタを持つ単色有機発光素子の断面図FIG. 4 is a sectional view of a monochromatic organic light emitting device having an organic thin film transistor according to a fourth embodiment of the present invention.
【図５】本実施の形態による有機薄膜トランジスタを持
つフルカラー有機発光素子の断面図FIG. 5 is a cross-sectional view of a full-color organic light-emitting device having an organic thin-film transistor according to the present embodiment.
１ 透明絶縁性基板 ２ ゲート電極 ３ ゲート絶縁膜 ４ 有機薄膜（活性半導体層） ５ ドレイン電極 ６ ソース電極 ７ 電荷輸送層 ８ 画素電極 ９ 蓄積容量電極 １０ 有機絶縁性薄膜 １１ 蓄積容量電極 １２ 配向膜 １３ 透明電極 １４ 液晶層 １５ 電界発光層 １６ 正孔輸送層 １７ 画素電極 １８ 層間絶縁膜 １９ パシベーション膜 ２０ 赤色発光層 ２１ 緑色発光層 ２２ 青色発光層 Reference Signs List 1 transparent insulating substrate 2 gate electrode 3 gate insulating film 4 organic thin film (active semiconductor layer) 5 drain electrode 6 source electrode 7 charge transport layer 8 pixel electrode 9 storage capacitor electrode 10 organic insulating thin film 11 storage capacitor electrode 12 alignment film 13 Transparent electrode 14 Liquid crystal layer 15 Electroluminescent layer 16 Hole transport layer 17 Pixel electrode 18 Interlayer insulating film 19 Passivation film 20 Red light emitting layer 21 Green light emitting layer 22 Blue light emitting layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西山 和廣 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazuhiro Nishiyama 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (9)
ン電極の３端子及び活性半導体層からなる薄膜トランジ
スタにおいて、前記活性半導体層が繰り返し単位を持つ
有機物であり、その繰り返し単位が５以上のオリゴマ分
子であることを特徴とする有機薄膜トランジスタ。1. A thin film transistor comprising a gate electrode, a source electrode, a drain electrode and three terminals on a substrate and an active semiconductor layer, wherein the active semiconductor layer is an organic substance having a repeating unit, and the number of the repeating units is 5 or more. An organic thin film transistor characterized by the following.
ン電極の３端子及び活性半導体層からなる薄膜トランジ
スタにおいて、前記活性半導体層が繰り返し単位を持つ
有機物であり、その繰り返し単位が（化１）で現される
オリゴマ分子であることを特徴とする請求項１記載の有
機薄膜トランジスタ。 【化１】 2. A thin film transistor comprising three terminals of a gate electrode, a source electrode, a drain electrode and an active semiconductor layer on a substrate, wherein the active semiconductor layer is an organic substance having a repeating unit, and the repeating unit is represented by the following chemical formula (1). 2. The organic thin-film transistor according to claim 1, wherein the organic thin-film transistor is an oligomer molecule. Embedded image
ン電極の３端子及び活性半導体層からなる薄膜トランジ
スタにおいて、前記活性半導体層が繰り返し単位を持つ
有機物であり、その繰り返し単位が（化１）で表される
オリゴマ分子を持つ（化２）で表される高分子であるこ
とを特徴とする請求項１記載の有機薄膜トランジスタ。 【化２】 3. A thin film transistor comprising three terminals of a gate electrode, a source electrode, a drain electrode and an active semiconductor layer on a substrate, wherein the active semiconductor layer is an organic substance having a repeating unit, and the repeating unit is represented by the following chemical formula (1). 2. The organic thin-film transistor according to claim 1, wherein the organic thin-film transistor is a polymer represented by (Chemical Formula 2) having the represented oligomer molecule. Embedded image
ン電極の３端子及び活性半導体層からなる薄膜トランジ
スタにおいて、前記活性半導体層が有機物からなり、ソ
ース電極及びドレイン電極と前記活性半導体層の間に有
機物からなる電子輸送層あるいは正孔輸送層を有するこ
とを特徴とする有機薄膜トランジスタ。4. A thin film transistor comprising a gate electrode, a source electrode, a drain electrode, and three terminals on a substrate and an active semiconductor layer, wherein the active semiconductor layer is made of an organic substance, and is provided between the source electrode and the drain electrode and the active semiconductor layer. An organic thin-film transistor having an electron transport layer or a hole transport layer made of an organic substance.
ン電極の３端子及び活性半導体層からなる薄膜トランジ
スタにおいて、前記活性半導体層が有機物からなり、ソ
ース電極及びドレイン電極と前記活性半導体層の間に
（化３）で表される電子輸送層あるいは（化４）で表さ
れる正孔輸送層を有することを特徴とする請求項４記載
の有機薄膜トランジスタ。 【化３】 【化４】 5. A thin film transistor comprising three terminals of a gate electrode, a source electrode, a drain electrode, and an active semiconductor layer on a substrate, wherein the active semiconductor layer is made of an organic material, and is provided between the source electrode and the drain electrode and the active semiconductor layer. The organic thin film transistor according to claim 4, comprising an electron transporting layer represented by (Chem. 3) or a hole transporting layer represented by (Chem. 4). Embedded image Embedded image
膜トランジスタと、そのソース電極に接続する画素電極
と、そのドレイン電極に接続するデータバスと、そのゲ
ート電極に接続し、前記データバスに垂直に配置される
スキャンバスを有し、この基板と一定間隔をもって設け
られた透明電極を被覆された透明基板が液晶層を介し、
この透明電極と、前記画素電極あるいは前記ソース電極
との間に有機絶縁性薄膜からなる静電容量を構成する蓄
積容量電極を有することを特徴とする液晶素子。6. An organic thin-film transistor arranged in a matrix on a substrate, a pixel electrode connected to its source electrode, a data bus connected to its drain electrode, and a data bus connected to its gate electrode and perpendicular to said data bus. Has a scan bus, a transparent substrate coated with a transparent electrode provided at a constant interval from this substrate via a liquid crystal layer,
A liquid crystal device comprising a storage capacitor electrode constituting a capacitance made of an organic insulating thin film between the transparent electrode and the pixel electrode or the source electrode.
膜トランジスタと、そのソース電極に接続する画素電極
と、そのドレイン電極に接続するデータバスと、そのゲ
ート電極に接続し、前記データバスに垂直に配置される
スキャンバスを有し、この基板と一定間隔をもって設け
られた透明電極を被覆された透明基板が液晶層を介し、
液晶が負の誘電異方性を有し、垂直配向することを特徴
とする液晶素子。7. An organic thin-film transistor arranged in a matrix on a substrate, a pixel electrode connected to its source electrode, a data bus connected to its drain electrode, and a data bus connected to its gate electrode and perpendicular to said data bus. Has a scan bus, a transparent substrate coated with a transparent electrode provided at a constant interval from this substrate via a liquid crystal layer,
A liquid crystal device, wherein the liquid crystal has a negative dielectric anisotropy and is vertically aligned.
有機薄膜からなる電界発光層、及び正孔輸送層が積層さ
れ、その上にマトリックス状に分離された画素電極があ
り、各画素電極上には、ソース電極を介して有機薄膜ト
ランジスタが配置されることを特徴とする有機発光素
子。8. An electroluminescent layer composed of an organic thin film and a hole transport layer are laminated on a transparent substrate covered with a transparent common electrode, and a pixel electrode separated in a matrix is formed on the electroluminescent layer. An organic light emitting device, wherein an organic thin film transistor is disposed on the electrode via a source electrode.
有機薄膜からなる電界発光層、及び正孔輸送層が積層さ
れ、その上にマトリックス状に分離された画素電極があ
り、画素電極上には有機樹脂からなる平坦化層を有し、
各画素電極は平坦化層の一部に設けられたコンタクトホ
ールを介してソース電極と結合する有機薄膜トランジス
タが配置される有機発光素子。9. An electroluminescent layer composed of an organic thin film and a hole transport layer are laminated on a transparent substrate covered with a transparent common electrode, and a pixel electrode separated in a matrix is formed on the electroluminescent layer. There is a flattening layer made of organic resin on the top,
An organic light emitting device in which each pixel electrode is provided with an organic thin film transistor which is coupled to a source electrode via a contact hole provided in a part of the planarization layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27440196A JP4085438B2 (en) | 1996-10-17 | 1996-10-17 | Organic thin film transistor, liquid crystal device and organic light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27440196A JP4085438B2 (en) | 1996-10-17 | 1996-10-17 | Organic thin film transistor, liquid crystal device and organic light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10125924A true JPH10125924A (en) | 1998-05-15 |
| JP4085438B2 JP4085438B2 (en) | 2008-05-14 |
Family
ID=17541161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27440196A Expired - Lifetime JP4085438B2 (en) | 1996-10-17 | 1996-10-17 | Organic thin film transistor, liquid crystal device and organic light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4085438B2 (en) |
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| JP5677306B2 (en) * | 2009-09-25 | 2015-02-25 | 出光興産株式会社 | Organic thin film transistor |
| JP2015109455A (en) * | 2009-09-25 | 2015-06-11 | 出光興産株式会社 | Organic thin film transistor |
| US9011729B2 (en) | 2010-04-22 | 2015-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin-film transistor |
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