KR20050011124A - Method Of Forming Organic Semiconductor Pattern And Method Of Manufacturing Organic Thin Film Transistor Using The Same - Google Patents

Abstract

PURPOSE: A method of forming a semiconductor pattern and a method of manufacturing a TFT(Thin Film Transistor) using the same are provided to simplify manufacturing processes and to form easily a flexible display device by using an organic semiconductor material for the semiconductor pattern instead of conventional amorphous silicon. CONSTITUTION: A negative pattern is formed on a first substrate(S10). An adhesive is attached on the negative pattern(S20). An organic semiconductor material layer is formed on a second substrate(S30). A positive organic semiconductor material pattern is formed on the second substrate by removing selectively the organic semiconductor material layer using the adhesive on the negative pattern(S40,S50).

Description

Method of Forming Organic Semiconductor Pattern and Manufacturing Method of Organic Thin Film Transistor Using the Same {Method Of Forming Organic Semiconductor Pattern And Method Of Manufacturing Organic Thin Film Transistor Using The Same}

The present invention relates to a method of forming an organic semiconductor pattern and a method of manufacturing an organic thin film transistor using the same, and more particularly, to an easy pattern forming method capable of patterning without using a shadow mask and a method of manufacturing an organic thin film transistor using the same. It is about.

Recently, various flat panel display devices that can reduce weight and volume, which are disadvantages of cathode ray tubes, have been developed. Such flat panel displays include liquid crystal displays (LCDs), field emission displays (FEDs), plasma display panels (PDPs), electroluminescence displays (electro-luminescence displays). And EL). In order to improve the display quality of such a flat panel display device and to attempt to make a large screen, studies are being actively conducted.

Among them, PDP is attracting attention as a display device which is light and small and is most advantageous for large screen because of its simple structure and manufacturing process, but has the disadvantage of low luminous efficiency, low luminance and high power consumption. On the other hand, active matrix LCDs in which thin film transistors (TFTs) are applied as switching elements have difficulty in large screens because they use a semiconductor process, but demand is increasing as they are mainly used as display elements of notebook computers. In addition, LCD has a disadvantage of high power consumption due to the backlight unit. In addition, LCDs have disadvantages of high light loss and a narrow viewing angle due to optical elements such as polarizing filters, prism sheets, and diffusion plates. In contrast, EL display elements are classified into inorganic ELs and organic ELs depending on the material of the light emitting layer. The EL display elements are self-luminous elements that emit light by themselves and have advantages such as fast response speed and high luminous efficiency, luminance, and viewing angle.

The trend of the future information society for the various display devices described above is a new market called paper-like flexible display, which can pursue convenience with high performance of display quality in the mobile domain. In order to implement such a flexible display, in the development of an active driving device array, it is required to easily apply a low cost process and to have excellent flexibility and durability of the device. Examples of the device having such a requirement include an organic semiconductor device. Organic semiconductor materials currently being studied include poly (phenylenes), end-substituted thiophene oligomers, pentacene, phthalocyanine, and regioregular poly (3). -Alkylthiophene) (regioregular poly (3-alkylthiophene) s) and the like.

One important field in the development of flexible displays is the patterning process using the organic semiconductor material. After the development of polyacetylene, a conjugated organic polymer that exhibits semiconductor characteristics, organic semiconductors are new electric and electronic materials due to the characteristics of organic materials, such as various methods of synthesis, easy molding into fibers or films, flexibility, conductivity, and low production cost. Active research is being conducted in a wide range of fields such as functional electronic devices and optical devices.

Among the devices using such a conductive polymer, research on organic TFT (OTFT) using organic material as an active layer has been started since 1980, and recently, many studies are underway in the world. The OTFT is structurally almost the same as Si-TFT, and there is a difference in that an organic material is used in place of Si in the semiconductor region. However, the manufacturing process has the advantage of being simpler and cheaper than Si-TFT. As such, replacing inorganic materials with inexpensive organic compounds is of great interest at present. Many π-conjugated organic materials have been used as active layers in TFTs, but these materials have poor electrical performance and are difficult to manufacture in mass production processes or due to insufficient resistance to attack of oxygen and water in the atmosphere It is known to have problems such as shortening the life of the apparatus.

Processes using organic semiconductor materials can be broadly classified into two fields, a polymer semiconductor process and an organic semiconductor process. The polymer semiconductor process uses a polymer as a semiconductor material, and is a technique of dissolving a polymer material in a solvent and then applying a spin coating or the like onto a substrate, and then evaporating the solvent and patterning the same. In contrast, the organic semiconductor process is a process using a low molecular weight organic material rather than a polymer, so far there is no solvent that can easily dissolve the applicable material. Pentacene is mentioned as a typical organic substance. Pentacene is a small aromatic hydrocarbon material with five benzene rings as shown in FIG. 1. In this structure, pentacene molecules having double and single bonds are continuously connected, and the movement of electrons in the molecule is very fast, but the intermolecular movement is composed of electron hopping, so the close-packing of molecules This will directly affect the mobility of the carrier. Pentacene provides very high field effect mobility, but this is only reported when deposited under high vacuum (Syn. Metals, 41-43, 1991, p1127). Soluble precursors have also been reported for substituted pentacenes that enable liquid processing. However, the performance is much lower than the deposited pattern, and after applying this material in a liquid process to form an active layer, it is necessary to heat it to a relatively high temperature (140 to 180 ° C.) under vacuum.

As a result, the process for applying such an organic semiconductor material onto a substrate is limited to evaporation via a shadow mask. This method has the advantage of not having to perform the photolithography process of the semiconductor process, but has a number of disadvantages of using a shadow mask.

In other words, the shadow mask has to be very thin in order to form a fine pattern, and thus it is difficult to handle it, and the shadow mask is repeatedly adhered to the substrate to be deposited for the formation of the pattern during deposition of the organic semiconductor material. The use of phosphorus is limited to several times. In addition, there is a lighting that requires a cleaning operation every time in order to form a precise deposition pattern. First of all, shadow masks for large substrates are not easy to respond and are very expensive, so they do not meet the intent of low cost process.

The general patterning method of the organic semiconductor material using the shadow mask described above will be described in more detail with an example of forming an organic semiconductor pattern on a transparent anode electrode in a vacuum deposition process by a conventional resistance heating method.

2 is a schematic perspective view illustrating a deposition process using a conventional shadow mask.

Referring to FIG. 2, the vacuum deposition apparatus includes a vacuum chamber 15, a heating container 12 installed inside the vacuum chamber 15 and containing an organic material 10 therein, and a transparent anode electrode 2. The glass substrate 1 and the shadow mask 13 provided so that the heating container 12 and the glass substrate 1 may face each other with the distance difference are provided. This shadow mask 13 is fixed to the holder 17 and mounted to the deposition apparatus.

The vacuum chamber 15 is in a vacuum state so that foreign matter does not flow from the outside, and the pressure inside is adjusted appropriately. The heating vessel 12 accommodates the organic material at the bottom of the vacuum chamber 15 and has an opening at the upper side thereof, and receives the organic material 10 in the opening. The heating vessel 12 is also enclosed with a resistor 18 for sublimating the contained organic material 10. The resistor 18 heats the heating vessel 12 by the flowing voltage.

On the glass substrate 1, the anode electrode 2 which is a transparent electrode is formed. The shadow mask 13 serves to deposit the organic material 10 in a predetermined pattern on the anode electrode 2. The shadow mask 13 may have various shapes.

3 and 4 are perspective views illustrating the shape of a slot formed in the shadow mask shown in FIG.

As shown in FIG. 3, the shadow mask 13 may be formed by arranging slots 14 having a stripe shape at regular intervals. Such a shadow mask 13 allows the organic material 10 to be deposited in a stripe-shaped pixel arrangement on the glass substrate 1. In addition, as shown in FIG. 4, the shadow mask 13 pixel may be formed by arranging rectangular pixels in a matrix.

Referring to the deposition process of the organic material deposition apparatus, the organic material deposition apparatus heats the heating vessel 12 installed in the vacuum chamber 15 by the resistor 18. This is because the organic material 10 contained in the heating vessel 12 does not evaporate at room temperature but evaporates at a constant temperature of approximately 200 ° C. or more.

Accordingly, the organic material 20 evaporated in the heated heating vessel 12 is evaporated in a molecular or atomic state, and the slots 14 of the shadow mask 13 between the glass substrate 1 and the heating vessel 12. Only the organic material 10 passing through) is deposited on the anode electrode 2 of the relatively low temperature glass substrate 1. The pattern shape of the deposited organic material is determined by the slot shape of the shadow mask.

According to this deposition process, in addition to the above-described problems, there are the following problems. In order to evaporate the organic material 10 during the deposition process, the heating vessel 12 is heated in the vacuum chamber 15, and radiant energy of the heated heat is transferred to the shadow mask 13 to provide the shadow mask 13. The temperature of increases. Increasing the temperature of the shadow mask 13 causes the shadow mask 13 to thermally expand, causing the shadow mask 13 to sag downward due to the thermal expansion. This deflection phenomenon has a problem that the larger the screen area becomes larger.

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems caused by the above-described deposition process, and in a patterning method using a low molecular weight organic semiconductor material, it is possible to provide a method of patterning an organic semiconductor by a printing method without using a shadow mask. I would like to.

Another object of the present invention is to provide a method of manufacturing an organic thin film transistor which enables the production of a flexible display at low cost by applying the method of forming the organic semiconductor pattern described above.

It is still another object of the present invention to provide a method of manufacturing a display element comprising an organic thin film transistor manufactured by the above-described method and a display mechanism.

Still another object of the present invention is to provide an easy method for manufacturing a display element by applying the above-described method for forming an organic semiconductor pattern.

1 is a diagram showing the structural formula of pentacene.

2 is a schematic perspective view illustrating a deposition process using a conventional shadow mask.

3 and 4 are perspective views illustrating the shape of a slot formed in the shadow mask shown in FIG.

5 is a flowchart illustrating a method of forming an organic semiconductor pattern according to the present invention.

6A to 6F are cross-sectional views illustrating a method of forming an organic semiconductor pattern according to the present invention.

7 is a cross-sectional view schematically showing an organic thin film transistor manufactured according to the method of the present invention.

8 is a schematic cross-sectional view of a display device having a basic shape that can be manufactured by applying the method of forming an organic semiconductor pattern according to the present invention.

9 is a cross-sectional view of an active matrix organic light emitting display device to which the method of the present invention is applicable.

10 is a cross-sectional view of a liquid crystal display device to which the method of the present invention is applicable.

11 is a schematic cross-sectional view of a printable display device including an electrophoretic display layer to which the method of the present invention is applicable.

In the present invention to achieve the above object

Forming a negative pattern on the first substrate;

Attaching an adhesive component on the formed negative pattern;

Forming an organic semiconductor material layer on a second substrate on which an organic semiconductor pattern is to be formed; And

Bonding the first substrate and the second substrate to attach and remove the organic semiconductor material of the organic semiconductor material layer on the second substrate by means of a pressure-sensitive adhesive component on a negative pattern on the first substrate; It provides a method of forming.

In particular, the first substrate may be further cleaned by performing the step of cleaning the first substrate to which the pressure sensitive adhesive component and the organic semiconductor material are attached, and then attaching the pressure sensitive adhesive component to the formed negative pattern. Continuous use is possible.

At this time, the pressure-sensitive adhesive component can be removed through a washing step using water, a washing step using acetone, a washing step using ultrasonic waves, a washing step by a combination thereof, and the like.

Preferably, the pressure-sensitive adhesive component is a liquid, and the pressure-sensitive adhesive component is preferably attached onto a negative pattern by dipping the first substrate into a liquid pressure-sensitive adhesive component, wherein the organic semiconductor material is an organic semiconductor having no solvent dissolved therein. In the case of an organic semiconductor, the method of the present invention is easily applied.

In order to achieve the other object of the present invention described above in the present invention

In the method of manufacturing an organic thin film transistor comprising a gate electrode, an insulating film, a source / drain electrode and an organic active layer formed of an organic semiconductor material,

The organic active layer

Forming a negative pattern on the first substrate;

Attaching an adhesive component on the formed negative pattern;

Forming an organic semiconductor material layer on a second substrate on which an organic semiconductor pattern is to be formed; And

Bonding the first substrate and the second substrate to attach and remove the organic semiconductor material of the organic semiconductor material layer on the second substrate by means of a pressure-sensitive adhesive component on a negative pattern on the first substrate; It provides a method for producing an organic thin film transistor formed by the method of forming a.

In particular, the flexible device can be manufactured when the substrate is a flexible plastic.

Still another object of the present invention is achieved by a method of manufacturing a display device including an organic thin film transistor according to the above-described manufacturing method, which is an electro-luminescence (EL) device, a liquid crystal display (LCD) device, and an electric Examples of the electrophoretic printed display element may be mentioned.

According to the present invention, in manufacturing a flexible device using a low molecular weight organic semiconductor material, the process of depositing an organic semiconductor material through a shadow mask, which is an essential step in the prior art, is drastically improved and replaced by a printing process using an adhesive. The manufacturing process of the used flexible device can be improved by one step.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

5 is a flowchart illustrating a method of forming an organic semiconductor pattern according to the present invention, and FIGS. 6A to 6F are cross-sectional views illustrating the method.

First, referring to FIG. 5, a negative pattern is formed on the first substrate as opposed to the shape of the pattern to be formed on the second substrate (step S10). Then, the pressure-sensitive adhesive component is buried on the formed negative pattern (step S20). An organic semiconductor material layer is formed on the second substrate on which the organic semiconductor pattern is to be formed (step S30). The organic semiconductor material layer is preferably formed to have a uniform thickness by performing a front deposition process. Thereafter, the first substrate on which the pressure-sensitive adhesive component is deposited and the second substrate on which the organic semiconductor material layer is formed are attached to each other, and the organic semiconductor material of the organic semiconductor material layer is adhered to and removed by the pressure-sensitive adhesive component on the negative pattern on the first substrate. (Step S40). Through this series of steps, a positive organic semiconductor pattern is formed on the second substrate (step S50). Meanwhile, a cleaning process is performed on the first substrate to which the adhesive component and the organic semiconductor material are attached (step S60). Since the negative pattern is recovered to the first substrate on which the negative pattern is formed, it is input to the step S20 again.

The above-described process will be described in more detail with reference to the cross-sectional views shown in FIGS. 6A-6F.

Referring to FIG. 6A, a negative pattern 10b is formed on a pattern to be formed on the first substrate 10a by using a photolithography process or the like. As a component of a 1st board | substrate, any material, such as a metal, glass, a plastic, is applicable according to the objective.

Referring to FIG. 6B, the pressure-sensitive adhesive component may be attached onto the first substrate 10a on which the negative pattern 10b is formed. Preferably, the pressure-sensitive adhesive component is a liquid, and the first substrate 10a is brought into contact with the liquid pressure-sensitive adhesive 20 by dipping or the like. As the pressure-sensitive adhesive component, all general components having adhesive properties may be applied. Preferred pressure-sensitive adhesive components include pressure-sensitive adhesive components developed by 3M as a screen printable adhesive. For example, a brand name can apply the adhesive component of the model of SP7533 easily. This pressure-sensitive adhesive component is present in the liquid phase and is soluble in water, so it is easy to clean after work. Another example is a component developed in a series under the trade name Kraton by Shell Chemical. Since they are easily dissolved in other solvents including organic solvents, they are also easy to remove after use.

Referring to FIG. 6C, when the pressure-sensitive adhesive component is attached to the negative pattern 10b according to the shape of the pattern, the pressure-sensitive adhesive pattern 20a is formed as shown.

Referring to FIG. 6D, the organic semiconductor material layer 101 is formed on the second substrate 100 on which the organic semiconductor pattern is to be formed by, for example, surface deposition. The component of the second substrate may also be applied to any material such as metal, glass, plastic, etc., depending on the purpose. However, in order to manufacture a flexible display device, it is necessary to apply a flexible substrate. As the organic semiconductor material, pentacene as shown in FIG. 1 can be easily applied, and in addition, low molecular weight organic semiconductor materials such as phthalocyanine, regioregular poly (3-alkylthiophene), and end-substituted thiophene oligomers, etc. This is all applicable.

Referring to FIG. 6E, the first substrate 10a on which the negative pattern 10b and the pressure-sensitive adhesive pattern 20a are formed and the second substrate 100 on which the organic semiconductor material layer 101 is formed are brought into contact with each other.

Referring to FIG. 6F, when the first substrate 10a and the second substrate 100 are separated, the organic semiconductor material layer of the second substrate 100 may be formed by the adhesive component of the pressure-sensitive adhesive pattern 20a formed on the first substrate. A portion of 101 is removed to attach to the pressure-sensitive adhesive pattern 20a to form a negative organic semiconductor pattern 101b, and a desired organic semiconductor pattern 101a is formed on the second substrate 100.

For repeated use of the first substrate 10a, the pressure-sensitive adhesive pattern 20a and the negative organic semiconductor pattern 101b formed on the substrate are removed by a cleaning method, and the first substrate on which the negative pattern 10b is formed ( 10a) is returned to the process of FIG. 6b. The washing is mainly performed by a washing process using water, a washing process using acetone, a washing process using ultrasonic waves, and the like. In particular, the washing process using ultrasonic waves may be added to the washing process using water or acetone.

According to the method of the present invention described above, one photolithography process or a molding process must be performed to form a negative pattern on the first substrate, but when formed to have a sufficient thickness, since the work is easy and the repeatability is excellent, the shadow Compared to working with a mask, cost savings are much better.

Now, a method of manufacturing an organic thin film transistor using the above-described method of forming an organic semiconductor pattern will be described.

More specifically, FIG. 7 is a cross-sectional view schematically illustrating an organic thin film transistor manufactured by applying the method of forming an organic semiconductor pattern according to the method of the present invention. This organic thin film transistor can be manufactured as follows, for example.

First, a glass or plastic substrate, preferably polyethersulfone (PES), polyethylene terephthalate (PET), or the like is applied to a suitable conductive material on the substrate 100 of the flexible plastic material by applying a suitable method such as sputtering and etching. The electrode 111 is formed. Thereafter, a high dielectric constant organic material such as polyacrylonitrile, polyvinylidene fluoride, cyanoethylated fluorane, or the like is coated on the surface of the substrate 100 including the gate electrode 111 to cure the gate insulating film 120. Form. Next, the source electrode 131 and the drain electrode 132 are disposed on the gate insulating film 120 to form a transistor substrate. Here, any material may be used as long as the electrode material of the gate, source, and drain of the transistor does not adversely affect the function of the resulting transistor. For example, inorganic materials such as metal materials, indium tin oxide (ITO), and tin oxide (SnO ₂ ) may be used. Compound-based materials and conductive polymer materials such as doped polyaniline, polypyrrole, polythiophene and the like can be used as the electrode material.

After fabricating the transistor substrate as described above, an organic semiconductor pattern 142, which is a channel layer, is formed on the substrate using the conductive organic semiconductor compound. The film thickness of the organic semiconductor pattern 142 varies depending on the type of transistor and the like, but is usually about 10 to 500 mm. Such an organic semiconductor pattern may be manufactured by a printing method according to the process steps shown in FIGS. 5 and 6A through 6F.

In addition, although not shown, a protective layer such as a moisture barrier film may be provided as long as the operation of the transistor is not inhibited in order to prevent the incorporation of impurities and moisture permeation of the formed organic semiconductor pattern 142.

The amount of current flowing between the source and drain electrodes in the organic thin film transistor manufactured through the above series of manufacturing processes can be controlled by the gate voltage. In addition, although the board | substrate used for description here is a flexible plastic board | substrate, the same effect can be acquired also in a silicon board | substrate and other flexible board | substrates. Therefore, the method of forming the organic thin film transistor of the present invention can be applied not only to a field effect transistor fabricated on a plastic substrate but also to other electronic devices requiring high mobility and low cost by a simple process.

In the case of the organic thin film transistor manufactured by the above-described method, if the substrate is flexible, the TFT is also flexible, so that the entire device is flexible. Therefore, the flexible display device can be easily manufactured by applying the method of the present invention.

Application of the method of forming the organic semiconductor pattern according to the method of the present invention enables not only the easy manufacture of the organic thin film transistor as described above, but also the easy formation of the organic layer in the manufacture of various electronic display elements.

8 is a schematic cross-sectional view of a display device having a basic shape that can be manufactured by applying the method of forming an organic semiconductor pattern according to the present invention.

Referring to FIG. 8, the display element 200 includes a display function layer 302 and a power supply layer 300. The display functional layer 302 can be formed of various elements exhibiting a display function according to various principles. In the display element 200 of this figure, the display functional layer 302 is based on the display layer 302a and this. It consists of a pair of opposing electrode 302b, 302c. The method of forming the organic semiconductor pattern according to the present invention can be applied to the formation of the display functional layer 302.

As a result, it can be seen that the method of forming the organic semiconductor pattern according to the present invention can be applied at the time of forming the active layer at the time of forming the organic thin film transistor and can be easily applied at the time of forming the organic layer of various display elements.

Hereinafter, some display elements to which the method of the present invention is applicable will be described.

9 is a cross-sectional view of an active matrix organic electroluminescent display to which the method of the present invention is applicable.

Electroluminescent devices, which are attracting attention as one of flat panel display devices, are largely divided into inorganic electroluminescent devices and organic electroluminescent devices according to materials used. In general, an inorganic electroluminescent device is a device that emits light by applying a high electric field to a light emitting part and accelerating electrons in a high electric field to impinge on the light emitting center, thereby exciting the light emitting center.

In the organic electroluminescent device, electrons and holes are injected into the light emitting unit from cathode and anode electrodes, respectively, and the injected electrons and holes combine to generate excitons. It is an element that emits light when the excitons fall from the excited state to the ground state.

Due to the above operation principle, the inorganic electroluminescent device requires a high driving voltage of 100 to 200 V, while the organic electroluminescent device can be driven at a low voltage of about 5 to 20 V. Is going on. In addition, the organic electroluminescent device has excellent features such as wide viewing angle, high speed response and high contrast.

The organic electroluminescent device can be applied to both an active matrix display device and a passive matrix display device. The active matrix type organic light emitting display device is a display device which independently drives organic electroluminescent devices corresponding to a plurality of pixels by switching elements such as thin film transistors. The structure of the active matrix organic electroluminescent device is as follows.

Referring to FIG. 9, a blocking layer 412 made of silicon oxide is formed on an insulating substrate 410 such as glass, quartz, or sapphire. The substrate is a support of the EL element, and a substrate in which glass, plastic or the like is transparent is generally used. In the case of plastics, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polysulfone, polybutene, polymethylpentene and the like are preferable. The blocking film 412 may be omitted, but is preferably used to prevent various impurities in the substrate 410 from penetrating into the silicon film during the subsequent crystallization of the amorphous silicon film.

The thin film transistor 430 including the active pattern 414, the gate insulating layer 416, the gate electrode 418, the interlayer insulating layer 420, and the source / drain electrodes 426 and 428 is formed on the blocking layer 412. In forming the thin film transistor, the active pattern is formed by applying the organic semiconductor pattern forming method of the present invention.

The passivation layer 432 is formed on the entire surface of the substrate 410 including the thin film transistor 430. The pixel electrode 436 connected to one of the source / drain electrodes 426 and 428, for example, the drain electrode 428, is formed on the passivation layer 432 through the via hole 434. The pixel electrode 436 made of a transparent conductive film such as indium-tin-oxide or indium-zinc-oxide is an anode of the organic electroluminescent device 450. It is provided as an electrode.

On the passivation layer 432 including the pixel electrode 436, an organic insulating layer 440 having an opening 442 exposing a portion of the pixel electrode 436 is formed. An organic electroluminescent layer 444 is formed on the opening 442, and a metal electrode 446 for back emission is formed as a cathode of the organic electroluminescent device 450. The organic electroluminescent layer 444 may also be formed by applying a printing method which is a method of forming an organic semiconductor pattern according to the present invention.

As an example of a display element including a thin film transistor, an LCD element may also be mentioned. 10 is a cross-sectional view of a liquid crystal display device to which the method of the present invention is applicable.

As shown in FIG. 10, the liquid crystal display includes a TFT substrate 500 in which a thin film transistor is formed in a matrix form, a color filter substrate 540 provided to face the TFT substrate 500, and a color with the TFT substrate 500. And a liquid crystal layer 550 injected between the filter substrate 540 and the filter substrate 540.

Here, the TFT substrate 500 includes the TFT 510 formed on the first glass substrate 502 and the organic insulating layer 520 and the organic insulating layer 520 formed on the first glass substrate 502 including the TFT 510. The unit pixel formed of the pixel electrode 532 formed on the substrate is formed in a matrix form. The pixel electrode 532 is electrically connected to the thin film transistor and includes a transmissive electrode for transmitting internal light. The thin film transistor is composed of electrodes branched from a plurality of gate lines (not shown) and data lines (not shown).

In this case, the TFT 510 includes a gate electrode 511, a source electrode 512, and a drain electrode 513. In addition, the gate electrode 511 is insulated from the source electrode 512 and the drain electrode 513 through the gate insulating film 514. As power is applied to the gate electrode 511 on the gate insulating layer 514, an active pattern 515 for applying power to the drain electrode 513 from the source electrode 512 is formed. A source electrode 512 and a drain electrode 513 are formed on the active pattern 515.

An organic insulating film 520 is interposed between the TFT 510 and the pixel electrode 532, and a contact hole 525 for exposing the drain electrode 513 is formed in the organic insulating film 520. Here, the drain electrode 513 and the source electrode 512 are electrically connected through the contact hole 525.

Thereafter, the pixel electrode 532 is coated with a uniform thickness on the drain electrode 513 exposed by the organic insulating layer 520 and the contact hole 525.

Specifically, on the organic insulating layer 520 and the contact hole 525, a transparent electrode made of indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (hereinafter referred to as IZO) 532 is stacked to a uniform thickness.

Meanwhile, the color filter substrate 540 includes a black matrix 543, a color filter 544, a planarization film 546, and a common electrode 548 in order to prevent light leakage on the second glass substrate 542. Formed substrate.

Specifically, the color filter 544 is an R (Red) color pixel expressed in red by light, a G (Green) color pixel expressed in green by light, and a B (Blue) color expressed in blue by light. It consists of pixels.

Further, each of the color pixels is formed on the second glass substrate 542 which partially overlaps the black matrix 543 and does not have the black matrix 543 formed between the color filter 544 and the black matrix 543. Steps are formed in the. A planarization film 546 is formed to remove such a step, and a common electrode 548 is formed on the planarization film 546 with a uniform thickness. The common electrode 548 is made of a transparent conductive film such as an ITO or IZO film. At this time, the planarization film 546 is an organic film made of an acrylic resin or a polyamide resin which is one of the photosensitive organic insulating films.

In the above LCD element, it is possible to apply the method of forming the organic semiconductor pattern according to the present invention at the time of forming the active pattern at the time of forming the thin film transistor. In particular, the organic semiconductor pattern formation method by the vacuum deposition method using the shadow mask, it is impossible to increase the size due to the resolution is lowered due to the difference in the coefficient of thermal expansion between the shadow mask and the substrate, the printing method of the present invention When applied, the size can be enlarged.

Hereinafter, the printable display device, so-called electronic paper type device, to which the method of forming the organic semiconductor pattern of the present invention is very easily applicable, will be described.

11 schematically illustrates a printable display device including an electrophoretic display layer.

In the case of an electrophoretic display device, a microcapsule containing electrophoretic particles is interposed between transparent electrodes, and a positive potential and a negative potential are applied, so that the electrophoretic particles charged with a positive potential are recognized as a white mode and charged with a negative potential. Electrophoretic particles are devices designed to be recognized in black mode. The display element can be completed by connecting the OTFT as shown in FIG. 7 to such a display panel.

An operation of such a display device will be described with reference to FIG. 11. As shown in FIG. 11, the electrophoretic display device 700 is disposed at positions corresponding to the individual electrodes 702 and their individual electrodes 702 and is fixed by the adhesive layer 705. A microcapsule 703 including 707 and a common electrode 704 covering the display layer 706 constituted by these microcapsules 703 and the adhesive layer 705 are included. The individual electrode 702 and the common electrode 704 constitute a pair of counter electrodes. The common electrode 704 located on the display surface side of the display device 700 is usually transparent. The organic thin film transistor is connected to the individual electrode 702. That is, the organic thin film transistor including the gate electrode 611, the gate insulating layer 620, the source / drain electrodes 631 and 632, and the organic semiconductor pattern 642 formed on the substrate 600 may contact the via contact 650. The structure is electrically connected to the individual electrodes 720 through.

The application of a potential difference between the opposite electrodes 702 and 704 causes the electrophoretic particles 707 in the microcapsules 703 to form an array so that they display an image.

In particular, in the case of the paper-type electrophoretic display device, when the organic thin film transistor is applied, when the deposition process using the conventional shadow mask is applied, the size can be realized only up to about 10 cm x 10 cm. According to the method of forming the organic semiconductor pattern according to the present invention, it will be possible to increase the size without limitation.

It is possible to easily apply the method of forming the organic semiconductor pattern and the method of manufacturing the organic thin film transistor according to the present invention in the manufacture of the various display elements as described above, in addition to various applications within the scope of the present invention This is possible.

According to the present invention as described above it is easy to apply the organic semiconductor material in place of the existing a-Si to simplify the process and in particular the manufacturing of a flexible display is very easy.

In particular, according to the method of forming an organic semiconductor pattern according to the present invention, there is a problem of resolution deterioration caused by the difference in thermal expansion coefficient between the shadow mask and the substrate during the deposition process, and difficulty in handling the shadow mask having a thickness of several μm. The problem can be solved.

In addition, by forming the organic semiconductor pattern by applying the method of the present invention, it is possible to increase the size compared to the deposition process using a conventional shadow mask.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be appreciated.

Claims (17)

Forming a negative pattern on the first substrate; Attaching an adhesive component on the formed negative pattern; Forming an organic semiconductor material layer on a second substrate on which an organic semiconductor pattern is to be formed; And Bonding the first substrate and the second substrate to attach and remove the organic semiconductor material of the organic semiconductor material layer on the second substrate by means of a pressure-sensitive adhesive component on a negative pattern on the first substrate; Method of formation. The method of claim 1, further comprising the step of cleaning the first substrate to which the pressure-sensitive adhesive component and the organic semiconductor material are attached, and then re-input for performing the step of attaching the pressure-sensitive adhesive component on the negative pattern formed. A method of forming an organic semiconductor pattern. The method of claim 2, wherein the pressure-sensitive adhesive component is washed by at least one process selected from the group consisting of a washing process using water, a washing process using acetone, and a washing process using ultrasonic waves. . The method of claim 1, wherein the pressure-sensitive adhesive component is a liquid phase, and the pressure-sensitive adhesive component is attached onto a negative pattern by dipping the first substrate into a liquid pressure-sensitive adhesive component. The method of claim 1, wherein the organic semiconductor material is an organic semiconductor having no solvent in which the organic semiconductor material is dissolved. The method of claim 5, wherein the organic semiconductor material is pentacene (pentacene). In the method of manufacturing an organic thin film transistor comprising a gate electrode, an insulating film, a source / drain electrode and an organic active layer formed of an organic semiconductor material, The organic active layer Forming a negative pattern on the first substrate; Attaching an adhesive component on the formed negative pattern; Forming an organic semiconductor material layer on a second substrate on which an organic semiconductor pattern is to be formed; And Bonding the first substrate and the second substrate to attach and remove the organic semiconductor material of the organic semiconductor material layer on the second substrate by means of a pressure-sensitive adhesive component on a negative pattern on the first substrate; The manufacturing method of the organic thin film transistor formed by the formation method of the. 8. The method of claim 7, wherein the substrate is a flexible plastic. 8. The method of claim 7, further comprising the step of cleaning the first substrate to which the pressure-sensitive adhesive component and the organic semiconductor material are attached, and then re-input for performing the step of attaching the pressure-sensitive adhesive component on the formed negative pattern. The manufacturing method of an organic thin film transistor. The method of claim 9, wherein the pressure-sensitive adhesive component is cleaned by at least one process selected from the group consisting of a washing process using water, a washing process using acetone, and a washing process using ultrasonic waves. . The method of claim 7, wherein the pressure sensitive adhesive component is a liquid phase, and the pressure sensitive adhesive component is attached onto a negative pattern by dipping the first substrate into a liquid pressure sensitive adhesive component. The method of claim 7, wherein the organic semiconductor material is an organic semiconductor having no solvent in which the organic semiconductor material is dissolved. The method of claim 12, wherein the organic semiconductor material is pentacene. A method of manufacturing a display device comprising an organic thin film transistor according to the manufacturing method of claim 7. 15. The method of claim 14, wherein the display element comprises an electroluminescence (EL) element, a liquid crystal display (LCD) element and an electrophoretic printed display element. A method of manufacturing a display device comprising an organic semiconductor pattern according to the method of claim 1. 17. The method of claim 16, wherein the display element comprises an electroluminescence (EL) element, a liquid crystal display (LCD) element, and an electrophoretic printed display element.