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JPH03152942A - Dicing and die bonding film - Google Patents

Dicing and die bonding film

Info

Publication number
JPH03152942A
JPH03152942A JP1291639A JP29163989A JPH03152942A JP H03152942 A JPH03152942 A JP H03152942A JP 1291639 A JP1291639 A JP 1291639A JP 29163989 A JP29163989 A JP 29163989A JP H03152942 A JPH03152942 A JP H03152942A
Authority
JP
Japan
Prior art keywords
film
adhesive
layer
adhesive layer
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1291639A
Other languages
Japanese (ja)
Other versions
JP2665383B2 (en
Inventor
Yoshio Ishita
井下　美穂
Yuzo Akata
祐三 赤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP29163989A priority Critical patent/JP2665383B2/en
Publication of JPH03152942A publication Critical patent/JPH03152942A/en
Application granted granted Critical
Publication of JP2665383B2 publication Critical patent/JP2665383B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To hold the balance between the peeling property of an adhesive layer and an adhesion layer for wafer fixing use at the time of dicing and the adhesion of the adhesive layer and the adhesion layer by a method wherein the adhesive layer and a thermoplastic adhesive film are laminated on a support substrate in a state that they are peelable from each other and the adhesion layer for wafer fixing use is provided on the film. CONSTITUTION:An adhesive layer 3, a thermoplastic adhesive film 2 and an adhesion layer 1 for wafer fixing use are laminated in order on a support substrate 4 and the layer 3 and the film 2 are laminated in a state that they are peelable from each other. A semiconductor wafer is fixed on the layer 1 of this dicing and die bonding film, the layer 1 and the film 2 are divided along with the wafer at the time of dicing, the film 2 is peeled from the layer 3 in the interface between the film 2 and the layer 3 and a semiconductor element is bonded and fixed on a material to be mounted through the layer 1 and the film 2 by heating and is used. As the film 2, a polyimide or polyester film is used.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明ｒｉ半纏体ウェハのダイシングあ・よびダイシン
グ後の半導体素子の接着が容易かつ扁稍度に行ない得る
ダイシング・ダイボンドフィルムに関し、詳［７〈は半
導体素子をリードフレームヤ基板などの被数月俸に固着
１゛るための接着剤を、ダイシング前の半導体ウェハに
予め付設した状態で取り扱いができるようにし、製造工
程の簡略化を行なうフィルムに関する。Detailed Description of the Invention <Industrial Application Field> Regarding the dicing/die-bonding film of the present invention, which allows dicing of RI semi-integrated wafers and bonding of semiconductor elements after dicing with ease and uniformity, detailed [7] 〈〈 is a film that simplifies the manufacturing process by making it possible to handle semiconductor wafers with an adhesive attached to them in advance before dicing, for fixing semiconductor elements to lead frames, substrates, etc. Regarding.

〈従来の技術〉 回路パターンが形成された半導体ウェハは、必要に応じ
て裏面研摩して厚さ調整した後、ダイシング後程で素子
小片に分断される。形成された半導体素子に、マウント
工程において接着剤を介し。<Prior Art> A semiconductor wafer on which a circuit pattern has been formed is back-polished to adjust the thickness if necessary, and then cut into small element pieces after dicing. It is attached to the formed semiconductor element through an adhesive in the mounting process.

被取付体に固着された後、ボンディング工程に移行され
る。なお、ダイシングに際しては切断層の除去などのた
め超純水にて適度な液圧（通常、２ｋｇ／　ｃａ程度）
で洗浄することが通例である。After being fixed to the object to be attached, a bonding process is performed. In addition, when dicing, use ultrapure water at an appropriate hydraulic pressure (usually around 2 kg/ca) to remove the cut layer.
It is customary to wash with

前記においで、被取付体に接着剤を付設し、この接着剤
を介して半導体素子を固着するという従来の方法で汀、
接着剤層の厚さを均一にすることが困難であったり、接
着剤の付設に特殊な装置を要したり、１だ付設に長時間
を要したりするために、半導体素子にダイシングする前
の半導体ウェハに、予め同者用の接着剤を設ける方法が
試みらｔしている。In the above case, the conventional method of attaching an adhesive to the object to be attached and fixing the semiconductor element through this adhesive is used.
Before dicing into semiconductor devices, it is difficult to make the thickness of the adhesive layer uniform, special equipment is required to apply the adhesive, or it takes a long time to apply the adhesive. Attempts have been made to prepare a semiconductor wafer with an adhesive for the same purpose in advance.

前記の方法として、支持基材の上に導電性接着剤層を剥
離可能に付設してなるウェハ固着部材を用い、その接着
剤層に半導体ウエノ・を接着保持させ、該接着剤層と共
に半導体ウニ・・を菓子小片にダイシングする。次に、
支持基材を延伸し１個々に分割形戎さ九た半導体素子を
接着剤層と共にビックアンプしつつ、導電性接着剤層を
介して被取付体に固着する方法が提案されている（特開
昭６０−５７Ｇ４２号公報参照）。As the method described above, a wafer fixing member comprising a conductive adhesive layer removably attached to a supporting base material is used, a semiconductor wafer is adhered and held to the adhesive layer, and the semiconductor wafer is attached together with the adhesive layer. Dice ... into small confectionery pieces. next,
A method has been proposed in which a supporting base material is stretched, a semiconductor element is cut into individual pieces, and the semiconductor elements are bulk-amplified together with an adhesive layer, and then fixed to an object to be mounted via a conductive adhesive layer (Japanese Patent Application Laid-Open No. (See Publication No. 60-57G42).

この方法では固着部材がダイシング工程［Ｐいて半導体
ウェハを接層保持する役割も兼ねており。In this method, the fixing member also plays the role of holding the semiconductor wafer in contact during the dicing process.

工程が簡略となる利点を有している。This has the advantage of simplifying the process.

１−かしながら、支持基材と導電性接着剤層との接着力
を調整することが困難である。すなわち。1-However, it is difficult to adjust the adhesive force between the supporting base material and the conductive adhesive layer. Namely.

半導体ウェハを素子小片に分断する点からは、ダイシン
グ時に支持基材と４電在接着剤層とが層間剥離してダイ
シング不能ヤ分断寸法ミスなどの事態が生じないように
、その剥離力に耐えうる強い保持力が要求される。−万
、形成された半導体素子を導ＩＩＥ性接着剤層と共に支
持基材から剥離する点からに１弱い接着力であることも
要求さ几る。From the point of view of cutting a semiconductor wafer into small element pieces, it is necessary to withstand the peeling force so that the supporting base material and the four-electrode adhesive layer do not peel off during dicing, resulting in failure of dicing or errors in parting dimensions. Strong holding power is required. - In order to peel the formed semiconductor element together with the conductive IIE adhesive layer from the supporting substrate, it is also required that the adhesive strength be 1 weaker.

そのために、これらの背反する要求がバランスを保つよ
うに、支持基材と纏′屯注接着剤層との接着力を調整す
る必要があるが、その調整は極めて困難である。特に、
半導体ウェハを回転丸刃などでダイシングする場合Ｖこ
は、大きい負荷がかかり高い保持力が要求される。Therefore, it is necessary to adjust the adhesive force between the supporting base material and the bonding adhesive layer so as to maintain a balance between these contradictory demands, but this adjustment is extremely difficult. especially,
When dicing a semiconductor wafer with a rotary round blade, a large load is applied to the wafer and a high holding force is required.

そこで本発明者らは、上記従来技術の欠点を解決するも
のとし゛Ｃ１支持基材Ｖこ設けた粘Ｉｕ層のｋに、半纏
体ウェハおよび素子固着用接着を有し。Therefore, the present inventors have attempted to solve the above-mentioned drawbacks of the prior art by providing an adhesive for fixing the semi-integrated wafer and elements to the viscous Iu layer provided on the C1 support base V.

その粘着層と固着用接着層と全剥離可能に形成してなる
ダイシング・ダイボンド用フィルムを提案した。１．か
１１．上記欠点ｄ解決されるものの粘着層と固着用接着
層の剥離性および被取付体と固着用接着層の高温接着強
度などに未だ間融が残っている。We have proposed a film for dicing and die bonding that is formed by forming the adhesive layer and the adhesion layer to be completely removable. 1. Or 11. Although the above-mentioned drawback d has been solved, there are still problems in the releasability of the adhesive layer and the adhesive layer for fixing, and the high-temperature adhesive strength between the object to be attached and the adhesive layer for fixing.

〈発明が解決しようとする課融〉 従って１本発明はダイシング時Ｖこおける粘ＭＷＩと固
着用接着層の剥離性と接着性のバランスを保ち、ダイボ
ンド時の被取付体と固着用接着層との間の接１ａ強闇、
特に高温接着強度に優れるダイシング・ダイボンドフィ
ルムを提供することを目的とする。<Problems to be Solved by the Invention> Therefore, 1. the present invention maintains a balance between the adhesive MWI during dicing and the releasability and adhesiveness of the adhesive layer for fixing, and improves the relationship between the object to be attached and the adhesive layer for fixing during die bonding. Between contact 1a strong darkness,
The purpose of the present invention is to provide a dicing die-bonding film that has particularly excellent high-temperature adhesive strength.

く課題を解決するための手段〉 本発明者らは上記目的を達成するために、さらに検討を
重ねた結果、粘着層を介した半導体素子の保持方式とし
て、上記粘着層と固着用接着剤層の間に熱可塑性接着フ
ィルムを介在させることにより、高温接着強度が向上し
、さらにダイシング後のピックアップ時における剥離性
にも優れることを見い出したものである。また、接着層
の吸水・吸湿が低減して信頼性が向上し、かつ、ダイボ
ンド加熱時間が短縮され合理化されることを見い出し１
本発明を完成するに至った。Means for Solving the Problems In order to achieve the above object, the present inventors have conducted further studies and found that the above adhesive layer and a fixing adhesive layer are used as a method of holding a semiconductor element through an adhesive layer. It has been discovered that by interposing a thermoplastic adhesive film between the two, the high-temperature adhesive strength is improved, and the peelability during pick-up after dicing is also excellent. In addition, it was found that the reliability is improved by reducing the water absorption and moisture absorption of the adhesive layer, and the die bonding heating time is shortened and streamlined.
The present invention has now been completed.

すなわち０本発明は支持基材上に粘着層、熱可塑性接着
フィルムおよびウエノ飄固定用接着層を順次積層してな
り、前記粘着層と熱可塑性接層フィルムが剥離可能に積
層されてなるダイシング・ダイボンドフィルムを提供す
るものである。In other words, the present invention is a dicing method in which an adhesive layer, a thermoplastic adhesive film, and an adhesive layer for fixing a wafer are sequentially laminated on a supporting base material, and the adhesive layer and the thermoplastic adhesive film are laminated in a releasable manner. The present invention provides a die bond film.

本発明で用いる支持基材は、半導体ウェハを固着用接着
層に固定してダイシングし友後、ダイボンドするまでの
開学導体ウェハを支持するものであり、一般にポリプロ
ピレン、ポリエチレン、ポリエステル、ポリカーボネー
ト、エチレン・酢酸ビニル共電合体、エチレン・プロピ
レン共重合体。The supporting base material used in the present invention supports the semiconductor wafer while it is being fixed to the adhesive layer for dicing, dicing, and die bonding, and is generally made of polypropylene, polyethylene, polyester, polycarbonate, or ethylene.・Vinyl acetate co-electropolymer, ethylene/propylene copolymer.

エチレン・エチルアクリレート共眠合体、ポリ塩化ビニ
ルの如きプラスチツ、りからなるフイルムヤ。A film made of a combination of ethylene and ethyl acrylate, and plastics such as polyvinyl chloride.

金輌陥などか用いらｒしる。帯電防止能を有するプラス
チック糸の支持基材は、導電性物質、？！Ｉえば金槁６
合金、（−の酸化物などからなる厚さ：）０〜５００Ａ
の蒸着層を有するフィルムｆ、このフィルムのうξネー
ト体などとして得ることができる。I don't know if it's used for money or something like that. Is the supporting base material of plastic thread with antistatic ability conductive material? ! If I say Kim 6
Alloy, (thickness made of - oxide, etc.) 0~500A
It is possible to obtain a film f having a vapor-deposited layer of , a ξ nate body of this film, and the like.

支ｌｔｖ抵材の厚さは５〜２００μへ、就中１０〜１０
０μ慣が一般的である。The thickness of the supporting LTV resisting material is 5 to 200μ, especially 10 to 10μ.
0μ habitus is common.

本発明において支持基材上ｖｃ　ｉ　、後述する熱可塑
注接清フィルムと剥離可能に設けられた粘着層が＆騙さ
れている。In the present invention, an adhesive layer is provided on the support base material vc i so as to be releasable from the thermoplastic adhesive film described below.

この粘着層はダイシングした後、半導体素子をピックア
ップする際に、熱可塑性接着フィルムと容易に剥離でき
るものであり、その材質は特に限定されない。This adhesive layer can be easily peeled off from the thermoplastic adhesive film when picking up the semiconductor element after dicing, and its material is not particularly limited.

本発明のフィルムにおいて上記粘着層と熱可塑性接着フ
ィルムとの接着力に、１８０度ビール値（常温、引張速
度：）００朋／分）に基づき、半導体ウェハの分断時に
おいて２００ｇ／２０ｍ１以−ヒ、形成さＩＬ７で、半
導体チップの剥離時において１５０．＠／ｉＱｍｍ以ト
となるように粘着Ｍないし熱可塑性接着フィルムを調製
したものが８分断時の保持力。In the film of the present invention, the adhesive force between the adhesive layer and the thermoplastic adhesive film is 200 g/20 m1 or more when cutting the semiconductor wafer, based on the 180 degree beer value (normal temperature, tensile speed: 00 mm/min). , formed IL7, and 150. Adhesive M or thermoplastic adhesive film prepared so that @/iQmm or less has a holding power when cut into 8 pieces.

剥離時の剥離容易性などの点から好ましい。This is preferable from the viewpoint of ease of peeling during peeling.

剥離を可能とする方式については特に限定はなく、剥離
工程において粘ｗ層と熱可塑性接着フィルムとの接着力
を低下、ないし喪失させうる方式でめｎはよい。その例
と１−ては、粘着層の硬化方式０発泡方式ないし加熱膨
張方式、ブルーミング方式、粘着層ないし熱可塑性接着
フィルムの冷却方式、粘着層と熱可塑性接着フィルム層
との間に加熱処理で作用する接着力低減層を介在させる
方式などがあげられる。本発明ではこれらの方式を適宜
に組み合わせて用いてもよい。There is no particular limitation on the method that enables the peeling, and any method that can reduce or lose the adhesive force between the viscous layer and the thermoplastic adhesive film in the peeling step may be used. Examples include curing methods for the adhesive layer, foaming method or thermal expansion method, blooming method, cooling method for the adhesive layer or thermoplastic adhesive film, and heat treatment between the adhesive layer and the thermoplastic adhesive film layer. Examples include a method in which an active adhesive force reducing layer is interposed. In the present invention, these methods may be used in combination as appropriate.

前記した粘着層の硬化方式は、架橋度を増大させて接着
力を低下させるもので、その形成は紫外線硬化型′？加
熱硬化型などの感圧接着剤を用いることにより行なうこ
とができる。The method of curing the adhesive layer described above is to increase the degree of crosslinking and reduce the adhesive strength, and its formation is of the ultraviolet curing type. This can be done by using a pressure-sensitive adhesive such as a heat-curing type.

紫外線硬化型の感圧接着剤の代表例としては。A typical example of a UV-curable pressure-sensitive adhesive is:

不飽和結合を２個以上有する寸７ＪＤ重合性化合物ヤエ
ボキシ基を有するアルコキシンランの如き光重合性化合
物と、カルボニル化合物ｆ有機硫黄化合物、過酸化物、
アミン、オニウム塩系化合物の如き光重合開始剤を配合
したゴム系感圧接層剤や。Dimension 7JD polymerizable compound having two or more unsaturated bonds A photopolymerizable compound such as an alkoxylan having a Yaeboxy group, a carbonyl compound, an organic sulfur compound, a peroxide,
Rubber pressure-sensitive adhesives containing photopolymerization initiators such as amines and onium salt compounds.

アクリル系感圧接着剤などがあげられる（特開昭６０−
１９６９５６号公報）、、光重合性イビ合物、光重合開
始剤の配合量ニ、ぞｎ、ぞ几ベースポリマー１００重重
部あたりｌＯ〜５００東置部、０．１〜２０　　重量部
が一般的ｒある。なお、アクリル系ホリマーには。Examples include acrylic pressure-sensitive adhesives (Japanese Patent Application Laid-Open No. 1983-
196956), the compounding amount of the photopolymerizable compound and the photopolymerization initiator is generally 10 to 500 parts by weight, 0.1 to 20 parts by weight per 100 parts by weight of the base polymer. There is r. In addition, for acrylic polymer.

通例のもの（特公昭５７−５４０６８号公報、特公昭５
８−３３９０９号公報等）のほか、側鎖にラジカル反応
性不飽和基を有するもの（特公昭６１−５６２６４号公
報）や１分子中ＶＣエポキシ基を有するものなども用い
うる。また、不飽和結合を２個以上有する竹刀０重合性
化合物としては１例えばアクリル酸やメタクリル酸の多
価アルコール系エステルやオリゴエステル、エポキシ系
ｆウレタン系化合物などがあげらｎる。さらに、エチレ
ングリコールングリシンルエーテルの如き分子中にエポ
キシ基を１個又ｒ１２個以上有するエポキシ基官能性架
橋剤を追加配合して架橋効率を上げることもできる。Usual ones (Special Publication No. 57-54068, Special Publication No. 54068)
8-33909, etc.), those having a radically reactive unsaturated group in the side chain (Japanese Patent Publication No. 61-56264), and those having a VC epoxy group in one molecule can also be used. Examples of the Shinai polymerizable compound having two or more unsaturated bonds include polyhydric alcohol esters and oligoesters of acrylic acid and methacrylic acid, epoxy urethane compounds, and the like. Furthermore, crosslinking efficiency can be increased by adding an epoxy group-functional crosslinking agent having one or 12 or more epoxy groups in the molecule, such as ethylene glycol glycine ether.

紫外ＭＡ硬化型の粘着層を形成する場合には紫外線照射
処理を可能とすべく支持基材には透明なフィルムなどが
用いらｎる。When forming an ultraviolet MA curing type adhesive layer, a transparent film or the like is used as the supporting base material to enable ultraviolet irradiation treatment.

加熱架橋型の粘着剤の代表例としては、ポリインシアネ
ート、メラミン樹脂、アミンーエボキン樹脂、過酸化物
、金楓キレート化合物の如き架橋剤ＪＰ、必要に応じジ
ビニルベンゼン、エチレンクリコールジアクリレート、
トリメチロールプロパントリメタクリレートの如き多官
能性化合物からなる架橋調節剤などを配合したゴム系粘
着剤ヤアクリル系粘着剤などがあげられる。Typical examples of heat-crosslinking type adhesives include polyincyanate, melamine resin, amine-evoquine resin, peroxide, crosslinking agent JP such as Kinkae chelate compound, divinylbenzene, ethylene glycol diacrylate, if necessary, etc.
Examples include rubber adhesives, acrylic adhesives, etc., which contain a crosslinking regulator made of a polyfunctional compound such as trimethylolpropane trimethacrylate.

粘着層の発泡方式、ないし加熱膨張方式は、加熱処理で
粘着ＮｊＪを発泡構造とすることにより、あるいは当該
層の膨張下に表面を凹凸構造とすることにより、接着面
積を減少させて接着力を低下させるもので、その形成は
粘着層に発泡剤、ないし加熱膨張剤を含有させることに
より行なうことができる。前記した硬化方式との併用は
、接着力の低下に−特に有効である。The foaming method or thermal expansion method of the adhesive layer reduces the adhesive area and increases the adhesive strength by making the adhesive NjJ into a foamed structure through heat treatment, or by creating an uneven structure on the surface while the layer expands. It can be formed by incorporating a foaming agent or a thermal expansion agent into the adhesive layer. Combination use with the above-mentioned curing method is particularly effective in reducing adhesive strength.

発泡剤としては１例えば炭酸アンモニウムヤアジド類の
如き無機系発泡剤、アゾ系化合物ヤピドラジン系化合物
、セミカルバジド系化合物、トリアゾール系化合物、Ｎ
−二トロン系化合物の如き有機系発泡剤など、公知物を
用いてよい。加熱膨張剤としても１例えばガス等を封入
したマイクロカフセルなど、公知物を用いてよい。前記
のマイクロカプセルは９発泡剤と１−ても用いることが
できて、前記した膨張による表向凹凸構造とするか発泡
による発泡構造とするかを制御することができ、また粘
着剤中に容易に分散させることができて好ましく用いう
る。発泡剤ないし加熱膨張剤の使用量は、ベースポリマ
−１１ＪＯ重量部あたり３〜３００重電部が一般的であ
る。As blowing agents, 1, for example, inorganic blowing agents such as ammonium carbonate yaazides, azo compounds, yapidrazine compounds, semicarbazide compounds, triazole compounds, N
- Known materials such as organic blowing agents such as nitron compounds may be used. As the heating expansion agent, a known material such as a microcafucell filled with gas or the like may be used. The above-mentioned microcapsules can be used together with a blowing agent, and it is possible to control whether the above-mentioned microcapsules have an uneven surface structure due to expansion or a foamed structure due to foaming. It can be preferably used because it can be dispersed in The amount of the blowing agent or thermal expansion agent used is generally 3 to 300 parts by weight per part by weight of the base polymer 11JO.

粘Ｍ層のブルーミング方式は、　７１１１Ｉ熱処理で熱
可塑性接着フィルムとの界面にブルーミング剤を活発に
滲出させて接着力を低ｆさせるもので、その形成は粘着
層にブルーミング剤を官有させることにより行なうこと
ができる。用いるブルーミング剤は、熱可塑性接着フィ
ルムとの界面における接着力を低下させるもので８ｆ１
．ばよ〈、一般には界面活性剤ヤシリコーン組成物、パ
ラフィンやワックスなどの低融点物質などが用いられる
。有機浴剤ｆ水などの液体もマイクロカプセル化して用
いることができる、界面活性剤のに用は帯電防止能を付
与しうる利点などもある。ブルーミング剤の団用童は、
ペースポリマーｉｏｏ　重ｉｔｓあたｖｌ。The blooming method of the viscous M layer is to actively ooze out the blooming agent at the interface with the thermoplastic adhesive film through 7111I heat treatment, thereby lowering the adhesive force, and this formation is achieved by possessing the blooming agent in the adhesive layer. can be done. The blooming agent used is one that reduces the adhesive force at the interface with the thermoplastic adhesive film and is 8f1.
．． Generally, a surfactant, a silicone composition, a low melting point substance such as paraffin or wax, etc. are used. Organic bath agents also have the advantage that liquids such as water can be microencapsulated and used, and surfactants can impart antistatic properties. The group of blooming agents is
Pace polymer ioo heavy its vl.

〜３００重蓋部が一般的である。~300-layer lid portions are common.

粘Ｍ層ないし熱可塑性接着フィルムの冷却方式は、低温
化により接着力を低下させるもので、冷却温度は一３０
℃程度までが一般的である。冷却方式は他の方式を適用
したあとに適用することもできる。The cooling method for the viscous M layer or thermoplastic adhesive film is to lower the adhesive strength by lowering the temperature, and the cooling temperature is -30°C.
Temperatures up to about ℃ are common. The cooling method can also be applied after applying other methods.

加熱処理で作用する接着力低減層を介在させる方式は、
熱可塑性接着フィルムと粘着層との間に。The method of interposing an adhesion reduction layer that acts through heat treatment is
between the thermoplastic adhesive film and the adhesive layer.

接着力低減層を固形層として設け、〃０熱処理にょつて
接着力低減層を変化させて当該界面の接着力を低減させ
るものである。接着力低減層の形成には、Ｔ＠記のマイ
クロカプセル化した発泡剤、ないし刀ｎ熱膨張剤ヤプル
ーミング剤のほか、　７１１１熱処理で軟化ないし流動
体化するパラフィンや１ノツクスなどの低融点物質も用
いつる。接着力低減層は粘着層等の面上に部分塗布ヤパ
ターン塗布した状態のものとして形成してもよく、熱可
塑性接着フィルムと粘着層との界面の全面を占有する必
要はない。The adhesive force reducing layer is provided as a solid layer, and the adhesive force reducing layer is changed by heat treatment to reduce the adhesive force at the interface. To form the adhesion reduction layer, in addition to the microencapsulated foaming agent, thermal expansion agent, and plumping agent described in T@, low-melting substances such as paraffin and 1NOx, which soften or become fluidized by heat treatment with 7111, are also used. Vine used. The adhesive strength reducing layer may be formed as a partial coating or pattern coating on the surface of the adhesive layer, etc., and does not need to occupy the entire surface of the interface between the thermoplastic adhesive film and the adhesive layer.

本発明において粘着層の厚さは１〜ｌＯＯμ曜、就中１
〜４０μｍが適当である。In the present invention, the thickness of the adhesive layer is 1 to 1OOμ, especially 1
~40 μm is appropriate.

本発明において用いる熱ＯＴ塑性接着フィルムは。The thermo-OT plastic adhesive film used in the present invention is as follows.

本発明のダイシング・ダイボンドフィルムに半導体ウェ
ハを固着し、ダイシングしたのち、ビックアンプ工程Ｖ
Ｃよって半導体素子、ウェハ固定用接着層と共に、隣接
する粘着層の界面から剥離、除去’ｇｎ、ダイボンド時
に加わる熱によって浴融し。After fixing a semiconductor wafer to the dicing/die-bonding film of the present invention and dicing it, a big amplifier process V
Therefore, the semiconductor element, along with the adhesive layer for fixing the wafer, is peeled off and removed from the interface between adjacent adhesive layers, and is melted in a bath by the heat applied during die bonding.

被取付体と接着するものであり、その材質は特に限定さ
れない。例えば、　ｉｙａ熱温度１５０〜４００℃。It is to be bonded to the object to be attached, and its material is not particularly limited. For example, iya heat temperature 150-400℃.

好ましく　Ｆｉ２００〜３５０℃で浴融接着するものが
使用でき、具体的なフィルムとしては、ポリエーテルイ
ミド、シロキサン言上ポリイミド、含フッ累ポリイばド
の如きポリイはド系フィルムの他、Ｕポリマー　アクリ
ル系ポリマー、芳香族ポリエステに’ｆｚどが挙げらｒ
Ｌる。なお、該フィルムの厚さは１〜１００μ慣が適当
である。Preferably, a film that can be bath-fused and bonded at a Fi of 200 to 350°C can be used. Specific films include polyetherimide, siloxane polyimide, fluorine-containing polyamide films, as well as U polymer and acrylic films. Polymers and aromatic polyesters include 'fz etc.
L. In addition, the thickness of the film is suitably 1 to 100 microns.

ウェハ固定用接着層に、ダイシング工程時に半導体ウェ
ハ全支持し、素子に分断後、ビックアップ工程およびダ
イボンド工程時に、その両面に半導体素子と熱可塑性接
着フィルムを接着、保持するものであり、常温から１０
０℃の温度域で粘着性を有し、ダイボンド時の加熱にも
耐えうるものである。このような接着層を形成する接着
剤としては、熱ＯＴ！ｌＩ２注樹脂ヤ熱硬化性樹脂から
なる適当な接着剤を用いる。The adhesive layer for fixing the wafer fully supports the semiconductor wafer during the dicing process, and after dividing it into elements, adheres and holds the semiconductor element and thermoplastic adhesive film on both sides during the big-up process and die bonding process. 10
It has adhesive properties in the temperature range of 0°C and can withstand heating during die bonding. The adhesive used to form such an adhesive layer is Heat OT! lI2Note: A suitable adhesive consisting of a thermosetting resin is used.

一般ＶＣｉ、ｊエチレン・酢酸ビニル共重合体、エチレ
ン・アクリル酸エステル共重合体、ポリエチレン、ポリ
マａピレン、ポリ１ミドポリエーテルスルホン、ポリス
ルホン、ポリエステル、ポリカーボネート、セルロース
誘導体、ポリビニルアセタール、ポリビニルエーテル　
ポリウレタン　フェノキン樹脂の如き熱可塑性樹脂から
なるホットメルト型接着剤、エポキン樹脂、ポリイミド
樹脂。General VCi, j ethylene/vinyl acetate copolymer, ethylene/acrylic ester copolymer, polyethylene, polymer a-pyrene, poly1mide polyether sulfone, polysulfone, polyester, polycarbonate, cellulose derivative, polyvinyl acetal, polyvinyl ether
Polyurethane Hot-melt adhesives made of thermoplastic resins such as phenoquine resins, epoxy resins, and polyimide resins.

マレイミド樹脂、ノリコーン樹脂。フェノール樹脂の如
き熱硬化性樹脂を用いた接着剤、その他アクリル樹脂、
ゴム系ポリマー、フッ素ゴム系ポリマー、フッ素樹脂な
どからなる接着剤も用いられる。熱硬化性樹脂系接智剤
に接着剤定用接着層は。Maleimide resin, Noricone resin. Adhesives using thermosetting resins such as phenolic resins, other acrylic resins,
Adhesives made of rubber polymers, fluororubber polymers, fluororesins, etc. can also be used. The thermosetting resin adhesive has a fixed adhesive layer.

Ｂステージ状態として形成される一固定用Ｍｊ、着層に
、し０えばアルミニウム、＠、銀、金、パラジウム、カ
ーボンの如き４電性物質からなる微粉末を金山さ？で４
電性を何年してもよい、また、アルミナの如き熱伝導性
物質からなる微粉末を含ゼさせて熱伝導性を高めてもよ
い。For example, a fine powder made of a tetraelectric substance such as aluminum, silver, gold, palladium, or carbon is added to the fixing Mj layer formed in the B-stage state. So 4
It may be electrically conductive for any number of years, or it may contain fine powder of a thermally conductive material such as alumina to increase thermal conductivity.

本発明のフィルムはウェハ固定用接着層に半導体ウェハ
を固定し、ダイシング時にウェハと共に固定用接着層お
よび熱可塑性樹脂フィルムを分断後、熱可塑性接着フィ
ルムと粘Ｍ層と全界面で剥離し、加熱によって半導体素
子を固定用接着層および熱可塑性接着フィルムを介して
被取付体に接着固定して開用する。The film of the present invention fixes a semiconductor wafer to a wafer fixing adhesive layer, and after dividing the fixing adhesive layer and thermoplastic resin film together with the wafer during dicing, peels off the entire interface between the thermoplastic adhesive film and the viscous M layer, and then heats the film. Accordingly, the semiconductor element is adhesively fixed to the object to be mounted via the fixing adhesive layer and the thermoplastic adhesive film, and then put into use.

〈発明の効果〉 本発明によれば、粘着層の上に剥離可能に設けた熱可塑
性接着フィルムと固定用接着ＮＩｔ−介して半導体ウェ
ハを接着固定するようにしたので、半導体素子への分断
時に半導体ウェハを充分な保持力で固定することができ
ると共に、形成した半導体素子を熱可塑性接層フィルム
と共にスムースに剥離することができ、その熱可塑性接
着フィルムを被取付体への固定にそのまま利用すること
ができる。<Effects of the Invention> According to the present invention, since the semiconductor wafer is adhesively fixed via the thermoplastic adhesive film removably provided on the adhesive layer and the fixing adhesive NIT-, it is possible to Semiconductor wafers can be fixed with sufficient holding force, and the formed semiconductor elements can be peeled off smoothly together with the thermoplastic adhesive film, and the thermoplastic adhesive film can be used as is for fixing to the object to be attached. be able to.

ま次０本発明では熱可塑性接着フィルムをピックアップ
時の粘着層との剥離面に設けているので。In the present invention, a thermoplastic adhesive film is provided on the surface from which the adhesive layer is removed during pickup.

剥離性が良好となると共に、ダイボンド時の高温接着強
度の向上が図れる。Not only does the releasability become good, but also the high temperature adhesive strength during die bonding can be improved.

〈実施例〉 以下に本発明の実施例を示し、さらに具体的に説明する
が１本発明の技術的思想を逸脱しない範囲で種々変形で
きるものである。<Examples> Examples of the present invention will be shown below and will be described in more detail, but various modifications can be made without departing from the technical idea of the present invention.

実施例１ 図面に示すように、支持基材４として５０μｍ厚のポリ
塩化ビニル上に、アクリル系共重合物を主成分とするＵ
Ｖ＆化型化層粘着剤層３乾燥厚が３０μｍ厚となるよう
に塗工した。Example 1 As shown in the drawings, U containing an acrylic copolymer as the main component was placed on polyvinyl chloride with a thickness of 50 μm as the supporting base material 4.
The adhesive layer 3 was coated to have a dry thickness of 30 μm.

一万、剥離処理したポリエステルフィルムに。10,000, on a polyester film that has been peeled off.

Ｂステージのエポキシ系ウェハ固定用接着剤層１（ビス
フェノールＡ型エボキン酸無水物）を５μｍ厚となるよ
うに塗工したのち、該接着剤層１の表向ＶＣ２０μ惧厚
のポリエーテルイミド系熱可塑性接着フィルム２（ウル
テム１０００．　ＧＥ社製）全積層した。After applying a B-stage epoxy wafer fixing adhesive layer 1 (bisphenol A type ebochic acid anhydride) to a thickness of 5 μm, a polyetherimide-based heat treatment with a thickness of 20 μm on the surface of the adhesive layer 1 is applied. Plastic adhesive film 2 (Ultem 1000, manufactured by GE) was fully laminated.

次いで、上記粘看剤層３と接着フィルム２とを隣接する
ように貼り合わせ、ポリエステルフィルムを剥離して本
発明のダイシング・ダイボンドフィルムを得た。Next, the adhesive layer 3 and the adhesive film 2 were adhered to each other so as to be adjacent to each other, and the polyester film was peeled off to obtain a dicing/die-bonding film of the present invention.

得られたフィルムのウェハ固定用接着層面に４インチの
ミラーウニハラ６０℃でロール圧着し、２朋角の半導体
素子にダイシングしたところ、チップ飛び等の不良は認
めらｔＬなかつｔ６また。ダイシング後、ＵＶ照射によ
り熱可塑性接着フィルムと粘着層との界面がビックアッ
プ工程にて容易に剥離できた。次いで接着剤層付チップ
を３５０℃にてアロイ−４２フレームにダイボンドし、
その剪断接着力を測定した。その結果、剪断接着力は３
ゆ以上であり、高温時においても充分な接着力を有する
ことが判明した。A 4-inch mirror unicorn was rolled onto the surface of the wafer-fixing adhesive layer of the obtained film at 60°C and diced into 2 square semiconductor devices. No defects such as chip flying were observed. After dicing, the interface between the thermoplastic adhesive film and the adhesive layer could be easily peeled off in a kick-up process by UV irradiation. Next, the chip with the adhesive layer was die-bonded to the alloy-42 frame at 350°C.
The shear adhesive strength was measured. As a result, the shear adhesion force is 3
It was found that the adhesive had sufficient adhesive strength even at high temperatures.

実施例２ 実施例１で用いたポリエーテルイミド系熱可塑性接着フ
ィルムに代えて、ポリエステル系熱可塑性接着フィルム
（エチレングリコール／テレフタル酸／インフタル酸共
重合体Ｔｍ＝２３０℃）を用いた以外は、すべて実施例
１と同様にして本発明のダイシング・ダイボンドフィル
ムを得た。これを実施例１と同様に評価したところ、各
工程における不良は認められず、ダイシング・ダイボン
ドフィルムとして良好なものであることが明らかとなり
几。Example 2 Except that a polyester thermoplastic adhesive film (ethylene glycol/terephthalic acid/inphthalic acid copolymer Tm = 230°C) was used in place of the polyetherimide thermoplastic adhesive film used in Example 1, A dicing die-bonding film of the present invention was obtained in the same manner as in Example 1. When this was evaluated in the same manner as in Example 1, no defects were observed in any of the steps, and it was found that the film was good as a dicing/die-bonding film.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は実施例に示す本発明のダイシング・ダイボンドフ
ィルムの断面図である。The drawing is a cross-sectional view of a dicing die-bonding film of the present invention shown in Examples.

Claims (2)

【特許請求の範囲】[Claims] （１）支持基材上に粘着層、熱可塑性接着フィルムおよ
びウェハ固定用接着層を順次積層してなり、前記粘着層
と熱可塑性接着フィルムが剥離可能状態にて積層されて
いることを特徴とするダイシング・ダイボンドフィルム
。(1) An adhesive layer, a thermoplastic adhesive film, and a wafer fixing adhesive layer are sequentially laminated on a supporting base material, and the adhesive layer and thermoplastic adhesive film are laminated in a releasable state. dicing die bond film. （２）熱可塑性接着フィルムがポリイミド系またはポリ
エステル系フィルムである請求項（１）記載のダイシン
グ・ダイボンドフィルム。(2) The dicing die-bonding film according to claim 1, wherein the thermoplastic adhesive film is a polyimide-based or polyester-based film.
JP29163989A 1989-11-09 1989-11-09 Dicing die-bonding film Expired - Lifetime JP2665383B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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JPH03152942A true JPH03152942A (en) 1991-06-28
JP2665383B2 JP2665383B2 (en) 1997-10-22

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JPH0883881A (en) * 1993-06-21 1996-03-26 Internatl Business Mach Corp <Ibm> Lamination type semiconductor chip structure and its manufacture
US5762744A (en) * 1991-12-27 1998-06-09 Rohm Co., Ltd. Method of producing a semiconductor device using an expand tape
JP2000204332A (en) * 1999-01-08 2000-07-25 Minnesota Mining & Mfg Co <3M> Heat-peeling adhesive composition and bonded structural form
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JP2005183855A (en) * 2003-12-24 2005-07-07 Dow Corning Toray Silicone Co Ltd Sheet for dicing die bonding and method for manufacturing the same
JP2007227575A (en) * 2006-02-22 2007-09-06 Furukawa Electric Co Ltd:The Dicing/die bonding sheet for laser dicing
US7399683B2 (en) 2002-06-18 2008-07-15 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device
JP2008211224A (en) * 2008-03-17 2008-09-11 Sumitomo Bakelite Co Ltd Die attaching film with dicing sheet function and manufacturing method of semiconductor using the same
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US5762744A (en) * 1991-12-27 1998-06-09 Rohm Co., Ltd. Method of producing a semiconductor device using an expand tape
JPH0883881A (en) * 1993-06-21 1996-03-26 Internatl Business Mach Corp <Ibm> Lamination type semiconductor chip structure and its manufacture
EP0977254A3 (en) * 1998-07-22 2001-02-07 Nitto Denko Corporation Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same
US6623594B1 (en) 1998-07-22 2003-09-23 Nitto Denko Corporation Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same
JP2000204332A (en) * 1999-01-08 2000-07-25 Minnesota Mining & Mfg Co <3M> Heat-peeling adhesive composition and bonded structural form
JP2002217437A (en) * 2001-01-23 2002-08-02 Sony Corp Manufacture of thin-film semiconductor element
JP2003031768A (en) * 2001-07-19 2003-01-31 Nec Corp Semiconductor device and its manufacturing method
JP4649792B2 (en) * 2001-07-19 2011-03-16 日本電気株式会社 Semiconductor device
US7399683B2 (en) 2002-06-18 2008-07-15 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device
WO2005062374A1 (en) * 2003-12-24 2005-07-07 Dow Corning Toray Co., Ltd. Dicing/die bonding film and method of manufacturing the same
JP4536367B2 (en) * 2003-12-24 2010-09-01 東レ・ダウコーニング株式会社 Sheet for dicing die bonding and manufacturing method thereof
JP2005183855A (en) * 2003-12-24 2005-07-07 Dow Corning Toray Silicone Co Ltd Sheet for dicing die bonding and method for manufacturing the same
JP2007227575A (en) * 2006-02-22 2007-09-06 Furukawa Electric Co Ltd:The Dicing/die bonding sheet for laser dicing
JP4690907B2 (en) * 2006-02-22 2011-06-01 古河電気工業株式会社 Dicing die bond sheet for laser dicing
JP2011515839A (en) * 2008-03-14 2011-05-19 チェイル インダストリーズ インコーポレイテッド Composite function tape for semiconductor package and method of manufacturing semiconductor device using the same
JP4661889B2 (en) * 2008-03-17 2011-03-30 住友ベークライト株式会社 Die attach film with dicing sheet function and method for manufacturing semiconductor device using the same
JP2008211224A (en) * 2008-03-17 2008-09-11 Sumitomo Bakelite Co Ltd Die attaching film with dicing sheet function and manufacturing method of semiconductor using the same
WO2015029723A1 (en) * 2013-08-30 2015-03-05 Jsr株式会社 Adherend recovery method, adherend recovery device, gas generation membrane, and resin composition
JPWO2015029723A1 (en) * 2013-08-30 2017-03-02 Jsr株式会社 Adherent recovery method, adherend recovery device, gas generating film, and resin composition
US10415011B2 (en) 2013-08-30 2019-09-17 Jsr Corporation Adherend recovery method, adherend recovery apparatus, gas-generating film and resin composition
JP2017217865A (en) * 2016-06-09 2017-12-14 積水化学工業株式会社 Laminated sheet and method for producing semiconductor device
CN113410164A (en) * 2021-06-15 2021-09-17 西安微电子技术研究所 Single-chip DAF adhesive tape die bonding method
CN113410164B (en) * 2021-06-15 2024-04-09 珠海天成先进半导体科技有限公司 Single-chip DAF adhesive tape crystal bonding method

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