JPH024963A - Ion plating apparatus - Google Patents

Abstract

PURPOSE:To form simultaneously and continuously a uniform film on both surfaces of a band-shaped material by disposing hollow cathodes, evaporation sources, and focusing coils in a specific manner on both sides of the vertical pass line of a band- shaped material in the title apparatus by an HCD method by using hollow cathodes. CONSTITUTION:A steel sheet 1 is passed in the direction of an arrow and successively introduced via differential pressure chambers 2a-2d into a vacuum tank 13, and the pass line of the steel sheet 1 is maintained in the vertical direction by means of guide rolls 4a-4d in the tank 13. By using this pass line as an axis of symmetry, a couple of crucibles 5, 5', in which evaporation sources 6, 6' are placed, and a couple of HCD guns 7, 7' are disposed on both sides of the above pass line. Further, forcusing coils 8, 8' forming transfer sources for vapors from the evaporation sources 6, 6', respectively, between the crucibles 5, 5' and the close vicinities of both surfaces of the steel sheet 1 are provided so that they are turned down in the upper part, respectively, and respective upper openings of them are allowed to face the steel sheet 1. By this apparatus, plasma vapor currents can be confined within the focusing coils up to the close vicinities of both surfaces of the steel sheet, by which simultaneous vapor deposition onto both surfaces of the steel sheet can be attained.

Description

[Detailed Description of the Invention] (Industrial Application Field) This invention relates to an ion plating apparatus, particularly a so-called H CD (Hollow Cathode Dis).
The present invention relates to an ion plating apparatus that can form a film with particularly excellent uniformity and adhesion using a charge method with high adhesion efficiency.

(Prior Art) In recent years, ion plating technology using plasma has made remarkable progress and is being widely used for magnetic recording thin films, various abrasion-resistant and corrosion-resistant coatings, and even decorative coatings.

Conventionally, plasma coating methods include magnetron sputtering and EB (Electron Beam).
)+RF (Radio Frequency) method, plasma CVD method, etc., and recently, ion plating using a multi-arc method using a vacuum arc and an HCD method has been carried out.

Among such plasma coatings, the HCD method in particular has a high ionization rate, resulting in a good film quality, and a relatively fast film formation rate, so it is mainly used for ceramic coating of small items such as ornaments and tools. was.

In addition, when applying continuous double-sided coating on the surface of a strip having a large surface area, such as a thin steel plate, on an industrial scale using the ion plating method, for example, Japanese Patent Application Laid-Open No. 62-40
As disclosed in Japanese Patent No. 367, a procedure is generally adopted in which one side of a steel plate is coated and then the other side is coated.

However, between both surfaces, the amount of microelastic strain that occurs near the surface of the steel plate due to coating may differ, or due to slight coating unevenness, for example, elongation (belly elongation) in the center of the steel plate.
This causes deformation such as elongation of the ends (selvage elongation), which significantly reduces the product value.

On the other hand, in JP-A-62-1820, JP-A-62-1821, and JP-A-62-1821, nitrides (for example, TiN It has been pointed out that when manufacturing unidirectional silicon steel sheets with ultra-low core loss by forming a tensile coating of carbides and other materials, slight coating unevenness on both sides of the #plate has an adverse effect on the magnetic properties. .

(Problems to be Solved by the Invention) Therefore, it is an object of the present invention to provide an ion plating apparatus that solves the various problems described above and enables continuous film formation on both sides of a strip at the same time.

(Means for Solving the Problems) The present invention includes a crucible containing an evaporation source in a vacuum chamber,
In an HCD method ion plating apparatus in which a hollow cathode for plasma generation and a reaction gas inlet are arranged, a plurality of guide rolls are installed to hold a pass line of a strip to be introduced into a vacuum chamber in a vertical direction, With the pass line of the strip as the axis of symmetry, a pair of hollow cathodes and a crucible are arranged on both sides of the pass line, and a focusing coil forming a vapor transfer path is installed between the crucible and the vicinity of the pass line, This is an ion plating apparatus characterized by performing continuous film formation on both sides of a strip at the same time.

Now, an ion plating apparatus according to the present invention is schematically shown in FIG. In the figure, 1 is the steel plate unwound from the coil (
Thread the plate in the direction of the arrow in the figure with a belt-shaped material), and
are introduced into the vacuum chamber 3 one after another. Reference numerals 4a to 4d are guide rolls for threading disposed within the vacuum chamber 3, and serve to maintain the pass line of the steel plate 1 vertically at the vapor deposition processing position within the vacuum chamber 3. 5°5' is an evaporation source 6,6 such as Ti, for example.
', 7.7' is approximately 90° in this example
Bent type HCD gun, 8,8' crucible 5.5
A focusing coil that forms a path for the vapor to travel from the evaporation sources 6, 6' from 5' to the surface of the steel plate 1, guides the vapor flow from the crucible 5.5' onto both surfaces of the steel plate 1, and simultaneously In order to enable vapor deposition, the focusing coils 8.8' are bent upward, so that the upper openings of the focusing coils 8, 8' face the steel plate 1. Furthermore, 9.9' is a reaction gas inlet, 10 is an exhaust port for drawing a high vacuum, and lla to lid are differential pressure chambers on the outlet side.

(Function) In the ion plating apparatus with the above configuration, one pass line of the steel plate at the vapor deposition processing position in the vacuum chamber 3 passes in the vertical direction, and on both sides there are crucibles 5° 5', HCD gamma,
7' and the focusing coil 8° 8' are arranged in such a manner that the plasma vapor flow can be confined within the focusing coil up to the immediate vicinity of both surfaces of the steel sheet, and simultaneous vapor deposition on both surfaces of the steel sheet can be achieved. Therefore, the elastic strain distribution on both sides of the steel plate can be made almost the same, and it is possible to prevent deformation due to edge elongation or belly elongation of the steel plate due to film formation, or deformation due to the influence of uneven heat.

The steel plate coated as described above is guided into the atmosphere through guide rolls 4c and 4d, through differential pressure chambers 11a to 11lid whose degree of vacuum is gradually lowered, and wound into a coil.

(Example) Actual 1" Low C0,044wtχ (hereinafter simply indicated as %), Si 3
．． 36%, Mn 0.066%, Mo 0.013%,
A silicon steel slab containing 0.020% Se, 0.026% Sb O, and the remainder is essentially Fe is hot-rolled.
, 8 mm thick, and then cold-rolled twice with intermediate annealing at 950° C. for 3 minutes to obtain a final cold-rolled sheet with a thickness of 0.20 mm.

After that, after decarburization and primary recrystallization annealing in wet hydrogen at 820°C, MgO (35%) and A 1
After applying a slurry of an annealing separator mainly composed of 203 (60%) and Zr0z (5%), it was heated at 850"C for 50
After secondary recrystallization annealing for 8 hours in dry H7 at 1180″C
A time purification process was performed.

Thereafter, oxides on the surface of the steel plate were removed by pickling treatment, and then electrolytic polishing was performed to obtain a mirror surface with a center line average roughness Ra of 0.08 μm.

Thereafter, using the ion plating apparatus (suitable example) of the present invention shown in FIG. 1, the line speed was 10 m/min, and T
An iN film was formed to a thickness of 0.8 μm.

The plasma generation conditions at this time were an acceleration voltage of 75V and a current of 1
The excitation conditions for the focusing coil were 5 V and 500 A, and the degree of vacuum was I x 10-' torr.

For comparison, a conventional ion booting device (line speed: 10 m/min, plasma generation condition near 5
V, 1500A, degree of vacuum: 8 Xl0-'torr)
(conventional example), or the method disclosed in JP-A-62-69506 (line speed 15 m/min, plasma generation condition: 9QkV,
A case (comparative example) in which the vapor deposition process was performed at 5A, degree of vacuum: 3 Xl0-'torr) was also investigated.

Some of the obtained products were further coated with an insulating film containing phosphate and coidal silica as main components on the TiN film, and then subjected to strain relief annealing at 800°C for 2 hours.

The magnetic properties, adhesion efficiency, and presence or absence of deformation of each product thus obtained are summarized in Table 1.

As is clear from Table 1, Nα1 according to the present invention had extremely good magnetic properties before and after strain relief, and an investigation of the film composition showed that it was a good film consisting only of TiN. Furthermore, the adhesion efficiency and the deformation of the product showed much better results than Nα2 and Nα3. Especially No. 3 T by EB method
When forming an iN film, the film contained a small amount of Ti2N and Ti, which deteriorated the magnetic properties after strain relief annealing.

Implementation I CO, 041%, Mn 0.33%, PO, 009%
, SO,0011% low carbon cold rolled steel sheet (0,
After degreasing the steel plate (25 mm thick), a continuous ion plating device (line speed 12 m/win, plasma generation conditions: accelerating voltage 80 V, accelerating current 1500 A, vacuum degree: 6 Xl0-'torr) as shown in Fig. Ti(
CN) was formed to have a thickness of about 1.2 μm. At that time, there was no deformation of the steel plate and a good product could be obtained.

(Effects of the Invention) According to the present invention, a uniform vapor deposition film with excellent adhesion can be simultaneously formed on both sides of a strip, and the range of application of ion plating can be further expanded.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an ion plating apparatus according to the present invention. 1... Steel plates 2a to 2d, lla to 11d - Differential pressure chamber 3...
Vacuum chamber 4a to 4d... Guide roll 5.
5'... Crucible 6,6'... Evaporation source 7.7'
...HCD gun 8.8'...Focusing coil 9.9'
...Reactive gas inlet 10...Exhaust port

Claims (1)

[Claims] 1. An HCD method ion plating apparatus in which a crucible containing an evaporation source, a hollow cathode for plasma generation, and a reaction gas inlet are arranged in a vacuum chamber, comprising: A plurality of guide rolls are installed to hold the pass line of the strip to be introduced in the vertical direction, and with the pass line of the strip as the axis of symmetry, a pair of hollow cathodes and a crucible are placed on both sides of the pass line, and a crucible is placed on each side of the pass line. An ion plating device characterized by installing a focusing coil that forms a vapor transfer path between the point and the pass line, and performing continuous film formation on both sides of a strip at the same time.