JPH02101159A - Thin film forming device - Google Patents

Abstract

PURPOSE:To allow the independent control of respective cluster beam sources by providing respective shielding pipes to plural pieces of film thickness gages in such a manner that only the prescribed cluster beams arrive at the prescribed film thickness gages, thereby forming the thin film of a desired mixing ratio. CONSTITUTION:The respective cluster beams 4 generated by the cluster beam generating sources 8, 9 collide against the surface of a substrate 10 and deposit thereon by evaporation, thus forming the film. The film thickness gages 14, 15 are mounted adjacently to the substrate 10 and the irradiation quantity of the respective materials to be deposited by evaporation are measured by receiving the irradiation of the cluster beams. The shielding pipes 16, 17 are respectively mounted to these film thickness gages 14, 15 and the cluster beam 4 from the generating source 8 arrives at the film thickness gage 14 but does not arrive at the film thickness gage 15. The cluster beam 4 from the generating source 9 arrives at the film thickness gage 15 but does not arrive at the film thickness gage 14. The cluster beams 4 from the respective generating sources 8, 9 are respectively separately measured in this way and the generating sources 8, 9 are independently controlled, by which the thin film having the desired mixing ratio is obtd.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a thin film forming apparatus for forming a thin film on a substrate, a special type K, and a thin film forming apparatus for forming a high performance thin film by vapor deposition of a cluster ion beam. be.

[Conventional technology]

Fig. 2 shows a conventional film forming apparatus similar to that shown in, for example, Japanese Patent Publication No. 54-9592. has a small hole at the top to accommodate the vapor deposition material. Crucible (2)
The filament (3) placed around the outer periphery of the filament (3) obtains a predetermined potential and emits electrons, and the filament (2) collides with the K electrons to heat the deposited material inside the filament (3). The vaporized material to be vaporized by this heating is ejected from the small hole (2) and becomes a cluster beam (4). Ruri has a grid (5) placed above the grid (2), and a predetermined potential is applied between the grid (5) and the filament (6) placed surrounding the grid (5) to draw electric power. 5) Partially ionize the passing cluster beam (4). An accelerating electrode (7) located above the grid (5) obtains a predetermined potential and accelerates the ionized cluster beam (4). Crucible (2), filament (3), (6),
A cluster beam generation source (8) is formed by a grid (5), an accelerating electrode (7), and the like.

The cluster beam source (9) is the same as the cluster beam source (8), but contains a different deposition material. The substrate (10) is a cluster beam source (8)
, (91 is placed above the substrate holder (91), and the deposition material is deposited by the impact of the cluster beam (4).
11) A predetermined position ftK is maintained from K. (12).

(13) is the cluster beam source (8), (91
and the cluster beam (4).
) is a shutter that controls the opening and closing of the passage of the cutoff 1 of the vacuum chamber (1), and is opened and closed by a vacuum seal section and a rotary driver's (not shown) K from the outside of the vacuum chamber (1).

Film thickness meter (
14).

(15) receives irradiation with each cluster beam (4) from the cluster beam generation source (81, (9)) and measures the amount of irradiation of each vapor deposited substance.

Next, the operation when depositing K on the substrate (10) will be explained. After evacuating the vacuum chamber (1) to a predetermined degree of vacuum, the filaments (3) and (6) of the cluster beam generation sources (8) and (9), the grid (5), and the accelerating electrode (7) K, respectively. Apply a predetermined potential. At this time, the shutters (12) and (13) are in the closed position blocking the cluster beam (4). The crucible (2) is heated by electrons from the filament (3), and the deposition material contained therein is vaporized and ejected from the small hole of the crucible (2), forming a cluster beam (4). The cluster beam (4) passes through the grid (5) and is ionized, accelerated by the accelerating electrode (7) and directed toward the substrate (10). When the setting of predetermined conditions such as acceleration voltage, ionization voltage, and heating power is completed, the shutter (12)
, (13) in the open state, the cluster beam (4)
is deposited by colliding with the substrate (10) K and film thickness meter (1)
4), (15) K is also reached. Film thickness meter (14), (15
) can be measured by converting the evaporation film thickness and evaporation rate of the evaporation substance deposited on the substrate (10)K. When vapor deposition is completed under predetermined conditions, the shutter (12)
, (11) to the closed position to interrupt the cluster beam (4).

[Problem to be solved by the invention]

Since the conventional thin film forming apparatus is configured as described above, each film thickness measurement is irradiated with cluster beams from both cluster beam generation sources. The disadvantage was that it was not possible to independently measure the amount generated, and it was not possible to independently control each cluster beam generation source based on this measurement value to form a thin film with the desired mixture ratio. .

This invention was developed to solve the above-mentioned problem, and it is possible to form a thin film with a desired mixing ratio by independently controlling the beam generation amount of each of the five cluster beam generation sources. The purpose is to obtain a thin film forming device.

[Means to solve the problem]

In the thin film forming apparatus according to the present invention, a shielding pipe is provided immediately before each film thickness gauge.

[For production]

In this invention, the cluster beam from the other cluster beam generation source is shielded by the shielding pipe provided immediately before the film thickness meter, and the beam generation amount of each cluster beam generation source is measured independently.

〔Example〕

FIG. 1 shows an embodiment of the present invention, and in the figure, reference numerals (1) to (15) are the same parts as in FIG. 2. (16L (17) is the film thickness meter (14), (1
5), and the axis of the shield pipe (16) is located just before the cluster beam source (8).
) coincides with the straight line connecting the brim (2) and the film thickness gauge (14). Similarly, the axis of the shielding pipe (17) coincides with the straight line connecting the bottom of the cluster beam source (9) and the film thickness meter (15).

With the above configuration, the shutter (12L (13'l) is in the closed position and the cluster beam generation source (8) is closed.

A predetermined potential is applied to each of (9) in the same way as in the conventional device. The crucible (2) is heated by the electrons from the filament (3), and the deposited material contained therein is ejected from the small holes of the crucible where it is vaporized, forming a cluster beam (4). The cluster beam (4) passes through the grid (5), is ionized, is accelerated by the accelerating electrode (7), and heads toward the substrate. When the shutters (12) and (13) are opened when the predetermined conditions have been set, each cluster beam (4) heads toward the substrate (10) and
10) The film is deposited by bombarding the film with a film thickness of fj (1).
4'l, (15) K also reaches 1. At this time, the Tarastar star beam (4) from the cluster beam source (8) is shielded by the shielding pipe (17),
It does not reach the film thickness meter (15).

The cluster beam (4) from the cluster beam source (9) similarly passes through the shielding pipe (17) and reaches the film thickness 1tt (15), but it passes through the shielding pipe (15) to the film thickness meter (14). 16) is blocked and cannot be reached.

In addition, in the above embodiment, the case where there are two cluster beam generation sources was explained, but the case where there are two or more cluster beam generation sources is also described.
[Effects of the Invention] As described above, according to the present invention, a shielding pipe is installed immediately before each film thickness gauge. , because only the cluster beam from a predetermined cluster beam source can reach a predetermined film thickness gauge, the amount of cluster beam generated by each cluster beam source can be measured independently, and this needle measurement value Since the cluster beam generation I of each cluster beam generation source K can be independently controlled based on K, a thin film with a desired mixing ratio can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a front sectional view of an embodiment of the present invention, and FIG. 2 is a front sectional view of a conventional thin film forming apparatus. (1)...Vacuum chamber, (2)...Ruha, (4)...Cluster beam, (7)...Acceleration electrode, (8)...
91...Cluster beam source, (10)...Substrate, (14), (15)...i float meter, (16), (17)
・Shielding pipe. In each figure, the same reference numerals indicate the same or corresponding parts. vacuum chamber

Claims (1)

[Scope of Claims] A plurality of cluster beam generation sources disposed in a vacuum chamber and ionizing clusters of vapor deposition material ejected from a small hole of a crucible and accelerating them by an accelerating electrode; a plurality of film thickness gauges each measuring the amount of irradiation of the vapor deposition material upon receiving cluster beam irradiation; and a plurality of film thickness gauges each disposed immediately before each of the film thickness gauges, the cluster beam being emitted from a predetermined cluster beam generation source. a plurality of shielding pipes that allow only the evaporation material to reach the predetermined film thickness gauge;