JPH01244426A - Reflection type liquid crystal display device - Google Patents
Reflection type liquid crystal display deviceInfo
- Publication number
- JPH01244426A JPH01244426A JP63072443A JP7244388A JPH01244426A JP H01244426 A JPH01244426 A JP H01244426A JP 63072443 A JP63072443 A JP 63072443A JP 7244388 A JP7244388 A JP 7244388A JP H01244426 A JPH01244426 A JP H01244426A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- picture element
- reflective
- display device
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000031700 light absorption Effects 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims abstract 3
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910019336 PrMnO3 Inorganic materials 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ブI」シェクション表示デバイスに利用する
アクティブ素子を有した反射型液晶表示デバイスに関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a reflective liquid crystal display device having an active element for use in a B-I section display device.
従来の技術
近年、アクティブ素子を利用した液晶表示デバイスはボ
ゲソトテレヒまたは情報端末として利用されるようにな
ってきた。BACKGROUND OF THE INVENTION In recent years, liquid crystal display devices using active elements have come to be used as television or information terminals.
以下に従来の反射型液晶表示デバイスについて説明する
。A conventional reflective liquid crystal display device will be explained below.
第2図は従来の反射型液晶表示デバイスの断面図であり
、1は絶縁基板、2は配線電極、3ばスイッチング素子
、4は絶縁体層、5は反射画素電極、6は液晶層、7は
対向共通電極、8は対向透明基板、9はブランクマI・
リソクスである。FIG. 2 is a cross-sectional view of a conventional reflective liquid crystal display device, in which 1 is an insulating substrate, 2 is a wiring electrode, 3 is a switching element, 4 is an insulator layer, 5 is a reflective pixel electrode, 6 is a liquid crystal layer, and 7 is a cross-sectional view of a conventional reflective liquid crystal display device. 8 is a counter common electrode, 8 is a counter transparent substrate, and 9 is a blank bearer I.
It's lithox.
以下のように構成された反射型液晶表示デハイスについ
て、以下その動作について説明する。The operation of the reflective liquid crystal display device configured as follows will be described below.
まず、スイッチング素子3がオン状態になると反射画素
電極5に電流が流れる。ごれにより、反射画素電極5と
対向共通電極7に挟まれた液晶層6に電圧が印カロされ
、液晶が動作する。このとき、表示を見やすくするため
の光は対向透明電極側から照射され、反射画素電極5で
入射光は反射される。ここで、光は液晶層6を通る際に
偏光され、偏光されなかった画素との間にコンI・ラス
I・の差が生じ、画像が得られる。対向透明電極基板B
上のブラックマトリックス9は反射画素電極5部分以外
で生しる色むらを隠すためのものである。First, when the switching element 3 is turned on, a current flows through the reflective pixel electrode 5. Due to the dirt, a voltage is applied to the liquid crystal layer 6 sandwiched between the reflective pixel electrode 5 and the opposing common electrode 7, and the liquid crystal operates. At this time, light for making the display easier to see is irradiated from the opposite transparent electrode side, and the incident light is reflected by the reflective pixel electrode 5. Here, the light is polarized when passing through the liquid crystal layer 6, and a difference in con I and las I occurs between the light and the pixels that are not polarized, and an image is obtained. Opposing transparent electrode substrate B
The upper black matrix 9 is used to hide color unevenness that occurs in areas other than the reflective pixel electrode 5 portion.
発明が解決しようとする課題
しかしながら」1記の従来の構成では、光が液晶層側か
ら反射電極間の絶縁層を通ってT P T内部に進入す
るため、スイッチング素子に光が作用して、スイッチン
グ素子を構成する半導体層の電気抵抗を減少させる(光
伝導)。これにより画素電極と対向共通電極とに蓄えら
れた電荷かスイッチング素子を通して漏れ、結果的に液
晶の配向が変化し2てZlンI〜ラストの低下をもたら
すという欠点を有していた。Problems to be Solved by the Invention However, in the conventional configuration described in item 1, since light enters the inside of the TPT from the liquid crystal layer side through the insulating layer between the reflective electrodes, the light acts on the switching element. Reduces the electrical resistance of the semiconductor layer that makes up the switching element (photoconduction). This has the disadvantage that the charge stored in the pixel electrode and the opposing common electrode leaks through the switching element, resulting in a change in the orientation of the liquid crystal, resulting in a decrease in ZI-last.
本発明は」−記従来の問題点を解決するものでデイスプ
レィ画面のコントラス1−低下を解消するとともにシラ
ツクマトリックスか同時に形成するごとができ、工程の
簡略化も実現するごとのてきる反η・]型液晶表示デバ
イスを提供することを目的とする。The present invention solves the problems of the conventional art as described above, and eliminates the decrease in contrast of a display screen, and also enables the formation of a silk matrix at the same time, thereby simplifying the process. The purpose of the present invention is to provide a type of liquid crystal display device.
課題を解決するだめの手段
この目的を達成するために本発明の反射型液晶表示デバ
イスは、反射画素電極とこれに隣接する反射画素電極の
間の絶縁層」−に設けられた光吸収係数の高い絶縁物か
ら構成されている。Means for Solving the Problem In order to achieve this object, the reflective liquid crystal display device of the present invention has a light absorption coefficient that is provided in an insulating layer between a reflective pixel electrode and an adjacent reflective pixel electrode. Constructed from highly insulating material.
作用
この構成によって、入射光及び反射光か反射電極間の絶
縁層からアレイ内部に進入することを防ぎ、スイッチン
グ素子の光伝導が原因となる漏れ電?素を防くことがで
きる。Function: This structure prevents incident light and reflected light from entering the array through the insulating layer between the reflective electrodes, and prevents leakage current caused by photoconduction of the switching elements. You can prevent the elements.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例における反射型液晶表示デバ
イスの断面構造を示すものである。第1図において、1
1は絶縁基板としてガラス基板、12は配線電極、13
はスイッチング素子として薄膜トランジスタおよび補助
容M(]”FT)、14は絶縁体層として非晶質窒化ケ
イ素膜、15は反射画素電極、16は液晶層、17は対
向共通電極として、スパッタにより成膜されたIT○で
あり、1Bは対向透明基板としてガラス基板、19は黒
色絶縁体として、スパッタにより形成されたPrMn○
3膜である。FIG. 1 shows a cross-sectional structure of a reflective liquid crystal display device according to an embodiment of the present invention. In Figure 1, 1
1 is a glass substrate as an insulating substrate, 12 is a wiring electrode, 13
14 is an amorphous silicon nitride film as an insulator layer, 15 is a reflective pixel electrode, 16 is a liquid crystal layer, and 17 is a counter common electrode, which are formed by sputtering. 1B is a glass substrate as a counter transparent substrate, 19 is a black insulator, and PrMn○ is formed by sputtering.
There are 3 membranes.
さらに補助容量は配線電極12上に形成されている。Further, an auxiliary capacitor is formed on the wiring electrode 12.
以上のように構成された反射型液晶表示デバイスについ
て、その動作は従来の動作と同様である。The operation of the reflective liquid crystal display device configured as described above is similar to that of a conventional device.
以」−のように本実施例によれば、反射画素電極間の絶
縁層」二に黒色絶縁体P r M n O3で埋めるこ
とにより、光のT F T側内部への進入を抑えること
ができ、スイッチング素子の光伝導による漏れ電流を防
くことができる。As shown in the following, according to this embodiment, by filling the insulating layer 2 between the reflective pixel electrodes with a black insulator PrMnO3, it is possible to suppress the light from entering the inside of the TFT side. Therefore, leakage current due to photoconduction of the switching element can be prevented.
また、黒色絶縁体をTFT(!!lI基板の反射画素電
極間に形成することにより、対向透明基板上にフラソク
マトリノクスの形成工程が削減でき、T FT側基板と
対向透明基板とのアレイメン(・が不用となり、製造7
L程の簡略化が図れる。In addition, by forming a black insulator between the reflective pixel electrodes of the TFT (!!lI substrate), the process of forming furasocmatrinox on the opposing transparent substrate can be reduced, and the array member between the TFT side substrate and the opposing transparent substrate can be reduced. (・ is no longer needed, and production 7
Simplification to the extent of L can be achieved.
なお、黒色絶縁体としてP r M n O3という酸
化物を用いたが、光吸収が高く、絶縁性のよい有機物で
もよい。Although an oxide called P r M n O3 was used as the black insulator, an organic material with high light absorption and good insulation properties may be used.
発明の効果
以J−のように本発明は反射型液晶表示デバイスにおい
て、反射画素電極とこれδこ隣接する反射画素電極の間
の絶縁体層上に光吸収効果の高い絶縁物を形成すること
により、液晶層側からの光か絶縁層を通ってアレイ内部
へ進入することを防ぎ、スイッチング素子が光伝導によ
り抵抗が下がることによる漏れ電流を防くごとができる
。更に、対+i1+透明基板側に形成していたフランク
マドす・ノクスを不要にすることができ、製造工程の簡
略化に大きく貢献し、〕」−産のコストを低減できるな
ど、数々の優れた効果を得ることのできる反射型液晶表
示デバイスを実現できるものである。Effects of the Invention As described in J-, the present invention provides a reflective liquid crystal display device in which an insulator having a high light absorption effect is formed on an insulating layer between a reflective pixel electrode and an adjacent reflective pixel electrode. This prevents light from the liquid crystal layer side from entering the inside of the array through the insulating layer, and prevents leakage current due to a decrease in resistance of the switching element due to photoconduction. Furthermore, it is possible to eliminate the need for the flank mask formed on the transparent substrate side, greatly contributing to the simplification of the manufacturing process, and reducing production costs. Accordingly, it is possible to realize a reflective liquid crystal display device that can obtain effects.
第1図は本発明の一実施例におりる反射型液晶表示デハ
・イスの断面図、第2図は従来の反射型液晶表示デバイ
スを示す断面ばである。
11・・・・カラス基板、12・ 配線電極、13・・
・・T F T、14・・・・非晶質窒化ケイ素膜層、
15・・・反射画素電極、16・・・・・液晶層、17
・・・対向共通電極、18・・・・対向ガラス基板、]
9・・P r M n O3膜層。FIG. 1 is a cross-sectional view of a reflective liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a conventional reflective liquid crystal display device. 11...Crow board, 12. Wiring electrode, 13...
... T F T, 14 ... amorphous silicon nitride film layer,
15... Reflective pixel electrode, 16... Liquid crystal layer, 17
. . . Opposing common electrode, 18 . . . Opposing glass substrate, ]
9...P r M n O3 film layer.
Claims (4)
れている反射画素電極群と前記反射画素電極に信号を供
給するためのスイッチング素子群とを有した基板と、液
晶を介して一定の間隔を有して前記基板と対向し、共通
電極を有している基板とで構成されており、前記反射画
素電極とこれに隣接する反射画素電極の間の絶縁層上に
設けられた光吸収係数の高い絶縁物とを備えたことを特
徴とする反射型液晶表示デバイス。(1) A substrate having a group of reflective pixel electrodes arranged in a matrix to display a liquid crystal and a group of switching elements for supplying signals to the reflective pixel electrodes, and a substrate having a set of reflective pixel electrodes arranged in a matrix to display a liquid crystal, and a substrate having a group of switching elements for supplying signals to the reflective pixel electrodes; and a substrate facing the substrate and having a common electrode, and a substrate having a light absorption coefficient provided on an insulating layer between the reflective pixel electrode and an adjacent reflective pixel electrode. A reflective liquid crystal display device characterized by having a high insulating material.
ド、非線形スイッチング素子で形成されていることを特
徴とする請求項(1)記載の反射型液晶表示デバイス。(2) The reflective liquid crystal display device according to claim (1), wherein the switching element is formed of a thin film transistor, a diode, or a nonlinear switching element.
ことを特徴とする請求項(2)記載の反射型液晶表示デ
バイス。(3) The reflective liquid crystal display device according to claim (2), wherein a plurality of switching elements are formed in each pixel.
れていることを特徴とする請求項(1)記載の反射型液
晶表示デバイス。(4) The reflective liquid crystal display device according to claim (1), wherein an auxiliary capacitor is formed in each display pixel of the reflective pixel electrode group.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63072443A JPH0833539B2 (en) | 1988-03-25 | 1988-03-25 | Reflective liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63072443A JPH0833539B2 (en) | 1988-03-25 | 1988-03-25 | Reflective liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01244426A true JPH01244426A (en) | 1989-09-28 |
JPH0833539B2 JPH0833539B2 (en) | 1996-03-29 |
Family
ID=13489436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63072443A Expired - Lifetime JPH0833539B2 (en) | 1988-03-25 | 1988-03-25 | Reflective liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0833539B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997043781A3 (en) * | 1996-05-14 | 1998-02-26 | Micron Display Tech Inc | Praseodymium-manganese oxide layer for use in field emission displays |
US6413577B1 (en) | 1996-05-14 | 2002-07-02 | Micron Technology, Inc. | Process for operating a field emission display with a layer of praseodymium-manganese oxide material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627114A (en) * | 1979-08-10 | 1981-03-16 | Canon Inc | Liquid crystal display cell |
JPS5677887A (en) * | 1979-11-30 | 1981-06-26 | Citizen Watch Co Ltd | Liquid crystal display unit |
JPS61109487U (en) * | 1984-12-20 | 1986-07-11 |
-
1988
- 1988-03-25 JP JP63072443A patent/JPH0833539B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627114A (en) * | 1979-08-10 | 1981-03-16 | Canon Inc | Liquid crystal display cell |
JPS5677887A (en) * | 1979-11-30 | 1981-06-26 | Citizen Watch Co Ltd | Liquid crystal display unit |
JPS61109487U (en) * | 1984-12-20 | 1986-07-11 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997043781A3 (en) * | 1996-05-14 | 1998-02-26 | Micron Display Tech Inc | Praseodymium-manganese oxide layer for use in field emission displays |
US6413577B1 (en) | 1996-05-14 | 2002-07-02 | Micron Technology, Inc. | Process for operating a field emission display with a layer of praseodymium-manganese oxide material |
Also Published As
Publication number | Publication date |
---|---|
JPH0833539B2 (en) | 1996-03-29 |
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