JPH01198087A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01198087A JPH01198087A JP63023260A JP2326088A JPH01198087A JP H01198087 A JPH01198087 A JP H01198087A JP 63023260 A JP63023260 A JP 63023260A JP 2326088 A JP2326088 A JP 2326088A JP H01198087 A JPH01198087 A JP H01198087A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- film
- semiconductor layer
- compound semiconductor
- adhesion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000001464 adherent effect Effects 0.000 abstract 4
- 230000000694 effects Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
導体装置に係り、特に誘電体膜の剥離防止に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductor device, and particularly to prevention of peeling of a dielectric film.
第２図は”ＩｎＧａＡｓＰ Ｐ−５（１８ＳＴＲＡＴＥ
ＬＡＳＥＲ５” ＪＯυ−ＲＮＡＬ ＯＦ ＬＩＧ）
ＩＴＷＡＶＥ ＴＥＣＮＯＬＯＧＹ、 ＶＯＬ、ＬＴ−
３，ＮＯ，５゜０ＣＴＯＢＥＲ１９８５に示された従来
の半導体発光装置を示す断面図である。Figure 2 shows “InGaAsP P-5 (18STRATE
LASER5” JOυ-RNAL OF LIG)
ITWAVE TECNOLOGY, VOL, LT-
3, NO, 5°0 CTOBER 1985 is a cross-sectional view showing a conventional semiconductor light emitting device.
図において、１は化合物半導体層で、最上層にはＩｎＧ
ａＡｓＰ層が形成されている。２は発光領域で、三日月
状に形成されている。３は５ｉｎ２膜等の誘電体膜で、
半導体発光装置の電気的短絡を防止する。４はｎ電極、
５はｐ電極である。In the figure, 1 is a compound semiconductor layer, and the top layer is InG.
An aAsP layer is formed. 2 is a light emitting region formed in a crescent shape. 3 is a dielectric film such as a 5in2 film,
Preventing electrical short circuits in semiconductor light emitting devices. 4 is an n-electrode,
5 is a p-electrode.
次に動作について説明する。Next, the operation will be explained.
ｎおよびｐ電極４．５間に電圧を印加すると、電流は誘
電体膜３および電流阻止構造により狭窄され発光領域２
に注入される。このとき、発光領域２の組成に応じて一
定の波長の光が発光領域２より出射される。When a voltage is applied between the n and p electrodes 4.5, the current is constricted by the dielectric film 3 and the current blocking structure and passes through the light emitting region 2.
is injected into. At this time, light of a certain wavelength is emitted from the light emitting region 2 depending on the composition of the light emitting region 2.
（発明が解決しようとする課題）
上記のような従来の半導体発光装置では、誘電体膜３が
化合物半導体層１の上に直接形成されており、その上に
ｎ電極４が形成されているが、化合物半導体層１と誘電
体膜３間には強固な密着性が存在せず、チップ分離後の
組み立て時等に誘電体膜３が化合物半導体層１から剥離
してしまうという問題点があった。(Problems to be Solved by the Invention) In the conventional semiconductor light emitting device as described above, the dielectric film 3 is formed directly on the compound semiconductor layer 1, and the n-electrode 4 is formed on it. There was a problem in that there was no strong adhesion between the compound semiconductor layer 1 and the dielectric film 3, and the dielectric film 3 would peel off from the compound semiconductor layer 1 during assembly after chip separation. .
この発明は、かかる課題を解決するためになされたもの
で、化合物半導体層と誘電体膜との密着性を向上させ、
誘電体膜の剥離が生じない半導体装置を得ることを目的
とする。This invention was made to solve this problem, and improves the adhesion between the compound semiconductor layer and the dielectric film,
An object of the present invention is to obtain a semiconductor device in which peeling of a dielectric film does not occur.
この発明に係−る半導体装置は、半導体層と誘電体膜と
の双方に対して高い密着性を有する密着媒介膜を、半導
体層と誘電体膜との間に備えたものである。A semiconductor device according to the present invention includes an adhesion mediating film having high adhesion to both the semiconductor layer and the dielectric film, between the semiconductor layer and the dielectric film.
この発明においては、誘電体膜が密着媒介膜により半導
体層に密着される。In this invention, a dielectric film is closely attached to a semiconductor layer by an adhesion mediating film.
〔実施例）
第１図はこの発明の一実施例を示す半導体発光装置の断
面図である。[Embodiment] FIG. 1 is a sectional view of a semiconductor light emitting device showing an embodiment of the present invention.
図において、第２図と同一符号は同一または相当部分を
示し、６はＣｒおよびＴｉのうちの少なくとも一方を含
む合金からなる密着媒介膜である。In the figure, the same reference numerals as in FIG. 2 indicate the same or corresponding parts, and 6 is an adhesion mediating film made of an alloy containing at least one of Cr and Ti.
すなわちこの発明では、化合物半導体層１および誘電体
膜３の双方に対して高い密着性を持つ密着媒体膜６を介
して化合物半導体層１上に誘電体膜３を形成しているの
で、結果的に化合物半導体層１と誘電体膜３との密着性
が向上されている。That is, in this invention, since the dielectric film 3 is formed on the compound semiconductor layer 1 via the adhesive medium film 6 which has high adhesion to both the compound semiconductor layer 1 and the dielectric film 3, the resulting The adhesion between the compound semiconductor layer 1 and the dielectric film 3 is improved.
なお、上記実施例では、ＩｎＰ系の半導体発光装置につ
いて説明したが、誘電体膜を有する他の素子についても
同様であることはいうまでもない。In the above embodiments, an InP-based semiconductor light emitting device has been described, but it goes without saying that the same applies to other elements having dielectric films.
以上説明したようにこの発明は、半導体層と８電体膜と
の双方に対して高い密着性を有する密着媒介膜を、半導
体層と誘電体膜との間に備えたので、誘′電体膜の剥離
を防止することができ信頼性および製造歩留りが向上す
るという効果がある。As explained above, in the present invention, an adhesion mediating film having high adhesion to both the semiconductor layer and the dielectric film is provided between the semiconductor layer and the dielectric film. This has the effect of preventing film peeling and improving reliability and manufacturing yield.
第１図はこの発明の一実施例を示す半導体発光装置の断
面図、第２図は従来の半導体発光装置を示す断面図であ
る。
図において、１は化合物半導体層、２は発光領域、３は
誘電体膜、４はｎ電極、５はｐ電極、６は密着媒介膜で
ある。
なお、各図中の同一符号は同一または相当部分を示す。FIG. 1 is a sectional view of a semiconductor light emitting device showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor light emitting device. In the figure, 1 is a compound semiconductor layer, 2 is a light emitting region, 3 is a dielectric film, 4 is an n-electrode, 5 is a p-electrode, and 6 is an adhesion mediating film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
する密着媒介膜を、前記半導体層と前記誘電体膜との間
に備えたことを特徴とする半導体装置。1. A semiconductor device comprising: an adhesion mediating film having high adhesion to both the semiconductor layer and the dielectric film, between the semiconductor layer and the dielectric film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023260A JPH01198087A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023260A JPH01198087A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01198087A true JPH01198087A (en) | 1989-08-09 |
Family
ID=12105632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63023260A Pending JPH01198087A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01198087A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011122433A1 (en) * | 2010-03-31 | 2011-10-06 | 日亜化学工業株式会社 | Semiconductor light emitting element |
-
1988
- 1988-02-02 JP JP63023260A patent/JPH01198087A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011122433A1 (en) * | 2010-03-31 | 2011-10-06 | 日亜化学工業株式会社 | Semiconductor light emitting element |
| JPWO2011122433A1 (en) * | 2010-03-31 | 2013-07-08 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| JP5772818B2 (en) * | 2010-03-31 | 2015-09-02 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| US9761760B2 (en) | 2010-03-31 | 2017-09-12 | Nichia Corporation | Semiconductor light emitting element |
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