JPH09176856A - Sheet type vacuum treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sheet type vacuum treating apparatus with which various composite processes are made possible without degrading the quality of substrates to be vacuum treated. SOLUTION: A charging chamber 57, first transporting chamber, second transporting chamber and taking-out chamber are respectively provided with isolation chambers 73a having transporting means consisting of a pair of substrate supporting members 96a, 96b which are driven in a perpendicular direction via openings 101a, 101b and are capable of supporting the substrates 22, a pair of transporting members 97a, 97b which are driven in a horizontal direction and are capable of transferring and receiving the substrates 22 to and from these substrate transporting members 96a, 96b and junction members 98 which junction the transfer and receipt of the substrates 22 between a pair of the transporting members 97a and 97b, and a pair of lock valves 99a, 99b for opening and closing the openings 101a, 101b. As a result, the spacings between respective satellites and the inside and outside of the sheet type vacuum treating apparatus are vacuum insulated at all times. The various composite processes are thus made possible without degrading the quality of the substrates to be subjected to the vacuum treatment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single wafer type vacuum processing apparatus.

[0002]

2. Description of the Related Art Conventional vacuum processing apparatuses include an in-line system for transferring a substrate to each vacuum processing chamber using a tray, or a sheet having a vacuum processing chamber on the circumference of a common transfer chamber. There is a leaf ceremony. As is well known, in the in-line system, the charging chamber 2, the sputtering chambers 3 and 4 and the extraction chamber 5 are provided with gate valves 7b, 7c and 7 as shown by 1 in FIG.
and the vacuum processing chambers 2,
3, 4 and 5 are vacuum pumps 6a, 6b, 6c and 6 respectively.
Independent exhaust is possible by d. Then, when the unprocessed substrate 8 is loaded into the loading chamber 2 via the gate valve 7a, the substrate 8 is loaded on the carrier 9 in the loading chamber 2.
Then, by opening and closing the gate valves 7b and 7c, the carrier 9 is sequentially transported to the sputtering chambers 3 and 4 and each predetermined sputtering process is performed. After that, the substrate 8 on which the film has been formed is transferred to the take-out chamber 5 via the gate valve 7d and taken out to the outside via the gate valve 7e. The in-line type vacuum processing apparatus 1 shown in the figure has two sputtering chambers 3 between a charging chamber 2 and an extraction chamber 5.
4 is provided, but actually, according to the processing mode of the substrate 8,
In addition to the sputtering chambers 3 and 4, for example, a heating chamber and a cooling chamber for heating and cooling the substrate 8, a deposition chamber by a CVD method,
Various vacuum processing chambers such as an etching chamber may be provided.

FIG. 13 is a plan view showing the arrangement of a conventional single-wafer type vacuum processing apparatus 14, in which a charging chamber 16, a heating chamber 17, and a sputtering chamber 18 are arranged at 45 ° intervals on the outer peripheral edge of a substantially cylindrical main body 15.
a, 18b, 18c, 18d, a cooling chamber 19 and an extraction chamber 20 are provided. The single-wafer type vacuum processing apparatus 14 prepares a substrate (for example, a hard disk) to be formed into a preparation chamber 16 one by one, and a heating chamber 17 and a sputtering chamber 18a.
˜18d and the cooling chamber 19 are vacuum-treated in each vacuum processing chamber, and the film-formed substrate is taken out from the taking-out chamber 20 to the outside. The vacuum processing chamber and the main body 15 can be independently evacuated.

The details of the single-wafer type vacuum processing apparatus 14 will be described. The substrate 22 is carried inside the main body 15 by a substrate carrying mechanism 23 shown in FIG. The bottom of the disk-shaped rotary table 24 has a shaft portion 24 penetrating a support plate 25 fixed to a part of the main body 15.
a is inserted through the vacuum seal, and its lower end is fixed to an elevating / lowering drive unit 26 that elevates and lowers the rotary table 24 by a predetermined distance. A gear 30 is integrally and concentrically fixed to the shaft portion 24a of the rotary table 24.
The timing belt 29 is wound between 0 and the drive shaft 31 of the rotary drive unit 27 arranged on the support plate 25. The rotary drive unit 27 is driven by a control device (not shown), and the rotary table 24 is rotationally driven (indexing-indexing) at predetermined timings at predetermined angles. As a result, the substrate transfer mechanism 23
The single-wafer processing apparatus 14 is driven based on the vacuum processing process. The rotary table 24 has a transfer space S (FIG.
4), the rotation drive unit 27 and the elevating drive unit 26
The shaft 24a of the rotary table 24 is supported by the bottom wall 15a of the main body 15 via a seal member, and is vertically moved by expanding and contracting the metal bellows 28.

Further, as shown in FIG. 14, the rotary table 2
Eight substrate holders 32 are arranged on the outer peripheral edge of the substrate 4 at intervals of 45 degrees via the bottom plate 32a. A seal member 33 is attached to the bottom plate 32a as shown in FIG. 15, and a plurality of springs 34 elastically support between the bottom plate 32a and the rotary table 24. Although not shown, pedestals are fixed to the lower ends of the springs 34, respectively, and are fixed to the rotary table 24 via the pedestals. The substrate 22 has a lower end portion which is a substrate holder 32.
It is held by engaging with an arcuate groove 32b or a claw formed at the upper end of the.

[0006] By the substrate transfer mechanism 23 described above, FIG.
With reference to FIG. 3, the substrates 22 that are individually loaded into the single-wafer processing apparatus 14 from the outside via the loading chamber 16 are held by the substrate holders 32. The rotary table 24 is lowered by a predetermined distance by driving the elevating / lowering drive unit 26 of the substrate transfer mechanism 23, and then is rotated by a predetermined angle (45 degrees) in the clockwise direction (arrow in the figure) by the drive of the rotary drive unit 27, and then is moved up and down. By driving the drive unit 26, it again rises by a predetermined distance. By this series of driving, the substrate holder 32 located in the preparation chamber 16 is moved to the heating chamber 17 which is the vacuum processing chamber in the next process.
Therefore, the substrate 22 held by this is supplied from the preparation chamber 16 to the heating chamber 17 together. At this time, the next substrate holder 32 is supplied to the preparation chamber 16 and a new substrate 22 is held therein. In the figure, the alternate long and short dash line P indicates the trajectory drawn by the substrate holder 32.

The substrate 22 which has been heated in the heating chamber 17 for a predetermined time is then supplied to the sputtering chambers 18a to 18d by driving the substrate transfer mechanism 23 at a predetermined timing. This is because the rotary table 24 is rotated by a predetermined angle by the drive of the rotary drive unit 27, and then is raised by the drive of the elevating / lowering drive unit 26, and the substrate 22 and the substrate holder 32 on the rotary table 24 are placed in the sputtering chambers 18a-18d. It is supplied to the inside of the vacuum chamber, that is, the vacuum processing chamber, and a predetermined sputtering process is performed. When the sputtering process is completed, the substrates 22 are sequentially cooled by the substrate transport mechanism 23 in the cooling chamber 19 and then discharged from the ejection chamber 20 to the outside.

However, in the conventional vacuum processing apparatus described above, for example, film formation using ultra clean technology (hereinafter, simply abbreviated as UCT) or plasma CVD in which a special gas is flown is performed in the same apparatus. The thing is
There is a problem for the following reasons. That is, since the carrier 9 is used in the single-wafer processing apparatus 1 according to the in-line method of FIG. 12, a film formed by plasma CVD or a film formed by UCT is laminated on the same carrier 9, and the gas released from the carrier 9 is generated. The film may peel off. Further, in the single-wafer type vacuum processing apparatus 14 of FIG. 13, before and after vacuum processing in the vacuum processing chambers of the heating chamber 17, the sputtering chambers 18a to 18d, and the cooling chamber 19, all of these vacuum processing chambers have a common atmosphere, and the UCT And plasma CVD cannot be compatible with each other.

That is, film formation by UCT means H ₂ O
Film formation (sputtering in this case) in the state where the residual gas partial pressure of (water) molecules is 10 ^-9 Torr or less, but when UCT and plasma CVD are made compatible, the UCT film formation chamber and the front It is necessary to separate the vacuum processing chambers on the processing side and the post-processing side from each other. The main reason for this is that roughing is performed in the charging chamber on the pretreatment side, but prevention of gas wraparound and heat treatment of the substrate as pretreatment are mentioned. Must be prevented and on the post-treatment side this is the plasma C
When forming a protective film by VD, a CH (hydrocarbon) -based gas or another gas is used, but it is necessary to prevent the gas from flowing around. In particular, when the plasma CVD film adheres to the carrier 9 or the substrate holder 32 that conveys the substrate and reaches the UCT film forming chamber, the gas released from this may be considered. That is, it is necessary to prevent the destruction of the atmosphere of the UCT film forming chamber due to the vacuum processing chamber on the pretreatment side or the vacuum processing chamber on the posttreatment side.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a single-wafer type vacuum processing apparatus which enables various composite processes.

[0011]

SUMMARY OF THE INVENTION The above object is to provide a plurality of substrate holders arranged on the outer peripheral edge of the turntable at equal angular intervals, and a plurality of substrate holders arranged immediately above the respective substrate holders. A plurality of single-wafer type vacuum processing machines each comprising a vacuum processing chamber, a first drive mechanism for rotationally driving the rotary table, and a second drive mechanism for vertically moving the rotary table are provided. In the single-wafer-type vacuum processing machine according to the first aspect, at least one vacuum processing chamber of the plurality of vacuum processing chambers is used as a charging chamber, and at least one other vacuum processing chamber is used as a transfer chamber, and the second single-wafer processing is performed. Type vacuum processing machine, at least one vacuum processing chamber of the plurality of vacuum processing chambers serves as a first transfer chamber, and at least one other vacuum processing chamber serves as a second transfer chamber. The leaf type vacuum processing machine has the above-mentioned plurality of vacuum processings. At least one vacuum processing chamber to the first transfer chamber, and the other of the at least one vacuum processing chamber and the second transfer chamber, and the same as the fourth of the fifth, ...,
The n-th single-wafer processing machine constitutes the n-th single-wafer vacuum processing machine, and the second transfer chamber of the n-th single-wafer processing machine is an extraction chamber, and the rotary table is driven by the first and second drive mechanisms. By a predetermined angle, and the rotary table is raised by a predetermined distance to vacuum-insulate the respective vacuum processing chambers to perform a predetermined vacuum processing. Each of the first single-wafer processing machines The substrate, which has been subjected to the first vacuum processing in the vacuum processing chamber, is transferred through the transfer chamber and the first transfer chamber of the second single-wafer processing machine to the second single-wafer processing machine. One substrate transfer chamber and each of the vacuum processing chambers are sequentially supported by the substrate holder by the driving of the first and second drive mechanisms, and vacuum insulation is performed to perform a second vacuum processing, and the second vacuum processing is performed. The performed substrate is transferred to the second transfer chamber and the third single-wafer processing vacuum machine. Wherein through the first transfer chamber 3
In the single-wafer-type vacuum processing machine, the first transfer chamber and the respective vacuum processing chambers are sequentially supported by the substrate holder by being driven by the first and second driving mechanisms, and are vacuum-insulated to perform a third vacuum processing. Through the second transfer chamber and the first transfer chamber of the fourth single-wafer type vacuum processing machine, and similarly in the following,
After the fifth, nth vacuum processing is performed, the first to nth vacuum-processed substrates are taken out of the unloading chamber, and the first vacuum processing is performed. A common first isolation chamber is provided between the transfer chamber of the single-wafer vacuum processing machine and the first transfer chamber of the second single-wafer vacuum processing machine, and the first isolation chamber is provided inside the first isolation chamber. First transfer means for transferring a substrate from the transfer chamber of the single-wafer type vacuum processing machine to the first transfer chamber of the second single-wafer type vacuum processing machine;
A pair of first lock valves for mutually vacuum-insulating the inside of the single wafer processing vacuum machine and the inside of the second single wafer processing machine, and the first lock valve is a wall portion of the first isolation chamber. A first valve plate for opening and closing a pair of first openings formed in the first opening, the first isolation chamber, the transfer chamber of the first single-wafer processing machine, and the first isolation chamber. The first transfer chambers of the second single-wafer vacuum processing machine can be alternately vacuum-insulated, and the second transfer chambers and the third single-wafer vacuum processing of the second single-wafer vacuum processing machine A common second isolation chamber is provided between the first transport chamber of the machine and the second transport chamber of the second single-wafer type vacuum processing machine from the second transport chamber to the third wafer. Transfer means for transferring a substrate to the first transfer chamber of the vacuum processing machine, inside the second single-wafer vacuum processing machine and the third single wafer A pair of second lock valves for vacuum-insulating the inside of the vacuum processing machine from each other are provided, and the second lock valves are for opening and closing a pair of second openings formed in the wall of the second isolation chamber. A second transfer chamber of the second isolation chamber and the second single-wafer vacuum processing machine; and a second isolation chamber and the first of the third single-wafer vacuum processing machine. The transfer chambers can be alternately vacuum-insulated, and a common first chamber can be provided between the second transfer chamber of the third single-wafer processing machine and the first transfer chamber of the fourth single-wafer processing machine. 3 isolation chambers are provided, and substrates are transferred into the third isolation chamber from the second transfer chamber of the third single-wafer processing machine to the first transfer chamber of the fourth single-wafer vacuum processing machine. The third transfer means, the third single-wafer processing vacuum machine, and the fourth single-wafer processing vacuum machine are mutually vacuum-insulated. A pair of third lock valves, the third lock valve having a third valve plate for opening and closing a pair of third openings formed in the wall of the third isolation chamber, and the third isolation valve. A chamber and the second transfer chamber of the third single-wafer processing machine, and the third isolation chamber and the first transfer chamber of the fourth single-wafer processing machine can be alternately vacuum insulated. Hereinafter, similarly, the fourth, fifth, ...
The single-wafer type vacuum processing apparatus is characterized in that the (n-1) th isolation chamber is configured so that the inside of each of the single-wafer type vacuum processing machines is always vacuum-insulated.

Further, the above object is to provide a plurality of substrate holders arranged at equal angular intervals on the outer peripheral edge of the rotary table, and a plurality of vacuum processing chambers provided immediately above the respective substrate holders.
A plurality of single-wafer type vacuum processing machines each comprising a first drive mechanism for rotationally driving the rotary table and a second drive mechanism for vertically driving the rotary table are provided, and in the order of vacuum processing steps,
In the first single-wafer processing machine, at least one vacuum processing chamber of the plurality of vacuum processing chambers serves as a loading chamber, and at least another vacuum processing chamber serves as a transfer chamber, and
In the single-wafer processing machine, the at least one vacuum processing chamber of the plurality of vacuum processing chambers serves as a first transfer chamber, and the other at least one vacuum processing chamber serves as a second transfer chamber. In the single-wafer processing machine of No. 3, at least one vacuum processing chamber among the plurality of vacuum processing chambers is a first transfer chamber, and at least another vacuum processing chamber is a second transfer chamber, and so on. The fourth, fifth, ..., The n-th single-wafer processing vacuum machine is constituted, and the second transfer chamber of the n-th single-wafer processing machine is an extraction chamber, The first and second drive mechanisms rotate the rotary table by a predetermined angle and raise the rotary table by a predetermined distance to vacuum-insulate each vacuum processing chamber to perform a predetermined vacuum processing. No. 1 in each vacuum processing chamber of the single-wafer processing machine The substrate that has undergone vacuum processing is transferred through the transfer chamber and the first transfer chamber of the second single-wafer vacuum processing machine to the first transfer chamber of the second single-wafer vacuum processing machine, and each of the vacuums. The substrate is sequentially supported by the substrate holder in the processing chamber by the driving of the first and second driving mechanisms, and vacuum insulation is performed to perform the second vacuum processing, and the substrate subjected to the second vacuum processing is transferred to the first substrate. The first transfer chamber of the third single-wafer vacuum processing machine and the first transfer chamber of the third single-wafer vacuum processing machine via the second transfer chamber and the first transfer chamber of the third single-wafer processing vacuum machine. , Sequentially supported by the substrate holder and vacuum-insulated by the driving of the second drive mechanism to perform the third vacuum processing, and the second transfer chamber and the fourth single-wafer processing vacuum machine 4th, 5th, ...
.. After performing the n-th vacuum processing, the first to n-th vacuum-processed substrates are taken out from the taking-out chamber, and the charging chamber and / or the taking-out chamber And a substrate supply chamber that can communicate with the outside of the single-wafer type vacuum processing machine, and a common isolation chamber is provided between the loading chamber and / or the unloading chamber and the substrate supply chamber. And a pair of lock valves for vacuum-insulating the substrate feeding chamber and / or the take-out chamber and the substrate supply chamber from each other, the lock valve being formed on a wall portion of the isolation chamber. A valve plate for opening and closing a pair of the opened openings, and the isolation chamber and the charging chamber and / or the extraction chamber, and the isolation chamber and the substrate supply chamber can be alternately vacuum-insulated and always Phase vacuum insulation between the inside and outside of the single wafer processing vacuum processing machine Single-wafer vacuum processing apparatus is characterized in that as is accomplished by.

[0013]

According to the invention of claim 1, in the order of the vacuum processing steps, the unprocessed substrates, which are loaded one by one in the loading chamber of the first single wafer processing machine, are held by the substrate holder. The rotary table is rotated by a predetermined angle and moved up and down by a predetermined distance by driving the first drive mechanism and the second drive mechanism to vacuum-insulate each vacuum processing chamber, and the first vacuum processing is performed in each vacuum processing chamber. . When the first vacuum processing is completed, the first single-wafer processing machine is driven one by one through the transfer chamber and the first transfer chamber of the second single-wafer processing machine by driving the rotary table. From the first single-wafer vacuum processing machine to the second single-wafer vacuum processing machine, the substrate is transferred between the first single-wafer vacuum processing machine transfer chamber and the second single-wafer vacuum processing machine first transfer chamber. Is conveyed through the pair of first openings of the first isolation chamber provided in the. The first opening is vacuum-insulated between the first single-wafer processing machine and the second single-wafer processing machine by a pair of first lock valves arranged in the first isolation chamber. It is possible. When the substrate is transferred from the transfer chamber of the first single-wafer processing machine into the first isolation chamber, the first opening on the transfer chamber side is opened, and the substrate is transferred into the first isolation chamber by the first transfer means. After that, the first opening is closed again.
When the substrate is transferred from the first isolation chamber to the first transfer chamber of the second single-wafer processing machine, the first opening on the side of the first transfer chamber is opened, and the substrate is also transferred by the first transfer means. Is the first
After being transferred into the transfer chamber, the first opening is closed again. As a result, the first single-wafer processing machine and the second single-wafer processing machine can always perform phase vacuum insulation and can transfer only the substrate. The atmosphere inside the leaf vacuum processing machine is not influenced by each other.

The substrate supplied to the second single-wafer type vacuum processing machine through the first isolation chamber vacuum-insulates each vacuum processing chamber by driving the above-mentioned rotary table, and the second vacuum processing chamber is subjected to the second insulation in each vacuum processing chamber. Vacuum processing is performed. When the second vacuum processing is completed, the rotary table is driven to drive the second transfer chamber of the second single-wafer processing machine and the first transfer chamber of the third single-wafer processing machine.
The substrates are transferred one by one from the second single-wafer processing machine to the second single-wafer processing machine through the transfer chamber. It is transported through a pair of second openings of a second isolation chamber provided between the second transport chamber and the first transport chamber of the third single-wafer processing machine.
This second isolation chamber performs the same operation as the above-mentioned first isolation chamber, and can always provide phase vacuum insulation between the inside of the second single-wafer processing machine and the inside of the third single-wafer processing machine. Moreover, only the substrate can be transported. Hereinafter, in the same manner, the substrates are subjected to the third, fourth, ..., Nth vacuum processing in the nth single-wafer type vacuum processing machine. , The (n-1) th isolation chambers are provided between the single-wafer-type vacuum processing machines for phase vacuum insulation. Then, the substrates subjected to the n-th vacuum processing are taken out one by one from the taking-out chamber of the n-th single wafer processing machine.

According to the third aspect of the invention, the substrate is loaded from the substrate supply chamber outside the apparatus into the loading chamber of the first single wafer processing machine through the isolation chamber. It is conveyed to the preparation chamber through a pair of openings formed in the isolation chamber. This opening can vacuum-insulate the substrate supply chamber and the loading chamber from each other by a pair of lock valves arranged inside the isolation chamber. When the substrate is transferred from the substrate supply chamber into the isolation chamber, the opening on the substrate supply chamber side is opened, and after the substrate is transferred into the isolation chamber by the transfer means, the opening is closed again. When the substrate is transferred from the isolation chamber to the charging chamber, the opening on the charging chamber side is opened, and after the substrate is transferred to the charging chamber by the transfer means, the opening is closed again. The substrate is held by a substrate holder located in the loading chamber, and each rotary chamber is driven by the first drive mechanism and the second drive mechanism to rotate the rotary table at a predetermined angle and move up and down for a predetermined distance. Vacuum insulated, first
Vacuum processing is performed. When the first vacuum processing is completed, the first single-wafer processing machine is driven one by one through the transfer chamber and the first transfer chamber of the second single-wafer processing machine by driving the rotary table. To a second single wafer processing machine. The substrate supplied to the second single-wafer type vacuum processing machine via the first transfer chamber vacuum-insulates each vacuum processing chamber by driving the rotary table, and the second vacuum processing is performed in each vacuum processing chamber. Done. When the second vacuum processing is completed, the substrate is transferred to the third single-wafer processing machine through the second transfer chamber and the first transfer chamber of the third single-wafer processing machine by driving the rotary table. , And the third, fourth, ..., Nth vacuum processes are similarly performed. These first to n-th vacuum-processed substrates are taken out from the take-out chamber of the n-th single-wafer type vacuum processing machine, which is the reverse of the above-mentioned loading of substrates into the loading chamber. It is transferred to the external substrate supply chamber by the procedure. As described above, the inside and outside of each single-wafer type vacuum processing machine can always be insulated from each other by phase vacuum, so that the film formation of the substrate in the apparatus can be performed efficiently and stably.

[0016]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a layout plan view of a single-wafer type vacuum processing apparatus according to an embodiment of the present invention, which is generally designated by 50, and FIG. 2 shows an external view thereof. The single-wafer type vacuum processing apparatus 50 according to the present embodiment is an apparatus for forming a film on a hard disk substrate (made of aluminum alloy), and is a first single-wafer type vacuum processing machine (hereinafter, simply referred to as a first satellite).
51, a second single-wafer processing machine (hereinafter simply referred to as a second satellite) 52, and a third single-wafer processing machine (hereinafter simply referred to as a third satellite) 53.
The main body 54 of the first satellite 51 includes a charging chamber 57, auxiliary chambers 58a and 58b, heating chambers 59a and 59b, and a first transfer chamber 6.
0, the regeneration chamber 61 and the spare chamber 58c are arranged at intervals of 45 degrees. Further, in the main body 55 of the second satellite 52, the first transfer chamber 60, the heating chamber 62, the first sputtering chambers 63a and 63b, the second sputtering chambers 63c and 63d, the second
A transfer chamber 65 and a regeneration chamber 66 are similarly arranged at intervals of 45 degrees, and further, in the main body 56 of the third satellite 53, a second transfer chamber 65, reaction chambers 68a, 68b, 68c, a take-out chamber, and a preliminary chamber. Similarly, the 70 and the regeneration chamber 71 are arranged at intervals of 45 degrees. Each of these vacuum processing chambers can be independently evacuated.

That is, in the single-wafer type vacuum processing apparatus 50 of the present embodiment, the first satellite 51 prepares the substrate and the heat treatment as the pretreatment, and the second satellite 52 mainly performs the magnetic layer film forming treatment. The protective film forming process is mainly performed on the third satellite 53, but especially in the first sputtering chambers 63a and 63b of the second satellite 52, Cr is used.
A (chromium) layer is formed, a Co (cobalt) alloy is formed in the second sputtering chambers 64a and 64b, and the first and second sputtering chambers 63a, 63b, 64a and 64b are UCT.
(Ultra Clean Technology) It is a film forming chamber.
In the reaction chambers 68a to 68c of the third satellite 53, a C (carbon) film is formed by plasma CVD (P-CVD).

Next, the structure of the main bodies 54, 55 and 56 of the satellites 51, 52 and 53 will be described.
Since the reference numerals 4, 55, and 56 have the same configurations, the main body 54 of the first satellite 51 will be representatively described.

Inside the main body 54 of the first satellite 51,
Similar to the conventional single-wafer processing apparatus 14 shown in FIG. 13, the substrate transfer mechanism 23 shown in FIG. 14 is provided.
That is, at the center bottom of the turntable 24, the main body 54
A shaft portion 24a penetrating a support plate 25 fixed to a part of the upper end is inserted into a vacuum seal, and the lower end portion thereof is a constituent element of the present invention for raising and lowering the rotary table 24 by a predetermined distance. It is fixed to an up-and-down drive unit 26 as a drive mechanism. A gear 30 is attached to the shaft portion 24a of the rotary table 24.
Are fixed integrally and concentrically.
And the drive shaft 31 of the rotary drive unit 27 as the first drive mechanism, which is also a component of the present invention, disposed on the support plate 25.
A timing belt 29 is wound between and. By the drive of the rotary drive unit 27, the rotary table 24 is rotationally driven by a predetermined angle at a predetermined timing.

Further, as shown in FIG. 14, the rotary table 2
8 substrate holders 32 are arranged at 45 degree intervals on the outer peripheral edge of
14, a seal member 33 is attached to the bottom plate 32a of the substrate holder 32, and a plurality of springs 34 are provided between the bottom plate 32a and the rotary table 24, as shown in FIG. Elastically supported. Although not shown, pedestals are fixed to the lower ends of the springs 34, respectively, and are fixed to the rotary table 24 via the pedestals. The substrate 22 is held by engaging its lower end with an arcuate groove 22b formed in the upper end of the substrate holder 32.

Although the substrate transfer mechanism 23 as described above is also provided in the main bodies 55 and 56 of the second and third satellites 52 and 53, the rotary table 24 is provided in the main body 5.
Transport space S kept at a predetermined degree of vacuum in 4, 55, 56
(Refer to FIG. 10) When each of the substrate holders 32 is driven to rotate by the rotation driving unit 27 and is moved up by a predetermined distance by driving of the elevating and lowering driving unit 26, the respective substrate holders 32 are moved.
4, 55 and 56 are housed in respective vacuum processing chambers arranged at equal angular intervals. At this time, the substrate holder 3
Due to the seal member 33 attached to the second bottom plate 32a, the respective vacuum processing chambers and the transfer space S are in a state of mutual vacuum insulation. In this state, a predetermined vacuum processing is performed in each vacuum processing chamber.

As shown in FIG. 2, the charging chamber 57 of the first satellite 51 and the take-out chamber 69 of the third satellite 53 are arranged in line, and below the charging chamber 57 and the take-out chamber 69. A linear conveyor 80 is laid on a carrier 81. Cassettes 82 are placed on the linear conveyor 80 at predetermined intervals, and each cassette 82 can accommodate twelve substrates 22. When the cassette 82 transferred from the upstream side of the linear conveyor 80 in the direction of the arrow a reaches the vicinity of the preparation chamber 57, the substrate preparation device 74 prepares the substrates 22 one by one into the preparation chamber 57. It has become. The loading chamber 57 is the substrate supply chamber 7 as described later.
2, the isolation chamber 73a and the loading chamber main body 76, of which the substrate 22 is fed to the substrate feeding chamber 72 by the substrate loading device 74. Therefore, the details of the substrate charging device 74 will be described below.

FIG. 3 shows an enlarged view of the main part of the substrate loading device 74. Below the substrate supply chamber 72, a holding member 85 having the same structure as the substrate holder 32 shown in FIG. It is arranged. That is, the bottom plate 85 of the holding member 85
A seal member 86 is attached to a and elastically supported by a plurality of springs 87 between the bottom plate 85a and the pedestal 88. Although not shown, pedestals are fixed to the lower ends of the springs 87, and the pedestals 88 are fixed via the pedestals. And the holding member 85
An arcuate groove 85b is formed at the upper end of the substrate 22 by engaging the lower end of the substrate 22 with the groove 85b.
Is designed to hold. Further, a drive device for raising and lowering the holding member 85 by a predetermined distance is attached to the lower end portion of the gantry 88, and the holding member 85 is not shown.
3 is raised from the lowered position shown in FIG. 3 by a predetermined distance, the upper part of the holding member including the substrate 22 is accommodated from the bottom plate 85a through the opening 72a of the upper substrate supply chamber 72,
Further, the inside of the substrate supply chamber 72 and the outside air can be separated from each other by the seal member 86 attached to the bottom plate 85a.

A linear conveyor 8 is provided on the side of the holding member 85.
The holding member 8 holds the substrates 22 one by one from the cassette 82 on the 0.
There is provided a transfer member 90 for transferring to 5, which comprises a shank 91 and a wing 92 as shown in FIGS. The shaft portion 91 can be moved up and down by a predetermined distance in the axial direction, and can be rotated about the shaft by a predetermined angle. On the other hand, a pair of engaging portions 93, 93 are provided in the central portion of the tip of the wing portion 92, and these engaging portions 93, 93 are, as shown in FIG. It is possible to engage with the central hole 22a of the substrate 22 indicated by the alternate long and short dash line by moving from this position in the vertical direction by a predetermined distance.

The substrate preparation device 74 is constructed as described above. Next, the details of the preparation chamber 57 will be described.

The preparation chamber 57 is the substrate supply chamber 7 as described above.
2, the isolation chamber 73a and the charging chamber main body 76, and FIG. 6 shows an enlarged sectional view of the isolation chamber 73a. The substrate 22 supplied to the substrate supply chamber 72 by the substrate preparation device 74 is conveyed to the preparation chamber main body 76 which is one of the vacuum processing chambers of the first satellite 51 through the isolation chamber 73a shown in FIG. The details of the isolation chamber 73a will be described below.

The relay member 98 is disposed at the center of the bottom of the isolation chamber 73a, which is the relay block 104 and the drive rod 10.
5 and the driving unit 106. The drive portion 106 of the relay member 98 is fixed to the center of the bottom surface of the bottom wall of the casing 95 via the seal member 103, and the drive rod 10 thereof is provided.
5 is inserted into the first through hole 102 of the casing 95. A relay block 104 having an engaging groove 104a for holding the substrate 22 is fixed to the end of the drive rod 105, and the relay block 104 is driven by a predetermined distance by driving the drive unit 106. It is designed to be driven up and down. The relay member 98 is configured as described above, but the isolation chamber 73a has a symmetrical configuration in the figure with the relay member 98 as the center.

Transport members 9 are provided on the left and right side walls of the isolation chamber 73a.
7a, 97b and lock valves 99a, 99b are provided. The transport members 97a and 97b are the transport block 1
11a and 111b, drive rods 112a and 112b, and drive units 113a and 113b. Transport member 97
The drive portions 113a and 113b of a and 97b are the casing 9
5 are fixed to the outside of both side walls via seal members 109a and 109b, and their drive rods 112a and 112b.
The second through holes 107a, 10a on both side walls of the casing 95.
It is inserted through 7b. Then, this drive rod 112
Transport blocks 111a and 111b formed with engagement grooves 114a and 114b for holding the substrate 22 on the top are fixed to the end portions of a and 112b, and the driving unit 113 is provided.
a, 113b drive the transport blocks 111a, 11a
1b is horizontally movable from the position of P (P ') shown by the one-dot chain line in FIG. 6 to the position of Q shown by the two-dot chain line in the center of the isolation chamber 73a. In addition, this conveying member 9
7a and 97b, as shown in FIG.
2a and 112b are bifurcated at their ends, and the transport blocks 111a and 111b are divided into two parts and fixed to their respective ends. As shown in the drawing, the interval between these two blocks is formed to be slightly larger than the width of the relay block 104 of the relay member 98.

Next, details of the lock valves 99a and 99b will be described. In FIG. 6, openings 101a and 101b and third through holes 108a and 108b are formed in the bottom wall portion and the side wall portion of the casing 95, respectively.
The valve seat forming members 100a, 1 are provided in the openings 101a, 101b.
00b is attached via seal rings 115a and 115b. Opposite to this, rectangular valve body 11
4a and 114b are fitted with seal members 116a and 116b made of an elastomer or the like in grooves formed in the outer peripheral edge portions thereof, and abut the valve seat forming members 100a and 100b to take a valve closed state as shown in the figure. You can Third through hole 1
The driving unit 117 is arranged so as to fix the 08a and 108b in an airtight manner.
a and 117b are fixed to the outer wall of the casing 95 via seal members 110a and 110b, and their drive rods 118a and 118b have third through holes 108a and 108b.
The valve bodies 114a and 114b described above are fixed to the ends by loose fitting. The drive units 117a and 117b are the valve bodies 114.
a and 114b can be moved by a predetermined distance in the x direction and the y direction in FIG.
The valve b can be opened by driving b upward by the stroke in the y direction to move it to the position R indicated by the alternate long and short dash line. For driving in the x and y directions, permanent magnets are fixed to the drive rods 118a and 118b in the drive units 117a and 117b, although not shown, and the electromagnets are concentrically opposed to the permanent magnets. Is provided, and the movement of the electromagnet and the adjustment of the electromagnetic force are performed. Thereby, the valve body 11
4a, 114b are moved to the valve open position and the valve closed position by driving in the x direction, and the valve bodies 114a, 114b are moved to the valve seat forming members 100a, 10a at the valve closing position by driving in the y direction.
The isolation chamber 73a is closed by pressing it against 0b.

The above-mentioned opening 101a communicates with the substrate supply chamber 72, and the other opening 101b communicates with the preparation chamber main body 76, but the positions corresponding to these openings 101a, 101b above the isolation chamber 73a. The substrate support member 9
6a and 96b are provided. These substrate support members 9
6a and 96b are composed of drive units 119a and 119b and support units 120a and 120b.
By driving 9b, the supporting portions 120a and 120b can be lowered from the position shown in FIG. 6 to the inside of the substrate supply chamber 72 and the loading chamber main body 76 through the openings 101a and 101b, respectively. In addition, this support portion 120
A pair of upper and lower arms 121a and 1a are provided at the ends of a and 120b.
21a, 121b, 121b are arranged. These arms 121a, 121b are movable in the axial direction and the vertical direction as shown in FIG. 8, and engage with the central hole 22a of the substrate 22 as shown in FIG. 8C. You can do it.

The isolation chamber 73a is configured as described above, and the substrate support members 96a and 96b, the transport members 97a and 97b, and the relay member 98 constitute the transport means of the present invention. Further, normally, the lock valves 99a and 99b are in a valve closed state as shown in FIG. 6, and the inside of the isolation chamber 73a is controlled by a turbo molecular pump 83 (see FIG. 2) through an exhaust port (not shown) to a predetermined vacuum degree. Is kept at.

First satellite 51 and second satellite 52
As shown in FIG. 10, the first transfer chamber 60 disposed between the transfer chamber main body V on the first satellite 51 side, the transfer chamber main body W on the second satellite 52 side, and the transfer chamber main body V,
The isolation chamber 73b is disposed between W and has the same structure as the isolation chamber 73a of the preparation chamber 57 described with reference to FIG. That is, as will be described later, the substrate 22 loaded in the loading chamber 57 is subjected to a predetermined heat treatment in the heating chambers 59a and 59b, and then the substrate 22 passes from the first satellite 51 to the first satellite 51 through the first transfer chamber 60. Although being supplied to the two satellites 52, the substrate 22 held by the substrate holder 32 on the satellite A side and accommodated in the transfer chamber main body V is the substrate support members 96a and 96b inside the isolation chamber 73b, and the transfer member 97a. , 9
2nd by the conveyance means which consists of 7b and the relay member 98.
It is held by the substrate holder 32 ′ housed in the transfer chamber body W on the satellite 52 side. In addition, a second transfer chamber 65 arranged between the second satellite 52 and the third satellite 53.
The isolation chamber 73c is also configured similarly.

Explaining the take-out chamber 69 further, referring to FIG. 2, the take-out chamber 69 is composed of the take-out chamber main body 77 and the isolation chamber 7.
3d and a substrate supply chamber 123, a substrate take-out device 75 having the same configuration as the substrate preparation device 74 described above is arranged immediately below the substrate supply chamber 123. The substrate take-out device 75 is composed of a transfer member 124, a holding member 125, and the like, and thereby the substrate 22 taken out from the substrate supply chamber 123 is accommodated in a cassette 82 that flows on a front linear conveyor 80. ing.

The single-wafer processing apparatus 50 of this embodiment is constructed as described above, and its operation will be described below.

Referring to FIG. 2, the substrate 22 to the preparation chamber 57
The preparation will be described. When the cassette 82 containing the unprocessed substrate 22 transferred by the linear conveyor 80 reaches the vicinity of the substrate loading device 74, the transfer member 90.
The wing portion 92 rotates to the position shown in the figure, and the shaft portion 91 descends in the axial direction by a predetermined distance. At this time, the engaging portions 93, 93 of the wing portion 92 face the central hole 22 a of the substrate 22.
Then, the engaging portions 93, 93 protrude axially by a predetermined distance and move in the vertical direction, whereby the engaging portion 9
3, 93 engage with the central hole 22 a of the substrate 22. Then, when the shaft portion 91 is moved up by a predetermined distance in the axial direction, the blade portion 92 is rotated by a predetermined angle, and is lowered again by the predetermined distance in the axial direction, the substrate 22 moves into the groove of the holding member 85 as shown in FIG. 85b. Then, the pedestal 88 is raised by a predetermined distance, so that the substrate 22 is directly above the substrate supply chamber 72.
Housed within.

Referring to FIG. 6, the transfer member 97a on the left side is first in the P position inside the isolation chamber 73a, and the substrate 22
When the substrate is housed in the substrate supply chamber 72, the lock valve 99
a moves to the R position to open the opening 101a.
That is, the isolation chamber 73a and the substrate supply chamber 72 communicate with each other. At this time, the substrate supply chamber 72 and the outside of the apparatus are vacuum-insulated by the seal member 86 mounted on the bottom plate 85a of the holding member 85, and the lock valve 99b on the right inside the isolation chamber 73a is at the valve closed position. Therefore, the isolation chamber 73b and the charging chamber body 76 are vacuum-insulated. In this state, the supporting portion 120 of the substrate supporting member 96a
The opening 100a in which a is extended downward and is in a valve open state
The arms 121a and 121a of the support portion 120a face the central hole 22a of the substrate 22 in the substrate supply chamber 72 through the through holes. This state is shown in FIG. 8A. Then, as shown in FIGS. 8B and 8C, the arms 121a and 121a project axially to penetrate the center hole 22a of the substrate 22 and move vertically to move the center hole 22a of the substrate 22.
Engages. After that, the supporting portion 120a again moves upward, rises to the position shown in FIG.
a from the P position to the position shown by the solid line, and the lock valve from the R position to the valve closed state shown by the solid line.
a separates from both the substrate supply chamber 72 and the loading chamber body 76. Even if the degree of vacuum in the isolation chamber 73a decreases as the lock valve 99a opens and closes, the inside of the isolation chamber 73 is always restored to a predetermined degree of vacuum by the vacuum evacuation action of the turbo molecular pump 83.

A substrate support member 120a supporting the substrate 22
Moves down toward the transfer block 111a of the lower transfer member 97a and places the substrate in the engagement groove 114a of the transfer block 111a. Then, the arm 121 of the support portion 120a
a and 121a are the reverse of the above procedure, and the center hole 22a of the substrate 22 is
The engagement state with respect to is released. Transport member 97 at this time
The state of a and the substrate 22 is shown in FIG. 7 though briefly. Next, the transport member 97a moves to the right in FIG. 6 at the lowered position of the relay member 98, and transports the transport block 111a to the position Q indicated by a two-dot chain line in the figure while holding the substrate 22. When the transport block 111a stops at the Q position, the relay member moves upward from the lowered position shown in FIG. 6, engages the lower end portion of the substrate 22 with the engagement groove 104a of the relay block 104, and further moves up. The relay block 104 replaces the transfer block 111a with the substrate 22.
Hold. When the engagement state between the substrate 22 and the transport block 111a is released, the transport block 111a moves to the drive unit 1
13a is moved to the left again, and P indicated by the alternate long and short dash line
Wait to hold the next substrate in position.

Referring to FIG. 7, the transfer member 97b on the right side starts to be driven in a state where the relay block 104 holding the substrate 22 maintains its raised position. That is, the drive unit 1
The transfer block 111b is moved to the relay member 1 by driving 13b.
It moves to the Q position where 06 is located (the position shown by the alternate long and short dash line in FIG. 7) and stops there. And the drive unit 106
The relay block 104 is lowered by the driving of (1), the substrate 22 is engaged with the engagement groove 114b of the transport block 111b, and further lowered, the transport block 111b holds the substrate 22 in place of the relay block 104. Next, the transport block 111b holds the substrate 22 and drives the drive unit 1
By driving 13b, it moves to the position shown by the solid line in FIG. 6 and stops. Therefore, the support portion 120b of the substrate support member 96b located immediately above the transfer block 111b moves downward by the drive of the drive portion 119b, and the arm 121 is moved.
b and 121b are opposed to the central hole 22a of the substrate 22, and the arm 121a of the other substrate supporting member 119a described above is provided.
The substrate 22 on the transport block 111b is held by the same action as 121a, and then the substrate 22 is raised by a predetermined distance. In this state, the transport member 97b retracts to the position P'and the lock valve 99b retracts to the R position. That is, the lock valve 99b is in the valve open position, and the isolation chamber 73a and the charging chamber body 76 are in communication with each other. At this time, the rotary table 9 of the first satellite 51 is in the raised position, and the substrate holders 32 arranged on the outer peripheral edge of the rotary table 9 are placed in the vacuum processing chambers of the first satellite 51 including the charging chamber body 76. It is housed. In this state, the holding portion 120b of the substrate supporting member 96b supporting the substrate 22 extends downward,
The substrate 22 is placed on the substrate holder 32 housed in the charging chamber body 76 via the opening 101b in the valve open state. Then, the engagement state between the arms 121b and 121b and the central hole 22a of the substrate 22 is released, and the arms are raised again to the position shown in FIG. 6, after which the lock valve 99b takes the valve closed state shown in the figure.

As described above, as shown in FIG. 9, the substrates 22 are held one by one by the substrate holding member 85.
2, the transfer means inside the isolation chamber 73a, that is, the substrate support member 96a to the transfer member 97a, the relay member 9
8, the carrier member 97b, and then the substrate supporting member 96b, and the substrate holder 32 fixed to the outer peripheral edge of the rotary table 9 in the main body 54 of the first satellite 51 located in the main body 76 of the charging chamber. It By this isolation chamber 73a, the substrate 22 can be charged into the substrate holder 32 of the first satellite 51 from the outside of the apparatus at all times with the atmosphere inside the first satellite 51, that is, the vacuum state and the outside air being vacuum-insulated.

Referring to FIG. 1, in the charging chamber 57,
More specifically, the substrate holder 32 holding the unprocessed substrate 22 in the loading chamber main body 76 is lowered by the predetermined distance of the turntable 9 and rotated by 45 degrees (in the direction of the arrow in the figure) and raised by the predetermined distance, so that the preliminary chamber 58a. Be transferred to. At this time, a new unprocessed substrate 22 is held by the substrate holder 32 in the charging chamber main body 76 through the above process.
Then, by repeating a series of operations of lowering the rotating table 9, rotating by 45 degrees, and raising, the unprocessed substrates 22 are sequentially held by the substrate holder 32 in the preparation chamber 57. When the substrate holder 32 holding the unprocessed substrate 22 is supplied to the heating chamber 59b, the substrate holder 32 holding the unprocessed substrate 22 also in the heating chamber 59a on the upstream side.
However, at this time, the substrate 22 is simultaneously subjected to a predetermined vacuum heat treatment (degassing treatment) in the heating chambers 59a and 59b. In addition, the preliminary chambers 58a, 5
The substrate 22 supplied to 8b is not subjected to any vacuum processing here, and is merely waiting.

When the predetermined vacuum heating processing in the heating chambers 59a and 59b is completed, the above-described series of driving of the rotary table 9 is restarted again, and the untreated substrates 22 are sequentially charged in the charging chamber 57 as described above. Be done. Further, the substrate holder 32 reaching the first transfer chamber 60 is housed in the transfer chamber body V on the first satellite 51 side as shown in FIG. The heat-treated substrate 22 accommodated therein is transferred to the substrate holder 32 ′ accommodated in the transfer chamber main body W on the second satellite 52 side via the isolation chamber 73b. The transfer means arranged in the isolation chamber 73b of the first transfer chamber 60 has the same action as the transfer means arranged in the isolation chamber 73a of the preparation chamber 57, and the transfer chamber main body V on the first satellite 51 side. Since the substrate 22 is transferred from to the transfer chamber body W on the second satellite 52 side, detailed description thereof will be omitted.

The substrate 22 supplied to the substrate holder 32 'of the second satellite 52 via the first transfer chamber is moved from the transfer chamber main body W to the heating chamber by a series of drive of the rotary table 9 like the first satellite 51. It is transferred to 62, where a predetermined vacuum heat treatment (up to 280 ° C.) is performed again. At this time, the substrate holder 32 ′ located in the transfer chamber body W of the second satellite 52 holds the next substrate 22 transferred in the isolation chamber 73b. In this way, the substrate 22 is sequentially transported to the second satellite 52. The substrate 22 that has been subjected to a predetermined heating and vacuum treatment in the heating chamber 62 is transferred to the first sputtering chambers 63a and 63b, respectively.
UCT film formation of (chromium) is performed all at once. After that, the substrate 22 on which the film has been formed is placed in the second sputtering chambers 64a and 64b.
Then, the UCT film of the Co alloy is simultaneously formed. A magnetic layer is formed on the substrate 22 by these first and second sputtering processes. The substrate 22 on which the magnetic layer is formed in the second satellite 52 is sequentially supplied to the substrate holder 32 ″ (not shown) of the third satellite 53 via the second transfer chamber 65. The isolation chamber 73c of the second transfer chamber 65 also performs the same operation as that of the isolation chamber 73a of the loading chamber 57 to transfer the substrate 22 from the second satellite 52 to the third satellite 53.

The third satellite 5 is passed through the second transfer chamber 65.
The substrate 22 supplied to the third substrate holder 32 ″ has the turntable 9 of the third satellite 53 lowered similarly to the turntable 9 of the first and second satellites 51 and 52 described above.
A series of driving of rotation and ascending by 45 degrees is performed, the first transport chamber 65 is transferred to the cooling chamber 67, and a predetermined cooling process is performed. When the cooling process of the substrate 22 is completed, a series of driving of the rotary table 9 is restarted again, and thereby, sequentially,
The substrate 22 transferred from the second satellite 52 to the substrate holder 32 ″ of the third satellite 53 via the second transfer chamber 65 is supplied to the cooling chamber. The cooled substrate 22 is supplied to each of the reaction chambers 68a to 68c. Transferred, where plasma C
A C (carbon) film is formed on the magnetic layer by the VD method. That is, a protective film is formed. Reaction chamber 68a-68
The substrate 22 on which the protective film is formed in c is taken out to the outside of the apparatus through the take-out chamber 69 by a series of drive of the rotary table 9. The taking-out action of the substrate 22 will be described below. .

With reference to FIG. 2, the film-formed substrate 22 transferred to the take-out chamber main body 77 by a series of driving of the rotary table 9 of the third satellite 53 is carried out by the transfer means similar to the above in the isolation chamber 73d. The substrate is conveyed to the substrate supply chamber 123, and at this time, the holding member 125 of the substrate unloading device 75 disposed immediately below the substrate supply chamber 123 is the substrate supply chamber 12.
It is housed in 3. That is, the holding member 85 of the substrate preparation device 74 described above is the substrate supply chamber 7 of the preparation chamber 57.
2, the substrate supply chamber 12
3 and the outside air are in phase vacuum insulation. In this state, the substrate 22 is moved by the action of the transfer means in the isolation chamber 73d.
The holding member 125 which holds the holding member 125 takes the lowered position shown in FIG. 2, and the transfer member 124 moves from the holding member 125 to the front cassette 82 on the linear conveyor 80 by the same operation as the transfer member 90 of the substrate loading device 74 described above. The substrate 22 is transferred. Hereinafter, by repeating this operation, the substrates 22 on which the protective films have been formed by the third satellites 53 are sequentially taken out one by one from the take-out chamber 69 to the outside of the apparatus, and are transferred to the cassette 82 on the linear conveyor 80. Be accommodated.

The first, second and third satellites 5 are
Playback chambers 61 and 6 disposed at 1, 52 and 53, respectively.
Denoted at 6 and 71 are vacuums for removing the adhering films laminated by the substrate holders 32, 32 ′ and 32 ″ of the satellites 51, 52 and 53 during the vacuum processing of the substrate 22, that is, cleaning the substrate holder by sputter cleaning or the like. It is a processing chamber and is configured to be able to perform the cleaning action of the substrate holder even while the single wafer processing apparatus 50 is in operation.If it is difficult to remove the deposits, vent the entire apparatus to the atmosphere. Without these reproduction chambers 61, 66,
The substrate holder can be replaced at 71 to improve the operating rate of the apparatus.

The single-wafer processing apparatus 50 according to the present embodiment performs the above-mentioned operations, but has the following effects.

That is, since the isolation chamber 73a (73d) shown in FIG. 6 is provided in each of the charging chamber 57 and the take-out chamber 69, the single-wafer type vacuum processing apparatus 50 and its outside can always be vacuum-insulated. Therefore, it is possible to efficiently and stably form a thin film on the substrate 22.

Further, the first transfer chamber 60 and the second transfer chamber 6
Since 5 also has similar isolation chambers 73b and 73c,
The atmosphere between the satellites can be completely separated. That is, for example, the second and third satellites 52, 5
Regarding the third aspect, in the present embodiment, the UCT film formation is performed on the second satellite 52, while the film formation by plasma CVD is performed on the third satellite 53, respectively.
The satellite 53 uses a CH (hydrocarbon) -based or other special gas. However, the isolation chamber 73c of the second transfer chamber 65
Therefore, it is possible to prevent these special gases from entering the second satellite 52, and thus the second satellite 5 can be prevented.
In 2, it is possible to always perform stable UCT film formation.

Further, since only the substrate 22 is transferred in the isolation chambers 73a to 73d, the first inline transfer chamber 60 and the second transfer chamber 65 in particular have the above-described conventional in-line type sputtering apparatus 1. That is, a film formed by plasma CVD or a film formed by UCT is laminated on the same carrier 9 (substrate holders 32, 32 ', 32 "), and the gas released from the carrier or film peeling occurs to form a film forming chamber. There is no fear of causing the problem of deteriorating the atmosphere.

In other words, according to the single-wafer processing apparatus 50 of this embodiment, the UCT film formation and the plasma CVD film formation, which cannot be conventionally performed, can be stably performed by one device. .

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.

For example, in the above embodiment, the vacuum processing chambers of the satellites 51, 52, 53 of the single-wafer processing apparatus 50 are arranged as shown in FIGS. 1 and 2, but not limited to this. It is also possible to change the arrangement of each vacuum processing chamber or change the vacuum processing chamber. For example, the preliminary chambers 58a and 58b of the first satellite 51 are used as heating chambers, and the heating chambers 59a and 59b are also used.
In the sputtering chamber for substrate surface modification, and the vacuum processing chamber of the second satellite in the same arrangement as in the above-mentioned embodiment.
Even if the reaction chambers 68a to 68c of the satellite 53 are arranged as a sputtering chamber for forming a C (carbon) film, the substrate (suitable for a glass substrate in this example) can of course be applied to the present invention. Is. Even in this case, of course, the same effect as that of the above-described embodiment can be obtained.

In the above embodiment, the isolation chambers 73a and 73d having the same structure are provided in both the charging chamber 57 and the take-out chamber 69, but only one of them may be provided.

In the above embodiment, the pair of lock valves 99a and 99b arranged inside the isolation chamber are driven by electromagnetic force. Instead of this, the lock valves 99a and 99b are constructed as shown in FIG. The lock valve 129 may be used. In this configuration, a seal member 133 is attached to an edge portion of an opening 134 whose end portion is formed in an oblique direction, and a valve plate 130 is abutted so as to face the seal member 133.
30 is driven by a drive unit 132 via a drive rod 131 so that the inside of the isolation chamber E and the vacuum processing chamber F below can be vacuum-insulated.

In the above embodiment, the pair of openings 101 is used.
Although a and 101b are formed on the bottom wall portion of the isolation chamber 73a (or 73d), they may be formed on the side wall portion so that the substrate is mainly transported in the isolation chamber in the horizontal direction.

In the above embodiments, three satellites (single-wafer type vacuum processing machine) have been described, but the present invention is not limited to this, and a plurality of satellites such as fourth, fifth, ... Are arranged. You may go.

[0058]

As described above, according to the single-wafer type vacuum processing apparatus of the present invention, the atmosphere of the vacuum processing chamber in which the film is formed on the substrate is set to the atmosphere of the vacuum processing chamber on the pretreatment side and the posttreatment side. Therefore, various complex processes such as film formation by ultra clean technology (UCT) and film formation by plasma CVD can be simultaneously performed in one device.

[Brief description of the drawings]

FIG. 1 is an arrangement plan view of a single-wafer type vacuum processing apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing the same appearance.

FIG. 3 is an enlarged view showing a main part of FIG.

FIG. 4 is a front view showing a main part of FIG. 3;

FIG. 5 is a side view of the same.

FIG. 6 is an enlarged sectional view of an isolation chamber of a single-wafer type vacuum processing apparatus according to an embodiment of the present invention.

FIG. 7 is a simplified perspective view of a main part for explaining the operation of FIG.

FIG. 8 is a partial schematic side view for explaining the action of a substrate supporting member which is a transporting means in the embodiment of the present invention, A is a diagram showing an engaging position with a substrate, and B is a process of the engaging action. The figure, C is a figure which shows an engagement state.

FIG. 9 is a schematic perspective view illustrating the operation of FIG.

FIG. 10 is an enlarged cross-sectional view showing the arrangement configuration of another isolation chamber.

FIG. 11 is an enlarged cross-sectional view showing a modification of the lock valve according to the embodiment of the present invention.

FIG. 12 is a partially cutaway side view showing a conventional vacuum processing apparatus.

FIG. 13 is a plan view showing another conventional vacuum processing apparatus.

FIG. 14 is a perspective view illustrating an internal mechanism of FIG.

FIG. 15 is an enlarged perspective view of a main part of FIG.

[Explanation of symbols]

22 substrate 24 rotary table 32 substrate holder 50 single wafer type vacuum processing device 51 first single wafer processing vacuum machine (first satellite) 52 second single wafer processing vacuum machine (second satellite) 53 third wafer Leaf type vacuum processing machine (third satellite) 57 Preparation chamber 60 First transfer chamber 65 Second transfer chamber 69 Ejection chamber 72 Substrate supply room 73a Isolation room 73b Isolation room 73c Isolation room 73d Isolation room 76 Preparation room body 77 Ejection room body 96a Substrate support member 96b Substrate support member 97a Transport member 97b Transport member 98 Relay member 99a Lock valve 99b Lock valve 101a Opening 101b Opening 123 Substrate supply chamber 129 Lock valve 134 Opening

Claims (3)

[Claims] 1. A plurality of substrate holders arranged at equal angular intervals on an outer peripheral edge of a rotary table, a plurality of vacuum processing chambers arranged immediately above the respective substrate holders, and the rotary table being rotated. A plurality of single-wafer type vacuum processing machines each comprising a first driving mechanism for driving and a second driving mechanism for vertically moving the rotary table are provided, and the first single-wafer type vacuum processing machine is arranged in the order of vacuum processing steps. At least one vacuum processing chamber of the plurality of vacuum processing chambers serves as a charging chamber, and at least one other vacuum processing chamber serves as a transfer chamber, and the second single-wafer processing machine has the plurality of vacuum processing chambers. At least one vacuum processing chamber of the chambers is used as a first transfer chamber, and at least one other vacuum processing chamber is used as a second transfer chamber. Similarly, the third single-wafer processing machine has the plurality of vacuum processing chambers. Vacuum processing of at least one of the processing chambers The chamber is referred to as a first transfer chamber, the other at least one vacuum processing chamber is referred to as a second transfer chamber, and hereinafter, the fourth, fifth, ... The second transfer chamber of the n-th single-wafer type vacuum processing machine is an extraction chamber, and the rotary table is rotated by a predetermined angle by the first and second drive mechanisms. A predetermined distance is raised to vacuum-insulate the vacuum processing chambers so as to perform a predetermined vacuum processing.
Through the transfer chamber and the first transfer chamber of the second single-wafer vacuum processing machine, the first transfer chamber of the second single-wafer vacuum processing machine, In the vacuum processing chamber, the substrate holder is sequentially supported by the driving of the first and second driving mechanisms, and vacuum insulation is performed to perform the second vacuum processing, and the substrate subjected to the second vacuum processing is The first transfer chamber of the third single-wafer processing machine via the second transfer chamber and the first transfer chamber of the third single-wafer processing machine.
The transfer chamber and the respective vacuum processing chambers are sequentially supported by the substrate holder by being driven by the first and second drive mechanisms, and vacuum insulation is performed to perform a third vacuum processing. After the fourth, fifth, ..., N-th vacuum processing is similarly performed via the first transfer chamber of the fourth single-wafer processing machine, outside the extraction chamber. To take out the first to nth vacuum-processed substrates,
A common first isolation chamber is provided between the transfer chamber of the first single-wafer vacuum processing machine and the first transfer chamber of the second single-wafer vacuum processing machine, and the first isolation chamber is provided. Inside the first
For transferring a substrate from the transfer chamber of the single-wafer processing machine to the first transfer chamber of the second single-wafer vacuum processing machine
A pair of first lock valves for vacuum-insulating the conveying means and the inside of the first single-wafer processing machine and the second single-wafer processing machine from each other are provided, and the first locking valve is A first valve plate for opening and closing a pair of first openings formed in the wall of the first isolation chamber, and the first isolation chamber and the transfer chamber of the first single-wafer vacuum processing machine; And the first transfer chamber of the second single-wafer type vacuum processing machine can be alternately vacuum-insulated, and the second transfer chamber of the second single-wafer type vacuum processing machine and the second transfer chamber of the second single-wafer type vacuum processing machine. A common second isolation chamber is provided between the second transfer chamber of the third single-wafer type vacuum processing machine and the second transfer chamber of the second single-wafer type vacuum processing machine. Second transfer means for transferring a substrate from the first transfer chamber to the first transfer chamber of the third single-wafer vacuum processing machine, and the second single-wafer vacuum processing machine A pair of second lock valves for vacuum-insulating the inside and the inside of the third single-wafer type vacuum processing machine are provided, and the second lock valves are a pair of first lock valves formed on a wall portion of the second isolation chamber. A second valve plate for opening and closing two openings, and the second isolation chamber and the second transfer chamber of the second single-wafer processing machine, and the second isolation chamber and the third sheet. The first transfer chamber of the leaf type vacuum processing machine can be alternately vacuum insulated, and the second transfer chamber of the third single-wafer type vacuum processing machine and the first of the fourth single-wafer type vacuum processing machine. A common third isolation chamber is provided between the transfer chamber and the transfer chamber, and the third transfer chamber from the second transfer chamber of the third single-wafer processing machine to the fourth single-wafer vacuum processing machine. Third transfer means for transferring the substrate to the first transfer chamber, inside the third single wafer processing vacuum processing machine, and the fourth single wafer processing vacuum machine DOO cross a pair of third locking valve to vacuum insulation and third locking third valve of the pair formed in the wall portion of the third isolation chamber
A third valve plate for opening and closing the opening is provided, and the third isolation chamber and the second transfer chamber of the third single-wafer processing machine, and the third isolation chamber and the fourth single-wafer. The first transfer chamber of the vacuum type vacuum processing machine can be alternately vacuum insulated,
Similarly, the fourth, fifth, ..., (n-1) th isolation chambers are configured so that the inside of each of the single-wafer type vacuum processing machines is always phase vacuum insulated. Vacuum processing equipment. 2. The first to (n-1) th transporting means are respectively driven in the vertical direction through the opening, and are driven in the horizontal direction with a pair of substrate supporting members capable of supporting the substrate. And a transfer member capable of transferring the substrate to and from the substrate support member, and a relay member that is driven in the vertical direction and relays the transfer of the substrate between the pair of transfer members. The single-wafer processing apparatus according to claim 1. 3. A plurality of substrate holders arranged at equal angular intervals on the outer peripheral edge of the rotary table, a plurality of vacuum processing chambers arranged immediately above the respective substrate holders, and the rotary table being rotated. A plurality of single-wafer type vacuum processing machines each comprising a first driving mechanism for driving and a second driving mechanism for vertically moving the rotary table are provided, and the first single-wafer type vacuum processing machine is arranged in the order of vacuum processing steps. At least one vacuum processing chamber of the plurality of vacuum processing chambers serves as a charging chamber, and at least one other vacuum processing chamber serves as a transfer chamber, and the second single-wafer processing machine has the plurality of vacuum processing chambers. At least one vacuum processing chamber of the chambers is used as a first transfer chamber, and at least one other vacuum processing chamber is used as a second transfer chamber. Similarly, the third single-wafer processing machine has the plurality of vacuum processing chambers. Vacuum processing of at least one of the processing chambers The chamber is referred to as a first transfer chamber, the other at least one vacuum processing chamber is referred to as a second transfer chamber, and hereinafter, the fourth, fifth, ... The second transfer chamber of the n-th single-wafer type vacuum processing machine is an extraction chamber, and the rotary table is rotated by a predetermined angle by the first and second drive mechanisms. A predetermined distance is raised to vacuum-insulate the vacuum processing chambers so as to perform a predetermined vacuum processing.
Through the transfer chamber and the first transfer chamber of the second single-wafer vacuum processing machine, the first transfer chamber of the second single-wafer vacuum processing machine, In the vacuum processing chamber, the substrate holder is sequentially supported by the driving of the first and second driving mechanisms, and vacuum insulation is performed to perform the second vacuum processing, and the substrate subjected to the second vacuum processing is The first transfer chamber of the third single-wafer processing machine via the second transfer chamber and the first transfer chamber of the third single-wafer processing machine.
The transfer chamber and the respective vacuum processing chambers are sequentially supported by the substrate holder by being driven by the first and second drive mechanisms, and vacuum insulation is performed to perform a third vacuum processing. After the fourth, fifth, ..., N-th vacuum processing is similarly performed via the first transfer chamber of the fourth single-wafer processing machine, outside the extraction chamber. To take out the first to nth vacuum-processed substrates,
A common isolation chamber is provided between the loading chamber and / or the unloading chamber and a substrate supply chamber that can communicate with the outside of the single-wafer type vacuum processing machine, and the loading chamber and / or the isolation chamber is provided inside the isolation chamber. A transfer means for transferring the substrate between the take-out chamber and the substrate supply chamber, and a pair of lock valves for vacuum-insulating the loading chamber and / or the take-out chamber and the substrate supply chamber from each other are provided. The valve includes a valve plate for opening and closing a pair of openings formed in the wall of the isolation chamber, and the isolation chamber and the charging chamber and / or the extraction chamber, and the isolation chamber and the substrate supply chamber. The single-wafer type vacuum processing apparatus is characterized in that it can be alternately vacuum-insulated, and the inside and outside of each of the single-wafer type vacuum processing machines are always phase-vacuum insulated.