JPH08255744A - Circuit pattern transfer method of semiconductor device and device used for it - Google Patents

Abstract

PURPOSE: To obtain desired accuracy by making first, second and third holding means support the same two opposing sides of an original pattern, respectively. CONSTITUTION: In a drawing device, a reticle 1 is supported in a direction of an arrow 5 by pressing it to a reference piece provided to a reticle holder upper part from a holder lower part so that a drawing surface becomes a reference. Here, a reticle holding part 4 of a reticle holder of a drawing device, a reticle holding part 4 of a coordinate position measuring device and a reticle holding part 4 of a transfer device are provided each at the same position as the reticle 1. Furthermore, a pattern surface when held is divided up and down. It is enlarged in a drawing device and a coordinate position measuring device and is reduced in a transfer device by a dead-weight.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit pattern transfer method for a semiconductor device, which transfers a circuit pattern onto a semiconductor wafer or the like by using an original pattern such as a mask or reticle on which an original image of the circuit pattern of the semiconductor device is formed. The present invention relates to a transfer device.

[0002]

2. Description of the Related Art In recent years, circuit line widths required for semiconductor devices have become narrower with higher integration of LSIs. In the manufacturing process of these semiconductor devices, dozens of types of original image patterns (reticles or masks) on which desired circuit patterns are formed are accurately aligned and transferred to an exposure area provided on a wafer. The means of doing is adopted.

Usually, the original image pattern is reduced to about 1/5 or 1/4 and transferred, and a projection exposure apparatus having a highly accurate optical system is used as the transfer means. The wafer is fixed on a highly accurate XY stage so that the entire surface of the wafer, which is the material to be exposed, can be exposed. The transfer device is also called a stepper because the wafer is step-and-repeat with respect to the reduction projection optical system. The original pattern used in the stepper is formed as a Cr pattern on a glass substrate finished with high precision. The glass substrate provided with this pattern is called a reticle or mask.

Usually, for drawing a pattern on a reticle, a glass substrate having Cr vapor-deposited on one side and a resist as a photosensitizer uniformly applied is used. In addition to this, according to the desired design data of the circuit pattern, an energy beam using a focused particle beam, electron beam, laser, or the like as a light source,
Scan the entire surface. By removing the resist in the portion where the resist irradiated with the energy beam is exposed or not exposed, it becomes a mask for the Cr etching in the lower layer of the resist. Furthermore, C
After the etching of r is completed, the resist used for suppressing the etching is removed to obtain a reticle having a desired Cr pattern. Further, in this drawing apparatus, one pattern is formed by connecting narrowed beam spots or by scanning, so that it is possible to form a pattern with high accuracy depending on beam control. Therefore, such a drawing apparatus is used in a process requiring a highly accurate pattern such as a reticle.

The reticle or mask on which a pattern is drawn is repeatedly transferred to a plurality of areas in a short time by a stepper. Therefore, it is indispensable to improve yield in circuit pattern transfer by confirming that the reticle or mask is finished with desired dimensional accuracy before being used for exposure and inspecting for pattern defects. Therefore, generally, a coordinate measuring machine or the like is used to evaluate the distortion and the like over the entire pattern area by using marks around the pattern area of the reticle.

Further, there is a defect inspection apparatus as a tool for evaluating whether or not the pattern itself drawn in the pattern area has no defects and is drawn as designed. This is to compare a design value and a real pattern at a desired position by comparing pattern information taken from a sensor such as a CCD from a reticle or a mask with a database of design values.

Further, the reticle or mask determined to have a defect by the defect inspection apparatus can be repaired by removing or filling the defective portion with a focused particle beam such as an ion beam.

General lithographic steps up to this point
For details of the procedure, see, for example, “Integrated Circuit Process Technology Series: Semiconductor Lithography Technology” by Koichiro Hotori, Industrial Books.

Usually, in a particle beam, an electron beam, or a laser drawing apparatus or a defect correction apparatus, in order to draw / correct the entire surface or a part of the reticle, it is fixed on an XY stage through a removable mechanism. At this time, the reticle is bent by its own weight and has a shape as shown in FIGS. 6 and 9. In the drawing device or the defect repairing device, when the particle beam or the electron beam is used as the light source, it is necessary to keep the beam trajectories in a vacuum in the device. Therefore, as a method for fixing the reticle, a means utilizing electrostatic force such as an electrostatic chuck or a mechanical means such as clamping is used. Further, in a drawing apparatus using a laser beam, drawing can be performed in the atmosphere, so that the restraining force against the horizontal deviation is generated only by the frictional force of the vacuum chuck or its own weight.

On the other hand, with respect to the drawn reticle, the position coordinates of the pattern are evaluated by the coordinate position measuring machine. At this time, the reticle is placed with the pattern surface facing upward and is bent by its own weight, and thus has a shape as shown in FIG. Since the normal coordinate measurement is performed in the atmosphere, a vacuum chuck or a means such as having a restraining force against a horizontal shift only by a frictional force due to its own weight is adopted as a fixing means.

In the defect inspection apparatus, the reticle is placed with the pattern down, as in the case of the transfer apparatus, and the reticle bent by its own weight takes the shape shown in FIG. At this time, in the defect inspection apparatus or the transfer apparatus, as a fixing means, a means such as a vacuum chuck or a means having a restraining force against a horizontal shift only by a frictional force due to its own weight is adopted.

Conventionally, a reticle becomes a product through a history of shapes as shown in FIGS. 6 to 10. However, since the reticle has a different sectional shape in each case, positional distortion of the pattern occurs and desired dimensional accuracy is obtained. There is a possibility that the reticle, which should have been drawn with, cannot obtain the desired accuracy in the coordinate measuring device. In addition, in the defect inspection system, the pattern may expand or contract due to the reticle shape change, or distortion may occur due to the different fixing method, and there may be many discrepancies with the design data, and the desired defect inspection accuracy may not be cleared. There is. Further, also in the transfer device, as in the case of the defect inspection device, due to the expansion and contraction of the pattern due to the reticle shape change or the distortion caused by the different fixing method and position,
There is a possibility that the desired alignment accuracy may not be obtained.

As a method for eliminating the influence of the expansion and contraction of the pattern due to the shape change of the reticle or the distortion caused by the different fixing method and position, the shape of the substrate when the reticle is placed on the transfer device or the defect inspection device is adopted. In order to obtain the desired accuracy, the reticle shapes when fixed to the drawing device and when fixed to the transfer device are approximated by polynomials, and the difference between the polynomials is taken to determine the amount by which the pattern position shifts due to changes in the reticle shape in advance. There is a method of calculating and correcting at the time of drawing.

In this case, the reticle shapes when fixed to the coordinate measuring device and when fixed to the transfer device or the defect inspection device are approximated by polynomials, and the difference of the polynomials is taken to change the pattern position. The amount of deviation is calculated in advance and taken into consideration when measuring coordinates. According to such a method, it is possible to judge whether the reticle is good or bad based on the coordinate measurement result before the transfer or the defect inspection.

It is possible to efficiently obtain a reticle with high accuracy by performing correction based on strict approximation between each device using the above method. However, in order to obtain a polynomial for correction, it is necessary to measure the height distribution of the reticle surface in each device each time, which takes significantly longer than when no correction is performed.

With respect to this, for example, a method of holding an average value of height distributions of a plurality of reticles as data representative of an arbitrary reticle is conceivable. However, in this case, since the correction amount is obtained by using a typical reticle, the desired accuracy is obtained when the error between the height distribution of an arbitrary mask and the average value of the length measuring device as the correction amount is large. There is a risk that you will not get it.

[0017]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the prior art, and improves reliability of an original image pattern used in a transfer device, and uses such an original image pattern to form a semiconductor. It is intended to provide a technique capable of transferring a circuit pattern of a semiconductor device onto a wafer with a high yield.

[0018]

The present invention comprises the following first to sixth aspects. A first aspect of the present invention shows improvement of support of an original image pattern in a drawing process, a coordinate position measuring process and a transfer process in a method for forming a circuit pattern of a semiconductor device.

According to the first aspect of the present invention, the original image pattern substrate is supported by at least the first supporting means, and an arbitrary semiconductor device circuit pattern is drawn on the original image pattern substrate to form the original image pattern. And a coordinate position measuring step of measuring the position coordinates of the circuit pattern drawn on the original image pattern by supporting the original image pattern using the second supporting means, and the original image pattern by the third supporting means. And a transfer step of transferring the circuit pattern onto a semiconductor wafer by using the above-mentioned first supporting means, the second supporting means and the third supporting means.
The method for forming a semiconductor circuit pattern is characterized in that each of the supporting means supports the same two opposite sides of the original image pattern.

A second aspect of the present invention is to improve the support of the original pattern in the drawing step, the coordinate position measuring step, the defect inspecting step and the transferring step in the circuit pattern forming method of the semiconductor device.

According to the second aspect of the present invention, the original image pattern substrate is supported by using at least the first supporting means, and an arbitrary semiconductor device circuit pattern is drawn on the original image pattern substrate to form the original image pattern. And a coordinate position measuring step of measuring the position coordinates of the circuit pattern drawn on the original image pattern by supporting the original image pattern using the second supporting means, and the original image pattern by the third supporting means. A defect inspecting step of inspecting the circuit pattern for a defect and a transfer step of supporting the original pattern by a fourth supporting means and transferring the circuit pattern onto a semiconductor wafer. In the method for forming a semiconductor circuit pattern, the first supporting means, the second supporting means, the third supporting means and the fourth supporting means each have the same two opposite sides of the original pattern. Method of forming a semiconductor circuit pattern which is characterized in that lifting is provided.

A third aspect of the present invention is to improve the support of an original image pattern in a drawing process, a coordinate position measuring process, a defect inspection process, a defect repairing process and a transfer process in a circuit pattern forming method for a semiconductor device. is there.

According to the third aspect of the present invention, the original image pattern substrate is supported by at least the first supporting means, and an arbitrary semiconductor device circuit pattern is drawn on the original image pattern substrate to create the original image pattern. And a coordinate position measuring step of measuring the position coordinates of the circuit pattern drawn on the original image pattern by supporting the original image pattern using the second supporting means, and the original image pattern by the third supporting means. A defect inspecting step of supporting the circuit pattern with a defect by inspecting the circuit pattern for defects, a defect repairing step of supporting the defect-examined original image pattern with a fourth supporting means, and correcting a defective portion; And a step of supporting the corrected original image pattern using a fifth supporting means and transferring the corrected circuit pattern onto a semiconductor wafer. The first supporting means, the second supporting means, the third supporting means, the fourth supporting means, and the fifth supporting means each support the same two opposite sides of the original image pattern. A method of forming a semiconductor circuit pattern is provided.

According to the fourth aspect of the present invention, first supporting means for supporting the original pattern substrate, and an arbitrary semiconductor device circuit pattern is drawn on the original pattern substrate supported by the first supporting means. Drawing means for creating an original image pattern, second supporting means for supporting the original image pattern, and second
Coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn on the original pattern supported by the supporting means, third supporting means for supporting the original pattern, and supported by the third supporting means. In the apparatus for forming a semiconductor circuit pattern, which comprises a transfer means for transferring the circuit pattern onto the semiconductor wafer by using the original pattern, the first supporting means, the second supporting means and the third supporting means are respectively An apparatus for forming a semiconductor circuit pattern is provided, which supports the same place of the original pattern.

According to the fifth aspect of the present invention, first supporting means for supporting the original image pattern substrate, and an arbitrary semiconductor device circuit pattern is drawn on the original image pattern substrate supported by the first supporting means. Drawing means for creating an original image pattern, second supporting means for supporting the original image pattern, and second
Coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn on the original pattern supported by the supporting means, third supporting means for supporting the original pattern, and supported by the third supporting means. Defect inspecting means for inspecting the presence or absence of a defect in the circuit pattern, fourth supporting means for supporting the original image pattern, and transferring the circuit pattern on the original image pattern supported by the fourth supporting means onto a semiconductor wafer. In the method for forming a semiconductor circuit pattern, which comprises a transfer means for
An apparatus for forming a semiconductor circuit pattern is provided, wherein the first supporting means, the second supporting means, the third supporting means and the fourth supporting means each support the same place of the original image pattern. It

According to the sixth aspect of the present invention, first supporting means for supporting the original pattern substrate, and an arbitrary semiconductor device circuit pattern is drawn on the original pattern substrate supported by the first supporting means. Drawing means for creating an original image pattern, second supporting means for supporting the original image pattern, and second
Coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn in the original pattern supported by the supporting means, third supporting means for supporting the original pattern, and the third supporting means supported by the third supporting means. Defect inspection means for inspecting the presence or absence of a defect in the circuit pattern drawn in the original image pattern, fourth supporting means for supporting the original image pattern subjected to the defect inspection, and on the original image pattern supported by the fourth supporting means. Defect repairing means for repairing a defective portion of a circuit pattern, fifth supporting means for supporting the original image pattern with corrected defects, and circuit on a semiconductor wafer using the original image pattern supported by the fifth supporting means. A semiconductor circuit pattern forming apparatus comprising: a transfer unit that transfers a pattern, wherein the first support unit, the second support unit, the third support unit, the fourth support unit, and the fifth support unit. Lifting means, respectively, forming device of the semiconductor circuit pattern, characterized in that to support the same location of the original pattern.

Further, the following seventh to eighteenth aspects can be mentioned as preferable aspects of the present invention. 7th of this invention
In the method of forming a circuit pattern of a semiconductor device, the second aspect shows an improvement in the support of the original pattern in the drawing step and the coordinate position measuring step.

According to the seventh aspect of the present invention, the original image pattern substrate is supported by using at least the first supporting means, and an arbitrary semiconductor device circuit pattern is drawn on the original image pattern substrate to create the original image pattern. And a step of supporting the original image pattern using a second supporting means and measuring the position coordinates of the circuit pattern drawn on the original image pattern. There is provided a method of forming a semiconductor circuit pattern, characterized in that the first supporting means and the second supporting means respectively support the same place of the original image pattern.

An eighth aspect of the present invention shows improvement in supporting an original image pattern in a drawing step and a transfer step in a circuit pattern forming method for a semiconductor device. According to the eighth aspect of the present invention, a drawing step of supporting the original image pattern substrate using at least the first supporting means, and drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate to create the original image pattern. And a transfer step of supporting the original pattern with a second supporting means and transferring the circuit pattern onto a semiconductor wafer, wherein the first supporting means and the second supporting means are provided. There is provided a method for forming a semiconductor circuit pattern, characterized in that each means supports the same place of the original pattern.

A ninth aspect of the present invention is to improve the support of the original image pattern in the coordinate position measuring step and the defect inspection step in the method for forming a circuit pattern of a semiconductor device.

According to the ninth aspect of the present invention, the coordinates for supporting at least the original image pattern of the circuit of the semiconductor device by using the first supporting means and measuring the position coordinates of the circuit pattern drawn on the original image pattern. In the method of forming a semiconductor circuit pattern, which comprises a position measuring step and a defect inspection step of supporting the original pattern by using a second means and inspecting the circuit pattern for defects, the first supporting means. And the second supporting means respectively support the same place of the original image pattern, thereby providing a method for forming a semiconductor circuit pattern.

A tenth aspect of the present invention is to improve the support of the original image pattern in the coordinate position measuring step and the defect correcting step in the circuit pattern forming method for a semiconductor device.

According to the tenth aspect of the present invention, the step of supporting at least the original image pattern of the circuit of the semiconductor device using the first supporting means and measuring the position coordinates of the circuit pattern drawn on the original image pattern. And a defect repairing step of repairing a defect portion of the circuit pattern by supporting the original image pattern using second supporting means, the first supporting means and the second supporting means. The method for forming a semiconductor circuit pattern is characterized in that the supporting means supports the same two opposite sides of the original image pattern.

An eleventh aspect of the present invention is to improve the support of the original pattern in the coordinate position measuring step and the transfer step in the circuit pattern forming method for a semiconductor device.

According to the eleventh aspect of the present invention, at least the original image pattern of the circuit of the semiconductor device is supported by the first supporting means, and the position coordinate of the circuit pattern drawn on the original image pattern is measured. A method of forming a semiconductor circuit pattern, comprising: a coordinate measuring step; and a transfer step of supporting the original image pattern using a second means and transferring the circuit pattern onto a semiconductor wafer. There is provided a method for forming a semiconductor circuit pattern, wherein each of the two supporting means supports the same two opposite sides of the original image pattern.

A twelfth aspect of the present invention is to improve the support of the original pattern in the defect inspection step and the defect correction step in the circuit pattern forming method for a semiconductor device.

According to the twelfth aspect of the present invention, at least the original pattern of the circuit of the semiconductor device is supported by the first supporting means, and the circuit pattern drawn on the original pattern is inspected for defects. A method of forming a semiconductor circuit pattern, comprising: a defect inspection step; and a defect repairing step of repairing a defective portion by supporting the original pattern with a second supporting means, the first supporting means and the second supporting means. There is provided a method of forming a semiconductor circuit pattern, wherein each of the supporting means supports the same two opposite sides of the original image pattern.

According to the thirteenth aspect of the present invention, first supporting means for supporting the original pattern substrate, and an arbitrary semiconductor device circuit pattern is drawn on the original pattern substrate supported by the first supporting means. Drawing means to create original pattern,
Second supporting means for supporting the original pattern, and the second supporting means.
A semiconductor circuit pattern forming apparatus comprising coordinate position measuring means having means for measuring the position coordinates of the circuit pattern drawn on the original image pattern supported by the supporting means in the first supporting means and the second supporting means. There is provided an apparatus for forming a semiconductor circuit pattern, characterized in that each means supports the same place of the original pattern.

According to the fourteenth aspect of the present invention, first supporting means for supporting the original pattern substrate, and an arbitrary semiconductor device circuit pattern is drawn on the original pattern substrate supported by the first supporting means. Drawing means for creating an original image pattern, second supporting means for supporting the original image pattern, and second
In the apparatus for forming a semiconductor circuit pattern, which comprises a transfer means for transferring a circuit pattern onto a semiconductor wafer by using the original image pattern supported by the support means, the first support means and the second support means are each An apparatus for forming a semiconductor circuit pattern is provided, which supports the same place of the original pattern.

According to the fifteenth aspect of the present invention, first supporting means for supporting the original image pattern of the circuit of the semiconductor device, and position coordinates of the circuit pattern drawn on the original image pattern supported by the first supporting means. A semiconductor circuit including coordinate position measuring means for measuring the original image pattern, second means for supporting the original image pattern, and defect inspection means for inspecting the circuit pattern on the original image pattern supported by the second means for defects. In the pattern forming method, there is provided a semiconductor circuit pattern forming apparatus, wherein the first supporting means and the second supporting means respectively support the same place of the original image pattern.

According to the sixteenth aspect of the present invention, the first supporting means for supporting the original image pattern of the circuit of the semiconductor device, and the position coordinates of the circuit pattern drawn on the original image pattern supported by the first supporting means. A semiconductor comprising coordinate position measuring means for measuring the original image pattern, second supporting means for supporting the original image pattern, and defect correcting means for correcting defects in the circuit pattern on the original image pattern supported by the second supporting means. In the circuit pattern forming apparatus, there is provided a semiconductor circuit pattern forming apparatus, wherein the first supporting means and the second supporting means respectively support the same place of the original image pattern. According to this aspect, the first supporting means for supporting the original image pattern of the circuit of the semiconductor device, and the position coordinates of the circuit pattern drawn on the original image pattern supported by the first supporting means are measured. A semiconductor circuit pattern including coordinate position measuring means for measuring, second means for supporting the original pattern, and transfer means for transferring the circuit pattern to the semiconductor wafer using the original pattern supported by the second means. In the forming apparatus, the first supporting means and the second supporting means are
An apparatus for forming a semiconductor circuit pattern is provided, each of which supports the same place of an original pattern.

According to the eighteenth aspect of the present invention, the first supporting means for supporting the original image pattern of the circuit of the semiconductor device, and the defect of the circuit pattern drawn on the original image pattern supported by the first supporting means. Defect inspection means for inspecting the presence or absence of the image, second supporting means for supporting the original image pattern, and defect correcting means for correcting the defective portion of the circuit pattern on the original image pattern supported by the second supporting means. In the semiconductor circuit pattern forming apparatus, the first supporting means and the second supporting means are provided.
There is provided a semiconductor circuit pattern forming apparatus, characterized in that each of the supporting means supports the same place of the original pattern.

[0043]

According to the seventh and thirteenth, tenth and sixteenth aspects of the present invention, in the drawing step for forming the circuit pattern of the semiconductor device, the coordinate position measuring step and the defect correcting step, the original image pattern is used as the supporting means. When it is supported by, it is also flexed by its own weight, so that the shape of the substrate surface changes little and the pattern on the substrate surface is not distorted or displaced. Therefore, the circuit pattern can be transferred with high accuracy. The state of supporting the original image pattern in the drawing process, the coordinate position measurement process and the defect correction process,
These are shown in FIGS. 1, 2 and 4, respectively. As shown in the figure, in these steps, since the original pattern is supported at the same place with the pattern surface facing upward, the original pattern bends in the same manner by its own weight.

According to the first to sixth, eighth, ninth, eleventh, twelfth, fourteenth, fifteenth, seventeenth and eighteenth aspects of the present invention, the original image pattern supports the same place. However, the top and bottom of the pattern surface are opposite. In these modes, FIGS. 1, 2 and 4 with the pattern surface on the top, FIG. 3 showing a state of supporting the original image pattern in the defect inspection step with the pattern surface on the bottom, and supporting the original image pattern in the transfer step. 5 is shown in combination with FIG.
However, by being supported in the same place,
Since the positional deviation can be easily corrected, the circuit pattern can be accurately transferred.

[0045]

EXAMPLES A method of supporting a reticle used in the first and fourth aspects of the present invention will be described with reference to FIGS. 1, 2 and 4. In the drawing apparatus, the reticle 1 is attached to the reference piece provided on the reticle holder so that the drawing surface serves as a reference.
Is supported in the direction of arrow 5 by pressing from below the holder. At this time, the drawing area 2 has a shape as shown in FIG. 1 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates (FIG. 11).

In the position coordinate measuring device, the lower part of the reticle is supported in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle holder with the pattern surface facing upward. At this time, the drawing area is the reticle 1.
The deflection due to its own weight results in the shape shown in FIG. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing apparatus (FIG. 11).

In the transfer device, the vacuum chuck part provided on the upper part of the reticle stage and the lower part of the reticle are attracted with the pattern surface facing down, and the transfer device is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 5 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates (FIG. 12).

Here, the reticle support part 4 of the reticle holder of the drawing device, the reticle support part 4 of the coordinate position measuring device and the reticle support part 4 of the transfer device are respectively attached to the reticle 1.
When they are provided at the same position, the pattern surface when supported is divided into upper and lower parts, so that the drawing device and the coordinate position measuring device enlarge and the transfer device reduces due to its own weight. But by using a thick mask,
The amount of dimensional change due to its own weight can be reduced. Therefore, when the support positions are set to be the same place, the bending is similarly caused by its own weight, so that it is possible to draw the pattern 2 and measure the dimensions of the pattern 2 in the same state as when the pattern was transferred.

According to these series of sequences, although there is a possibility that a dimensional error may occur due to the difference in expansion / contraction direction of the pattern caused by the deflection by its own weight, the support points 4 are the same across the front and back surfaces of the reticle 1. Since it is performed at a place, there is no fear that other error components will occur. Therefore, it is very effective for improving the dimensional accuracy of the pattern transferred by the transfer device.

Next, a method of supporting the reticle used in the second and fifth aspects of the present invention will be described with reference to FIGS. 1, 2, 3, and 5. In the drawing apparatus, the reticle 1 is supported in the direction of arrow 5 by pressing the reticle 1 from the lower part of the holder against a reference piece provided on the upper part of the reticle holder so that the drawing surface serves as a reference. At this time, the drawing area has a cross-sectional shape as shown in FIG. 1 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when evaluated by the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates (FIG. 11).

In the position coordinate measuring device, the reticle lower part is supported in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle holder with the pattern surface facing upward. At this time, the drawing area 2 has a shape as shown in FIG. 2 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 1 is evaluated based on the absolute plane reference, the drawn pattern 1 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing apparatus (FIG. 11).

In the defect inspection apparatus, the reticle lower part is held in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down. At this time, the drawing area 2 has a shape as shown in FIG. 3 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates (FIG. 12).

In the transfer device, the lower part of the reticle is attracted to the vacuum chuck portion provided on the upper part of the reticle stage with the pattern surface facing down, and is supported in the direction shown by arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 5 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 1 is evaluated by the absolute plane reference, the drawn pattern 1 becomes a pattern 1 which is contracted from the design coordinates as in the case of the defect inspection apparatus (FIG. 12).

Here, if the reticle support part 4 of the reticle holder of the drawing device, the reticle support part 4 of the coordinate position measuring device, the reticle support part 4 of the defect inspection device, and the reticle support part 4 of the transfer device are the same, support Since the pattern surface when divided is vertically divided, the pattern surface is enlarged by the drawing device and the coordinate position measuring device and reduced by the defect inspection device and the transfer device by its own weight. However, by using a thick mask, the dimensional change due to its own weight can be reduced.

According to this series of sequences, although there is a dimensional error due to the difference in the expansion and contraction directions of the pattern caused by the deflection by its own weight, the support point 4 is performed at the same place with the front surface and the back surface of the reticle sandwiched. , And there is no fear of generating other error components. Therefore, it is very effective for improving the dimensional accuracy of the pattern transferred by the transfer device.

According to the third and sixth aspects of the present invention, it is most desirable to take the history of the reticle cross-sectional shape as shown in FIGS. These figures show that the reticle 1 used in the transfer device in the present invention is a drawing device, a position coordinate measuring device, a defect inspection device, and a defect repair device, respectively, for drawing the reticle 1, measuring dimensional accuracy, defect inspection, and defect repair. 6 shows a history of the cross-sectional shape when the reticle is fixed when the above procedure is performed.

In the drawing apparatus, the reticle 1 is supported in the direction indicated by the arrow 5 by pressing the reticle 1 from the lower part of the holder against the reference piece provided on the upper part of the reticle holder so that the drawing surface serves as a reference. At this time, drawing area 2
Will have a cross-sectional shape as shown in FIG. 1 due to the deflection of the reticle 1 due to its own weight. Therefore, at this time, when the evaluation is performed using the absolute plane reference, the drawn pattern becomes a pattern that is stretched beyond the design coordinates (see FIG. 1).
1).

In the position coordinate measuring device, the reticle lower part is supported in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle holder with the pattern surface facing upward. At this time, the drawing area 2 has a shape as shown in FIG. 2 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when evaluated based on the absolute plane reference, the drawn pattern becomes a pattern that is stretched more than the design coordinates as in the case of the drawing apparatus (FIG. 11).

In the defect inspection apparatus, the reticle lower part of the vacuum chuck portion provided on the upper part of the reticle stage is sucked with the pattern surface facing down, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 3 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the evaluation is performed based on the absolute plane reference, the drawn pattern becomes a pattern that is contracted from the design coordinates (FIG. 12).

In the defect correcting apparatus, the reticle 1 is supported in the direction of arrow 5 by pressing the reticle 1 from the lower part of the holder against the reference piece provided on the upper part of the reticle holder so that the pattern surface becomes the reference. At this time, the drawing area 2 has a shape as shown in FIG. 4 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the evaluation is performed using the absolute plane reference, the drawn pattern becomes a pattern that is stretched beyond the design coordinates (see FIG. 1).
1).

In the transfer device, the lower part of the reticle is attracted to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 5 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, the pattern 2 drawn when evaluated on the basis of the absolute plane is a pattern that is contracted from the design coordinates as in the case of the defect inspection apparatus (FIG. 1).
2).

Here, the reticle support part 4 of the reticle holder of the drawing device, the reticle support part 4 of the coordinate position measuring device, the reticle support part 4 of the defect inspection device, the reticle support part 4 of the defect correction device, and the reticle of the transfer device. If the support portions 4 are provided at the same position with respect to the reticle, the pattern surface when supported is divided into upper and lower parts, so that the drawing device, the coordinate position measuring device, and the defect repairing device enlarge by the weight of the reticle, the defect inspection device, and the transfer device. The device reduces the size. However, by using a thick mask, the dimensional change due to its own weight can be reduced. Therefore, when the support positions are set to be the same place, the same deflection is caused by its own weight, so that it is possible to draw a pattern, measure the size of the pattern, and inspect for defects in almost the same state as when transferred.

A method for supporting an original image pattern, for example, a reticle used in the seventh and thirteenth aspects of the present invention will be described with reference to FIGS. 1 and 2. In the drawing apparatus, the reticle 1 is held by pressing the reticle 1 from the lower part of the holder against a reference piece provided on the upper part of the reticle holder so that the drawing surface serves as a reference. At this time, the drawing area has a shape as shown in FIG. 1 due to the bending of the reticle 1 due to its own weight. At this time, the pattern surface is on the top. When this is evaluated by the absolute plane reference, the drawn pattern 2
Becomes a pattern that is stretched more than the design coordinates, and is contracted in the direction of arrow 13 in the horizontal state.
This is shown in FIG.

In the coordinate position measuring device, the lower part of the reticle 1 is attracted to the vacuum chuck part provided on the upper part of the reticle holder with the pattern surface facing upward, and the arrow 5
Supported in the direction of. At this time, the measurement area has a shape as shown in FIG. 2 due to the deflection of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing apparatus (FIG. 11).

Here, the reticle support part 4 of the reticle holder of the drawing device and the reticle support part 4 of the coordinate position measuring device are set at the same position of the reticle 1 and the pattern surface is on the top, so that the pattern surface is enlarged by its own weight.

As a result, the pattern 2 on the reticle 1
Is also deflected by its own weight, and therefore the pattern 2 is also used in the coordinate position measuring device in the same state as when it was drawn.
Can be evaluated. As a result, the drawn pattern 2 is not affected by the dimensional change due to the reticle shape change caused by the change in the supporting position of the reticle 1, and the drawing accuracy of the drawing apparatus can be evaluated with high accuracy, which is very effective.

Next, a method of supporting the reticle used in the eighth and fourteenth aspects of the present invention will be described with reference to FIGS. 1 and 5. In the drawing apparatus, the reticle 1 is supported in the direction of arrow 5 by pressing the reticle 1 from the lower part of the holder against a reference piece provided on the upper part of the reticle holder so that the drawing surface serves as a reference. At this time, the drawing area has a shape as shown in FIG. 1 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates (FIG. 11).

In the transfer device, the lower part of the reticle is held in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down. At this time, the drawing area has a cross-sectional shape as shown in FIG. 5 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates. In the horizontal state, it is stretched as shown by arrow 23. This state is shown in FIG.

If the reticle support 4 of the reticle holder of the drawing device and the reticle support 4 of the measuring device are installed on the same location side of the reticle 1, the pattern surface is divided into upper and lower parts, and the patterns are enlarged or reduced by their own weight. .

At this time, in FIGS. 1 to 5, when the support points 4 of the respective reticles are arranged at positions of 180 ° rotational symmetry as shown in FIG. The magnification error component is only stretched to the left and right, and can be corrected by the drawing device or the transfer device.

If this error component cannot be ignored, a means of using a thick reticle with a small amount of deflection,
By calculating the pattern displacement amount due to bending by calculation and considering this displacement amount at the time of drawing, that is, the pattern 2 is shortened in the direction in which the substrate is slightly extended from the beginning in consideration of expansion and contraction. It is possible to correct it by drawing on.

Also, in the case of a 120-degree rotational symmetry support point arrangement such as a three-point support as shown in FIG. 14 or a 90-degree rotation symmetry support point for fixing the entire reticle periphery as shown in FIG. In the case of the arrangement, errors of various components such as orthogonality and trapezoidal error may occur in addition to the magnification error component depending on the deflection direction of its own weight.

However, when the main factor that causes the dimensional error as in the present invention is only the self-weight deflection, and when this error component cannot be ignored as in the case of 180-degree rotational symmetry, a thick reticle with a small deflection amount is used. It is possible to use the drawn reticle by means of using it or by calculating the pattern displacement amount due to deflection in advance and taking this displacement amount into consideration at the time of drawing.

As a result, the drawn pattern is not affected by the dimensional change due to the reticle formation change caused by the change in the reticle supporting position, which is very effective for improving the dimensional accuracy of the transferred pattern.

A method for supporting the reticle used in the ninth and fifteenth aspects of the present invention will be described with reference to FIGS. 2 and 3. In the coordinate position measuring device, the reticle lower part is attracted to the vacuum chuck part provided on the reticle holder upper part with the pattern surface facing upward, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 2 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing device (FIG. 1).
1).

In the defect inspection apparatus, the reticle lower part is held in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down. At this time, the drawing area 2 has a shape as shown in FIG. 3 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates (FIG. 12).

Here, by providing the reticle support portion 4 of the reticle holder of the defect inspection device and the reticle support portion 4 of the coordinate position measurement device on the same location side of the reticle 1,
Since the pattern surface is divided into upper and lower parts, it expands and contracts by its own weight. However, by using a thick mask, the dimensional change due to its own weight can be reduced.

Thus, according to the ninth and fifteenth aspects of the present invention, the pattern evaluated by the coordinate position measuring apparatus is less likely to undergo a dimensional change due to a reticle shape change that occurs due to a change in the reticle support position. Therefore, the defect inspection can be performed in consideration of the pattern size obtained from the coordinate position measuring device. That is, it becomes possible to distinguish between a dimensional change caused by a reticle shape change and a pattern defect, which is very effective for improving the pattern defect detection accuracy.

Next, a method of supporting the reticle used in the tenth and sixteenth aspects of the present invention will be described with reference to FIGS. In the coordinate position measuring device, the reticle lower part is attracted to the vacuum chuck part provided on the reticle holder upper part with the pattern surface facing upward, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a cross-sectional shape as shown in FIG. 2 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when evaluated by the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing device (FIG. 11).

In the defect correcting device, the reticle 1 is supported in the direction of arrow 5 by pressing the reticle 1 from the lower part of the holder against the reference piece provided on the upper part of the reticle holder so that the pattern surface serves as a reference. At this time, the drawing area 2 has a sectional shape as shown in FIG. 4 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when evaluated by the absolute plane reference, the drawn pattern 2
Similarly becomes a pattern stretched from the design coordinates (FIG. 11).

Here, the reticle support portion 4 of the defect correction device is used.
When the reticle support portion 4 of the coordinate position measuring device is provided at the same position of the reticle 1, the pattern 2 evaluated by the coordinate position measuring device is subject to dimensional change due to the reticle shape change caused by the change in the reticle supporting position. Since it disappears, it becomes possible to directly feed back the pattern dimension determination result obtained from the coordinate position measuring device and correct the desired defect portion.

That is, since the pattern shape does not change due to the dimensional change accompanying the reticle shape change, the relative positional relationship of the pattern defect portion obtained from the measuring instrument with respect to any pattern coordinate position reference mark in the mask does not change. Therefore, it becomes possible to discriminate between the dimensional change caused by the reticle shape change and the pattern defect, which is very effective for improving the defect correction accuracy.

Next, a method of supporting the reticle used in the eleventh and seventeenth aspects of the present invention will be described with reference to FIGS. In the coordinate position measuring device, the reticle lower part is attracted to the vacuum chuck part provided on the reticle holder upper part with the pattern surface facing upward, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 2 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is stretched beyond the design coordinates as in the case of the drawing apparatus (FIG. 11).

In the transfer device, the reticle lower part is attracted to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down, and is supported in the direction of arrow 5. At this time, the drawing area 2 has a shape as shown in FIG. 5 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when the pattern 2 is evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates (FIG. 12).

Here, the reticle support part 4 of the reticle holder of the transfer device and the reticle support part 4 of the coordinate position measuring device.
When the reticle 1 is at the same position, the pattern surface is divided into upper and lower parts, and the reticle 1 is enlarged or reduced by its own weight.
However, by using a thick mask, the dimensional change due to its own weight can be reduced. Therefore, the pattern 2 can be evaluated in the almost same state as when the pattern 2 is transferred because it is flexed by its own weight. As a result, the transferred pattern 2 is not subject to the dimensional change due to the reticle shape change caused by the change in the reticle support position, and therefore the dimensional accuracy of the transferred pattern can be evaluated with high accuracy, which is very effective. Is.

Next, a method for supporting the reticle used in the twelfth and eighteenth aspects of the present invention will be described with reference to FIGS. 3 and 4. In the defect inspection apparatus, the reticle lower part is supported in the direction of arrow 5 by adsorbing the lower part of the reticle to the vacuum chuck part provided on the upper part of the reticle stage with the pattern surface facing down. At this time, the drawing area 2 has a shape as shown in FIG. 3 due to the bending of the reticle 1 due to its own weight. Therefore, at this time, when evaluated based on the absolute plane reference, the drawn pattern 2 becomes a pattern that is contracted from the design coordinates (FIG. 12).

In the defect repairing apparatus, the reticle 1 is supported in the direction of arrow 5 by pressing the reticle 1 against the reference piece provided on the upper part of the reticle holder from the lower part of the holder so that the pattern surface serves as a reference. At this time, the drawing area 2 has a sectional shape as shown in FIG. 4 due to the bending of the reticle 1 due to its own weight. Therefore, when evaluated by the absolute plane reference at this time, the drawn pattern 2 is
The pattern is extended more than the design coordinates (FIG. 11).

Here, the reticle support part 4 of the reticle holder of the defect inspection device and the reticle support part 4 of the defect correction device.
When the reticle 1 is provided at the same position, the pattern surface is divided into upper and lower parts, so that the pattern surface is reduced or enlarged by its own weight. However, by using a thick mask, the dimensional change due to its own weight can be reduced. Therefore, since it is also bent by its own weight, it becomes possible to correct the pattern defect portion in substantially the same state as when the defect was inspected. As a result, the pattern 2 in which a defect has been inspected does not undergo a dimensional change based on a change in the reticle shape that occurs due to a change in the reticle support position, so that it is possible to surely correct the pattern defective portion in the defect correction device. It is valid.

According to these series of sequences, although there is a degree of dimensional error due to the difference in the expansion and contraction directions of the pattern caused by the deflection due to its own weight, the supporting points are performed at the same place with the front surface and the back surface of the reticle interposed therebetween. There is no fear of generating other error components. Therefore, it is very effective for improving the dimensional accuracy of the pattern transferred by the transfer device.

Examples of the drawing device include an EB drawing device using an electron beam, an ion beam drawing device using an ion beam, and a laser beam drawing device using a laser beam. The transfer device of the present invention can be applied to any transfer device regardless of the type of light source such as X-ray, visible light, electron beam or ion beam. Further, the above-described defect inspection apparatus can be similarly applied to a defect inspection apparatus or the like that inspects the location and type of a defect on a substrate by comparing design data or the same mask. Further substrates include wafers, reticles and X
The same can be applied to a line mask or the like.

[0091]

As described above, according to the present invention, support for fixing a mask existing between devices such as a drawing device, a pattern coordinate position measuring device, a defect inspection device and a transfer device, which have not been considered in the past, is provided. It is possible to reduce the change in the surface shape of the substrate caused by the difference in the position and the elastic deformation of the substrate and the accompanying distortion of the pattern on the surface of the substrate without time and troublesome work. Thus, according to the present invention, the semiconductor circuit pattern can be easily and accurately transferred.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a reticle support position and a reticle shape of a drawing apparatus according to the present invention.

FIG. 2 is an explanatory view showing a reticle support position and a reticle shape of the coordinate position measuring device according to the present invention.

FIG. 3 is an explanatory view showing a reticle support position and a reticle shape of the defect inspection apparatus according to the present invention.

FIG. 4 is an explanatory view showing a reticle support position and a reticle shape of the defect correction device according to the present invention.

FIG. 5 is an explanatory view showing a reticle support position and a reticle shape of the transfer device according to the present invention.

FIG. 6 is an explanatory view showing a reticle support position and a reticle shape of a conventional drawing apparatus.

FIG. 7 is an explanatory view showing a reticle support position and a reticle shape of a conventional coordinate position measuring device.

FIG. 8 is an explanatory view showing a reticle support position and a reticle shape of a conventional defect inspection apparatus.

FIG. 9 is an explanatory view showing a reticle support position and a reticle shape of a conventional defect correction device.

FIG. 10 is an explanatory view showing a reticle support position and a reticle shape of a conventional transfer device.

FIG. 11 is a cross-sectional view of the reticle illustrating that the pattern is stretched with respect to an absolute plane by being supported with the pattern surface facing upward.

FIG. 12 is a cross-sectional view of the reticle illustrating that the pattern is contracted with respect to an absolute plane by being supported with the pattern surface facing down.

FIG. 13 is a plan view illustrating an arrangement of support points that are rotationally symmetrical with respect to 180 degrees.

FIG. 14 is a plan view illustrating the arrangement of support points having 120-degree rotational symmetry.

FIG. 15 is a plan view illustrating the arrangement of support points that are 90-degree rotational symmetry.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Reticle 2 ... Pattern of semiconductor device 3 ... Pattern expansion / contraction direction on the same surface or opposite surface as a support point 4 ... Support point 5 ... Support direction

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Tohru Tojo 1 Komukai Toshiba-cho, Kouki-ku, Kawasaki-shi, Kanagawa Incorporated Toshiba Research and Development Center

Claims (6)

[Claims] 1. A drawing step of supporting an original image pattern substrate using at least a first supporting means, and drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate to create an original image pattern, and a drawing step of the original image pattern. A coordinate position measuring step of supporting with the second supporting means and measuring the position coordinates of the circuit pattern drawn on the original pattern, and supporting the original pattern with the third supporting means, And a transfer step for transferring the same onto a semiconductor wafer. In the method for forming a semiconductor circuit pattern, the first supporting means, the second supporting means and the third supporting means respectively support the same place of the original image pattern. A method for forming a semiconductor circuit pattern, comprising: 2. A drawing step of supporting an original image pattern substrate by using at least a first supporting means, drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate to create an original image pattern, and a drawing step of the original image pattern. A coordinate position measuring step of supporting with the second supporting means and measuring the position coordinates of the circuit pattern drawn on the original pattern, and supporting the original pattern with the third supporting means, In the method for forming a semiconductor circuit pattern, which comprises a defect inspection step of inspecting the presence or absence of defects and a transfer step of supporting the original image pattern using a fourth supporting means and transferring the circuit pattern onto a semiconductor wafer. , The first supporting means,
The method for forming a semiconductor circuit pattern, wherein each of the second supporting means, the third supporting means and the fourth supporting means supports the same location of the original image pattern. 3. A drawing step of supporting an original image pattern substrate using at least a first supporting means, and drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate to create an original image pattern; A coordinate position measuring step of supporting with the second supporting means and measuring the position coordinates of the circuit pattern drawn on the original pattern, and supporting the original pattern with the third supporting means, Defect inspection step for inspecting the presence or absence of defects, a defect correction step for supporting the defect-inspected original image pattern using the fourth supporting means, and correcting the defect portion, and a defect-corrected original image pattern for the fifth step. A method of forming a semiconductor circuit pattern, the method including: a transfer step of transferring the corrected circuit pattern onto a semiconductor wafer by using the supporting means of FIG. Support means, third support means, fourth
5. The method for forming a semiconductor circuit pattern, wherein the supporting means and the fifth supporting means each support the same location of the original image pattern. 4. A first supporting means for supporting the original image pattern substrate, and a drawing means for creating an original image pattern by drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate supported by the first supporting means. A second supporting means for supporting the original pattern, a coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn on the original pattern supported by the second supporting means, and supporting the original pattern. In the apparatus for forming a semiconductor circuit pattern, which comprises a third supporting means and a transfer means for transferring a circuit pattern onto a semiconductor wafer by using the original image pattern supported by the third supporting means, the first supporting means. Means, second supporting means and third
2. The apparatus for forming a semiconductor circuit pattern, wherein each of the supporting means supports the same place of the original pattern. 5. A first supporting means for supporting the original image pattern substrate, and a drawing means for drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate supported by the first supporting means to create an original image pattern. A second supporting means for supporting the original pattern, a coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn on the original pattern supported by the second supporting means, and supporting the original pattern. Third supporting means, defect inspection means for inspecting the circuit pattern supported by the third supporting means for defects, fourth supporting means for supporting the original image pattern, and fourth supporting means. A method for forming a semiconductor circuit pattern, comprising a transfer means for transferring the circuit pattern on the original image pattern supported on the semiconductor wafer to a semiconductor wafer, the first supporting means, the second supporting means, and the third supporting means. The means and the fourth support means are, respectively,
An apparatus for forming a semiconductor circuit pattern, which supports the same place of an original pattern. 6. A first supporting means for supporting the original image pattern substrate, and a drawing means for creating an original image pattern by drawing an arbitrary semiconductor device circuit pattern on the original image pattern substrate supported by the first supporting means. Second supporting means for supporting the original pattern, coordinate position measuring means for measuring the position coordinates of the circuit pattern drawn on the original pattern supported by the second supporting means, and second supporting means for supporting the original pattern. No. 3 support means, defect inspection means for inspecting the circuit pattern drawn on the original image pattern supported by the third support means for defects, and fourth for supporting the defect-inspected original image pattern.
Supporting means, defect correcting means for correcting a defective portion of the circuit pattern on the original pattern supported by the fourth supporting means, fifth supporting means for supporting the original pattern corrected for defects, and 5. A semiconductor circuit pattern forming apparatus comprising: a transfer means for transferring a circuit pattern onto a semiconductor wafer by using the original image pattern supported by the support means in No. 5, and the first support means, the second support means, Third
The fourth supporting means, the fourth supporting means, and the fifth supporting means are
An apparatus for forming a semiconductor circuit pattern, each of which supports the same location of an original pattern.