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JPH0745919A - Circuit board structure - Google Patents

Circuit board structure

Info

Publication number
JPH0745919A
JPH0745919A JP18607093A JP18607093A JPH0745919A JP H0745919 A JPH0745919 A JP H0745919A JP 18607093 A JP18607093 A JP 18607093A JP 18607093 A JP18607093 A JP 18607093A JP H0745919 A JPH0745919 A JP H0745919A
Authority
JP
Japan
Prior art keywords
circuit board
layer
board structure
polyimide
circuit pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18607093A
Other languages
Japanese (ja)
Other versions
JP3248786B2 (en
Inventor
Masayuki Kaneto
正行 金戸
Hitoshi Ishizaka
整 石坂
Munekazu Tanaka
宗和 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP18607093A priority Critical patent/JP3248786B2/en
Publication of JPH0745919A publication Critical patent/JPH0745919A/en
Application granted granted Critical
Publication of JP3248786B2 publication Critical patent/JP3248786B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

Landscapes

  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PURPOSE:To provide a circuit board structure, wherein heat resistance, mechanical strength, size characteristics and the like are made excellent by holding a circuit pattern with polyimide-based resin layers, and only one base-material layer can be removed locally and efficiently. CONSTITUTION:A circuit board structure A, wherein a circuit pattern 2 is held with polyimide-based resin layers 1 and 3 having the different dissolution speeds for etchant, is obtained. Thus, the excellent heat resistance, mechanical strength, size characteristics and the like of the polyimide-based resins are provided on both surfaces. Furthermore, only the polyimide-based resin layer on one side can be removed selectively and efficiently. The circuit board structure having the excellent opening machining property can be applied into the various kinds of applications such as TAB films and flexible printed boards.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ポリイミド系樹脂を基
板および保護膜として用いた回路基板に関し、特に、一
方の面より回路パターンを露出させる開口部の形成が容
易な回路基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board using a polyimide resin as a board and a protective film, and more particularly to a circuit board in which an opening for exposing a circuit pattern from one surface can be easily formed.

【0002】[0002]

【従来の技術】近年、半導体高集積技術と高密度実装技
術の進展に伴い、半導体装置の電極数は増加し、該電極
間ピッチも年々高密度化している。また、この半導体装
置を用いて得られるプリンターや表示装置の解像度やプ
リント回路基板の配線密度も同様に高い水準へと移行し
ている。上記半導体装置は、より薄く、より軽量に形成
することが望まれており、このような半導体装置を構成
する半導体素子の実装方法の一つにフィルムキャリア方
式が採用されている。上記フィルムキャリア方式におけ
る半導体素子とキャリア上に形成された回路との接続方
法としては各種の方法が提案されているが、半導体素子
の電極面またはキャリア面に形成したバンプ状電極を利
用して接続する方法が半導体素子面積での実装が可能あ
り、高密度実装に好ましく、一部で採用実行されてい
る。また、半導体素子をはじめとする各種配線回路の導
通試験を行なう場合にも、バンプ状電極を介してプリン
ト回路基板との導通をとって検査する方式が従来の針式
のメカニカルプローブに比べて、配線形成の自由度や探
針としての耐久性の面から高密度配線に対応できるので
好ましいものである。
2. Description of the Related Art In recent years, the number of electrodes of a semiconductor device has increased with the progress of semiconductor highly integrated technology and high-density packaging technology, and the pitch between the electrodes has also been increased year by year. In addition, the resolution of printers and display devices obtained using this semiconductor device and the wiring density of printed circuit boards have also moved to high levels. The semiconductor device is desired to be thinner and lighter in weight, and the film carrier method is adopted as one of the mounting methods of the semiconductor elements constituting such a semiconductor device. Various methods have been proposed as a method of connecting the semiconductor element and the circuit formed on the carrier in the film carrier method, but connection is performed by using bump-like electrodes formed on the electrode surface of the semiconductor element or the carrier surface. This method can be mounted in a semiconductor element area, is preferable for high-density mounting, and is partially adopted and implemented. Further, even when conducting a continuity test of various wiring circuits such as semiconductor elements, the method of inspecting by conducting with the printed circuit board via the bump-shaped electrodes is compared with the conventional needle-type mechanical probe, This is preferable because it can accommodate high-density wiring in terms of the degree of freedom in wiring formation and the durability as a probe.

【0003】このようなフィルムキャリアやプリント回
路基板においては、耐熱性,機械的強度,寸法安定性等
に優れたポリイミド系樹脂フィルムからなるベース層
に、導体回路パターンを積層した回路基板構造が一般的
に用いられる。そして、その用途や導通形式によって、
回路面上に絶縁樹脂を積層して絶縁保護したり、また
は、これらベース層や絶縁保護層を局部的に除去し、回
路端子を接続用として露出させる必要がある。さらに、
接続に際して容易に位置合わせを行なうため、視覚確認
が可能な形状に加工する場合や、ガイド孔,ガイド溝を
上記ベース層や絶縁保護層に設ける場合も多い。
In such a film carrier or a printed circuit board, a circuit board structure in which a conductor circuit pattern is laminated on a base layer made of a polyimide resin film having excellent heat resistance, mechanical strength and dimensional stability is generally used. Used for. And, depending on its application and conduction type,
It is necessary to laminate an insulating resin on the circuit surface for insulation protection, or to locally remove the base layer and the insulation protection layer to expose the circuit terminals for connection. further,
In order to easily perform the alignment at the time of connection, it is often processed into a shape that allows visual confirmation, and guide holes and guide grooves are often provided in the base layer and the insulating protective layer.

【0004】[0004]

【発明が解決しようとする課題】ところが、回路パター
ンを挟む一方の基材層としてポリイミド系樹脂フィルム
を用いた場合に、該ポリイミド系樹脂よりも耐熱性や寸
法安定性に劣る樹脂を他方の基材層として用いると、該
ポリイミド系樹脂フィルムの優れた特性を十分に発揮さ
せることができないという問題がある。これに対して、
両方の基材層にポリイミド系樹脂を用いると耐薬品性が
等しくなるため、化学エッチング等による、各々の層を
選択的に除去するような方法が使用できなくなる。ま
た、プラズマや紫外線レーザーを用いてエッチングする
方法では、被加工面積に対する加工効率が低く、ランニ
ングコストが高いという問題がある。その他、所望形状
に加工した熱可塑性ポリイミド系樹脂フィルムを貼りつ
ける方法も、位置合わせ精度や作業効率に難があり、産
業用としては受入れ難いものであった。
However, when a polyimide resin film is used as one of the base material layers sandwiching the circuit pattern, a resin having lower heat resistance and dimensional stability than the polyimide resin is used as the other base material layer. If it is used as a material layer, there is a problem that the excellent characteristics of the polyimide resin film cannot be sufficiently exhibited. On the contrary,
If polyimide resins are used for both base material layers, the chemical resistance becomes equal, so that a method of selectively removing each layer by chemical etching or the like cannot be used. Further, the method of etching using plasma or ultraviolet laser has a problem that the processing efficiency with respect to the processed area is low and the running cost is high. In addition, the method of sticking a thermoplastic polyimide resin film processed into a desired shape also has difficulty in alignment accuracy and work efficiency, and is difficult to accept for industrial use.

【0005】本発明の目的は、上記問題を解決し、回路
パターンをポリイミド系樹脂層で挟むことによって、耐
熱性,機械的強度,寸法特性等に優れながら、しかも、
一方の基材層のみを局部的に、かつ、効率的に除去する
ことが可能な回路基板構造を提供することである。
An object of the present invention is to solve the above-mentioned problems and to sandwich a circuit pattern between polyimide resin layers, thereby providing excellent heat resistance, mechanical strength, dimensional characteristics, etc.
It is to provide a circuit board structure capable of locally and efficiently removing only one base material layer.

【0006】[0006]

【課題を解決するための手段】本発明者らは上記目的を
達成すべく鋭意検討を行った結果、エッチング液に対し
て溶解速度の異なるポリイミド系樹脂によって回路パタ
ーンを挟む基板構造とすることにより、樹脂層の所定領
域の除去に、化学エッチング法を容易に用いることがで
きるようになり、高効率で、かつ高精度な開口加工が行
えることを見出し本発明を完成した。即ち、本発明の回
路基板構造は、エッチング液に対して溶解速度の異なる
ポリイミド系樹脂層によって、回路パターンが挟まれて
なるものである。
Means for Solving the Problems As a result of intensive studies to achieve the above-mentioned object, the present inventors have found that a substrate structure in which a circuit pattern is sandwiched by polyimide resins having different dissolution rates in an etching solution is used. The present invention has been completed based on the finding that a chemical etching method can be easily used to remove a predetermined region of a resin layer, and highly efficient and highly accurate opening processing can be performed. That is, in the circuit board structure of the present invention, the circuit pattern is sandwiched by the polyimide resin layers having different dissolution rates in the etching liquid.

【0007】[0007]

【作用】エッチング液に対して溶解速度の異なるポリイ
ミド系樹脂層を用いて回路パターンを挟む回路基板構造
によって、両面がポリイミド系樹脂層でありながら、同
一エッチング液中において、片方の層だけが選択的に除
去される。
[Function] Due to the circuit board structure in which the circuit pattern is sandwiched by the polyimide resin layers having different dissolution rates with respect to the etching solution, only one layer is selected in the same etching solution even though both sides are polyimide resin layers. Will be removed.

【0008】[0008]

【実施例】以下、本発明を実施例に基づき具体的に説明
する。なお、本発明がこれに限定されるものでないこと
は言うまでもない。図1は、本発明の回路基板構造の一
実施例を模式的に示す一部切欠斜視図である。同図にお
いて、Aは本発明の回路基板構造であって、回路パター
ン2が、同一エッチング液に対して溶解速度の相異なる
ポリイミド系樹脂層1,3によって挟まれてなるもので
ある。
EXAMPLES The present invention will be specifically described below based on examples. Needless to say, the present invention is not limited to this. FIG. 1 is a partially cutaway perspective view schematically showing an embodiment of the circuit board structure of the present invention. In the figure, A is a circuit board structure of the present invention, in which a circuit pattern 2 is sandwiched between polyimide resin layers 1 and 3 having different dissolution rates in the same etching solution.

【0009】回路パターン2を挟むポリイミド系樹脂層
1と3は、同一エッチング液に対して溶解速度が相異な
る以外は、形状や機械的性質等において同様のものであ
ってもよいが、通常は溶解速度の遅い方の層をベース
層、溶解速度の速い方の層を保護層とする場合が多い。
ベース層は、回路基板構造Aの強度,弾性,可撓性等の
機械的諸性質をほぼ決定するものであり、他方、保護層
は、回路パターン2の表面の保護および絶縁を保ち、必
要に応じて該回路パターンを露出させるものであるが、
両者の機能および役割は目的に応じて配分されるもので
あってもよい。例えば、ベース層であっても回路パター
ンを露出させる開口部を有し、保護層であっても機械的
強度の一因を担う等である。本実施例では、便宜上、同
一エッチング液に対して溶解速度の遅い方のポリイミド
系樹脂層をベース層1、溶解速度の速い方の層を保護層
3とする。
The polyimide resin layers 1 and 3 sandwiching the circuit pattern 2 may be similar in shape, mechanical properties, etc., except that they have different dissolution rates in the same etching solution, but usually they are the same. In many cases, the layer having the slower dissolution rate is the base layer and the layer having the faster dissolution rate is the protective layer.
The base layer substantially determines various mechanical properties such as strength, elasticity, and flexibility of the circuit board structure A, while the protective layer keeps the surface of the circuit pattern 2 protected and insulative. According to this, the circuit pattern is exposed.
The functions and roles of both may be distributed according to the purpose. For example, even the base layer has an opening for exposing the circuit pattern, and the protective layer also contributes to the mechanical strength. In this embodiment, for convenience, the polyimide resin layer having the slower dissolution rate in the same etching solution is used as the base layer 1, and the layer having the faster dissolution rate is used as the protective layer 3.

【0010】上記ベース層1として用いるポリイミド系
樹脂は、下記一般式(I)で示される構造単位を有する
ものである。
The polyimide resin used as the base layer 1 has a structural unit represented by the following general formula (I).

【0011】[0011]

【化3】 [Chemical 3]

【0012】ただし、上記一般式(I)において、Ar
1 は炭素数6以上の2価の芳香族基である。このベース
層1として用いるポリイミド系樹脂は、テトラカルボン
酸成分とジアミン成分の略等モルを有機溶媒中で反応さ
せて得たポリイミド前駆体溶液を塗布し乾燥させて塗膜
とするか、さらにこれを加熱によって脱水閉環し硬化さ
せることによって得ることができる。上記テトラカルボ
ン酸成分としては、3,3’,4,4’−ビフェニルテ
トラカルボン酸二無水物が用いられる。また、上記Ar
1 を含むジアミン成分としては、例えば、p−フェニレ
ンジアミン、4,4’−ジアミノジフェニルエーテル、
m−フェニレンジアミン、3,4’−ジアミノジフェニ
ルエーテル、3,3’−ジアミノジフェニルエーテル、
4,4’−ジアミノビフェニル等のうち少なくとも一種
類が用いられる。上記有機溶媒としては、N−メチル−
2−ピロリドン中、N,N’−ジメチルアセトアミド、
N,N’−ジメチルホルムアミド、1,3−ジメチル−
イミダゾリジノン、ジメチルスルホキシド、ジメチルス
ルフィド、ジメチルスルホン、ピリジン、テトラメチル
ウレア、ジグライム、トリグライムなどが用いられる。
However, in the above general formula (I), Ar
1 is a divalent aromatic group having 6 or more carbon atoms. The polyimide resin used as the base layer 1 is a polyimide precursor solution obtained by reacting approximately equimolar amounts of a tetracarboxylic acid component and a diamine component in an organic solvent and then dried to form a coating film. Can be obtained by dehydration ring closure by heating and curing. As the tetracarboxylic acid component, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride is used. In addition, the above Ar
Examples of the diamine component containing 1 include p-phenylenediamine, 4,4′-diaminodiphenyl ether,
m-phenylenediamine, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether,
At least one of 4,4′-diaminobiphenyl and the like is used. As the organic solvent, N-methyl-
N-N'-dimethylacetamide in 2-pyrrolidone,
N, N'-dimethylformamide, 1,3-dimethyl-
Imidazolidinone, dimethyl sulfoxide, dimethyl sulfide, dimethyl sulfone, pyridine, tetramethylurea, diglyme, triglyme and the like are used.

【0013】保護層3として用いるポリイミド系樹脂
は、下記一般式(II)で示される構造単位を有するもの
である。
The polyimide resin used as the protective layer 3 has a structural unit represented by the following general formula (II).

【0014】[0014]

【化4】 [Chemical 4]

【0015】ただし、上記一般式(II)において、Ar
2 は炭素数12以上の2価の芳香族基であり、以下の式
で示されるものが例示される。
However, in the above general formula (II), Ar
2 is a divalent aromatic group having 12 or more carbon atoms, and examples thereof include those represented by the following formula.

【0016】[0016]

【化5】 [Chemical 5]

【0017】[0017]

【化6】 [Chemical 6]

【0018】[0018]

【化7】 [Chemical 7]

【0019】[0019]

【化8】 [Chemical 8]

【0020】[0020]

【化9】 [Chemical 9]

【0021】[0021]

【化10】 [Chemical 10]

【0022】[0022]

【化11】 [Chemical 11]

【0023】[0023]

【化12】 [Chemical 12]

【0024】[0024]

【化13】 [Chemical 13]

【0025】[0025]

【化14】 [Chemical 14]

【0026】[0026]

【化15】 [Chemical 15]

【0027】ただし、上記式中R3 〜R31は互いに独立
して、低級アルキル基、低級アルコキシ基またはハロゲ
ン基を示し、また、n3 〜n31は互いに独立して、0ま
たは1〜4の整数を示し、Xは、水素またはハロゲン基
を示す。上記において、低級アルキル基とは、メチル、
エチル、プロピル、イソプロピル、ブチル、イソブチ
ル、sec-ブチル、tert- ブチル、ペンチル、イソペンチ
ル、ネオペンチル、tert- ペンチル、ヘキシル、ヘプチ
ル、オクチルなどの炭素数1〜8個の直鎖状又は分岐状
のアルキル基をいい、低級アルコキシ基とは、メトキ
シ、エトキシ、プロポキシ、イソプロポキシ、ブトキ
シ、イソブトキシ、sec-ブトキシ、tert- ブトキシ、ペ
ンチルオキシ、ヘキシルオキシ、ヘプチルオキシ、オク
チルオキシなどの炭素数1〜8個の直鎖状又は分岐状の
アルコキシ基をいい、ハロゲン基とは、フッ素、塩素、
臭素またはヨウ素をいう。
However, in the above formula, R 3 to R 31 each independently represent a lower alkyl group, a lower alkoxy group or a halogen group, and n 3 to n 31 each independently represent 0 or 1 to 4. And an X represents hydrogen or a halogen group. In the above, the lower alkyl group is methyl,
C1-C8 straight or branched alkyl such as ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, heptyl and octyl. A lower alkoxy group is a lower alkoxy group having 1 to 8 carbon atoms such as methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, sec-butoxy, tert-butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy and the like. Is a linear or branched alkoxy group, and the halogen group is fluorine, chlorine,
Refers to bromine or iodine.

【0028】保護層3に用いるポリイミド系樹脂は、テ
トラカルボン酸成分と、上記Ar2を含むジアミン成分
とを、略等モル、有機溶媒中で反応させて得たポリイミ
ド前駆体溶液を塗布し乾燥させて塗膜とするか、さらに
これを加熱によって脱水閉環し硬化させることによって
得ることができ、硬化前あるいは硬化後において、前記
ベース層1に用いるポリイミド系樹脂よりも容易にアル
カリ溶液に溶解するものである。
The polyimide resin used for the protective layer 3 is obtained by reacting a tetracarboxylic acid component and a diamine component containing Ar 2 in an equimolar amount in an organic solvent, and applying and drying a polyimide precursor solution. It can be formed into a coating film or can be obtained by further dehydration ring closure by heating and curing, and it is more easily dissolved in an alkaline solution than the polyimide resin used for the base layer 1 before or after curing. It is a thing.

【0029】上記テトラカルボン酸成分としてはピロメ
リット酸二無水物が用いられる。また、上記Ar2 を含
む具体的なジアミン成分としては、例えば、4,4’−
ジアミノジフェニルエーテル、3,4’−ジアミノジフ
ェニルエーテル、3,3’−ジアミノジフェニルエーテ
ル、4,4’−ジアミノビフェニル、ビス[4−(3−
アミノフェノキシ)フェニル]スルホン、ビス[4−
(4−アミノフェノキシ)フェニル]スルホン、ビス
[4−(4−アミノフェノキシ)フェニル]ヘキサフル
オロプロパン、3,3’−ジアミノジフェニルスルホ
ン、3,4’−ジアミノジフェニルスルホン、4,4’
−ジアミノジフェニルスルホン、ビス[4−(3−アミ
ノフェノキシ)フェニル]エーテル、ビス[4−(4−
アミノフェノキシ)フェニル]エーテル、ビス[4−
(3−アミノフェノキシ)フェニル]プロパン、ビス
[4−(4−アミノフェノキシ)フェニル]プロパン、
3,3’−ジアミノジフェニルプロパン、3,3’−ジ
アミノジフェニルベンゾフェノン等が例示され、これら
のうち少なくとも一種類が用いられる。また、芳香族基
が炭素数6のp−フェニレンジアミン、m−フェニレン
ジアミンも、上記芳香族基が炭素数12以上のジアミン
に対して、1/2以下の配合モル比ならば用いてもよ
い。
Pyromellitic dianhydride is used as the tetracarboxylic acid component. Further, as a specific diamine component containing Ar 2 , for example, 4,4′-
Diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminobiphenyl, bis [4- (3-
Aminophenoxy) phenyl] sulfone, bis [4-
(4-Aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 3,3′-diaminodiphenylsulfone, 3,4′-diaminodiphenylsulfone, 4,4 ′
-Diaminodiphenyl sulfone, bis [4- (3-aminophenoxy) phenyl] ether, bis [4- (4-
Aminophenoxy) phenyl] ether, bis [4-
(3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] propane,
Examples of 3,3′-diaminodiphenylpropane, 3,3′-diaminodiphenylbenzophenone, and the like, at least one of which is used. Also, p-phenylenediamine and m-phenylenediamine having an aromatic group of 6 carbon atoms may be used as long as the aromatic group has a compounding molar ratio of 1/2 or less with respect to the diamine having 12 or more carbon atoms. .

【0030】有機溶媒としては、前記ベース層1におい
てポリイミド前駆体を得る場合と同様のものが用いられ
る。
As the organic solvent, the same one as in the case of obtaining the polyimide precursor in the base layer 1 is used.

【0031】回路パターン2は、良導体金属からなる配
線回路であり、材質として金,銀,銅等の他、白金,ニ
ッケル,アルミニウム,鉄,クロム,モリブデン,タン
グステン,亜鉛,スズ,又はこれらの合金などが例示さ
れる。また、例えば、銅箔からなる回路パターンに対し
て金メッキや半田メッキを施す等、上記良導体金属によ
る多層構造であってもよい。回路パターン2を形成する
方法としては、ベース層上の所定領域全面に1層〜数層
の導体層を蒸着,圧着等により積層した後にエッチング
を施し導体回路を残して形成するサブトラクティブ法
や、ベース基板上にメッキ、蒸着等によって回路パター
ンだけを形成するアディティブ法等の公知のパターン形
成方法の他、ベース層1の形成に用いる上記ポリイミド
前駆体溶液を、良導体層に塗布して硬化させる方法等が
例示される。
The circuit pattern 2 is a wiring circuit made of a good conductor metal, and is made of gold, silver, copper, etc., as well as platinum, nickel, aluminum, iron, chromium, molybdenum, tungsten, zinc, tin, or alloys thereof. Are exemplified. Further, for example, a multilayer structure made of the above-mentioned good conductor metal may be used, such as gold plating or solder plating on a circuit pattern made of copper foil. As the method of forming the circuit pattern 2, a subtractive method in which one to several conductor layers are laminated on the entire surface of a predetermined region on the base layer by vapor deposition, pressure bonding, etc., and then etching is performed to form a conductor circuit, In addition to a known pattern forming method such as an additive method of forming only a circuit pattern on a base substrate by plating, vapor deposition or the like, a method of applying the polyimide precursor solution used for forming the base layer 1 to a good conductor layer and curing the same. Etc. are illustrated.

【0032】回路パターン2に対して保護層3を積層し
被覆する方法としては、ベース層1と回路パターン2と
の積層方法と同様に、保護層3の形成に用いるポリイミ
ド前駆体溶液をベース層上に形成された回路パターンに
塗布して硬化させる方法や、保護層3を別途フィルム状
に形成して、熱等によって圧着する方法等が挙げられ
る。保護層及びベース層と、回路パターンの金属層との
密着力を高めるために、界面となる金属表面に対して、
サイディング、ニッケルメッキ、銅−亜鉛合金メッキ、
またはアルミニウムアルコラート、アルミニウムキレー
ト、シランカップリング剤などによって、化学的あるい
は機械的な表面処理を施してもよい。
As a method for laminating and covering the protective layer 3 on the circuit pattern 2, as in the laminating method for the base layer 1 and the circuit pattern 2, the polyimide precursor solution used for forming the protective layer 3 is used as the base layer. Examples thereof include a method of applying the composition on the circuit pattern formed above and curing it, a method of separately forming the protective layer 3 in the form of a film and press-bonding it with heat or the like. In order to enhance the adhesion between the protective layer and the base layer and the metal layer of the circuit pattern,
Siding, nickel plating, copper-zinc alloy plating,
Alternatively, the surface may be chemically or mechanically treated with an aluminum alcoholate, an aluminum chelate, a silane coupling agent, or the like.

【0033】本発明の回路基板構造においては、同一エ
ッチング液に対して溶解速度の速い方のポリイミド系樹
脂を用いた層が開口加工を施す対象層となるが、前述と
同様に該加工対象層を保護層3と仮定し、開口加工法を
以下に説明する。保護層3を局部的に除去する方法とし
ては、保護層表面上に除去すべき領域以外にレジスト層
を形成し、エッチング液を用いて浸漬法、スプレー法等
によるエッチングすれば、保護層の所望領域だけを容易
に除去することができる。
In the circuit board structure of the present invention, the layer using the polyimide resin, which has a higher dissolution rate in the same etching solution, is the target layer to be subjected to the opening processing. Assuming that is the protective layer 3, the opening processing method will be described below. As a method for locally removing the protective layer 3, if a resist layer is formed on the surface of the protective layer other than the area to be removed and etching is performed by an immersion liquid or a spray method using an etching solution, a desired protective layer can be obtained. Only the area can be easily removed.

【0034】レジスト層は、耐アルカリ性があれば特に
制限はなく、市販の溶剤型フォトレジストや剥離現像型
フォトレジストを用いるか、ポリエチレン、ポリプロピ
レン、ポリスチレン、ポリ塩化ビニル、アクリル樹脂、
セルロース樹脂、塩素化ポリエーテル、EVAなどの共
重合体、ABS樹脂のような、グラフト重合体をポリイ
ミド樹脂層上に塗工し、フォトリソグラフィ等によって
保護層の目的領域だけを露出するようにパターニングす
ればよい。
The resist layer is not particularly limited as long as it has alkali resistance, and a commercially available solvent type photoresist or peeling development type photoresist is used, or polyethylene, polypropylene, polystyrene, polyvinyl chloride, acrylic resin,
Graft polymer such as cellulose resin, chlorinated polyether, copolymer such as EVA, ABS resin, etc. is coated on the polyimide resin layer and patterned by photolithography to expose only the target region of the protective layer. do it.

【0035】エッチング液としては、水酸化ナトリウ
ム,水酸化カリウムなどの無機系アルカリ水溶液、また
はヒドラジン系などの有機アルカリ水溶液と、アルコー
ル系,グリコール系,アミド系溶剤の混合液が用いられ
る。また、必要に応じて2種類以上のアルカリ水溶液ま
たは溶剤を併用してもよい。
As the etching solution, a mixed solution of an inorganic alkaline aqueous solution such as sodium hydroxide and potassium hydroxide or an organic alkaline aqueous solution such as hydrazine and an alcohol-based, glycol-based or amide-based solvent is used. Moreover, you may use together 2 or more types of alkaline aqueous solutions or a solvent as needed.

【0036】ベース層1と保護層3の各々の層の厚み
は、機械的強度が十分であれば特に限定されるものでは
ないが、スルーホールや凹部を微細なピッチや形状に形
成したり、基板に可撓性が必要な場合には、5〜200
μm程度が好ましく、10〜100μm程度が特に好ま
しい。また、同一のエッチング液に対して、保護層の溶
解速度はベース層の溶解速度の10倍以上となるので、
エッチング工程によるベース層の損傷を抑制するために
は、保護層の厚みをベース層の厚みの10倍以下とする
ことが好ましく、より好ましくは保護層とベース層とが
同じ厚み以下であることがよく、特に好ましくは、保護
層の厚みをベース層の厚みの1/10以下とすることに
よって、エッチング工程によるベース層の損傷を実質的
に無くすることができる。
The thickness of each of the base layer 1 and the protective layer 3 is not particularly limited as long as the mechanical strength is sufficient, but through-holes or recesses may be formed with a fine pitch or shape, 5 to 200 if the substrate needs flexibility
The thickness is preferably about μm, particularly preferably about 10 to 100 μm. In addition, since the dissolution rate of the protective layer is 10 times or more the dissolution rate of the base layer in the same etching solution,
In order to suppress damage to the base layer due to the etching step, the thickness of the protective layer is preferably 10 times or less the thickness of the base layer, and more preferably the protective layer and the base layer have the same thickness or less. Well, particularly preferably, by setting the thickness of the protective layer to be 1/10 or less of the thickness of the base layer, damage to the base layer due to the etching step can be substantially eliminated.

【0037】〔実験例1〕本実験例では、図2に示すよ
うに、本発明の回路基板構造を具体的に製作し、さらに
その保護層3にエッチングを施して、回路パターン2の
露出したデバイスホール4を形成し、本発明の回路基板
構造を用いた一応用例を示すと共に、本発明の回路基板
構造が優れた加工性を有するものであることを確認し
た。 (1) 前駆体溶液の生成 3,3’,4,4’−ビフェニルテトラカルボン酸二無
水物とp−フェニレンジアミンの略等モルを、N−メチ
ル−2−ピロリドン中で重合してポリイミド前駆体溶液
(I)を得た。また、ピロメリット酸二無水物と4,
4’−ジアミノジフェニルエーテルの略等モルを、N,
N’−ジメチルアセトアミドで重合してポリイミド前駆
体溶液(II)を得た。 (2) ベース層と導体層との積層 上記で得たポリイミド前駆体溶液(I)を、厚み35μ
mの圧延銅箔上にコンマコーターを用いて均一に流延塗
布した後、100℃で乾燥し、さらに窒素ガス置換によ
って酸素濃度を1.5%以下にした雰囲気下で450℃
に加熱して、脱水閉環イミド転化を行い、厚み25μm
のベース層と、銅箔層とを積層した。 (3) 回路パターンの形成 上記銅箔に対して、公知のサブトラクティブ法によって
エッチング加工を施し、回路パターン2を形成した。 (4) 保護層形成 上記回路パターン2の表面にニッケルめっきを施した
後、回路パターン2とそのベース層の面全体に、上記ベ
ース層の場合と同様の方法で、ポリイミド前駆体溶液
(II)を塗布,乾燥,加熱等を施して厚み10μmの保
護層を形成し、アルカリエッチング液に対して溶解速度
のより速いポリイミド系樹脂の保護層と、溶解速度のよ
り遅いポリイミド系樹脂のベース層によって、回路パタ
ーンが挟まれてなる本発明の回路基板構造を得た。 (5) 保護層に対するデバイスホール形成(エッチング加
工) 感光性ゴム系レジストを用いて保護層表面の加工領域以
外にマスクを施し、これを、50%水酸化カリウム水溶
液50部,エタノール50部,抱水ヒドラジン5部から
なるアルカリ性エッチング液に浸漬し、50℃、10分
間のエッチング処理を行い、デバイスホール4を有する
回路基板構造を得た。
[Experimental Example 1] In this experimental example, as shown in FIG. 2, the circuit board structure of the present invention was specifically manufactured, and the protective layer 3 was further etched to expose the circuit pattern 2. While forming the device hole 4 and showing one application example using the circuit board structure of the present invention, it was confirmed that the circuit board structure of the present invention has excellent workability. (1) Preparation of precursor solution 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and p-phenylenediamine are used in N-methyl-2-pyrrolidone to polymerize approximately equimolar amounts of polyimide precursor. A body solution (I) was obtained. In addition, pyromellitic dianhydride and 4,
Approximately equimolar amount of 4'-diaminodiphenyl ether is converted into N,
Polymerization with N′-dimethylacetamide gave a polyimide precursor solution (II). (2) Lamination of Base Layer and Conductor Layer The polyimide precursor solution (I) obtained above was formed to a thickness of 35 μm.
After uniformly casting and coating on a rolled copper foil of m using a comma coater, it is dried at 100 ° C., and further 450 ° C. in an atmosphere in which the oxygen concentration is 1.5% or less by nitrogen gas replacement.
By heating, the dehydration ring-closing imide conversion is performed and the thickness is 25 μm
The base layer and the copper foil layer were laminated. (3) Formation of Circuit Pattern The copper foil was subjected to etching processing by a known subtractive method to form a circuit pattern 2. (4) Protective Layer Formation After the surface of the circuit pattern 2 is nickel-plated, the polyimide precursor solution (II) is applied to the entire surface of the circuit pattern 2 and its base layer in the same manner as in the case of the base layer. Is applied, dried, heated, etc. to form a protective layer having a thickness of 10 μm. The protective layer is composed of a polyimide resin having a faster dissolution rate in an alkali etching solution, and the base layer is made of a polyimide resin having a slower dissolution rate. A circuit board structure of the present invention in which a circuit pattern is sandwiched is obtained. (5) Device hole formation for the protective layer (etching process) A mask was applied to the surface of the protective layer other than the processed region using a photosensitive rubber-based resist, and 50% potassium hydroxide aqueous solution 50 parts, ethanol 50 parts The circuit board structure having the device holes 4 was obtained by immersing in an alkaline etching solution containing 5 parts of water hydrazine and performing an etching treatment at 50 ° C. for 10 minutes.

【0038】上記で得られた回路基板構造の品質を検査
したところ、両面がポリイミド系樹脂の層でありなが
ら、ベース層には顕著な浸食が見られず、保護層の目的
部分だけが選択的に除去されており、好ましい加工性を
有するものであることが確認できた。
When the quality of the circuit board structure obtained above was inspected, no noticeable erosion was observed in the base layer even though both sides were layers of polyimide resin, and only the target portion of the protective layer was selectively exposed. It was confirmed that it had a favorable processability.

【0039】〔実験例2〕本実験例では、図2に示すよ
うに、本発明による回路基板構造Aの保護層3の端部に
エッチングを施し、回路パターン2を露出させて接続用
の端子とし、さらに、該保護層表面に回路パターン2と
導通するバンプ5を形成し、本発明の回路基板構造の他
の応用例を示すと共に、本発明の回路基板構造が優れた
加工性を有するものであることを確認した。 (1) 前駆体溶液の生成 3,3’,4,4’−ビフェニルテトラカルボン酸二無
水物と、p−フェニレンジアミンのピロメリット酸二無
水物と、4,4’−ジアミノジフェニルエーテルとを、
10:5:5のモル比でN−メチル−2−ピロリドン中
で重合してポリイミド前駆体溶液(I)を得た。また、
ピロメリット酸二無水物とビス[4−(4−アミノフェ
ノキシ)フェニル]ヘキサフルオロプロパンの略等モル
を、N,N’−ジメチルアセトアミドで重合してポリイ
ミド前駆体溶液(II)を得た。 (2) ベース層と導体層との積層 上記ポリイミド前駆体溶液(I)を用い、実験例1と同
じ工程によって、厚み35μmの圧延銅箔と、厚み25
μmのベース層との積層品を得た。 (3) 回路パターンの形成 上記銅箔に対して、公知のサブトラクティブ法によって
エッチング加工を施し、回路パターン2を形成した。 (4) 保護層形成 上記回路パターン2の表面にニッケルめっきを施した
後、回路パターン2とそのベース層の面全体にポリイミ
ド前駆体溶液(II)をコンマコーターを用いて均一に流
延塗布した後150℃で乾燥し、さらに窒素ガス置換に
よって酸素濃度を1.5%以下にした雰囲気下で450
℃に加熱し、脱水閉環イミド転化を行って厚み10μm
の保護層を形成し、上記実験例1と同様の回路基板構造
を得た。 (5) 接続用端子の形成。 感光性ゴム系レジストを用いて保護層端部の加工領域以
外にマスクを施し、これを、50%水酸化カリウム水溶
液80部,エタノール20部,抱水ヒドラジン10部か
らなるアルカリ性エッチング液に浸漬し、60℃、5分
間のエッチング処理を行い、端部に回路パターン2が露
出し接続用の端子としてなる回路基板構造を得た。 (6) 保護層表面に対するバンプの形成 保護層表面の回路パターン2に相当する位置に、エキシ
マレーザー加工を施し微細開口部6を形成して回路パタ
ーン2を露出させ、該回路パターン2を陰極として電解
液槽内でAuめっきを行い、微細開口部6内にAuを充
填させた後、さらにAuめっきを継続し、保護層表面よ
り10μm突起したバンプを有するフレキシブル回路基
板を得た。
[Experimental Example 2] In this experimental example, as shown in FIG. 2, an end portion of the protective layer 3 of the circuit board structure A according to the present invention is etched to expose the circuit pattern 2 and connect terminals. In addition, bumps 5 that are electrically connected to the circuit pattern 2 are formed on the surface of the protective layer to show another application example of the circuit board structure of the present invention, and the circuit board structure of the present invention has excellent workability. Was confirmed. (1) Generation of precursor solution 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, pyromellitic dianhydride of p-phenylenediamine, and 4,4′-diaminodiphenyl ether,
Polymerization was performed in N-methyl-2-pyrrolidone at a molar ratio of 10: 5: 5 to obtain a polyimide precursor solution (I). Also,
The polyimide precursor solution (II) was obtained by polymerizing approximately equimolar amounts of pyromellitic dianhydride and bis [4- (4-aminophenoxy) phenyl] hexafluoropropane with N, N′-dimethylacetamide. (2) Lamination of Base Layer and Conductor Layer Using the above polyimide precursor solution (I), the rolled copper foil having a thickness of 35 μm and the thickness of 25 were prepared by the same steps as in Experimental Example 1.
A laminate with a μm base layer was obtained. (3) Formation of Circuit Pattern The copper foil was subjected to etching processing by a known subtractive method to form a circuit pattern 2. (4) Protective Layer Formation After nickel plating was applied to the surface of the circuit pattern 2, the polyimide precursor solution (II) was uniformly cast and coated on the entire surface of the circuit pattern 2 and its base layer using a comma coater. After that, it was dried at 150 ° C., and further 450 ° C. in an atmosphere in which the oxygen concentration was reduced to 1.5% or less by nitrogen gas replacement.
Heating to ℃, dehydration ring-closing imide conversion, thickness 10μm
The protective layer was formed to obtain a circuit board structure similar to that of Experimental Example 1. (5) Formation of connection terminals. A mask is applied using a photosensitive rubber-based resist except the processed region at the end of the protective layer, and the mask is dipped in an alkaline etching solution consisting of 80 parts of 50% potassium hydroxide aqueous solution, 20 parts of ethanol, and 10 parts of hydrazine hydrate. Then, etching treatment was performed at 60 ° C. for 5 minutes to obtain a circuit board structure in which the circuit pattern 2 was exposed at the end and served as a connection terminal. (6) Formation of bumps on the surface of the protective layer Excimer laser processing is performed at positions corresponding to the circuit pattern 2 on the surface of the protective layer to form fine openings 6 to expose the circuit pattern 2, and the circuit pattern 2 is used as a cathode. After performing Au plating in the electrolytic solution tank to fill the fine openings 6 with Au, Au plating was further continued to obtain a flexible circuit board having bumps protruding by 10 μm from the surface of the protective layer.

【0040】上記で得られたフレキシブル回路基板の品
質を検査したところ、実験例1と同様に、好ましい品質
であることが確認できた。
When the quality of the flexible circuit board obtained above was inspected, it was confirmed that the quality was the same as in Experimental Example 1.

【0041】本発明の回路基板構造は、上記のフレキシ
ブル回路基板の他に、多層回路基板の最外層の構造とし
ても好適に使用される。
The circuit board structure of the present invention is preferably used as the outermost layer structure of a multilayer circuit board, in addition to the above flexible circuit board.

【0042】[0042]

【発明の効果】以上詳述したように、本発明の回路基板
構造は、基板の両面がポリイミド系樹脂によって構成さ
れるものであるから、その優れた耐熱性,機械的強度,
寸法特性等を両面に有し、しかも、1回のエッチング工
程によって、片側のポリイミド系樹脂層だけを選択的
に、かつ、効率的に除去することが可能となり、開口加
工性に優れた回路基板構造として、TABフィルム、フ
レキシブルプリント基板等、種々の用途に応用可能であ
る。
As described in detail above, in the circuit board structure of the present invention, since both surfaces of the board are made of polyimide resin, excellent heat resistance, mechanical strength,
A circuit board having dimensional characteristics and the like on both sides, and moreover, it is possible to selectively and efficiently remove only one side of the polyimide-based resin layer by a single etching process, and which is excellent in opening processability. As a structure, it can be applied to various uses such as a TAB film and a flexible printed circuit board.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の回路基板構造の一実施例を模式的に示
す断面図である。
FIG. 1 is a sectional view schematically showing an embodiment of a circuit board structure of the present invention.

【図2】本発明の回路基板構造を用いた一応用例を模式
的に示す斜視図である。
FIG. 2 is a perspective view schematically showing an application example using the circuit board structure of the present invention.

【図3】本発明の回路基板構造を用いた他の応用例を模
式的に示す斜視図である。
FIG. 3 is a perspective view schematically showing another application example using the circuit board structure of the present invention.

【符号の説明】[Explanation of symbols]

A 回路基板構造 1 ベース層 2 回路パターン 3 保護層 A circuit board structure 1 base layer 2 circuit pattern 3 protective layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 エッチング液に対して溶解速度の異なる
ポリイミド系樹脂層によって、回路パターンが挟まれて
なる回路基板構造。
1. A circuit board structure in which a circuit pattern is sandwiched by polyimide resin layers having different dissolution rates with respect to an etching solution.
【請求項2】 エッチング液に対して溶解速度の異なる
ポリイミド系樹脂層が、各々下記一般式(I)、(II)
で示される構造単位を有するものである請求項1記載の
回路基板構造。 【化1】 【化2】 (上式中、Ar1 は炭素数6以上の2価の芳香族基、A
2 は炭素数12以上の2価の芳香族基を示す。)
2. A polyimide resin layer having a different dissolution rate with respect to an etching solution is represented by the following general formulas (I) and (II), respectively.
The circuit board structure according to claim 1, which has a structural unit represented by: [Chemical 1] [Chemical 2] (In the above formula, Ar 1 is a divalent aromatic group having 6 or more carbon atoms, A 1
r 2 represents a divalent aromatic group having 12 or more carbon atoms. )
【請求項3】 エッチング液に対して溶解速度の異なる
ポリイミド系樹脂層のうち、溶解速度の速い方の層の厚
みが、遅い方の層の厚みの10倍以下である請求項1記
載の回路基板構造。
3. The circuit according to claim 1, wherein among polyimide-based resin layers having different dissolution rates with respect to an etching solution, the layer having a higher dissolution rate has a thickness of 10 times or less than the thickness of a layer having a slower dissolution rate. Substrate structure.
JP18607093A 1993-07-28 1993-07-28 Circuit board structure and circuit board manufacturing method Expired - Lifetime JP3248786B2 (en)

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* Cited by examiner, † Cited by third party
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US7077588B2 (en) * 1997-07-15 2006-07-18 Silverbrook Research Pty Ltd Printer and keyboard combination
JP2007112990A (en) * 2005-09-20 2007-05-10 Nippon Steel Chem Co Ltd Ester group-containing polyimide, its precursor and method for producing those
JP2013182648A (en) * 2012-03-02 2013-09-12 Dainippon Printing Co Ltd Substrate for suspension, suspension, suspension having device, hard disk drive, and manufacturing method of substrate for suspension

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Publication number Priority date Publication date Assignee Title
CN102656630B (en) * 2009-12-24 2014-05-28 大日本印刷株式会社 Circuit board, manufacturing method of circuit board, suspension substrate, suspension, device-mounted suspension, and hard disk drive

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7077588B2 (en) * 1997-07-15 2006-07-18 Silverbrook Research Pty Ltd Printer and keyboard combination
JP2007112990A (en) * 2005-09-20 2007-05-10 Nippon Steel Chem Co Ltd Ester group-containing polyimide, its precursor and method for producing those
JP4699321B2 (en) * 2005-09-20 2011-06-08 新日鐵化学株式会社 Ester group-containing polyimide, precursor thereof, and production method thereof
JP2013182648A (en) * 2012-03-02 2013-09-12 Dainippon Printing Co Ltd Substrate for suspension, suspension, suspension having device, hard disk drive, and manufacturing method of substrate for suspension

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