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JPH0645333U - Semiconductor wafer holding boat - Google Patents

Semiconductor wafer holding boat

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Publication number
JPH0645333U
JPH0645333U JP912692U JP912692U JPH0645333U JP H0645333 U JPH0645333 U JP H0645333U JP 912692 U JP912692 U JP 912692U JP 912692 U JP912692 U JP 912692U JP H0645333 U JPH0645333 U JP H0645333U
Authority
JP
Japan
Prior art keywords
wafer
holding
groove
boat
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP912692U
Other languages
Japanese (ja)
Inventor
芳夫 竹間
一郎 津川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Fukui Shin Etsu Quartz Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Fukui Shin Etsu Quartz Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd, Fukui Shin Etsu Quartz Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP912692U priority Critical patent/JPH0645333U/en
Publication of JPH0645333U publication Critical patent/JPH0645333U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 熱処理装置内に多数枚の半導体ウエーハを整
列保持する半導体保持ボートの、ウエーハを保持する支
持棒等との接触部位を、ウエーハの安定姿勢を確保しつ
つ、その当接面積を少なくして、製品歩留り率の向上を
図った半導体ウエーハ保持ボートを提供すること。 【構成】 単数または複数点支持によって半導体ウエー
ハの周縁を保持する保持溝を形成した支持部材を有する
半導体ウエーハ保持ボートの、前記保持溝が、少なくと
もその底部をウエーハ外形に沿う曲率形状とするととも
に、該ウエーハの内側に頂点を結ぶ、ほぼ扇状形に形成
するものである。
(57) [Abstract] [Purpose] A semiconductor holding boat for aligning and holding a large number of semiconductor wafers in a heat treatment apparatus has a contact portion with a support rod or the like for holding the wafer while ensuring a stable posture of the wafer. (EN) Provided is a semiconductor wafer holding boat in which the contact area is reduced and the product yield rate is improved. A semiconductor wafer holding boat having a supporting member having a holding groove for holding a peripheral edge of a semiconductor wafer by supporting a single or plural points, wherein the holding groove has a curvature shape at least the bottom of which follows the outer shape of the wafer, The wafer is formed into a fan shape with its apex connected inside.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、多数枚の半導体ウエーハを整列保持する半導体収納治具に係わり、 特に半導体ウエーハを搭載し、保持溝を介して単数または複数点支持を行うウエ ーハの保持部位の形成膜面の不具合を少なくするウエーハ支持部材の、好適な保 持溝を提供する半導体ウエーハ保持ボートに関する。 The present invention relates to a semiconductor storage jig for aligning and holding a large number of semiconductor wafers, and in particular, for mounting a semiconductor wafer and supporting a single or plural points of holding wafers through a holding groove, a film forming surface of a holding portion of the wafer is formed. The present invention relates to a semiconductor wafer holding boat that provides a suitable holding groove for a wafer supporting member that reduces defects.

【0002】[0002]

【従来の技術】[Prior art]

従来より半導体製造工程に、半導体ウエーハ(以下、ウエーハという)をヒー タで囲まれた加熱炉内に配置して所定のガスを流し、所定の高温雰囲気下で不純 物をウエーハ内部に浸透させる、ドライブイン処理が行われる。この際、多数枚 のウエーハを整列保持させて収納する半導体処理用ボート(以下、ボートという )が使用されている。このボートは、収納する多数枚のウエーハを1ユニットと して、管材、板材およびムク棒に加工して、ウエーハを支持可能の単数または複 数点支持にて、ウエーハの周縁を保持する保持溝を有する支持棒または支持部材 (以下、支持棒等という)を製作し、それらをウエーハ収納枚数分を配設して構 成する。ボートには、特にウエーハと接触する材質には、ウエーハに対し化学的 に反応しない、耐熱性の石英ガラス、シリコンないしそれらの化合物または耐熱 性セラミック材が多用され、これら材質はウエーハの材質に比べて硬度が大きく 、ウエーハを傷つけ易い。ボートと支持棒等は、ウエーハに対し有効な膜厚形成 が可能の、加工面積を出来るだけ広くとれるように、すなわちウエーハの有効な 製品歩留りが高くなるように、ウエーハが広い露出面積を保持可能に構成される 。その薄い厚みの故に、ウエーハの周縁は、欠け、割れ、ひびなどが発生し易く 、それらが経時的に変化して破壊するまで、その不具合が進行することがあるの で、ウエーハの被保持部分におけるスリップラインの発生防止やその破損防止の ために、ボートの支持棒等の保持溝に対する改善提案(例えば、実願昭63−1 11224号出願明細書)が行われている。それら提案は、前記保持溝をV字溝 、テーパー溝、U形溝あるいは所定目的に叶うような変形溝とし、それら溝の底 部や側部にウエーハを当接させ、その姿勢を安定させ、保全可能とするものであ る。このとき保持溝の深さが浅過ぎないように、また溝幅の遊びがあり過ぎて、 隣接ウエーハにもたれ掛かかり、列設するウエーハの頂部で隣接するウエーハ同 志が接触することのないように、直立または一定方向にウエーハの姿勢保持可能 に設定されている。 Conventionally, in a semiconductor manufacturing process, a semiconductor wafer (hereinafter referred to as “wafer”) is placed in a heating furnace surrounded by a heater, a predetermined gas is caused to flow, and impurities are permeated into the wafer in a predetermined high temperature atmosphere. Drive-in processing is performed. At this time, a semiconductor processing boat (hereinafter referred to as a boat) is used which holds a large number of wafers aligned and held. In this boat, a large number of wafers to be stored are treated as one unit, processed into pipes, plates and solid rods, and a holding groove that holds the peripheral edge of the wafer with single or multiple point support that can support the wafer. A supporting rod or a supporting member (hereinafter, referred to as a supporting rod) having the above is manufactured, and these are arranged by arranging the number of wafers to be stored. For boats, especially for the materials that come into contact with the wafer, heat-resistant quartz glass, silicon or their compounds, or heat-resistant ceramic materials that do not chemically react with the wafer are often used. The hardness is high and the wafer is easily damaged. The boat and support rod can form an effective film thickness on the wafer, so that the wafer can hold a large exposed area so that the processing area can be as wide as possible, that is, the effective product yield of the wafer can be increased. Is composed of. Because of its thin thickness, chips, cracks, and cracks are likely to occur on the periphery of the wafer, and the defects may progress until they change over time and are destroyed. In order to prevent the occurrence of a slip line and prevent the damage of the slip line, an improvement proposal for a holding groove such as a support rod of a boat (for example, Japanese Patent Application No. Sho 63-1111224) has been made. In those proposals, the holding groove is a V-shaped groove, a taper groove, a U-shaped groove or a deformed groove that fulfills a predetermined purpose, and a wafer is brought into contact with the bottom and side portions of these grooves to stabilize their postures. It is possible to maintain. At this time, make sure that the depth of the holding groove is not too shallow, and that there is too much play in the groove width, so that it leans against the adjacent wafers and that the adjacent wafers do not come into contact with each other at the top of the wafers that are lined up. In addition, the wafer can be held upright or in a fixed direction.

【0003】 前記支持棒等は、その保持溝の断面形状を一般に、図4に示すようにウエーハ 1の円弧状を成す外周面1aに合致するように、その底部をウエーハ外形に沿う 曲率形状に溝底4が構成され、円形状の支持棒2に切込みして、保持溝3を形成 するので、該保持溝3の該ウエーハ1に当接する溝受け部11の、溝受け外周部 6の外周形状は、余り遊びのない状態で通常円形を成している。このとき前記ウ エーハ1が、前記保持溝3に保持される部分の、前記ウエーハ1の内方に向かう 溝受け周辺部12は、ウエーハ1の平面大きさに比べて、僅かな接触面積である が為に、最も応力を受け易い部分となる。従って該溝受け周辺部12が、最も破 損に至る弱い部分で、かつ頻発する酸化膜の成長不良、膜面剥離現象などが生じ 易い不良部分でもある。In general, the support bar and the like have a bottom portion having a curved shape along the outer shape of the wafer 1 so that the holding groove has a cross-sectional shape that conforms to the outer peripheral surface 1a of the wafer 1 having an arc shape as shown in FIG. Since the groove bottom 4 is configured and cut into the circular support rod 2 to form the holding groove 3, the outer circumference of the groove receiving outer portion 6 of the groove receiving portion 11 of the holding groove 3 that abuts the wafer 1. The shape is usually circular with little play. At this time, the groove receiving peripheral portion 12 of the portion of the wafer 1 held by the holding groove 3 toward the inside of the wafer 1 has a small contact area compared to the planar size of the wafer 1. Therefore, it is the part that is most susceptible to stress. Therefore, the groove receiving peripheral portion 12 is the weakest portion which is most liable to be damaged, and is also the defective portion where frequent defective growth of oxide film, film surface peeling phenomenon and the like occur.

【0004】[0004]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかしながら、V字溝などのものにあっては、ウエーハは、保持溝とは点接触 状に保持されるので、スリップラインが生じ易く、溝の側部に当接して、姿勢安 定を重視するものにおいては、その溝深さや、前記当接面積の大きさにより保持 されることにより、デッドスペースが大きくなり勝ちであり、結局は従来の上記 提案によっても、保持溝とその廻りの溝受け周辺部には、成膜形成ムラが生じ、 そして熱処理工程中に、ウエーハが、その保持される保持溝廻りに熱履歴の不均 一部分を広範囲に作ることになり、また微細物の存在により生成するウエーハに 付着する蒸着物付着現象から、支持棒等に固着してしまうウエーハを取り出し難 くさせ、さらにウエーハ上に加工形成した膜表面が、前記固着部分から剥離し易 くなる、という問題点を持っていた。これらの問題点は、結果的に製品歩留まり を悪くしていた。 However, in a V-shaped groove or the like, since the wafer is held in a point contact state with the holding groove, a slip line is liable to occur, and the wafer comes into contact with the side portion of the groove to emphasize posture stability. In this case, the dead space tends to become large by being held by the groove depth and the size of the abutting area. The film formation unevenness occurs in the part, and during the heat treatment process, the wafer creates a wide range of non-uniform thermal history around the holding groove to be held, and is also generated due to the presence of fine particles. Due to the phenomenon of deposition of deposits on the wafer, it becomes difficult to remove the wafer that sticks to the support rods, and the film surface formed on the wafer becomes easy to peel off from the stuck part. I had a problem point. These problems have resulted in poor product yields.

【0005】 本考案の目的は、かかる従来技術の欠点に鑑み、前記ウエーハ熱処理工程とボ ートの構造の特性を充分考慮し、保持するウエーハと支持棒等との接触部位の、 膜面形成に係わる保全を図りつつ、効果的なウエーハの安定した姿勢を確保しな がら、それらの当接面積を可能な限り少なくなるような構成を有するようにして 、結果的に製品歩留まり率の向上を図った半導体ウエーハ保持ボートを提供する ことを目的とする。In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to fully consider the characteristics of the wafer heat treatment step and the structure of the boat, and to form a film surface at a contact portion between the wafer to be held and a support rod or the like. While maintaining the stable posture of the wafer while maintaining the safety of the wafer, the contact area of these wafers is made as small as possible, resulting in the improvement of the product yield rate. It is an object of the present invention to provide a semiconductor wafer holding boat designed.

【0006】[0006]

【課題を解決するための手段】[Means for Solving the Problems]

本考案は、ウエーハ1の保持のために単数または複数点により、半導体ウエー ハ1の周縁1aを保持する保持溝3を形成する支持部材2を有する半導体ウエー ハ保持ボート10において、前記保持溝が、少なくともその底部をウエーハ外形 に沿う曲率形状とするとともに、該ウエーハの内側に頂点を結ぶ、ほぼ扇状形に 形成することを特徴とするものである。 The present invention relates to a semiconductor wafer holding boat 10 having a supporting member 2 for forming a holding groove 3 for holding a peripheral edge 1a of the semiconductor wafer 1 by a single or plural points for holding the wafer 1. At least the bottom of the wafer has a curved shape along the outer shape of the wafer, and is formed in a substantially fan-like shape in which the apexes are connected to the inside of the wafer.

【0007】[0007]

【作用】[Action]

かかる技術手段によれば、前記従来発明のように、保持溝が把持するウエーハ 側の溝受け周辺部の境界面積を弧状にするのでなく、図1に示すごとく、前記把 持深さや当接するウエーハの周縁長さを変えることなく、その結果、その保持溝 のウエーハ保持能力を変えないで、前記境界面積を直線状にすることにより、弧 状と直線状との面積差分の成膜不良発生可能部分を少なくすると共に、保持溝に おけるウエーハの接触面積を縮小することが出来て、その縮小化によりウエーハ 保持溝周縁部の熱履歴の不均一部分や、不純物等の蒸着発生部位を少なくし、ウ エーハの成膜保全に好適な作用を及ぼす。 According to such a technical means, unlike the conventional invention, the boundary area of the groove receiving peripheral portion on the side of the wafer to be held by the holding groove is not arcuate, but as shown in FIG. As a result, by making the boundary area linear without changing the wafer holding capacity of the holding groove without changing the peripheral length, it is possible to cause film formation defects due to the area difference between the arc shape and the linear shape. In addition to reducing the number of parts, it is possible to reduce the contact area of the wafer in the holding groove, and this reduction reduces the non-uniform portion of the thermal history of the peripheral portion of the wafer holding groove and the deposition site of impurities etc. It exerts a suitable action for wafer deposition maintenance.

【0008】[0008]

【実施例】【Example】

以下、図面を参照して本考案の好適な実施例を例示的に詳しく説明する。ただ しこの実施例に記載されている構成部品の寸法、材質、形状、その相対配置など は特に特定的な記載がない限りは、この考案の範囲をそれのみに限定する趣旨で はなく、単なる説明例に過ぎない。 図1と図3は、本考案の実施例1に係わる半導体ウエーハ保持ボートを説明す るもので、図1はその丸形支持棒の要部断面図、図3はその支持棒の作用を示す 要部断面図で、ここに図示しない両端部に差し渡され、位置決めされた4本の断 面円形状の支持棒2が、ウエーハ1に面する部分を断面のほぼ中央部まで切り込 まれた保持溝3が、該支持棒2の軸心方向に該ウエーハ1を列設可能に複数の切 込みにより、かつ適切に離隔して設けられ、該保持溝3の断面形状は、少なくと もその底部を前記ウエーハ1の外形に沿う曲率形状して弧状を成し、かつ前記ウ エーハ1の内側に頂点を結び、その溝底部4は、前記ウエーハ1の周縁に当接可 能となっていて、全体として前記保持溝3の断面形状が、ほぼ扇状を形成するよ うに、予め軸心に沿って前記ウエーハ1側の前記支持棒2の丸形側面が、二つの 平板状側面を形成するように、切削加工されて、ボート10の主要部分を構成す る。前記保持溝3は、溝側部5により前記ウエーハ1を保持するものである。 図2は、本考案の実施例2に係わる半導体ウエーハ保持ボートを説明するもの で、その角形支持棒のの要部断面図で、ここに図示の支持棒2は、その断面形状 が角形であり、保持溝3の断面形状は、少なくともその底部を前記ウエーハ1の 外形に沿う曲率形状にして、かつ前記ウエーハ1の内側に頂点を結び、その断面 の対角線に沿って該保持溝3の溝底部4が、円弧状になるように切削加工して形 成する。その他部分の支持棒の形成は、図1に図示の構成と同様である。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, etc. of the components described in this embodiment are not intended to limit the scope of the present invention to them, unless otherwise specified. It is only an example. 1 and 3 illustrate a semiconductor wafer holding boat according to a first embodiment of the present invention. FIG. 1 is a cross-sectional view of an essential part of a round support rod, and FIG. 3 shows the action of the support rod. In a cross-sectional view of an essential part, four cross-section circular support rods 2 which are inserted and positioned at both ends (not shown) are cut into a portion facing the wafer 1 to a substantially central portion of the cross section. The holding groove 3 is provided with a plurality of cuts so that the wafer 1 can be arranged in a row in the axial direction of the support rod 2 and is appropriately separated, and the holding groove 3 has a cross-sectional shape of at least that. The bottom has a curved shape that conforms to the outer shape of the wafer 1 to form an arc, and the apex is connected to the inside of the wafer 1. The groove bottom 4 is capable of contacting the peripheral edge of the wafer 1. , So that the cross-sectional shape of the holding groove 3 as a whole forms a substantially fan shape. Along round side surface of the support rod 2 of the wafer 1 side, so as to form two flat side surfaces, it is machined, that make up the main part of the boat 10. The holding groove 3 holds the wafer 1 by the groove side portion 5. 2 illustrates a semiconductor wafer holding boat according to a second embodiment of the present invention. FIG. 2 is a cross-sectional view of an essential part of a square support rod, and the support rod 2 shown here has a square cross-section. The cross-sectional shape of the holding groove 3 is such that at least the bottom portion thereof has a curvature shape along the outer shape of the wafer 1, and a vertex is connected to the inside of the wafer 1, and the groove bottom portion of the holding groove 3 is formed along the diagonal line of the cross section. 4 is cut to form an arc. The formation of the support rods in the other portions is the same as that shown in FIG.

【0009】 次に本考案装置の装着ないし挙動動作を、説明する。ウエーハ1は、ここに図 示しない手動移し替え具により、支持棒2の保持溝3に順次差し込まれて装着さ れる。該ウエーハ1の姿勢保持は、前記ウエーハ1の保持を行う保持溝3の溝底 部4の長さと、該保持溝3の差し込み深さの二つの要素によって決定し、その結 果、前記ウエーハ1を安定させることができる。前記二つの要素が充足され、前 記ウエーハ1と前記支持棒2との接触面積、ないしその周辺の溝受け周辺部12 の面積が少ないことが望ましく、本考案装置にあっては、溝形状が、従来の支持 棒の外形と同径の円弧に替わる、ほぼ扇形状により構成するので、前記した要件 を最も少ない面積で実現して、前記ウエーハ1の装着が完了する。なお前記ウエ ーハ1が、前記保持溝3により保持されることにより生ずる応力発生、不成膜ま たは蒸着発生可能の不具合部分は、前記保持溝3の外周部6との当接部分と、前 記ウエーハ1側の該溝受け周辺部12にある。前記した構成により、ウエーハ保 持面積を持つ本考案構造は、前記溝受け周辺部12が最も小さく、その結果前記 不具合部分が最も少ないので、その装着、脱着時のウエーハ1のスリップライン の発生の抑制、固着事故や成膜剥離事故の減少に寄与している。Next, the mounting or behavior of the device of the present invention will be described. The wafer 1 is sequentially inserted into the holding groove 3 of the support rod 2 and mounted by a manual transfer tool (not shown). The attitude holding of the wafer 1 is determined by two factors, that is, the length of the groove bottom 4 of the holding groove 3 for holding the wafer 1 and the insertion depth of the holding groove 3, and as a result, the wafer 1 is held. Can be stabilized. It is desirable that the above-mentioned two elements are satisfied and the contact area between the wafer 1 and the support bar 2 or the area of the groove receiving peripheral portion 12 in the periphery thereof is small. In the device of the present invention, the groove shape is Since the structure is substantially fan-shaped instead of the circular arc having the same diameter as that of the conventional support rod, the above requirements can be realized in the smallest area, and the mounting of the wafer 1 is completed. In addition, the defective portion in which the stress generated when the wafer 1 is held by the holding groove 3 and the non-deposition or vapor deposition can occur is the contact portion with the outer peripheral portion 6 of the holding groove 3. , In the groove receiving peripheral portion 12 on the wafer 1 side. According to the structure of the present invention having a wafer holding area by the above-mentioned configuration, the groove receiving peripheral portion 12 is the smallest, and as a result, the defective portion is the smallest, the occurrence of the slip line of the wafer 1 at the time of mounting and demounting the wafer is prevented. It contributes to the suppression and reduction of sticking accidents and film peeling accidents.

【0010】 またその挙動は、ここに図示しない手段により、流通するガス流が、ボート1 0に保持される前記ウエーハ1に当接すると、前記ウエーハ1の表面に沿ってガ スは拡散し、前記支持部材2に達して、その周囲にガス流の乱れが生じ、その乱 れ部位に不成膜ムラを有する膜面が形成される。ウエーハ1が、何らかの手段に より保持溝3によって保持される限りは、前記乱れ部位を持つことは避けられな い。この乱れ部位を少なくさせることは、熱履歴の不均一性を小さくさせ、従っ て、その不均一部分以外の成膜正規処理部分を拡大し、製品歩留まりを向上させ る。本考案構造の、前記支持棒2の溝外周部6の最短長さは、ガス流の乱れによ る挙動原因の縮小に寄与する。Further, the behavior is such that, when the flowing gas flow comes into contact with the wafer 1 held by the boat 10, the gas diffuses along the surface of the wafer 1 by means (not shown). When reaching the supporting member 2, a gas flow is disturbed around the supporting member 2, and a film surface having non-film-forming unevenness is formed at the disturbed portion. As long as the wafer 1 is held by the holding groove 3 by some means, it is inevitable to have the disordered portion. Reducing this disordered portion reduces the non-uniformity of the thermal history, thus enlarging the film-formation regular processing part other than the non-uniform part and improving the product yield. The shortest length of the groove outer peripheral portion 6 of the support rod 2 in the structure of the present invention contributes to the reduction of the cause of the behavior due to the turbulence of the gas flow.

【0011】[0011]

【考案の効果】[Effect of device]

以上記載したごとく本考案によれば、ウエーハの保持を、ボートの支持部材の 保持溝の切込み深さと溝底部長さを、適切に確保しつつ、ウエーハが接触する溝 外周部長さを最小にすることにより、すなわちボートのウエーハ保持能力の確保 を図りつつ、ウエーハの装着、脱着時の固着事故等から生じる不具合を少なくす る、その当接面積の減少を行い、合わせて熱処理中の不成膜ムラ、熱履歴の不均 一部分や、不純物等の蒸着発生部位を少なくし、ウエーハの成膜保全に好適な、 半導体ウエーハの支持部材の、好適な保持溝を提供することが出来る、等の種々 の著効を有し、本考案にして改善された半導体ウエーハ保持ボートの提供が可能 になり、その実用的価値は極めて大である。 As described above, according to the present invention, while holding the wafer, the depth of the groove in contact with the wafer is minimized while the cutting depth of the groove and the length of the groove bottom of the supporting member of the boat are properly ensured. In other words, while ensuring the wafer holding capacity of the boat, the problems caused by sticking accidents during wafer loading and unloading are reduced, the contact area is reduced, and the non-deposition during heat treatment is also performed. It is possible to provide a suitable holding groove for a semiconductor wafer support member, which is suitable for wafer film formation maintenance by reducing unevenness, uneven thermal history, and areas where impurities and other vapor deposition occur. It becomes possible to provide an improved semiconductor wafer holding boat according to the present invention, which is extremely effective, and its practical value is extremely large.

【提出日】平成5年4月30日[Submission date] April 30, 1993

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0010】 またその挙動は、ここに図示しない手段により、流通するガス流が、ボート1 0に保持される前記ウエーハ1に当接すると、前記ウエーハ1の表面に沿ってガ スは拡散し、前記支持部材2に達して、その周囲にガス流の乱れが生じ、その乱 れ部位に不成膜ムラを有する膜面が形成される。ウエーハ1が、何らかの手段に より保持溝3によって保持される限りは、前記乱れ部位を持つことは避けられな い。この乱れ部位を少なくさせることは、熱履歴の不均一性を小さくさせ、従っ て、その不均一部分以外の成膜正規処理部分を拡大し、製品歩留まりを向上させ る。本考案構造の、前記支持棒2の溝外周部6の最短長さは、ガス流の乱れによ る挙動原因の縮小に寄与する。 尚、前記ウエーハ1の保持を行う保持溝3の溝底部4の深さを浅くする場合、 図5(A)(B)に示すように、これに比例して保持溝3を形成する扇状形若し くは三角形状の頂部形状(溝受け部11)を小にする事が出来、これにより、ガ ス流の乱れが生じる溝受け周辺部12の面積を一層小さくする事が出来る。 Further, the behavior is such that, when the flowing gas flow comes into contact with the wafer 1 held by the boat 10, the gas diffuses along the surface of the wafer 1 by means (not shown). When reaching the supporting member 2, a gas flow is disturbed around the supporting member 2, and a film surface having non-film-forming unevenness is formed at the disturbed portion. As long as the wafer 1 is held by the holding groove 3 by some means, it is inevitable to have the disordered portion. Reducing this disordered portion reduces the non-uniformity of the thermal history, thus enlarging the film formation regular processing portion other than the non-uniform portion and improving the product yield. The shortest length of the groove outer peripheral portion 6 of the support rod 2 in the structure of the present invention contributes to the reduction of the cause of the behavior due to the turbulence of the gas flow. When the depth of the groove bottom portion 4 of the holding groove 3 for holding the wafer 1 is made shallow, as shown in FIGS. 5 (A) and 5 (B), a fan-shaped shape for forming the holding groove 3 in proportion to this is formed. Wakashi Ku is it is possible to a triangular top shape (groove receiving portion 11) in small, thereby, it is possible to further reduce the area of the peripheral portion 12 receiving groove disturbance of gas flow occurs.

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0011[Correction target item name] 0011

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0011】[0011]

【考案の効果】[Effect of device]

以上記載したごとく本考案によれば、ウエーハの保持を、ボートの支持部材の 保持溝の切込み深さと溝底部長さを、適切に確保しつつ、ウエーハが接触する溝 外周部長さを最小にすることにより、すなわちボートのウエーハ保持能力の確保 を図りつつ、ウエーハの装着、脱着時の固着事故等から生じる不具合を少なくす る、その当接面積の減少を行い、合わせて熱処理中の不成膜ムラ、熱履歴の不均 一部分や、不純物等の蒸着発生部位を少なくし、ウエーハの成膜保全に好適な、 半導体ウエーハの支持部材の、好適な保持溝を提供することが出来る。 保持溝を形成する扇状形若しくは三角形状の頂部形状(溝受け部)を小にする 事が出来、これにより、ガス流の乱れが生じる溝受け周辺部の面積を一層小さく する事により更に本考案の効果を増進できる。 等の種々の著効を有し、本考案にして改善された半導体ウエーハ保持ボートの 提供が可能になり、その実用的価値は極めて大である。As described above, according to the present invention, while holding the wafer, the depth of the groove in contact with the wafer is minimized while the cutting depth of the groove and the length of the groove bottom of the supporting member of the boat are properly ensured. In other words, while ensuring the wafer holding capacity of the boat, the problems caused by sticking accidents during wafer loading and unloading are reduced, the contact area is reduced, and the non-deposition during heat treatment is also performed. It is possible to provide a suitable holding groove for a semiconductor wafer support member, which is suitable for wafer film formation maintenance, by reducing unevenness, uneven portion of heat history, and deposition site of impurities and the like. The fan-shaped or triangular apex shape (groove receiving portion) forming the holding groove can be made small, thereby further reducing the area of the groove receiving peripheral portion where turbulence of gas flow occurs, and the present invention The effect of can be improved. It becomes possible to provide an improved semiconductor wafer holding boat according to the present invention, which has various remarkable effects such as the above, and its practical value is extremely large.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の実施例1に係わる半導体ウエーハ保持
ボートを説明するもので、その丸形支持棒の要部断面図
である。
FIG. 1 is a cross-sectional view of a main part of a round support rod for explaining a semiconductor wafer holding boat according to a first embodiment of the present invention.

【図2】本考案の実施例2に係わる半導体ウエーハ保持
ボートを説明するもので、その角形支持棒の、要部断面
図である。
FIG. 2 is a cross-sectional view of a main portion of a square support rod for explaining a semiconductor wafer holding boat according to a second embodiment of the present invention.

【図3】本考案実施例1の、支持棒の作用を示す、要部
断面図である。
FIG. 3 is a sectional view of an essential part showing the action of the support rod according to the first embodiment of the present invention.

【図4】従来技術の保持ボートの支持棒の、作用を示
す、要部断面図である。
FIG. 4 is a cross-sectional view of a main part showing an operation of a support rod of a conventional holding boat.

【符号の説明】[Explanation of symbols]

1 :ウエーハ 1a :ウエーハ周縁 2 :支持部材 3 :保持溝 4 :溝底部 5 :溝側部 6 :溝外周部 10 :ボート 11 :溝受け部 12 :溝受け周辺部 1: Wafer 1a: Wafer peripheral edge 2: Support member 3: Holding groove 4: Groove bottom part 5: Groove side part 6: Groove outer peripheral part 10: Boat 11: Groove receiving part 12: Groove receiving peripheral part

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成5年4月30日[Submission date] April 30, 1993

【手続補正3】[Procedure 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】図5[Name of item to be corrected] Figure 5

【補正方法】追加[Correction method] Added

【補正内容】[Correction content]

【図5】(A)及び(B)は前記実施例1及び2夫々の
保持溝形状を示す変形例である。
5A and 5B are modification examples showing the shape of the holding groove in each of the first and second embodiments.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】図5[Name of item to be corrected] Figure 5

【補正方法】追加[Correction method] Added

【補正内容】[Correction content]

【図5】 [Figure 5]

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 単数または複数点支持によって半導体ウ
エーハの周縁を保持する保持溝を形成した支持部材を有
する半導体ウエーハ保持ボートにおいて、前記保持溝
が、該ウエーハの内側に頂点を結ぶ、ほぼ扇状形もしく
は三角形状に形成することを特徴とする半導体ウエーハ
保持ボート。
1. A semiconductor wafer holding boat having a supporting member having a holding groove for holding a peripheral edge of a semiconductor wafer by supporting a single or a plurality of points, wherein the holding groove has a substantially fan-like shape with an apex connecting to the inside of the wafer. Alternatively, a semiconductor wafer holding boat characterized by being formed in a triangular shape.
JP912692U 1992-01-31 1992-01-31 Semiconductor wafer holding boat Pending JPH0645333U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP912692U JPH0645333U (en) 1992-01-31 1992-01-31 Semiconductor wafer holding boat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP912692U JPH0645333U (en) 1992-01-31 1992-01-31 Semiconductor wafer holding boat

Publications (1)

Publication Number Publication Date
JPH0645333U true JPH0645333U (en) 1994-06-14

Family

ID=11711946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP912692U Pending JPH0645333U (en) 1992-01-31 1992-01-31 Semiconductor wafer holding boat

Country Status (1)

Country Link
JP (1) JPH0645333U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013089820A (en) * 2011-10-19 2013-05-13 Shin Etsu Chem Co Ltd Thermal processing boat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013089820A (en) * 2011-10-19 2013-05-13 Shin Etsu Chem Co Ltd Thermal processing boat

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