JPH0644139U - Wafer holding jig - Google Patents
Wafer holding jigInfo
- Publication number
- JPH0644139U JPH0644139U JP912492U JP912492U JPH0644139U JP H0644139 U JPH0644139 U JP H0644139U JP 912492 U JP912492 U JP 912492U JP 912492 U JP912492 U JP 912492U JP H0644139 U JPH0644139 U JP H0644139U
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- Prior art keywords
- wafer
- groove
- holding jig
- supporting
- support
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Abstract
(57)【要約】
【目的】 熱処理装置内に多数枚の半導体ウエーハを整
列保持する保持治具内の支持溝廻りのガス流の適切な案
内を図り、ウエーハと支持溝との接触面に蒸着物の堆積
防止を可能とし、良質な支持溝を加工可能とするウエー
ハ保持治具を提供すること。
【構成】 ウエーハを保持可能に平行に延設する複数の
支持溝を刻設する支持部材を有し、その間に該ウエーハ
を載設保持可能な保持空間を形成したウエーハ保持治具
の、前記支持溝の底部に、複数の前記支持溝に連通可能
の深溝を形成して、該深溝に沿って流通するガス流を案
内可能とするものである。
(57) [Abstract] [Purpose] Properly guide the gas flow around the supporting groove in the holding jig that holds and holds a large number of semiconductor wafers in the heat treatment apparatus, and deposits on the contact surface between the wafer and the supporting groove. (EN) Provided is a wafer holding jig capable of preventing accumulation of substances and capable of processing a high-quality support groove. A wafer holding jig having a supporting member having a plurality of supporting grooves extending in parallel so that a wafer can be held in parallel, and a holding space for holding and holding the wafer therebetween is formed between the supporting members. A deep groove that can communicate with the plurality of support grooves is formed at the bottom of the groove so that the gas flow flowing along the deep groove can be guided.
Description
【0001】[0001]
本考案は、多数枚の半導体ウエーハを整列保持する半導体収納治具に係わり、 特に半導体ウエーハを搭載して、ウエーハ熱処理装置内において、その表面に接 触させるガス流を停滞なく流通させるために好適なウエーハ保持治具に関する。 The present invention relates to a semiconductor accommodating jig for aligning and holding a large number of semiconductor wafers, and is particularly suitable for mounting a semiconductor wafer and for allowing a gas flow to be brought into contact with the surface of the wafer to flow smoothly in a wafer heat treatment apparatus. Wafer holding jig.
【0002】[0002]
従来より半導体製造工程に、半導体ウエーハ(以下、ウエーハという)をヒー タで囲まれた加熱炉内に配置して所定のキャリアガスとともに原料ガスを流し、 摂氏400から1400度程度の範囲の高温雰囲気下で不純物をウエーハ内部に 浸透させる、ドライブイン処理が行われる。この際、多数枚のウエーハを整列保 持させて収納するパドル、カセットボート、該カセットボートを複数搭載するマ ザーボートまたはウエーハ支持ボートと呼称される半導体保持治具(以下、保持 治具という)が使用されている。一般に保持治具には、化学的安定性の高い石英 ガラスやシリコンまたはこれらの化合物が使用される。 この保持治具は、収納する多数枚のウエーハを1ユニットとして、各工程中で 取り扱うのに適し、管材、板材およびムク棒に加工して、ウエーハを支持可能の 単数または複数点支持にて、ウエーハの周縁を保持する支持溝を有する支持棒ま たは支持部材(以下、支持棒等という)を製作し、それらをウエーハ収納枚数分 を配設して構成し、そこにピンセット等の手動移し替え具を用いて一枚毎にウエ ーハを収納して、通常保持治具とともにウエーハへの処理加工が行われる。この 保持治具内において各ウエーハが、シランやホスゲン等のガス原料のウエーハ表 面への結晶化による均一な膜厚分布を得るために、ガス流を滞留させたり、バッ クドーピングさせることなく、供給するガスを上流から下流へ適切に案内させる ことにより、有効な膜厚形成が可能の加工面積を出来るだけ広くとることがでる ように、そしてウエーハの有効な製品歩留りが高まるように、ウエーハができる だけ広い露出面積を持つようにし、あるいはウエーハの被保持部分におけるスリ ップラインの発生防止やその破損防止のために、保持治具の支持棒等の支持溝に 対する改善提案(例えば、特開昭54ー152863号公報)が行われている。 それら提案は、前記支持溝をV字溝、Y字溝、テーパー溝、U形溝あるいは所定 目的に叶うような変形溝とし、それら溝の底部や側部にウエーハを当接させ、そ の姿勢を安定させて保全可能とするとともに、その溝部内部にガスの入れ込みも 可能な形状のものもある。 上記した支持溝は、断面半円形の支持板を用いてその内面側に設ける場合に特 にウエーハ支持溝の切削加工は、その溝形状の凹面形状とその長さのために高度 な製作技術を必要としていた。 Conventionally, in a semiconductor manufacturing process, a semiconductor wafer (hereinafter referred to as “wafer”) is placed in a heating furnace surrounded by a heater and a raw material gas is allowed to flow along with a predetermined carrier gas, and a high temperature atmosphere in the range of 400 to 1400 degrees Celsius is used. A drive-in process is performed below to infiltrate impurities into the wafer. At this time, a semiconductor holding jig (hereinafter referred to as a holding jig) called a paddle, a cassette boat, a mother boat carrying a plurality of the cassette boats or a wafer support boat, which holds and holds a large number of wafers in an aligned manner, is used. It is used. Generally, quartz glass, silicon, or their compounds having high chemical stability is used for the holding jig. This holding jig is suitable for handling a large number of wafers to be stored as one unit during each process. It is processed into tube material, plate material and solid bar, and supports single or multiple points capable of supporting the wafer. A support rod or support member (hereinafter referred to as a support rod) having a support groove for holding the peripheral edge of the wafer is manufactured, and these are arranged by arranging them for the number of wafers to be stored, and manually transferring tweezers or the like thereto. Wafers are stored one by one by using a replacement tool, and usually the wafer is processed together with the holding jig. In order to obtain a uniform film thickness distribution by crystallization of gas raw materials such as silane and phosgene on the surface of the wafer, each wafer in this holding jig is not allowed to stay in the gas flow or back-doped, By properly guiding the gas to be supplied from upstream to downstream, the processing area for forming an effective film thickness can be made as large as possible, and the effective product yield of the wafer can be improved. Proposal of improvement for supporting grooves such as supporting rods of holding jigs in order to have the exposed area as wide as possible, or to prevent the occurrence of slip lines and damage to the held parts of the wafer. No. 54-152863). In those proposals, the supporting groove is a V-shaped groove, a Y-shaped groove, a taper groove, a U-shaped groove, or a deformed groove that fulfills a predetermined purpose, and a wafer is brought into contact with the bottom and side portions of the groove, and its posture is maintained. There is also a shape that allows gas to enter inside the groove while stabilizing and maintaining the stability. The above-mentioned support groove is provided on the inner surface side using a support plate having a semi-circular cross section. Especially, the cutting process of the wafer support groove requires an advanced manufacturing technique for the concave shape of the groove shape and its length. I needed it.
【0003】[0003]
しかしながら、V字溝など溝部内部にガスの入れ込みも可能な形状のものにあ っては、ウエーハは、支持溝とは点接触状に保持されるので、その出し入れ時に その接触端部に欠けやスリップラインが生じ易く、溝の側部に当接して姿勢安定 するものにおいては、デッドスペースが大きくなり勝ちであり、結局は従来の上 記提案によっても、保持治具の支持棒等のウエーハ支持溝付近でのガス流の通過 性が悪く、また製造工程中に発生する、粒子化したガス原料やその他の微細物に より生成する蒸着物により、ガス行き止まりの溝部にウエーハが固着し易く、さ らにその固着現象が保持治具からの、支持棒等に付着してしまうウエーハを取り 出し難くさせ、またはその付着によって、ウエーハ上に加工形成した膜表面が、 その当接面やウエーハ端部から剥離し易くなり、そして酸化膜の成長不良や結晶 質の劣化などが発生し易い、という問題点を持っていた。これらの問題点は、結 果的に製品歩留まりを悪くしていた。 一方で支持溝製作上の問題点として、該支持溝を切削する石英ガラスは、その 溝長さが長く、隣接する溝間隔が短いために、ブレードソーによる切削加工中に 、切削時の発生熱や、カッタ振動などを原因として、一部の溝部が欠けるという 問題点を有していた。 However, in the case of a shape such as a V-shaped groove that allows gas to enter the inside of the groove, the wafer is held in point contact with the support groove, and therefore the wafer may be chipped at its contact end when taking it in and out. In the case where a slip line is likely to occur and the posture is stable by abutting against the side of the groove, the dead space tends to become large, and eventually, even with the above-mentioned proposal, the supporting rods of the holding jig and the like can support the wafer. The gas flowability near the groove is poor, and the wafer is apt to stick to the gas dead groove due to the vaporized material that is generated during the manufacturing process due to the particulate gas raw material and other fine particles. In addition, the sticking phenomenon makes it difficult to remove the wafer from the holding jig, which adheres to the support rods, or the adhesion causes the film surface formed on the wafer to contact the contact surface or the wafer surface. Easily detached from Doha end, and such poor growth and crystalline deterioration of the oxide film is likely to occur, it had a problem. These problems have resulted in poor product yields. On the other hand, as a problem in manufacturing the supporting groove, the quartz glass for cutting the supporting groove has a long groove length and a short groove interval between adjacent grooves, so that heat generated during cutting by the blade saw is generated. Also, there was a problem that some grooves were chipped due to cutter vibration and the like.
【0004】 本考案の目的は、かかる従来技術の欠点に鑑み、前記ウエーハ熱処理装置と保 持治具の構造の特性を充分考慮し、ガス流の適切な案内を図りつつ、効果的な姿 勢の保全を損なうことなく確保できる手段により、図らずもウエーハと支持溝と の接触面に蒸着物が仮に発生しても、そこに堆積することが少ない、結果的に製 品歩留まり率の向上を図ったウエーハ保持治具を提供することを目的とする。In view of the above-mentioned drawbacks of the prior art, the object of the present invention is to consider the characteristics of the structure of the wafer heat treatment apparatus and the holding jig, and to guide the gas flow appropriately while providing an effective posture. By means that can be ensured without compromising the maintenance of the deposits, even if deposits were accidentally generated on the contact surface between the wafer and the support grooves, they would rarely deposit there, resulting in an improvement in the product yield rate. An object is to provide a wafer holding jig designed.
【0005】[0005]
本考案は、ウエーハを保持可能に平行に延設する複数の支持溝を刻設する支持 部材または支持棒を有し、その間に該ウエーハを載設保持可能な保持空間を形成 したウエーハ保持治具において、前記支持溝の底部に、複数の前記支持溝に連通 可能の深溝を形成して、該深溝に沿って流通するガス流を案内可能とすることを 特徴とするものである。 The present invention has a wafer holding jig having a supporting member or a supporting rod having a plurality of supporting grooves extending in parallel so that the wafer can be held in parallel, between which a holding space for mounting and holding the wafer is formed. In the above, the deep groove that can communicate with the plurality of the support grooves is formed at the bottom of the support groove, and the gas flow flowing along the deep grooves can be guided.
【0006】[0006]
かかる技術手段によれば、前記従来発明のように、ウエーハ表面に沿って支持 溝に流れ込むガス流が、該支持溝の底部に衝接して滞留することもなく、抵抗な く、前記支持溝の底部に設ける深溝に案内されて流れ去るので、蒸着物が生成し て固着要素となることも少なく、従ってウエーハの支持溝よりの出し入れの際の ウエーハ表面よりの膜面剥離の問題も、前記固着要素が少なくなることにより減 少する。さらにウエーハ保持治具の製造工程において、先に行う深溝加工が良好 な加工環境を実現して前記支持溝の加工精度を高める作用を示す。 According to this technical means, unlike the conventional invention, the gas flow flowing into the support groove along the surface of the wafer does not abut against the bottom of the support groove and stay there, and the resistance of the support groove is not increased. Since it is guided by the deep groove provided at the bottom and flows away, the deposits are less likely to be generated and become a sticking element.Therefore, the problem of peeling of the film surface from the wafer surface when the wafer is taken in and out of the support groove is also fixed. It is reduced due to fewer elements. Furthermore, in the manufacturing process of the wafer holding jig, the deep groove machining performed first realizes a favorable machining environment and improves the machining precision of the support groove.
【0007】[0007]
以下、図面を参照して本考案の好適な実施例を例示的に詳しく説明する。ただ しこの実施例に記載されている構成部品の寸法、材質、形状、その相対配置など は特に特定的な記載がない限りは、この考案の範囲をそれのみに限定する趣旨で はなく、単なる説明例に過ぎない。 図1および図2は、本考案の実施例1に係わるウエーハ保持治具の支持溝を説 明するもので、図1はその支持部材の要部を示す全体斜視図、図2はその要部断 面図で、保持空間5を形成する幅方向が断面半円形状で、その軸心方向を長手と する支持部材3の上部両端に、運搬用の半円形の取っ手6が固設されて、ボート 10を構成し、該支持部材3の内面壁に軸心方向に、両端に通ずる数本の深溝9 と該軸心方向に直交して、ウエーハ1の収納枚数分の所定の間隔を持った支持溝 7が、該深溝9よりも浅く切削して設けられている。該ウエーハ1は、その当接 面1aにおいて、該支持溝7の支持溝底部7aに当接するとともに、必要に応じ て前記支持溝7の側壁8により、その姿勢が保持される。前記支持部材3の下面 両端の適所には、必要に応じここに記載しない足部が載置用に設けられる。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, etc. of the components described in this embodiment are not intended to limit the scope of the present invention to them, unless otherwise specified. It is only an example. 1 and 2 illustrate a support groove of a wafer holding jig according to a first embodiment of the present invention. FIG. 1 is an overall perspective view showing an essential part of the supporting member, and FIG. 2 is an essential part thereof. In a cross-sectional view, the width direction that forms the holding space 5 has a semicircular cross section, and semi-circular handles 6 for transportation are fixedly attached to both upper ends of the support member 3 whose longitudinal axis is the axial direction. The boat 10 is formed, and the inner wall of the support member 3 is axially aligned with a plurality of deep grooves 9 communicating with both ends thereof at a predetermined interval orthogonal to the axial direction, corresponding to the number of stored wafers 1. The support groove 7 is provided by cutting shallower than the deep groove 9. The wafer 1 comes into contact with the support groove bottom portion 7a of the support groove 7 at the contact surface 1a thereof, and the posture thereof is held by the side wall 8 of the support groove 7 as necessary. At appropriate places on both ends of the lower surface of the support member 3, a foot portion not described here is provided for placement, if necessary.
【0008】 図3および図4は、本考案の実施例2に係わるウエーハ保持治具の支持溝を説 明するもので、図3はその支持棒の要部を示す全体斜視図、図4はその要部断面 図で、両端部に保持空間5の幅員をほぼ決める、V字状の部材4bと、その頂部 を結ぶ部材4aにより、三角形状の連接部材4a、4bを形成し、左右に相対す る該連接部材の、対応する三角形状の頂部のそれぞれを結ぶ支持棒2a、2b、 2cを、ウエーハ1を縦列収納可能の収納枚数分の長さを有して、その内側に所 定間隔を設けて所要深さを持つ、所定数の支持溝7を切り込み、該支持溝7の支 持溝底部7aが該ウエーハ1の周縁に当接して保持可能とし、前記ウエーハ1の 大きさに対応可能に形成し、さらに該支持溝7を連通し、前記支持溝7の深さよ り深い溝深を有する深溝9を、前記連接部材4a、4bの両端に配設する支持溝 に通ずる長さにおよぶように形成する。前記連接部材4a、4bには載置用の足 部4cを設けて、前記支持棒2とともに保持治具10を構成する。結果的に前記 ウエーハ1は、三本の前記支持棒2によってその支持溝7を介して保持される。 ここで前記ボート10を構成する各部材は、石英ガラス材等の他にグラファイト 、良質な耐熱性セラミック材が使われて、ウエーハ1の均熱化に寄与する。3 and 4 illustrate a supporting groove of a wafer holding jig according to a second embodiment of the present invention. FIG. 3 is an overall perspective view showing a main part of the supporting rod, and FIG. In the cross-sectional view of the main part, a triangular connecting member 4a, 4b is formed by a V-shaped member 4b and a member 4a connecting the top of the V-shaped member 4b, which substantially determines the width of the holding space 5 at both ends, and the left and right sides are opposed to each other. The supporting rods 2a, 2b, 2c connecting the corresponding triangular tops of the connecting members each have a length equal to the number of the wafers 1 that can be stored in a row, and a fixed interval is provided inside the supporting rods 2a, 2b, 2c. A predetermined number of supporting grooves 7 having a required depth are cut out so that the supporting groove bottom portion 7a of the supporting groove 7 abuts against the peripheral edge of the wafer 1 and can be held, corresponding to the size of the wafer 1. Formed so as to be able to communicate with the supporting groove 7, The deep groove 9 having a deep groove depth is formed so as to extend to the length extending to the support grooves arranged at both ends of the connecting members 4a, 4b. A foot 4c for mounting is provided on the connecting members 4a, 4b to form a holding jig 10 together with the supporting rod 2. As a result, the wafer 1 is held by the three support rods 2 through the support grooves 7. Here, graphite and a high-quality heat-resistant ceramic material are used for each member constituting the boat 10 in addition to the quartz glass material and the like, which contributes to uniform heat distribution of the wafer 1.
【0009】 次に本考案装置の関与工程に係わる動作を、説明する。ここに図示しない手段 により進められるウエーハ保持治具の製造工程において、先に寸法精度の厳密で ない深溝加工を行った上で、ウエーハ保持用の支持溝の切削加工を、該深溝に交 差して製作する。その結果、該支持溝の切削面積は、先行加工した深溝分少なく なり、その上に前記支持溝の切削時に使用する切削時の冷却液の通りが良くなっ て、切削時の発生熱の速やかな除去と合わせて、変質した冷却液や冷却液中の切 削屑の滞留することもなくなるので、切削時のカッタ振動が減少し溝側面に生じ る負荷が少なくなり、溝部分の欠けの発生などの不具合の抑制に効果的に作用し て、前記支持溝の加工精度を高めることに寄与する。ここで必ずしも深溝は長く 1本の溝形成で作らなくとも、分散した数本の連通する深溝で構成してもよい。Next, the operation related to the steps involved in the device of the present invention will be described. In the manufacturing process of the wafer holding jig, which is carried out by means not shown here, after deep groove processing with dimensional accuracy not being precise is performed first, the support groove for holding the wafer is cut to intersect with the deep groove. To manufacture. As a result, the cutting area of the supporting groove is reduced by the amount of the deep groove that was previously machined, and the cooling liquid used during cutting of the supporting groove is improved and the heat generated during cutting is quickly generated. Together with the removal, the deteriorated cooling liquid and cutting debris in the cooling liquid do not stay, so the cutter vibration during cutting is reduced and the load generated on the groove side surface is reduced, resulting in chipping of the groove part, etc. It effectively acts to suppress the above problem and contributes to improving the processing accuracy of the support groove. Here, the deep groove does not necessarily have to be long and formed by forming one groove, but may be formed by a plurality of distributed deep grooves which communicate with each other.
【0010】 このようにして加工した深溝を持つ支持溝を配設して製造され、収納数分のウ エーハの所定の装着を行ったウエーハ保持治具は、ここに図示しない加熱炉内に 配置して、所定の処理ガスを流す所定の熱処理工程を受ける。この過程で、処理 ガスは、ウエーハ表面に接触しながらガス原料を膜面に蒸着し、その一部は支持 溝周辺に流れ、支持棒ないし支持溝底部に衝接して、その衝接面に蒸着または固 着原因を生じさせるが、その衝接面の前方に深溝によるガス流の案内路があるの で、該案内路に沿って前記ガスは流れ去り、その支持溝まわりに滞留ガスが生じ ないことによる酸化膜の成長介助、ひいては結晶質の劣化防止に寄与し、併せて 前記した衝接原因は弱められ、または取り除かれ、結果的にその処理ガスの残余 を工程外へ排出する。前記衝接原因の改善によって、ウエーハの前記保持治具に 固着する原因は、深溝形成によって支持溝底部に設ける、空隙の生成による固着 部位の面積減少の結果、取り除かれ、膜面剥離原因も併せて改善される。A wafer holding jig, which is manufactured by arranging a support groove having a deep groove processed in this way, and on which a predetermined number of wafers corresponding to the number of stored wafers are mounted, is arranged in a heating furnace (not shown). Then, it undergoes a predetermined heat treatment step of flowing a predetermined processing gas. In this process, the processing gas deposits the gas raw material on the film surface while contacting the wafer surface, a part of it flows around the supporting groove, and abuts on the supporting rod or the bottom of the supporting groove to deposit on the abutting surface. Or, it causes sticking, but since there is a gas flow guideway by a deep groove in front of the contact surface, the gas flows away along the guideway, and no stagnant gas is generated around the support groove. As a result, it contributes to the growth of the oxide film and thus to the prevention of the deterioration of the crystallinity, and at the same time, the above-mentioned cause of collision is weakened or removed, and as a result, the remainder of the processing gas is discharged to the outside of the process. Due to the improvement of the cause of the collision, the cause of sticking to the holding jig of the wafer was removed as a result of the reduction of the area of the fixed part due to the formation of voids, which was provided at the bottom of the support groove by forming the deep groove, and the cause of the film surface peeling was also included. Be improved.
【0011】[0011]
以上記載したごとく本考案によれば、ウエーハ支持溝を深溝形成の後に加工す るようにしたので、該支持溝の仕上がり精度を高め、そのウエーハ保持治具の製 造技術の向上を図るとともに、そのウエーハ製造に当たって保持治具としての機 能、すなわちウエーハの保持機能を損なわないで成したガス流分配の均一化、ウ エーハと保持治具との固着原因の除去、ひいては製品歩留まりの向上を果して、 良質なウエーハ保持治具を提供することが出来る、等の種々の著効を有し、本考 案にして始めてガス流に対し合理的な支持溝を形成した好適な保持治具の提供が 可能になり、その実用的価値は極めて大である。 As described above, according to the present invention, since the wafer supporting groove is processed after the deep groove is formed, the finishing accuracy of the supporting groove is increased, and the manufacturing technique of the wafer holding jig is improved. In the wafer manufacturing, the function as a holding jig, that is, uniform gas flow distribution without impairing the wafer holding function, removal of the cause of sticking between the wafer and the holding jig, and improvement of product yield are achieved. It is possible to provide a good quality wafer holding jig, and so on. It becomes possible and its practical value is extremely large.
【図1】本考案の実施例1に係わるウエーハ保持治具の
支持溝を説明する、支持部材の要部を示す、全体斜視図
である。FIG. 1 is an overall perspective view showing a main part of a support member for explaining a support groove of a wafer holding jig according to a first embodiment of the present invention.
【図2】本考案実施例1に係わるウエーハ保持治具の支
持溝を説明する、要部断面図である。FIG. 2 is a sectional view of an essential part for explaining a support groove of the wafer holding jig according to the first embodiment of the present invention.
【図3】本考案実施例2に係わるウエーハ保持治具の支
持溝を説明する、支持棒の要部を示す、全体斜視図であ
る。FIG. 3 is an overall perspective view showing a main part of a support rod for explaining a support groove of a wafer holding jig according to a second embodiment of the present invention.
【図4】本考案実施例2に係わるウエーハ保持治具の支
持溝を説明する、要部断面図である。FIG. 4 is a sectional view of an essential part for explaining a support groove of a wafer holding jig according to a second embodiment of the present invention.
1 :ウエーハ 2 :支持棒 3 :支持部材 7 :支持溝 7a :支持溝底部 9 :深溝 1: Wafer 2: Support rod 3: Support member 7: Support groove 7a: Support groove bottom 9: Deep groove
フロントページの続き (72)考案者 若泉 新三 福井県武生市萱谷町第3号1番地4 株式 会社福井信越石英内 (72)考案者 赤星 和彦 福井県武生市萱谷町第3号1番地4 株式 会社福井信越石英内 (72)考案者 宇野 浩二 福井県武生市萱谷町第3号1番地4 株式 会社福井信越石英内 (72)考案者 上田 幹雄 福井県武生市萱谷町第3号1番地4 株式 会社福井信越石英内Front page continuation (72) Shinzo Wakaizumi, No. 4, No. 3, Kayoya-cho, Takefu-shi, Fukui Prefecture Fukui Shinetsu Quartz Co., Ltd. (72) Kazuhiko Akaboshi, No. 4, No. 3, Kayoya-cho, Takefu-shi, Fukui Prefecture Company Fukui Shinetsu Quartznai (72) Inventor Koji Uno No. 4 stock No. 3 Kayaya-cho, Takefu-shi, Fukui Prefecture Fukui Shinetsu Quartzuchi Co. Ltd. (72) Inventor Mikio Ueda No. 4 No. 3 Kayutani-cho, Takefu-shi Fukui Prefecture Company Fukui Shinetsu Quartz
Claims (1)
数の支持溝を刻設する支持部材を有し、その間に該ウエ
ーハを載設保持可能な保持空間を形成したウエーハ保持
治具において、前記支持溝の底部に、複数の前記支持溝
に連通可能の深溝を形成して、該深溝に沿って流通する
ガス流を案内可能とすることを特徴とするウエーハ保持
治具。1. A wafer holding jig having a support member having a plurality of support grooves extending in parallel so that a wafer can be held in parallel and having a holding space between which the wafer can be placed and held, A wafer holding jig, characterized in that a deep groove that can communicate with a plurality of the support grooves is formed in a bottom portion of the support groove, and a gas flow flowing along the deep grooves can be guided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP912492U JPH0644139U (en) | 1992-01-31 | 1992-01-31 | Wafer holding jig |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP912492U JPH0644139U (en) | 1992-01-31 | 1992-01-31 | Wafer holding jig |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0644139U true JPH0644139U (en) | 1994-06-10 |
Family
ID=11711896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP912492U Pending JPH0644139U (en) | 1992-01-31 | 1992-01-31 | Wafer holding jig |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0644139U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970030251A (en) * | 1995-11-30 | 1997-06-26 | 김광호 | Baffles in Diffusion Furnace for Semiconductor Device Manufacturing |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62254422A (en) * | 1986-04-28 | 1987-11-06 | Fukui Shinetsu Sekiei:Kk | Wafer supporting boat |
-
1992
- 1992-01-31 JP JP912492U patent/JPH0644139U/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62254422A (en) * | 1986-04-28 | 1987-11-06 | Fukui Shinetsu Sekiei:Kk | Wafer supporting boat |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970030251A (en) * | 1995-11-30 | 1997-06-26 | 김광호 | Baffles in Diffusion Furnace for Semiconductor Device Manufacturing |
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