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JPH0474393A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

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Publication number
JPH0474393A
JPH0474393A JP2188553A JP18855390A JPH0474393A JP H0474393 A JPH0474393 A JP H0474393A JP 2188553 A JP2188553 A JP 2188553A JP 18855390 A JP18855390 A JP 18855390A JP H0474393 A JPH0474393 A JP H0474393A
Authority
JP
Japan
Prior art keywords
eprom
circuit
oscillator
boosting
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2188553A
Other languages
Japanese (ja)
Inventor
Atsuhiro Hara
篤弘 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2188553A priority Critical patent/JPH0474393A/en
Publication of JPH0474393A publication Critical patent/JPH0474393A/en
Pending legal-status Critical Current

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  • Read Only Memory (AREA)

Abstract

PURPOSE:To correctly execute the read-out of an EPROM after the oscillation is started by providing a boosting waiting circuit for controlling a clock of a timing generator for outputting a read-out signal of the EPROM until a boosting voltage of a boosting circuit is charged up. CONSTITUTION:An output signal 3 of an oscillator 2 whose oscillation can be stopped by an oscillation stop signal 1 is inputted to a boosting circuit 6 for generating a boosting voltage 5 required for an operation of an EPROM 4, and a boosting waiting circuit 10 for controlling a clock 9 for operating a timing generator 8 for outputting a read-out signal 7 of the EPROM 4. Accordingly, the read-out signal 7 outputted form the timing generator 8 is outputted at a third shot of the clock 9, that is at a seventh shot of the output signal 3 of the oscillator 2, and thereafter, every fifth shot. In such a way, the boosting voltage 5 reaches a voltage for operating correctly the EPROM 4 and from the EPROM 4, correct data is outputted to a CPU 11.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に関し、特に昇圧回路により動
作するEPROMを内蔵する半導体集積回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit incorporating an EPROM operated by a booster circuit.

〔従来の技術〕[Conventional technology]

第4図は昇圧回路により動作するEPROMを内蔵した
従来の半導体集積回路のブロック図である。発振停止信
号1により発振停止可能な発振器2と、発振器2の出力
信号3により昇圧する昇圧回路6と、昇圧回路6の昇圧
電圧5により動作するEPROM4と、発振器2の出力
信号3によりEPROM4の読み出し信号7を出力する
タイミングジェネレータ8を有し、読み出し信号7によ
りEPROM4はCPUIIにデータを出力している。
FIG. 4 is a block diagram of a conventional semiconductor integrated circuit incorporating an EPROM operated by a booster circuit. An oscillator 2 whose oscillation can be stopped by the oscillation stop signal 1, a booster circuit 6 which boosts the voltage by the output signal 3 of the oscillator 2, an EPROM 4 which operates by the boosted voltage 5 of the booster circuit 6, and a readout of the EPROM 4 by the output signal 3 of the oscillator 2. It has a timing generator 8 that outputs a signal 7, and the read signal 7 causes the EPROM 4 to output data to the CPU II.

第5図は各ブロックの動作を説明する波形図である。T
51のタイミングまで発振停止信号lが°“H”レベル
によりすべてブロックが停止、あるいはリセットがかか
り、消費電流を下げるために昇圧回路も停止している。
FIG. 5 is a waveform diagram explaining the operation of each block. T
Until timing 51, all blocks are stopped or reset due to the oscillation stop signal l being at the "H" level, and the booster circuit is also stopped in order to reduce current consumption.

T51のタイミング以降、発振停止信号1が“L″レベ
ルなり各ブロックが動作を開始する。タイミングジェネ
レータ8は、発振器2の出力信号3を受けて、はじめ3
発目に、以降4発おきにEPROM4の読み出し信号7
を出力する。昇圧回路6の昇圧電工5は発振器2の出力
信号3により、徐々に上がっていき、出力信号306発
目発目いでEPROM4が読み出し可能な電圧に上がる
After timing T51, the oscillation stop signal 1 becomes "L" level and each block starts operating. Timing generator 8 receives output signal 3 from oscillator 2 and first
At the start, read signal 7 of EPROM4 is sent every 4 times thereafter.
Output. The booster electrician 5 of the booster circuit 6 gradually increases in response to the output signal 3 of the oscillator 2, and at the 306th output signal, the voltage increases to a voltage that can be read from the EPROM 4.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の発振開始後、T52のタイミングでEP
ROM4の読み出しを行っても昇圧電圧5が不十分であ
りEPROM4が正しく動作せずCPUIIに正しいデ
ータを出力する事ができないという問題点がある。
After the conventional oscillation starts as described above, EP starts at timing T52.
Even if the ROM 4 is read, the boosted voltage 5 is insufficient, causing the problem that the EPROM 4 does not operate properly and cannot output correct data to the CPU II.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体集積回路は昇圧電圧が十分になるまでE
PROMの読み出し信号を出入するタイミングジェネレ
ータのクロックを制御する昇圧待ち回路を備えている。
The semiconductor integrated circuit of the present invention has an E
It includes a boost wait circuit that controls the clock of a timing generator that inputs and outputs PROM read signals.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例のブロック図である。FIG. 1 is a block diagram of one embodiment of the present invention.

発振停止信号lにより発振停止可能な発振器2の出力信
号3はEPROM4の動作に必要な昇圧電圧5を発生さ
せる昇圧回路6及びEPROM4の読み出し信号7を出
力するタイミングジェネレータ8を動作させるクロック
9を制御する昇圧待ち回路10の入力になっている。第
2図は第1図の昇圧待ち回路lOの一例である。第3図
は第1図の昇圧待ち回路10に第2図の回路を用いたと
きの各ブロックと各点の動作を説明するための波形図で
ある。T31までは発振停止信号が“H”レベルにより
発振器2の昇圧回路6が停止し、タイミングジェネレー
タ8はリセットがかがり昇圧待ち回路IC+の分周回路
を構成しているバイナリ・フリップ・フロップ12,1
3.’14はそれぞれリセットがかかり、かつRSラッ
チ15もリセットがかかりタイミングジェネレータ8を
動作させるクロック9は“L”レベルになっている。T
31以降、発振停止信号1が“L″レベルなり発振器2
が出力信号3を出力し、昇圧回路6が昇圧電圧5を出力
し、出力信号3の6発目にはEPROM4の読み出し動
作が正確に行われる電圧に達する。さらに発振器2の出
力信号3により昇圧待ち回路10のフリップ・フロップ
12,13.14で構成される分周回路は動作し各8力
21,22゜23を出力し、Ta2のタイミングになる
と昇圧待ち回路10のRSラッチ15がセットされタイ
ミングジェネレータ8に発振器2の出力信号3と同相の
クロック9が供給される。T32以降、タイミングジェ
ネレータ8から出力される読み比し信号7はクロック9
の3発目、すなわち発振器2の出力信号307発目K1
以降4発おきに出力される。・従ってTa2のタイミン
グでは昇圧電圧5はEPROM4を正しく動作させるだ
けの電圧に達しておりEPROM4からは正しいデータ
がCFULLに出力される。
The output signal 3 of the oscillator 2, which can stop oscillation by the oscillation stop signal l, controls the clock 9 that operates the booster circuit 6 that generates the boosted voltage 5 necessary for the operation of the EPROM 4 and the timing generator 8 that outputs the read signal 7 for the EPROM 4. It serves as an input to the boost waiting circuit 10. FIG. 2 is an example of the boost waiting circuit IO of FIG. 1. FIG. 3 is a waveform diagram for explaining the operation of each block and each point when the circuit of FIG. 2 is used in the boost waiting circuit 10 of FIG. 1. Up to T31, the booster circuit 6 of the oscillator 2 is stopped due to the oscillation stop signal being at the "H" level, and the timing generator 8 is reset and the binary flip-flops 12, 1 forming the frequency divider circuit of the booster wait circuit IC+ are activated.
3. '14 are each reset, and the RS latch 15 is also reset, so that the clock 9 that operates the timing generator 8 is at the "L" level. T
After 31, the oscillation stop signal 1 becomes "L" level and the oscillator 2
outputs an output signal 3, a booster circuit 6 outputs a boosted voltage 5, and the sixth output of the output signal 3 reaches a voltage at which the read operation of the EPROM 4 can be performed accurately. Furthermore, the frequency divider circuit composed of flip-flops 12, 13, and 14 of the boost waiting circuit 10 is activated by the output signal 3 of the oscillator 2, and outputs 8 outputs 21, 22°23, and when the timing of Ta2 comes, the boost waiting circuit 10 is activated. The RS latch 15 of the circuit 10 is set, and the timing generator 8 is supplied with a clock 9 having the same phase as the output signal 3 of the oscillator 2. After T32, the reading ratio signal 7 output from the timing generator 8 is the clock 9.
The third shot, that is, the 307th shot K1 of the output signal of oscillator 2
After that, it will be output every 4 shots. - Therefore, at the timing of Ta2, the boosted voltage 5 has reached a voltage sufficient to properly operate the EPROM 4, and the correct data is outputted from the EPROM 4 to CFULL.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は昇圧回路の昇圧電圧がチャ
ージアップするまでEPROMの読み出し信号を出力す
るタイミングジェネレータのクロックを制御する昇圧待
ち回路を備える事により発振開始後、正しくEPROM
の読み出しを行えるという効果を有する。
As explained above, the present invention provides a boost wait circuit that controls the clock of the timing generator that outputs the EPROM read signal until the boosted voltage of the booster circuit is charged up.
This has the effect of being able to read out data.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体集積回路の一実施例のブロック
図、第2図は第1図で使用している昇圧待ち回路の一例
、第3図は一実施例の波形図、第4図は従来の半導体集
積回路のブロック図、第5図はその波形図である。 1・・・・・・発振停止信号、2・・・・・・発振器、
3・・・・・・発振器出力信号、4・・・・・・EPR
OM、5・・・・・・昇圧電圧、6・・・・・・昇圧回
路、7・・・・・・読み出し信号、8・・・・・・タイ
ミングジェネレータ、9・・・・・・クロック、10・
・・・・・昇圧待ち回路、11・・・・・CPU、12
,13゜14・・・・・・バイナリ・フリップ・フロッ
プ、15・・・・・・RSラッチ、16.17,18.
20・・・・・・インバータ回路、19・・・・・・N
AND回路、21,22゜23・・・・・・出力信号。 代理人 弁理士  内 原   晋 第 ! 困 芽 圀 j2 茅 閲
FIG. 1 is a block diagram of one embodiment of the semiconductor integrated circuit of the present invention, FIG. 2 is an example of the boost waiting circuit used in FIG. 1, FIG. 3 is a waveform diagram of one embodiment, and FIG. 4 is a block diagram of a conventional semiconductor integrated circuit, and FIG. 5 is a waveform diagram thereof. 1... Oscillation stop signal, 2... Oscillator,
3...Oscillator output signal, 4...EPR
OM, 5... Boost voltage, 6... Boost circuit, 7... Read signal, 8... Timing generator, 9... Clock , 10・
...boost waiting circuit, 11 ... CPU, 12
, 13° 14... Binary flip-flop, 15... RS latch, 16.17, 18.
20...Inverter circuit, 19...N
AND circuit, 21, 22° 23...output signal. Agent patent attorney Shindai Uchihara! Koumekuni j2 Kaya review

Claims (1)

【特許請求の範囲】[Claims] 発振停止可能な発振器と、この発振器の出力により昇圧
を行なう昇圧回路と、この昇圧回路の昇圧電圧により動
作するEPROMと、前記発振器の出力により前記EP
ROMの読み出し信号を出力するタイミングジェネレー
タを有する半導体集積回路において、前記タイミングジ
ェネレータに前記昇圧回路の昇圧電圧がほぼチャージア
ップするまでにクロックの供給を制御する昇圧待ち回路
を備えることを特徴とする半導体集積回路。
An oscillator that can stop oscillation, a booster circuit that boosts the voltage using the output of the oscillator, an EPROM that operates using the boosted voltage of the booster circuit, and an EPROM that operates using the boosted voltage of the booster circuit.
A semiconductor integrated circuit having a timing generator that outputs a ROM read signal, characterized in that the timing generator is provided with a boost waiting circuit that controls clock supply until the boosted voltage of the booster circuit is almost charged up. integrated circuit.
JP2188553A 1990-07-17 1990-07-17 Semiconductor integrated circuit Pending JPH0474393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2188553A JPH0474393A (en) 1990-07-17 1990-07-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2188553A JPH0474393A (en) 1990-07-17 1990-07-17 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH0474393A true JPH0474393A (en) 1992-03-09

Family

ID=16225712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2188553A Pending JPH0474393A (en) 1990-07-17 1990-07-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0474393A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0735925A (en) * 1993-06-29 1995-02-07 Kaiser Aerospace & Electron Corp High rate chiral nematic liquid crystal polarization body
JPH08212783A (en) * 1994-11-12 1996-08-20 Samsung Electron Co Ltd Sense circuit of bit line of semiconductor memory device
US6563738B2 (en) 1992-12-03 2003-05-13 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5725022A (en) * 1980-07-22 1982-02-09 Toshiba Corp Semiconductor integrated circuit
JPS5725021A (en) * 1980-07-22 1982-02-09 Toshiba Corp Semiconductor intergated circuit
JPS57101434A (en) * 1980-12-16 1982-06-24 Toshiba Corp Oscillator
JPS63292497A (en) * 1987-05-25 1988-11-29 Nec Corp Nonvolatile semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5725022A (en) * 1980-07-22 1982-02-09 Toshiba Corp Semiconductor integrated circuit
JPS5725021A (en) * 1980-07-22 1982-02-09 Toshiba Corp Semiconductor intergated circuit
JPS57101434A (en) * 1980-12-16 1982-06-24 Toshiba Corp Oscillator
JPS63292497A (en) * 1987-05-25 1988-11-29 Nec Corp Nonvolatile semiconductor memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563738B2 (en) 1992-12-03 2003-05-13 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6611464B2 (en) * 1992-12-03 2003-08-26 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6618288B2 (en) 1992-12-03 2003-09-09 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
US6646920B2 (en) 1992-12-03 2003-11-11 Fujitsu Limited Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
JPH0735925A (en) * 1993-06-29 1995-02-07 Kaiser Aerospace & Electron Corp High rate chiral nematic liquid crystal polarization body
JPH08212783A (en) * 1994-11-12 1996-08-20 Samsung Electron Co Ltd Sense circuit of bit line of semiconductor memory device

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