JPH0454823Y2 - - Google Patents
Info
- Publication number
- JPH0454823Y2 JPH0454823Y2 JP7465786U JP7465786U JPH0454823Y2 JP H0454823 Y2 JPH0454823 Y2 JP H0454823Y2 JP 7465786 U JP7465786 U JP 7465786U JP 7465786 U JP7465786 U JP 7465786U JP H0454823 Y2 JPH0454823 Y2 JP H0454823Y2
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- processing stage
- stage plate
- processed
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Control Of Resistance Heating (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Furnace Details (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案はランプイメージフアーネスに関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a lamp image furnace.
ランプイメージフアーネスは、ランプの放射光
をミラーで反射して被処理物に照射し、加熱処理
するものであるが、他の加熱炉に比べてエネルギ
ー効率が高くて迅速に処理でき、被処理物を汚染
しないなどの利点を有するために、各種の産業用
用途に幅広く利用されている。
Lamp image furnaces reflect the emitted light from a lamp on a mirror and irradiate it onto the workpiece for heat treatment.Compared to other heating furnaces, the lamp image furnace is more energy efficient and can process quickly. Because it has the advantage of not contaminating materials, it is widely used in various industrial applications.
ところで、従来は単一の楕円形ミラーで被処理
物に集光する方式のものが多かつたが、この方式
では、被処理物の出し入れを容易にするためもあ
つて楕円形ミラーで被処理物をも完全に取り囲ん
でいるわけではないので、どうしても光が外部に
拡散してしまう。更には、ランプの発光部は完全
な点ではなくて大きさを有するために、この発光
部をミラーの第1焦点に配置しても第2焦点に配
置された被処理物に完全には集光せず、処理台も
加熱するために光の利用効率が高くないという問
題点がある。また、加熱処理中の被処理物の温度
を測定するなどして被処理物を観測することは困
難であつた。 By the way, in the past, there were many systems in which a single elliptical mirror was used to focus the light on the object to be processed, but in this method, the elliptical mirror was used to focus the light on the object to be processed, in order to facilitate the loading and unloading of the object. Since it does not completely surround objects, the light inevitably diffuses to the outside. Furthermore, since the light emitting part of the lamp is not a perfect point but has a size, even if this light emitting part is placed at the first focal point of the mirror, it cannot be completely focused on the workpiece placed at the second focal point. There is a problem in that the light usage efficiency is not high because it does not emit any light and also heats the processing table. Furthermore, it has been difficult to observe the object to be processed by, for example, measuring the temperature of the object during the heat treatment.
そこで本考案は、ランプの放射光が被処理物に
効率良く集光してエネルギーの利用効率が高く、
また、加熱処理中の被処理物の温度を測定するな
どして被処理物を観測することが可能であり、更
には被処理物の出し入れも容易なランプイメージ
フアーネスを提供することを目的とするものであ
る。
Therefore, the present invention efficiently focuses the emitted light from the lamp on the object to be treated, resulting in high energy usage efficiency.
In addition, the purpose is to provide a lamp image furnace that allows the observation of the workpiece by measuring the temperature of the workpiece during heat treatment, and also allows easy loading and unloading of the workpiece. It is something to do.
本考案のランプイメージフアーネスは、石英ガ
ラス、透明マグネシア、サフアイアなどの透明な
材質からなり、被処理物が載置される処理ステー
ジ板と、この処理ステージ板の下側に配置され、
被処理物観測孔を有する凹状の第1ミラーと、該
処理ステージ板と該第1ミラーとを一体的に支持
する可動型保持台と、処理ステージ板を上側から
取り囲む第2ミラーと、発光フイラメントもしく
は発光プラズマが該第2ミラー内に位置し、その
放射光が第2ミラーに反射されて被処理物に指向
するランプとよりなることを特徴とするものであ
る。
The lamp image furnace of the present invention is made of a transparent material such as quartz glass, transparent magnesia, or sapphire, and includes a processing stage plate on which the object to be processed is placed, and a processing stage plate placed below the processing stage plate.
A concave first mirror having a processing object observation hole, a movable holding table that integrally supports the processing stage plate and the first mirror, a second mirror surrounding the processing stage plate from above, and a light emitting filament. Alternatively, the lamp is characterized in that the luminescent plasma is located within the second mirror, and the emitted light is reflected by the second mirror and directed toward the object to be processed.
以下に図面に示す実施例に基いて本考案を具体
的に説明する。
The present invention will be specifically described below based on embodiments shown in the drawings.
基板11上には支持板12が配置され、この支
持板12にはレール13が取付けられている。第
1ミラー2の下面には冷却板9を介してスライド
シフター14が固着されており、このスライドシ
フター14がレール13に摺動可能に跨つてい
る。第1ミラー2はアルミ合金の表面に赤外線の
反射率が高い金メツキを施した球面鏡であり、そ
の中央には観測孔21が穿設されている。第1ミ
ラー2の上には受枠16が取付けられ、この受枠
16に例えば電子部品用のアルミナ製コンデンサ
ーである被処理物10が載置される透明な処理ス
テージ板1が嵌め込まれている。従つて、スライ
ドシフター14は処理ステージ板1と第1ミラー
2を一体的に保持する可動型保持台となつてい
る。この処理ステージ板1は石英ガラス、透明マ
グネシア、サフアイアなどの透明な材質からなる
が、処理温度が800℃程度以下のときは石英ガラ
ス、1500℃程度以下のときはサフアイア、200℃
程度以下のときは透明マグネシアを使用するのが
良い。そして、被処理物10が載置される部分は
第1ミラー2の球面の中心に位置している。観測
孔21の直下には、ランプ7の主な放射成分であ
る可視光は透過する赤外線反射フイルターからな
るハーフミラー3が45度の角度で配置されてお
り、透明な処理ステージ板1を透過した被処理物
10からの放射成分を直角に反射するが、その光
路にはシリコン検出素子からなる放射温度計4が
配置されている。このシリコン検出素子は波長が
0.9μmの光を中心とした赤外線を検出する特性を
有する。 A support plate 12 is arranged on the substrate 11, and a rail 13 is attached to the support plate 12. A slide shifter 14 is fixed to the lower surface of the first mirror 2 via a cooling plate 9, and this slide shifter 14 slidably straddles the rail 13. The first mirror 2 is a spherical mirror whose aluminum alloy surface is plated with gold to have a high reflectance of infrared rays, and an observation hole 21 is bored in the center thereof. A receiving frame 16 is mounted on the first mirror 2, and a transparent processing stage plate 1 on which a processing object 10, which is an alumina capacitor for electronic parts, for example, is placed is fitted into the receiving frame 16. Therefore, the slide shifter 14 serves as a movable holding stand that holds the processing stage plate 1 and the first mirror 2 integrally. This processing stage plate 1 is made of a transparent material such as quartz glass, transparent magnesia, or saphire.When the processing temperature is about 800°C or less, quartz glass is used, when the processing temperature is about 1500°C or less, saphire is used, and when the processing temperature is about 1500°C or less, it is made of sapphire.
If the damage is below that level, it is best to use transparent magnesia. The portion on which the object to be processed 10 is placed is located at the center of the spherical surface of the first mirror 2. Immediately below the observation hole 21, a half mirror 3 consisting of an infrared reflective filter is placed at an angle of 45 degrees, through which visible light, which is the main radiation component of the lamp 7, is transmitted. The radiation component from the object to be processed 10 is reflected at right angles, and a radiation thermometer 4 made of a silicon detection element is placed in the optical path. This silicon detection element has a wavelength
It has the property of detecting infrared light centered on 0.9 μm light.
基板11上に立設したスペーサ15の上面には
アルミ合金の表面に金メツキを施した球面鏡5が
固着され、この球面鏡5の上にはパイレツクスガ
ラスに同じく金メツキを施した楕円鏡6が連設さ
れているが、楕円鏡6の第1焦点と球面鏡5の中
心は一致している。この球面鏡5と楕円鏡6とが
第2ミラーを構成しており、これが処理ステージ
板1を上側から取り囲んでいる。そして、処理ス
テージ板1は楕円鏡6の第2焦点に位置してい
る。定格が100V,1000Wのハロゲン白熱電球か
らなるランプ7がホルダー17によつて保持され
て楕円鏡6内に挿通されているが、その発光部7
1である発光フイラメントは楕円鏡6の第1焦点
および球面鏡5の中心に位置している。従つて、
ランプ7の放射光は楕円鏡6で反射して第2焦点
に位置する被処理物10に集光し、球面鏡5に入
射した光はその中心に位置する発光部71に戻
り、再び楕円鏡6で反射して被処理物10に集光
する。ランプ7が前述の白熱電球の場合は1500℃
程度まで被処理物10を昇温できるが、これ以上
の温度で加熱するときは、白熱電球に代えて放電
灯を使用するのが良く、このときも発光プラズマ
は楕円鏡6の第1焦点および球面鏡5の中心に位
置させる。 A spherical mirror 5 made of aluminum alloy and plated with gold is fixed to the upper surface of the spacer 15 erected on the substrate 11, and on top of this spherical mirror 5 is an elliptical mirror 6 made of Pyrex glass plated with gold. Although they are arranged in series, the first focal point of the elliptical mirror 6 and the center of the spherical mirror 5 coincide. The spherical mirror 5 and the elliptical mirror 6 constitute a second mirror, which surrounds the processing stage plate 1 from above. The processing stage plate 1 is located at the second focal point of the elliptical mirror 6. A lamp 7 made of a halogen incandescent bulb with a rating of 100V and 1000W is held by a holder 17 and inserted into the elliptical mirror 6.
1 is located at the first focus of the elliptical mirror 6 and at the center of the spherical mirror 5. Therefore,
The emitted light from the lamp 7 is reflected by the elliptical mirror 6 and condensed onto the workpiece 10 located at the second focal point, and the light incident on the spherical mirror 5 returns to the light emitting section 71 located at the center and returns to the elliptical mirror 6. The light is reflected and focused on the object 10 to be processed. 1500℃ if lamp 7 is the above-mentioned incandescent bulb
However, when heating the object 10 to a temperature higher than this temperature, it is better to use a discharge lamp instead of an incandescent lamp. It is located at the center of the spherical mirror 5.
しかして、スライドシフター14を移動して処
理ステージ板1を球面鏡5および楕円鏡6からな
る第2ミラーから取りだし、被処理物10である
アルミナ製コンデンサーの薄板を処理ステージ板
10上に載置し、再びスライドシフター14を移
動して処理ステージ板1を第2ミラー内の所定位
置に戻す。そして、ランプ7を点灯するとその放
射光は被処理物10に指向して加熱する。このと
き、処理ステージ板1が第2ミラーで取り囲まれ
ているので、光は外部に拡散せず、全ての光が被
処理物10に集光する。そして、処理ステージ板
1が透明であるため、処理ステージ板1に指向し
た光はこれを透過して第1ミラー2で反射し、再
び被処理物10に集光するので光の利用効率は非
常に高い。また、処理ステージ板1が透明である
ために被処理物10から放射する赤外線がこれを
透過し、温度計4によつてその温度を測定して被
処理物10の状態を観測することができる。そし
て、処理が完了するとスライドシフター14を移
動して処理ステージ板1を第2ミラーから取りだ
し、被処理物10を搬出するが、スライドシフタ
ー14を移動して被処理物10を搬入搬出できる
ので、処理ステージ板1が第2ミラーで取り囲ま
れているにもかかわらず、取扱が容易である利点
を有する。 Then, the slide shifter 14 is moved to take out the processing stage plate 1 from the second mirror consisting of the spherical mirror 5 and the elliptical mirror 6, and the thin plate of the alumina capacitor, which is the object to be processed 10, is placed on the processing stage plate 10. , move the slide shifter 14 again to return the processing stage plate 1 to the predetermined position within the second mirror. When the lamp 7 is turned on, the emitted light is directed toward the object to be processed 10 and heats it. At this time, since the processing stage plate 1 is surrounded by the second mirror, the light is not diffused to the outside and all the light is focused on the object to be processed 10. Since the processing stage plate 1 is transparent, the light directed toward the processing stage plate 1 passes through it, is reflected by the first mirror 2, and is focused on the object to be processed 10 again, so the light utilization efficiency is very high. expensive. Furthermore, since the processing stage plate 1 is transparent, infrared rays emitted from the object to be processed 10 pass through it, and the temperature can be measured by the thermometer 4 to observe the state of the object to be processed 10. . Then, when the processing is completed, the slide shifter 14 is moved to take out the processing stage plate 1 from the second mirror and the workpiece 10 is carried out, but since the workpiece 10 can be carried in and carried out by moving the slide shifter 14, Although the processing stage plate 1 is surrounded by the second mirror, it has the advantage of being easy to handle.
〔考案の効果〕
以上説明したように、本考案のランプイメージ
フアーネスは、透明な処理ステージ板を上側から
第2ミラーで取り囲むようにしたので、光が外部
に拡散せず、また、下側に凹状の第1ミラーを配
置して、被処理物にあたらなかつた放射光を再度
透明な処理ステージ板を透して下方からも加熱で
きるようにしたので、ランプの放射光が被処理物
に効率良く指向され、エネルギーの利用効率が高
く、また、加熱処理中の被処理物の温度を測定す
るなどして被処理物を観測することが可能であ
り、更には被処理物の出し入れも容易なランプイ
メージフアーネスとすることができる。[Effects of the invention] As explained above, in the lamp image furnace of the invention, since the transparent processing stage plate is surrounded by the second mirror from above, the light is not diffused to the outside, and By placing a concave first mirror in the holder, the emitted light that did not hit the object to be processed can pass through the transparent processing stage plate again and be heated from below, so that the emitted light from the lamp does not reach the object to be processed. It is efficiently oriented, has high energy usage efficiency, and can be used to observe the workpiece by measuring the temperature of the workpiece during heat treatment, and it is also easy to put in and take out the workpiece. Can be used as a lamp image furnace.
図面は本考案実施例の断面図である。
1……処理ステージ板、2……第1ミラー、2
1……観測孔、3……ハーフミラー、4……温度
計、5……球面鏡、6……楕円鏡、7……ラン
プ、71……発光部、9……冷却板。
The drawing is a sectional view of an embodiment of the present invention. 1... Processing stage plate, 2... First mirror, 2
1... Observation hole, 3... Half mirror, 4... Thermometer, 5... Spherical mirror, 6... Elliptical mirror, 7... Lamp, 71... Light emitting part, 9... Cooling plate.
Claims (1)
の透明な材質からなり、被処理物が載置される処
理ステージ板と、この処理ステージ板の下側に配
置され、被処理物観測孔を有する凹状の第1ミラ
ーと、該処理ステージ板と該第1ミラーとを一体
的に支持する可動型保持台と、処理ステージ板を
上側から取り囲む第2ミラーと、発光フイラメン
トもしくは発光プラズマが該第2ミラー内に位置
し、その放射光が第2ミラーに反射されて被処理
物に指向するランプとよりなることを特徴とする
ランプイメージフアーネス。 A processing stage plate made of a transparent material such as quartz glass, transparent magnesia, or saphire, on which the object to be processed is placed, and a concave first plate arranged under the processing stage plate and having an observation hole for the object to be processed. a movable holding table that integrally supports the mirror, the processing stage plate and the first mirror, a second mirror surrounding the processing stage plate from above, and a light emitting filament or light emitting plasma located within the second mirror. A lamp image furnace comprising: a lamp whose emitted light is reflected by a second mirror and directed toward an object to be processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7465786U JPH0454823Y2 (en) | 1986-05-20 | 1986-05-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7465786U JPH0454823Y2 (en) | 1986-05-20 | 1986-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62187626U JPS62187626U (en) | 1987-11-28 |
JPH0454823Y2 true JPH0454823Y2 (en) | 1992-12-22 |
Family
ID=30920072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7465786U Expired JPH0454823Y2 (en) | 1986-05-20 | 1986-05-20 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0454823Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4738966B2 (en) * | 2005-10-07 | 2011-08-03 | 株式会社クリスタルシステム | Floating zone melting device |
-
1986
- 1986-05-20 JP JP7465786U patent/JPH0454823Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS62187626U (en) | 1987-11-28 |
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