JP7629978B2 - Light-emitting device - Google Patents

Description

The present invention relates to an object, a method, or a manufacturing method. Alternatively, the present invention relates to a process, a machine, a manufacture, or a composition of matter. In particular, the present invention relates to, for example, a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, a driving method thereof, or a manufacturing method thereof. In particular, one embodiment of the present invention relates to a display device, an electronic device, or a manufacturing method thereof. In particular, one embodiment of the present invention relates to a display device, an electronic device, or a manufacturing method thereof that utilizes an electroluminescence (hereinafter also referred to as EL) phenomenon.

In recent years, display devices are expected to be used in various applications, and diversification is required. For example, display devices for use in portable devices and the like are required to be small, thin, lightweight, etc. On the other hand, display devices are desired to have large screens (wide display areas), and there is also a demand for reducing the area of the display device other than the display area (so-called narrow frame).

In addition, light-emitting elements (also referred to as EL elements) that utilize the EL phenomenon can be easily made thin and lightweight.
This has features such as a high speed response to input signals and the ability to be driven by a low voltage DC power supply, and its application to display devices is being considered.

For example, Patent Literature 1 discloses a portable communication device having a display on the inside of a front panel and a main body that are connected in a freely foldable manner. When the front panel and the main body are unfolded, one side of each display is configured to contact each other, resulting in a portable communication device that achieves both a large display screen and a small and lightweight device itself.

JP 2000-184026 A

However, since each display has a non-display area surrounding the display area,
In the configuration of (a), a non-display area exists at and near the seam between the two displays, and the wider the non-display area, the more a viewer will perceive an image displayed using multiple displays as being separate (this is also referred to as the display having a sense of separation).

Therefore, an object of one embodiment of the present invention is to provide a display device or electronic device in which a sense of separation of display is suppressed. Another object of one embodiment of the present invention is to provide a small display device or electronic device. Another object of one embodiment of the present invention is to provide a lightweight display device or electronic device. Another object of one embodiment of the present invention is to provide a display device or electronic device with a narrow frame. Another object of one embodiment of the present invention is to provide a display device or electronic device that is not easily damaged. Another object of one embodiment of the present invention is to provide a display device or electronic device with reduced power consumption. Another object of one embodiment of the present invention is to provide a novel display device or electronic device.

Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily have to solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc.

One embodiment of the present invention has a flexible display portion. The display portion has a bent portion. The bent portion is located in a region other than the center of the display portion. The display portion may have a plurality of bent portions.
When there are a plurality of bent portions, at least one of the bent portions is located in an area other than the center of the display portion.

One embodiment of the present invention includes a flexible display portion and a light-transmitting region. The display portion has a bent portion. When the display portion is bent, part of the display portion can be viewed from the outside through the light-transmitting region. The light-transmitting region may have another function as long as it has an opening or a light-transmitting member. For example, the light-transmitting region may have a function of a touch panel, a keyboard, or the like.

Another embodiment of the present invention includes a housing, a flexible display portion, and a winding portion. The display portion is connected to the winding portion, and the winding portion has a function of winding and storing part of the display portion.

Further, one embodiment of the present invention includes a flexible display portion. The display portion has a first region and a second region.
Even when the first area is stored so as not to be visible from the outside,
The second area can be viewed from the outside, and therefore can be used as a sub-display.

In the above configuration, the method of storing the first area of the display unit so that it cannot be seen from the outside is as follows:
The first region may be wound up or folded, or may be stored inside the housing.

In each of the above configurations, the second area of the display unit may have other functions in addition to the function as a sub-display, such as a touch panel or a keyboard.

In each of the above configurations, the second region may be protected by a light-transmitting member so that the surface is not exposed.

The display portion may have flexibility, and may include, for example, an electroluminescence element. The display portion may include a transistor. The transistor may be a transistor using silicon or a transistor using an oxide semiconductor. As the oxide semiconductor, an oxide containing any one of indium, gallium, and zinc, or the like may be used.

According to one embodiment of the present invention, a display device or electronic device in which a sense of separation of display is suppressed can be provided. According to one embodiment of the present invention, a small display device or electronic device can be provided. According to one embodiment of the present invention, a lightweight display device or electronic device can be provided. According to one embodiment of the present invention, a display device or electronic device with a narrow frame can be provided. According to one embodiment of the present invention, a display device or electronic device that is less likely to be damaged can be provided. According to one embodiment of the present invention, a display device or electronic device with reduced power consumption can be provided. According to one embodiment of the present invention, a novel display device or electronic device can be provided.

Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract effects other than these from the description in the specification, drawings, claims, etc.

1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. FIG. 1 illustrates an example of a display device. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices. 1A and 1B are diagrams illustrating examples of electronic devices.

The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the repeated explanations are omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be used.

In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings, etc. may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings, etc.

(Embodiment 1)
In this embodiment, an electronic device to which one embodiment of the present invention is applied will be described with reference to FIGS.

Examples of electronic devices include television devices (also called televisions or television receivers), computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, personal digital assistants, audio playback devices, and large game machines such as pachinko machines.

In addition to the display unit described below, these electronic devices may also include operation buttons, external connection ports, speakers, microphones, etc. Furthermore, by providing a touch panel or sensor on the display unit, information can be input by touching the display unit or placing a finger over it. Furthermore, by operating the operation buttons, it is possible to turn the power on and off, and to switch the type of image displayed on the display unit, the volume, etc.

The electronic device of this embodiment has a highly flexible display portion.
The electronic device of this embodiment has excellent portability when folded, and has excellent viewability of the display due to a seamless wide display area when unfolded.

Moreover, when the electronic device of the present embodiment is not in use, by bending the display unit so that the display surface faces inward, it is possible to prevent the display surface from being scratched or stained.

In the following, a foldable electronic device having a highly flexible region and a less flexible region will be described as an example. The highly flexible region is a portion that can be folded and bent (hereinafter, also referred to as a bending portion).

In the electronic device of this embodiment, the highly flexible region can be bent either inward or outward.

In this specification, bending the display surface of the display unit so that it faces inward is referred to as “inward bending,” and bending the display surface of the display unit so that it faces outward is referred to as “outward bending.” The display surface of an electronic device or display device refers to the surface through which the user views the display unit.

1A and 2A are plan views of the electronic device when the display unit is unfolded, and FIG. 1B is a plan view of the electronic device when the display unit is folded.
2B is an example of a side view of the electronic device when the display unit shown in FIG. 2B is folded, as viewed from the direction of the arrow. Figures 2B and 2C are examples of side views of the electronic device shown in FIG. 2A when viewed from the direction of the arrow, and Figure 2D is an example of a cross-sectional view taken along dashed line A-B in FIG. 2A.

The electronic device shown in FIG. 1A has a highly flexible region E1, a less flexible region E2, and a less flexible region E3, and the highly flexible region and the less flexible region are each in a stripe shape (striped shape).
In the present embodiment, an example is shown in which the multiple highly flexible regions and the multiple less flexible regions are parallel to each other, but the regions do not have to be arranged in parallel.

In the electronic device shown in FIG. 1, the highly flexible region E1 is located in a region other than the center of the display unit. In other words, the width of the less flexible region E2 is smaller than the width of the less flexible region E3 (E3
1, the width of the low flexibility region E2 may be greater than the width of the low flexibility region E3 (E2>E3).

In the electronic device shown in Fig. 1, a portion included in the highly flexible region E1 of the display unit can function as a bending portion. When the electronic device shown in Fig. 1(A) is folded at the highly flexible region E1, as shown in Fig. 1(B), a part of the display unit located in the less flexible region E3 overlaps with the less flexible region E2, but the other part does not overlap with the less flexible region E2 and is exposed. In other words, in the folded state, a part of the display unit cannot be seen from the outside, while the other part can be seen. Therefore, even in the folded state, a part of the display unit that can be seen can be used as a sub-display. The sub-display can be provided with a function to display a clock, an incoming call such as an email or a phone call, etc.

By using a part of the display unit as a sub-display, it is not necessary to provide a separate sub-display, which can simplify the manufacturing process and reduce costs.

In addition, by using a part of the display unit as a sub-display, it is not necessary to use the entire display area to obtain some information. Therefore, the power consumption of the display unit can be reduced compared to when the entire display unit is used. In other words, by putting the display area that is folded and invisible to the user into a non-display state, the power consumption of the electronic device can be reduced.

In the case of a display device having a main display and a sub-display separately, the sub-display often has a lower resolution than the main display from the viewpoint of simplifying the manufacturing process and reducing costs. On the other hand, in one embodiment of the present invention, a part of the main display can be used as the sub-display. Therefore, when the sub-display is used, the display can be viewed with the same resolution as the main display.

Therefore, in one embodiment of the present invention, it is preferable to use a high-definition display device for the display portion. By applying one embodiment of the present invention, a part of a main display area formed by this high-definition display device can be used as a sub-display. A high-definition sub-display can be obtained without increasing the manufacturing process or cost.

The electronic device of the present embodiment has a flexible display unit. As long as the display unit is flexible, various display devices can be used. Examples of the display device include EL elements (EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors (transistors that emit light in response to current), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating light valves (GLVs), plasma displays (PDPs), display elements using MEMS (microelectromechanical systems), digital micromirror devices (DMDs), and the like.
), DMS (digital micro shutter), interference modulation (IMOD) element, shutter type MEMS display element, optical interference type MEMS display element, electrowetting element, piezoelectric ceramic display, display element using carbon nanotubes, etc. In addition to these, a display medium whose contrast, brightness, reflectance, transmittance, etc. change due to electrical or magnetic action may be included. Examples of display devices using electron emission elements include field emission displays (FED) and SED type flat panel displays (SED: Surface conduction Electron
Examples of display devices using liquid crystal elements include liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays, direct-view liquid crystal displays, and projection liquid crystal displays). Examples of display devices using electronic ink, electronically operated liquid powder, or electrophoretic elements include electronic paper. When realizing a semi-transmissive liquid crystal display or a reflective liquid crystal display, a part or all of the pixel electrodes may function as a reflective electrode. For example, a part or all of the pixel electrodes may have aluminum, silver, or the like. In that case, a memory circuit such as an SRAM may be provided under the reflective electrode. This can further reduce power consumption.

Among them, a display device using an organic EL element is preferable because it has high flexibility and impact resistance, and can be made thin and lightweight. By using a display device using an organic EL element as a display part, it can be folded with a curvature radius of 1 mm or more and 100 mm or less, for example.
The electronic device can be suitably used for electronic devices that are folded one or more times by bending inward or outward.

In the present embodiment, it is sufficient that the highly flexible region E1 in the electronic device has at least a display device having flexibility. In Fig. 1, the highly flexible region E1 has a display device 11. As shown in Fig. 2D, the display device 11 has a display region 11a and
The display device 11 may have a non-display region 11b. For example, it is preferable to use a display device using an organic EL element as the display device 11, since this can achieve thinness and lightness in addition to high flexibility and impact resistance.

The less flexible areas E2 and E3 in the electronic device have at least a flexible display device and a support member that is less flexible than the display device, stacked on top of each other.

The electronic device shown in FIG. 1 and FIGS. 2A, 2B, and 2D includes a support 15a and a support 15b.
The supports 15a and 15b have a lower flexibility than the display device 11.
5a and 15b are spaced apart from each other.

The support may be provided on at least one of the display surface side or the side opposite the display surface of the display device; however, as shown in Figures 1 and 2, if support 15a is provided on the display surface side of display device 11 and support 15b is provided on the side opposite the display surface, the display device can be sandwiched between the pair of supports, which increases the mechanical strength of the less flexible area and makes the electronic device less susceptible to damage, which is preferable.

In addition, the support 15 shown in FIG. 2C is used in place of the supports 15a and 15b.
A display device 11 may be disposed between the display device 11 and the display device 5 .

It is preferable to have a support only on either the display surface side or the opposite side of the display surface of the display device 11, since this makes it possible to reduce the thickness and weight of the electronic device. For example, the electronic device may have only the support 15b without using the support 15a.

The highly flexible region E1 and the less flexible regions E2 and E3 preferably have a display device and a protective layer that is more flexible than the support, stacked together. This allows the highly flexible region E1 of the electronic device to be flexible and have high mechanical strength, making the electronic device less susceptible to damage. Even in the highly flexible region, the electronic device can be configured to be less susceptible to deformation due to external forces, etc.

In FIG. 1, a display device 11 has a surface opposite to a display surface protected by a protective layer 13 .

The thickness of each of the display device 11, the supports 15a and 15b, and the protective layer 13 is preferably, for example, the thickest support and the thinnest display device. In addition, the flexibility of each of the display device 11, the support 15a, and the protective layer 13 is preferably, for example, the lowest flexibility of the supports 15a and 15b, and the highest flexibility of the display device 11. By adopting such a configuration, the difference in flexibility between the highly flexible region E1 and the less flexible regions E2 and E3 becomes large, and it is possible to reliably achieve a configuration in which folding can be performed in the highly flexible region. This makes it possible to suppress bending in the less flexible region E2 or E3, thereby improving the reliability of the electronic device. In addition, it is possible to suppress a decrease in the design of the electronic device when it is folded.

Providing protective layers on both the display surface side and the opposite side of the display surface of the display device 11 is preferable because the display device can be sandwiched between a pair of protective layers, thereby increasing the mechanical strength of the electronic device and making it less susceptible to damage.

For example, as shown in FIG. 2B, in the less flexible regions E2 and E3, it is preferable that a pair of protective layers 13a, 13b are located between a pair of supports 15a, 15b, and the display device 11 is located between the pair of protective layers 13a, 13b.

Alternatively, as shown in FIG. 2C, in the regions E2 and E3 with low flexibility, a pair of protective layers 13a and 13b are positioned between the support 15, and the display device 11 is
It is preferable that the ion exchange layer 10 is located between the ion exchange layer 10 and the ion exchange layer 1

It is preferable to have a protective layer only on either the display surface side or the opposite side of the display surface of the display device, since this makes it possible to make the electronic device thinner or lighter. For example, the electronic device may have only the protective layer 13b without using the protective layer 13a.

Furthermore, if the protective layer 13a on the display surface side of the display device is a light-shielding film, it is possible to prevent external light from being irradiated onto the non-display area of the display device, which is preferable because it is possible to prevent light deterioration of transistors and the like in the driving circuit included in the non-display area.

As shown in FIG. 2D, an opening of the protective layer 13a provided on the display surface side of the display device 11 overlaps with the display area 11a of the display device.
The protective layer 13b and the protective layer 13a are provided so as to overlap each other. The protective layer 13b provided on the side opposite the display surface of the display device 11 overlaps the display area 11a and the non-display area 11b. The protective layer 13b is provided so as to contact the surface of the display device 11 opposite the display surface over a wider area than the protective layer 13a, and particularly preferably contacts the entire surface of the display device 11 opposite the display surface, thereby making it possible to more reliably protect the display device and to increase the reliability of the electronic device.

The protective layer and the support can be formed using plastic, metal, alloy, rubber, etc. By using plastic or rubber, it is possible to obtain a protective layer and a support that are lightweight and not easily damaged.
For example, it is preferable to use silicone rubber for the protective layer and stainless steel or aluminum for the support.

It is also preferable to use a highly tough material for the protective layer and the support. This makes it possible to realize an electronic device that is highly impact resistant and resistant to breakage. For example, by using an organic resin or a thin metal or alloy material, it is possible to realize an electronic device that is lightweight and resistant to breakage.
For the same reason, it is preferable to use a highly tough material for the substrate constituting the display device.

The protective layer or support positioned on the display surface side may have any light-transmitting property if it does not overlap the display area of the display device. If the protective layer or support positioned on the display surface side overlaps at least a part of the display area, it is preferable to use a material that transmits the display from the display device. The protective layer or support positioned on the opposite side to the display surface of the display device may have any light-transmitting property.

When any two of the protective layer, the support, and the display device are bonded together, various adhesives can be used, for example, resins such as a curable resin that cures at room temperature, such as a two-liquid mixed resin, a photocurable resin, and a thermosetting resin can be used. A sheet-like adhesive can also be used. Each component of the electronic device can also be fixed using a screw that penetrates any two or more of the protective layer, the support, and the display device, a pin that clamps, a clip, or the like.

The electronic device of the present embodiment may have a sensor for determining whether the highly flexible region is folded or not. For example, the sensor may be configured using a switch, a MEMS pressure sensor, or a pressure sensor.

The protective layer 13 may be provided at a plurality of locations. As an example, Fig. 18A shows an example in which two protective layers 13 are provided. In this case, the display device 11 can be made visible by folding the display device 11 as shown in Fig. 18B.
By folding the display device 11 in the manner shown in (C), it is possible to hide the display device 11. This makes it possible to protect the display device 11. In this way, by changing the folding position, it is possible to realize a plurality of functions.

In addition, if the display device is completely fixed with a protective layer or support, when bending the electronic device,
The display device may be pulled and damaged. Furthermore, when the electronic device is unfolded, a force is applied to the display device in a direction in which the display device shrinks, and the display device may be damaged. In the electronic device of the present embodiment, it is preferable that the display device is not completely fixed by the protective layer or the support. As a result, when the electronic device is folded or unfolded, the display device slides, and the position of the display device relative to the protective layer or the support changes. Therefore, it is possible to suppress the display device from being damaged due to the application of force to the display device.

This embodiment can be combined with other embodiments as appropriate.

(Embodiment 2)
In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIGS.

3 is an electronic device provided with a light-transmitting region 17. The light-transmitting region is formed using a light-transmitting material.

3 has a highly flexible region E1, a less flexible region E2, a less flexible region E3, and a region E4 including a light-transmitting region 17, with the highly flexible region E1 being located at the center of the electronic device. In other words, the sum of the width of the less flexible region E2 and the width of the region E4 including the light-transmitting region 17 is approximately the same as the width of the less flexible region E3.

In the electronic device shown in Fig. 3, a portion included in the highly flexible region E1 of the display device 11 can function as a bending portion. When the electronic device shown in Fig. 3(A) is folded at the highly flexible region E1, the translucent region 17 and the display region 11a of the display unit overlap as shown in Fig. 3(B). Therefore, the user can view a part of the display region 11a of the display unit through the translucent region 17. Therefore, even when the electronic device is folded, the part of the display unit that can be viewed through the translucent region 17 can be used as a sub-display.

3B, when the electronic device is folded, the display unit is protected by a light-transmitting member, which prevents the display surface from being exposed, thereby mitigating external impacts on the display surface and preventing scratches and dirt from occurring.

The light-transmitting region 17 may have an opening or a light-transmitting member. A light-transmitting member is preferable because the surface of the display unit is protected from exposure. The light-transmitting region 17 may have other functions. For example, the light-transmitting region 17 may have a function of a touch panel, a keyboard, or the like. When the light-transmitting region 17 has a function of a touch panel, a keyboard, or the like, buttons, a keyboard, or the like can be displayed on a part of the display unit that functions as a sub-display.

The shape of the light-transmitting region 17 is not particularly limited. Although a roughly rectangular shape is shown in FIG. 3, the light-transmitting region 17 may be a circle or a polygon.
Alternatively, the second region may be formed from a material having light-transmitting properties so that the entire region having low flexibility has light-transmitting properties.

The light-transmitting region 17 can be arranged in various sizes. For example,
19A, 19B, and 19C show examples of electronic devices in which the area of the light-transmitting region 17 is smaller than that in the case of Fig. 3. Since the light-transmitting region 17 is small, for example, an operation button 31, an image sensor 32, and the like can be disposed in the region E4 including the light-transmitting region 17.

Alternatively, a configuration shown in one drawing may be combined with a configuration shown in another drawing to form an electronic device having a new configuration. For example, an example of a combination of FIG. 1 and FIG. 3 is shown in FIG.
), FIG. 20(B) and FIG. 20(C).

This embodiment can be combined with other embodiments as appropriate.

(Embodiment 3)
In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.
In this embodiment mode, an electronic device provided with a plurality of highly flexible regions will be described.

By providing multiple highly flexible regions, multiple folding is possible.
When two electronic devices have the same size display unit, an electronic device that can be folded multiple times will be more compact when folded than one that can only be folded once, resulting in an electronic device with better portability. Also, when two electronic devices have the same size when folded, a display unit that can be folded more times will have a larger display unit when unfolded, resulting in an electronic device with better visibility.

4 to 6 show an example of an electronic device having multiple highly flexible regions.
The electronic device shown in FIG.
As shown in Fig. 4(A), the electronic device can be folded in the shape of a folding screen by folding at the highly flexible region E1. At this time, as shown in Fig. 4(B), the user can see only a part of the display unit. Since the width of the less flexible region E2 of the electronic device shown in Fig. 4(A) is substantially the same (substantially uniform), the width of the less flexible region E2 can be made substantially equal to that of E2 by folding, and the width can be reduced to approximately one-fifth of the width of the unfolded state.

In addition, Fig. 5 shows an example in which three highly flexible regions E1 are provided. The electronic device shown in Fig. 5(A) can be folded into a folding screen shape as shown in Fig. 5(C) by bending the electronic device at the highly flexible region E1. As a result, in the state shown in Fig. 5(B), a part of the display unit can be viewed through the light-transmitting region 17.

The number of highly flexible regions is not particularly limited and may be two, five or more.

4 and 5 show an example of folding into a folding screen shape, but the folding method is not limited to folding into a folding screen shape. Various methods of folding may be used.

In addition, the number of times the electronic device is folded is not particularly limited. In an electronic device having multiple highly flexible regions E1, it is not necessary to fold the electronic device using all of the highly flexible regions E1. For example, the electronic device shown in FIG. 6A has seven highly flexible regions E1.
FIG. 6B shows an example in which the flexible film is folded once in an arbitrary highly flexible region E1.
FIG. 6(B) is an example in which the display device 11 is folded once so as to be hidden, and FIG. 6(C) is an example in which the display device 11 is folded four times.

By providing a plurality of highly flexible regions E1 in the electronic device, any highly flexible region E
In the electronic device according to the present invention, the electronic device can be folded in any desired shape when folded. In addition, the size of the electronic device when folded can be adjusted to any desired size. In other words, the electronic device can be folded to fit the size and shape of a bag or pocket in which it is to be stored.

By providing a plurality of highly flexible regions E1, when the electronic device is in a folded state,
The size of the display part exposed to the outside or the position where the display part is exposed can be adjusted. Therefore, it is possible to set the sub-display to the size desired by the user. Furthermore, by providing a plurality of highly flexible regions E1, it is possible to set the sub-display to the desired arrangement. For example, the arrangement of the sub-display that is easy to use differs between right-handed and left-handed people, but by providing a plurality of highly flexible regions E1, it is possible to meet the needs of right-handed people and left-handed people, such as an arrangement that is easy to use.

By providing a plurality of highly flexible regions E1, the bending location can be changed, so that damage caused by bending can be dispersed, and the reliability of the electronic device can be improved.

4 to 6 show cases in which the widths of the multiple low flexibility regions are substantially the same (substantially uniform), but the widths of the low flexibility regions may be different from one another as shown in FIG.
Although an example in which no light-transmitting region is provided is shown in FIG. 6, a light-transmitting region may be provided.

This embodiment can be combined with other embodiments as appropriate.

(Embodiment 4)
In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIG 7. In this embodiment, an electronic device having a wide highly flexible region will be described. By providing a wide highly flexible region, it is possible to bend the electronic device at a desired position in the highly flexible region.

FIG. 7 shows an electronic device in which the width of a highly flexible region E1 is set wider than the width of a less flexible region E2.

Fig. 7A is a plan view of the electronic device in an unfolded state, and Fig. 7B is a plan view of the electronic device in a folded state. Fig. 7C is a plan view of the electronic device in a folded state.
7(A) is a plan view showing a state where the number of folds is smaller than that shown in FIG. 7(B), and FIG. 7(C) is a plan view showing a state where the device is folded once.

7 has a wide highly flexible region E1, and therefore can be folded at any position in the highly flexible region E1. Therefore, the folding position and the number of times to be folded can be freely set. By being able to freely set the folding position and the number of times to be folded, the size and arrangement of the part of the display unit that is visible to the user in the folded state can be freely set. In addition, the shape and size of the folded state can also be freely set.

Furthermore, by providing a wide highly flexible region E1, the location of bending can be changed, so that damage caused to the electronic device by bending can be dispersed, thereby improving the reliability of the electronic device.

Although an example in which no light-transmitting region is provided is shown in FIG. 7, a light-transmitting region may be provided.

This embodiment can be combined with other embodiments as appropriate.

(Embodiment 5)
In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIG 8. In each of Embodiments 1 to 4, the display portion is folded, but in this embodiment, the display portion is rolled up.

The electronic device described in this embodiment has a display portion and a roll-up portion. The display portion is flexible. The roll-up portion is formed by rolling up a part of the display portion (the first region 11c).
, reel) and has storage functions.

The electronic device shown in FIG. 8 has a housing 10, a display device 11, a winding section 16, and a fixing section 19. An operation button 21 may be further provided. The display device 11 has a first area 11c and a second area 11d.
A member 20 may be provided at an end of the second region 11d, and a member 18 may be provided at the boundary between the first region 11c and the second region 11d of the display section.

FIG. 8A is a perspective view of the display unit in an unfolded state, FIG. 8B is a perspective view of a part of the display unit (first region 11c) in a rolled-up state, and FIG. 8C is a perspective view of the second region 11d of the display unit.
1 is a side view of the state in which the cable is wrapped around the outside of the housing.

When the display unit is to be stored, as shown in FIG. 8B, a part of the display unit (first region 11c) is wound up and stored by the winding unit 16. The remaining part (second region 11) is wound up and stored by the winding unit 16.
8C, the wire 11 is wound around the outside of the housing 10 and fixed by the fixing portion 19.
Even when the display unit is stored for excellent portability, a portion of the display unit located outside the housing 10 (the second area 11d) can be seen by the user. In other words, it can be used as a sub-display.

As shown in FIG. 8, the boundary between the first region 11c and the second region 11d of the display section is
A member 18 may be provided. The member 18 has a function of preventing the second region 11d from being wound up by the winding section 16. The member 18 does not have to be provided. When the member 18 is not provided, there is no boundary between the first region 11c and the second region 11d, resulting in a display section with excellent visibility and a display section in which the sense of separation of the display is suppressed.

8, the fixing portion 19 only needs to have a function of fixing the second region 11d when the second region 11d is wrapped around the outside of the housing 10, and the length of the fixing portion 19 that can be fixed may be adjusted according to the length of the second region 11d. The fixing portion 19 may also have a function of fixing the housing at an arbitrary position. For example, the fixing portion 19 may have a function of fixing the electronic device shown in the present embodiment to a pocket or the like.

It is preferable to provide the member 20 at the end of the display unit (the end of the second region 11d).
By having this, fixing by the fixing portion 19 can be facilitated.

As shown in this embodiment mode, by providing the winding portion, damage to the display portion due to bending can be suppressed. In addition, since the display portion can be prevented from being bent at an acute angle, the reliability of the display portion can be improved.

This embodiment can be combined with other embodiments as appropriate.

(Embodiment 6)
In this embodiment, an example of a display panel that can be used as a display portion of a display device of one embodiment of the present invention is described. In this embodiment, a flexible light-emitting device using an organic EL element is described as an example of a display panel, but one embodiment of the present invention is not limited thereto.

<Configuration Example 1-1>
FIG. 9A shows a plan view of a light emitting device, and FIG. 9B shows a cross-sectional view of the light emitting device along the dashed line X1-Y1 in FIG.
9B is a top-emission type light-emitting device using a separate coloring method.

The light-emitting device shown in FIG. 9A includes a light-emitting portion 491, a driver circuit portion 493, and an FPC (Flexible Printed Circuit).
The organic EL elements and transistors included in the light-emitting portion 491 and the driving circuit portion 493 are supported on a flexible substrate 420, a flexible substrate 428,
and sealed by adhesive layer 407 .

The light-emitting device shown in FIG. 9B includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor 455, an insulating layer 463, an insulating layer 465, an insulating layer 405, an organic EL element 450 (a lower electrode 401, an EL layer 402, and an upper electrode 403), an adhesive layer 407, a flexible substrate 428,
and a conductive layer 457. The flexible substrate 428, the adhesive layer 407, and the upper electrode 403 transmit visible light.

In a light-emitting portion 491 of the light-emitting device shown in FIG. 9B, a transistor 455 and an organic EL element 450 are provided on a flexible substrate 420 via an adhesive layer 422 and an insulating layer 424. The organic EL element 450 includes a lower electrode 401 on an insulating layer 465 and an EL layer 450 on the lower electrode 401.
402 and an upper electrode 403 on the EL layer 402. The lower electrode 401 is electrically connected to a source electrode or a drain electrode of the transistor 455. The lower electrode 401 preferably reflects visible light. An end of the lower electrode 401 is covered with an insulating layer 405.

The driver circuit portion 493 includes a plurality of transistors. In FIG. 9B, one of the transistors included in the driver circuit portion 493 is illustrated.

The conductive layer 457 is electrically connected to an external input terminal that transmits a signal (a video signal, a clock signal, a start signal, a reset signal, or the like) or a potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC 495 is provided as the external input terminal.

In order to prevent an increase in the number of steps, the conductive layer 457 is preferably manufactured using the same material and in the same process as electrodes and wirings used in a light-emitting portion and a driver circuit portion. Here, an example is shown in which the conductive layer 457 is manufactured using the same material and in the same process as source and drain electrodes of a transistor.

The insulating layer 463 has an effect of suppressing diffusion of impurities into a semiconductor that constitutes a transistor. For the insulating layer 465, an insulating film having a planarization function is preferably selected in order to reduce surface unevenness caused by the transistor.

<Configuration Example 1-2>
FIG. 9A shows a plan view of the light emitting device, and FIG. 9C shows a cross-sectional view of the light emitting device along the dashed line X1-Y1 in FIG.
9C is a bottom emission type light emitting device using a color filter system.

9C includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor 454, a transistor 455, an insulating layer 463, a colored layer 432, an insulating layer 465, a conductive layer 435, an insulating layer 467, an insulating layer 405, an organic EL element 450 (a lower electrode 401, an EL layer 402, and an upper electrode 403), an adhesive layer 407, a flexible substrate 428, and a conductive layer 457.
, the insulating layer 467, and the lower electrode 401 transmit visible light.

In a light-emitting portion 491 of the light-emitting device shown in FIG. 9C, a switching transistor 454, a current control transistor 455, and an organic EL element 450 are provided on a flexible substrate 420 with an adhesive layer 422 and an insulating layer 424 interposed therebetween.
The transistor 455 includes a lower electrode 401 on the semiconductor device 457, an EL layer 402 on the lower electrode 401, and an upper electrode 403 on the EL layer 402. The lower electrode 401 is electrically connected to a source electrode or a drain electrode of the transistor 455 through a conductive layer 435.
The upper electrode 403 is preferably a layer that reflects visible light. The light-emitting device further includes a colored layer 432 that is on the insulating layer 463 and overlaps with the organic EL element 450.

The driver circuit portion 493 includes a plurality of transistors. In FIG. 9C, two of the transistors included in the driver circuit portion 493 are illustrated.

The conductive layer 457 is electrically connected to an external input terminal which transmits a signal or a potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC 495 is provided as the external input terminal.
Here, an example is shown in which the conductive layer 457 is manufactured using the same material and in the same process as the conductive layer 435.

The insulating layer 463 has an effect of suppressing diffusion of impurities into a semiconductor that constitutes a transistor. For the insulating layers 465 and 467, it is preferable to select an insulating film having a planarization function in order to reduce surface unevenness caused by transistors and wirings.

<Configuration Example 1-3>
FIG. 9A shows a plan view of the light emitting device, and FIG. 10A shows a dashed line X1-Y in FIG.
10A is a top-emission type light-emitting device using a color filter system.

The light-emitting device shown in FIG. 10A includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor 455, an insulating layer 463, an insulating layer 465, an insulating layer 405, an insulating layer 496, and an organic EL
The device 450 includes a lower electrode 401, an EL layer 402, and an upper electrode 403, an adhesive layer 407, a light-shielding layer 431, a colored layer 432, an overcoat 453, an insulating layer 226, an adhesive layer 426, a flexible substrate 428, and a conductive layer 457.
26, the adhesive layer 407, and the top electrode 403 are transparent to visible light.

In a light-emitting portion 491 of the light-emitting device shown in FIG. 10A, a transistor 455 and an organic EL element 450 are provided over a flexible substrate 420 with an adhesive layer 422 and an insulating layer 424 interposed therebetween.
The organic EL element 450 has a lower electrode 401 on an insulating layer 465, an EL layer 402 on the lower electrode 401, and an upper electrode 403 on the EL layer 402. The lower electrode 401 is electrically connected to a source electrode or a drain electrode of a transistor 455. An end of the lower electrode 401 is covered with an insulating layer 405. An insulating layer 496 is provided on the insulating layer 405.
By providing the adhesive layer 96, the distance between the flexible substrate 420 and the flexible substrate 428 can be adjusted. The lower electrode 401 preferably reflects visible light.
The insulating layer 405 has a light-shielding layer 431 that overlaps with the insulating layer 405 via an adhesive layer 407 .

The driver circuit portion 493 includes a plurality of transistors.
1 shows one of the transistors included in the semiconductor memory device.

The conductive layer 457 is electrically connected to an external input terminal which transmits a signal or a potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC 495 is provided as the external input terminal.
Here, an example is shown in which the conductive layer 457 is manufactured using the same material and in the same process as the source electrode and drain electrode of the transistor 455. A connector 497 on the insulating layer 226 is connected to the conductive layer 457 through openings provided in the insulating layer 226, the overcoat 453, the adhesive layer 407, the insulating layer 465, and the insulating layer 463. The connector 497 is connected to the FPC 495. The FPC 495 and the conductive layer 457 are electrically connected to each other through the connector 497.

<Configuration Example 1-4>
Fig. 11A shows a plan view of a light emitting device, and Fig. 11B shows a cross-sectional view taken along dashed line G1-G2 in Fig. 11A. As a modification, Fig. 10B shows a cross-sectional view of a light emitting device.

10B and 11B includes an element layer 1301, an adhesive layer 1305, and a flexible substrate 1303. The element layer 1301 includes a flexible substrate 1401, an adhesive layer 1403, an insulating layer 1405, a plurality of transistors, a conductive layer 1357, an insulating layer 1407, and an insulating layer 1409.
, a plurality of light-emitting elements, an insulating layer 1411 , an adhesive layer 1413 , an overcoat 1461 , a light-shielding layer 1457 , and an insulating layer 1455 .

11B shows an example in which a colored layer 1459 is provided so as to overlap each light-emitting element. The colored layer 1459 is provided at a position overlapping the light-emitting element 1430, and a light-shielding layer 1457 is provided at a position overlapping the insulating layer 1411. The colored layer 1459 and the light-shielding layer 1457 are covered with an overcoat 1461. An adhesive layer 1461 is provided between the light-emitting element 1430 and the overcoat 1461.
413. Note that the colored layer may be provided so as to overlap all the light-emitting elements, or may be provided so as to overlap some of the light-emitting elements as shown in FIG. 10B. For example, when one pixel is composed of four sub-pixels of red, blue, green, and white, the colored layer may not be provided in the white sub-pixel. This reduces the amount of light absorbed by the colored layer, thereby reducing the power consumption of the light-emitting device. Furthermore, light-emitting elements that emit different colors for each sub-pixel may be manufactured. When light-emitting elements that emit different colors for each sub-pixel are manufactured, the colored layer may not be provided.

The conductive layer 1357 is electrically connected to the FPC 1308 via a connector 1415.
As shown in FIG. 1B, when a conductive layer 1357 is provided between a flexible substrate 1401 and a flexible substrate 1303, a connector 14 is inserted into an opening in the flexible substrate 1303, an adhesive layer 1305, etc.
As shown in FIG. 10B, a flexible substrate 1303 and a conductive layer 135
When the insulating layer 1407 and the insulating layer 1409 do not overlap, the connector 1415 may be disposed in an opening provided in the insulating layer 1407 or the insulating layer 1409 on the flexible substrate 1401 .

The light-emitting element 1430 includes a lower electrode 1431, an EL layer 1433, and an upper electrode 1435. The lower electrode 1431 is electrically connected to a source electrode or a drain electrode of a transistor 1440. An end of the lower electrode 1431 is covered with an insulating layer 1411.
The upper electrode 1435 has a light-transmitting property, and the EL layer 143
It transmits the light emitted by 3.

The light emitting device has a plurality of transistors in the light extraction portion 1304 and the driver circuit portion 1306. The transistor 1440 is provided on an insulating layer 1405. The insulating layer 1405 and the flexible substrate 1401 are attached to each other by an adhesive layer 1403.
The insulating layer 1405 is bonded to the flexible substrate 1303 by an adhesive layer 1305.
Using an insulating film with high gas barrier properties for the insulating layer 1455 is preferable because impurities such as moisture and oxygen can be prevented from entering the light-emitting element 1430 or the transistor 1440, thereby increasing the reliability of the light-emitting device.

In the configuration example 1-4, the insulating layer 1405, the transistor 1440, and the like are formed on a highly heat-resistant substrate.
The light emitting element 1430 is manufactured, the manufacturing substrate is peeled off, and the flexible substrate 1 is attached using the adhesive layer 1403.
The light-emitting device can be manufactured by transferring an insulating layer 1405, a transistor 1440, and a light-emitting element 1430 onto the substrate 401. In addition, the configuration example 1-4 shows a light-emitting device that can be manufactured by forming an insulating layer 1455, a coloring layer 1459, and a light-shielding layer 1457 on a highly heat-resistant substrate, peeling off the substrate, and transferring the insulating layer 1455, the coloring layer 1459, and the light-shielding layer 1457 onto a flexible substrate 1303 using an adhesive layer 1305.

When a material (such as a resin) with high moisture permeability and low heat resistance is used for the substrate, high temperatures cannot be applied to the substrate in the manufacturing process, and therefore there are limitations on the conditions for manufacturing a transistor or an insulating film on the substrate. In the manufacturing method of a light-emitting device according to one embodiment of the present invention, a highly reliable transistor or an insulating film with sufficiently high gas barrier properties can be formed because a transistor or the like can be manufactured on a highly heat-resistant manufacturing substrate. Then, by transferring them to a flexible substrate, a highly reliable light-emitting device can be manufactured. In this way, a light-emitting device that is lightweight or thin and highly reliable can be realized in one embodiment of the present invention. The manufacturing method will be described in detail later.

It is preferable to use a material having high toughness for each of the flexible substrate 1303 and the flexible substrate 1401. This makes it possible to realize a display device that has excellent impact resistance and is not easily damaged. For example, by using an organic resin substrate as the flexible substrate 1303 and a substrate using a thin metal or alloy material as the flexible substrate 1401, it is possible to realize a light-emitting device that is lighter and less easily damaged than a substrate using a glass substrate.

Metallic materials and alloy materials have high thermal conductivity and can easily conduct heat to the entire substrate, which is preferable because it can suppress a local temperature rise in the light-emitting device. The thickness of the substrate made of metallic or alloy materials is preferably 10 μm to 200 μm, and more preferably 20 μm to 50 μm.

Furthermore, if a material with high thermal emissivity is used for the flexible substrate 1401, it is possible to prevent the surface temperature of the light-emitting device from becoming too high, and therefore to prevent the light-emitting device from being damaged or its reliability from decreasing. For example, the flexible substrate 1401 may have a laminated structure of a metal substrate and a layer with high thermal emissivity (for example, a metal oxide or a ceramic material can be used).

<Examples of materials>
Next, materials that can be used for the light emitting device will be described. Note that the description of the configurations that have been described above in this embodiment mode will be omitted.

The element layer 1301 includes at least a light-emitting element. As the light-emitting element, an element capable of self-emitting light can be used, and the category of the element includes an element whose luminance is controlled by a current or a voltage. For example, a light-emitting diode (LED), an organic EL element, an inorganic EL element, or the like can be used.

The element layer 1301 may further include a transistor for driving the light-emitting element, a touch sensor, and the like.

The structure of the transistor included in the light-emitting device is not particularly limited. For example, the transistor may be a staggered type transistor or an inverted staggered type transistor. In addition, the transistor may have either a top-gate type or a bottom-gate type structure. The semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, an oxide semiconductor, or the like may be used.

The state of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in a part) may be used. In particular, the use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

Here, it is preferable to use a polycrystalline semiconductor for the transistor. For example, it is preferable to use polycrystalline silicon. Polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to the pixel, the aperture ratio of the pixel can be improved.
Furthermore, even when the pixels are extremely high definition, it becomes possible to form the gate drive circuit and the source drive circuit on the same substrate as the pixels, thereby reducing the number of parts that make up the electronic device.

Alternatively, an oxide semiconductor is preferably used for the transistor. For example, an oxide semiconductor having a wider band gap than silicon is preferably used. It is preferable to use a semiconductor material having a wider band gap than silicon and a lower carrier density because the current in the off state of the transistor can be reduced.

For example, the oxide semiconductor preferably contains at least indium (In) or zinc (Zn). More preferably, the oxide semiconductor is an In-M-Zn-based oxide (wherein M is Al, Ti, Ga,
The oxides include those represented by the formula (I) (metals such as Ge, Y, Zr, Sn, La, Ce or Hf).

Examples of oxide semiconductors include indium oxide, tin oxide, zinc oxide, In-Zn-based oxides, Sn-Zn-based oxides, Al-Zn-based oxides, Zn-Mg-based oxides, Sn-Mg-based oxides, In-Mg-based oxides, In-Ga-based oxides, In-Ga-Zn-based oxides (also referred to as IGZO), In-Al-Zn-based oxides, In-Sn-Zn-based oxides, Sn-Ga-Zn
n-based oxides, Al-Ga-Zn-based oxides, Sn-Al-Zn-based oxides, In-Hf-Zn
based oxides, In-Zr-Zn based oxides, In-Ti-Zn based oxides, In-Sc-Zn based oxides, In-Y-Zn based oxides, In-La-Zn based oxides, In-Ce-Zn based oxides, In-Pr-Zn based oxides, In-Nd-Zn based oxides, In-Sm-Zn based oxides, In-Eu-Zn based oxides, In-Gd-Zn based oxides, In-Tb-Zn based oxides,
In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, I
n-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn oxide, In
-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga-Z
n-based oxides, In-Sn-Al-Zn-based oxides, In-Sn-Hf-Zn-based oxides, In
—Hf—Al—Zn based oxides can be used.

Here, the In-Ga-Zn oxide means an oxide having In, Ga, and Zn as main components, and the ratio of In, Ga, and Zn does not matter. Also, metal elements other than In, Ga, and Zn may be contained.

The oxide semiconductor film is classified into a single-crystal oxide semiconductor film and a non-single-crystal oxide semiconductor film other than the single-crystal oxide semiconductor film.
The term "CAA" refers to a CdCrystalline Oxide Semiconductor film, a polycrystalline oxide semiconductor film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, or the like.
The C-OS film is one of oxide semiconductor films having a plurality of crystal parts aligned along the c-axis.
CAAC-OS film is CANC (C-Axis Aligned nanocrystallized)
The oxide semiconductor film may also be referred to as an oxide semiconductor film having a conductivity type (IS).

In particular, the semiconductor layer has a plurality of crystal parts, and the c-axes of the crystal parts are aligned along a surface on which the semiconductor layer is formed,
Alternatively, it is preferable to use an oxide semiconductor film that is oriented perpendicular to the top surface of the semiconductor layer and does not have grain boundaries between adjacent crystal parts. Since such an oxide semiconductor does not have grain boundaries, cracks are prevented from being generated in the oxide semiconductor film due to stress when a flexible device formed according to one embodiment of the present invention is bent. Therefore, such an oxide semiconductor can be suitably used for devices such as display devices that are flexible and used in a bent state.

Furthermore, by using such a material for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a highly reliable transistor can be realized.

In addition, the low off-state current allows the charge stored in the capacitance through the transistor to be held for a long period of time. By using such a transistor in a pixel, it is possible to stop the driver circuit while maintaining the luminance of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.

A light-emitting element included in the light-emitting device has a pair of electrodes (a lower electrode 1431 and an upper electrode 1435) and an EL layer 1433 provided between the pair of electrodes. One of the pair of electrodes functions as an anode, and the other functions as a cathode.

The light-emitting element may have any of a top emission structure, a bottom emission structure, and a dual emission structure. A conductive film that transmits visible light is used for the electrode from which light is extracted. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO).
The insulating layer can be formed of indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or the like. In addition, the insulating layer can be formed of gold, silver, platinum, magnesium,
Metal materials such as nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, alloys containing these metal materials, or nitrides of these metal materials (e.g., titanium nitride) can also be used by forming them thin enough to be translucent.
A laminated film of the above-mentioned materials can be used as the conductive layer. For example, a laminated film of an alloy of silver and magnesium and ITO can be used, which is preferable because it can increase the conductivity. Graphene, etc. may also be used.

The conductive film reflecting visible light can be made of, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metal materials. Lanthanum, neodymium, germanium, or the like may be added to the above-mentioned metal material or alloy. The conductive film can be formed using an alloy containing aluminum (aluminum alloy), such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, or an alloy of aluminum and neodymium, or an alloy containing silver, such as an alloy of silver and copper, an alloy of silver, palladium, and copper, or an alloy of silver and magnesium. The alloy containing silver and copper is preferable because of its high heat resistance. Furthermore, by stacking a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the material of the metal film or metal oxide film include titanium and titanium oxide. The conductive film transmitting visible light and a film made of a metal material may be stacked. For example, a laminated film of silver and ITO, or a laminated film of an alloy of silver and magnesium and ITO can be used.

The electrodes may be formed by vapor deposition or sputtering, or may be formed by a discharge method such as an ink-jet method, a printing method such as a screen printing method, or a plating method.

When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode and the upper electrode, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side.
The electrons recombine in the layer, and the light-emitting material contained in the EL layer emits light.

The EL layer includes at least a light-emitting layer, and may further include a layer including a substance having a high hole-injecting property, a substance having a high hole-transporting property, a hole-blocking material, a substance having a high electron-transporting property, a substance having a high electron-injecting property, or a bipolar substance (a substance having high electron-transporting property and high hole-transporting property) as a layer other than the light-emitting layer.

The EL layer may be formed using either a low molecular weight compound or a high molecular weight compound, and may contain an inorganic compound. Each of the layers constituting the EL layer 1433 may be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

The light emitting element is preferably provided between a pair of insulating films having high gas barrier properties, which can prevent impurities such as water from entering the light emitting element and can prevent a decrease in the reliability of the light emitting device.

Examples of insulating films with high gas barrier properties include films containing nitrogen and silicon, such as a silicon nitride film and a silicon nitride oxide film, and films containing nitrogen and aluminum, such as an aluminum nitride film. In addition, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, etc. may also be used.

For example, the water vapor permeation rate of an insulating film with high gas barrier properties is 1×10 ⁻⁵ [g/m ² ·day
] or less, preferably 1×10 ⁻⁶ [g/m ² ·day] or less, more preferably 1×10 ^−
7 [g/m ² ·day] or less, and more preferably 1×10 ⁻⁸ [g/m ² ·day] or less.

The flexible substrate is made of a material having flexibility. For example, an organic resin or glass having a thickness sufficient to provide flexibility can be used. Furthermore, a material that transmits visible light is used for the substrate from which light is extracted in the light-emitting device. If the flexible substrate does not need to transmit visible light, a metal substrate or the like can also be used.

Since organic resin has a smaller specific gravity than glass, using an organic resin for a flexible substrate is preferable because it allows the light-emitting device to be lighter than when glass is used.

As a material having flexibility and light transmission, for example, polyethylene terephthalate (PET)
), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient, and for example, polyamideimide resin, polyimide resin, PET, etc. can be suitably used. In addition, a substrate in which a fiber body is impregnated with a resin (also called a prepreg) or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can also be used.

When the fibrous body is contained in a material having flexibility and light transmission, the fibrous body is made of high-strength fibers of organic or inorganic compounds. The high-strength fibers specifically refer to fibers having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aramid fibers, polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers. Examples of glass fibers include glass fibers using E glass, S glass, D glass, Q glass, etc. These may be used in the form of woven or nonwoven fabric, and a structure obtained by impregnating the fibrous body with a resin and hardening the resin may be used as a flexible substrate. It is preferable to use a structure made of a fibrous body and a resin as a flexible substrate, since it improves reliability against breakage due to bending or local pressure.

In order to improve the light extraction efficiency, it is preferable that the refractive index of the flexible and light-transmitting material is high. For example, by dispersing an inorganic filler with a high refractive index in an organic resin, a substrate with a higher refractive index than a substrate made of the organic resin alone can be realized. In particular, it is preferable to use a small inorganic filler with a particle diameter of 40 nm or less, since the optical transparency is not lost.

In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm to 200 μm, more preferably 20 μm to 50 μm. Since the metal substrate has high thermal conductivity,
The heat generated by the light emitting element when it emits light can be effectively dissipated.

The material constituting the metal substrate is not particularly limited, but for example, aluminum, copper, nickel, or alloys of metals such as aluminum alloys or stainless steel can be suitably used.

The flexible substrate may be configured by laminating a layer using the above-mentioned material with a hard coat layer (e.g., a silicon nitride layer, etc.) that protects the surface of the device from scratches, etc., or a layer of a material that can disperse pressure (e.g., an aramid resin layer, etc.), etc. In addition, in order to suppress a decrease in the life of a functional element (particularly an organic EL element, etc.) due to moisture, etc., the substrate may be provided with an insulating film with low water permeability, which will be described later.

The flexible substrate may be used by stacking a plurality of layers. In particular, when the flexible substrate has a glass layer, the barrier property against water and oxygen is improved, and a highly reliable light-emitting device can be obtained.

For example, a flexible substrate can be used in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the organic EL element. The thickness of the glass layer is 20 μm or more and 200 μm or less.
The thickness is preferably 25 μm or more and 100 μm or less. A glass layer having such a thickness can simultaneously realize high barrier properties against water and oxygen and flexibility. In addition, the thickness of the organic resin layer is preferably
The thickness is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer on the outer side of the glass layer, it is possible to suppress breakage or cracking of the glass layer and improve the mechanical strength. By applying such a composite material of glass material and organic resin to the substrate, it is possible to obtain a highly reliable and flexible light-emitting device.

For the adhesive layer, various curing adhesives such as a photo-curing adhesive such as an ultraviolet curing adhesive, a reaction curing adhesive, a heat curing adhesive, an anaerobic adhesive, etc., can be used. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (
Examples of the material include ethylene vinyl acetate resin. In particular, a material with low moisture permeability such as epoxy resin is preferable. A two-part mixed resin may also be used. An adhesive sheet or the like may also be used.

The resin may also contain a desiccant. For example, a substance that adsorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal (calcium oxide, barium oxide, etc.), may be used. Alternatively, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. The inclusion of a desiccant is preferable because it can prevent impurities such as moisture from entering the functional element, thereby improving the reliability of the light-emitting device.

In addition, by mixing a filler having a high refractive index or a light scattering material into the resin, the light extraction efficiency from the light emitting element can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium, etc. can be used.

An inorganic insulating material can be used for the insulating layer 424, the insulating layer 226, the insulating layer 1405, and the insulating layer 1455. In particular, it is preferable to use the insulating film having a high gas barrier property described above, since a highly reliable light-emitting device can be realized. In addition, an insulating film having a high gas barrier property may be formed between the adhesive layer and the upper electrode.

The insulating layers 463 and 1407 have an effect of suppressing diffusion of impurities into a semiconductor included in a transistor. The insulating layers 463 and 1407 can be formed using an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film.

For each of the insulating layers 465, 467, and 1409, it is preferable to select an insulating film having a planarization function in order to reduce surface unevenness due to transistors or the like. For example, an organic material such as polyimide, acrylic, or benzocyclobutene-based resin can be used. In addition to the above organic materials, a low dielectric constant material (low-k material) or the like can be used. Note that a plurality of insulating films or inorganic insulating films formed from these materials may be stacked.

The insulating layer 405 and the insulating layer 1411 are provided to cover the ends of the lower electrode.
5. Resin or an inorganic insulating material can be used as the material of the insulating layer 496 and the insulating layer 1411. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin, phenol resin, or the like can be used as the resin. In particular, it is preferable to use a negative photosensitive resin or a positive photosensitive resin because it makes it easier to manufacture the insulating layer 405, the insulating layer 496, and the insulating layer 1411.

The method for forming the insulating layer 405, the insulating layer 496, and the insulating layer 1411 is not particularly limited, and may be, for example, a photolithography method, a sputtering method, a vapor deposition method, a droplet discharge method (such as an inkjet method), a printing method (
Screen printing, offset printing, etc.) may be used.

Conductive layers such as electrodes and wirings of transistors can be formed as a single layer or a stack of metal materials such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium, or alloy materials containing these elements. The conductive layers may be formed using a conductive metal oxide. Examples of conductive metal oxides include indium oxide ( _{In2O3 , etc.} ), tin oxide ( _SnO2, etc.), and zinc oxide (ZnO3, etc.).
O), ITO, indium zinc oxide (In ₂ O ₃ —ZnO, etc.), or these metal oxide materials containing silicon oxide can be used.

The connector may be a paste or sheet-like material made of a thermosetting resin mixed with metal particles, and may be a material that exhibits anisotropic conductivity when bonded by heat. As the metal particles, it is preferable to use particles in which two or more types of metals are layered, such as nickel particles coated with gold.

The colored layer is a colored layer that transmits light of a specific wavelength band. For example, a red (R) color filter that transmits light of a red wavelength band, a green (G) color filter that transmits light of a green wavelength band, a blue (B) color filter that transmits light of a blue wavelength band, etc. can be used. Each colored layer is formed at a desired position using various materials by a printing method, an inkjet method, an etching method using a photolithography method, etc.

The light-shielding layer is provided between adjacent colored layers. The light-shielding layer blocks light from adjacent organic EL elements and suppresses color mixing between adjacent organic EL elements. Here, light leakage can be suppressed by providing the end of the colored layer so as to overlap the light-shielding layer. As the light-shielding layer, a material that blocks light emitted from the organic EL element can be used, and for example, a black matrix may be formed using a metal material or a resin material containing a pigment or dye. Note that it is preferable to provide the light-shielding layer in an area other than the light-emitting section, such as a driving circuit section, since unintended light leakage due to guided light can be suppressed.

An overcoat may be provided to cover the colored layer and the light-shielding layer, which can prevent impurities contained in the colored layer from diffusing into the organic EL element.
The overcoat is made of a material that transmits light emitted from the organic EL element, and can be, for example, an inorganic insulating film such as a silicon nitride film or a silicon oxide film, or an organic insulating film such as an acrylic film or a polyimide film, or may have a laminated structure of an organic insulating film and an inorganic insulating film.

In addition, when the material of the adhesive layer is applied onto the colored layer and the light-shielding layer, it is preferable to use a material having high wettability with respect to the material of the adhesive layer as the material of the overcoat. For example, it is preferable to use an oxide conductive film such as an ITO film or a metal film such as an Ag film that is thin enough to have light transmission as the overcoat 453 (FIG. 10A).

<Example of manufacturing method>
Next, a method for manufacturing a light emitting device will be illustrated with reference to FIGS.
11B)。 The light emitting device shown in FIG.

First, a peeling layer 1503 is formed over a formation substrate 1501, and an insulating layer 140 is formed over the peeling layer 1503.
Next, a plurality of transistors, a conductive layer 1357, an insulating layer 1407, an insulating layer 1409, a plurality of light-emitting elements, and an insulating layer 1411 are formed over the insulating layer 1405. Note that openings are made in the insulating layer 1409 and the insulating layer 1407 so that the conductive layer 1357 is exposed (see FIG. 1).
2(A)).

In addition, a peeling layer 1507 is formed over the formation substrate 1505, and an insulating layer 145 is formed over the peeling layer 1507.
Next, a light-shielding layer 1457, a coloring layer 1459, and an overcoat 1461 are formed over the insulating layer 1455 (FIG. 12B).

As the formation substrate 1501 and the formation substrate 1505, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, or the like can be used.

The glass substrate may be made of a glass material such as aluminosilicate glass, aluminoborosilicate glass, or barium borosilicate glass. When the temperature of the subsequent heat treatment is high, a glass material having a distortion point of 730° C. or higher may be used. Alternatively, crystallized glass may be used.

When a glass substrate is used as the preparation substrate, a silicon oxide film,
It is preferable to form an insulating film such as a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film, since contamination from the glass substrate can be prevented.

The peeling layers 1503 and 1507 are each made of an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, or silicon, an alloy material containing the element, or a compound material containing the element, and are a single layer or a laminated layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

The release layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like.
The coating method includes a spin coating method, a droplet discharging method, and a dispensing method.

In the case where the peeling layer has a single-layer structure, it is preferable to form a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum. In addition, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In addition, when forming a laminated structure of a layer containing tungsten and a layer containing tungsten oxide as a peeling layer, it is possible to utilize the fact that a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film by forming a layer containing tungsten and forming an insulating film formed of oxide on the layer containing tungsten. In addition, the surface of the layer containing tungsten may be subjected to thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N ₂ O) plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. In addition, the plasma treatment or heat treatment may be performed in an atmosphere of oxygen, nitrogen, or nitrous oxide alone, or a mixed gas of these gases and other gases. By changing the surface state of the peeling layer by the above plasma treatment or heat treatment, it is possible to control the adhesion between the peeling layer and the insulating film formed later.

Each insulating layer can be formed by sputtering, plasma CVD, coating, printing, or the like. For example, the insulating layer can be formed by plasma CVD at a film formation temperature of 250° C. to 400° C.
By forming the film as described below, it is possible to obtain a dense film having extremely high gas barrier properties.

Then, a material to be an adhesive layer 1413 is applied to the surface of the production substrate 1505 on which the colored layer 1459 and the like are provided or the surface of the production substrate 1501 on which the light emitting element 1430 and the like are provided.
The surfaces are then pasted together via a bonding pad (FIG. 12(C)).

Then, the formation substrate 1501 is peeled off, and the exposed insulating layer 1405 and the flexible substrate 1401 are
The formation substrate 1505 is peeled off, and the exposed insulating layer 1455 and the flexible substrate 1303 are attached to each other using the adhesive layer 1305.
) is configured such that the flexible substrate 1303 does not overlap with the conductive layer 1357.
7 and the flexible substrate 1303 may overlap each other.

In one embodiment of the present invention, various peeling methods can be applied to the preparation substrate. For example, when a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled off as a peeling layer, the metal oxide film can be weakened by crystallization, and the layer to be peeled off can be peeled off from the preparation substrate. When an amorphous silicon film containing hydrogen is formed as a peeling layer between the preparation substrate having high heat resistance and the layer to be peeled off, the amorphous silicon film can be removed by irradiation with laser light or etching, and the layer to be peeled off can be peeled off from the preparation substrate. In addition, a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled off as a peeling layer, the metal oxide film is weakened by crystallization, and a part of the peeling layer is removed by etching using a solution or a fluoride gas such as NF ₃ , BrF ₃ , or ClF _3, and then the weakened metal oxide film can be peeled off. Furthermore, a method may be used in which a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used as the peeling layer, and the peeling layer is irradiated with laser light to release the nitrogen, oxygen, or hydrogen contained in the peeling layer as a gas to promote peeling between the layer to be peeled and the substrate. In addition, a method may be used in which the preparation substrate on which the layer to be peeled is formed is mechanically removed or removed by etching with a solution or a fluoride gas such as _NF3 , _BrF3 , or _ClF3 . In this case, the peeling layer may not be provided.

Moreover, by combining a plurality of the above-mentioned peeling methods, the peeling step can be carried out more easily.
That is, the peeling layer is irradiated with laser light, etched with gas or solution, or mechanically removed with a sharp knife or scalpel to make the peeling layer and the layer to be peeled easy to peel from each other,
Peeling can also be achieved by physical force (mechanically or otherwise).

The layer to be peeled off may be peeled off from the preparation substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. The peeling may be performed while pouring liquid. This can prevent static electricity generated during peeling from adversely affecting the functional element contained in the layer to be peeled off (e.g., the semiconductor element is destroyed by static electricity). The liquid may be sprayed in the form of a mist or vapor. As the liquid, pure water or an organic solvent may be used, and a neutral, alkaline or acidic aqueous solution, or an aqueous solution in which a salt is dissolved, may be used.

As another peeling method, in the case where the peeling layer is formed of tungsten, the peeling layer may be etched with a mixed solution of ammonia water and hydrogen peroxide water.

Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided.
For example, glass is used as a preparation substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next, laser irradiation or heat treatment is performed to improve adhesion between the preparation substrate and the organic resin. Then, an insulating film, a transistor, or the like is formed on the organic resin. After that, laser irradiation is performed with a higher energy density than the previous laser irradiation, or heat treatment is performed at a higher temperature than the previous heat treatment, thereby enabling separation at the interface between the preparation substrate and the organic resin. Furthermore, during separation, a liquid may be permeated into the interface between the preparation substrate and the organic resin to separate them.

In this method, since an insulating film, a transistor, and the like are formed on an organic resin having low heat resistance, a substrate cannot be subjected to high temperatures in the manufacturing process. Here, a transistor using an oxide semiconductor can be suitably formed on an organic resin because a high-temperature manufacturing process is not essential.

The organic resin may be used as a substrate constituting a light emitting device, or the organic resin may be removed and another substrate may be attached to the exposed surface of the peeled layer using an adhesive.

Alternatively, a metal layer may be provided between the formation substrate and the organic resin, and the metal layer may be heated by passing a current through the metal layer, thereby performing peeling at the interface between the metal layer and the organic resin.

Finally, the insulating layer 1455 and the adhesive layer 1413 are opened to expose the conductive layer 1357 (FIG. 13B). In the case where the flexible substrate 1303 overlaps with the conductive layer 1357, the flexible substrate 1303 and the adhesive layer 1305 are also opened (FIG. 13C). The means for opening is not particularly limited, and for example, a laser ablation method, an etching method, an ion beam sputtering method, or the like may be used. Alternatively, a cut may be made in the film on the conductive layer 1357 using a sharp blade or the like, and a part of the film may be peeled off by physical force.

By the above steps, a light-emitting device can be produced.

In this specification and the like, an active matrix system in which pixels have active elements (active elements, nonlinear elements) or a passive matrix system in which pixels do not have active elements can be used.

In the active matrix method, not only transistors but also various other active elements can be used as active elements. For example, MIM (Metal Insulator Metal)
It is also possible to use a thin film diode (TFD) or a thin film diode (TFD). These elements require fewer manufacturing steps, which can reduce manufacturing costs and improve yields. In addition, these elements have a small element size, which can improve the aperture ratio, and can reduce power consumption and increase brightness.

In the passive matrix method, since active elements are not used, the number of manufacturing steps is reduced, which makes it possible to reduce manufacturing costs and improve yields. In addition, since no active elements are used, the aperture ratio can be improved, which makes it possible to achieve low power consumption and high brightness.

This embodiment can be combined with other embodiments as appropriate.

(Seventh embodiment)
In this embodiment, the structure of a foldable touch panel will be described with reference to Figs. 14 to 17. Note that for the materials of each layer, reference can be made to Embodiment 6. Note that in this embodiment, a touch panel using an organic EL element is illustrated, but the present invention is not limited thereto. In one embodiment of the present invention, for example, a touch panel using another element exemplified in Embodiment 6 can be manufactured.

<Configuration Example 2-1>
14A is a top view of the touch panel.
14(C) is a cross-sectional view taken along dashed line E in FIG.
This is a cross-sectional view taken along line -F.

As shown in FIG. 14(A), the touch panel 390 has a display unit 301.

The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. The imaging pixels 308 can detect a finger or the like touching the display unit 301. This allows the imaging pixels 308 to form a touch sensor.

The pixel 302 comprises a number of sub-pixels (eg, sub-pixel 302R), each of which comprises a light-emitting element and a pixel circuit capable of providing power to drive the light-emitting element.

The pixel circuit is electrically connected to a wiring capable of supplying a selection signal and a wiring capable of supplying an image signal.

The touch panel 390 also includes a scanning line driver circuit 303 g ( 1 ) capable of supplying a selection signal to the pixels 302 , and an image signal line driver circuit 303 s ( 1 ) capable of supplying an image signal to the pixels 302 .

The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.

The imaging pixel circuit is electrically connected to a wiring capable of supplying a control signal and a wiring capable of supplying a power supply potential.

Examples of control signals include a signal that can select an imaging pixel circuit that will read out a recorded imaging signal, a signal that can initialize an imaging pixel circuit, and a signal that can determine the time at which the imaging pixel circuit detects light.

The touch panel 390 includes an imaging pixel drive circuit 303g(2) capable of supplying control signals to the imaging pixels 308, and an imaging signal line drive circuit 303s(2) that reads out imaging signals.

As shown in FIG. 14B , a touch panel 390 includes a substrate 510 and a substrate 570 facing the substrate 510 .

Flexible materials can be suitably used for substrate 510 and substrate 570.

A material that suppresses impurity permeation can be suitably used for the substrate 510 and the substrate 570. For example, a material that has a water vapor permeability of 10 ⁻⁵ g/m ² ·day or less, preferably 10 ⁻⁶ g/m
A material having a life of ² ·day or less can be preferably used.

Materials having approximately the same linear expansion coefficient may be suitably used for substrate 510 and substrate 570 .
For example, a material having a linear expansion coefficient of 1×10 ⁻³ /K or less, preferably 5×10 ⁻⁵ /K or less, and more preferably 1×10 ⁻⁵ /K or less can be suitably used.

The substrate 510 includes a flexible substrate 510b, an insulating layer 510a for preventing diffusion of impurities into the light emitting element,
and an adhesive layer 510c that bonds the flexible substrate 510b and the insulating layer 510a to each other, to form a laminate.

The substrate 570 includes a flexible substrate 570b, an insulating layer 570a for preventing diffusion of impurities into the light emitting element,
and an adhesive layer 570c that bonds the flexible substrate 570b and the insulating layer 570a.

For example, materials including polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, or resins having acrylic, urethane, epoxy, or siloxane bonds can be used for the adhesive layer.

The sealing layer 560 bonds the substrate 570 and the substrate 510 together. The sealing layer 560 has a refractive index greater than that of air. The pixel circuits and the light emitting elements (for example, the first light emitting element 350R) are mounted on the substrate 570.
10 and the substrate 570 .

The pixel 302 includes a sub-pixel 302R, a sub-pixel 302G, and a sub-pixel 302B (see FIG. 14).
C)). Also, the sub-pixel 302R includes a light emitting module 380R, the sub-pixel 302G includes a light emitting module 380G, and the sub-pixel 302B includes a light emitting module 380B.

For example, the sub-pixel 302R includes a pixel circuit including a first light-emitting element 350R and a transistor 302t capable of supplying power to the first light-emitting element 350R (FIG. 14B).
The light emitting module 380R includes a first light emitting element 350R and an optical element (e.g., a colored layer 3
67R).

The light emitting element 350R has a first lower electrode 351R, an upper electrode 352, and an EL layer 353 between the lower electrode 351R and the upper electrode 352 (FIG. 14C).

The EL layer 353 includes a light-emitting unit 353 a, a light-emitting unit 353 b, and a light-emitting unit 35
3a and an intermediate layer 354 between the light-emitting unit 353b.

The light-emitting module 380R has a first colored layer 367R on the substrate 570. The colored layer may be any layer that transmits light having a specific wavelength, and may selectively transmit light of, for example, red, green, or blue. Alternatively, a region that transmits light emitted by the light-emitting element as is may be provided. Furthermore, each light-emitting element may emit a different light color. In this case, a colored layer may or may not be provided.

For example, the light emitting module 380R has a sealing layer 560 in contact with the light emitting element 350R and the colored layer 367R.

The colored layer 367R is located so as to overlap the light emitting element 350R.
A part of the light emitted by the light emitting module 380R is transmitted through the sealing layer 560 and the colored layer 367R and is emitted to the outside of the light emitting module 380R as indicated by the arrow in the figure.

The touch panel 390 includes a light-shielding layer 367BM on a substrate 570. The light-shielding layer 367BM is
It is provided so as to surround a colored layer (for example, the colored layer 367R).

The touch panel 390 includes an anti-reflection layer 367p at a position overlapping the display unit 301. As the anti-reflection layer 367p, for example, a circular polarizing plate can be used.

The touch panel 390 includes an insulating layer 321. The insulating layer 321 covers the transistor 302t. Note that the insulating layer 321 can be used as a layer for planarizing unevenness caused by a pixel circuit. In addition, an insulating layer in which a layer capable of suppressing diffusion of impurities to the transistor 302t or the like is stacked can be used as the insulating layer 321.

The touch panel 390 has a light-emitting element (eg, light-emitting element 350R) on an insulating layer 321.

The touch panel 390 has a partition 328 that overlaps an end of the lower electrode 351R on an insulating layer 321. In addition, a spacer 329 that controls the distance between the substrate 510 and the substrate 570 is provided between the partition 328 and the insulating layer 321.
Have it on top.

The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c.
The driver circuit can be formed on the same substrate as the pixel circuit in the same process.
As shown in FIG. 1B, the transistor 303t may have a second gate 304 on the insulating layer 321. The second gate 304 may be electrically connected to the gate of the transistor 303t, or different potentials may be applied to the gate and the gate. If necessary, the second gate 304 may be provided in the transistor 308t, the transistor 302t, etc.

The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit for detecting light irradiated to the photoelectric conversion element 308p. The imaging pixel circuit also includes a transistor 308t.

For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

The touch panel 390 includes a wiring 311 capable of supplying a signal, and a terminal 319 is provided on the wiring 311. An FPC 309(1) capable of supplying signals such as an image signal and a synchronization signal is electrically connected to the terminal 319.
) may have a printed wiring board (PWB) attached to it.

The transistors formed in the same process are transistors 302t and 303t.
, transistor 308t, and the like.

Materials that can be used for the gate, source, and drain of a transistor as well as various wirings and electrodes that constitute a touch panel include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or alloys containing these as the main component, in a single-layer structure or a multi-layer structure. For example, there are a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film,
There are two-layer structures in which a copper film is laminated on a tungsten film, a three-layer structure in which a titanium film or titanium nitride film is laminated on the titanium film or titanium nitride film, an aluminum film or copper film is laminated on the titanium film or titanium nitride film, and a titanium film or titanium nitride film is further formed on the titanium film or titanium nitride film, and a three-layer structure in which a molybdenum film or molybdenum nitride film is laminated on the molybdenum film or molybdenum nitride film, an aluminum film or copper film is laminated on the molybdenum film or molybdenum nitride film, and a molybdenum film or molybdenum nitride film is further formed on the molybdenum film or molybdenum nitride film. A transparent conductive material containing indium oxide, tin oxide, or zinc oxide may also be used. In addition, it is preferable to use copper containing manganese because it enhances the controllability of the shape by etching.

<Configuration Example 2-2>
15A and 15B are perspective views of the touch panel 505. For clarity, only representative components are shown. Fig. 16A is a cross-sectional view taken along dashed line G3-G4 in Fig. 15A.

The touch panel 505 includes a display unit 501 and a touch sensor 595 (FIG. 15B).
The touch panel 505 includes a substrate 510, a substrate 570, and a substrate 590.
The substrate 510, the substrate 570 and the substrate 590 are all flexible.

The display portion 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a plurality of wirings 511 capable of supplying signals to the pixels. The plurality of wirings 511 are routed to the outer periphery of the substrate 510, and some of the wirings 511 form terminals 519. The terminals 519 are connected to an FPC 509(1).
and electrically connect it to.

The substrate 590 includes a touch sensor 595 and a plurality of wirings 598 electrically connected to the touch sensor 595. The plurality of wirings 598 are routed around the outer periphery of the substrate 590, and some of the wirings 598 form terminals. The terminals are electrically connected to the FPC 509(2).
In FIG. 15B, for clarity, electrodes, wirings, and the like of a touch sensor 595 provided on the back surface side of the substrate 590 (the surface side facing the substrate 510) are shown by solid lines.

For example, a capacitive touch sensor can be used as the touch sensor 595. The capacitive touch sensor may be a surface capacitive touch sensor, a projected capacitive touch sensor, or the like.

The projected capacitive type is classified into a self-capacitance type, a mutual capacitance type, etc., mainly depending on the driving method. The mutual capacitance type is preferable because it enables simultaneous multi-point detection.

Hereinafter, a case where a projected capacitive touch sensor is applied will be described with reference to FIG.

It should be noted that various sensors capable of detecting the proximity or contact of a detection target such as a finger can be applied.

The projected capacitive touch sensor 595 has a first electrode 591 and a second electrode 592. The first electrode 591 is electrically connected to one of a plurality of wirings 598, and the second electrode 592 is electrically connected to one of a plurality of wirings 598.
92 is electrically connected to any other of the multiple wirings 598 .

As shown in FIGS. 15A and 15B, the second electrode 592 has a shape in which a plurality of quadrilaterals are repeatedly arranged in one direction and connected at their corners.

The first electrodes 591 are quadrilateral-shaped and are repeatedly arranged in a direction intersecting the direction in which the second electrodes 592 extend.

The wiring 594 electrically connects two first electrodes 591 sandwiching one of the second electrodes 592. In this case, it is preferable that the area of the intersection between the second electrode 592 and the wiring 594 is as small as possible. This can reduce the area of the region where no electrode is provided, and can reduce unevenness in transmittance. As a result, unevenness in the luminance of light passing through the touch sensor 595 can be reduced.

The shapes of the first electrode 591 and the second electrode 592 are not limited to this, and may take various shapes. For example, a plurality of strip-shaped first electrodes are arranged so as to have as few gaps as possible, and a plurality of strip-shaped second electrodes are arranged so as to intersect with the first electrodes via an insulating layer. In this case, the two adjacent second electrodes may be arranged to be spaced apart. Furthermore, it is preferable to provide a dummy electrode electrically insulated from the two adjacent second electrodes between them, since this can reduce the area of the region with different transmittance.

The touch sensor 595 includes a substrate 590 and first electrodes 59 arranged in a staggered pattern on the substrate 590.
The semiconductor device includes first and second electrodes 592 , an insulating layer 593 covering the first electrodes 591 and the second electrodes 592 , and wiring 594 electrically connecting adjacent first electrodes 591 .

The adhesive layer 597 attaches the substrate 590 to the substrate 570 so that the touch sensor 595 overlaps with the display portion 501 as shown in FIG. 15B.

The first electrode 591 and the second electrode 592 are formed using a light-transmitting conductive material.
As the conductive material having light-transmitting properties, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide doped with gallium can be used. Note that a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of a method for reduction include a method of applying heat.

After a light-transmitting conductive material is formed on a substrate 590 by a sputtering method, unnecessary portions can be removed by various patterning techniques such as photolithography to form a first electrode 591 and a second electrode 592.

In addition, examples of materials that can be used for the insulating layer 593 include resins such as acrylic and epoxy, resins having siloxane bonds, and inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide.

In addition, an opening reaching the first electrode 591 is provided in the insulating layer 593, and a wiring 594 electrically connects the adjacent first electrodes 591. A light-transmitting conductive material can be preferably used for the wiring 594 because it can increase the aperture ratio of the touch panel.
A material having a higher conductivity than the first electrode 591 and the second electrode 592 can reduce electrical resistance.
4 can be suitably used.

Each of the second electrodes 592 extends in one direction, and a plurality of the second electrodes 592 are provided in a stripe pattern.

The wiring 594 is arranged to intersect with one of the second electrodes 592.

A pair of first electrodes 591 are provided with one of the second electrodes 592 interposed therebetween, and a wiring 594 electrically connects the pair of first electrodes 591 to each other.

It should be noted that the multiple first electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one of the second electrodes 592 .

One wiring 598 is electrically connected to the first electrode 591 or the second electrode 592. A part of the wiring 598 functions as a terminal. The wiring 598 can be made of, for example, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material containing such a metal material.

Note that an insulating layer that covers the insulating layer 593 and the wiring 594 can be provided to protect the touch sensor 595 .

In addition, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

The connection layer 599 may be made of various anisotropic conductive films (ACFs).
Conductive Film) and Anisotropic Conductive Paste (ACP)
pic Conductive Paste) can be used.

The adhesive layer 597 has a light-transmitting property. For example, a thermosetting resin or an ultraviolet curing resin can be used, and specifically, a resin such as an acrylic resin, an urethane resin, an epoxy resin, or a resin having a siloxane bond can be used.

The display unit 501 includes a plurality of pixels arranged in a matrix. Each pixel includes a display element and a pixel circuit that drives the display element.

In this embodiment, a case will be described in which an organic EL element that emits white light is used as a display element, but the display element is not limited to this.

For example, organic EL elements that emit different luminescent colors may be applied to each sub-pixel so that the color of light emitted from each sub-pixel differs. In this case, the colored layer does not need to be provided.

The substrate 510, the substrate 570, and the sealing layer 560 can have the same structure as in Structural Example 2-1.

The pixel includes a subpixel 502R, which includes a light-emitting module 580R.

The sub-pixel 502R includes a pixel circuit including a first light-emitting element 550R and a transistor 502t capable of supplying power to the first light-emitting element 550R.
80R includes a first light emitting element 550R and an optical element (eg, a colored layer 567R).

The light-emitting element 550R has a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode.

The light-emitting module 580R has a first colored layer 567R in the direction in which light is extracted.

Furthermore, when the sealing layer 560 is provided on the side from which light is extracted, the sealing layer 560 contacts the first light emitting element 550R and the first colored layer 567R.

The first colored layer 567R is located so as to overlap the first light emitting element 550R, so that a portion of the light emitted by the light emitting element 550R passes through the first colored layer 567R and is emitted to the outside of the light emitting module 580R in the direction of the arrow shown in the figure.

The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. The light-shielding layer 567BM is
It is provided so as to surround a colored layer (for example, the first colored layer 567R).

The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixel.
As the polarizing plate, for example, a circular polarizing plate can be used.

The display portion 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Note that the insulating film 521 can be used as a layer for planarizing unevenness caused by a pixel circuit. A stacked film including a layer that can suppress diffusion of impurities can be applied to the insulating film 521. This can suppress a decrease in reliability of the transistor 502t and the like due to diffusion of impurities.

The display unit 501 has a light-emitting element (for example, a first light-emitting element 550 R) on an insulating film 521 .

The display portion 501 has a partition wall 528 over an insulating film 521 , the partition wall 528 overlapping an end portion of a first lower electrode.
In addition, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528 .

The scanning line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Note that the driver circuit can be formed over the same substrate as the pixel circuit in the same process.

The display unit 501 includes a wiring 511 capable of supplying a signal.
1. In addition, an FP capable of supplying signals such as image signals and synchronization signals is provided.
C509(1) is electrically connected to terminal 519.

In addition, a printed wiring board (PWB) may be attached to the FPC 509(1).

The display portion 501 has wirings such as scan lines, signal lines, and power supply lines. The above-mentioned various conductive films can be used for the wirings.

Note that various transistors can be applied to the display portion 501. A structure in which bottom-gate transistors are applied to the display portion 501 is illustrated in FIGS.

For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be used for a transistor 502t and a transistor 503t illustrated in FIG.

For example, a semiconductor layer containing polycrystalline silicon crystallized by treatment such as laser annealing can be used for the transistor 502t and the transistor 503t illustrated in FIG.

In addition, a configuration in which a top-gate type transistor is applied to the display unit 501 is shown in FIG.
As shown in FIG.

For example, a semiconductor layer including a polycrystalline silicon film or a single crystal silicon film transferred from a single crystal silicon substrate or the like is used as the transistor 502t and the transistor 50
It can be applied to 3t.

<Configuration Example 2-3>
17 is a cross-sectional view of the touch panel 505B. The touch panel 505B described in this embodiment has a display unit 5 that displays supplied image information on the side where the transistors are provided.
01 and that the touch sensor is provided on the substrate 510 side of the display unit. Here, the different configurations will be described in detail, and the above description will be used for parts where a similar configuration can be used.

The first colored layer 567R is located so as to overlap with the first light-emitting element 550R.
) emits light toward the side where the transistor 502t is provided. As a result, part of the light emitted by the light emitting element 550R is transmitted through the first coloring layer 567R,
The light is emitted to the outside of light emitting module 580R in the direction of the arrow shown in the figure.

The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. The light-shielding layer 567BM is
It is provided so as to surround a colored layer (for example, the first colored layer 567R).

The touch sensor 595 is provided on the substrate 510 side of the display portion 501 (FIG. 17A).
.

The adhesive layer 597 is between the substrate 510 and the substrate 590 and connects the display unit 501 and the touch sensor 59
Glue 5 together.

Note that various transistors can be applied to the display portion 501. A structure in which bottom-gate transistors are applied to the display portion 501 is illustrated in FIGS.

For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be used for a transistor 502t and a transistor 503t illustrated in FIG.

For example, a semiconductor layer containing polycrystalline silicon or the like is used as a transistor 50 shown in FIG.
2t and transistor 503t.

In addition, a configuration in which a top-gate type transistor is applied to the display unit 501 is shown in FIG.
As shown in FIG.

For example, a semiconductor layer including polycrystalline silicon or a transferred single crystal silicon film is formed as shown in FIG.
The present invention can be applied to a transistor 502t and a transistor 503t shown in FIG.

This embodiment can be combined with other embodiments as appropriate.

10 Housing 11 Display device 11a Display area 11b Non-display area 11c First area 11d Second area 13 Protective layer 13a Protective layer 13b Protective layer 15 Support 15a Support 15b Support 16 Winding section 17 Light-transmitting area 18 Member 19 Fixing section 20 Member 21 Operation button 31 Operation button 32 Image sensor 226 Insulating layer 301 Display section 302 Pixel 302B Sub-pixel 302G Sub-pixel 302R Sub-pixel 302t Transistor 303c Capacitor 303g (1) Scanning line driving circuit 303g (2) Imaging pixel driving circuit 303s (1) Image signal line driving circuit 303s (2) Imaging signal line driving circuit 303t Transistor 304 Gate 308 Imaging pixel 308p Photoelectric conversion element 308t Transistor 309 FPC
311 Wiring 319 Terminal 321 Insulating layer 328 Partition wall 329 Spacer 350R Light emitting element 351R Lower electrode 352 Upper electrode 353 EL layer 353a Light emitting unit 353b Light emitting unit 354 Intermediate layer 367BM Light shielding layer 367p Anti-reflection layer 367R Colored layer 380B Light emitting module 380G Light emitting module 380R Light emitting module 390 Touch panel 401 Lower electrode 402 EL layer 403 Upper electrode 405 Insulating layer 407 Adhesive layer 420 Flexible substrate 422 Adhesive layer 424 Insulating layer 426 Adhesive layer 428 Flexible substrate 431 Light shielding layer 432 Colored layer 435 Conductive layer 450 Organic EL element 453 Overcoat 454 Transistor 455 Transistor 457 Conductive layer 463 Insulating layer 465 Insulating layer 467 Insulating layer 491 Light emitting section 493 Driving circuit section 495 FPC
496 Insulating layer 497 Connector 501 Display portion 502R Sub-pixel 502t Transistor 503c Capacitor 503g Scanning line driving circuit 503t Transistor 505 Touch panel 505B Touch panel 509 FPC
510 Substrate 510a Insulating layer 510b Flexible substrate 510c Adhesive layer 511 Wiring 519 Terminal 521 Insulating film 528 Partition wall 550R Light emitting element 560 Sealing layer 567BM Light shielding layer 567p Antireflection layer 567R Colored layer 570 Substrate 570a Insulating layer 570b Flexible substrate 570c Adhesive layer 580R Light emitting module 590 Substrate 591 First electrode 592 Second electrode 593 Insulating layer 594 Wiring 595 Touch sensor 597 Adhesive layer 598 Wiring 599 Connection layer 1301 Element layer 1303 Flexible substrate 1304 Part 1305 Adhesive layer 1306 Drive circuit part 1308 FPC
1357 Conductive layer 1401 Flexible substrate 1403 Adhesive layer 1405 Insulating layer 1407 Insulating layer 1409 Insulating layer 1411 Insulating layer 1413 Adhesive layer 1415 Connector 1430 Light-emitting element 1431 Lower electrode 1433 EL layer 1435 Upper electrode 1440 Transistor 1455 Insulating layer 1457 Light-shielding layer 1459 Colored layer 1461 Overcoat 1501 Preparation substrate 1503 Peeling layer 1505 Preparation substrate 1507 Peeling layer

Claims (7)

A display panel having a display area and a non-display area surrounding the display area in a frame shape,
A light-emitting device that can be folded with a display surface of the display panel facing inward,
a first protective layer having an area facing a surface of the display panel opposite to the display surface;
a first support and a second support overlapping the display panel with the first protective layer interposed therebetween;
a second protective layer having an area facing the display surface of the display panel;
a third support and a fourth support overlapping the display panel with the second protective layer interposed therebetween;
having
the display panel has a first portion overlapping the first support, a second portion overlapping the second support, and a third portion located between the first portion and the second portion and having a radius of curvature in a folded state;
the first support overlaps with the third support via the first portion;
the second support overlaps with the fourth support via the second portion;
the first support has a region fixed to the first portion via an adhesive and the first protective layer;
the second support has a region fixed to the second portion via an adhesive and the first protective layer;
the first protective layer overlaps with each of the first portion, the second portion, and the third portion;
the second protective layer overlaps with the first protective layer through a region corresponding to the non-display region of the third portion, and does not overlap with the display region;
The first protective layer has a function as a light-shielding film.
Light emitting device. In claim 1,
The first protective layer has a higher flexibility than the first support and the second support.
Light emitting device. In claim 1 or 2,
The first protective layer comprises a metal.
Light emitting device. In any one of claims 1 to 3,
The second protective layer comprises a rubber.
Light emitting device. In any one of claims 1 to 4,
the first protective layer is more flexible than the first support and the second support;
the second protective layer has a higher flexibility than the third support and the fourth support;
Light emitting device. In any one of claims 1 to 5,
The radius of curvature is 1 mm or more and 100 mm or less.
Light emitting device. In any one of claims 1 to 6,
the first support and the second support comprise a metal;
Light emitting device.

Images