JP7550859B2 - 高密度プラズマ化学気相堆積チャンバ - Google Patents
高密度プラズマ化学気相堆積チャンバ Download PDFInfo
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- JP7550859B2 JP7550859B2 JP2022536555A JP2022536555A JP7550859B2 JP 7550859 B2 JP7550859 B2 JP 7550859B2 JP 2022536555 A JP2022536555 A JP 2022536555A JP 2022536555 A JP2022536555 A JP 2022536555A JP 7550859 B2 JP7550859 B2 JP 7550859B2
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- 238000005229 chemical vapour deposition Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 51
- 239000002243 precursor Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 14
- 230000001939 inductive effect Effects 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims 5
- 238000000429 assembly Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 description 97
- 238000000034 method Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (11)
- プラズマ堆積チャンバであって、
内部領域の周囲に配置されたチャンバ本体と、
内部領域内の基板支持体と、
複数の支持部材と、複数の支持部材のうちの1又は複数に各々結合された複数の有孔タイルとを有し、基板支持体の上方に配置されたシャワーヘッドと、
前記複数の有孔タイルの上方に隔離して配置される、複数の誘電体プレートと、
前記複数の誘電体プレートの各々の上に配置される複数の誘導結合器と、を備え、
前記複数の支持部材の各々は、前記誘電体プレートのうちの1つと前記有孔タイルのうちの1つとの間に形成される領域に前駆体ガスを供給するように構成された導管を含み、前記導管は各々、流量制限装置を含み、
複数の支持部材は、第1の支持部材と第2の支持部材とを含み、
第1の支持部材内の導管の流量制限装置は第1の直径を有し、
第2の支持部材内の導管の流量制限装置は、第1の直径とは異なる第2の直径を有する、
プラズマ堆積チャンバ。 - 第1の支持部材内の導管の流量制限装置は第1の長さを有し、第2の支持部材内の導管の流量制限装置は第1の長さとは異なる第2の長さを有する、請求項1に記載のチャンバ。
- 前記複数の有孔タイル及び前記複数の支持部材は各々、界面部分を含む、請求項1に記載のチャンバ。
- 前記有孔タイルの各々の周囲に位置決めされたカバープレートを更に備える、請求項1に記載のチャンバ。
- 前記カバープレートは、その中に形成された開口部を含む、請求項4に記載のチャンバ。
- 各有孔タイルは、前記カバープレートに形成された開口部に整列する開口部を含む、請求項5に記載のチャンバ。
- 前記シャワーヘッドは、中央ゾーン、前記中央ゾーンに隣接する中間ゾーン、及び前記中間ゾーンに隣接する外側ゾーンを含む個別のガス供給ゾーンに分割されている、請求項1に記載のチャンバ。
- プラズマ堆積チャンバ用のシャワーヘッドであって、
第1の支持部材及び第2の支持部材を含む複数の支持部材であって、各支持部材は、1以上の第1の支持面及び1以上の第2の支持面を含む支持部材であって、複数の第1の支持面は、複数の第2の支持面と隔離して配置される、支持部材と、
複数の有孔タイルと複数の誘電体プレートとを含む複数のガス供給アセンブリであって、前記複数のガス供給アセンブリは各々、
前記複数の第1の支持面のうちの第1の支持面に配置された有孔タイルと、
前記複数の第2の支持面のうちの第2の支持面に配置された誘電体プレートと
を含み、前記誘電体プレートの面と前記有孔タイルの面との間にガス領域が画定される、複数のガス供給アセンブリと、
各導管が、前記複数のガス供給アセンブリのガス領域の1つに前駆体ガスを供給するように構成された、第1の支持部材における第1の導管および第2の支持部材における第2の導管を含む複数の導管であって、前記導管は各々、流量制限装置を含み、
第1の導管の流量制限装置は第1の長さを有し、
第2の導管の流量制限装置は、第1の長さとは異なる第2の長さを有する、
複数の導管と、
前記シャワーヘッド内の前記複数のガス供給アセンブリの各々の上に配置されたコイルと
を備える、シャワーヘッド。 - 第1の支持部材内の導管の流量制限器は第1の直径を有し、第2の支持部材内の導管の流量制限器は第1の直径とは異なる第2の直径を有する、請求項8に記載のシャワーヘッド。
- 前記複数の有孔タイルの各々と前記支持部材とは、界面部分を含む、請求項8に記載のシャワーヘッド。
- 前記有孔タイルの各々の周囲に位置決めされたカバープレートを更に備える、請求項8に記載のシャワーヘッド。
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PCT/US2019/066929 WO2021126172A1 (en) | 2019-12-17 | 2019-12-17 | High density plasma enhanced chemical vapor deposition chamber |
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JP2023507111A JP2023507111A (ja) | 2023-02-21 |
JP7550859B2 true JP7550859B2 (ja) | 2024-09-13 |
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JP (1) | JP7550859B2 (ja) |
KR (1) | KR20220114044A (ja) |
CN (1) | CN114787415B (ja) |
TW (1) | TW202136569A (ja) |
WO (1) | WO2021126172A1 (ja) |
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US12080516B2 (en) | 2021-11-23 | 2024-09-03 | Applied Materials, Inc. | High density plasma enhanced process chamber |
US20240087847A1 (en) * | 2022-09-09 | 2024-03-14 | Applied Materials, Inc. | Symmetric antenna arrays for high density plasma enhanced process chamber |
CN115261820B (zh) * | 2022-09-20 | 2023-01-20 | 拓荆科技(上海)有限公司 | 一种反应腔结构及其半导体设备 |
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-
2019
- 2019-12-17 JP JP2022536555A patent/JP7550859B2/ja active Active
- 2019-12-17 CN CN201980102887.6A patent/CN114787415B/zh active Active
- 2019-12-17 KR KR1020227023984A patent/KR20220114044A/ko not_active Application Discontinuation
- 2019-12-17 WO PCT/US2019/066929 patent/WO2021126172A1/en active Application Filing
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- 2020-11-06 TW TW109138750A patent/TW202136569A/zh unknown
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JP2006073354A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP2009246129A (ja) | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | プラズマcvd窒化珪素膜の成膜方法及び半導体集積回路装置の製造方法 |
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KR20220114044A (ko) | 2022-08-17 |
CN114787415B (zh) | 2024-09-13 |
TW202136569A (zh) | 2021-10-01 |
JP2023507111A (ja) | 2023-02-21 |
CN114787415A (zh) | 2022-07-22 |
WO2021126172A1 (en) | 2021-06-24 |
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