JP7550859B2 - High Density Plasma Chemical Vapor Deposition Chamber - Google Patents

Description

[0001] Embodiments of the present disclosure generally relate to apparatus for processing large area substrates. More specifically, embodiments of the present disclosure relate to chemical vapor deposition systems for device manufacturing.

[0002] In the manufacture of solar panels or flat panel displays, many processes are employed to deposit thin films onto substrates, such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and/or organic light emitting diode (OLED) substrates, to form electronic devices thereon. Deposition is generally accomplished by introducing precursor gases into a vacuum chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gases are typically directed through a gas distribution plate located near the top of the vacuum chamber. The precursor gases in the vacuum chamber may be energized (e.g., excited) into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The excited gases react to form a layer of material on a surface of a substrate positioned on a temperature-controlled substrate support.

[0003] The size of substrates for forming electronic devices is now routinely greater than one square meter in surface area. Achieving uniformity of film thickness across such substrates is difficult. Film thickness uniformity becomes even more difficult as substrate size increases. Conventionally, plasma is formed in conventional chambers to ionize gas atoms and form radicals, and the radicals of the deposition gas are useful for deposition of film layers on substrates of this size using a capacitively coupled electrode configuration. Recently, inductively coupled plasma configurations that have been used for deposition on round substrates and wafers have been considered for use in deposition processes on such large substrates. However, inductive coupling utilizes dielectric materials as structural support components, and these materials do not have the structural strength to withstand the structural loads caused by the presence of atmospheric pressure on one side of the large area structure of the chamber on the atmospheric side and the vacuum pressure conditions on the other side used in conventional chambers for such large substrates. Therefore, inductively coupled plasma systems for large area substrate plasma processing are being developed. However, process uniformity, e.g., uniformity of deposition thickness across the large area substrate, is not desirable.

[0004] Thus, there is a need for an inductively coupled plasma source for use on large area substrates that is configured to improve film thickness uniformity across the deposition surface of the substrate.

[0005] Embodiments of the present disclosure include methods and apparatus for a showerhead and a plasma deposition chamber having a showerhead that can form one or more layers of a film on a large area substrate.

[0006] In one embodiment, a showerhead for a plasma deposition chamber is provided that includes a plurality of perforated tiles each coupled to one or more of a plurality of support members and a plurality of inductive couplers in the showerhead, where one of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, and the support members deliver precursor gas to a region formed between the inductive coupler and the perforated tile.

[0007] In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles, an inductive coupler corresponding to one or more of the plurality of perforated tiles, and a plurality of support members for supporting each of the perforated tiles, wherein the one or more of the support members deliver a precursor gas to a region formed between the inductive coupler and the perforated tile.

[0008] In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles each coupled to one or more of a plurality of support members, a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles, and a plurality of inductive couplers, one of the plurality of inductive couplers corresponding to one of the plurality of dielectric plates, the support member delivering a precursor gas to a region formed between the inductive coupler and the perforated tile.

[0009] In another embodiment, a method of depositing a film on a substrate is disclosed that includes flowing precursor gases through multiple gas regions of a showerhead, each gas region including a perforated tile and an inductive coupler in electrical communication with the respective gas region, and varying the flow of precursor gas into each gas region.

[0010] In order that the above-mentioned features of the present disclosure may be understood in detail, the above-summarized disclosure will be more particularly described with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate exemplary embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may admit of other equally effective embodiments.

FIG. 2 illustrates a cross-sectional side view of an exemplary processing chamber according to an embodiment of the present disclosure. FIG. 2 is an enlarged view of a portion of the lid assembly of FIG. 1. FIG. 2 is a top view of one embodiment of a coil. FIG. 2 is a bottom view of one embodiment of a faceplate of a showerhead. FIG. 13 is a partial bottom view of another embodiment of a faceplate of a showerhead. FIG. 13 is a schematic bottom view illustrating another embodiment of flow control for the showerhead. FIG. 1 is a cross-sectional view of a support frame for a showerhead. FIG. 1 is a schematic cross-sectional view of one embodiment of an inlet that may be used with the showerheads described herein. FIG. 2 is a plan view of a perforated tile for a showerhead described herein. 7B is a schematic cross-sectional view showing one of the openings formed in the perforated tile of FIG. 7A.

[0021] To facilitate understanding, wherever possible, the same reference numbers have been used to designate identical elements common to the figures. It is believed that elements disclosed in one embodiment may be beneficially utilized in other embodiments without further recitation.

[0022] Embodiments of the present disclosure include a processing system operable to deposit multiple layers on a large area substrate. As used herein, a large area substrate is a substrate having a major side with a large surface area, such as a substrate having a surface area of about one square meter or more. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved, or other non-circular workpiece, such as, for example, a glass or polymer substrate used in the manufacture of flat panel displays.

[0023] In this document, the showerhead is configured to flow gas through the showerhead into the processing region of the chamber in multiple zones that are independently controlled to improve processing uniformity of the surface of the substrate exposed to the gas in the processing zone. Each zone is further configured with a plenum, one or more perforated plates between the plenum and the processing region of the chamber, and a coil or a portion of a coil dedicated to the zone or individual perforated plate. The plenum is formed between the dielectric window, the perforated plate, and the surrounding structure. Each plenum is configured to flow and distribute the processing gas(es) therein to provide a relatively uniform or possibly regulated flow rate through the perforated plate into the processing region. The plenum in some embodiments has a thickness less than twice the thickness of the dark space of the plasma formed from the processing gas(es) at the pressure of the processing gas in the plenum. In some embodiments, an inductive coupler in the form of a coil is positioned behind the dielectric window and inductively couples energy through the dielectric window, the plenum, and the perforated plate to impinge and support the plasma in the processing region. In addition, additional process gas flows are provided in the regions between adjacent perforated plates. The flow of the process gas(es) through each zone and the regions between the perforated plates is controlled to provide a uniform or regulated gas flow to obtain the desired process result on the substrate.

[0024] Embodiments of the present disclosure include a high density plasma chemical vapor deposition (HDP CVD) processing chamber operable to form one or more layers or films on a substrate. The processing chambers disclosed herein are adapted to deliver energized species of a precursor gas that are generated in a plasma. The plasma may be generated by inductively coupling energy to a gas under vacuum. The embodiments disclosed herein may be adapted for use in chambers available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, Calif. It is understood that the embodiments described herein may be implemented in chambers available from other manufacturers as well.

[0025] FIG. 1 is a cross-sectional side view of an exemplary processing chamber 100 according to one embodiment of the present disclosure. An exemplary substrate 102 is shown within a chamber body 104. The processing chamber 100 also includes a lid assembly 106 and a pedestal or substrate support assembly 108. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is disposed at least partially within the chamber body 104. The substrate support assembly 108 is coupled to a shaft 110. The shaft 110 is coupled to a driver 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. The substrate support assembly 108 of the processing chamber 100 shown in FIG. 1 is in a processing position. However, the substrate support assembly 108 may be lowered in the Z direction to a position adjacent a transfer port 114. Upon lowering, lift pins 116 movably disposed on the substrate support assembly 108 contact the bottom 118 of the chamber body 104. Once the lift pins 116 contact the bottom 118, they can no longer move downward with the substrate support assembly 108, maintaining the substrate 102 in a relatively fixed position as the substrate receiving surface 120 of the substrate support assembly 108 moves downward therefrom. An end effector or robot blade (not shown) is then inserted through the transfer port 114 between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.

[0026] The lid assembly 106 may include a backing plate 122 that rests on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers process gases from a gas source to a processing region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a cleaning gas source that provides a cleaning gas, such as a fluorine-containing gas, to the processing region 126.

[0027] The showerhead 124 also functions as a plasma source 128. To function as the plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components, or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or three or more coils 130, hereinafter simply referred to as coils 130. Each of the one or more coils 130 is coupled across a power source and ground 133. The showerhead 124 also includes a faceplate 132 that includes a plurality of discrete perforated tiles 134. The power source includes a matching circuit or tuning function for adjusting the electrical characteristics of the coils 130.

[0028] Each of the perforated tiles 134 is supported by a number of support members 136. Each of the one or more coils 130 or a portion of the one or more coils 130 is positioned on or above a respective dielectric plate 138. An example of a coil 130 disposed above a dielectric plate 138 in the lid assembly 106 is shown more clearly in FIG. 2A. A number of gas regions 140 are defined by the surfaces of the dielectric plate 138, the perforated tiles 134, and the support member 136. Each of the one or more coils 130 is configured to generate an electromagnetic field that energizes process gases in a plasma in the processing region 126 below the gas region 140 as the gas flows into the gas region 140 and through the adjacent perforated tiles into the chamber region below, and process gases from a gas source are supplied to each gas region 140 through conduits in the support member 136. The volume or flow rate of the gas(es) entering and exiting the showerhead is controlled at different zones of the showerhead 124. The zonal control of the process gases is provided by multiple flow controllers, such as mass flow controllers 142, 143, and 144 shown in FIG. 1. For example, the flow rate of gases to the peripheral or outer zones of the showerhead 124 is controlled by flow controllers 142, 143, and the flow rate of gases to the central zone of the showerhead 124 is controlled by flow controller 144. When cleaning of the chamber is required, cleaning gas from a cleaning gas source is flowed into each gas region 140 and then into the processing region 140, where the cleaning gas is excited into ions, radicals, or both. The excited cleaning gas flows through the perforated tile 134 into the processing region 126 to clean the chamber parts.

[0029] Figure 2A is an enlarged view of a portion of the lid assembly 106 of Figure 1. As explained above, precursor gases from a gas source are supplied to the gas regions 140 through inlets 200 formed through the backing plate 122. The inlets 200 are each coupled to a respective conduit 205 formed in the support member 136. The conduits 205 supply precursor gases to the gas regions 140 at outlet openings 210. Some of the conduits 205 supply gas to two adjacent gas regions 140 (one of the conduits 205 is shown in dashed lines in Figure 2A). The flow of gas into a representative gas region 140 is more clearly shown in Figure 4.

[0030] The conduit 205 includes flow restrictors 215 for controlling flow to the gas region 140. The size of the flow restrictors 215 can be varied to control the gas flow therethrough. For example, the flow restrictors 215 each include an orifice of a particular size (e.g., diameter) that is utilized to control the flow. Additionally, each dimension of the flow restrictors 215 can be altered to provide a larger orifice size or a smaller orifice size to control the flow therethrough, as needed.

2A, the perforated tile 134 includes a plurality of openings 218 extending therethrough. Each of the openings 218 is aligned (concentric) with an opening 220 formed in the cover plate 222. Each of the plurality of openings 218 and 220 allows gas to flow from the gas region 140 to the processing region 126 at a desired flow rate due to the diameter of the opening 218 extending between the gas region 140 and the cover plate 222. The openings 218 and/or 220 and/or the rows and columns of the openings 218 and/or 220 may be differently sized and/or spaced apart to equalize the gas flow through each perforated tile 134 and each cover plate 222. Alternatively, the gas flow from each opening 218 and/or 220 may be non-uniform, depending on the desired gas flow characteristics.

[0032] The cover plates 222 each include a mounting portion 225 that surrounds the sides of the perforated tiles 134. Each mounting portion 225 includes a number of openings 230 that allow gas to flow from the conduits 205 into the secondary plenum 235 and then into the processing region 126.

[0033] The support members 136 are coupled to the backing plate 122 by fasteners 240, such as bolts or screws. Each support member 136 supports a perforated tile 134 at an interface portion 245 of the cover plate 222. Each interface portion 245 may be a ledge or shelf that supports a portion of the perimeter or edge of the perforated tile 134. The interface portion 245 is fastened to the support member 136 by fasteners 250, such as bolts or screws. A portion of the interface portion 245 includes the secondary plenum 235. Each interface portion 245 also supports the perimeter or edge of the perforated tile 134. One or more seals 265 are used to seal the gas region 140. For example, the seals 265 are O-ring seals or elastomeric materials such as polytetrafluoroethylene (PTFE) joint sealant material. One or more seals 265 may be provided between the support member 136, the perforated tile 134, and the mounting portion 225 of the cover plate 222. The cover plate 222 is removable to replace one or more of the perforated tiles 134 as needed.

[0034] Additionally, each of the support members 136 utilizes a shelf 270 extending therefrom to support the dielectric plate 138 (shown in FIG. 2A). In the showerhead 124/plasma source 128 embodiment, the dielectric plate 138 has a smaller lateral surface area (X-Y plane) compared to the overall surface area of the showerhead 124/plasma source 128. The shelf 270 is utilized to support the dielectric plate 138. The reduced lateral surface area of the dielectric plates 138 allows the dielectric material to be used as a physical barrier between the vacuum environment and plasma in the gas region 140 and processing region 126 and the atmospheric environment in which the adjacent coil 130 is typically positioned without imposing significant stress thereon due to a large area supporting atmospheric pressure loads.

[0035] Seal 265 is used to seal region 275 (at atmospheric or subatmospheric pressure) from gas region 140 (at subatmospheric pressure in the submillitorr range during processing). Interface member 280 is shown extending from support member 136, and fasteners 285 are used to fasten or press dielectric plate 138 against seal 265 and shelf 270. Seal 265 may also be used to seal the space between the perimeter of perforated tile 134 and support member 136.

[0036] The showerhead 124/plasma source 128 materials are selected based on one or more of electrical properties, strength, and chemical stability. The coil 130 is made of a conductive material. The backing plate 122 and support member 136 are made of a material capable of supporting the weight of the supported components and atmospheric pressure loads, and may include metal or other similar materials. The backing plate 122 and support member 136 may be made of a non-magnetic material (e.g., non-ferromagnetic or non-ferromagnetic material), for example, an aluminum material. The cover plate 222 is also formed of a non-magnetic material, such as a metallic material such as aluminum. The perforated tiles 134 are made of a ceramic material such as quartz, alumina, or other similar material. The dielectric plate 138 is made of a quartz, alumina, or sapphire material.

2B is a top view of one embodiment of a coil 130 positioned on a dielectric plate 138 in the lid assembly 106. In one embodiment, using the coil 130 configuration shown in FIG. 2B, the illustrated coil configuration can be individually formed on each dielectric plate 138 such that each planar coil is serially connected in a desired pattern across the showerhead 124 with adjacently positioned coils 130. The coil 130 includes a conductor pattern 290 in the shape of a rectangular spiral. The electrical connections include an electrical input terminal 295A and an electrical output terminal 295B. The one or more coils 130 of the showerhead 124 are each connected in series and/or in parallel.

3A is a bottom view of one embodiment of faceplate 132 of showerhead 124. As discussed above, showerhead 124 is configured to include one or more zones with gas flow to each zone independently controlled. For example, faceplate 132 includes central zone 300A, middle zones _300B1 and _300B2 , and outer zones _300C1 and _300C2 .

[0039] The showerhead 124 includes a gas distribution manifold 305 that controls gas flow to each of the central zone 300A, the middle zones _300B1 and _300B2 , and the outer zones _300C1 and _300C2 . Gas flow to the zones is controlled by a number of flow controllers 310, which are flow controllers 142, 143, and 144 shown in Figure 1. Each of the flow controllers 310 may be a needle valve or a mass flow controller. The flow controllers 310 may also include diaphragm valves to start or stop the gas flow.

3B is a partial bottom view of another embodiment of the faceplate 132 of the showerhead 124. In this embodiment, the perforated tiles 134 are supported by a cover plate 222. Fasteners 250 are used to secure the perforated cover plate 222 to the support member 136, which are not shown in this view because they are behind the cover plate 222.

4 is a schematic bottom view of another embodiment of a showerhead 124 illustrating a gas flow injection pattern into a gas region 140 formed within the showerhead 124. The showerhead 124 is shown on its side with a substrate length 400 and width 405. Precursor flow into the gas region 140 can be unidirectional as indicated by arrow 410 or bidirectional as indicated by arrow 415. Precursor flow control can be provided by flow controllers 142, 143, and 144 (shown in FIG. 1). Additionally, gas flow zones such as edge zone 420, corner zone 425, and center zone 430 can be provided by flow controllers 142, 143, and 144 (shown in FIG. 1). The flow rate of precursors into each of the gas regions 140 and/or zones can be adjusted by varying the size of one or a combination of openings 220, openings 230, and flow restrictors 215 (all shown in FIG. 2A).

[0042] The flow rates to each gas region 140 may be the same or different. The flow rates to the gas regions 140 may be controlled by mass flow controllers 142, 143, and 144 shown in FIG. 1. The flow rates to the gas regions 140 may be further controlled by sizing of the flow restrictors 215, as described above. The flow rates to the processing region 126 may be controlled by the size of the openings 220 in the perforated tiles 134, as well as the size of the openings 230 in the cover plate 222. Bidirectional or unidirectional flow into the gas regions 140 may be used as needed to provide sufficient gas flow to the processing region 126.

[0043] Methods for controlling gas flow include: 1) multi-zone (center/edge/corner/any other zone) control using different flow rates from mass flow controllers 142, 143, 144; 2) flow rate control by different orifice sizes (size of flow restrictor 215); 3) flow direction control (unidirectional or bidirectional) into gas region 140; and 4) flow rate control by size of openings 220 in perforated tile 134, number of openings 220 in perforated tile 134, and/or location of openings 220 in perforated tile 134. The mass flow rates of gas delivered by showerhead 124 described herein improve non-uniformity percentage (NU%) by about 280% (e.g., from 57% non-uniformity (prior art) to about 15% non-uniformity).

[0044] FIG. 5 is a bottom cross-sectional view of a support frame 500 taken along the section line shown in FIG. 1. The support frame 500 is comprised of a plurality of support members 136. The support frame 500 in FIG. 5 is cut along a cross-section of the conduit 205 to reveal the various diameters (orifice sizes) of the flow restrictors 215. In one embodiment, the various orifices of each flow restrictor 215 can be altered or configured based on the desired gas flow characteristics.

[0045] Each of the flow restrictors 215 in this embodiment includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. The diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be different or the same. The diameters may be selected based on the desired flow characteristics of the showerhead 124. In one embodiment, the first diameter portion 505 here has a smallest diameter, the third diameter portion 515 here has a largest diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. In the illustrated embodiment, the plurality of flow restrictors 215 having the first diameter portion 505 are shown in a central portion of the support frame 500, and the plurality of flow restrictors 215 having the third diameter portion 515 are shown in an outer portion of the support frame 500.

[0046] Additionally, multiple flow restrictors 215 having second diameter portions 510 are shown in the intermediate zone between the central portion and the outer portion. In other embodiments, the locations of the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be reversed in the portions of the support frame 500 as shown in FIG. 5. Alternatively, the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be located in different portions of the support frame 500 depending on the desired characteristics and control through the gas regions 140. In some embodiments, a uniform gas flow throughout the showerhead 124 may be desired. However, in other embodiments, the gas flow to each gas region 140 of the showerhead 124 may not be uniform. The non-uniform gas flow may be due to some physical structure(s) and/or geometry of the processing chamber 100. For example, it may be desirable to have more gas flow in a portion of the showerhead 124 adjacent the transfer port 114 (shown in FIG. 1) compared to the gas flow in other portions of the showerhead 124.

[0047] Figure 6 is a schematic cross-sectional view of one embodiment of an inlet 200 that may be used with the showerhead 124 described herein. The inlet 200 includes a conduit 205 that includes a flow restrictor 215 as described in Figure 2A. In some embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a first size 605A of about 1.4 millimeters (mm) to about 1.6 mm. In other embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a second size 605B of about 1.9 mm to about 2.1 mm. The diameter 600 of the outlet opening 210 varies across a dimension (e.g., length/width) of the showerhead 124. For example, a flow restrictor 215 having a first size 605A may be used in the central zone 300A, as described in Figure 3A above. The flow restrictor 215 having the second size 605B may be used in zones of the showerhead 124 other than the central zone 300A (e.g., the middle zones _300B1 and _300B2 and the outer zones _300C1 and _300C2 ), as described above in FIG. 3A. Additionally, the flow restrictor 215 includes a length 610 that may vary within the showerhead 124. In some embodiments, the length 610 includes a first length 615A that may be from about 11 mm to about 12 mm. In other embodiments, the length 610 of the flow restrictor 215 includes a second length 615B that is from about 22 mm to about 24 mm. The flow restrictor 215 having the first length 615A may be used in the central zone 300A, as described above in FIG. 3A. The flow restrictor 215 having the second length 615B may be used in zones of the showerhead 124 other than the central zone 300A as described in FIG. 3A above (e.g., middle zones _300B1 and _300B2 , and outer zones _300C1 and _300C2 ). Note that the term "about" in connection with "size" and/or "length" as described above is ±0.01 mm.

7A and 7B are various views of one embodiment of a perforated tile 134 that may be used with the showerhead 124 described herein. FIG. 7A is a bottom view of a first side 700 of the perforated tile 134 that faces the cover plate 222 (shown in FIG. 2A). FIG. 7B is a schematic cross-sectional view of one of the openings 218 formed in the perforated tile 134.

[0049] The perforated tile 134 includes a body 705 made of a ceramic material, such as alumina ( _Al2O3 ). The body 705 includes a first side 700 and a second side 710 (shown in FIG. _7B ) opposite the first side 700. The first side 700 and the second side 710 are generally parallel. At least the second side 710 has a flatness (per engineering tolerances defined by Geometry, Dimensioning and Tolerancing (GD&T)) of about 0.005 inches or less. A periphery 720 of the body 705 includes a plurality of openings 218 formed between the first side 700 and the second side 710.

[0050] The first surface 700 includes a concave surface 715 that interfaces between the first surface 700 and the periphery 720 of the body 705. The concave surface 715 includes a transition region 725. The transition region 725 may be a sharp shoulder or bevel that begins at an edge of the first surface 700 and extends to the periphery 720 of the body 705. The transition region 725 includes rounded corners 730. The periphery 720 of the body 705 includes square corners 735.

[0051] One of the plurality of openings 218 is shown in FIG. 7B. The opening 218 includes an inlet hole or first hole 740 formed in the second surface 710. The opening 218 also includes an outlet hole or second hole 745 formed in the first surface 700. The first hole 740 and the second hole 745 are fluidly connected by a stepped hole 750. The first hole 740 and the second hole 745 each include a flared sidewall 755. The flared sidewall 755 may include an angle α of about 90 degrees (e.g., about 45 degrees from the plane of the surfaces 700 and 710).

[0052] The stepped bore 750 includes a first orifice 760 and a second orifice 765. The first orifice 760 includes a diameter 770 and the second orifice 765 includes a diameter 775. The diameter 775 is greater than the diameter 770. A flare section 780 is provided between the first orifice 760 and the second orifice 765. The flare section 780 includes an angle α of about 90 degrees. The diameter 770 may be about 0.017 inches to about 0.018 inches.

[0053] Embodiments of the present disclosure include methods and apparatus for showerheads and plasma deposition chambers having showerheads that can form one or more layers of a film on a large area substrate. Gas (or precursor) flow as well as plasma uniformity is controlled by a combination of configurations of individual perforated tiles 134, coils 130 dedicated to particular ones of the perforated tiles 134, and/or flow controllers 142, 143, 144, as well as varying the size and/or position of the flow restrictor 215.

[0054] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, as determined by the following claims.

Claims (11)

1. A plasma deposition chamber comprising:
a chamber body disposed about an interior region;
a substrate support within the interior region;
a showerhead disposed above the substrate support , the showerhead having a plurality of support members and a plurality of perforated tiles each coupled to one or more of the plurality of support members ;
a plurality of dielectric plates spaced apart above the plurality of perforated tiles ;
a plurality of inductive couplers disposed on each of the plurality of dielectric plates;
each of the plurality of support members includes a conduit configured to supply a precursor gas to a region formed between one of the dielectric plates and one of the perforated tiles, each of the conduits including a flow restrictor;
The plurality of support members includes a first support member and a second support member;
a flow restrictor for the conduit within the first support member having a first diameter;
the flow restrictor of the conduit within the second support member has a second diameter different from the first diameter;
Plasma deposition chamber. The chamber of claim 1, wherein the flow restrictor of the conduit in the first support member has a first length and the flow restrictor of the conduit in the second support member has a second length different from the first length. The chamber of claim 1, wherein the plurality of perforated tiles and the plurality of support members each include an interface portion. The chamber of claim 1, further comprising a cover plate positioned around each of the perforated tiles. The chamber of claim 4 , wherein the cover plate includes an opening formed therein. The chamber of claim 5 , wherein each perforated tile includes an opening that aligns with an opening formed in the cover plate. The chamber of claim 1, wherein the showerhead is divided into separate gas delivery zones including a central zone, an intermediate zone adjacent the central zone, and an outer zone adjacent the intermediate zone. 1. A showerhead for a plasma deposition chamber, comprising:
a plurality of support members including a first support member and a second support member , each support member including one or more first support surfaces and one or more second support surfaces, the plurality of first support surfaces being spaced apart from the plurality of second support surfaces;
A plurality of gas distribution assemblies including a plurality of perforated tiles and a plurality of dielectric plates, each of the plurality of gas distribution assemblies comprising:
a perforated tile disposed on a first support surface of the plurality of first support surfaces;
a plurality of gas supply assemblies including a dielectric plate disposed on a second support surface of the plurality of second support surfaces, a gas region being defined between a surface of the dielectric plate and a surface of the perforated tile;
a plurality of conduits including a first conduit in a first support member and a second conduit in a second support member , each conduit configured to supply a precursor gas to one of the gas regions of the plurality of gas supply assemblies, each of the conduits including a flow restrictor;
the flow restrictor of the first conduit has a first length;
the flow restrictor of the second conduit has a second length different from the first length;
A plurality of conduits;
a coil disposed on each of the plurality of gas delivery assemblies in the showerhead. 10. The showerhead of claim 8 , wherein the flow restrictor of the conduit in the first support member has a first diameter and the flow restrictor of the conduit in the second support member has a second diameter different than the first diameter. 10. The showerhead of claim 8 , wherein each of the plurality of perforated tiles and the support member includes an interface portion. 10. The showerhead of claim 8 , further comprising a cover plate positioned about each of the perforated tiles.

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