JP7295808B2 - アレイ基板、表示パネル及び表示装置 - Google Patents
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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Description
111 表示回路領域
112 駆動回路領域
121 リード線領域
122 ファンアウト領域
123 バインディング領域
124 ギャップ領域
131 第1ビアホール
132 第2ビアホール
Claims (19)
- アレイ基板であって、
積層された複数の導電層と、隣接する2層の導電層の間に設置され且つ第1ビアホールが設置されている層間絶縁層と、を含む回路領域と、
前記回路領域以外の領域に設置される境界領域と、を含み、
前記回路領域に近接する側の前記境界領域のプリセット範囲には、前記回路領域における第1ビアホールの均一性を向上するための第2ビアホールが設置され、
前記第2ビアホール及び前記第1ビアホールは、同一層の層間絶縁層に設置され、
前記回路領域は、隣接して設置される第1回路領域及び第2回路領域を含み、前記境界領域は、前記第1回路領域と前記第2回路領域との間のギャップ領域であり、
前記第1回路領域に近接する側の前記ギャップ領域のプリセット範囲と前記第2回路領域に近接する側の前記ギャップ領域のプリセット範囲には、それぞれ前記第2ビアホールが設置されている
ことを特徴とするアレイ基板。 - 前記回路領域における第1ビアホールの密度は、前記境界領域における第2ビアホールの密度と同一である
請求項1に記載のアレイ基板。 - 前記回路領域における第1ビアホールの形状と前記境界領域における第2ビアホールの形状は、同一であり、或いは異なる
請求項1に記載のアレイ基板。 - 前記境界領域における第2ビアホールの形状は、円形、ストリップ状及び矩形のうちのいずれか1つ又は複数である
請求項1又は3に記載のアレイ基板。 - 前記回路領域における第1ビアホールの分布は、前記境界領域における第2ビアホールの分布と同一である
請求項2に記載のアレイ基板。 - 前記回路領域は、表示回路領域、駆動回路領域及び静電気放電回路領域のうちのいずれか1つ又は複数を含む
請求項1に記載のアレイ基板。 - 前記境界領域は、リード線領域、ファンアウト領域及びバインディング領域のうちのいずれか1つ又は2つをさらに含む
請求項1に記載のアレイ基板。 - 前記回路領域は、複数の画素又はサブ画素を含み、
前記プリセット範囲の幅は、前記画素又はサブ画素の第1辺の幅より大きい
請求項1に記載のアレイ基板。 - 前記複数の導電層は、ソース/ドレイン金属層及びゲート金属層を含み、
前記層間絶縁層は、前記ソース/ドレイン金属層及び/又は前記ゲート金属層の上に設置される
請求項1に記載のアレイ基板。 - 請求項1から請求項9のいずれか1項に記載のアレイ基板を含む表示パネル。
- 前記表示パネルは、OLED表示パネルである
請求項10に記載の表示パネル。 - 請求項10又は11に記載の表示パネルを含む表示装置。
- アレイ基板の製造方法であって、
前記アレイ基板は、回路領域と、前記回路領域以外の領域に設置されている境界領域と、を含み、前記回路領域は、積層された複数の導電層と、隣接する2層の導電層の間に設置される層間絶縁層とを含み、前記回路領域は、隣接して設置される第1回路領域及び第2回路領域を含み、前記境界領域は、前記第1回路領域と前記第2回路領域との間のギャップ領域であり、
前記アレイ基板の製造方法は、
前記層間絶縁層に第1ビアホールを設置するステップと、
前記回路領域に近接する側の前記境界領域のプリセット範囲に、前記回路領域における第1ビアホールの均一性を向上するための第2ビアホールを設置するステップと、含み、
前記第2ビアホール及び前記第1ビアホールは、同一層の層間絶縁層に設置され、
前記第1回路領域に近接する側の前記ギャップ領域のプリセット範囲と前記第2回路領域に近接する側の前記ギャップ領域のプリセット範囲には、それぞれ前記第2ビアホールが設置されている
ことを特徴とするアレイ基板の製造方法。 - 前記回路領域における第1ビアホールの密度は、前記境界領域における第2ビアホールの密度と同一である
請求項13に記載のアレイ基板の製造方法。 - 前記回路領域における第1ビアホールの形状と前記境界領域における第2ビアホールの形状は、同一であり、或いは異なる
請求項13に記載のアレイ基板の製造方法。 - 前記境界領域における第2ビアホールの形状は、円形、ストリップ状及び矩形のうちのいずれか1つ又は複数である
請求項13又は15に記載のアレイ基板の製造方法。 - 前記回路領域における第1ビアホールの分布は、前記境界領域における第2ビアホールの分布と同一である
請求項14に記載のアレイ基板の製造方法。 - 前記回路領域は、表示回路領域、駆動回路領域及び静電気放電回路領域のうちのいずれか1つ又は複数を含む
請求項13に記載のアレイ基板の製造方法。 - 前記境界領域は、リード線領域、ファンアウト領域及びバインディング領域のうちのいずれか1つ又は2つをさらに含む
請求項13に記載のアレイ基板の製造方法。
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CN201820777664.2 | 2018-05-23 | ||
CN201820777664.2U CN208489194U (zh) | 2018-05-23 | 2018-05-23 | 阵列基板、显示面板及显示装置 |
PCT/CN2019/081587 WO2019223434A1 (zh) | 2018-05-23 | 2019-04-04 | 阵列基板、显示面板及显示装置 |
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CN111077707A (zh) * | 2019-12-18 | 2020-04-28 | Tcl华星光电技术有限公司 | 一种阵列基板和显示面板 |
CN111223439A (zh) * | 2020-03-12 | 2020-06-02 | 深圳市华星光电半导体显示技术有限公司 | 应用于阵列基板的goa电路、阵列基板及goa电路的制作方法 |
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KR20190134730A (ko) | 2019-12-04 |
EP3799127A4 (en) | 2023-04-12 |
CN208489194U (zh) | 2019-02-12 |
EP3799127A1 (en) | 2021-03-31 |
JP2021524047A (ja) | 2021-09-09 |
US20210167159A1 (en) | 2021-06-03 |
KR102341556B1 (ko) | 2021-12-22 |
WO2019223434A1 (zh) | 2019-11-28 |
US11398539B2 (en) | 2022-07-26 |
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