JP7022807B2 - Pattern forming method, lithography equipment, and article manufacturing method - Google Patents

Description

The present invention relates to a pattern forming method, a lithography apparatus, and an article manufacturing method.

In the lithography process for manufacturing electronic devices such as liquid crystal displays, a step-and-scan scanning type that performs exposure while synchronizing the original plate such as a mask and a substrate such as a glass plate with respect to the projection optical system. A projection exposure apparatus is used.

In recent years, particularly in liquid crystal display devices, the size of the substrate has increased, and in order to utilize the substrate without waste, a plurality of devices having different sizes are manufactured on one substrate. On the other hand, since the exposure area size is also increasing, it is difficult to create a plurality of patterns of different sizes on one original plate. Therefore, a device is manufactured using a plurality of original plates for one substrate, but in order to improve throughput, different original plate patterns are applied to one substrate using a plurality of exposure devices. Transferring is being done.

In addition, as a technology to improve the throughput of the exposure equipment, a mark measuring instrument independent of the exposure apparatus is prepared, and before measuring with the exposure apparatus, measurement is performed using an external measuring instrument in advance, and the measurement process of the exposure apparatus is performed. A method of omitting it has been proposed (Patent Document 1).

Japanese Unexamined Patent Publication No. 2001-247073

In a production line in which a pattern is transferred to one substrate using a plurality of exposure devices, the layout for transferring the pattern is different in each of the plurality of exposure devices, so that a difference in throughput occurs among the devices, and the production line of the production line. Productivity is rate-determined by the slowest equipment. Therefore, in order to improve the productivity of the production line, it is necessary to improve the throughput of the slowest processing device.

In the technique described in Patent Document 1, it is possible to improve the throughput of the exposure apparatus by shortening the mark measurement time, but since a measuring instrument different from the exposure apparatus is required, the installation area (foot). Invites an increase in print).

An object of the present invention is, for example, to provide a pattern forming method that is advantageous for achieving both a small footprint and a high throughput.

According to one aspect of the present invention, it is a pattern forming method for forming a pattern of an original plate on a substrate by using a lithography apparatus, and is a detection step for detecting a mark provided on the substrate, and another. The acquisition step of acquiring the mark position information indicating the detection result of the mark by the lithography apparatus, the detection result of the mark in the detection step, and the detection result of the mark by the other lithography apparatus acquired in the acquisition step. Based on the above, a pattern forming step for forming a pattern is provided, and in the pattern forming step, a pattern is formed so that the pattern formed by the other lithography apparatus and the pattern formed by the lithography apparatus do not overlap with each other. A pattern forming method, characterized in that the formation is performed, is provided.

According to the present invention, for example, it is possible to provide a pattern forming method that is advantageous for achieving both a small footprint and a high throughput.

The figure which shows the structure of the exposure apparatus which concerns on embodiment. The figure which shows the structure of the production line which concerns on embodiment. The figure which shows the example of the layout of the original plate and the substrate of the manufacturing process which concerns on embodiment. The flowchart which shows the exposure method by the 1st exposure apparatus. The figure which shows the configuration of the alignment detection part and the off-axis detection part of the 1st exposure apparatus, and the example of the measurement mark arranged on the original plate and a substrate. The figure which shows the correction component of a shot. The flowchart which shows the exposure method by the 2nd exposure apparatus. The figure which shows the alignment detection part of the 2nd exposure apparatus and the example of the measurement mark arranged on the original plate and a substrate. The flowchart which shows the exposure method by the 2nd exposure apparatus which concerns on the modification. The figure which shows the structure of the alignment detection part of the 2nd exposure apparatus and the example of the measurement mark arranged on the original plate and a substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the following embodiments merely show specific examples of the embodiment of the present invention, and the present invention is not limited to the following embodiments. In addition, not all combinations of features described in the following embodiments are essential for solving the problems of the present invention.

The present invention relates to a lithography apparatus that forms a pattern on a substrate. Examples of the lithography device include an exposure device that transfers a pattern of an original plate to a substrate via a projection optical system, an imprint device that forms a pattern on an imprint material on a substrate using a mold, and the like. In the following embodiment, the exposure apparatus will be described as an example of the lithography apparatus, but it can be applied to the exposure apparatus and the imprint apparatus. FIG. 1 is a schematic configuration diagram of an exposure apparatus which is an example of a lithography apparatus according to the present embodiment.

In FIG. 1, the exposure apparatus 100 is a step-and-scan exposure apparatus that transfers a pattern of an original plate 3 to each of a plurality of shot regions on a substrate 6 via a projection optical system 5. The exposure device 100 may include, for example, an illumination optical system 1, an alignment detection unit 2, an original plate stage 4, a projection optical system 5, an off-axis detection unit 8, a substrate stage 7, and a control unit 9. The control unit 9 has, for example, a CPU and a memory, and controls each unit of the exposure apparatus 100.

The light emitted from the light source (not shown) is incident on the illumination optical system 1 and forms, for example, an arc-shaped exposure region on the original plate 3 (for example, a mask). The original plate 3 and the substrate 6 (for example, a glass plate) are held by the original plate stage 4 and the substrate stage 7, respectively, and have positions substantially conjugated to the optical system via the projection optical system 5 (object surface and image of the projection optical system 5). Placed on the surface). The projection optical system 5 is, for example, a mirror projection type projection optical system composed of a plurality of mirrors, has a predetermined projection magnification (for example, 1x or 1/2x), and has a pattern formed on the original plate 3. Is projected onto the substrate 6. The original plate stage 4 and the substrate stage 7 scan at a speed ratio corresponding to the projection magnification of the projection optical system 5 while synchronizing with each other in a direction orthogonal to the optical axis direction (Z direction) of the projection optical system 5. As a result, the pattern formed on the original plate 3 can be transferred to the shot region on the substrate 6. Then, by sequentially repeating such scanning exposure for each of the plurality of shot regions on the substrate 6 while moving the substrate stage 7 in steps, the exposure process on one substrate 6 can be completed.

When the pattern of the original plate 3 is transferred to each shot region on the substrate 6, the region of the original plate 3 on which the pattern is formed and the shot region are aligned (aligned). The exposure apparatus 100 of the present embodiment detects a plurality of measurement marks provided in each shot region by using the alignment detection unit 2 and the off-axis detection unit 8 in combination. The alignment detection unit 2 simultaneously observes the measurement mark of the original plate 3 and the measurement mark of the substrate 6 via the original plate 3 and the projection optical system 5. The off-axis detection unit 8 directly observes the measurement mark on the substrate 6 without going through the original plate 3. Then, the control unit 9 calculates the correction amount for each shot using the results detected by the alignment detection unit 2 and the off-axis detection unit 8. Further, the control unit 9 calculates the driving amount of the substrate stage 7 at the time of scanning exposure and the driving amount of the optical element in the projection optical system 5 from the calculated correction amount for each shot, and the substrate stage 7 and the projection at the time of scanning exposure. Exposure is performed while controlling the optical system 5.

Next, the production line (lithographic system) in this embodiment will be described. In this production line, patterns of a plurality of different original plates are sequentially transferred to different positions on one substrate 6 by using a plurality of exposure devices (a plurality of lithography devices). FIG. 2 is a schematic configuration diagram of a production line according to the present embodiment. In FIG. 2, the production lines are, for example, two adjacent first exposure apparatus 100a (first lithography apparatus) and second exposure apparatus 100b (second exposure apparatus 100b), each of which has the same configuration as the exposure apparatus 100 shown in FIG. Lithography equipment) can be included. Further, the production line may include a first transport unit 11a and a second transport unit 11b for transporting substrates, and a substrate stocker 12 capable of storing one or more substrates. The first transport unit 11a transports the substrate between the substrate stocker 12 and the first exposure device 100a, and the second transport unit 11b transports the substrate between the substrate stocker 12 and the second exposure device 100b. conduct. The production line may further include a buffer device 10. The buffer device 10 has, for example, an HDD or SSD, is connected to the control unit 9 of the first exposure device 100a and the second exposure device 100b, and stores various data of the first exposure device 100a and the second exposure device 100b. do. In FIG. 2, the buffer device 10 is shown as an independent device between the first exposure device 100a and the second exposure device 100b, but the function of the buffer device 10 is the first exposure device 100a or the second exposure device. It may be realized by the storage device in the control unit 9 of 100b. Alternatively, the function of the buffer device 10 is an integrated control unit (not shown) that comprehensively controls the operation of the production line, or an external server device connected to the first exposure device 100a and the second exposure device 100b via a network. It may be realized by such as.

The first transport unit 11a is located in front of the interface opening of the first exposure device 100a, and carries the substrate 6 into the substrate stage 7 of the first exposure device 100a. Further, the first transport unit 11a carries out the substrate 6 processed by the first exposure apparatus 100a from the substrate stage 7 of the first exposure apparatus 100a and stores it in the substrate stocker 12. The second transport unit 11b takes out the substrate 6 from the substrate stocker 12, carries it into the substrate stage 7 of the second exposure apparatus 100b, processes it by the second exposure apparatus 100b, and then transfers the substrate 6 to the substrate stage of the second exposure apparatus 100b. Carry out from 7.

FIG. 3 is a schematic layout diagram of the original plate 3 and the substrate 6 in the manufacturing process in the present embodiment. The first exposure apparatus 100a sequentially transfers the pattern A of the first original plate 3a shown in (a) to each of the specific plurality of shot regions 61 and 62 on the substrate 6 shown in (c). Next, the second exposure apparatus 100b is different from the shot region in which the pattern B of the second original plate 3b shown in (b) is exposed by the first exposure apparatus 100a on the substrate 6 shown in (c). It is sequentially transferred to each of a plurality of specific shot regions 63, 64, 65, 66.

<Exposure processing by the first exposure device>
Hereinafter, the exposure process by the first exposure apparatus 100a will be described with reference to FIGS. 4 and 5. FIG. 4 is a flowchart of an exposure method by the first exposure apparatus 100a. Further, FIG. 5 is a diagram showing an example of the configuration of the alignment detection unit 2 and the off-axis detection unit 8 of the first exposure apparatus 100a and the measurement marks arranged on the first original plate 3a and the substrate 6. As shown in FIG. 5B, a pair of measurement marks 32a and 35a (hereinafter referred to as "original plate side marks") are arranged on the first original plate 3a so as to sandwich the pattern portion in the X direction. .. Correspondingly, the alignment detection unit 2 includes two systems of alignment detection units 21 and 22 for detecting a pair of original plate side marks 32a and 35a, as shown in FIG. 5A. Further, as shown in FIG. 5 (c), the plurality of shot regions of the substrate 6 are a part of the shot regions where the pattern is planned to be formed by using the first original plate 3a in the first exposure apparatus 100a. Includes 61 and 62. A plurality of measurement marks (marks on the first substrate side) indicated by 611 to 626 are arranged for some of the shot areas 61 and 62. Further, the plurality of shot regions of the substrate 6 include some shot regions 63, 64, 65, 66 for which pattern formation is planned to be performed using the second original plate 3b in the second exposure apparatus 100b. With respect to the shot areas 63 to 66, a plurality of measurement marks (marks on the second substrate side) indicated by 631 to 656 are arranged. Correspondingly, as shown in FIG. 5C, the off-axis detection unit 8 has six systems of off-axis detection units 81, 82, 83, 84, 85, which detect the substrate side marks 611 to 656. Contains 86.

In S101, the control unit 9 of the first exposure apparatus 100a controls the first transport unit 11a to mount the substrate 6 on the substrate stage 7.
In S102, the control unit 9 controls the substrate stage 7 and the original plate stage 4 so that the original plate side marks 32a and 35a and the substrate side marks 612 and 615 of the shot region 61 are detected by the alignment detection units 21 and 22. ..
In S103, the control unit 9 causes the alignment detection units 21 and 22 to detect the mark, and obtains the position of the first substrate side mark 612 and 615 (reference mark) with respect to the first original plate 3a. The results are (Ax ₆₁₂ , Ay ₆₁₂ ) and (Ax ₆₁₅ , Ay ₆₁₅ ).

In S104, the control unit 9 detects the substrate side mark (for example, the first substrate side mark 611, 614) for measurement by the off-axis detection units 81 and 82 shown in FIG. 5 (c). The board stage 7 is controlled.
In S105, the control unit 9 causes the off-axis detection units 81 and 82 to measure the board-side marks, respectively, and obtains the positions of the board-side marks. The result is expressed as (Ox _6ij , Oy _6ij ) (i = 1 to 2, j = 1 to 6).
In S106, the control unit 9 determines whether or not all the marks of the shot areas 61 and 62 processed by the first exposure apparatus 100a have been measured, and if the measurement has not been completed, the unmeasured marks are measured in S104. And the measurement in S105 is repeated. When the measurement of all the marks is completed, the process proceeds to S107. As described above, in S104 to S106, a plurality of first substrate side marks arranged for a part of the shot region where the pattern formation is planned to be performed by the first exposure apparatus 100a using the first original plate 3a. The first step of detection is carried out.

In S107, the control unit 9 detects the substrate side mark (for example, the substrate side mark 631,634, 641,644) for measurement by the off-axis detection unit 83, 84, 85, 86, so that the substrate stage 7 To control.
In S108, the control unit 9 causes the off-axis detection units 83, 84, 85, and 86 to measure the substrate side mark, respectively, and obtains the position of the substrate side mark. The result is (Ox _6ij , Oy _6ij ) (i = 3 to 6, j = 1 to 6).
In S109, it is determined whether or not all the marks of the shot areas 63, 64, 65, 66 that are not exposed by the first exposure apparatus 100a have been measured, and if the measurement has not been completed, the unmeasured marks have not been measured. The measurement in S107 and S108 is repeated. When the measurement of all the marks is completed, the process proceeds to S110. As described above, in S107 to S109, a plurality of second shot regions arranged with respect to other shot regions different from the shot regions scheduled to form a pattern using the second original plate 3b in the second exposure apparatus 100b. The second step of detecting the mark on the substrate side is carried out.

In S110, a third step of outputting the information of the detection result of the mark on the second substrate side acquired in S108 so that it can be used by the second exposure apparatus 100b, which is another lithography apparatus, is carried out. For example, the control unit 9 stores the result measured in S108 in the buffer device 10.
In S111, the control unit 9 calculates the correction amount at the time of exposure. The correction amount is calculated as follows. For example, the control unit 9 obtains the position of the substrate side mark with respect to the first original plate 3a based on the measurement result by the alignment detection unit in S103 and the measurement result by the off-axis detection unit in S105. Assuming that the position of the substrate side mark with respect to the first original plate 3a is (x _6ij , y _6ij ), the position of the substrate side mark with respect to the first original plate 3a can be obtained by the equations (1) and (2).

When j ≤ 3,
(X _6ij , y _6ij ) = (Ox _6ij + Ax ₆₁₂ --Ox ₆₁₂ , Oy _6ij + Ay ₆₁₂ --Oy ₆₁₂ ) (1)
When j> 3,
(X _6ij , y _6ij ) = (Ox _6ij + Ax ₆₁₅ --Ox ₆₁₅ , Oy _6ij + Ay ₆₁₅ --Oy ₆₁₅ ) (2)

Based on the values obtained by the formulas (1) and (2), the correction components of the shots shown in FIGS. 6A to 6D are obtained by the formulas (3) to (14).

DR1 = (x _{6i1 --x 6i4} ) ÷ 2 (3)
DR2 = (x _{6i2 --x 6i5} ) ÷ 2 (4)
DR3 = (x _{6i3 --x 6i6} ) ÷ 2 (5)
MX1 = (x _{6i1 --x 6i4} ) (6)
MX2 = (x _{6i2 --x 6i5} ) (7)
MX3 = (x _{6i3 --x 6i6} ) (8)
MY1 = (y _{6i1 --y 6i4} ) ÷ 2 (9)
MY2 = (y _{6i2 --y 6i5} ) ÷ 2 (10)
MY3 = (y _{6i3 --y 6i6} ) ÷ 2 (11)
Yaw1 = (y _{6i1 --y 6i4} ) (12)
Yaw2 = (y _{6i2 --y 6i5} ) (13)
Yaw3 = (y _{6i3 --y 6i6} ) (14)

The driving amount of the substrate stage 7 at the time of exposure is calculated based on the values obtained by the formulas (3) to (14). Assuming that the position when the substrate stage 7 is subjected to scanning exposure in the Y direction is Y _s , the driving amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 is obtained by the equations (15) to (20).

When Ys ≧ Y _6i2 ,
X _comp = (DR1 --DR2) ÷ (Y _{6i1 --Y 6i2} ) × (Y _s --Y6i2) + DR2 (15)
Y _comp = (MY1 --MY2) ÷ (Y _{6i1 --Y 6i2} ) × (Y _{s --Y 6i2} ) + MY2 (16)
θ _comp = (Yaw1 --Yaw2) ÷ (Y _{6i1 --Y 6i2} ) × (Y _{s --Y 6i2} ) + Yaw2 (17)
When Ys <Y6i2
X _comp = (DR3 --DR2) ÷ (Y _{6i3 --Y 6i2} ) × (Y _{s --Y 6i2} ) + DR2 (18)
Y _comp = (MY3 --MY2) ÷ (Y _{6i3 --Y 6i2} ) × (Y _{s --Y 6i2} ) + MY2 (19)
θ _comp = (Yaw3 --Yaw2) ÷ (Y _{6i3 --Y 6i2} ) × (Y _{s --Y 6i2} ) + Yaw2 (20)

The driving amount of the optical element in the projection optical system is calculated based on the values obtained by the equations (3) to (14). Assuming that the position when the substrate stage 7 scans in the Y direction is Y _s , the driving amount O _comp of the optical element can be obtained by the equations (21) and (22).

When Y _s ≧ Y _6i2 ,
O _comp = (MX1 --MX2) ÷ (Y _{6i1 --Y 6i2} ) × (Y _{s --Y 6i2} ) + MX2 (21)
When Y _s <Y _6i2 ,
O _comp = (MX3 --MX2) ÷ (Y _{6i3 --Y 6i2} ) × (Y _{s --Y 6i2} ) + MX2 (22)

In S112, the control unit 9 synchronizes the original stage 4 and the substrate stage 7 based on the driving amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 obtained in S111 and the driving amount O _comp of the optical element. Scan exposure is performed.
In S113, the control unit 9 confirms whether all the shot regions 61 and 62 to be processed by the first exposure apparatus 100a have been exposed. If there is an unexposed shot, the control unit 9 repeats S111 and S112 for the unexposed shot. As described above, in S111 to S113, the fourth step of performing the exposure process (pattern formation) while aligning the shot regions 61 and 62 with the first original plate 3a based on the detection result of the first substrate side mark is performed. Will be implemented. When the exposure process for the substrate 6 is completed in this way, the control unit 9 controls the first transport unit 11a to carry out the processed substrate 6 from the substrate stage 7 and store it in the substrate stocker 12.

As described above, according to the present embodiment, the first exposure apparatus 100a measures the mark of the shot region processed by the first exposure apparatus 100a and preliminarily marks the shot region not processed by the first exposure apparatus 100a. To measure. The shot region not processed by the first exposure apparatus 100a is, for example, a shot region to be processed by the second exposure apparatus 100b, and the first exposure apparatus 100a takes over the mark measurement of the shot region of the second exposure apparatus 100b. As a result, in the process of manufacturing using a plurality of exposure devices, a part of the exposure device processing to be processed later can be advanced, and the throughput of the exposure device to be processed later can be improved.

In the above embodiment, the first step (S104 to S106) for measuring the substrate-side marks of the shot regions 61 and 62 processed by the first exposure apparatus 100a is carried out. After that, a second step (S107 to S109) of measuring the substrate-side marks of the shot regions 63 to 66 not processed by the first exposure apparatus 100a was carried out. However, the order of implementation of the first step and the second step may be interchanged. For example, the second step may be carried out first, and then the first step may be carried out. Further, for example, the first step and the second step may be carried out in order so that the driving amount of the substrate stage 7 is minimized. Further, if the substrate-side marks of the shot regions 61 and 62 processed by the first exposure apparatus 100a and the substrate-side marks of the shot regions 63 to 66 not processed by the first exposure apparatus 100a can be simultaneously detected by the off-axis detection unit 8. , May be detected at the same time.

Further, in the present embodiment, all of the substrate side marks of the shot regions 63 to 66 not processed by the first exposure apparatus 100a are measured in S107 to S109, but it is not always necessary to measure all of them, and some of the substrate sides are measured. Only the mark may be measured.

<Exposure processing by the second exposure device>
Next, the exposure process in the second exposure apparatus 100b will be described with reference to FIGS. 7 and 8. FIG. 7 is a flowchart of an exposure method by the second exposure apparatus 100b. Further, FIG. 8 is a diagram showing an example of the configuration of the alignment detection unit 2 of the second exposure apparatus 100b and the measurement marks arranged on the second original plate 3b and the substrate 6. As shown in FIG. 8B, a pair of measurement marks 32b and 35b (original plate side marks) are arranged on the second original plate 3b so as to sandwich the pattern portion in the X direction. Correspondingly, the alignment detection unit 2 includes two systems of alignment detection units 21 and 22 for detecting the original plate side marks 32b and 35b, as shown in FIG. 8A. The substrate 6 may have a plurality of substrate-side marks similar to those shown in FIG. 5 (c), but here, the substrate-side marks 632 of the shot region 63, as shown in FIG. 8 (c) in particular. , 635 are used.

In S201, the control unit 9 of the second exposure apparatus 100b controls the second transport unit 11b to take out the substrate 6 processed by the first exposure apparatus 100a from the substrate stocker 12, and the substrate stage of the second exposure apparatus 100b. It is carried into 7, and the substrate 6 is mounted on the substrate stage 7.
In S202, the control unit 9 sets the substrate stage 7 and the original plate stage 4 so that the substrate side marks 632 and 635 and the original plate side marks 32b and 35b of the shot region 63 to be measured are detected by the alignment detection units 21 and 22. Control.
In S203, the control unit 9 causes the alignment detection units 21 and 22 to measure the mark, and obtains the position of the substrate side mark 632 and 635 with respect to the second original plate 3b. The results are (Ax ₆₃₂ , Ay ₆₃₂ ) and (Ax ₆₃₅ , Ay ₆₃₅ ).

In S204, the control unit 9 reads out the result measured by the first exposure device 100a (the measurement result stored in S110) from the buffer device 10. The read result is (Ox _6ij , Oy _6ij ) (i = 3 to 6, j = 1 to 6).

In S205, the control unit 9 calculates the correction amount at the time of exposure. The correction amount is calculated as follows. For example, the control unit 9 has a substrate-side mark for the second original plate 3b based on the measurement result of the substrate-side mark 632 and 635 shown in FIG. 8C in S203 and the measurement result read out in S204. Find the position of. Assuming that the position of the substrate side mark with respect to the second original plate 3b is (x _6ij , y _6ij ), the position of the substrate side mark with respect to the second original plate 3b can be obtained by the equations (23) and (24).

When j ≤ 3,
(X _6ij , y _6ij ) = (Ox _6ij + Ax ₆₃₂ --Ox ₆₃₂ , Oy _6ij + Ay ₆₃₂ --Oy ₆₃₂ ) (23)
When j> 3,
(X _6ij , y _6ij ) = (Ox _6ij + Ax ₆₃₅ --Ox ₆₃₅ , Oy _6ij + Ay ₆₃₅ --Oy ₆₃₅ ) (24)

The control unit 9 obtains the correction component of the shot shown in FIGS. 6 (a) to 6 (d) based on the values obtained by the equations (23) and (24). Subsequent calculations are carried out in the same manner as in equations (3) to (22) in S111, and the driving amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 and the driving amount O _comp of the optical element are obtained.

In S206, the control unit 9 synchronizes the original stage 4 and the substrate stage 7 based on the drive amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 obtained in S205 and the drive amount O _comp of the optical element. Perform scanning exposure.
In S207, the control unit 9 confirms whether all the shot regions 63, 64, 65, 66 to be processed by the second exposure apparatus 100b have been exposed. If there is an unexposed shot, the control unit 9 repeats S205 and S206 for the unexposed shot.

As described above, according to the present embodiment, the second exposure apparatus 100b uses the result of preliminarily measuring the mark of the shot region processed by the second exposure apparatus 100b in the first exposure apparatus 100a to perform the second exposure. The shot area to be processed by the device 100b is aligned. The second exposure apparatus 100b measures, for example, only the substrate side marks 632 and 635 as reference marks using the alignment detection unit 2, and corrects the other substrate side marks based on the measurement results of the reference marks. Find the position of. As described above, by omitting a part of the mark measurement, the throughput of the second exposure apparatus 100b can be improved in the process of manufacturing using a plurality of exposure apparatus. Moreover, it is not necessary to provide a dedicated measurement station. Therefore, it is possible to achieve both a small footprint and a high throughput.

In the present embodiment, since the first exposure apparatus 100a and the second exposure apparatus 100b are exposure apparatus having the same configuration, the functions of both can be interchanged with each other. Of the plurality of exposure devices, which exposure device functions as the first exposure device 100a and which exposure device functions as the second exposure device 100b is specified, for example, in the exposure recipe managed by the control unit 9. ..

<Modification example of exposure processing by the second exposure device>
A modification of the exposure process by the second exposure apparatus 100b will be described with reference to FIGS. 9 and 10. FIG. 9 is a flowchart of the exposure process by the second exposure apparatus 100b. Further, FIG. 10 is a diagram showing an example of the configuration of the alignment detection unit 2 of the second exposure apparatus 100b and the measurement marks arranged on the second original plate 3b and the substrate 6. Comparing the flows of FIGS. 9 and 7, S308, S309, and S310 of FIG. 9 are processes not shown in FIG. 7.

In S301, the control unit 9 of the second exposure apparatus 100b controls the second transport unit 11b to take out the substrate 6 processed by the first exposure apparatus 100a from the substrate stocker 12, and the substrate stage of the second exposure apparatus 100b. It is carried into 7, and the substrate 6 is mounted on the substrate stage 7.
In S302, the control unit 9 sets the substrate stage 7 and the original plate stage 4 so that the substrate side marks 632 and 635 and the original plate side marks 32b and 35b of the shot region 63 to be measured are detected by the alignment detection units 21 and 22. Control.
In S303, the control unit 9 causes the alignment detection units 21 and 22 to measure the mark, and obtains the position of the substrate side mark 632 and 635 with respect to the second original plate 3b. The results are (Ax ₆₃₂ , Ay ₆₃₂ ) and (Ax ₆₃₅ , Ay ₆₃₅ ).

In S304, the control unit 9 reads out the result measured by the first exposure device 100a (the measurement result stored in S110) from the buffer device 10. The read result is (Ox _6ij , Oy _6ij ) (i = 3 to 6, j = 1 to 6).

In S308, in the control unit 9, the substrate-side marks 652,655 and the original plate-side marks 32b and 35b of the shot region 65 to be measured are detected by the alignment detection units 21 and 22 shown in FIG. 10A. The substrate stage 7 and the original plate stage 4 are controlled in this way.

In S309, the control unit 9 causes the alignment detection units 21 and 22 to measure the mark, and obtains the position of the mark on the substrate side with respect to the second original plate 3b. The results are (Ax ₆₅₂ , Ay ₆₅₂ ) and (Ax ₆₅₅ , Ay ₆₅₅ ).

In S310, the control unit 9 calculates the correction amount at the time of exposure. The correction amount is calculated as follows. For example, the control unit 9 is the second original plate based on the measurement results (S303, S309) of the substrate side marks 632, 635 and 652, 655 shown in FIG. 10 (c) and the read measurement results in S304. The position of the mark on the substrate side with respect to 3b is obtained. Here, for example, there is a possibility that the current magnification of the substrate 6 and the magnification of the substrate 6 when measured in advance have changed due to a change in the temperature of the substrate 6. Therefore, the control unit 9 obtains a change in the substrate magnification based on the results (S303, S309 and S304) of measuring the substrate side marks shown in FIG. 10 (c). Assuming that the substrate magnification change is (MagX _6ij , MagY _6ij ), the substrate magnification change can be obtained by the equations (25) and (26). In addition, (Dx _6ik , Dy _6ik ) (i = 3 to 6, k = 1 to 3) is the center position of the two measurement marks of each shot from the center position of the two measurement marks of the measurement shot (63) of S303. Signed distance to.

MagX _6ik = (Ax ₆₅₂ + Ax ₆₅₅ ) ÷ ((Ox ₆₅₂ + Ax ₆₃₂ --Ox ₆₃₂ ) + (Ox ₆₅₅ + Ax ₆₃₅ --Ox ₆₃₅ )) × Dx _6ik ÷ Dx ₆₅₂ (25)
MagY _6ik = (Ay ₆₅₂ + Ay ₆₅₅ ) ÷ ((Oy ₆₅₂ + Ay ₆₃₂ --Oy ₆₃₂ ) + (Oy ₆₅₅ + Ay ₆₃₅ --Oy ₆₃₅ )) × Dy _6ik ÷ Dy ₆₅₂ (26)

The control unit 9 calculates the position of the mark on the substrate side with respect to the second original plate 3b based on the equations (25) and (26). Assuming that the position of the mark on the substrate side with respect to the second original plate 3b is (x _6ij , y _6ij ), the position of the mark on the substrate side with respect to the second original plate 3b corrected for the change in the magnification of the substrate is obtained by the equations (27) and (28).

When j ≤ 3,
(X _6ij , y _6ij ) = ((Ox _6ij + Ax ₆₃₂ --Ox ₆₃₂ ) × MagX _6ij , (Oy _6ij + Ay ₆₃₂ --Oy ₆₃₂ ) × MagY _6ij ) (27)
When j> 3,
(X _6ij , y _6ij ) = ((Ox _6ij + Ax ₆₃₅ --Ox ₆₃₅ ) x MagX _{6i (j-3)} , (Oy _6ij + Ay ₆₃₅ --Oy ₆₃₅ ) x MagY _{6i (j-3)} ) (28)

The control unit 9 obtains the correction component of the shot shown in FIGS. 6 (a) to 6 (d) based on the values obtained by the equations (27) and (28). Subsequent calculations are carried out in the same manner as in equations (3) to (22) in S110, and the driving amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 and the driving amount O _comp of the optical element are obtained.

In S306, the control unit 9 synchronizes the original stage 4 and the substrate stage 7 based on the driving amount (X _comp , Y _comp , θ _comp ) of the substrate stage 7 obtained in S310 and the driving amount O _comp of the optical element. Perform scan exposure.
In S307, the control unit 9 confirms whether all the shot regions 63, 64, 65, 66 to be processed by the second exposure apparatus 100b have been exposed. If there is an unexposed shot, the control unit 9 repeats S310 and S306 for the unexposed shot.

As described above, according to this modification, the second exposure apparatus 110b measures the mark of the shot region processed by the second exposure apparatus 110b at at least two points. Therefore, it becomes possible to calculate the current magnification of the substrate 6, and it is possible to correct the change in the magnification of the substrate 6 from the position result of the mark on the substrate side measured in advance. As a result, it is possible to prevent a decrease in superposition accuracy due to omission of a part of the measurement of the mark in the shot region processed by the second exposure apparatus 110b.

<Embodiment of article manufacturing method>
The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure, for example. The article manufacturing method of the present embodiment includes a step of forming a latent image pattern on a photosensitive agent applied to a substrate by using the above-mentioned pattern forming method or a lithography device (a step of exposing a substrate), and a latent image pattern in such a step. Includes a step of processing (developing) the substrate on which the above is formed. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, flattening, etching, resist peeling, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

(Other embodiments)
The present invention supplies a program that realizes one or more functions of the above-described embodiment to a system or device via a network or storage medium, and one or more processors in the computer of the system or device reads and executes the program. It can also be realized by the processing to be performed. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

100a: 1st exposure device, 100b: 2nd exposure device, 10: buffer device, 11a: 1st transfer unit, 11b: 2nd transfer unit, 12: substrate stocker

Claims (11)

It is a pattern forming method for forming a pattern of an original plate on a substrate by using a lithography device.
A detection step for detecting a mark provided on the substrate and
An acquisition process for acquiring mark position information indicating the detection result of the mark by another lithography apparatus, and
A pattern forming step of forming a pattern based on the detection result of the mark in the detection step and the detection result of the mark by the other lithography apparatus acquired in the acquisition step.
Have,
A pattern forming method, characterized in that , in the pattern forming step, a pattern is formed so that a pattern formed by the other lithography apparatus and a pattern formed by the lithography apparatus do not overlap with each other. A pattern forming method for forming a pattern of a first original plate and a pattern of a second original plate different from the first original plate on a substrate by using a plurality of lithography devices including a first lithography device and a second lithography device. And
In the first lithography apparatus
The process of detecting the mark provided on the substrate and
A process of outputting information indicating the detection result of the mark so that it can be used by the second lithography apparatus, and a process of outputting the information.
Have,
In the second lithography apparatus
The detection process for detecting the mark and
An acquisition step of acquiring information indicating the detection result of the mark output from the first lithography apparatus, and
A pattern forming step of forming a pattern based on the detection result of the mark in the detection step and the detection result of the mark by the first lithography apparatus acquired in the acquisition step.
Have,
A pattern forming method, characterized in that , in the pattern forming step, a pattern is formed so that the pattern formed by the first lithography apparatus and the pattern formed by the second lithography apparatus do not overlap . A lithography device that forms a pattern on a substrate to form an original pattern.
A detection unit that detects marks provided on the substrate, and
A control unit that controls pattern formation based on the detection result of the detection unit,
Have,
The control unit
The mark position information indicating the detection result of the mark by another lithography device is acquired, and the mark position information is acquired.
Based on the detection result of the mark by the detection unit and the detection result of the mark by the other lithography apparatus, the pattern formed by the other lithography apparatus and the pattern formed by the lithography apparatus do not overlap with each other. , Perform pattern formation,
A lithographic device characterized by that. It is a pattern forming method for forming a pattern of an original plate on a substrate by using a lithography device.
A first substrate-side mark provided for alignment with an original plate in at least one shot region scheduled to be patterned by the lithography apparatus among a plurality of shot regions of the substrate is detected. 1 step and
A second substrate-side mark provided for alignment with the original plate in at least one shot region where pattern formation is planned to be performed by another lithography apparatus among the plurality of shot regions is detected. Process and
The third step of outputting the information of the detection result of the mark on the second substrate side so that it can be used by the other lithography apparatus, and
Based on the detection result of the mark on the first substrate side, the fourth step of aligning the shot region of the substrate with the original plate to form a pattern, and
A pattern forming method characterized by having. It is a pattern forming method for forming a pattern of an original plate on a substrate by using a lithography device.
A detection step for detecting a substrate-side mark provided for alignment with an original plate in at least one shot region where the pattern formation is planned to be performed by the lithography apparatus among a plurality of shot regions of the substrate. ,
An acquisition process for acquiring mark position information indicating the detection result of the substrate side mark by another lithography apparatus, and
Based on the mark position information corrected by the detection result of the substrate side mark detected in the detection step, a step of aligning the shot region of the substrate with the original plate to form a pattern, and a step of forming a pattern.
A pattern forming method characterized by having. A pattern forming method for forming a pattern of a first original plate and a pattern of a second original plate different from the first original plate on a substrate by using a plurality of lithography devices including a first lithography device and a second lithography device. And
In the first lithography apparatus
For alignment with the first original plate in at least one shot region where pattern formation is planned to be performed using the first original plate in the first lithography apparatus among a plurality of shot regions of the substrate. The process of detecting the provided first substrate side mark and
Of the plurality of shot regions, the second lithography apparatus is provided for alignment with the second original plate in at least one shot region where pattern formation is planned to be performed using the second original plate. The process of detecting the mark on the second board side and
A step of outputting mark position information indicating a detection result of the mark on the second substrate side so that the mark can be used by the second lithography apparatus.
Based on the detection result of the mark on the first substrate side, a step of aligning the shot region of the substrate with the first original plate to form a pattern, and
Have,
In the second lithography apparatus
The detection step for detecting the mark on the second substrate side and
The acquisition process for acquiring the mark position information output from the first lithography apparatus, and
Based on the mark position information corrected by the detection result of the mark on the second substrate side detected in the detection step, the shot region of the substrate and the second original plate are aligned to form the pattern. Process and
A pattern forming method characterized by having. A lithography device that forms a pattern on a substrate to form an original pattern.
A detection unit that detects a mark provided for alignment with the original plate in the shot region of the substrate, and a detection unit.
A control unit that controls the alignment between the shot region and the original plate and the pattern formation based on the detection result of the detection unit.
Have,
The control unit
It is provided for alignment with the first original plate in at least one shot region where pattern formation is planned to be performed using the first original plate in the lithography apparatus among a plurality of shot regions of the substrate. At least one shot in which the mark on the first substrate side is detected and the pattern is formed by using a second original plate different from the first original plate in another lithography apparatus among the plurality of shot areas. The detection unit is controlled so as to detect the mark on the second substrate side provided for the alignment with the second original plate in the region.
The information of the detection result of the mark on the second substrate side is output so as to be available in the other lithography apparatus.
Based on the detection result of the mark on the first substrate side, the shot region and the first original plate are aligned to form a pattern.
A lithographic device characterized by that. A lithography device that forms a pattern on a substrate to form an original pattern.
A detection unit that detects a mark provided for alignment with the original plate in the shot region of the substrate, and a detection unit.
A control unit that controls the alignment between the shot region and the original plate and the pattern formation based on the detection result of the detection unit.
Have,
The control unit
Among the plurality of shot regions of the substrate, the substrate side mark provided for alignment with the original plate in at least one shot region where the lithography apparatus is scheduled to form a pattern is detected.
The mark position information indicating the result of the detection of the mark on the substrate side by another lithography device is acquired, and the mark position information is acquired.
Based on the mark position information corrected by the detection result of the mark on the substrate side, the shot region of the substrate and the original plate are aligned to form the pattern.
A lithographic device characterized by that. The lithography device according to claim 7, wherein the lithography device is an exposure device that transfers a pattern of the original plate to the substrate via a projection optical system. The lithography device according to claim 7 or 8, wherein the lithography device is an imprint device that forms the pattern on an imprint material on a substrate by using a mold. It is an article manufacturing method that manufactures articles.
A step of forming a pattern on a substrate by using the pattern forming method according to claim 2 or 6.
The process of processing the substrate on which the pattern was formed in the above process and
Including
An article manufacturing method comprising manufacturing an article from the processed substrate.

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