JP6371602B2 - Exposure apparatus, exposure method, and article manufacturing method - Google Patents

Description

The present invention relates to an exposure apparatus, an exposure method, and a method for manufacturing an article.

  For manufacturing a flat panel such as a liquid crystal panel or an organic EL panel or a semiconductor device, an exposure apparatus that transfers an original pattern such as a mask to a substrate such as a glass plate or a wafer coated with a resist is used. In such an exposure apparatus, it is important to align the pattern area of the original plate and the shot area on the substrate with high accuracy.

  Patent Document 1 proposes a method of detecting a plurality of marks formed on a substrate using an off-axis detection unit, and aligning the original and the substrate using the detection result and the baseline amount. Has been. In Patent Document 1, the baseline amount is defined as the distance between the optical axis of the projection optical system and the optical axis of the off-axis detection unit, and the time elapses due to the influence of heat generated in the projection optical system. It can change with. Therefore, in Patent Document 1, a baseline amount for the next exposure is estimated using a function that represents a change in baseline amount over time.

JP 2003-17399 A

  In the exposure apparatus described in Patent Document 1, the baseline amount is merely estimated using a function. Therefore, when an unintended disturbance occurs, it may be insufficient to align the original and the substrate with high accuracy. Further, in Patent Document 1, a TTL (Through The Lens) type detection unit and an off-axis type detection unit are used in combination for alignment between the original plate and the substrate in each shot area on the substrate. There is no description about detecting a plurality of marks.

  Therefore, an object of the present invention is to provide a technique advantageous in aligning an original and a substrate with high accuracy.

To achieve the above object, an exposure apparatus according to one aspect of the present invention is an exposure apparatus for transferring the shot area on the substrate through a pattern of an original projection optical system, provided in the shot area Among the plurality of marks, a first detection unit that detects the position of the first mark group via the original plate and the projection optical system, and among the plurality of marks, a second mark different from the first mark group the position of the group, and the second detection unit for detecting not through the projection optical system, a detection result by the first detection unit, the detection result by the second detection unit, and based on the information about the baseline amount, the A control unit that controls alignment between the original plate and the shot area, and the baseline amount is a detection position on the substrate by the first detection unit and a detection position on the substrate by the second detection unit. Place of Shows the relationship, the control unit based on the position of the at least two first marks contained in said first mark group detected by the first detecting portion in the alignment of the shot region in the substrate First information indicating an arrangement is obtained, and based on positions of at least two second marks included in the second mark group detected by the second detection unit in the alignment, the shot area on the substrate is determined. It obtains a second information indicating an arrangement, based on the first information and the second information, to correct the information on the baseline value, characterized in that.

  Further objects and other aspects of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, for example, a technique advantageous in aligning an original plate and a substrate with high accuracy can be provided.

It is the schematic which shows the structure of the exposure apparatus of 1st Embodiment. It is a figure which shows the positional relationship of an alignment detection part and an off-axis detection part, the position of the mark in an original, and the position of the mark in a board | substrate. It is a figure which shows the flowchart of the exposure process in the exposure apparatus of 1st Embodiment.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member thru | or element, and the overlapping description is abbreviate | omitted.

<First Embodiment>
An apparatus configuration and an alignment method in the exposure apparatus 100 according to the first embodiment of the present invention will be described. FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus 100 according to the first embodiment. The exposure apparatus 100 according to the first embodiment is a step-and-scan exposure apparatus that transfers a pattern of an original 3a to each of a plurality of shot areas on a substrate via a projection optical system 4. The exposure apparatus 100 includes, for example, an illumination optical system 1, an alignment detection unit 2 (first detection unit), a mask stage 3b, a projection optical system 4, and off-axis detection units 91 and 92 (second detection unit). The substrate stage 5b, the surface plate 6, and the control unit 8 can be included. The control unit 8 includes, for example, a CPU and a memory, and controls each unit of the exposure apparatus 100 (controls the exposure processing of the substrate 5a).

  Light emitted from a light source (not shown) enters the illumination optical system 1, and forms, for example, a strip-shaped or arc-shaped exposure region long in the X direction on the original 3a (mask). The original 3a and the substrate 5a (for example, a glass plate) are held by the original stage 3b and the substrate stage 5b, respectively, and are positioned almost conjugate to the optical system via the projection optical system 4 (object plane and image of the projection optical system 4). Surface). The projection optical system 4 is, for example, a mirror projection type projection optical system constituted by a plurality of mirrors, has a predetermined projection magnification (for example, 1 × or 1/2 ×), and is a pattern formed on the original 3a. Is projected onto the substrate 5a. The original stage 3b and the substrate stage 5b correspond to the projection magnification of the projection optical system 4 while being synchronized with each other in a direction (Y direction in the first embodiment) orthogonal to the optical axis direction (Z direction) of the projection optical system 4. Scan at a different speed ratio. Thereby, the pattern formed on the original 3a can be transferred to the shot area on the substrate. Such scanning exposure is sequentially repeated for each of a plurality of shot areas on the substrate while stepping the substrate stage 5b, whereby the exposure processing on one substrate 5a can be completed.

  In this way, when the pattern of the original 3a is transferred to each shot area on the substrate, alignment (positioning) between the area of the original 3a (pattern area 31) on which the pattern is formed and the shot area is performed. The exposure apparatus 100 of the first embodiment detects a plurality of marks provided in each shot area by using the alignment detection unit 2 and off-axis detection units 91 and 92 in combination. Thereby, the throughput can be improved as compared with the conventional exposure apparatus in which a plurality of marks are detected using only the alignment detection unit 2.

The alignment detection unit 2 is disposed between the illumination optical system 1 and the original 3a (original stage 3b), and may include at least one alignment scope. The alignment detection unit 2 of the first embodiment includes two alignment scopes 2a and 2b. Then, the alignment detection unit 2 detects the mark provided in each shot area on the substrate via the alignment optical 2a and 2b and the mark provided on the original 3a and the projection optical system 4. Accordingly, the control unit 8 can obtain the position of the mark provided in the shot area with respect to the original 3a based on the detection result by the alignment detection unit 2. Here, the alignment detection unit 2 may be configured to detect the mark using light (non-exposure light) having a wavelength different from that of the light used when exposing the substrate 5a. A mark on the substrate detected by the alignment detection unit 2 is hereinafter referred to as a first mark. The off-axis detection units 91 and 92 are disposed between the projection optical system 4 and the substrate 5a (substrate stage 5b). Each of which may include at least one off-axis scope. The off-axis detection unit 91 of the first embodiment includes off-axis scopes 91a and 91b, and the off-axis detection unit 92 includes off-axis scopes 92a and 92b. The off-axis detection units 91 and 92 detect the marks provided on the substrate without using the marks provided on the original 3a and the projection optical system 4 by the off-axis scopes 91a to 92b. Thereby, the control unit 8 obtains the position of the mark provided in the shot area with respect to the alignment detection unit 2 based on the detection results by the off-axis detection units 91 and 92 and the information on the baseline amount (baseline information). be able to. The baseline amount represents the positional relationship between the alignment detection unit 2 and the off-axis detection unit 91 or 92. For example, the detection position on the substrate by the alignment detection unit 2 and the detection position on the substrate by the off-axis detection unit 91 or 92 And the distance. Here, the off-axis detection units 91 and 92 may be configured to detect marks using light (non-exposure light) having a wavelength different from that of light used when exposing the substrate 5a. In addition, a mark on the substrate detected by the off-axis detection units 91 and 92 is hereinafter referred to as a second mark, and information regarding the baseline amount is referred to as baseline information.

  For example, as shown in FIG. 2, it is assumed that six marks are provided in each shot area of the original 3a and the substrate 5a. FIG. 2 is a diagram illustrating a positional relationship between the alignment detection unit 2 and the off-axis detection units 91 and 92, a mark position on the original 3a, and a mark position on the substrate 5a. FIG. 2A is a diagram illustrating a positional relationship between the alignment scopes 2a and 2b in the alignment detection unit 2 and the off-axis scopes 91a to 92b in the off-axis detection units 91 and 92. FIG. 2B is a diagram showing the positions of the marks arranged on the original plate, and FIG. 2C is a diagram showing the positions of the marks arranged on the substrate. As shown in FIG. 2B, the original plate 3 a includes a region (pattern region 31) on which a pattern to be transferred to each shot region on the substrate is formed. It is assumed that 316 is provided. As shown in FIG. 2C, the substrate 5a includes four shot areas 51 to 54, and six marks for each of the shot areas 51 to 54 so as to correspond to the six marks provided on the original 3a. Is provided. Marks 511 to 516 for the shot area 51, marks 521 to 526 for the shot area 52, marks 531 to 536 for the shot area 53, and marks 541 to 536 for the shot area 54 546 is provided. The alignment detection unit 2 includes two alignment scopes 2a and 2b, and the off-axis detection units 91 and 92 include two off-axis scopes 91a to 92b, respectively. Each alignment scope and each off-axis scope are arranged so that different marks among a plurality of marks provided in one shot area on the substrate can be detected in parallel.

  In this case, the alignment scopes 2 a and 2 b in the alignment detection unit 2 detect the first mark in each shot area via the mark on the original plate and the projection optical system 4. For example, the alignment scope 2 a detects the first mark 512 in the shot area 51 via the mark 312 on the original plate and the projection optical system 4. Further, the alignment scope 2 b detects the first mark 515 in the shot area 51 via the mark 315 on the original plate and the projection optical system 4. Accordingly, the control unit 8 can obtain the positions of the first marks 512 and 515 relative to the original 3a based on the detection result by the alignment detection unit 2. On the other hand, each of the off-axis scopes 91 a to 92 b in the off-axis detection units 91 and 92 detects the second mark in each shot area without using the mark on the original plate and the projection optical system 4. For example, the off-axis scope 91a detects the mark 513 in the shot area 51, and the off-axis scope 91b detects the mark 516 in the shot area 51. The off-axis scope 92a detects the mark 511 in the shot area 51, and the off-axis scope 92b detects the mark 514 in the shot area 51. Accordingly, the control unit 8 can obtain the position of the second mark with respect to the alignment detection unit 2 based on the detection results by the off-axis detection units 91 and 92 and the baseline information.

  Based on the position of the first mark obtained from the detection result by the alignment detection unit 2 and the position of the second mark obtained from the detection result by the off-axis detection units 91 and 92, the control unit 8 Scanning exposure is performed by aligning the shot area on the substrate. At this time, for example, the control unit 8 performs scanning exposure so that the mark on the original plate and the mark on the shot area overlap each other. In the scanning exposure, for example, the moving speed of the original stage 3b and the substrate stage 5b, the projection magnification of the projection optical system 4, and the like can be controlled by the control unit 8. By performing this process for each shot region, the pattern of the original 3a can be transferred to each of a plurality of shot regions formed on the substrate.

  Here, a method of acquiring baseline information (a method of measuring a baseline amount) will be described. The control unit 8 causes the alignment detection unit 2 and the off-axis detection units 91 and 92 to detect the same mark on the substrate. Then, the control unit 8 determines the position of the same mark obtained from the detection result by the alignment detection unit 2 on the substrate and the position of the same mark obtained from the detection result by the off-axis detection units 91 and 92 on the substrate. Find the difference between Since the difference thus obtained becomes the baseline amount, the control unit 8 can acquire the baseline information based on the difference. For example, the control unit 8 causes the alignment detection unit 2 to detect the first mark (marks 512 and 515) and obtains the position of the first mark on the substrate. Further, after moving the substrate stage 5b, the control unit 8 causes the off-axis detection unit 91 to detect the first mark and obtains the position of the first mark on the substrate. In this case, the difference in position on the substrate of the first mark obtained from the detection result by the alignment detection unit 2 and the detection result by the off-alignment detection unit 91 is the baseline amount.

  Further, the control unit 8 sets the amount of movement of the substrate 5a (the amount of movement of the substrate stage 5b) when the alignment detection unit 2 and the off-axis detection units 91 and 92 detect the same mark on the substrate as the baseline amount. It can also be. For example, the control unit 8 controls the substrate stage 5b so that the first mark is arranged at the center of the visual field of the alignment detection unit 2 (alignment scopes 2a and 2b). Then, the control unit 8 controls the substrate stage 5b so that the first mark is arranged at the center of the field of view of the off-axis detection unit 91 (off-axis scopes 91a and 91b). Since the amount of movement of the substrate 5a (the amount of movement of the substrate stage 5b) at this time is the baseline amount, the control unit 8 can acquire baseline information based on the amount of movement.

  In the exposure apparatus 100 configured in this way, the detection of the first mark on the substrate by the alignment detection unit 2 and the detection of the second mark on the substrate by the off-axis detection units 91 and 92 are performed in parallel. At this time, since the alignment detection unit 2 detects the first mark on the substrate via the mark of the original 3a and the projection optical system 4, the control unit 8 can obtain the position of the first mark with respect to the original 3a. . On the other hand, the off-axis detection units 91 and 92 detect the second mark on the substrate without passing through the mark on the original 3a and the projection optical system 4, but the control unit 8 uses the baseline information to detect the second mark. The position of the mark with respect to the alignment detection unit 2 can be obtained. As a result, the exposure apparatus 100 can align the pattern area 31 on the original plate and each shot area on the substrate with high accuracy, and the alignment detection unit 2 detects all marks on the substrate. Compared with this, throughput can be improved.

  However, in such an exposure apparatus 100, the baseline amount may fluctuate due to the influence of heat generated in the projection optical system 4 or a relative position shift between the off-axis detection unit and the projection optical system. When the baseline amount fluctuates as described above, an error may be included in the position of the second mark on the substrate obtained based on the detection result by the off-axis detection unit and the baseline information. As a result, the alignment accuracy (alignment accuracy) between the original 3a and the substrate 5a is lowered. In addition, it is not preferable that the baseline amount is sequentially measured by the above-described method every time the exposure processing on the substrate 5a is completed, because the throughput decreases. Therefore, the exposure apparatus 100 according to the first embodiment determines each position on the substrate from the position of the first mark in each shot area and the position of the second mark in each shot area obtained in the alignment of the original 3a and the substrate 5a. Find the lattice information of the shot area. Then, the exposure apparatus 100 is based on the amount of deviation of the lattice between the lattice information obtained from the position of the first mark in each shot region and the lattice information obtained from the position of the second mark in each shot region. Correct baseline information. Thereby, since the exposure apparatus 100 of 1st Embodiment can obtain | require the position with respect to the alignment detection part 2 of a 2nd mark accurately, it can align the original 3a and the board | substrate 5a with high precision.

  Next, exposure processing in the exposure apparatus 100 of the first embodiment will be described with reference to FIG. FIG. 3 is a view showing a flowchart of the exposure processing in the exposure apparatus 100 of the first embodiment. In S101, the control unit 8 mounts the substrate 5a on the substrate stage 5b by controlling the substrate transport unit (not shown). In S102, the control unit 8 determines that the first mark of the target shot area to be exposed is detected by the alignment detection unit 2 and the second mark of the target shot area is detected by the off-axis detection units 91 and 92, respectively. 5b is controlled. At this time, the control unit 8 controls the original stage 3 b so that the alignment detection unit 2 detects a mark on the original corresponding to the first mark on the substrate. In S103, the control unit 8 causes the alignment detection unit 2 to detect the first mark and the off-axis detection units 91 and 92 to detect the second mark, and the position of the first mark relative to the original 3a and the second mark alignment detection unit. 2 with respect to each position. In S104, the control unit 8 aligns the pattern area 31 on the original and the target shot area based on the position of the first mark and the position of the second mark obtained in S103, and the target shot of the pattern on the original 3a. Transfer (exposure processing) to the area is performed. In S105, the control unit 8 determines whether or not there is a shot area (next shot area) to be subjected to an exposure process next on the substrate. If there is a next shot area, the process proceeds to S102 and exposure processing is performed on the next shot area. On the other hand, if there is no next shot area, the process proceeds to S106.

  In S106, the control unit 8 determines whether or not to newly acquire baseline information, that is, whether or not to measure the baseline amount again. For example, when the exposure process is performed on the first substrate at the start of the job, or when the exposure process is performed on the first substrate in one lot, etc. Get new baseline information. In addition, the control unit 8 is configured when the number of substrates subjected to exposure processing after acquiring the baseline information reaches a predetermined number, or when the time elapsed after acquiring the baseline information reaches a predetermined time. For example, baseline information may be newly acquired. If new baseline information is acquired, the process proceeds to S107, and if not newly acquired, the process proceeds to S108. In S107, the control unit 8 measures the baseline amount by the above-described method, and newly acquires baseline information.

  In S108, the control unit 8 obtains lattice information of each shot area on the substrate from the position of the first mark of each shot area on the substrate 5a in which the exposure processing has been performed on all shot areas. In S109, the control unit 8 obtains lattice information of each shot area on the substrate from the position of the second mark of each shot area on the substrate on which exposure processing has been performed on all shot areas. The lattice information obtained by S108 and S109 can include, for example, information indicating the arrangement (lattice) of each shot region on the substrate. The arrangement (lattice) of each shot region on the substrate can include at least one of a shift component, a magnification component, and a rotation component, for example.

For example, P _as ijx is the position of the first mark in the X direction of each shot area and P _as ijy is the position of the first mark in the Y direction of each shot area, which is obtained from the detection result by the alignment detection unit 2. A shift component (X direction) in the lattice β1 obtained from the position of the first mark in each shot area is X1, a shift component (Y direction) is Y1, a magnification component is M1, and a rotation component is R1. i represents the number of the shot area on the substrate, and j represents the number of the mark on each shot area. At this time, the relationship between the position d1 of the first mark in each shot region and the lattice β1 is expressed by Expression (1). Therefore, the control unit 8 can obtain the lattice β1 using Expression (2). Here, α1 in the expressions (1) and (2) is a matrix representing the target position of the mark in each shot area.

Further, the position of the second mark in the X direction of each shot area obtained from the detection results and the baseline information by the off-axis detection units 91 and 92 is P _oas ijx, and the position of the second mark in the Y direction of each shot area _Is P _oas ijy. Then, the shift component (X direction) in the lattice β2 obtained from the position of the second mark in each shot area is X2, the shift component (Y direction) is Y2, the magnification component is M2, and the rotation component is R2. At this time, the relationship between the position d2 of the second mark in each shot region and the lattice β2 is expressed by Expression (3). Therefore, the control unit 8 can obtain the lattice β2 using Expression (4). Here, α2 in the equations (3) and (4) is a matrix representing the target position of the mark in each shot area.

  In S110, the control unit 8 obtains the amount of lattice shift between the lattice information obtained from the position of the first mark in each shot region and the lattice information obtained from the position of the second mark in each shot region. For example, the control unit 8 obtains the difference between the lattice β1 obtained from the position of the first mark and the lattice β2 obtained from the position of the second mark as the amount of deviation of the lattice. In S111, the control unit 8 corrects the baseline information using the lattice shift amount obtained in S110. For example, when the control unit 8 acquires the baseline deviation information (when the baseline amount is measured), the control unit 8 acquires the lattice deviation amount and the baseline information obtained in S110. Find the difference from the amount of shift of the lattice at. The difference thus obtained is an amount (amount of variation) in which the amount of shift of the lattice has changed since the baseline information was acquired. The control unit 8 corrects the baseline information by adding the fluctuation amount obtained by the above method as a correction value to the baseline amount included in the baseline information. Here, the amount of shift of the lattice when the baseline information is acquired can be obtained using the substrate on which the information is acquired. That is, the difference between the lattice information obtained from the position of the first mark in each shot region on the substrate and the lattice information obtained from the position of the second mark in each shot region is obtained when the baseline information is acquired. This is the amount of shift of the lattice. In S112, the control unit 8 determines whether or not there is a substrate (next substrate) to be subjected to exposure processing next. If there is a next substrate, the process proceeds to S101, and a new substrate is mounted on the substrate stage 5b. On the other hand, if there is no next substrate, the process ends.

  As described above, the exposure apparatus 100 according to the first embodiment uses the lattice information obtained from the position of the first mark and the position of the second mark in each shot area obtained in the alignment of the original 3a and the substrate 5a. Based on the above, the baseline information is corrected. As a result, the exposure apparatus 100 does not need to sequentially measure the baseline amount every time the exposure process on the substrate 5a is completed, and thus the original plate 3a and the substrate 5a are highly accurately controlled while suppressing a decrease in throughput. Can be aligned.

  Here, for example, the control unit 8 may be configured to correct the baseline information when the lattice shift amount obtained in S110 is greater than or equal to the threshold value, or may vary the lattice shift amount. The correction may be performed when the amount is equal to or greater than a threshold value. The baseline information can be acquired for each of the off-axis scopes 91a to 92b in the off-axis detection units 91 and 92. Therefore, the control unit 8 may correct the baseline information for each of the off-axis scopes 91a to 92b. Thereby, the original plate 3a and the substrate 5a can be aligned with higher accuracy.

<Embodiment of Method for Manufacturing Article>
The method for manufacturing an article in the embodiment of the present invention is suitable for manufacturing an article such as an electronic device such as a semiconductor device or an element having a fine structure. In the method for manufacturing an article according to the present embodiment, a latent image pattern is formed on the photosensitive agent applied to the substrate using the above-described exposure apparatus (a step of exposing the substrate), and the latent image pattern is formed in this step. Developing the substrate. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferred embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

1: illumination optical system, 2: alignment detection unit (first detection unit), 3a: original plate, 3b: original plate stage, 4: projection optical system, 5a: substrate, 5b: substrate stage, 8: control unit, 91 and 92 : Off-axis detection unit (second detection unit), 100: exposure apparatus

Claims (15)

An exposure apparatus for transferring an original pattern to a shot area on a substrate via a projection optical system,
A first detection unit that detects a position of a first mark group among the plurality of marks provided in the shot region via the original and the projection optical system;
A second detection unit that detects a position of a second mark group different from the first mark group among the plurality of marks without using the projection optical system ;
The first detection unit detection result by the second detection section detection result by, and on the basis of information about the baseline amount, the control unit for controlling the alignment between the original and the shot area,
Including
The baseline amount indicates a positional relationship between a detection position on the substrate by the first detection unit and a detection position on the substrate by the second detection unit,
The controller is
First information indicating an arrangement of the shot area on the substrate is obtained based on positions of at least two first marks included in the first mark group detected by the first detection unit in the alignment.
Based on the positions of at least two second marks included in the second mark group detected by the second detection unit in the alignment, second information indicating the arrangement of the shot regions on the substrate is obtained.
On the basis of the second information and the first information, to correct the information relating to the baseline amount, the exposure apparatus characterized by. Wherein the control unit, wherein the first information based on the difference between the second information, to correct the information relating to the baseline amount, that the exposure apparatus according to claim 1, wherein the. The said control part correct | amends the information regarding the said baseline amount, when the variation | change_quantity of the said difference from the time when the information regarding the said baseline amount is acquired is more than a threshold value. Exposure equipment.   The exposure apparatus according to claim 2, wherein the control unit corrects information related to the baseline amount when the difference is equal to or greater than a threshold value. The second detection unit includes a plurality of scopes capable of detecting different second marks in parallel,
5. The exposure apparatus according to claim 1, wherein the control unit corrects information related to the baseline amount for each scope of the second detection unit. 6.   6. The baseline amount according to claim 1, wherein the baseline amount is a distance between a detection position on the substrate by the first detection unit and a detection position on the substrate by the second detection unit. The exposure apparatus according to item. The first information and the second information each include information indicating at least one of a shift component, a magnification component, and a rotation component of each shot region. The exposure apparatus described in 1. Wherein, the first to detect the same marks on the substrate and the a detector second detector in position and the second detecting portion of the first the same marks detected by the detection unit based on the difference between the detected position of the same mark, the exposure apparatus according to any one of claims 1 to 7 wherein the pre-acquires information about the baseline value, characterized in that. The control unit causes the first detection unit and the second detection unit to detect the same mark on the substrate, and the position of the substrate when the first detection unit detects the position of the same mark. , on the basis of the difference between the position of the substrate when it detects the position of the same mark in the second detector, to obtain information about the base line amount in advance, 1 to claim, characterized in that The exposure apparatus according to any one of 7. 10. The exposure apparatus according to claim 8, wherein the control unit acquires information on the baseline amount before starting the transfer process of the pattern of the original on the substrate. The control unit obtains the first information based on positions of the at least two first marks detected by the first detection unit for each of a plurality of shot regions on the substrate, and 11. The exposure according to claim 1, wherein the second information is obtained based on positions of the at least two second marks detected by the second detection unit for each. 11. apparatus. The first detection unit and the second detection unit may perform the detection of the position of the first mark by the first detection unit and the detection of the position of the second mark by the second detection unit in parallel. The exposure apparatus according to claim 1, wherein the exposure apparatus is arranged so as to be able to perform. The second detection unit, an exposure apparatus according to any one of claims 1 to 12, characterized in that is disposed between the substrate and the projection optical system. A step of exposing a substrate using an exposure apparatus according to any one of claims 1 to 13,
Developing the substrate exposed in the step;
A method for producing an article comprising: An exposure method in an exposure apparatus that transfers a pattern of an original to a shot area on a substrate via a projection optical system,
The exposure apparatus includes:
A first detection unit that detects a position of a first mark group among the plurality of marks provided in the shot region via the original and the projection optical system;
A second detection unit that detects a position of a second mark group different from the first mark group among the plurality of marks without using the projection optical system ;
The exposure method is:
An acquisition step of acquiring information on a baseline amount indicating a positional relationship between a detection position on the substrate by the first detection unit and a detection position on the substrate by the second detection unit;
The first detection unit detecting result by the second detection section detection result by, and on the basis of information about the baseline amount, have rows aligned between the master and the shot area, the shot area pattern of the original A transfer process for transferring to
Based on the positions of at least two first marks included in the first mark group detected by the first detection unit in the transfer step, first information indicating the arrangement of the shot areas on the substrate is generated. A first generation step;
Based on the positions of at least two second marks included in the second mark group detected by the second detection unit in the transfer step, second information indicating the arrangement of the shot areas on the substrate is generated. A second generation step;
A correction step of correcting information related to the baseline amount based on the first information and the second information ;
An exposure method comprising :

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