JP7061968B2 - 研磨用組成物及び研磨方法 - Google Patents
研磨用組成物及び研磨方法 Download PDFInfo
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- JP7061968B2 JP7061968B2 JP2018559608A JP2018559608A JP7061968B2 JP 7061968 B2 JP7061968 B2 JP 7061968B2 JP 2018559608 A JP2018559608 A JP 2018559608A JP 2018559608 A JP2018559608 A JP 2018559608A JP 7061968 B2 JP7061968 B2 JP 7061968B2
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- polishing
- mass
- polishing composition
- silicon wafer
- composition
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- 238000005498 polishing Methods 0.000 title claims description 131
- 239000000203 mixture Substances 0.000 title claims description 74
- 238000000034 method Methods 0.000 title claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- -1 alkali metal salts Chemical class 0.000 claims description 25
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 23
- 150000005215 alkyl ethers Chemical class 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- HOVAGTYPODGVJG-UVSYOFPXSA-N (3s,5r)-2-(hydroxymethyl)-6-methoxyoxane-3,4,5-triol Chemical compound COC1OC(CO)[C@@H](O)C(O)[C@H]1O HOVAGTYPODGVJG-UVSYOFPXSA-N 0.000 claims description 13
- HOVAGTYPODGVJG-UHFFFAOYSA-N methyl beta-galactoside Natural products COC1OC(CO)C(O)C(O)C1O HOVAGTYPODGVJG-UHFFFAOYSA-N 0.000 claims description 12
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000006260 foam Substances 0.000 claims description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 25
- 230000007547 defect Effects 0.000 description 20
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 11
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 10
- 150000007514 bases Chemical class 0.000 description 10
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 10
- 229920001451 polypropylene glycol Polymers 0.000 description 10
- 235000011118 potassium hydroxide Nutrition 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229920003169 water-soluble polymer Polymers 0.000 description 9
- 239000011362 coarse particle Substances 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000002612 dispersion medium Substances 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- 235000011181 potassium carbonates Nutrition 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 3
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930182478 glucoside Natural products 0.000 description 2
- 150000008131 glucosides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000004691 decahydrates Chemical class 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
表1に示す実施例1~4、及び比較例1~12の研磨用組成物を作製した。
表3に示す実施例1、3~16、比較例1、12、13の研磨用組成物を作成した。なお、研磨例1と対比しやすくするため、同じ配合のものには同じ実施例・比較例の番号を付した(実施例1、3、4、比較例1、8、12)。
Claims (3)
- シリカ粒子と、
無機アルカリ化合物と、
ポリグリセリンと、
多鎖型のポリオキシアルキレンアルキルエーテルとを含み、
pHが8.0~12.0であり、
前記無機アルカリ化合物は、アルカリ金属の水酸化物、アルカリ金属の塩、アルカリ土類金属の水酸化物、アルカリ土類金属の塩から選ばれる少なくとも一種である、シリコンウェーハ研磨用組成物。 - 請求項1に記載のシリコンウェーハ研磨用組成物であって、
前記多鎖型のポリオキシアルキレンアルキルエーテルは、ポリオキシアルキレンメチルグルコシド及びポリオキシアルキレンポリグリセリルエーテルから選ばれる少なくとも一種である、シリコンウェーハ研磨用組成物。 - 請求項1又は2に記載のシリコンウェーハ研磨用組成物と、硬度が80以下である発泡ウレタンパッドを用いて、シリコンウェーハを仕上げ研磨する工程を含む、シリコンウェーハの研磨方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016255136 | 2016-12-28 | ||
JP2016255136 | 2016-12-28 | ||
PCT/JP2017/047077 WO2018124226A1 (ja) | 2016-12-28 | 2017-12-27 | 研磨用組成物及び研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018124226A1 JPWO2018124226A1 (ja) | 2019-10-31 |
JP7061968B2 true JP7061968B2 (ja) | 2022-05-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018559608A Active JP7061968B2 (ja) | 2016-12-28 | 2017-12-27 | 研磨用組成物及び研磨方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7061968B2 (ja) |
KR (1) | KR102508181B1 (ja) |
CN (1) | CN110023449B (ja) |
TW (1) | TWI753984B (ja) |
WO (1) | WO2018124226A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
JPWO2021199723A1 (ja) * | 2020-03-31 | 2021-10-07 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157442A1 (ja) | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2014187268A (ja) | 2013-03-25 | 2014-10-02 | Hitachi Chemical Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2015109423A (ja) | 2013-10-25 | 2015-06-11 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101153206A (zh) * | 2006-09-29 | 2008-04-02 | 安集微电子(上海)有限公司 | 用于抛光多晶硅的化学机械抛光液 |
WO2009041697A1 (ja) * | 2007-09-28 | 2009-04-02 | Nitta Haas Incorporated | 研磨用組成物 |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
US9640407B2 (en) * | 2011-06-14 | 2017-05-02 | Fujimi Incorporated | Polishing composition |
KR102004570B1 (ko) * | 2012-02-21 | 2019-07-26 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
JP2015088495A (ja) * | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
JP6028942B2 (ja) * | 2012-05-25 | 2016-11-24 | 日産化学工業株式会社 | ウェーハ用研磨液組成物 |
CN104582899B (zh) * | 2012-08-30 | 2018-11-09 | 日立化成株式会社 | 研磨剂、研磨剂套剂及基体的研磨方法 |
JP6343160B2 (ja) * | 2014-03-28 | 2018-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2016031485A1 (ja) * | 2014-08-29 | 2016-03-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨用組成物の製造方法 |
JP6559936B2 (ja) * | 2014-09-05 | 2019-08-14 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物、リンス組成物、基板研磨方法およびリンス方法 |
US10946494B2 (en) * | 2015-03-10 | 2021-03-16 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
CN105950115A (zh) * | 2016-05-13 | 2016-09-21 | 盐城工学院 | 一种适用于氧化镓衬底的环保研磨膏及其制备方法 |
-
2017
- 2017-12-27 WO PCT/JP2017/047077 patent/WO2018124226A1/ja active Application Filing
- 2017-12-27 KR KR1020197018210A patent/KR102508181B1/ko active IP Right Grant
- 2017-12-27 CN CN201780074856.5A patent/CN110023449B/zh active Active
- 2017-12-27 JP JP2018559608A patent/JP7061968B2/ja active Active
- 2017-12-28 TW TW106146204A patent/TWI753984B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157442A1 (ja) | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2014187268A (ja) | 2013-03-25 | 2014-10-02 | Hitachi Chemical Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2015109423A (ja) | 2013-10-25 | 2015-06-11 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2018124226A1 (ja) | 2019-10-31 |
WO2018124226A1 (ja) | 2018-07-05 |
TW201831645A (zh) | 2018-09-01 |
TWI753984B (zh) | 2022-02-01 |
KR102508181B1 (ko) | 2023-03-09 |
KR20190098152A (ko) | 2019-08-21 |
CN110023449A (zh) | 2019-07-16 |
CN110023449B (zh) | 2021-08-17 |
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