JP6813263B2 - Wiring boards, semiconductor device packages and semiconductor devices - Google Patents

Description

The present invention relates to a wiring board for transmitting a differential signal, a semiconductor element package including the wiring board, and a semiconductor device.

By using optical transmission, signal communication has been significantly speeded up, and electrical signal transmission has also been speeded up. A differential line transmission method is used as a transmission method suitable for high-speed transmission. In the differential line system, high-frequency signals having opposite phases are transmitted by a pair of transmission lines, and a potential difference is detected from the two signals at the transmission destination. Even if noise is mixed during transmission by a pair of transmission lines, the mixed noise is canceled by detecting the potential difference, so that signal transmission with high noise immunity can be realized.

The pair of differential lines are arranged in parallel on the dielectric substrate at regular intervals, and when a signal is transmitted, the lines are designed so that they are coupled to each other to have a predetermined impedance. However, since the circuits and electronic components to be connected differ between one end side and the other end side of the pair of transmission lines, if the distance between the lines at the end is changed according to the connection destination, the one end side And the other end side may have different intervals. For example, the distance on the other end side is larger than the distance on the one end side.

In the printed wiring board described in Patent Document 1, a feedback current pattern is provided between the lines at the line opening where the differential transmission line expands, and the differential impedance is matched between one end and the other end. It is a printed wiring board with different track spacing.

JP-A-2007-324511

In the case of a high-frequency differential line, the differential signal is transmitted to the two signal wirings (S), and the ground wiring (G) is provided along both sides of the two signal wirings (S) to stably transmit the differential signal. ..

In this way, the high-frequency differential line is often arranged side by side with the GSS-G. On the other hand, there is also a differential line arranged with G-S-G-S-G. When a GSS-SG differential line is connected to one end and a differential line having a GSSGSG arrangement is connected to the other end, the wiring arrangement is different at both ends. I can't connect as it is.

An object of the present invention is to provide a wiring substrate, a semiconductor element package, and a semiconductor device having a differential line arrangement conversion function having good transmission characteristics of high-frequency signals.

The wiring substrate of one aspect of the present invention is a dielectric substrate and a pair of differential signal transmission lines provided on one main surface of the dielectric substrate for performing differential signal transmission, and is wiring at the first end. A first transmission line having a first central wiring portion for connecting a portion, a second end portion wiring portion, the first end portion wiring portion, and the second end portion wiring portion, and a first transmission line having the first end portion wiring portion. A third end wiring portion adjacent to each other with a gap of 1, a fourth end wiring portion arranged at the second end wiring portion with a second spacing larger than the first spacing, and the first. 1 A pair of differential signal transmissions including a second transmission line having a second central wiring portion for connecting the third end wiring portion and the fourth end wiring portion provided along the central wiring portion. A line, a first ground wiring provided along the first transmission line on the one main surface, a second ground wiring provided along the second transmission line on the one main surface, and the one main surface. It is characterized by including a third ground wiring provided at the second interval on the surface.

In the above embodiment, the first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the first central wiring portion are provided. 2 It is preferable that the distance from the central wiring portion is the same as the first distance.

Further, in the above aspect, the third ground wiring has a teardrop shape, and the second end wiring portion has a first bending portion that is bent and connected to the first central wiring portion, and the first bending portion. It is connected to the bent portion and has a first free end portion located on the end side of the dielectric substrate, and the fourth end wiring portion is bent and connected to the second central wiring portion. It has a second bent portion, a second free end portion connected to the second bent portion and located on the end side of the dielectric substrate, and the first bent portion, the second bent portion, and the like. The first free end portion and the second free end portion are provided so as to follow the shape of the third ground wiring, and the first free end portion and the second free end portion are separated from each other by the first distance. It is a portion that is large and smaller than the maximum distance between the first bent portion and the second bent portion, and the maximum distance between the first bent portion and the second bent portion is the portion between the first free end portion and the second bent portion. It is a portion larger than the distance from the second free end portion.

Further, in the above aspect, the first bent portion and the second bent portion are preferably curved.

Further, in the above aspect, the third grounding wiring has a teardrop shape, and the fifth end portion located between the first bent portion and the second bent portion is opposite to the fifth end portion. It has a sixth end portion located between the first free end portion and the second free end portion on the side, and the wiring width is narrow from the fifth end portion to the sixth end portion. Therefore, the first bent portion, the second bent portion, the first free end portion, and the second free end portion are preferably provided so as to follow the shape of the third grounding wiring.

Further, in the above aspect, it is preferable to further include a ground via conductor connected to the fifth end portion and embedded in the dielectric substrate.

Further, the semiconductor element package according to one aspect of the present invention includes a plate-shaped substrate having a main surface including a mounting region on which the semiconductor element is mounted, and a frame provided on the main surface so as to surround the previously described mounting region. The member and the wiring board, the first end wiring portion and the third end wiring portion are arranged outside or inside the frame member, and the second end wiring portion and the fourth end are arranged. It is characterized by including a wiring board provided so as to penetrate the frame member so that the wiring portion is arranged inside or outside the frame member.

Further, the semiconductor device according to one aspect of the present invention includes the above-mentioned semiconductor element package, the semiconductor element mounted in the above-described region, a pair of differential signal transmission lines, the first grounded wiring, and the second grounded. It is characterized by including wiring, the third grounded wiring, and a connecting member for electrically connecting the semiconductor element.

According to the wiring board of one aspect of the present invention, the first grounded wiring and the second grounded wiring are provided on both sides of the pair of differential signal transmission lines for performing the differential signal transmission, and the second end wiring portion and the wiring portion. A third ground wire is provided between the wire and the fourth end wiring section. As a result, even if one side is a line of ground wiring-signal wiring-signal wiring-ground wiring and the other side is a line of ground wiring-signal wiring-ground wiring-signal wiring-ground wiring, the impedance It is possible to provide a wiring substrate that suppresses reflection and loss due to fluctuations and the like to satisfactorily convert the transmission characteristics of high-frequency signals.

In the above embodiment, the first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the second central wiring portion are connected to each other. When the interval is the same as the first interval, the high frequency impedance can be made constant from the first end wiring portion to the first central wiring portion and from the third end wiring portion to the second central wiring portion.

Further, in the above aspect, the second end wiring portion has a first bent portion that is bent and connected to the first central wiring portion, and a first free end portion that is connected to the first bent portion. When the fourth end wiring portion has a second bent portion that is bent and connected to the second central wiring portion and a second free end portion that is connected to the second bent portion, the first play The distance between the end portion and the second free end portion can be different from the distance between the first central wiring portion and the second central wiring portion.

Further, in the above aspect, when the first bent portion and the second bent portion are curved, the high frequency impedance fluctuation in the first bent portion and the second bent portion can be reduced.

Further, in the above aspect, the third ground wiring has a fifth end portion located between the first bent portion and the second bent portion and a sixth end portion on the opposite side to the fifth end portion. , The wiring width becomes narrower from the 5th end to the 6th end, and the first bent portion, the second bent portion, the first free end portion and the second free end portion follow the shape of the third ground wiring. If it is provided in, the distance between the first free end portion and the second free end portion can be narrowed while reducing the fluctuation of the high frequency impedance.

Further, in the above aspect, if the grounding via conductor connected to the fifth end portion and embedded in the dielectric substrate is further included, the grounding potential of the third grounding wiring can be stabilized.

Further, according to the semiconductor element package of one aspect of the present invention, since the above wiring board is provided, a semiconductor element package having good high frequency signal transmission characteristics can be realized.

Further, according to the semiconductor device of one aspect of the present invention, since the above-mentioned semiconductor element package is provided, it is possible to realize a semiconductor device having good transmission characteristics of high frequency signals.

It is a perspective view which shows the wiring board 1 which is an embodiment of this invention. It is an enlarged plan view of the main part of the wiring board 1 shown in FIG. It is a perspective view which shows the semiconductor element package 100 which includes a wiring board 1. It is a top view of the semiconductor element package 100. It is sectional drawing of the semiconductor element package 100 in the cut plane line AA of FIG. It is an enlarged sectional view of the vicinity of a wiring board 1. It is a perspective view which shows the semiconductor device 200.

FIG. 1 is a perspective view showing a wiring board 1 according to an embodiment of the present invention. Further, FIG. 2 is a partially enlarged plan view of the vicinity of the other end of the wiring board 1. The wiring board 1 includes a dielectric board 2, a pair of differential signal transmission lines 3 and 4, a first grounded wire 5, a second grounded wire 6, a third grounded wire 7, and a grounded conductor layer 8. Including. Hereinafter, the wiring board 1 will be described with reference to FIGS. 1 and 2.

The dielectric substrate 2 is a substrate made of a dielectric material. On one main surface 2a of the dielectric substrate 2, each wiring of a pair of differential signal transmission lines 3 and 4, a first ground wiring 5, a second ground wiring 6 and a third ground wiring 7, and a ground conductor layer 8 are provided. Is provided. The ground conductor layer 8 may also be provided on the other main surface of the dielectric substrate 2. Further, instead of providing it on the other main surface, it may be provided as an inner layer grounding conductor layer 10 on the inner layer of the dielectric substrate 2.

The dielectric material includes, for example, a ceramic material such as an aluminum oxide sintered body, a mulite sintered body, a silicon carbide sintered body, an aluminum nitride material sintered body or a silicon nitride material sintered body, or a glass ceramic. Materials can be used.

The pair of differential signal transmission lines 3 and 4 are provided on one main surface 2a of the dielectric substrate 2 and transmit differential signals. The pair of differential signal transmission lines 3 and 4 are paired wirings including the first transmission line 3 and the second transmission line 4 and coupled to each other.

The first transmission line 3 includes a first end wiring portion 3a on one end side, a second end wiring portion 3b on the other end side, a first end wiring portion 3a, and a second end wiring portion 3b. It has a first central wiring portion 3c to be connected.

The second transmission line 4 includes a third end wiring portion 4a on one end side, a fourth end wiring portion 4b on the other end side, a third end wiring portion 4a, and a fourth end wiring portion 4b. It has a second central wiring portion 4c to be connected. The third end wiring portion 4a is adjacent to the first end wiring portion 3a with a first interval, and the fourth end wiring portion 4b is adjacent to the second end wiring portion 3b at a first interval. It is arranged with a second larger interval. That is, in the pair of differential signal transmission lines 3 and 4, the distance between the two wirings on the other end side is wider than the distance between the two wirings on the one end side.

Further, the second transmission line 4 is provided along the first central wiring portion 3c, and has a second central wiring portion 4c that connects the third end portion wiring portion 4a and the fourth end portion wiring portion 4b.

On one main surface 2a of the dielectric substrate 2, a first grounded wiring 5 provided along the first transmission line 3, a second grounded wiring 6 provided along the second transmission line 4, and a second end portion are provided. A third grounded wiring 7 is provided at a second interval between the wiring portion 3b and the fourth end wiring portion 4b. The third grounded wiring 7 is provided between the first transmission line 3 and the second transmission line 4 from the other end side. Further, the third grounded wiring 7 extends to the middle of the first transmission line 3 and the second transmission line 4 along the first transmission line 3 and the second transmission line 4 extending from the other end side to the one end side. ing.

The wiring provided on one main surface 2a of the dielectric substrate 2 is, on one end side, with the first ground wiring 5-first transmission line 3-second transmission line 4-second ground wiring 6 (GSSG). On the other end side, they are lined up with the first ground wire 5-first transmission line 3-third ground wire 7-second transmission line 4-second ground wire 6 (GSGSG). By providing the third ground wiring 7 between the first transmission line 3 and the second transmission line 4, the pair of differential signal transmission lines 3 and 4 have a GSSG configuration on one end side and the other end. On the side, it has a GSGSG configuration and can accommodate different end configurations.

Since the pair of differential signal transmission lines 3 and 4 transmit high-frequency signals while coupling with each other, the first transmission line 3 and the second transmission line 4 have approximately the same line width, conductor thickness, and line length (electrical length). It is preferable that the same is true and the distance between the first transmission line 3 and the second transmission line 4 is constant. In the present embodiment, the first end wiring portion 3a, the third end wiring portion 4a, the first central wiring portion 3c, and the second central wiring portion 4c are all provided in a straight line, and the first end is provided. The distance between the part wiring portion 3a and the third end wiring portion 4a is the same as the distance between the first central wiring portion 3c and the second central wiring portion 4c. In the second end wiring portion 3b and the fourth end wiring portion 4b, the line spacing is the first end wiring portion 3a, the first central wiring portion 3c, the third end wiring portion 4a, and the second central wiring portion 4c. Wider than the line spacing in. Although the first transmission line 3 and the second transmission line 4 are simply represented by linear lines, it goes without saying that they can be curved and routed to a predetermined position on the wiring board 1.

On the other end side, in order to form a GNDSG configuration, the second interval, which is the interval between the second end wiring portion 3b and the fourth end wiring portion 4b, is set to the first end wiring portion 3a and the third end portion. The distance from the wiring portion 4a is larger than the first distance, and the third ground wiring 7 is provided between them. The second interval can be the shortest interval in which the third ground wiring 7 can be provided. At this time, the second end wiring portion 3b and the fourth end wiring portion 4b have the same line width, conductor thickness, and line length, and the second end wiring portion 3b and the third grounded wiring 7 are further connected. The spacing and the spacing between the fourth end wiring portion 4b and the third ground wiring 7 are the same.

In the second end wiring portion 3b and the fourth end wiring portion 4b, by widening the second spacing from the first spacing, the spacing between the first grounded wiring 5 and the second grounded wiring 6 is also widened. The capacitance between the 1 ground wiring 5 and the 2nd ground wiring 6 tends to decrease, and the impedance tends to increase. Therefore, in the second end wiring portion 3b and the fourth end wiring portion 4b, the width in the direction orthogonal to the transmission direction is widened, and the capacitance between the first ground wiring 5 and the second ground wiring 6 is increased. It was necessary to lower the impedance by increasing it. This makes it difficult for the wiring board 1 to arrange the second end wiring portion 3b and the fourth end wiring portion 4b at high density on the other end side of the dielectric substrate 2. Further, in the connection portion between the first central wiring portion 3c and the second end wiring portion 3b, and the connection portion between the second central wiring portion 4c and the fourth end wiring portion 4b, the directions orthogonal to the transmission direction. Due to the change in the width of the transmission line in the above, there is a possibility that reflection loss and insertion loss increase and frequency resonance occurs.

On the other hand, in the present invention, the wiring board 1 is provided between the second end wiring portion 3b and the fourth end wiring portion 4b provided so as to widen the second interval from the first interval. 3 By providing the grounded wiring 7, the capacitance is increased and the impedance is lowered without widening the width of the second end wiring portion 3b and the fourth end wiring portion 4b in the direction orthogonal to the transmission direction. Can be made to. Further, the wiring board 1 reflects the transmission line at the connection portion between the first central wiring portion 3c and the second end wiring portion 3b and the connection portion between the second central wiring portion 4c and the fourth end wiring portion 4b. It is possible to suppress an increase in loss and insertion loss, and the occurrence of frequency resonance.

As described above, in the present embodiment, in order to provide the third ground wiring 7, the distance between the second end wiring portion 3b and the fourth end wiring portion 4b is set between the first end wiring portion 3a and the third end portion. It is made larger than the distance from the wiring portion 4a. Specifically, the second end wiring portion 3b has a first bent portion 30a that is bent and connected to the first central wiring portion 3c, and a first free end portion 30b that is bent and connected to the first bent portion 30a. The fourth end wiring portion 4b has a second bent portion 40a that is bent and connected to the second central wiring portion 4c, and a second free end portion 40b that is bent and connected to the second bent portion 40a.

By having the first bent portion 30a and the second bent portion 40a at least separated from each other, the distance between the second end wiring portion 3b and the fourth end wiring portion 4b is increased, and the third ground wiring is made. 7 is provided. The third ground wiring 7 has a fifth end portion 7a located between the first bent portion 30a and the second bent portion 40a, and a sixth end portion 7b on the opposite side of the fifth end portion 7a. .. The sixth end portion 7b is located on the other end side of the dielectric substrate 2. The third grounded wiring 7 has a wiring shape that does not deteriorate the high frequency characteristics. Further, the third ground wiring 7 is connected to the ground conductor in order to have a ground potential. For example, the third ground wiring 7 is electrically connected to the inner layer ground conductor layer 10 connected to the ground conductor by the via conductor at the fifth end 7a, and the ground conductor layer 8 provided on the other main surface of the dielectric substrate 2. Is connected.

The width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a are the width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a in order to reduce impedance fluctuations and improve frequency characteristics such as reflection loss and insertion loss. Is constant. Further, in order to increase the control range of the capacitance between the second end wiring portion 3b and the third ground wiring 7 and the fourth end wiring portion 4b and the third ground wiring 7, the first bent portion 30a and the first bending portion 30a and the first 2 The bent portion 40a is formed into a convex curve in a direction away from each other. Then, the shape of the third ground wiring 7 follows the shapes of the first bent portion 30a and the second bent portion 40a.

If the width of the transmission line of the first bent portion 30a and the second bent portion 40a is significantly changed or if an acute-angled corner portion is provided, insertion loss and reflection loss increase, and frequency resonance also occurs. Therefore,
It is preferable that the width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a are constant and curved.

In the present embodiment, the first bent portion 30a and the second bent portion 40a have an arc shape that is convex in the direction in which they are separated from each other. The first free end portion 30b and the second free end portion 40b are connected to the arc-shaped first bent portion 30a and the second bent portion 40a, respectively. A connecting member such as a bonding wire 12 having a function of electrically connecting a pair of differential signal transmission lines 3 and 4 and a semiconductor element 11 or the like is connected to the first free end portion 30b and the second free end portion 40b. To. The first free end portion 30b and the second free end portion 40b are provided so as to extend in parallel with the other end portion side of the dielectric substrate 2.

The sixth end portion 7b of the third ground wiring 7 is arranged between the first free end portion 30b and the second free end portion 40b while maintaining a distance between the first free end portion 30b and the second free end portion 40b. Will be done. Depending on the shapes of the second end wiring portion 3b, the fourth end wiring portion 4b, the first free end portion 30b, and the second free end portion 40b, the third ground wiring 7 may be the fifth end portion 7a. The shape of the above is substantially circular, and the wiring width is narrowed toward the sixth end portion 7b. The third grounded wiring 7 has a so-called teardrop-like shape when viewed on a plane of the wiring board 1.

The distance between the first free end portion 30b and the second free end portion 40b is smaller than the distance between the first bent portion 30a and the second bent portion 40a, but the first end wiring portion 3a and the third end wiring It is larger than the distance from the part 4a. In the present embodiment, the first transmission line 3 and the second transmission line 4 are located from the connection portion with the first central wiring portion 3c and the second central wiring portion 4c toward the other end side of the dielectric substrate 2. The distance between the first bent portion 30a and the second bent portion 40a is widened so as to be separated from each other, and then the first bent portion 30a and the second bent portion 40a are brought close to each other so that the first free end portion 30b and the second bent portion 40a 2 Connected to the free end portion 40b.

Since the first bent portion 30a and the second bent portion 40a need only be provided with the third grounding wiring 7 between them, they are separated from each other toward the other end side of the dielectric substrate 2 and do not come close to each other as they are. The first free end portion 30b and the second free end portion 40b may be connected to each other and arranged in parallel while maintaining the same spacing. In that case, the distance between the first free end portion 30b and the second free end portion 40b becomes relatively large, and the third ground wiring arranged between the first free end portion 30b and the second free end portion 40b. The line width at the sixth end 7b of 7 is increased.

The first free end portion 30b, the second free end portion 40b, and the sixth end portion 7b of the third ground wiring 7 are connected to the wiring conductor provided on the semiconductor element 11 or the mount member 15 by a connecting member such as a bonding wire 12. It is the part to be done.

In the bonding wire 12, the diameter of the transmission line is small with respect to the length, and the inductance component is large. Further, if there is no conductor that can be electromagnetically coupled to the periphery, the capacitance component becomes small. Therefore, the high-frequency impedance tends to be higher than that of the transmission line, and the transmission characteristics of the high-frequency signal transmitting the bonding wire 12 from the first free end portion 30b and the second free end portion 40b tend to deteriorate.

Even if there is no dielectric in the periphery, the bonding wires 12 are electromagnetically bonded to each other as in the transmission line, and the smaller the distance between the bonding wires 12, the stronger the electromagnetic coupling. In the present embodiment, the first bent portion 30a and the second bent portion 40a are provided so as to be close to each other after being separated from each other in the transmission direction, so that the first free end portion 30b and the second bent portion 30b are provided. The distance between the free end portion 40b and the sixth end portion 7b of the third ground wiring 7 can be made relatively small. Therefore, the distance between the connecting members such as the bonding wires 12 can be reduced, and the electromagnetic coupling can be strengthened. As a result, it is possible to suppress an increase in impedance in a connecting member such as the bonding wire 12, and to suppress deterioration of transmission characteristics in the bonding wire 12.

Since the second end wiring portion 3b and the fourth end wiring portion 4b are portions that deteriorate the high frequency transmission characteristics of the first transmission line 3 and the second transmission line 4, the second end wiring portion 3b and the fourth are The length of the end wiring portion 4b is preferably, for example, 5 to 30% of the total length of the first transmission line 3 and the second transmission line 4.

The ground conductor layer 8 is a solid provided on one main surface 2a of the dielectric substrate 2 in a direction orthogonal to the extending direction of the differential signal transmission lines 3 and 4, and on the other main surface or inner layer of the dielectric substrate 2. It is a conductor layer. On the other hand, instead of being provided on the main surface, the inner layer of the dielectric substrate 2 may be provided as the inner layer grounding conductor layer 10. The ground conductor layer 8 and the inner ground conductor layer 10 are electrically connected to the ground conductor and serve as the ground potential (reference potential) of the differential signal transmission lines 3 and 4.

The pair of differential signal transmission lines 3 and 4, the first ground wire 5, the second ground wire 6 and the third ground wire 7 and the ground conductor layer 8 are gold, silver, copper, nickel, tungsten and molybdenum. It is made of a metal material such as manganese and manganese, and is simultaneously fired or metal-plated on the surface layer of the dielectric substrate 2 in the form of a metallized layer or a plating layer. Further, a wire rod made of a metal material may be processed into a predetermined shape and bonded to a plating layer provided on the surface layer of the dielectric substrate 2 via a bonding material such as a brazing material. For example, a dielectric substrate may be used. Not limited to metal materials that can be fired at the same time as 2, a metal alloy made of iron, nickel, cobalt, chromium, etc. is processed into a predetermined wiring shape, and a brazing material is formed on the plating layer provided on the surface layer of the dielectric substrate 2. Those joined by can also be used.

When the dielectric substrate 2 is made of, for example, an aluminum oxide sintered body, it can be produced as follows. First, raw material powders such as aluminum oxide and silicon oxide are formed into a sheet together with an appropriate organic binder and an organic solvent to prepare a plurality of rectangular sheet-shaped ceramic green sheets. Next, these ceramic green sheets are laminated to prepare a laminated body. Then, the dielectric substrate 2 can be produced by firing this laminate at a temperature of 1300 to 1600 ° C. It should be noted that the ceramic green sheet does not necessarily have to be laminated with a plurality of layers, and only one layer may be used as long as there is no problem in terms of mechanical strength as the dielectric substrate 2.

When the dielectric substrate 2 is made of an aluminum oxide sintered body, each wiring and the ground conductor layer 8 contain, for example, tungsten, and can be produced as follows. A method such as a screen printing method so that a metal paste prepared by mixing tungsten powder with an organic solvent and an organic binder is formed into a predetermined pattern shape on the surface (main surface) of a ceramic green sheet to be a dielectric substrate 2. Print with. After that, each wiring and the ground conductor layer 8 can be formed by a method of simultaneously firing these ceramic green sheets and metal pastes.

Further, each wiring may include an interlayer connection conductor, and can be formed by the same method using the same metal material as described above. In the case of an interlayer connection conductor, a through hole penetrating in the thickness direction is provided in advance in the ceramic green sheet to be the dielectric substrate 2, and the through hole is filled with a metal paste to form the ceramic green sheet and the metal paste. It may be fired at the same time.

Next, the semiconductor element package 100 and the semiconductor device 200 including the wiring board 1 will be described.

FIG. 3 is a perspective view showing a semiconductor element package 100 including the wiring board 1. FIG. 4 is a plan view of the semiconductor device package 100. FIG. 5 is a cross-sectional view of the semiconductor device package 100 at the cut plane line AA of FIG. FIG. 6 is an enlarged cross-sectional view of the vicinity of the wiring board 1. FIG. 7 is a perspective view showing the semiconductor device 200.

The semiconductor element package 100 includes a wiring board 1, a base 20, and a frame member 30. The semiconductor element package 100 comprises a semiconductor device 200 in which the semiconductor element 11 is housed and has a function of inputting and outputting an electric signal to the semiconductor element.

In the present embodiment, the semiconductor element 11 housed in the semiconductor element package 100 is an example of an LD (laser diode) which is a light emitting element.

The substrate 20 is formed in a rectangular plate shape, and has a mounting region on the main surface 2a on which the semiconductor element 11 can be mounted. This mounting region is a region for mounting the semiconductor element 11 housed in the semiconductor element package 100 and fixing the semiconductor element to the surface of the substrate 20.

The substrate 20 of the present embodiment is manufactured by laminating a plurality of insulating substrates. Then, the semiconductor element 11 is mounted on the mounting region of the substrate 20. The insulating substrate may be, for example, a ceramic material such as an aluminum oxide sintered body, a mulite sintered body, a silicon carbide sintered body, an aluminum nitride material sintered body or a silicon nitride material sintered body, or a glass ceramic. Materials can be used.

An example of a method for producing the substrate 20 will be described. A mixing member is prepared by mixing a raw material powder containing the glass powder and the ceramic powder of the above materials, an organic solvent, and a binder. A plurality of ceramic green sheets are produced by molding this mixing member into a sheet shape. A laminated body is produced by laminating a plurality of produced ceramic green sheets. The substrate 20 is produced by firing the laminate at a temperature of about 1600 degrees.

The substrate 20 is not limited to a configuration in which a plurality of insulating substrates are laminated. The substrate 20 may be composed of one insulating substrate. Further, since the substrate 20 is required to have high insulating properties at least in the mounting region on which the semiconductor element 11 is mounted, for example, an insulating substrate is placed on at least the mounting region of the metal substrate. May be laminated. In particular, when high heat dissipation is required for the substrate 20, since the metal member has high heat dissipation, it is preferable that the substrate 20 has such a configuration. The heat dissipation of the substrate 20 can be improved by stacking the insulating substrate on the metal substrate.

Specific examples of the metal substrate material include metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals such as copper-tungsten alloy, copper-molybdenum alloy and iron-nickel. -A cobalt alloy or the like can be used. A metal substrate constituting the substrate 20 can be produced by subjecting an ingot of such a metal material to a metal processing method such as a rolling process or a punching process.

A substrate 20 is obtained by joining a separately prepared insulating substrate with a bonding material such as a brazing material on the mounting region of the produced metal substrate.

The frame member 30 is provided on one main surface of the substrate 20 so as to surround the mounting area of the substrate 20 in a plan view. The frame member 30 may surround the mounting area, and the mounting area may be located in the central portion or other portions inside the frame member 30. Further, as in the present embodiment, the substrate 20 may have a main surface larger than that of the frame member 30 and may have an extending portion, and may have substantially the same outer shape as the frame member 30. Good.

The frame member 30 is made of a metal material, and for example, a metal member such as iron, copper, nickel, chromium, cobalt and tungsten similar to the base 20 or an alloy made of these metals can be used. A frame member 30 made of a metal member can be manufactured by subjecting an ingot of such a metal member to a metal processing method such as a cutting method, a die processing method, or a punching processing method. Further, a ceramic material may be used as the frame member 30. Further, the frame member 30 may be made of one kind of material, but may have a structure in which a plurality of kinds of materials are laminated.

Further, in the present embodiment, when an optical semiconductor element such as LD or PD, an LN modulation element, or the like is used as the semiconductor element, the frame member 30 is provided with a through hole 31 for transmitting light. .. The input / output end of the optical fiber may be inserted into the through hole 31 and the light emitted from the semiconductor element 11 may be input to the optical fiber, or the light emitted from the optical fiber may be input to the semiconductor element 11. .. Further, the input / output end of the optical fiber may be fixed outside the through hole 31, and the light emitted from the semiconductor element 11 may be transmitted through the through hole 31 and input to the external optical fiber. The light emitted from the semiconductor element 11 may be input to the semiconductor element 11.

An elongated hole is formed in the side wall of the frame member 30, and the wiring board 1 is provided so as to penetrate the side wall of the frame member 30 so as to close the elongated hole. The wiring board 1 inputs and outputs an electric signal from the inside of the frame member 30 to the outside of the frame or from the outside of the frame to the inside of the frame. The first end wiring portion 3a and the third end wiring portion 4a of the wiring board 1 are arranged outside the frame member 30, and the second end wiring portion 3b and the fourth end wiring portion 4b are inside the frame member 30. Is placed in. The second end wiring portion 3b and the fourth end wiring portion 4b arranged inside are electrically connected to the semiconductor element 11 mounted in the mounting region of the substrate 20 by a connecting member in the frame. For example, a driver circuit or the like may be connected between the second end wiring portion 3b and the fourth end wiring portion 4b and the semiconductor element 11. The first-end wiring portion 3a and the third-end wiring portion 4a of the wiring board 1 are electrically connected to an external circuit such as an external flexible board.

Contrary to the above-described embodiment, the wiring board 1 has a first end wiring portion 3a and a third end wiring portion 4a arranged inside the frame member 30, and the second end wiring portion 3b and the fourth end. The portion wiring portion 4b may be provided so as to be arranged outside the frame member 30.

The connection between the semiconductor element 11 and the wiring board 1 is performed by, for example, a bonding wire 12.

The semiconductor element package 100 may include a lid member. The lid member is fixed to the upper surface of the frame member 30 by a joining material such as a brazing material. When assembling the semiconductor device 200, the semiconductor element 11 is placed in the mounting region of the substrate 20 and fixed to the substrate 20, the semiconductor element 11 and the wiring substrate 1 are electrically connected, and the semiconductor element 11 is an optical semiconductor. In the case of an element, the optical fiber is fixed in the through hole 31 so that an optical signal is input and output from the semiconductor element 11. After that, the lid member is fixed to the frame member 30. The lid member is fixed to the frame member 30 by, for example, seam welding.

The lid member may be any as long as it can prevent moisture, fine particles, etc. from entering the inside of the semiconductor device 200, and a metal material, a ceramic material, or the like similar to the frame member 30 may be processed and molded into a plate shape. it can.

Here, for example, when the semiconductor element 11 is an optical semiconductor element, since the semiconductor element 11 needs to be arranged on the optical axis of the optical fiber, the semiconductor element 11 is not directly mounted on the substrate 20, and the mounting member 15 is used. Is preferably fixed to the mounting region of the substrate 20 and mounted via the mounting member 15. The mount member 15 may be any material having an insulating property, and a ceramic material similar to the insulating substrate described in the substrate 20 can be used.

As shown in FIG. 6, the wiring board 1 is connected to the fifth end portion 7a of the third ground wiring 7, and is connected to the ground via conductor 9 and the ground via conductor 9 embedded in the dielectric substrate 2, and the dielectric substrate 2 It may further have an internal grounding conductor layer 10 connected internally. At a point where the first bent portion 30a and the second bent portion 40a start to separate from each other in the transmission direction from the connection portion between the first central wiring portion 3c and the second central wiring portion 4c, the third ground wiring 7 and It is difficult to bring the distance close to each other, and the coupling becomes weak and the impedance becomes high. By burying the grounding via conductor 9 at a position connected to the fifth end portion 7a, it is possible to prevent the impedance from increasing due to electric field coupling between the first bent portion 30a and the second bent portion 40a.

The above-mentioned semiconductor device 200 has a configuration in which a light emitting element is housed as a semiconductor element 11, but the semiconductor device of the present invention is not limited to this, and has a structure in which a PD (photodiode) which is a light receiving element is housed as a semiconductor element 11. There may be.

The light receiving element, which is the semiconductor element 11, receives the light emitted from the optical fiber and outputs an electric signal according to the amount of received light. This electric signal is output to the outside via the wiring board 1. The external control unit executes processing according to the electric signal output from the semiconductor device.

The wiring substrate 1 shown in this embodiment can also be used in a package that houses an LN modulation element, a signal processing arithmetic element, and other high-frequency semiconductor elements that are not optical semiconductor elements.

1 Wiring board 2 Dielectric board 2a One main surface 3 1st transmission line 3a 1st end wiring part 3b 2nd end wiring part 3c 1st central wiring part 4 2nd transmission line 4a 3rd end wiring part 4b No. 4 End wiring part 4c 2nd central wiring part 5 1st ground wiring 6 2nd ground wiring 7 3rd ground wiring 7a 5th end 7b 6th end 8 Ground conductor layer 9 Ground via conductor 10 Internal ground conductor layer 11 Semiconductor element 15 Mount member 20 Base 30 Frame member 31 Through hole 30a First bent part 30b First free end part 40a Second bent part 40b Second free end part 100 Semiconductor element package 200 Semiconductor device

Claims (5)

Dielectric substrate and
A pair of differential signal transmission lines provided on one main surface of the dielectric substrate for transmitting differential signals.
A first transmission line having a first end wiring portion, a second end wiring portion, a first central wiring portion connecting the first end wiring portion and the second end wiring portion, and a first transmission line.
The third end wiring portion adjacent to the first end wiring portion with a first interval is arranged, and the second end wiring portion is arranged with a second interval larger than the first interval. A second transmission line having a second central wiring portion for connecting the third end wiring portion and the fourth end wiring portion, which is provided along the fourth end wiring portion and the first central wiring portion. A pair of differential signal transmission lines consisting of,
A first grounded wiring provided along the first transmission line on one of the main surfaces,
A second ground wire provided along the second transmission line on one of the main surfaces,
It includes a third grounding wiring provided at the second interval on one of the main surfaces and having a teardrop shape from the second end wiring portion to the first end wiring portion.
The first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the second central wiring portion are provided. The interval with and is the same as the first interval,
The second end wiring portion is connected to the first bent portion and the first bent portion which is bent and connected to the first central wiring portion, and is located on the end side of the dielectric substrate. It has one free end and
The fourth end wiring portion is connected to the second bent portion and the second bent portion which is bent and connected to the second central wiring portion, and is located on the end side of the dielectric substrate. It has two free ends and
The first bent portion, the second bent portion, the first free end portion, and the second free end portion are provided so as to follow the shape of the third ground wiring.
The first free end portion and the second free end portion are portions that are larger than the first free end portion and smaller than the maximum distance between the first bent portion and the second bent portion.
A wiring board characterized in that the maximum distance between the first bent portion and the second bent portion is larger than the distance between the first free end portion and the second free end portion. The wiring board according to claim 1, wherein the first bent portion and the second bent portion are curved. The first or second aspect of the invention, wherein the third grounding wiring is connected to an end portion on the first end wiring portion side and further includes a grounding via conductor embedded in the dielectric substrate. Wiring board. A plate-shaped substrate having a main surface including a mounting area on which a semiconductor element is mounted,
A frame member provided on the main surface so as to surround the above-mentioned placement area,
The wiring board according to any one of claims 1 to 3, wherein the first end wiring portion and the third end wiring portion are arranged outside or inside the frame member, and the second end. A semiconductor device package comprising: a wiring board provided so as to penetrate the frame member so that the portion wiring portion and the fourth end portion wiring portion are arranged inside or outside the frame member. The semiconductor device package according to claim 4 and
Semiconductor devices mounted in the above-mentioned placement region,
A semiconductor device including a pair of differential signal transmission lines, the first grounded wiring, the second grounded wiring, the third grounded wiring, and a connecting member for electrically connecting the semiconductor element. ..

Images