JP7254011B2 - Wiring substrate, package for storing semiconductor element, and semiconductor device - Google Patents

Description

The present invention relates to a wiring substrate, a package for housing a semiconductor element, and a semiconductor device.

Conventionally, as a wiring substrate used for transmitting high frequency signals in the millimeter wave band, a wiring conductor is positioned on an insulating material, and a ground conductor is positioned directly below the wiring conductor at a certain distance via an insulating material. There was (see patent document 1). However, in the wiring substrate described above, when a high-frequency signal is transmitted to the wiring conductor, an electric field is generated from the wiring conductor to the ground conductor immediately below the wiring conductor. There was a problem. In order to solve this problem, an invention has been disclosed in which the ground conductor is not positioned directly under the wiring conductor, and only the insulating material is positioned thereon.

JP-A-9-23106 JP-A-2000-68715

However, in a conventional wiring substrate such as that disclosed in Patent Document 2, dielectric resonance is likely to occur, which hinders efficient transmission of high-frequency signals.

A wiring base according to an embodiment of the present disclosure includes an insulating base, a wiring conductor, a lead terminal connected to the wiring conductor and extending along a first direction, and an internal ground conductor positioned inside the insulating base. have. The insulating base has a first surface and includes an insulating material. A wiring conductor is located on the first surface. The internal ground conductor extends along the first surface and has a distance D1 from the first surface in a second direction perpendicular to the first surface, and a first internal ground conductor extends along the first surface. and a second internal ground conductor whose distance D2 from the first surface in the second direction is greater than the distance D1. The second internal ground conductor faces the wiring conductor in the second direction with the insulating material of the insulating base interposed therebetween in a cross-sectional view that is orthogonal to the first surface and includes the first direction. and has a first portion overlapping the lead terminal.

A semiconductor element storage package according to an embodiment of the present disclosure includes a wiring substrate configured as described above, a substrate having a mounting surface, and a frame surrounding the mounting surface. The frame body has a mating portion penetrating inside and outside in a direction along the mounting surface. The wiring substrate is positioned so as to be fitted to the fitting portion.

A semiconductor device according to an embodiment of the present disclosure includes a semiconductor element housing package configured as described above, and a semiconductor element located on a mounting portion and connected to the wiring conductor.

A wiring substrate according to an embodiment of the present disclosure generates less unwanted resonance. A semiconductor element housing package and a semiconductor device according to an embodiment of the present disclosure, which include the wiring substrate described above, are excellent in high-frequency signal transmission efficiency.

1 is a top perspective view of a semiconductor element housing package according to an embodiment of the present disclosure; FIG. 2 is a bottom perspective view of the semiconductor element housing package shown in FIG. 1; FIG. 2 is a bottom view of the semiconductor element housing package shown in FIG. 1; FIG. 1 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure; FIG. FIG. 5 is a top view of the wiring substrate shown in FIG. 4; FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; 1 is a perspective view of a semiconductor device according to an embodiment of the present disclosure; FIG.

A wiring substrate 1, a semiconductor element housing package 100, and a semiconductor device 1000 according to embodiments of the present invention will be described below with reference to the drawings.

<Structure of Wiring Substrate 1>
A wiring substrate 1 shown in FIG. 6 includes an insulating substrate 10 , a wiring conductor 20 , an internal ground conductor 30 and a lead terminal 40 .

The insulating substrate 10 includes an insulating material 11, and the insulating material 11 is made of a dielectric material. Examples of dielectric materials include ceramic materials such as aluminum oxide sintered bodies, mullite sintered bodies, silicon carbide sintered bodies, aluminum nitride sintered bodies and silicon nitride sintered bodies, or glass ceramics. materials can be used.

The insulating substrate 10 may be formed by lamination of dielectric materials. The insulating base 10 also has a first surface 12 . The shape of the insulating base 10 is, for example, a rectangular shape or a U shape in a plan view toward the first surface 12, with a size of 2 mm×2 mm to 25 mm×50 mm and a height of 1 mm to 10 mm. There may be. The sizes of the insulating substrate 10 and the first surface 12 can be appropriately set. In this specification, the first surface 12 may be referred to as the upper surface, and the surface opposite to the first surface 12 may be referred to as the lower surface.

A wiring conductor 20 is positioned on the first surface 12 and extends outward from the insulating substrate 10 from the inner side of the first surface 12 as viewed from the top of the first surface 12 . Note that the direction in which the lead terminal 40 extends is defined as the first direction in this specification. A direction perpendicular to the first direction is defined as a second direction.

The wiring conductor 20 in the present disclosure is a transmission line through which a high frequency signal (eg, 10 to 100 GHz) is transmitted, and the lead terminal 40 connected to the wiring conductor 20 functions as a signal terminal. The wiring conductor 20 may have a width of 0.05 mm to 2 mm perpendicular to the first direction, a length of 0.5 mm to 20 mm along the first direction, and a thickness of 0.01 mm to 0.1 mm. The width, length, and thickness of the wiring conductor 20 can be set as appropriate.

A ground conductor 21 having a ground potential may be located on the first surface 12 . The ground conductor 21 may have a first region 211 along the wiring conductor 20 . A lead terminal 40 connected to the ground conductor 21 functions as a ground terminal. The first region 211 may have a width of 0.05 mm to 2 mm, a length of 0.5 mm to 20 mm, and a thickness of 0.01 mm to 0.1 mm. Note that the width, length, and thickness of the first region 211 of the ground conductor 21 can be appropriately set.

A plurality of wiring conductors 20 and ground conductors 21 may be provided, and may be arranged alternately or differentially. Specifically, differential means that the ground conductor 21, the wiring conductor 20, the wiring conductor 20, and the ground conductor 21 are arranged in this order in plan view. By arranging the wiring conductors 20 and the ground conductors 21 in a differential manner, noise resistance is improved. The ground conductor 21 may further have a second region 212 connected to the first region 211 along the wiring conductor 20 and surrounding the wiring conductor 20 including the first region 211 . Having the second region 212 widens the region functioning as the ground, thereby improving the high-frequency characteristics.

The wiring conductor 20 and the ground conductor 21 may be metallized layers formed on the first surface 12 . The metallized layer is made of, for example, a metal material such as tungsten, molybdenum and manganese, and may be plated with nickel or gold. The wiring conductor 20 or the ground conductor 21 and the lead terminal 40 may be connected by a bonding material. The bonding material used in this embodiment is, for example, solder or brazing material.

The recess 13 may be located between the wiring conductors 20 or the recess 14 may be located between the wiring conductor 20 and the ground conductor 21 . Since the spaces formed by the recesses 13 and 14 are electrically insulated, the effective dielectric constant in the vicinity of the wiring conductor 20 is lowered, thereby facilitating impedance matching. As a result, the frequency characteristics of high frequency signals are improved.

The shape of the recesses 13 and 14 is not particularly limited, but the inner walls may be tapered or reverse tapered in a cross-sectional view orthogonal to the first direction in order to enlarge the area. By enlarging the areas of the recesses 13 and 14, the effective dielectric constant in the vicinity of the wiring conductor 20 can be lowered. As a result, it becomes easier to perform impedance matching, and the frequency characteristics of high frequency signals are improved.

The concave portions 13 and 14 may have a rectangular shape in plan view toward the first surface 12 . Also, the concave portions 13 and 14 may be semi-circular or semi-oval. As a result, the occurrence of cracks at the ends of the recesses 13 and 14 can be reduced. Further, as shown in FIG. 5, in a plan view toward the first surface 12, the recesses 13 and 14 may further have recesses 15 at the ends thereof. As a result, the effective dielectric constant in the vicinity of the wiring conductor 20 is further lowered, thereby facilitating impedance matching and improving the frequency characteristics of high-frequency signals. Note that the recess 15 may have a rectangular shape in plan view toward the first surface 12 . Also, the depression 15 may be semi-circular or semi-oval.

The lead terminal 40 is a member for electrically connecting to an external electric circuit board or the like. The lead terminal 40 may be connected onto the wiring conductor 20 or the ground conductor 21 via a bonding material such as brazing material. By providing a space between adjacent wiring conductors 20 or ground conductors 21, the adjacent wiring conductors 20 or ground conductors 21 can be electrically insulated and electromagnetic coupling can be suppressed. By providing each lead terminal 40 on the wiring conductor 20 or the ground conductor 21, the adjacent lead terminals 40 are electrically insulated from each other, and the external electric circuit is connected in a state in which electromagnetic coupling is suppressed. It can be electrically connected to the substrate.

The shape of the lead terminal 40 in a cross-sectional view perpendicular to the first direction may be, for example, a rectangular shape or a circular shape. 6 and 7, in a cross-sectional view orthogonal to the first surface 12 and including the first direction, the connection portion 41 connected to the wiring conductor 20 or the ground conductor 21 located on the first surface 12 and the , and an inclined portion 42 inclined with respect to the first surface 12 . With this shape, when the semiconductor housing package 100 is mounted on a printed board or the like via the lead terminals 40, the stress generated between the semiconductor housing package 100 and the printed board can be alleviated.

Of the two ends of the connection portion 41 , the end positioned inside the insulating base 10 in a plan view toward the first surface 12 is called a first end 411 . In addition, of the both end portions of the connection portion 41 , the end portion positioned outside the insulating base 10 is referred to as a second end portion 412 .

The inclined portion 42 may have a portion that overlaps the first surface 12 in the second direction in a cross-sectional view that is orthogonal to the first surface and includes the first direction. At this time, the inclined portion 42 is positioned continuously with the second end 412 .

Also, the lead terminal 40 may be linear as shown in FIGS. Due to the linear shape, the length of the lead terminal 40 can be shortened, and the high frequency characteristics are improved.

The internal ground conductor 30 is located inside the insulating substrate 10 or between insulating layers. The internal ground conductor 30 has at least a first internal ground conductor 31 and a second internal ground conductor 32 . The internal ground conductor 30 has a ground potential and may be electrically connected to the ground conductor 21 via the penetrating conductor 34 . Also, the plurality of internal ground conductors 30 may be electrically connected via through conductors 34 . As a result, the area functioning as the ground is widened, so that the high frequency characteristics are improved. Metal materials such as tungsten, molybdenum, and manganese can be used for the through conductors 34, for example. The internal ground conductor 30 may be a metallized layer formed on an insulating layer. The metallized layer is made of, for example, a metal material such as tungsten, molybdenum and manganese, and may be plated with nickel or gold.

The length of the penetrating conductor 34 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent high-frequency signals from leaking from between the internal ground conductors 30 . The effective wavelength in this specification is obtained by dividing the wavelength of the high-frequency signal to be used by the square root of the dielectric constant of the insulating substrate 10 .

The distance of the first internal ground conductor 31 in the second direction from the first surface 12 may be, for example, 0.05 mm to 0.3 mm. In this specification, the distance of the first internal ground conductor 31 in the second direction is defined as D1. D1 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . By making D1 equal to or less than the effective wavelength of transmission, it is possible to reduce the occurrence of resonance between the insulating substrate 10 and the wiring conductor 20 between the first internal ground conductor 31 and the first surface 12 in a cross-sectional view. . As a result, transmission loss due to resonance can be reduced, and high-frequency signals can be transmitted satisfactorily.

The second internal ground conductor 32 may have a distance of, for example, 0.1 mm to 0.6 mm from the first surface 12 in the second direction. In this specification, the distance of the first internal ground conductor 31 in the second direction is defined as D2. D2 has a greater distance in the second direction than D1. Also, D2 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 .

The second internal ground conductor 32 has a first portion 323 . When the first part 323 is cross-sectionally viewed perpendicular to the first surface 12 and including the first direction, the second internal ground conductor 32 and the wiring conductor 20 are positioned so that the insulating material 11 of the insulating substrate 10 is in contact with the second internal ground conductor 32 and the wiring conductor 20 in the second direction. , and overlap the lead terminal 40 . That is, it has a stepped shape in a cross-sectional view that is orthogonal to the first surface 12 and includes the first direction.

Since the wiring substrate 1 is affected by the relative dielectric constant of the external environment, resonance is more likely to occur the closer it is positioned directly below the portion of the wiring conductor 20 extending in the first direction. On the other hand, since D2 is larger than D1, the second internal ground conductor 32 has a larger distance in the second direction than the first internal ground conductor 31 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. , and the wiring conductor 20 positioned on the first surface 12 face each other with the insulating material 11 interposed therebetween. As a result, the occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be reduced. Further, since D2 is equal to or less than the effective wavelength of the wiring conductor 20, occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be further reduced.

The length of the first portion 323 along the first direction may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . Thereby, unnecessary resonance caused by the length of the first portion 323 can be suppressed. In this specification, L1 is the length of the first internal ground conductor 31 in the first direction.

In the second direction, the distance from the first internal ground conductor 31 to the second internal ground conductor 32 may be, for example, 0.05 mm to 0.3 mm. In this specification, the distance from the first internal ground conductor 31 to the second internal ground conductor 32 is defined as D3. D3 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent the high-frequency signal from leaking from between the first internal ground conductor 31 and the second internal ground conductor 32 .

The internal ground conductor 30 may further have a third internal ground conductor 33 extending parallel to the first surface 12 . The distance of the third internal ground conductor 33 in the second direction from the first surface 12 may be, for example, 0.15 mm to 0.9 mm. In this specification, the distance of the third internal ground conductor 33 in the second direction is defined as D4. D4 may be longer than D2 in the second direction, and D4 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 .

The third internal ground conductor 33 may have a second portion 333 . When the second portion 333 is cross-sectionally viewed perpendicular to the first surface 12 and including the first direction, the third internal ground conductor 33 and the wiring conductor 20 are separated from each other by the insulating material 11 of the insulating base 10 in the second direction. , and overlap the lead terminal 40 . That is, it has a stepped shape in a cross-sectional view. A third internal ground conductor 33 having a second portion 333 may be further positioned immediately below the third internal ground conductor 33 in the second direction.

The length of the second portion 333 along the first direction may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . Thereby, unnecessary resonance caused by the length of the second portion 333 can be suppressed. In this specification, the length of the second portion 333 along the first direction is L2.

Since D4 is larger than D2, the third internal ground conductor 33 having a greater distance in the second direction than the second internal ground conductor 32 in a cross-sectional view orthogonal to the first surface 12 and including the first direction The wiring conductors 20 positioned on the surface 12 face each other with the insulating material 11 interposed therebetween. As a result, the occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be reduced. Further, since D4 is equal to or less than the effective wavelength of the wiring conductor 20, occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be further reduced.

The distance from the second internal ground conductor 32 to the third internal ground conductor 33 in the second direction may be, for example, 0.05 mm to 0.3 mm. In this specification, D5 is the distance from the second internal ground conductor 32 to the third internal ground conductor 33 in the second direction. D5 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent the high-frequency signal from leaking from between the second internal ground conductor 32 and the third internal ground conductor 33 .

Further, the first internal ground conductor 31 does not have to overlap the connection portion 41 of the lead terminal 40 as shown in FIGS. good. Moreover, as shown in FIGS. 7 and 9, the lead terminal 40 may be positioned so as to partially overlap with the connection portion 41 of the lead terminal 40 . When the first internal ground conductor 31 does not overlap with the lead terminal 40 , the perpendicular extending in the second direction from the first end 411 of the connection portion 41 of the lead terminal 40 is aligned with the end of the first internal ground conductor 31 . may be connected. As a result, at the first end portion 411 of the lead terminal 40 where the change in impedance is large, the second internal ground conductor 32 having a larger distance in the second direction than the first internal ground conductor 31 is directly below the lead terminal 40 connecting portion 41. Since it is positioned, the change in impedance can be mitigated, the high frequency characteristics can be improved, and the occurrence of unnecessary resonance can be reduced. When positioned so as to overlap with a portion of the connection portion 41 of the lead terminal 40, the area of the insulating base 10 positioned between the wiring conductor 20 and each internal ground conductor 30 via the insulating material 11 can be reduced. , the unwanted resonance generated in the insulating substrate 10 can be shifted to a high frequency. As a result, unnecessary resonance can be reduced.

The first portion 323 of the second internal ground conductor 32 may be positioned so as to partially overlap the connecting portion 41 of the lead terminal 40 in a cross-sectional view orthogonal to the first surface 12 and including the first direction. In other words, the perpendicular extending in the second direction from the second end portion 412 of the connecting portion 41 does not have to contact the first portion 323 . At this time, a perpendicular from the second end 412 may contact the second portion 333 . In other words, the second portion 333 of the third internal ground conductor 33 having a longer distance in the second direction than the second internal ground conductor 32 may be positioned directly below the connection portion 41 of the lead terminal 40 . As a result, between the second portion 333 and the first surface 12, the third internal ground conductor 33 and the wiring conductor 20, which have a larger distance in the second direction than the second internal ground conductor 32, are separated through the insulating material 11. to face each other. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced.

Also, the first portion 323 of the second internal ground conductor 32 is positioned so as to overlap the entire connection portion 41 of the lead terminal 40 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. good too. In other words, a perpendicular extending in the second direction from the second end 412 of the connecting portion 41 may contact the first portion 323 . As a result, the second internal ground conductor 32 having a longer distance in the second direction than the first internal ground conductor 31 is positioned directly below the connection portion 41 of the lead terminal 40 . As a result, it becomes easier to match the change in impedance immediately below the connecting portion 41 of the lead terminal 40 to a desired value, thereby improving the high frequency characteristics and reducing the occurrence of unnecessary resonance. When the lead terminal has a linear shape in a cross-sectional view perpendicular to the first surface 12 and including the first direction, the second internal ground conductor may extend to the end of the insulating substrate 10. good.

The second portion 333 of the third internal ground conductor 33 may be positioned so as to overlap the entire connection portion 41 of the lead terminal 40 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. . In other words, a perpendicular extending in the second direction from the second end 412 of the connecting portion 41 may contact the second portion 333 . As a result, the third internal ground conductor 33 having a longer distance in the second direction than the first internal ground conductor 31 and the second internal ground conductor 32 is positioned directly below the connection portion 41 of the lead terminal 40 . In other words, the third internal ground conductor 33 having a larger distance in the second direction than the second internal ground conductor 32 and the wiring conductor 20 located on the first surface 12 face each other with the insulating material 11 interposed therebetween. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced. When the lead terminal 40 has a linear shape in a cross-sectional view perpendicular to the first surface 12 and including the first direction, the third internal ground conductor 33 extends to the end of the insulating base 10 and is positioned. may As a result, the change in impedance immediately below the connection portion 41 of the lead terminal 40 can be matched to a desired value, the high frequency characteristics can be improved, and the occurrence of unnecessary resonance can be reduced.

When the third internal ground conductor 33 having the second portion 333 is further positioned immediately below the third internal ground conductor 33 in the second direction, the second portion 333 of the third internal ground conductor 33 is the first It may be located so as to partially overlap the connection portion 41 of the lead terminal 40 in a cross-sectional view that is orthogonal to the surface 12 and includes the first direction. As a result, the second portion 333 of the third internal ground conductor 33 having a longer distance in the second direction than the second portion 333 of the third internal ground conductor 31 is positioned directly below the connection portion 41 of the lead terminal 40 . , the second portion 333 and the wiring conductor 20 face each other with the second portion 333 and the insulating material 11 interposed therebetween. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced.

<Manufacturing Method of Wiring Substrate 1>
An example of a method for manufacturing the wiring substrate 1 will be described below. The wiring substrate 1 includes an insulating substrate 10 , a wiring conductor 20 and an internal ground conductor 30 . First, an example of a method for manufacturing the insulating substrate 10 will be described. For example, if the insulating substrate 10 has a plurality of insulating layers made of an aluminum oxide sintered body, the insulating substrate 10 is manufactured as follows. First, raw material powders such as aluminum oxide and silicon oxide are added and mixed with an appropriate organic binder and solvent to prepare a slurry. Next, the slurry is formed into sheets by a forming method such as a doctor blade method to produce a plurality of ceramic green sheets. At this time, notches that become the recesses 13 and 14 and the depression 15 may be formed in a part of the green sheet.

Next, an example of a method for manufacturing the wiring conductor 20 and the internal ground conductor 30 will be described. The wiring conductor 20, the internal ground conductor 30, the ground conductor 21, the first internal ground conductor 31, the second internal ground conductor 32, and the third internal ground conductor 33 are made of metal with a high melting point, such as tungsten, molybdenum, and manganese. If it consists of a metallized layer, it can be formed as follows. That is, first, a metal paste prepared by kneading high-melting metal powder with an organic solvent and a binder so as to be well mixed is printed by a method such as screen printing on predetermined portions of the ceramic green sheet that will be the upper and lower surfaces of the insulating layer. . After that, the ceramic green sheets on which these metal pastes are printed are stacked and pressure-bonded, and simultaneously fired. Through the above steps, the wiring conductor 20, the ground conductor 21, the internal ground conductor 30, the first internal ground conductor 31, and the second internal ground conductor 32 are formed on the first surface 12 of the insulating base 10 and the inner layer of the insulating base 10. , as well as the third internal ground conductor 33 . At this time, by printing a metal paste on the inner side surfaces and bottom surfaces of the recesses 13 , 14 or the recesses 15 , the metallized layers can also be formed on the inner side surfaces and bottom surfaces of the recesses 13 , 14 or the recesses 15 . In addition, each conductor may be provided with nickel plating or gold plating on its surface.

The wiring substrate 1 is formed by forming the wiring conductor 20 , the internal ground conductor 30 and the like on the insulating substrate 10 .

The through conductor 34 that electrically connects the ground conductor 21 and the internal ground conductor 30 or the plurality of internal ground conductors 30 to each other is formed by, for example, providing through holes in a ceramic green sheet serving as a plurality of insulating layers. , the through-holes can be filled with the same metal paste as that used to form each conductor, and the respective ceramic green sheets can be stacked, pressure-bonded, and simultaneously fired. The through-holes can be formed, for example, by mechanical punching using a metal pin or drilling such as processing using laser light. When filling the through-holes with the metal paste, a means such as vacuum suction may be used in combination to facilitate the filling of the metal paste.

<Structure of semiconductor element housing package 100>
A semiconductor element housing package 100 shown in FIG.

The substrate 50 has a mounting surface 51 . The substrate 50 may have, for example, a rectangular shape in plan view. In the case of a rectangular shape, the size in plan view may be 5 mm×10 mm to 50 mm×50 mm, and the thickness may be 0.3 mm to 20 mm. The mounting surface has, for example, the same shape as the substrate 50, and may be rectangular in plan view. In addition, in the case of a rectangular shape, the size in plan view may be 5 mm×10 mm to 50 mm×50 mm. The size of the substrate 50 and the size of the mounting surface 51 can be set as appropriate.

The substrate 50 is made of metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals such as copper-tungsten alloys, copper-molybdenum alloys, iron-nickel-cobalt alloys, etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, a metal member constituting the substrate 50 can be manufactured.

The frame body 60 is positioned so as to surround the mounting surface 51 . The frame body 60 may be rectangular or U-shaped in a plan view facing the placement surface 51, and may have a size of 5 mm×10 mm to 50 mm×50 mm and a height of 2 mm to 15 mm. Also, the thickness may be 0.5 mm to 2 mm. The size of the frame 60 can be set appropriately.

The frame 60 is made of metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals, such as copper-tungsten alloys, copper-molybdenum alloys, iron-nickel-cobalt alloys. etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, the metal member constituting the frame 60 can be produced.

A fitting portion 61 of the wiring substrate 1 is positioned on the side wall of the frame 60 . The fitting portion 61 penetrates the inside and outside of the frame 60 in the direction along the mounting surface 51 . If the frame 60 has a rectangular shape when viewed from above toward the mounting surface 51 , the fitting portion 61 may be positioned by cutting out a portion of the frame 60 in the height direction. The part in the height direction may be a notch of 0.5 mm to 10 mm, for example. If the frame body 60 is U-shaped when viewed from above toward the mounting surface 51 , the fitting part 61 may be a portion where the member forming the frame body 60 does not exist. In other words, the fitting portion 61 may have a shape in which one side of the frame 60, which has a rectangular shape when viewed from above toward the mounting surface 51, is cut out entirely in the height direction. .

An insulating terminal made of an aluminum oxide sintered body, which electrically connects the inside and the outside of the wiring base 1 and the semiconductor element housing package 100 described above, is inserted and fixed into the fitting portion 61 . It is positioned to fit with the portion 61 . In other words, in the semiconductor element housing package 100, the wiring substrate 1 serves as an electrical input/output terminal.

<Structure of Semiconductor Device 1000>
A semiconductor device 1000 shown in FIG. 10 includes a semiconductor element housing package 100 and a semiconductor element 70 .

The semiconductor element 70 may be, for example, a laser diode (LD). Also, the semiconductor element 70 may be a photodiode (PD) or the like. In the case of an LD, a through hole 62 may be provided in the side wall of the frame 60 to attach the optical fiber.

Also, the lid 80 may be positioned at the upper end of the frame 60 to cover the semiconductor element housing package 100 . At this time, the lid body 60 may seal the semiconductor element housing package 100 . The lid body 80 has a rectangular shape in plan view, a size of 5 mm×10 mm to 50 mm×50 mm, and a thickness of 0.5 mm to 2 mm. The lid 80 is made of metal such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals, such as copper-tungsten alloy, copper-molybdenum alloy, iron-nickel-cobalt alloy. etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, the metal member constituting the lid body 80 can be manufactured.

The semiconductor device 1000 is manufactured by mounting the semiconductor element 70 on the mounting surface 51 of the semiconductor element housing package 100 and electrically connecting the semiconductor element 70 and the wiring substrate 1 with, for example, bonding wires.

As described above, the present invention is not limited to the above-described embodiments, and various modifications and the like are possible without departing from the gist of the present invention. Furthermore, all modifications and the like belonging to the claims are within the scope of the present invention.

1: wiring base 10: insulating base 11: insulating material 12: first surface 13: recess 14: recess 15: recess 20: wiring conductor 21: ground conductor 211: first region 212: second region 30: internal ground conductor 31 : First internal ground conductor 32 : Second internal ground conductor 323 : First part 33 : Third internal ground conductor 333 : Second part 34 : Through conductor 40 : Lead terminal 41 : Connection part 42 : Inclined part 50 : Substrate 51 : mounting surface 60: frame 61: fitting portion 62: through hole 70: semiconductor element 80: lid 100: package for storing semiconductor element 1000: semiconductor device

Claims (10)

an insulating substrate having a first surface and including an insulating material;
a wiring conductor positioned on the first surface;
a lead terminal connected to the wiring conductor and extending along a first direction;
an internal ground conductor located inside the insulating base,
The internal ground conductor is
a first internal ground conductor extending along the first surface and having a distance D1 from the first surface in a second direction orthogonal to the first surface;
a second internal ground conductor extending along the first surface and having a distance D2 from the first surface in the second direction greater than the distance D1;
The second internal ground conductor is
When viewed in a cross section orthogonal to the first plane and including the first direction,
A wiring substrate, wherein the second internal ground conductor and the wiring conductor are positioned to face each other in the second direction with the insulating material of the insulating substrate interposed therebetween, and have a first portion that overlaps the lead terminal. 2. The wiring substrate according to claim 1, wherein a length L1 of said first portion in a direction along said first direction is greater than 0 and equal to or less than 1/4 of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 3. The wiring substrate according to claim 1, wherein said distance D2 is greater than 0 and equal to or less than an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 1. A distance D3 from said first internal ground conductor to said second internal ground conductor in said second direction is 1/4 or less of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 4. The wiring substrate according to any one of 3. The internal ground conductor is
further comprising a third internal ground conductor extending parallel to the first surface and having a distance D4 from the first surface in the second direction greater than the distance D2;
The third internal ground conductor is
When viewed in a cross section orthogonal to the first plane and including the first direction,
In the second direction, the third internal ground conductor and the wiring conductor are positioned facing each other with the insulating material of the insulating base interposed therebetween and have a second portion overlapping the lead terminal. Item 5. The wiring substrate according to any one of items 4. 6. The wiring substrate according to claim 5, wherein a length L2 of said second portion in a direction along said first direction is greater than 0 and equal to or less than 1/4 of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 7. The wiring substrate according to claim 5, wherein said distance D4 is greater than 0 and equal to or less than the effective wavelength at the frequency of the signal transmitted by said wiring conductor. 5. The distance D5 from the second internal ground conductor to the third internal ground conductor in the second direction is 1/4 or less of the effective wavelength at the frequency of the signal transmitted by the wiring conductor. 8. The wiring substrate according to any one of 7. The wiring substrate according to any one of claims 1 to 8,
a substrate having a mounting surface;
a frame positioned surrounding the mounting surface,
The frame body has a fitting portion penetrating inside and outside in a direction along the mounting surface,
The wiring substrate is a package for housing a semiconductor element, which is positioned so as to be fitted with the fitting portion. A package for housing a semiconductor element according to claim 9;
and a semiconductor element positioned on the mounting surface and connected to the wiring conductor.

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