JP6642726B2 - Magnetoresistive device - Google Patents

Description

  The present invention relates to a magneto-resistance effect device using a magneto-resistance effect element.

  In recent years, with the advancement of functions of mobile communication terminals such as mobile phones, the speed of wireless communication has been increased. Since the communication speed is proportional to the bandwidth of the frequency used, the frequency band required for communication is increasing, and accordingly, the number of high-frequency filters required for mobile communication terminals is increasing. In recent years, spintronics has been studied as a field that can be applied to new high-frequency components, and one of the phenomena attracting attention is a spin torque resonance phenomenon by a magnetoresistive element ( Non-Patent Document 1). By supplying an alternating current to the magnetoresistive element, spin torque resonance can be caused in the magnetoresistive element, and the resistance value of the magnetoresistive element periodically oscillates at a frequency corresponding to the spin torque resonance frequency. The spin torque resonance frequency of the magnetoresistive element changes depending on the strength of the magnetic field applied to the magnetoresistive element, and the resonance frequency is generally in a high frequency band of several to several tens of GHz.

Nature, Vol. 438, no. 7066, p. 339-342, 17 November 2005

  The magnetoresistive effect element may be applied to a high-frequency device using a spin torque resonance phenomenon, but a specific configuration for application to a high-frequency device such as a high-frequency filter has not been shown. An object of the present invention is to provide a magnetoresistive device that can realize a high-frequency device such as a high-frequency filter using a magnetoresistive element.

  In order to achieve the above object, a magnetoresistive device according to the present invention comprises a first magnetoresistive element, a second magnetoresistive element, a first port to which a high-frequency signal is input, and a high-frequency signal. A second port to be output, a signal line, and a DC application terminal, wherein the first port, the first magnetoresistive element, and the second port are arranged in this order via the signal line. The second magnetoresistive element is connected in series, the second magnetoresistive element is connected to the signal line in parallel with the second port, and the first magnetoresistive element and the second magnetoresistive element are It has a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween. The first magnetoresistance effect element and the second magnetoresistance effect element are inputted from the DC application terminal and the 1 magnetoresistance effect The relationship between the direction of the direct current flowing through each of the element and the second magnetoresistive element and the arrangement order of each of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the first magnetic field. The resistance effect element and the second magnetoresistance effect element are formed so as to be the same, and the spin torque resonance frequency of the first magnetoresistance effect element and the spin torque resonance frequency of the second magnetoresistance effect element are different. They are different from each other.

    According to another aspect of the present invention, there is provided a magnetoresistive device including a first magnetoresistive element, a second magnetoresistive element, a first port to which a high-frequency signal is input, and a high-frequency signal. A second port through which a signal is output, a signal line, a DC application terminal capable of applying a DC current or a DC voltage to the magnetoresistive element, and a reference potential terminal; The first magnetoresistive element and the second port are connected in series in this order via the signal line, and the second magnetoresistive element is connected to the signal line in parallel with the second port. The first magnetoresistive element and the second magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween, and the first magnetoresistance effect element The element and the second The magnetoresistive effect element is connected to the DC application terminal and the reference potential terminal such that one end side is the DC application terminal side and the other end side is the reference potential terminal side, and the first In the magnetoresistive element and the second magnetoresistive element, the relationship between the direction from the one end side to the other end side and the direction from each magnetization free layer to the magnetization fixed layer is the same. The first magnetoresistive element and the second magnetoresistive element are formed to be the same, and the spin torque resonance frequency of the first magnetoresistive element and the spin torque of the second magnetoresistive element are changed. The torque resonance frequencies are different from each other.

  ADVANTAGE OF THE INVENTION According to this invention, the magnetoresistive effect device which can implement | achieve a high frequency device, such as a high frequency filter using a magnetoresistive effect element, can be provided.

FIG. 1 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive effect device according to a first embodiment. 5 is a graph showing a relationship between a frequency and an attenuation of the magnetoresistive device according to the first embodiment. 5 is a graph showing a relationship between a frequency and an attenuation with respect to a direct current of the magnetoresistive effect device according to the first embodiment. 4 is a graph showing a relationship between frequency and attenuation with respect to the magnetic field strength of the magnetoresistive effect device according to the first embodiment. FIG. 4 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive effect device according to a second embodiment. FIG. 9 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive device according to a third embodiment. 9 is a graph showing a relationship between a frequency and an attenuation of the magnetoresistive device according to the third embodiment. FIG. 14 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive device according to a fourth embodiment. 14 is a graph showing the relationship between frequency and attenuation with respect to the magnetic field strength of the magnetoresistive device according to the fourth embodiment. FIG. 13 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive device according to a fifth embodiment. 14 is a graph showing the relationship between the frequency and the amount of attenuation of the magnetoresistive device according to the fifth embodiment. FIG. 14 is a schematic cross-sectional view illustrating a configuration of a magnetoresistive device according to a sixth embodiment. 14 is a graph showing a relationship between a frequency and an attenuation of a magnetoresistive device according to a sixth embodiment. 14 is a graph showing a relationship between frequency and attenuation with respect to DC current of the magnetoresistive effect device according to the sixth embodiment. 16 is a graph showing the relationship between frequency and attenuation with respect to the magnetic field strength of the magnetoresistive device according to the sixth embodiment. It is a cross section showing the composition of the magnetoresistance effect device concerning a 7th embodiment. It is a cross section showing the composition of the magnetoresistance effect device concerning an 8th embodiment. It is the graph which showed the relationship between the frequency and attenuation of the magnetoresistive effect device concerning 8th Embodiment. It is a cross section showing the composition of the magnetoresistive effect device concerning a 9th embodiment. 28 is a graph showing the relationship between the frequency and the attenuation of the magnetoresistive device according to the ninth embodiment. It is a cross section showing the composition of the magnetoresistive effect device concerning a 10th embodiment. 21 is a graph showing the relationship between the frequency and the amount of attenuation of the magnetoresistive device according to the tenth embodiment.

  Preferred embodiments for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The components described below include those that can be easily assumed by those skilled in the art, those that are substantially the same, and those that have an equivalent range. Further, the components described below can be appropriately combined. Further, various omissions, substitutions, or changes of the components can be made without departing from the spirit of the present invention.

(First embodiment)
FIG. 1 is a schematic sectional view of a magnetoresistive device 100 according to the first embodiment of the present invention. The magnetoresistance effect device 100 includes a magnetization fixed layer 102 (first magnetization fixed layer), a magnetization free layer 104 (first magnetization free layer), and a spacer layer 103 (first spacer layer) disposed therebetween. , The magnetization fixed layer 102 (second magnetization fixed layer), the magnetization free layer 104 (second magnetization free layer), and the spacers disposed therebetween. A second magnetoresistive element 101c having a layer 103 (second spacer layer); a first port 109a to which a high-frequency signal is input; a second port 109b to which a high-frequency signal is output; And a DC current input terminal 110 as an example of a DC application terminal. The first port 109a, the two first magnetoresistive elements 101a and 101b, and the second port 109b are connected in series in this order via the signal line 107. The second magnetoresistive element 101c is connected to the signal line 107 in parallel with the second port 109b. More specifically, the magnetoresistive device 100 has a reference potential terminal 114, and one end (the side of the magnetization free layer 104) of the second magnetoresistive device 101c is connected to two first magnetoresistive devices. The other end (on the magnetization fixed layer 102 side) of the second magnetoresistive element 101c is connected to the reference potential terminal 114, and is connected to the signal line 107 between 101a and 101b and the second port 109b. It can be connected to the ground 108 via the terminal 114. Ground 108 may be external to magnetoresistive device 100. The second magnetoresistive element 101c is connected in parallel with the second port 109b to a signal line 107 (first signal line) between the two first magnetoresistive elements 101a and 101b and the second port 109b. Connection to one of the signal lines 107 between the magnetoresistive elements 101a and 101b and the first port 109a or the signal line 107 between the first magnetoresistive elements 101a and 101b and the second port 109b) The DC current input terminal 110 is connected to a signal line 107 between the two first magnetoresistive elements 101 a and 101 b and the first port 109 a (the first magnetoresistive elements 101 a and 101 b and the first Signal line 107 between the first port 109a and the other signal line 107 between the first magnetoresistive elements 101a and 101b and the second port 109b). It is connected. The magnetoresistance effect device 100 is used with a reference potential terminal 114 connected to the ground 108 and a DC current source 112 connected to the DC current input terminal 110 and the ground 108. When the DC current source 112 is connected to the DC current input terminal 110 and the ground 108, the magnetoresistive effect device 100 includes two first magnetoresistive devices 101a and 101b, a second magnetoresistive device 101c, and a signal. A closed circuit including the line 107, the ground 108, and the DC current input terminal 110 can be formed.

  In the first magnetoresistance effect elements 101a and 101b, one end side (in this example, the magnetization free layer 104 side) is on the DC current input terminal 110 side, and the other end side (in this example, on the magnetization fixed layer 102 side). ) Are connected to the DC current input terminal 110 and the reference potential terminal 114 so that the reference potential terminal 114 is on the reference potential terminal 114 side. The second magnetoresistive element 101c has one end (in this example, the magnetization free layer 104) on the DC current input terminal 110 side and the other end (in this example, magnetization fixed layer 102) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistive device 100, the first magnetoresistive devices 101a and 101b and the second magnetoresistive device 101c are oriented from one end to the other end and from the respective magnetization free layers 104. The two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are formed (arranged) so as to have the same relationship with the direction toward the magnetization fixed layer 102. In this example, in each of the first and second magnetoresistance effect elements 101a and 101b and the second magnetoresistance effect element 101c, the direction from one end to the other end and the direction from the magnetization free layer 104 to the magnetization fixed layer 102 are changed. Is in the same direction.

  The first magnetoresistance effect element 101a is formed such that a DC current input from the DC current input terminal 110 flows in the first magnetoresistance effect element 101a from the magnetization free layer 104 to the magnetization fixed layer 102. (Placed). The first magnetoresistance effect element 101b is formed such that a direct current input from the direct current input terminal 110 flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the first magnetoresistance effect element 101b. (Placed). The second magnetoresistance effect element 101c is formed such that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101c from the magnetization free layer 104 to the magnetization fixed layer 102. (Placed). That is, in the magnetoresistive device 100, the direction of the DC current flowing through each of the first magnetoresistive device 101a, the first magnetoresistive device 101b, and the second magnetoresistive device 101c, The relationship between the arrangement order of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is the same for the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c. ing. Note that, in this specification, the direct current is a current whose direction does not change with time, and includes a current whose magnitude changes with time. In this specification, a DC voltage is a voltage whose direction does not change with time, and includes a voltage whose magnitude changes with time.

  Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other. In the magneto-resistance effect device 100, the spin torque resonance frequency of the second magneto-resistance effect element 101c is larger than the spin torque resonance frequency of the first magneto-resistance effect element 101a and the spin torque resonance frequency of the first magneto-resistance effect element 101b. Is higher or lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b.

  The first port 109a is an input port to which a high-frequency signal that is an AC signal is input, and the second port 109b is an output port to which a high-frequency signal is output. The high-frequency signal input to the first port 109a and the high-frequency signal output from the second port 109b are, for example, signals having a frequency of 100 MHz or more. The first magnetoresistive elements 101a and 101b are electrically connected to the signal line 107 via the upper electrode 105 and the lower electrode 106, respectively, and the second magnetoresistive element 101c is connected to the signal via the upper electrode 105. It is electrically connected to the line 107, and is electrically connected to the ground 108 via the lower electrode 106 and the reference potential terminal 114. After the high-frequency signal input from the first port 109a passes through the two first magnetoresistive elements 101a and 101b, a part of the high-frequency signal flows to the second magnetoresistive element 101c, Is output to the second port 109b. The attenuation (S21), which is the dB value of the power ratio (output power / input power) when the high-frequency signal passes from the first port 109a to the second port 109b, is measured by a high-frequency measuring device such as a network analyzer. Can be measured.

  The upper electrode 105 and the lower electrode 106 have a role as a pair of electrodes, and are arranged in the laminating direction of each layer constituting each magnetoresistive element via each magnetoresistive element. That is, the upper electrode 105 and the lower electrode 106 apply a signal (current) to each magnetoresistive element in a direction intersecting the plane of each layer constituting each magnetoresistive element, for example, constituting each magnetoresistive element. It has a function as a pair of electrodes for flowing in a direction (lamination direction) perpendicular to the surface of each layer to be formed. The upper electrode 105 and the lower electrode 106 are preferably made of Ta, Cu, Au, AuCu, Ru, or a film of any two or more of these materials. Each of the two first magnetoresistance effect elements 101a and 101b has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 via the upper electrode 105, and the other end (on the magnetization fixed layer 102 side). It is electrically connected to the signal line 107 via the lower electrode 106. The second magnetoresistance effect element 101 c has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 via the upper electrode 105, and the other end (on the magnetization fixed layer 102 side) has a lower electrode 106. Is electrically connected to the ground 108 via

  The ground 108 functions as a reference potential. It is preferable that the shapes of the signal line 107 and the ground 108 be defined as a microstrip line (MSL) type or a coplanar waveguide (CPW) type. When designing a microstrip line shape or a coplanar waveguide shape, the signal line width and the distance between grounds of the signal line 107 are designed so that the characteristic impedance of the signal line 107 and the impedance of the circuit system become equal. Can be a transmission line with little transmission loss.

  The DC current input terminal 110 is connected to the signal line 107 at a location opposite to the location where the second magnetoresistance effect element 101c is connected to the signal line 107 across the two first magnetoresistance effect elements 101a and 101b. Have been. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the two first magnetoresistive elements 101a and 101b and the first port 109a. By connecting the DC current source 112 to the DC current input terminal 110, a DC current is supplied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c in the respective laminating directions. It becomes possible to apply. Further, an inductor or a resistance element for cutting a high-frequency signal may be connected in series between the DC current input terminal 110 and the DC current source 112.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and is connected to the two first magnetoresistive elements 101a and 101b, the signal line 107, the second magnetoresistive element 101c, the ground 108, and the DC current input. A closed circuit including the terminal 110 is formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit. The DC current source 112 is configured by, for example, a combination circuit of a variable resistor and a DC voltage source, and is configured to be able to change the current value of the DC current. The DC current source 112 may be configured by a combination of a fixed resistor and a DC voltage source that can generate a constant DC current.

  The magnetic field applying mechanism 111 is disposed near the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c, and the two first magnetoresistive elements 101a and 101b and the second By applying a magnetic field (static magnetic field) to the magnetoresistive element 101c, the spin torque resonance frequency of each magnetoresistive element can be set. For example, the magnetic field applying mechanism 111 is configured of an electromagnet type or a strip line type that can variably control the intensity of an applied magnetic field by either voltage or current. Further, the magnetic field applying mechanism 111 may be configured by a combination of an electromagnet type or a strip line type and a permanent magnet that supplies only a constant magnetic field. Further, the magnetic field applying mechanism 111 may be arranged separately for each magnetoresistive element, and may have a structure in which the spin torque resonance frequency of each magnetoresistive element can be set independently. The magnetic field applying mechanism 111 changes the effective magnetic field in the magnetization free layer 104 by changing the magnetic field applied to each magnetoresistive element, thereby changing the spin torque resonance frequency of each magnetoresistive element.

The magnetization fixed layer 102 is made of a ferromagnetic material, and its magnetization direction is substantially fixed in one direction. The magnetization fixed layer 102 is preferably made of a high spin polarizability material such as Fe, Co, Ni, an alloy of Ni and Fe, an alloy of Fe and Co, or an alloy of Fe, Co, and B. Thereby, a high rate of change in magnetoresistance can be obtained. Further, the magnetization fixed layer 102 may be made of a Heusler alloy. Further, the thickness of the magnetization fixed layer 102 is preferably set to 1 to 10 nm. Further, an antiferromagnetic layer may be added so as to be in contact with the magnetization fixed layer 102 in order to fix the magnetization of the magnetization fixed layer 102. Alternatively, the magnetization of the magnetization fixed layer 102 may be fixed using magnetic anisotropy caused by a crystal structure, a shape, or the like. For the antiferromagnetic layer, FeO, CoO, NiO, CuFeS ₂ , IrMn, FeMn, PtMn, Cr or Mn can be used.

  The spacer layer 103 is arranged between the magnetization fixed layer 102 and the magnetization free layer 104, and the magnetization of the magnetization fixed layer 102 and the magnetization of the magnetization free layer 104 interact to obtain a magnetoresistance effect. The spacer layer 103 is formed of a layer formed of a conductor, an insulator, or a semiconductor, or a layer including a conductive point formed of a conductor in the insulator.

  When a non-magnetic conductive material is used as the spacer layer 103, the material includes Cu, Ag, Au, Ru, or the like, and a giant magnetoresistance (GMR) effect is exhibited in the magnetoresistance effect element. When the GMR effect is used, the thickness of the spacer layer 103 is preferably set to about 0.5 to 3.0 nm.

When a non-magnetic insulating material is used as the spacer layer 103, the material includes Al ₂ O ₃ or MgO, and a tunnel magneto-resistance (TMR) effect appears in the magneto-resistance effect element. By adjusting the thickness of the spacer layer 103 so that a coherent tunnel effect is generated between the magnetization fixed layer 102 and the magnetization free layer 104, a high magnetoresistance ratio can be obtained. When the TMR effect is used, the thickness of the spacer layer 103 is preferably set to about 0.5 to 3.0 nm.

When a non-magnetic semiconductor material is used for the spacer layer 103, the material includes ZnO, In ₂ O ₃ , SnO ₂ , ITO, GaO _x, Ga ₂ O _{x, and the} like. It is preferable to set it to about 4.0 nm.

When applying a layer comprising a conductive point constituted by the conductor of the non-magnetic insulator in a spacer layer 103, the nonmagnetic insulator during constituted by _Al 2 _{O 3} or MgO, CoFe, CoFeB, CoFeSi, CoMnGe, It is preferable to adopt a structure including a conduction point constituted by a conductor such as CoMnSi, CoMnAl, Fe, Co, Au, Cu, Al or Mg. In this case, the thickness of the spacer layer 103 is preferably about 0.5 to 2.0 nm.

  The magnetization free layer 104 can change its magnetization direction, and is made of a ferromagnetic material. The direction of magnetization of the magnetization free layer 104 can be changed by, for example, an externally applied magnetic field or spin-polarized electrons. When the magnetization free layer 104 is a material having an easy axis of magnetization in the in-plane direction of the film, examples of the material include CoFe, CoFeB, CoFeSi, CoMnGe, CoMnSi, and CoMnAl, and the thickness is about 1 to 30 nm. preferable. When the magnetization free layer 104 is made of a material having an easy axis of magnetization in the normal direction of the film surface, the material may be Co, a CoCr-based alloy, a Co multilayer film, a CoCrPt-based alloy, a FePt-based alloy, a SmCo-based alloy containing a rare earth element, or TbFeCo. Alloys and the like. Further, the magnetization free layer 104 may be made of a Heusler alloy. Further, a material having a high spin polarizability may be inserted between the magnetization free layer 104 and the spacer layer 103. This makes it possible to obtain a high magnetoresistance change rate. Examples of the high spin polarizability material include a CoFe alloy or a CoFeB alloy. It is preferable that both the CoFe alloy and the CoFeB alloy have a thickness of about 0.2 to 1.0 nm.

  Further, a cap layer, a seed layer, or a buffer layer may be provided between the upper electrode 105 and each magneto-resistance effect element and between the lower electrode 106 and each magneto-resistance effect element. Examples of the cap layer, the seed layer, or the buffer layer include Ru, Ta, Cu, Cr, and a stacked film thereof, and the thickness of these layers is preferably about 2 to 10 nm.

  When the shape of each magnetoresistive effect element is rectangular (including a square) in plan view, it is desirable that the long side be about 100 nm or less. When the shape in plan view is not a rectangle, the long side of the rectangle circumscribing the plan view shape with the minimum area is defined as the long side of each magnetoresistive element. When the long side is as small as about 100 nm, the magnetic domain of the magnetization free layer 104 can be made into a single magnetic domain, and a highly efficient spin torque resonance phenomenon can be realized. Here, the “planar shape” refers to a shape viewed on a plane perpendicular to the laminating direction of each layer constituting each magnetoresistive element.

  Here, the spin torque resonance phenomenon will be described.

  When a high frequency signal having the same frequency as the intrinsic spin torque resonance frequency of the magnetoresistive element is input to the magnetoresistive element, the magnetization of the magnetization free layer vibrates at the spin torque resonance frequency. This phenomenon is called a spin torque resonance phenomenon. The element resistance of the magnetoresistive element is determined by the relative angle of magnetization between the magnetization fixed layer and the magnetization free layer. Therefore, the resistance value of the magnetoresistive element at the time of spin torque resonance changes periodically with the oscillation of the magnetization of the magnetization free layer. That is, the magnetoresistance effect element can be treated as a resistance oscillation element whose resistance value periodically changes at the spin torque resonance frequency.

  A high-frequency signal having the same frequency as the spin torque resonance frequency is applied to each magnetoresistive element while applying a direct current flowing in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in each magnetoresistive element. , The resistance of each magnetoresistive element changes periodically at the spin torque resonance frequency in the same phase as the input high-frequency signal, and the impedance for the high-frequency signal decreases. That is, in the magnetoresistive device 100, the two first magnetoresistive devices 101a and 101b and the second magnetoresistive device 101c reduce the impedance of the high-frequency signal at the spin torque resonance frequency due to the spin torque resonance phenomenon. It can be handled as a resistance element.

The spin torque resonance frequency changes depending on the effective magnetic field in the magnetization free layer 104. The effective magnetic field H _eff in the magnetization free layer 104 includes an external magnetic field H _E applied to the magnetization free layer 104, an anisotropic magnetic field H _{k in} the magnetization free layer 104, a demagnetizing field H _{D in} the magnetization free layer 104, and the magnetization free layer 104. Using the exchange coupling magnetic field H _EX at
H _eff = H _E + H _k + H _D + H _EX
It is represented by Magnetic field applying mechanism 111, by two first magnetoresistance effect elements 101a, a magnetic field is applied to 101b and second magnetoresistive elements 101c, applying an external magnetic field _{H E} to each magnetization free layer 104, the This is an effective magnetic field setting mechanism that can set the effective magnetic field H _eff in the magnetization free layer 104. The magnetic field applying mechanism 111, which is an effective magnetic field setting mechanism, changes the magnetic field applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c, thereby changing the effective magnetic layer in each magnetization free layer 104. By changing the magnetic field, it is possible to change the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. As described above, when the magnetic field applied to the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c is changed, the first magnetoresistance effect elements 101a and 101b are changed. And the spin torque resonance frequency of each of the second magnetoresistive elements 101c changes.

  In addition, when a DC current is applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c during spin torque resonance, the spin torque increases and the amplitude of the oscillating resistance value increases. Increase. As the amplitude of the oscillating resistance value increases, the amount of change in the element impedance of each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c increases. Also, when the current density of the applied direct current is changed, the spin torque resonance frequency changes. Therefore, the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c can be changed by changing the magnetic field from the magnetic field applying mechanism 111 or from the DC current input terminal 110. Can be changed by changing the applied direct current. The current density of the DC current applied to each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is preferably smaller than the respective oscillation threshold current densities. With the oscillation threshold current density of the magnetoresistive element, the magnetization of the magnetization free layer of the magnetoresistive element starts precession at a constant frequency and a constant amplitude by applying a DC current having a current density higher than this value. The threshold current density at which the magnetoresistive element oscillates (the output (resistance value) of the magnetoresistive element fluctuates at a constant frequency and a constant amplitude).

  Considering that a DC current having the same magnetic field and the same current density is applied to the magnetoresistive element, as the aspect ratio of the magnetoresistive element in a plan view increases, the spin torque resonance of the magnetoresistive element increases. The frequency will be higher. Here, the “aspect ratio in plan view shape” refers to the ratio of the length of the long side to the length of the short side of the rectangle circumscribing the shape of the magnetoresistive element in plan view with the minimum area. For example, the first magnetoresistive element 101a, the first magnetoresistive element 101b, and the second magnetoresistive element 101c have the same film configuration and have a rectangular shape in plan view, but are rectangular in plan view. By making the shape aspect ratios different from each other, the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the spin torque resonance frequency of the second magnetoresistance effect element 101c are increased. The spin torque resonance frequencies can be different from each other. Here, “the film configuration is the same” means that the materials and the film thicknesses of the respective layers constituting the magnetoresistive effect element are the same, and that the layers are stacked in the same order.

  Due to the spin torque resonance phenomenon, a frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency component of the high frequency signal input from the first port 109a Pass through the first magnetoresistive element 101a in a low impedance state, and are easily output to the second port 109b. On the other hand, the high frequency component of the high frequency signal that is not near the spin torque resonance frequency of the first magnetoresistive element 101a is connected to the second port 109b by the first magnetoresistive element 101a in a high impedance state. It becomes difficult to output. Similarly, in the high-frequency component of the high-frequency signal input from the first port 109a, the frequency component that matches the spin torque resonance frequency of the first magnetoresistance effect element 101b or is close to the spin torque resonance frequency is low. It easily passes through the first magnetoresistance effect element 101b in an impedance state and is output to the second port 109b, and is not close to the spin torque resonance frequency of the first magnetoresistance effect element 101b in the high-frequency component of the high-frequency signal. The frequency component is less likely to be output to the second port 109b by the first magneto-resistance effect element 101a in the high impedance state.

  Further, due to the spin torque resonance phenomenon, the second magnetoresistance effect in the high frequency components of the high frequency signal input from the first port 109a (the high frequency signal passing through the two first magnetoresistance elements 101a and 101b). A frequency component that matches or is close to the spin torque resonance frequency of the element 101c passes through the low impedance second magnetoresistance effect element 101c connected in parallel to the second port 109b. And flows to the ground 108, and becomes difficult to be output to the second port 109b. On the other hand, a frequency component that is not near the spin torque resonance frequency of the second magnetoresistance effect element 101c among the high frequency components of the high frequency signal is cut off from the ground 108 by the second magnetoresistance effect element 101c in the high impedance state. 2 is easily output to the port 109b.

  FIG. 2 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 100 and the amount of attenuation. The vertical axis in FIG. 2 represents the attenuation, and the horizontal axis represents the frequency. The plot line 220 in FIG. 2 is a graph when the magnetic field applied to the first magnetoresistance effect elements 101a and 101b and the second magnetoresistance effect element 101c is constant and the applied DC current is constant. is there. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c. Frequency. In FIG. 2, the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. An example is shown.

  2, a band near the spin torque resonance frequency of the first magnetoresistance effect element 101a and a band near the spin torque resonance frequency of the first magnetoresistance effect element 101b are passbands. Becomes Further, the second magnetoresistance effect element 101c allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the lower frequency side (lower than the above passband). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the second magnetoresistive element 101c where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the passband formed near the spin torque resonance frequency of the resistance effect element 101a and near the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive device 100 in this case functions as a bandpass filter having a steep shoulder characteristic on the low frequency side of the passband, as shown by the plot line 220 in FIG. In this case, the change in the amount of attenuation of the high-frequency signal with respect to the frequency is sharp near the spin torque resonance frequency of the second magnetoresistance effect element 101c. It is preferable to match the lower limit frequency of the pass band used.

  Similarly, when the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. The device 100 functions as a bandpass filter having a steep shoulder characteristic on the high frequency side of the passband. In this case, it is preferable that the spin torque resonance frequency of the second magnetoresistive element 101c is made to coincide with the upper limit frequency of the pass band to be used.

  3 and 4 are graphs showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 100 and the amount of attenuation. 3 and 4, the vertical axis represents the attenuation, and the horizontal axis represents the frequency. FIG. 3 is a graph when the magnetic field applied to the two first magnetoresistance elements 101a and 101b and the second magnetoresistance element 101c is constant. A plot line 131 in FIG. 3 is obtained when the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia1. The plot line 132 is obtained when the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia2. The relationship between the DC current values at this time is Ia1 <Ia2. FIG. 4 is a graph when the DC current applied to the two first magnetoresistance effect elements 101a and 101b and the second magnetoresistance effect element 101c is constant. A plot line 141 in FIG. 4 is obtained when the magnetic field intensity applied from the magnetic field applying mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb1. A line 142 is when the magnetic field intensity applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the magnetic field applying mechanism 111 is Hb2. The relationship of the magnetic field strength at this time is Hb1 <Hb2.

  For example, as shown in FIG. 3, the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is increased from Ia1 to Ia2. In this case, the amount of change in the element impedance of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c at a frequency near the spin torque resonance frequency increases with a change in the current value. The output from the second port 109b in a band near the spin torque resonance frequency of the first magnetoresistive element 101a and in a band (pass band) near the spin torque resonance frequency of the first magnetoresistive element 101b. The high-frequency signal to be transmitted is further increased, and the passage loss is reduced. At the same time, in a band near the spin torque resonance frequency of the second magnetoresistance effect element 101c, the high-frequency signal output from the second port 109b is further reduced. Therefore, the magnetoresistive effect device 101 can realize a high-frequency filter having a wide range of cutoff characteristics and pass characteristics and further having a steep shoulder characteristic. When the DC current value is increased from Ia1 to Ia2, the spin torque resonance frequency of the first magnetoresistance effect element 101a changes from fd1 to fd2, and the spin torque resonance frequency of the first magnetoresistance effect element 101b changes from fe1 to fe2. The spin torque resonance frequency of the second magnetoresistive element 101c shifts from fg1 to fg2. That is, the pass band shifts to the lower frequency side. That is, the magnetoresistance effect device 100 can also function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the pass band.

Further, for example, as shown in FIG. 4, when the magnetic field intensity applied from the magnetic field applying mechanism 111 is increased from Hb1 to Hb2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fh1 to fh2, The spin torque resonance frequency of the first magnetoresistance effect element 101b shifts from fi1 to fi2, and the spin torque resonance frequency of the second magnetoresistance effect element 101c shifts from fj1 to fj2. That is, the pass band shifts to the higher frequency side. Also, changing the magnetic field strength (effective magnetic field H _eff in the magnetization free layer 104) can shift the passband to a greater extent than changing the DC current value. That is, the magnetoresistive device 100 can function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the pass band.

Note that, as the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to each magnetoresistive element increases, the amplitude of the oscillating resistance value of each magnetoresistive element decreases. As the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to the resistance effect element is increased, it is preferable to increase the current density of the DC current applied to each magneto-resistance effect element.

  Further, in the magnetoresistive device 100, the number of the first magnetoresistive devices may be one (one of the first magnetoresistive devices 101a and 101b).

  As described above, the magnetoresistive device 100 includes two first magnetoresistive devices 101a and 101b, a second magnetoresistive device 101c, a first port 109a to which a high-frequency signal is input, and a high-frequency signal. Is output, a signal line 107, and a DC current input terminal 110 (DC application terminal). The first port 109a, the two first magnetoresistive elements 101a, 101b, and The second port 109b is connected in series in this order via the signal line 107, and the second magnetoresistive element 101c is connected to the signal line 107 in parallel with the second port 109b and the two first The magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are respectively provided with a magnetization fixed layer 102, a magnetization free layer 104, and a space between them. The first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c have one end on the DC current input terminal 110 (DC application terminal) side. The first and second magnetoresistive elements 101a and 101b and the second magnetoresistive element are connected to the DC current input terminal 110 (DC applying terminal) and the reference potential terminal 114 such that the other end is on the reference potential terminal 114 side. 101c indicates the relationship between the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102. The first magnetoresistance effect elements 101a and 101b and the second magnetic field The resistance effect element 101c is formed to be the same. Further, the first magnetoresistance effect element 101a is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the first magnetoresistance effect element 101a. The first magnetoresistive element 101b is formed so that a direct current input from a direct current input terminal 110 (direct current application terminal) flows through the first magnetoresistive element 101b. The second magnetoresistance effect element 101c is formed so as to flow in the direction from the layer 104 to the magnetization fixed layer 102, and the DC current input from the DC current input terminal 110 (DC application terminal) is applied to the second magnetoresistance effect element. The first magnetoresistance effect element 101a is formed so as to flow in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the element 101c. Spin torque resonance frequencies of the magnetoresistive element 101c is different from each other, the spin torque resonant frequency of the spin torque resonant frequency and the second magnetoresistance effect element 101c of the first magnetoresistive element 101b are different each other.

  Therefore, when a high-frequency signal is input from the first port 109a to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c via the signal line 107, the two first magnetoresistive elements 101a and 101b are connected to each other. Spin torque resonance can be induced in the magnetoresistance effect elements 101a and 101b and the second magnetoresistance effect element 101c. At the same time as the spin torque resonance, a DC current flows from the first magnetization free layer to the first magnetization fixed layer in the two first magnetoresistance elements 101a and 101b, so that the first magnetoresistance The element impedance of the first magnetoresistive element 101a at the same frequency as the spin torque resonance frequency of the effect element 101a decreases, and the first magnetoresistance effect at the same frequency as the spin torque resonance frequency of the first magnetoresistive element 101b. The element impedance of the element 101b decreases. Similarly, at the same time as the spin torque resonance, a DC current flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the second magnetoresistance effect element 101c, so that the spin torque of the second magnetoresistance effect element 101c is increased. The element impedance of the second magnetoresistance effect element 101c for the same frequency as the resonance frequency decreases.

  Since the first port 109a, the two first magnetoresistive elements 101a and 101b, and the second port 109b are connected in series in this order, the first magnetoresistive elements 101a and 101b transmit high-frequency signals. The second port 109b can be cut off at a non-resonant frequency in an impedance state, and can be passed to the second port 109b at a resonance frequency in a low impedance state of the first magnetoresistive elements 101a and 101b. Furthermore, since the second magneto-resistance effect element 101c is connected to the signal line 107 in parallel with the second port 109b, the second magneto-resistance effect element 101c is in a low impedance state. At the resonance frequency, the second port 109b can be cut off, and at the non-resonance frequency where the second magnetoresistive element 101c is in a high impedance state, it can pass through the second port 109b. As described above, the magnetoresistance effect device 100 converts the high frequency signal input from the first port 109a into a frequency near the spin torque resonance frequency of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b. Can be passed to the second port 109b side at a frequency near the spin torque resonance frequency, and can be passed to the second port 109b at a frequency near the spin torque resonance frequency of the second magnetoresistance effect element 101c. Can be shut off. That is, the magnetoresistive effect device 100 has the maximum value of the amount of passing of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. At the spin torque resonance frequency of the magnetoresistive effect element 101c, and functions as a high frequency filter.

  In the magnetoresistance effect device 100, a band near the spin torque resonance frequency of the first magnetoresistance effect element 101a or a band near the spin torque resonance frequency of the first magnetoresistance effect element 101b is a passband. Since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is the first Since the spin torque resonance frequency is higher or lower than the spin torque resonance frequency of the magneto-resistance effect element 101a), the high-frequency signal is cut off to the second port on the high frequency side or the low frequency side of the first magneto-resistance effect element 101a. can do. Further, since the spin torque resonance frequency of the first magnetoresistance effect element 101b and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is High frequency signal is higher or lower than the spin torque resonance frequency of the first magnetoresistive element 101b), so that the high frequency signal is supplied to the second port on the high frequency side or the low frequency side of the first magnetoresistance effect element 101b. Can be blocked. In the vicinity of the spin torque resonance frequency of the second magnetoresistive element 101c where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristic on the high frequency side or the low frequency side of the pass band formed near the spin torque resonance frequency of the resistance effect element 101a or near the spin torque resonance frequency of the first magnetoresistance effect element 101b can be sharpened. Will be possible. That is, the magnetoresistive effect device 100 can function as a bandpass filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the passband.

  Further, the magnetoresistive device 100 has two first magnetoresistive devices 101a and 101b having different spin torque resonance frequencies, and the second magnetoresistive device 101c has two spin torque resonance frequencies. It has a wide pass band because it is higher than the spin torque resonance frequency of each of the first magnetoresistive elements 101a and 101b or lower than the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b. It is possible to function as a band-pass filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the band.

  Further, in order to increase the range of the cutoff characteristic and the pass characteristic and to sharpen the shoulder characteristic, the magnetization free layer 104 has an easy axis of magnetization in the normal direction of the film surface, and the magnetization fixed layer 102 has the magnetization in the direction of the film surface. It is preferable to have a configuration having an easy axis.

  Further, by changing the DC current applied from the DC current input terminal 110, the spin torque resonance frequencies of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are variably controlled. Therefore, the magnetoresistive effect device 100 can also function as a frequency variable filter.

  Further, the magnetoresistance effect device 100 has a magnetic field application mechanism 111 as a frequency setting mechanism capable of setting the spin torque resonance frequency of the two first magnetoresistance elements 101a and 101b and the second magnetoresistance element 101c. Therefore, the spin torque resonance frequencies of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c can be set to any frequencies. Therefore, the magnetoresistance effect device 100 can function as a filter in an arbitrary frequency band.

  Further, in the magnetoresistive effect device 100, the magnetic field applying mechanism 111 is an effective magnetic field setting mechanism capable of setting an effective magnetic field in the magnetization free layer 104. Since the spin torque resonance frequencies of the resistance effect elements 101a and 101b and the second magnetoresistance effect element 101c can be changed, it becomes possible to function as a frequency variable filter.

  Further, in the above description, an example has been described in which the two first magnetoresistive elements 101a and 101b are connected in series with each other. However, three or more first magnetoresistive elements may be provided. Further, a plurality of first magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, the first port 109a, each of the first magnetoresistive elements and the second port 109b are connected in series in this order via the signal line 107. Similar to the magnetoresistive effect device 100, it can have frequency characteristics as a high frequency filter.

  In the above description, the second magnetoresistive element 101c is connected in parallel to the second port 109b to the signal line 107 between the first magnetoresistive element 101b and the second port 109b. In the example described above, the DC current input terminal 110 is connected to the signal line 107 between the first magneto-resistance effect element 101a and the first port 109a, but the second magneto-resistance effect element 101c Is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a in parallel with the second port 109b, and the DC current input terminal 110 is connected to the first magnetoresistive element. It may be connected to the signal line 107 between the effect element 101b and the second port 109b. More specifically, one end of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the second magnetoresistance effect element 101c May be connected to the reference potential terminal 114 to be connected to the ground 108 via the reference potential terminal 114.

  In addition, when the DC current input from the DC current input terminal 110 is equal to or larger than a certain value, the magnetoresistance effect device 100 controls the spin torque resonance frequency of the first magnetoresistance effect element 101a and the first magnetoresistance effect element. At the spin torque resonance frequency of 101b, the output power output from the second port 109b is set to be larger than the input power of the high frequency signal input from the first port 109a (the attenuation is set to 0 dB or more). I can do it. That is, the magnetoresistance effect device 100 can also function as an amplifier (amplifier).

(Second embodiment)
FIG. 5 is a schematic sectional view of a magnetoresistive effect device 200 according to the second embodiment of the present invention. In the magnetoresistive device 200, the points different from the magnetoresistive device 100 of the first embodiment will be mainly described, and the common items will not be described. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements will be omitted. The magnetoresistive device 200 has an inductor 113 and a reference potential terminal 115 in addition to the components of the magnetoresistive device 100 of the first embodiment. The inductor 113 is connected in parallel with the second port 109b to the signal line 107 (the first magnetoresistance effect element 101a, 101b) between the two first magnetoresistance effect elements 101a, 101b and the first port 109a. Signal line 107 between the first port 101b and the first port 109a, or one of the signal lines 107 between the first magnetoresistive elements 101a and 101b and the second port 109b), and a reference potential terminal. It is connected to the ground 115 via the reference potential terminal 115. The DC current input terminal 110 is connected to the signal line 107 between the two first magnetoresistive elements 101a and 101b and the second port 109b (the first magnetoresistive elements 101a and 101b and the first port 109a are connected to each other). (The other of the signal lines 107 between the first magnetoresistive elements 101a and 101b and the second port 109b). The second magnetoresistive element 101c is connected to the signal line 107 of the inductor 113 in parallel with the second port 109b with at least one of the two first magnetoresistive elements 101a and 101b interposed therebetween. Is connected to the signal line 107 on the opposite side of the signal line 107. More specifically, one end (on the side of the magnetization free layer 104) of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101b and the second port 109b. The other end (the magnetization fixed layer 102 side) of the second magnetoresistive element 101c is connected to a reference potential terminal 114 and can be connected to the ground 108 via the reference potential terminal 114. When the DC current source 112 is connected to the DC current input terminal 110 and the ground 108, the magnetoresistive effect device 200 includes the two first magnetoresistive elements 101a and 101b, the signal line 107, the inductor 113, the ground 108, and A closed circuit including the DC current input terminal 110 and a closed circuit including the second magnetoresistive element 101c, the signal line 107, the ground 108, and the DC current input terminal 110 can be formed.

  In the first magnetoresistance effect elements 101a and 101b, one end side (in this example, the magnetization free layer 104 side) is on the DC current input terminal 110 side, and the other end side (in this example, on the magnetization fixed layer 102 side). ) Is connected to the DC current input terminal 110 and the reference potential terminal 115 so that the reference potential terminal 115 is on the reference potential terminal 115 side. The second magnetoresistive element 101c has one end (in this example, the magnetization free layer 104) on the DC current input terminal 110 side and the other end (in this example, magnetization fixed layer 102) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistive device 200, the first magnetoresistive devices 101a and 101b and the second magnetoresistive device 101c are oriented from one end to the other end and from the respective magnetization free layers 104. The two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are formed (arranged) so as to have the same relationship with the direction toward the magnetization fixed layer 102.

  The first magnetoresistance effect element 101a is connected to the signal line 107 such that the magnetization fixed layer 102 side is on the first port 109a side, and the DC current input from the DC current input terminal 110 is applied to the first magnetoresistance element 101a. It is formed (arranged) so as to flow in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the effect element 101a. The first magnetoresistance effect element 101b is connected to the signal line 107 such that the magnetization fixed layer 102 side is on the first port 109a side, and a DC current input from the DC current input terminal 110 is applied to the first magnetoresistance element 101b. It is formed (arranged) so as to flow in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the effect element 101b. That is, in the magnetoresistance effect device 200, the direction of the DC current flowing in each of the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c, and the magnetization of each The relationship between the arrangement of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is the same for the first magnetoresistive element 101a, the first magnetoresistive element 101b, and the second magnetoresistive element 101c. ing. Other configurations of the magnetoresistive device 200 are the same as those of the magnetoresistive device 100 of the first embodiment.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and includes a closed circuit including the two first magnetoresistive elements 101a and 101b, the signal line 107, the inductor 113, the ground 108, and the DC current input terminal 110. Is formed. Further, a closed circuit including the second magnetoresistance effect element 101c, the signal line 107, the ground 108, and the DC current input terminal 110 is formed.

  The inductor 113 is connected between the signal line 107 and the ground 108 and has a function of cutting a high-frequency component of the current by the inductor component and passing an invariant component of the current. The inductor 113 may be either a chip inductor or an inductor using a pattern line. Further, a resistance element having an inductor component may be used. It is preferable that the inductance value of the inductor 113 is 10 nH or more. The two inductors 113a and 101b, the signal line 107, the inductor 113, A DC current applied from the DC current input terminal 110 can flow through a closed circuit including the ground 108 and the DC current input terminal 110.

  In the above description, the second magnetoresistive element 101c is connected in parallel to the second port 109b to the signal line 107 between the first magnetoresistive element 101b and the second port 109b. In the example described above, the DC current input terminal 110 is connected to the signal line 107 between the first magneto-resistance effect element 101b and the second port 109b, but the second magneto-resistance effect element 101c One of the DC current input terminal 110 and the DC current input terminal 110 may be connected to the signal line 107 between the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b.

  The magnetoresistive device 200 can have frequency characteristics as a high-frequency filter, similar to the magnetoresistive device 100 of the first embodiment.

In the magnetoresistive device 100 according to the first embodiment and the magnetoresistive device 200 according to the second embodiment, in order to further increase the passband and sharpen the shoulder characteristics, the shoulder characteristics must be sharpened. It is preferable that the Q value of the magnetoresistive element 101c is larger than the Q value of at least one of the first magnetoresistive element 101a and the first magnetoresistive element 101b forming the pass band. Here, the Q value means that the absolute value of the impedance of the magnetoresistive element decreases or increases by 3 dB from the absolute value of the impedance at the spin torque resonance frequency f0 of the magnetoresistive element, and the frequencies f1 and f2 ( f1 <f2),
Q = f0 / (f2-f1)
It is represented by Since the Q value of the magnetoresistive element at the time of spin torque resonance is proportional to the current density of the direct current applied to the magnetoresistive element, for example, the first magnetoresistive element 101a and the first magnetoresistive element When the first magnetoresistive element 101c and the second magnetoresistive element 101c are connected in series with each other, the area of the second magnetoresistive element 101c in plan view is changed to the first magnetoresistive element 101a (first magnetic element). By making the area of the resistive effect element 101b) smaller than the area of the planar shape, the Q value of the second magnetoresistive effect element 101c can be changed to the first magnetoresistive effect element 101a (first magnetoresistive effect element 101b). It can be larger than the Q value.

(Third embodiment)
FIG. 6 is a schematic sectional view of a magnetoresistive effect device 300 according to the third embodiment of the present invention. In the magnetoresistive device 300, the points different from the magnetoresistive device 100 of the first embodiment will be mainly described, and the common items will not be described. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements will be omitted. The magnetoresistance effect device 300 includes a magnetization fixed layer 102 (first magnetization fixed layer), a magnetization free layer 104 (first magnetization free layer), and a spacer layer 103 (first spacer layer) disposed therebetween. , A magnetization fixed layer 102 (second magnetization free layer), a magnetization free layer 104 (second magnetization free layer), and a spacer layer 103 (second Two second magnetoresistive elements 101c and 101d having two spacer layers), a first port 109a for inputting a high-frequency signal, a second port 109b for outputting a high-frequency signal, and a signal line 107. And a DC current input terminal 110. The first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order via the signal line 107. The two second magnetoresistive elements 101c and 101d are connected in series with each other, and the two second magnetoresistive elements 101c and 101d connected in series signal in parallel to the second port 109b. It is connected to the line 107. Like the second magnetoresistance effect element 101c, the second magnetoresistance effect element 101d is provided between the first magnetoresistance effect element 101a and the second port 109b in parallel with the second port 109b. Is connected to the signal line 107. More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101a and the second port 109b, The magnetization fixed layer 102 side of the resistance effect element 101d is connected to the reference potential terminal 114 and can be connected to the ground 108 via the reference potential terminal 114.

  Similarly to the second magnetoresistance effect element 101c, the second magnetoresistance effect element 101d has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side and the other end side (this side). The DC current input terminal 110 and the reference potential terminal 114 are connected such that the magnetization fixed layer 102 side (in the example, the magnetization fixed layer 102 side) is on the reference potential terminal 114 side. Is formed (arranged) so as to flow in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the magnetoresistance effect element 101d. That is, in the magnetoresistive effect device 300, the first magnetoresistive effect element 101a and the two second magnetoresistive effect elements 101c and 101d are oriented from one end to the other end, and each magnetization free layer is formed. The first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d are formed (arranged) so that the relationship from 104 to the magnetization fixed layer 102 is the same. In the magnetoresistive device 300, the direction of the direct current flowing in each of the first magnetoresistive device 101a and the two second magnetoresistive devices 101c and 101d, the magnetization fixed layer 102, the spacer The relationship between the arrangement order of the layer 103 and the magnetization free layer 104 is the same for the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d.

  Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the spin torque resonance frequency of the second magnetoresistance effect element 101d are different from each other. In the magneto-resistance effect device 300, the spin torque resonance frequency of the first magneto-resistance effect element 101a is larger than the spin torque resonance frequency of the second magneto-resistance effect element 101c and the spin torque resonance frequency of the second magneto-resistance effect element 101d. Is higher or lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d.

  After the high-frequency signal input from the first port 109a passes through the first magneto-resistance effect element 101a, a part of the high-frequency signal flows to the two second magneto-resistance effect elements 101c and 101d, and Is output to the second port 109b.

  One end (on the magnetization free layer 104 side) of the second magnetoresistive element 101d is electrically connected to the signal line 107 (second magnetoresistive element 101c) via the upper electrode 105, and the other end (magnetization fixed). The layer 102 is electrically connected to the ground 108 via the lower electrode 106 and the reference potential terminal 114.

  The DC current input terminal 110 is connected to the signal line 107 on the opposite side of the connection point of the two second magnetoresistive elements 101c and 101d to the signal line 107 across the first magnetoresistive element 101a. Have been. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a. By connecting the DC current source 112 to the DC current input terminal 110, a DC current can be applied to the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and is connected to the first magnetoresistive element 101a, the signal line 107, the two second magnetoresistive elements 101c and 101d, the ground 108, and the DC current input. A closed circuit including the terminal 110 is formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit.

  The magnetic field applying mechanism 111 is disposed near the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d. By applying a magnetic field to the effect elements 101c and 101d, the spin torque resonance frequency of each magnetoresistive element can be set.

  Other configurations of the magnetoresistive device 300 are the same as those of the magnetoresistive device 100 of the first embodiment.

  Due to the spin torque resonance phenomenon, a frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency component of the high frequency signal input from the first port 109a Pass through the first magnetoresistive element 101a in a low impedance state, and are easily output to the second port 109b. On the other hand, the high frequency component of the high frequency signal that is not near the spin torque resonance frequency of the first magnetoresistive element 101a is connected to the second port 109b by the first magnetoresistive element 101a in a high impedance state. It becomes difficult to output.

  Further, due to the spin torque resonance phenomenon, the spin of the second magnetoresistive element 101c in the high-frequency components of the high-frequency signal input from the first port 109a (the high-frequency signal passed through the first magnetoresistive element 101a). A frequency component that matches the torque resonance frequency or is near the spin torque resonance frequency passes through the low impedance second magnetoresistive element 101c connected in parallel to the second port 109b to the ground 108. Flow and output to the second port 109b becomes difficult. On the other hand, a frequency component that is not near the spin torque resonance frequency of the second magnetoresistance effect element 101c among the high frequency components of the high frequency signal is cut off from the ground 108 by the second magnetoresistance effect element 101c in the high impedance state. 2 is easily output to the port 109b. Similarly, the high-frequency component of the high-frequency signal input from the first port 109a (the high-frequency signal passed through the first magneto-resistance effect element 101a) matches the spin torque resonance frequency of the second magneto-resistance effect element 101d. Or the frequency component near the spin torque resonance frequency flows to the ground 108 through the low impedance second magnetoresistance effect element 101d connected in parallel to the second port 109b, and The frequency component that is difficult to be output to the port 109b and is not close to the spin torque resonance frequency of the second magnetoresistance effect element 101d among the high frequency components of the high frequency signal is grounded by the second magnetoresistance effect element 101c in the high impedance state. 108, and it is easy to output to the second port 109b.

  FIG. 7 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 300 and the amount of attenuation. The vertical axis in FIG. 7 represents the attenuation, and the horizontal axis represents the frequency. The plot line 320 in FIG. 7 shows the case where the magnetic field applied to the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d is constant and the applied DC current is constant. It is a graph. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c, and fd is the spin torque resonance frequency of the second magnetoresistance effect element 101d. Frequency. In FIG. 7, the spin torque resonance frequency of the first magnetoresistance effect element 101a is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101d and the spin torque resonance frequency of the second magnetoresistance effect element 101c. An example is shown.

  As shown by the plot line 320 in FIG. 7, the band near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the band near the spin torque resonance frequency of the second magnetoresistance effect element 101d are cutoff bands. Becomes Further, the first magnetoresistance effect element 101a allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the lower frequency side (lower than the above cutoff band). (Frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a through which the high-frequency signal passes, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101c and near the spin torque resonance frequency of the second magnetoresistance effect element 101d can be made steep. That is, the magnetoresistive effect device 300 in this case functions as a band rejection filter having a steep shoulder characteristic on the low frequency side of the pass band as shown by the plot line 320 in FIG. In this case, the change in the amount of attenuation of the high-frequency signal with respect to the frequency is sharp near the spin torque resonance frequency of the first magnetoresistance effect element 101a. It is preferable to match the lower limit frequency of the cutoff band used.

  Similarly, when the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d. In other words, the magnetoresistive device 300 functions as a band rejection filter having a steep shoulder characteristic on the high frequency side of the rejection band. In this case, it is preferable that the spin torque resonance frequency of the first magnetoresistive element 101a is made to coincide with the upper limit frequency of the cutoff band used.

  Further, the direct current applied to the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d, or the magnetic field application mechanism 111 is connected to the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101a and 101d. The cutoff band can be shifted by changing the magnetic field applied to the magnetoresistive elements 101c and 101d. That is, the magnetoresistive effect device 300 can function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the stop band.

  Further, in the magnetoresistance effect device 300, the number of the second magnetoresistance effect elements may be one (one of the second magnetoresistance effect elements 101c and 101d).

  As described above, the magnetoresistance effect device 300 includes the first magnetoresistance effect element 101a, the two second magnetoresistance effect elements 101c and 101d, the first port 109a to which a high-frequency signal is input, and the high-frequency signal. , A signal line 107, and a DC current input terminal 110 (DC application terminal). The first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order via the signal line 107, and the two second magnetoresistive elements 101c and 101d are connected to the signal line 107 in parallel with the second port 109b, and the first magnetoresistance The effect element 101a and the two second magnetoresistive elements 101c and 101d are respectively provided with the magnetization fixed layer 102, the magnetization free layer 104, and the The first magnetoresistive element 101a and the second magnetoresistive elements 101c and 101d each have one end on the DC current input terminal 110 (DC application terminal) side. The first and second magnetoresistance effect elements 101a and 101c are connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 such that the other end is on the reference potential terminal 114 side. 101d indicates the relationship between the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102. The first magnetoresistance effect element 101a and the second magnetoresistance effect The elements 101c and 101d are formed so as to be the same. The first magnetoresistance effect element 101a is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the first magnetoresistance effect element 101a. The second magnetoresistive element 101c is formed so that a direct current input from a direct current input terminal 110 (direct current application terminal) is free to magnetize in the second magnetoresistive element 101c. The second magnetoresistance effect element 101d is formed so as to flow in the direction from the layer 104 to the magnetization fixed layer 102. The DC current input from the DC current input terminal 110 (DC application terminal) is It is formed so as to flow from the magnetization free layer 104 to the magnetization fixed layer 102 in the element 101d, and the spin torque resonance frequency of the first magnetoresistance effect element 101a and the second Spin torque resonance frequency of the magnetoresistive element 101c are different from each other, the spin torque resonance frequency of the spin torque resonance frequency and the second magnetoresistive element 101d of the first magnetoresistive element 101a are different from each other.

  Therefore, when a high-frequency signal is input from the first port 109a to the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d via the signal line 107, the first magnetoresistive element Spin torque resonance can be induced in the effect element 101a and the two second magnetoresistive elements 101c and 101d. At the same time as the spin torque resonance, a DC current flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the first magnetoresistance effect element 101a, so that the spin torque resonance frequency of the first magnetoresistance effect element 101a is increased. The element impedance of the first magnetoresistance effect element 101a for the same frequency as that of the first element decreases. Similarly, a DC current flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the second magnetoresistance effect elements 101c and 101d simultaneously with the spin torque resonance, so that the second magnetoresistance effect element 101c The element impedance of the second magnetoresistance effect element 101c with respect to the same frequency as the spin torque resonance frequency decreases, and the element of the second magnetoresistance effect element 101d with respect to the same frequency as the spin torque resonance frequency of the second magnetoresistance effect element 101d. The impedance decreases.

  Since the first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order, a high-frequency signal can be transmitted to a non-resonant state where the first magnetoresistive element 101a is in a high impedance state. At the frequency, the second port 109b can be cut off, and at the resonance frequency where the first magnetoresistive element 101a is in a low impedance state, it can be passed to the second port 109b. Further, by connecting the two second magneto-resistance effect elements 101c and 101d to the signal line 107 in parallel with the second port 109b, high-frequency signals can be transmitted to the second magneto-resistance effect elements 101c and 101d. Can be cut off to the second port 109b at a resonance frequency in a low impedance state, and can be passed to the second port 109b side at a non-resonance frequency at a high impedance state of the second magnetoresistive elements 101c and 101d. I can do it. As described above, the magnetoresistive device 300 transmits the high-frequency signal input from the first port 109a to the second port 109b at a frequency near the spin torque resonance frequency of the first magnetoresistive element 101a. The second port 109b can be cut off at a frequency near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d. Can be done. That is, the magnetoresistive device 300 has the maximum value of the amount of passing of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistive element 101a, the spin torque resonance frequency of the second magnetoresistive element 101c and the second value. At the spin torque resonance frequency of the magneto-resistance effect element 101d, and functions as a high-frequency filter.

  In the magnetoresistive device 300, a band near the spin torque resonance frequency of the second magnetoresistance effect element 101c or a band near the spin torque resonance frequency of the second magnetoresistance effect element 101d is a cutoff band. Since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the first magnetoresistance effect element 101a is Since the spin torque resonance frequency of the magnetoresistive element 101c is higher or lower than the spin torque resonance frequency), the high frequency signal passes through the second port on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101c. Can be done. Further, since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101d are different from each other (the spin torque resonance frequency of the first magnetoresistance effect element 101a is 2 is higher or lower than the spin torque resonance frequency of the second magnetoresistive element 101d), and the high frequency signal is transmitted to the second port on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101d. Can be passed through. In the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a through which the high-frequency signal passes, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the high frequency side or the low frequency side of the stop band formed near the spin torque resonance frequency of the effect element 101c or near the spin torque resonance frequency of the second magnetoresistive effect element 101d can be made steep. become. That is, the magnetoresistive device 300 can function as a band-stop filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the stop band.

  Further, the magnetoresistance effect device 300 has two second magnetoresistance effect elements 101c and 101d having different spin torque resonance frequencies from each other, and the spin torque resonance frequency of the first magnetoresistance effect element 101a is two It has a wide cut-off band because it is higher than the spin torque resonance frequency of each of the two magnetoresistive elements 101c and 101d or lower than the spin torque resonance frequency of each of the two second magnetoresistive elements 101c and 101d. It becomes possible to function as a band rejection filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the band.

  Further, in the above description, an example has been described in which the two second magnetoresistance elements 101c and 101d are connected to each other in series. However, three or more second magnetoresistance elements may be provided. Further, a plurality of second magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, each of the second magnetoresistive elements is connected to the signal line 107 in parallel with the second port 109b, so that the device is similar to the magnetoresistive device 300. Can have a frequency characteristic as a high-frequency filter.

  In the above description, the two second magnetoresistance elements 101c and 101d are connected in parallel with the second port 109b between the first magnetoresistance element 101a and the second port 109b. Although the DC current input terminal 110 is connected to the signal line 107 and the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a, the two second Are connected to the signal line 107 between the first magneto-resistance effect element 101a and the first port 109a in parallel with the second port 109b, and the DC current input terminal 110 may be connected to the signal line 107 between the first magnetoresistive element 101a and the second port 109b. More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to a signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the second magnetoresistance element The magnetization fixed layer 102 side of the effect element 101d may be connected to the reference potential terminal 114 and connected to the ground 108 via the reference potential terminal 114.

  In the same manner as in the second embodiment, the inductor 113 is connected to the first magnetoresistance effect element 101a in parallel with the second port 109b in the magnetoresistance effect device 300 of the third embodiment. Signal line 107 between the first port 109a and the first port 109a (the signal line 107 between the first magnetoresistive element 101a and the first port 109a, or the first magnetoresistive element 101a and the second port DC signal input terminal 110 is connected to signal line 107 (first magnetoresistive effect) between first magnetoresistive element 101a and second port 109b. Connected to the signal line 107 between the element 101a and the first port 109a or the other of the signal line 107 between the first magnetoresistive element 101a and the second port 109b). Where the two second magnetoresistive elements 101c and 101d are connected in parallel to the second port 109b and the connection point of the inductor 113 to the signal line 107 across the first magnetoresistive element 101a. The connection may be made to the signal line 107 on the opposite side.

  In the magnetoresistive device 300 of the third embodiment, in order to further widen the cutoff band and sharpen the shoulder characteristics, the Q value of the first magnetoresistance effect element 101a that sharpens the shoulder characteristics is cut off. It is preferable to make the Q value larger than at least one of the second magnetoresistance effect element 101c and the second magnetoresistance effect element 101d forming the band. Since the Q value of the magnetoresistive element at the time of spin torque resonance is proportional to the current density of the DC current applied to the magnetoresistive element, for example, the first magnetoresistive element 101a and the second magnetoresistive element When the first magneto-resistance effect element 101c and the second magneto-resistance effect element 101d are connected in series, the area of the first magneto-resistance effect element 101a in plan view is changed to the second magneto-resistance effect element 101c (the second magnetic resistance effect element 101c). By making the area of the resistive effect element 101d) smaller than the area of the planar view shape, the Q value of the first magnetoresistive effect element 101a is changed to the second magnetoresistive effect element 101c (second magnetoresistive effect element 101d). It can be larger than the Q value.

(Fourth embodiment)
FIG. 8 is a schematic sectional view of a magnetoresistive device 400 according to the fourth embodiment of the present invention. In the magnetoresistive device 400, points that are different from the magnetoresistive device 100 of the first embodiment will be mainly described, and common items will not be described. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements will be omitted. The magnetoresistive device 400 further includes a third magnetoresistive element 101e with respect to the magnetoresistive device 100 of the first embodiment. The third magnetoresistive element 101e includes a magnetization fixed layer 102 (third magnetization fixed layer), a magnetization free layer 104 (third magnetization free layer), and a spacer layer 103 (third magnetization free layer) disposed therebetween. Spacer layer). The third magnetoresistive element 101e is connected to the signal line 107 in parallel with the second port 109b. Similarly to the second magnetoresistance effect element 101c, the third magnetoresistance effect element 101e is connected in parallel with the second port 109b to the two first magnetoresistance effect elements 101a and 101b and the second port 109b. The signal line 107 is connected to the signal line 107b. More specifically, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in series with each other, and one end (on the magnetization free layer 104 side) of the third magnetoresistance effect element 101e is The other end of the third magnetoresistance effect element 101e (the magnetization fixed layer) is connected to the signal line 107 (second magnetoresistance effect element 101c) between the first magnetoresistance effect element 101b and the second port 109b. 102 side) is connected to the reference potential terminal 114 and can be connected to the ground 108 via the reference potential terminal 114.

  The third magnetoresistance effect element 101e has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side and the other end side (in this example, the magnetization fixed layer 102 side) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistance effect device 400, the first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e are oriented from one end to the other. And the relationship between the directions from the respective magnetization free layers 104 to the magnetization pinned layers 102, the two first magnetoresistance elements 101a and 101b, the second magnetoresistance element 101c, and the third magnetoresistance element. It is formed (arranged) so as to be the same as 101e. In this example, in each of the first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e, the direction from one end to the other end and the magnetization The direction from the free layer 104 to the magnetization fixed layer 102 has the same direction.

  The third magnetoresistance effect element 101e is formed such that a DC current input from the DC current input terminal 110 flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the third magnetoresistance effect element 101e. (Placed). That is, in the magnetoresistive device 400, it flows through each of the first magnetoresistive device 101a, the first magnetoresistive device 101b, the second magnetoresistive device 101c, and the third magnetoresistive device 101e. The relationship between the direction of the DC current and the arrangement order of the magnetization fixed layer 102, the spacer layer 103, and the magnetization free layer 104 depends on the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101b. The same applies to the magneto-resistance effect element 101c and the third magneto-resistance effect element 101e. Further, the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of each of the two first magnetoresistance effect elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is increased. The torque resonance frequency is lower than the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b.

  After the high-frequency signal input from the first port 109a passes through the two first magnetoresistive elements 101a and 101b, a part of the high-frequency signal is transmitted to the second magnetoresistive element 101c and the third magnetic element. The remaining high-frequency signal is sent to the resistance effect element 101e and output to the second port 109b.

  The third magnetoresistance effect element 101e has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 (second magnetoresistance effect element 101c) via the upper electrode 105, and the other end (magnetization fixed). The layer 102 is electrically connected to the ground 108 via the lower electrode 106 and the reference potential terminal 114.

  The DC current input terminal 110 is opposite to the connection point of the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e to the signal line 107 across the two first magnetoresistance effect elements 101a and 101b. It is connected to the signal line 107 on the side. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a. When the DC current source 112 is connected to the DC current input terminal 110, the DC current is supplied to the two first magnetoresistance elements 101a and 101b, the second magnetoresistance element 101c, and the third magnetoresistance element 101e. Can be applied.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and is connected to the two first magnetoresistance elements 101a and 101b, the signal line 107, the second magnetoresistance element 101c, and the third magnetoresistance effect. A closed circuit including the element 101e, the ground 108, and the DC current input terminal 110 is formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit.

  The magnetic field applying mechanism 111 is disposed near the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e, and includes two first magnetoresistive elements 101a and 101b. By applying a magnetic field to the effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e, the spin torque resonance frequency of each magnetoresistance effect element can be set.

  Other configurations of the magnetoresistive device 400 are the same as those of the magnetoresistive device 100 of the first embodiment.

  In the magneto-resistance effect device 400, the third magneto-resistance effect element 101e is configured such that the DC current input from the DC current input terminal 110 flows through the third magneto-resistance effect element 101e from the magnetization free layer 104 to the magnetization fixed layer 102. In the same manner as the second magnetoresistance effect element 101c, it can be treated as a resistance element in which the impedance of the high-frequency signal decreases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Due to the spin torque resonance phenomenon, the third magneto-resistance effect element 101e is included in the high-frequency components of the high-frequency signal input from the first port 109a (the high-frequency signal passing through the two first magneto-resistance elements 101a and 101b). The frequency component that matches or is close to the spin torque resonance frequency flows to the ground 108 by the low impedance third magnetoresistive element 101e connected in parallel to the second port 109b. This makes it difficult to output to the second port 109b. On the other hand, a frequency component that is not near the spin torque resonance frequency of the third magnetoresistive effect element 101e among the high frequency components of the high frequency signal is cut off from the ground 108 by the third magnetoresistive effect element 101e in a high impedance state. 2 is easily output to the port 109b.

  FIG. 9 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 400 and the amount of attenuation. The vertical axis in FIG. 9 represents the attenuation, and the horizontal axis represents the frequency. The plot line 420 in FIG. 9 indicates that the magnetic field applied to the two first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e is constant and the applied magnetic field is constant. 7 is a graph when the applied DC current is constant. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c. And fe is the spin torque resonance frequency of the third magnetoresistance effect element 101e.

  As shown by the plot line 420 in FIG. 9, the band near the spin torque resonance frequency of the first magnetoresistance effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistance effect element 101b are the passbands. Becomes Further, the second magnetoresistance effect element 101c allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the higher frequency side (higher than the above passband). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the second magnetoresistive element 101c where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side of the pass band formed near the spin torque resonance frequency of the resistance element 101a and near the spin torque resonance frequency of the first magnetoresistance element 101b can be made steep. Further, the third magnetoresistance effect element 101e allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the lower frequency side (lower than the above passband). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the third magnetoresistive element 101e from which the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the passband formed near the spin torque resonance frequency of the resistance effect element 101a and near the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive device 400 functions as a bandpass filter having a steep shoulder characteristic on both the low frequency side and the high frequency side of the passband, as shown by the plot line 420 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c and the vicinity of the spin torque resonance frequency of the third magnetoresistance effect element 101e, the change of the amount of attenuation of the high-frequency signal with respect to the frequency is sharp. Therefore, the spin torque resonance frequency of the second magneto-resistance effect element 101c is made to match the upper limit frequency of the pass band to be used, and the spin torque resonance frequency of the third magneto-resistance effect element 101e is set to the lower limit frequency of the pass band to be used. Preferably.

  Further, in the magneto-resistance effect device 400, the number of the first magneto-resistance effect element may be one (one of the first magneto-resistance effect elements 101a and 101b).

  As described above, the magnetoresistive device 400 further includes the third magnetoresistive device 101 e with respect to the magnetoresistive device 100, and the third magnetoresistive device 101 e is configured with respect to the second port 109 b. The two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e, which are connected in parallel to the signal line 107, include a magnetization fixed layer 102 and a magnetization free layer. The third magnetoresistive element 101e has a DC current input terminal 110 (DC application terminal) at one end and a reference potential terminal 114 at the other end. Side, is connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 so that the first magnetoresistive element 10 a, 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e each have a direction from one end to the other end and a direction from the magnetization free layer 104 to the magnetization fixed layer 102. Are formed to be the same in the first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e. The third magnetoresistance effect element 101e is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the third magnetoresistance effect element 101e. The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the third magnetoresistance effect element 101e has The spin torque resonance frequency is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than that of the first magnetoresistance effect element 101b. The spin torque resonance frequency of the third magnetoresistance effect element 101e is higher than the spin torque resonance frequency, It is lower than the spin torque resonance frequency of 101b.

  Therefore, when a high-frequency signal is input to the third magnetoresistance effect element 101e from the first port 109a via the signal line 107, spin torque resonance can be induced in the third magnetoresistance effect element 101e. . At the same time as the spin torque resonance, a DC current flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the third magnetoresistance effect element 101e, so that the spin torque resonance frequency of the third magnetoresistance effect element 101e is increased. The element impedance of the third magnetoresistive element 101e with respect to the same frequency as that of the first element decreases.

  By connecting the third magnetoresistive element 101e to the signal line 107 in parallel with the second port 109b, the third magnetoresistive element 101e transmits a high-frequency signal to the resonance frequency at which the third magnetoresistive element 101e is in a low impedance state. In this case, the second port 109b can be cut off and the third magnetoresistance effect element 101e can be passed to the second port 109b at a non-resonant frequency in a high impedance state.

  The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is higher than the first magnetic field. Since the spin torque resonance frequency of the resistance effect element 101a is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a, it is possible to cut off the high frequency signal from the second port on the high frequency side and the low frequency side of the spin torque resonance frequency. it can. Further, the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is the first. Is lower than the spin torque resonance frequency of the magnetoresistive element 101b, the high frequency signal is cut off to the second port on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistance effect element 101b. be able to. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c where the high frequency signal is cut off and in the vicinity of the spin torque resonance frequency of the third magnetoresistance effect element 101e, the attenuation with respect to the attenuation of the high frequency signal in the pass band. Since the ratio of the amounts can be further increased, the pass band formed near the spin torque resonance frequency of the first magnetoresistance effect element 101a or near the spin torque resonance frequency of the first magnetoresistance effect element 101b is reduced. It becomes possible to sharpen the shoulder characteristics on both the high frequency side and the low frequency side. That is, the magnetoresistive effect device 400 can function as a bandpass filter having steep shoulder characteristics on both the high frequency side and the low frequency side of the passband.

  Further, since the magnetoresistive device 400 has two first magnetoresistive devices 101a and 101b having different spin torque resonance frequencies, the device 400 has a wide pass band and the spin torque resonance of the second magnetoresistive device 101c. The frequency is higher than the spin torque resonance frequency of each of the two first magnetoresistance elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistance element 101e is two first magnetoresistance elements. Since it is lower than the spin torque resonance frequency of each of 101a and 101b, it becomes possible to function as a band-pass filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the pass band.

  Further, in the above description, an example has been described in which the two first magnetoresistive elements 101a and 101b are connected in series with each other. However, three or more first magnetoresistive elements may be provided. Further, a plurality of first magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, the first port 109a, the respective first magnetoresistive elements, and the second port 109b are connected in series in this order via the signal line 107. It can have the same frequency characteristics as a high-frequency filter similar to the magnetoresistive device 400.

  Further, in the above description, the example in which the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in series has been described. However, the second magnetoresistance effect element 101c and the third The magnetoresistance effect elements 101e may be connected in parallel with each other. Even in this case, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected to the signal line 107 in parallel with the second port 109b. The same as the magnetoresistive device 400, it can have a frequency characteristic as a high frequency filter.

  Further, in the above description, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in parallel to the second port 109b, and the first magnetoresistance effect element 101b and the second In the example described above, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. , The second magneto-resistance effect element 101c and the third magneto-resistance effect element 101e are connected in parallel with the second port 109b to generate a signal between the first magneto-resistance effect element 101a and the first port 109a. The DC current input terminal 110 connected to the line 107 may be connected to the signal line 107 between the first magnetoresistive element 101b and the second port 109b.More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the third magnetoresistance element The magnetization fixed layer 102 side of the effect element 101e may be connected to the reference potential terminal 114 and connected to the ground 108 via the reference potential terminal 114.

  Further, in the above description, as the magnetoresistive device 400, an example is described in which the third magnetoresistive effect element 101e is added to the magnetoresistive effect device 100 of the first embodiment. The third magneto-resistance effect element 101e may be similarly added to the magneto-resistance effect device 200 of the embodiment.

  In the magnetoresistive device 400 of the fourth embodiment, in order to further increase the passband and sharpen the shoulder characteristics, the second magnetoresistive effect element 101c for making the shoulder characteristics sharp and the third magnetoresistance It is preferable that each Q value of the effect element 101e is larger than at least one of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b that form the pass band. Since the Q value of the magnetoresistive element at the time of spin torque resonance is proportional to the current density of the direct current applied to the magnetoresistive element, for example, the first magnetoresistive element 101a and the first magnetoresistive element When the first magnetoresistance effect element 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e are connected in series with each other, the area of the second magnetoresistance effect element 101c in a plan view shape and the third magnetoresistance By making the area of the effect element 101e in plan view smaller than the area of the first magnetoresistive element 101a (first magnetoresistive element 101b) in plan view, the second magnetoresistive element 101c is formed. And the Q value of the third magnetoresistance effect element 101e can be made larger than the Q value of the first magnetoresistance effect element 101a (the first magnetoresistance effect element 101b).

(Fifth embodiment)
FIG. 10 is a schematic sectional view of a magnetoresistive device 500 according to the fifth embodiment of the present invention. In the magnetoresistive device 500, points that are different from the magnetoresistive device 300 of the third embodiment will be mainly described, and common items will not be further described. Elements common to the magnetoresistive device 100 of the first embodiment and the magnetoresistive device 300 of the third embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistive device 500 further includes a fourth magnetoresistive element 101f in addition to the magnetoresistive device 300 of the third embodiment. The fourth magnetoresistance effect element 101f includes a magnetization fixed layer 102 (fourth magnetization fixed layer), a magnetization free layer 104 (fourth magnetization free layer), and a spacer layer 103 (fourth magnetization free layer) disposed therebetween. Spacer layer). The first port 109a, the fourth magnetoresistive element 101f, and the second port 109b are connected in series in this order via the signal line 107. More specifically, the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f are connected to each other in series.

  The fourth magnetoresistance effect element 101f has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side, and the other end side (in this example, the magnetization fixed layer 102 side) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistive device 500, the first magnetoresistive device 101a, the second magnetoresistive devices 101c and 101d, and the fourth magnetoresistive device 101f are oriented from one end to the other end. The relationship between the direction from the magnetization free layer 104 to the magnetization fixed layer 102 is that the first magnetoresistive element 101a, the two second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element It is formed (arranged) so as to be the same as 101f. In this example, in the first magnetoresistive element 101a, the second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element 101f, the direction from one end to the other end and the magnetization The direction from the free layer 104 to the magnetization fixed layer 102 has the same direction.

  The fourth magnetoresistance effect element 101f is formed such that a DC current input from the DC current input terminal 110 flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the fourth magnetoresistance effect element 101f. (Placed). That is, in the magnetoresistance effect device 500, the current flows through each of the first magnetoresistance effect element 101a, the second magnetoresistance effect element 101c, the second magnetoresistance effect element 101d, and the fourth magnetoresistance effect element 101f. The relationship between the direction of the DC current and the arrangement order of the respective magnetization fixed layers 102, spacer layers 103, and magnetization free layers 104 depends on the first magnetoresistance effect element 101a, the second magnetoresistance effect element 101c, and the second magnetoresistance effect element 101c. The same applies to the magnetoresistance effect element 101d and the fourth magnetoresistance effect element 101f. Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d, The spin torque resonance frequency of the magnetoresistance effect element 101f is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d.

  After the high-frequency signal input from the first port 109a passes through the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f, part of the high-frequency signal is converted into two second magnetoresistance effects. The remaining high-frequency signals passed through the elements 101c and 101d are output to the second port 109b.

  The fourth magnetoresistance effect element 101f has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 via the upper electrode 105, and the other end (on the magnetization fixed layer 102 side) via the lower electrode 106. And is electrically connected to the signal line 107.

  The DC current input terminal 110 is opposite to the connection point of the two second magnetoresistance effect elements 101c and 101d to the signal line 107 with the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f interposed therebetween. It is connected to the signal line 107 on the side. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a. When the DC current source 112 is connected to the DC current input terminal 110, the DC current is supplied to the first magnetoresistance effect element 101a, the fourth magnetoresistance effect element 101f, and the two second magnetoresistance effect elements 101c and 101d. Can be applied.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and has a first magnetoresistance effect element 101a, a fourth magnetoresistance effect element 101f, a signal line 107, and two second magnetoresistance effect elements 101c. , 101d, the ground 108 and the DC current input terminal 110 are formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit.

  The magnetic field applying mechanism 111 is disposed near the first magnetoresistive element 101a, the fourth magnetoresistive element 101f, and the two second magnetoresistive elements 101c and 101d. By applying a magnetic field to 101a, the fourth magnetoresistive element 101f, and the two second magnetoresistive elements 101c and 101d, the spin torque resonance frequency of each magnetoresistive element can be set.

  Other configurations of the magnetoresistive device 500 are the same as those of the magnetoresistive device 300 of the third embodiment.

  In the magneto-resistance effect device 500, the fourth magneto-resistance effect element 101f is configured such that a DC current input from the DC current input terminal 110 is transmitted from the magnetization free layer 104 to the magnetization fixed layer 102 in the fourth magneto-resistance effect element 101f. In the same manner as the first magnetoresistance effect element 101a, it can be handled as a resistance element in which the impedance of a high-frequency signal decreases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Due to the spin torque resonance phenomenon, a frequency component that matches the spin torque resonance frequency of the fourth magnetoresistive element 101f or is close to the spin torque resonance frequency in the high frequency components of the high frequency signal input from the first port 109a. Pass through the fourth magnetoresistive element 101f in a low impedance state, and are easily output to the second port 109b. On the other hand, in the high frequency component of the high frequency signal, a frequency component that is not near the spin torque resonance frequency of the fourth magnetoresistive element 101f is connected to the second port 109b by the fourth magnetoresistive element 101f in a high impedance state. It becomes difficult to output.

  FIG. 11 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 500 and the amount of attenuation. In FIG. 11, the vertical axis represents attenuation, and the horizontal axis represents frequency. A plot line 520 in FIG. 11 indicates that the magnetic field applied to the two second magnetoresistance effect elements 101c and 101d, the first magnetoresistance effect element 101a, and the fourth magnetoresistance effect element 101f is constant and the applied magnetic field is constant. 7 is a graph when the applied DC current is constant. fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c, fd is the spin torque resonance frequency of the second magnetoresistance effect element 101d, and fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a. And ff is the spin torque resonance frequency of the fourth magnetoresistance effect element 101f.

  As shown by the plot line 520 in FIG. 11, the band near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the band near the spin torque resonance frequency of the second magnetoresistance effect element 101d are cutoff bands. Becomes Further, the first magnetoresistance effect element 101a allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the higher frequency side (higher than the above cutoff band). (Frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a through which the high-frequency signal passes, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the cutoff band can be further reduced. This makes it possible to sharpen the shoulder characteristics on the high frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101c and near the spin torque resonance frequency of the second magnetoresistance effect element 101d. In addition, the fourth magnetoresistance effect element 101f allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the lower frequency side (lower than the above cutoff band). On the frequency side), a high-frequency signal can be passed to the second port 109b. In the vicinity of the spin torque resonance frequency of the fourth magnetoresistive element 101f through which the high-frequency signal passes, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101c and near the spin torque resonance frequency of the second magnetoresistance effect element 101d can be made steep. That is, the magnetoresistive device 500 functions as a band rejection filter having a steep shoulder characteristic on both the low frequency side and the high frequency side of the stop band, as shown by the plot line 520 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a and in the vicinity of the spin torque resonance frequency of the fourth magnetoresistance effect element 101f, the change of the attenuation amount of the high frequency signal with respect to the frequency is sharp. Therefore, the spin torque resonance frequency of the first magnetoresistance effect element 101a is made to match the upper limit frequency of the cutoff band to be used, and the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is set to the lower limit frequency of the cutoff band to be used. Preferably.

  Further, in the magnetoresistance effect device 500, the number of the second magnetoresistance effect element may be one (one of the second magnetoresistance effect elements 101c and 101d).

  As described above, the magnetoresistance effect device 500 further includes the fourth magnetoresistance effect element 101f with respect to the magnetoresistance effect device 300, and the first port 109a, the fourth magnetoresistance effect element 101f, and the second The port 109b is connected in series via the signal line 107 in this order. The fourth magnetoresistive element 101f includes a layer 102, a magnetization free layer 104, and a spacer layer 103 disposed therebetween. One end of the fourth magnetoresistance effect element 101f is located on a DC current input terminal 110 (DC application terminal) side. The DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 are connected so that the end side is on the reference potential terminal 114 side. , The first magnetoresistive element 101a, the second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element 101f, each of which has a direction from one end to the other end and a magnetization free layer 104. From the first to the magnetization fixed layer 102 so that the first magnetoresistance effect element 101a, the two second magnetoresistance effect elements 101c and 101d, and the fourth magnetoresistance effect element 101f have the same relationship. Is formed. The fourth magneto-resistance effect element 101f is configured such that a DC current input from a DC current input terminal 110 (DC application terminal) flows through the fourth magneto-resistance effect element 101f from the magnetization free layer 104 to the magnetization fixed layer 102. , The spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the The spin torque resonance frequency is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the spin torque resonance frequency of the first magnetoresistance effect element 101a is lower than that of the second magnetoresistance effect element 101d. The spin torque resonance frequency of the fourth magnetoresistance effect element 101f is higher than the spin torque resonance frequency, It is lower than the spin torque resonance frequency of the 101d.

  Therefore, when a high-frequency signal is input to the fourth magnetoresistive element 101f from the first port 109a via the signal line 107, spin torque resonance can be induced in the fourth magnetoresistive element 101f. . At the same time as the spin torque resonance, a DC current flows from the magnetization free layer 104 to the magnetization fixed layer 102 in the fourth magnetoresistance effect element 101f, so that the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is increased. The element impedance of the fourth magnetoresistive element 101f with respect to the same frequency as that of the fourth magnetoresistance effect element 101f decreases.

  Since the first port 109a, the fourth magnetoresistive element 101f, and the second port 109b are connected in series in this order, the high-frequency signal is transmitted to the resonance frequency when the fourth magnetoresistive element 101f is in the low impedance state. In this case, the signal can be passed to the second port 109b side and cut off from the second port 109b at the non-resonant frequency where the fourth magnetoresistance effect element 101f is in a high impedance state.

  The spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is the second magnetoresistance effect. Since the spin torque resonance frequency of the effect element 101c is lower than that of the spin torque resonance frequency of the second magnetoresistive element 101c, a high-frequency signal can be passed to the second port 109b on the high frequency side and the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101c. it can. Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101d, and the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is the second. Since the spin torque resonance frequency of the magnetoresistance effect element 101d is lower than that of the spin torque resonance frequency, the high frequency signal is passed to the second port 109b on the high frequency side and the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101d. be able to. In the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a through which the high frequency signal passes and in the vicinity of the spin torque resonance frequency of the fourth magnetoresistance effect element 101f, the attenuation amount relative to the attenuation amount of the high frequency signal in the cutoff band. Of the second magnetoresistive effect element 101c or near the spin torque resonance frequency of the second magnetoresistive effect element 101d. It becomes possible to sharpen the shoulder characteristics on the frequency side and the low frequency side. That is, the magnetoresistive effect device 500 can function as a band rejection filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the rejection band.

  Furthermore, since the magnetoresistive device 500 has two second magnetoresistive devices 101c and 101d having different spin torque resonance frequencies from each other, it has a wide cut-off band, and has a spin torque resonance frequency of the first magnetoresistive device 101a. The frequency is higher than the spin torque resonance frequency of each of the two second magnetoresistance elements 101c and 101d, and the spin torque resonance frequency of the fourth magnetoresistance element 101f is two second magnetoresistance elements. Since it is lower than the spin torque resonance frequency of each of 101c and 101d, it becomes possible to function as a band rejection filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the rejection band.

  Further, in the above description, an example has been described in which the two second magnetoresistance elements 101c and 101d are connected to each other in series. However, three or more second magnetoresistance elements may be provided. Further, a plurality of second magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, each of the second magnetoresistive elements is connected to the signal line 107 in parallel with the second port 109b, so that the device is similar to the magnetoresistive device 500. Can have a frequency characteristic as a high-frequency filter.

  Further, in the above description, an example is described in which the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f are connected to each other in series. However, the first magnetoresistance effect element 101a and the fourth The magnetoresistive elements 101f may be connected in parallel with each other. Even in the magnetoresistive device in this case, the first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order via the signal line 107, and the first port 109a Since the fourth magnetoresistive element 101f and the second port 109b are connected in series in this order via the signal line 107, the same frequency characteristics as a high-frequency filter as in the magnetoresistive effect device 500 can be obtained. it can.

  In the above description, the two second magnetoresistance effect elements 101c and 101d are connected in parallel with the second port 109b between the fourth magnetoresistance effect element 101f and the second port 109b. Although the DC current input terminal 110 is connected to the signal line 107 and the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a, the second magnetic field The resistance effect elements 101c and 101d are connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a in parallel with the second port 109b, and the DC current input terminal 110 , May be connected to the signal line 107 between the fourth magnetoresistive element 101f and the second port 109b. More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to a signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the second magnetoresistance element The magnetization fixed layer 102 side of the effect element 101d may be connected to the reference potential terminal 114 and connected to the ground 108 via the reference potential terminal 114.

  In the same manner as in the second embodiment, the inductor 113 is connected to the first magnetoresistive element 101a in parallel with the second port 109b with respect to the magnetoresistive device 500 of the fifth embodiment. Line 107 between the first port 109a and the first port 109a (the signal line 107 between the first and fourth magnetoresistive elements 101a and 101f and the first port 109a, or the first magnetic field). One of the signal lines 107 between the resistance effect element 101a and the fourth magnetoresistance effect element 101f and the second port 109b), and the DC current input terminal 110 is connected to the fourth magnetoresistance effect element 101f. The signal line 107 between the first port 109a and the signal line 107 (the signal between the first and fourth magnetoresistive elements 101a and 101f and the first port 109a). Line 107 or the other of the signal line 107 between the first and fourth magnetoresistive elements 101a and 101f and the second port 109b) and two second magnetoresistive elements. 101c and 101d are connected to the signal line 107 of the inductor 113 in parallel with the second port 109b with at least one of the first and fourth magnetoresistive elements 101a and 101f interposed therebetween. May be connected to the signal line 107 on the opposite side.

  In the magnetoresistive device 500 according to the fifth embodiment, in order to further increase the cutoff band and sharpen the shoulder characteristics, the first magnetoresistive element 101a and the fourth magnetoresistive element having the steep shoulder characteristics are provided. It is preferable that the Q value of each of the effect elements 101f be larger than the Q value of at least one of the second magnetoresistance effect element 101c and the second magnetoresistance effect element 101d that form the cutoff band. Since the Q value of the magnetoresistive element at the time of spin torque resonance is proportional to the current density of the DC current applied to the magnetoresistive element, for example, the first magnetoresistive element 101a and the fourth magnetoresistive element When the first magnetoresistance effect element 101f, the second magnetoresistance effect element 101c, and the second magnetoresistance effect element 101d are connected in series to each other, the area of the first magnetoresistance effect element 101a in plan view and the fourth magnetoresistance By making the area of the effect element 101f in plan view smaller than the area of the second magnetoresistance effect element 101c (second magnetoresistance effect element 101d) in plan view, the first magnetoresistance effect element 101a is formed. And the Q value of the fourth magnetoresistance effect element 101f can be made larger than the Q value of the second magnetoresistance effect element 101c (the second magnetoresistance effect element 101d).

(Sixth embodiment)
FIG. 12 is a schematic sectional view of a magnetoresistive device 600 according to the sixth embodiment of the present invention. In the magnetoresistive effect device 600, points different from the magnetoresistive effect device 100 of the first embodiment will be mainly described, and description of common items will be omitted as appropriate. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements will be omitted. The magnetoresistive device 600 is different from the magnetoresistive device 100 of the first embodiment in the direction of the DC current flowing through the two first magnetoresistive devices 101a and 101b and the second magnetoresistive device 101c. The direction of the direct current flowing through the inside is different. In the magneto-resistance effect device 600, the first magneto-resistance effect element 101a is configured such that a DC current input from the DC current input terminal 110 flows through the first magneto-resistance effect element 101a from the magnetization fixed layer 102 to the magnetization free layer 104. (Flow direction). The first magnetoresistance effect element 101b is formed such that a direct current input from the direct current input terminal 110 flows through the first magnetoresistance effect element 101b from the magnetization fixed layer 102 to the magnetization free layer 104. (Placed). The second magnetoresistance effect element 101c is formed so that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101c from the magnetization fixed layer 102 to the magnetization free layer 104. (Placed). That is, in the magnetoresistance effect device 600, the direction of the DC current flowing in each of the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c, and the respective magnetization directions The relationship between the arrangement of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is the same for the first magnetoresistive element 101a, the first magnetoresistive element 101b, and the second magnetoresistive element 101c. ing. Other configurations of the magnetoresistive device 600 are the same as those of the magnetoresistive device 100 of the first embodiment.

  A high-frequency signal having the same frequency as the spin torque resonance frequency is applied to each magnetoresistive element while applying a direct current flowing in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in each magnetoresistive element. Is input, the resistance value of each magnetoresistive element changes periodically at the spin torque resonance frequency in a state where the phase differs from that of the input high-frequency signal by 180 °, and the impedance to the high-frequency signal increases. That is, in the magnetoresistive device 600, the two first magnetoresistive devices 101a and 101b and the second magnetoresistive device 101c increase the impedance of the high-frequency signal at the spin torque resonance frequency due to the spin torque resonance phenomenon. It can be handled as a resistance element.

  Due to the spin torque resonance phenomenon, a frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency component of the high frequency signal input from the first port 109a Is hardly output to the second port 109b by the first magnetoresistive element 101a in a high impedance state. On the other hand, a frequency component that is not near the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency signal of the high frequency signal passes through the first magnetoresistance effect element 101a in the low impedance state, and the second port 109b. Similarly, in the high-frequency component of the high-frequency signal input from the first port 109a, the frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistive element 101b is high. The first magnetoresistance effect element 101b in the impedance state makes it difficult to output to the second port 109b, and a frequency component of the high frequency component of the high frequency signal that is not near the spin torque resonance frequency of the first magnetoresistance effect element 101b. Pass through the first magnetoresistive element 101b in a low impedance state and are easily output to the second port 109b.

  Further, due to the spin torque resonance phenomenon, the second magnetoresistance effect in the high frequency components of the high frequency signal input from the first port 109a (the high frequency signal passing through the two first magnetoresistance elements 101a and 101b). A frequency component that matches or is close to the spin torque resonance frequency of the element 101c is grounded by the high impedance second magnetoresistive element 101c connected in parallel to the second port 109b. From the second port 109b. On the other hand, frequency components that are not near the spin torque resonance frequency of the second magnetoresistance effect element 101c among the high frequency components of the high frequency signal flow to the ground 108 through the high impedance second magnetoresistance effect element 101c. , It is difficult to output to the second port 109b.

  FIG. 13 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 600 and the amount of attenuation. In FIG. 13, the vertical axis represents the attenuation, and the horizontal axis represents the frequency. A plot line 620 in FIG. 13 is a graph when the magnetic field applied to the first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is constant and the applied DC current is constant. is there. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c. Frequency. In FIG. 13, the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. An example is shown.

  As shown by the plot line 620 in FIG. 13, the band near the spin torque resonance frequency of the first magnetoresistive element 101a and the band near the spin torque resonance frequency of the first magnetoresistive element 101b are cutoff bands. Becomes In addition, the second magnetoresistance effect element 101c allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the lower frequency side (lower than the above cutoff band). (Frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high frequency signal passes, the ratio of the attenuation of the high frequency signal to the attenuation of the high frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101a and near the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive effect device 600 in this case functions as a band rejection filter having a steep shoulder characteristic on the low frequency side of the rejection band as shown by the plot line 620 in FIG. In this case, the change in the amount of attenuation of the high-frequency signal with respect to the frequency is sharp near the spin torque resonance frequency of the second magnetoresistance effect element 101c. It is preferable to match the lower limit frequency of the cutoff band used.

  Similarly, when the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. In other words, the magnetoresistive device 600 functions as a band rejection filter having a steep shoulder characteristic on the high frequency side of the rejection band. In this case, it is preferable that the spin torque resonance frequency of the second magnetoresistive element 101c is made to coincide with the upper limit frequency of the cutoff band to be used.

  14 and 15 are graphs showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 600 and the amount of attenuation. 14 and 15, the vertical axis represents the attenuation, and the horizontal axis represents the frequency. FIG. 14 is a graph when the magnetic field applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is constant. A plot line 631 in FIG. 14 is obtained when the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia1. , Plot line 632 is when the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia2. The relationship between the DC current values at this time is Ia1 <Ia2. FIG. 15 is a graph when the DC current applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is constant. A plot line 641 in FIG. 15 is obtained when the magnetic field intensity applied from the magnetic field applying mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb1. A line 642 is when the magnetic field intensity applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the magnetic field applying mechanism 111 is Hb2. The relationship of the magnetic field strength at this time is Hb1 <Hb2.

  For example, as shown in FIG. 14, the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is increased from Ia1 to Ia2. In this case, the amount of change in the element impedance of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c at a frequency near the spin torque resonance frequency increases with a change in the current value. The output from the second port 109b in a band near the spin torque resonance frequency of the first magnetoresistive element 101a and in a band (cutoff band) near the spin torque resonance frequency of the first magnetoresistive element 101b. The high-frequency signal to be transmitted is further reduced, and the transmission loss is increased. At the same time, in a band near the spin torque resonance frequency of the second magnetoresistance effect element 101c, the high-frequency signal output from the second port 109b further increases. Therefore, the magnetoresistive effect device 600 can realize a high-frequency filter having a wide range of cutoff characteristics and pass characteristics and further having a steep shoulder characteristic. When the DC current value is increased from Ia1 to Ia2, the spin torque resonance frequency of the first magnetoresistance effect element 101a changes from fd1 to fd2, and the spin torque resonance frequency of the first magnetoresistance effect element 101b changes from fe1 to fe2. The spin torque resonance frequency of the second magnetoresistive element 101c shifts from fg1 to fg2. That is, the stop band shifts to the lower frequency side. That is, the magnetoresistive effect device 100 can also function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the stop band.

Further, for example, as shown in FIG. 15, when the magnetic field intensity applied from the magnetic field applying mechanism 111 is increased from Hb1 to Hb2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fh1 to fh2, The spin torque resonance frequency of the first magnetoresistance effect element 101b shifts from fi1 to fi2, and the spin torque resonance frequency of the second magnetoresistance effect element 101c shifts from fj1 to fj2. That is, the stop band shifts to the higher frequency side. Further, changing the magnetic field strength (effective magnetic field H _eff in the magnetization free layer 104) can shift the stop band to a greater extent than changing the DC current value. That is, the magnetoresistive device 600 can function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the cutoff band.

Note that, as the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to each magnetoresistive element increases, the amplitude of the oscillating resistance value of each magnetoresistive element decreases. As the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to the resistance effect element is increased, it is preferable to increase the current density of the DC current applied to each magneto-resistance effect element.

  Further, in the magnetoresistive device 600, the number of the first magnetoresistive elements may be one (one of the first magnetoresistive elements 101a and 101b).

  As described above, the magnetoresistive device 600 includes two first magnetoresistive devices 101a and 101b, a second magnetoresistive device 101c, a first port 109a to which a high-frequency signal is input, and a high-frequency signal. Is output, a signal line 107, and a DC current input terminal 110 (DC application terminal). The first port 109a, the two first magnetoresistive elements 101a, 101b, and The second port 109b is connected in series in this order via the signal line 107, and the second magnetoresistive element 101c is connected to the signal line 107 in parallel with the second port 109b and the two first The magneto-resistance effect elements 101a and 101b and the second magneto-resistance effect element 101c are respectively provided with a magnetization fixed layer 102, a magnetization free layer 104, and The first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c have one end on the DC current input terminal 110 (DC application terminal) side. The first and second magnetoresistive elements 101a and 101b and the second magnetoresistive element are connected to the DC current input terminal 110 (DC applying terminal) and the reference potential terminal 114 such that the other end is on the reference potential terminal 114 side. 101c indicates the relationship between the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102. The first magnetoresistance effect elements 101a and 101b and the second magnetic field The resistance effect element 101c is formed to be the same. The first magnetoresistance effect element 101a is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the first magnetoresistance effect element 101a. The first magnetoresistance effect element 101b is formed so that a direct current input from a direct current input terminal 110 (direct current application terminal) is magnetized in the first magnetoresistance effect element 101b. The second magnetoresistance effect element 101c is formed so as to flow in the direction from the layer 102 to the magnetization free layer 104. It is formed so as to flow from the magnetization fixed layer 102 to the magnetization free layer 104 in the element 101c. Spin torque resonance frequencies of the magnetoresistive element 101c is different from each other, the spin torque resonant frequency of the spin torque resonant frequency and the second magnetoresistance effect element 101c of the first magnetoresistive element 101b are different each other.

  Therefore, when a high-frequency signal is input from the first port 109a to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c via the signal line 107, the two first magnetoresistive elements 101a and 101b are connected to each other. Spin torque resonance can be induced in the magnetoresistance effect elements 101a and 101b and the second magnetoresistance effect element 101c. Simultaneously with the spin torque resonance, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the two first magnetoresistive elements 101a and 101b. The element impedance of the first magnetoresistance effect element 101a with respect to the same frequency as the spin torque resonance frequency increases, and the element of the first magnetoresistance effect element 101b with respect to the same frequency as the spin torque resonance frequency of the first magnetoresistance effect element 101b. The impedance increases. Similarly, at the same time as the spin torque resonance, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the second magnetoresistance effect element 101c, so that the spin torque of the second magnetoresistance effect element 101c is increased. The element impedance of the second magnetoresistance effect element 101c for the same frequency as the resonance frequency increases.

  Since the first port 109a, the two first magnetoresistive elements 101a and 101b, and the second port 109b are connected in series in this order, the first magnetoresistive elements 101a and 101b output low-frequency signals. At the non-resonant frequency in the impedance state, the signal can pass to the second port 109b side, and at the resonance frequency when the first magnetoresistive elements 101a and 101b are in the high impedance state, the signal can be cut off from the second port 109b. . Further, since the second magneto-resistance effect element 101c is connected to the signal line 107 in parallel with the second port 109b, the second magneto-resistance effect element 101c is in a high impedance state. At the resonance frequency, it can be passed to the second port 109b side, and at the non-resonance frequency where the second magnetoresistive element 101c is in a low impedance state, it can be cut off to the second port 109b. As described above, the magnetoresistance effect device 600 converts the high-frequency signal input from the first port 109a into a frequency near the spin torque resonance frequency of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b. Can be cut off at the frequency near the spin torque resonance frequency of the second port 109b, and at the frequency near the spin torque resonance frequency of the second magnetoresistive element 101c, Can be passed through. That is, the magnetoresistive device 600 has the minimum value of the amount of passage of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. At the spin torque resonance frequency of the magnetoresistive effect element 101c, and functions as a high frequency filter.

  In the magnetoresistance effect device 600, a band near the spin torque resonance frequency of the first magnetoresistance effect element 101a or a band near the spin torque resonance frequency of the first magnetoresistance effect element 101b is a cutoff band. Since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is the first Since the frequency is higher or lower than the spin torque resonance frequency of the magnetoresistive element 101a), the high frequency signal is transmitted to the second port 109b on the high frequency side or the low frequency side of the first magnetoresistance effect element 101a. Can be passed. Further, since the spin torque resonance frequency of the first magnetoresistance effect element 101b and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is High frequency signal is higher or lower than the spin torque resonance frequency of the first magnetoresistance effect element 101b), and the high frequency signal is transmitted to the second port on the high frequency side or low frequency side of the spin torque resonance frequency of the first magnetoresistance effect element 101b. 109b side. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high frequency signal passes, the ratio of the attenuation of the high frequency signal to the attenuation of the high frequency signal in the cutoff band can be further reduced. The shoulder characteristic on the high frequency side or the low frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101a or near the spin torque resonance frequency of the first magnetoresistance effect element 101b can be sharpened. become. That is, the magnetoresistive effect device 600 can function as a band rejection filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the rejection band.

  Furthermore, the magnetoresistance effect device 600 has two first magnetoresistance effect elements 101a and 101b having different spin torque resonance frequencies from each other, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is two Since the spin torque resonance frequency of each of the first magneto-resistance effect elements 101a and 101b is higher than the spin torque resonance frequency of each of the two first magneto-resistance effect elements 101a and 101b, it has a wide cut-off band. It becomes possible to function as a band rejection filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the band.

  Further, in the above description, the example in which the two first magnetoresistive elements 101a and 101b are connected to each other in series has been described. The number of magnetoresistive elements may be three or more. Further, a plurality of first magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, the first port 109a, the respective first magnetoresistive elements, and the second port 109b are connected in series in this order via the signal line 107. Similar to the magnetoresistive device 600, it can have a frequency characteristic as a high frequency filter.

  In the above description, the second magnetoresistive element 101c is connected in parallel to the second port 109b to the signal line 107 between the first magnetoresistive element 101b and the second port 109b. In the example described above, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. Similarly to the case, the second magneto-resistance effect element 101c is connected to the signal line 107 between the first magneto-resistance effect element 101a and the first port 109a in parallel with the second port 109b. Then, the DC current input terminal 110 may be connected to the signal line 107 between the first magnetoresistive element 101b and the second port 109b.

(Seventh embodiment)
FIG. 16 is a schematic sectional view of a magnetoresistive device 700 according to the seventh embodiment of the present invention. In the magnetoresistive device 700, the points different from the magnetoresistive device 600 of the sixth embodiment will be mainly described, and the common items will not be further described. Elements common to the magnetoresistive device 600 of the sixth embodiment are denoted by the same reference numerals, and descriptions of common elements are omitted. The magnetoresistive device 700 has an inductor 113 and a reference potential terminal 115 in addition to the components of the magnetoresistive device 600 of the sixth embodiment. The inductor 113 is connected in parallel with the second port 109b to the signal line 107 (the first magnetoresistance effect element 101a, 101b) between the two first magnetoresistance effect elements 101a, 101b and the first port 109a. Signal line 107 between the first port 101b and the first port 109a, or one of the signal lines 107 between the first magnetoresistive elements 101a and 101b and the second port 109b), and a reference potential terminal. It is connected to the ground 115 via the reference potential terminal 115. The DC current input terminal 110 is connected to the signal line 107 between the two first magnetoresistive elements 101a and 101b and the second port 109b (the first magnetoresistive elements 101a and 101b and the first port 109a are connected to each other). (The other of the signal lines 107 between the first magnetoresistive elements 101a and 101b and the second port 109b). The second magnetoresistive element 101c is connected to the signal line 107 of the inductor 113 in parallel with the second port 109b with at least one of the two first magnetoresistive elements 101a and 101b interposed therebetween. Is connected to the signal line 107 on the opposite side of the signal line 107. More specifically, one end (on the side of the magnetization free layer 104) of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101b and the second port 109b. The other end (the magnetization fixed layer 102 side) of the second magnetoresistive element 101c is connected to a reference potential terminal 114 and can be connected to the ground 108 via the reference potential terminal 114. When the DC current source 112 is connected to the DC current input terminal 110 and the ground 108, the magnetoresistive device 700 is configured to have two first magnetoresistive elements 101a and 101b, the signal line 107, the inductor 113, the ground 108, and A closed circuit including the DC current input terminal 110 and a closed circuit including the second magnetoresistive element 101c, the signal line 107, the ground 108, and the DC current input terminal 110 can be formed.

  In the first magnetoresistance effect elements 101a and 101b, one end side (in this example, the magnetization free layer 104 side) is on the DC current input terminal 110 side, and the other end side (in this example, on the magnetization fixed layer 102 side). ) Is connected to the DC current input terminal 110 and the reference potential terminal 115 so that the reference potential terminal 115 is on the reference potential terminal 115 side. The second magnetoresistive element 101c has one end (in this example, the magnetization free layer 104) on the DC current input terminal 110 side and the other end (in this example, magnetization fixed layer 102) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magneto-resistance effect device 700, the first magneto-resistance effect elements 101a and 101b and the second magneto-resistance effect element 101c are oriented from one end to the other end and from the respective magnetization free layers 104. The two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are formed (arranged) so that the relationship with the direction toward the magnetization fixed layer 102 is the same for the two first magnetoresistive elements 101a and 101b.

  The first magnetoresistance effect element 101a is connected to the signal line 107 such that the magnetization fixed layer 102 side is on the first port 109a side, and the DC current input from the DC current input terminal 110 is applied to the first magnetoresistance element 101a. It is formed (arranged) so as to flow in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the effect element 101a. The first magnetoresistance effect element 101b is connected to the signal line 107 such that the magnetization fixed layer 102 side is on the first port 109a side, and a DC current input from the DC current input terminal 110 is applied to the first magnetoresistance element 101b. It is formed (arranged) so as to flow in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the effect element 101b. That is, in the magnetoresistance effect device 700, the direction of the DC current flowing in each of the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c, and the respective magnetizations The relationship between the arrangement of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is the same for the first magnetoresistive element 101a, the first magnetoresistive element 101b, and the second magnetoresistive element 101c. ing. Other configurations of the magnetoresistive device 700 are the same as those of the magnetoresistive device 600 of the sixth embodiment.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and includes a closed circuit including the two first magnetoresistive elements 101a and 101b, the signal line 107, the inductor 113, the ground 108, and the DC current input terminal 110. Is formed. Further, a closed circuit including the second magnetoresistance effect element 101c, the signal line 107, the ground 108, and the DC current input terminal 110 is formed.

  As described in the second embodiment, the inductor 113 is connected between the signal line 107 and the ground 108 and has a function of cutting a high-frequency component of the current by the inductor component and passing an invariant component of the current. . The two inductors 113a and 101b, the signal line 107, the inductor 113, A DC current applied from the DC current input terminal 110 can flow through a closed circuit including the ground 108 and the DC current input terminal 110.

  In the above description, the second magnetoresistive element 101c is connected in parallel to the second port 109b to the signal line 107 between the first magnetoresistive element 101b and the second port 109b. Although the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101b and the first port 109a, the second direct current input terminal 110 is connected to the second magnetoresistive element 101c. One of the DC current input terminal 110 and the DC current input terminal 110 may be connected to the signal line 107 between the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b.

  The magnetoresistive device 700 can have a frequency characteristic as a high-frequency filter, similar to the magnetoresistive device 600 of the sixth embodiment.

  In the magnetoresistive device 600 according to the sixth embodiment and the magnetoresistive device 700 according to the seventh embodiment, in order to further increase the cut-off band and sharpen the shoulder characteristics, the second step is to make the shoulder characteristics sharp. Is preferably larger than the Q value of at least one of the first magnetoresistive element 101a and the first magnetoresistive element 101b forming the cutoff band.

(Eighth embodiment)
FIG. 17 is a schematic sectional view of a magnetoresistance effect device 800 according to the eighth embodiment of the present invention. In the magnetoresistive device 800, points different from the magnetoresistive device 300 of the third embodiment will be mainly described, and description of common items will be omitted as appropriate. Elements common to the magnetoresistive device 300 of the third embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistive device 800 is different from the magnetoresistive device 300 of the third embodiment in the direction of the DC current flowing in the first magnetoresistive device 101a and the two second magnetoresistive devices 101c and 101d. The direction of the direct current flowing through the inside is different. In the magneto-resistance effect device 800, the first magneto-resistance effect element 101a is configured such that a direct current input from the direct-current input terminal 110 flows through the first magneto-resistance effect element 101a from the magnetization fixed layer 102 to the magnetization free layer 104. (Flow direction). The second magnetoresistance effect element 101c is formed such that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101b from the magnetization fixed layer 102 to the magnetization free layer 104. (Placed). The second magnetoresistance effect element 101d is formed such that a DC current input from the DC current input terminal 110 flows through the second magnetoresistance effect element 101d from the magnetization fixed layer 102 to the magnetization free layer 104. (Placed). That is, in the magnetoresistance effect device 800, the direction of the DC current flowing in each of the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d, the respective magnetization fixed layers 102, and the spacers The relationship between the arrangement order of the layer 103 and the magnetization free layer 104 is the same for the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d. Other configurations of the magnetoresistive device 800 are the same as those of the magnetoresistive device 300 of the third embodiment.

  As described in the sixth embodiment, in the magneto-resistance effect device 800, the first magneto-resistance effect element 101a and the two second magneto-resistance effect elements 101c and 101d are caused by spin torque resonance due to spin torque resonance. It can be handled as a resistance element in which the impedance of a high-frequency signal increases with frequency.

  Due to the spin torque resonance phenomenon, a frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency component of the high frequency signal input from the first port 109a Is hardly output to the second port 109b by the first magnetoresistive element 101a in a high impedance state. On the other hand, a frequency component that is not near the spin torque resonance frequency of the first magnetoresistance effect element 101a in the high frequency signal of the high frequency signal passes through the first magnetoresistance effect element 101a in the low impedance state, and the second port 109b.

  Further, due to the spin torque resonance phenomenon, the spin of the second magnetoresistive element 101c in the high-frequency components of the high-frequency signal input from the first port 109a (the high-frequency signal passed through the first magnetoresistive element 101a). A frequency component that matches the torque resonance frequency or is near the spin torque resonance frequency is cut off from the ground 108 by the high impedance second magnetoresistance effect element 101c connected in parallel to the second port 109b, It becomes easier to output to the second port 109b. On the other hand, a frequency component of the high-frequency signal that is not near the spin torque resonance frequency of the second magneto-resistance effect element 101c flows through the low-impedance second magneto-resistance effect element 101c to the ground 108. , It is difficult to output to the second port 109b. Similarly, the high-frequency component of the high-frequency signal input from the first port 109a (the high-frequency signal passed through the first magneto-resistance effect element 101a) matches the spin torque resonance frequency of the second magneto-resistance effect element 101d. Or a frequency component near the spin torque resonance frequency is cut off from the ground 108 by the second magnetoresistive element 101d in a high impedance state, which is connected in parallel to the second port 109b. Frequency components that are not near the spin torque resonance frequency of the second magnetoresistance effect element 101d among the high frequency components of the high frequency signal pass through the low impedance state second magnetoresistance effect element 101c. It flows to the ground 108 and becomes difficult to be output to the second port 109b.

  FIG. 18 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 800 and the amount of attenuation. The vertical axis in FIG. 18 represents the attenuation, and the horizontal axis represents the frequency. A plot line 820 in FIG. 18 indicates a case where the magnetic field applied to the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d is constant and the applied DC current is constant. It is a graph. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c, and fd is the spin torque resonance frequency of the second magnetoresistance effect element 101d. Frequency. In FIG. 18, the spin torque resonance frequency of the first magnetoresistance effect element 101a is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d. An example is shown.

  As shown by the plot line 820 in FIG. 18, the band near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the band near the spin torque resonance frequency of the second magnetoresistance effect element 101d are the passbands. Becomes Further, the first magnetoresistance effect element 101a allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the lower frequency side (lower than the above passband). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the first magnetoresistive element 101a where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the passband formed near the spin torque resonance frequency of the resistance effect element 101c and near the spin torque resonance frequency of the second magnetoresistance effect element 101d can be made steep. That is, the magnetoresistive effect device 800 in this case functions as a bandpass filter having a steep shoulder characteristic on the low frequency side of the passband as shown by the plot line 820 in FIG. In this case, the change in the amount of attenuation of the high-frequency signal with respect to the frequency is sharp near the spin torque resonance frequency of the first magnetoresistance effect element 101a. It is preferable to match the lower limit frequency of the pass band used.

  Similarly, when the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d. In other words, the magnetoresistive device 800 functions as a bandpass filter having a steep shoulder characteristic on the high frequency side of the passband. In this case, it is preferable to make the spin torque resonance frequency of the first magnetoresistance effect element 101a coincide with the upper limit frequency of the pass band to be used.

  Further, the DC current applied to the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements 101c and 101d, or the magnetic field applying mechanism 111 is connected to the first magnetoresistance effect element 101a and the two second magnetoresistance effect elements. The pass band can be shifted by changing the magnetic field applied to the magnetoresistive elements 101c and 101d. That is, the magnetoresistive device 800 can function as a high-frequency filter having a steep shoulder characteristic that can change the frequency of the pass band.

  Further, in the magneto-resistance effect device 800, the number of the second magneto-resistance effect element may be one (one of the second magneto-resistance effect elements 101c and 101d).

  As described above, the magnetoresistance effect device 800 includes the first magnetoresistance effect element 101a, the two second magnetoresistance effect elements 101c and 101d, the first port 109a to which a high-frequency signal is input, and the high-frequency signal. , A signal line 107, and a DC current input terminal 110 (DC application terminal). The first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order via the signal line 107, and the two second magnetoresistive elements 101c and 101d are connected to the signal line 107 in parallel with the second port 109b, and the first magnetoresistance The effect element 101a and the two second magnetoresistive elements 101c and 101d are respectively provided with the magnetization fixed layer 102, the magnetization free layer 104, and the The first magnetoresistive element 101a and the second magnetoresistive elements 101c and 101d each have one end on the DC current input terminal 110 (DC application terminal) side. The first and second magnetoresistance effect elements 101a and 101c are connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 such that the other end is on the reference potential terminal 114 side. 101d indicates the relationship between the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102. The first magnetoresistance effect element 101a and the second magnetoresistance effect The elements 101c and 101d are formed so as to be the same. The first magnetoresistance effect element 101a is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the first magnetoresistance effect element 101a. The second magnetoresistance effect element 101c is formed so that a direct current input from a direct current input terminal 110 (direct current application terminal) is magnetized in the second magnetoresistance effect element 101c. The second magnetoresistance effect element 101d is formed so as to flow in the direction from the layer 102 to the magnetization free layer 104. The DC current input from the DC current input terminal 110 (DC application terminal) is applied to the second magnetoresistance effect element. It is formed so as to flow in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the element 101d. Spin torque resonance frequency of the magnetoresistive element 101c are different from each other, the spin torque resonance frequency of the spin torque resonance frequency and the second magnetoresistive element 101d of the first magnetoresistive element 101a are different from each other.

  Therefore, when a high-frequency signal is input from the first port 109a to the first magnetoresistive element 101a and the two second magnetoresistive elements 101c and 101d via the signal line 107, the first magnetoresistive element Spin torque resonance can be induced in the effect element 101a and the two second magnetoresistive elements 101c and 101d. Simultaneously with the spin torque resonance, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the first magnetoresistance effect element 101a, so that the spin torque resonance frequency of the first magnetoresistance effect element 101a is increased. The element impedance of the first magnetoresistive element 101a for the same frequency as that of the first element increases. Similarly, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the second magnetoresistance effect elements 101c and 101d at the same time as the spin torque resonance, so that the second magnetoresistance effect element 101c The element impedance of the second magnetoresistance effect element 101c for the same frequency as the spin torque resonance frequency increases, and the element of the second magnetoresistance effect element 101d for the same frequency as the spin torque resonance frequency of the second magnetoresistance effect element 101d. The impedance increases.

  Since the first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order, the high-frequency signal is transmitted to the non-resonant state where the first magnetoresistive element 101a is in a low impedance state. At the frequency, it can be passed to the second port 109b side, and at the resonance frequency where the first magnetoresistive element 101a is in a high impedance state, it can be cut off to the second port 109b. Further, by connecting the two second magneto-resistance effect elements 101c and 101d to the signal line 107 in parallel with the second port 109b, high-frequency signals can be transmitted to the second magneto-resistance effect elements 101c and 101d. Is passed to the second port 109b side at the resonance frequency where the impedance is in the high impedance state, and cut off to the second port 109b at the non-resonance frequency where the second magnetoresistive elements 101c and 101d are in the low impedance state. Can be done. As described above, the magnetoresistance effect device 800 converts the high frequency signal input from the first port 109a to the second port 109b at a frequency near the spin torque resonance frequency of the first magnetoresistance effect element 101a. At a frequency near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d. Can be done. In other words, the magnetoresistance effect device 800 has a minimum value of the amount of passing of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the second At the spin torque resonance frequency of the magnetoresistive effect element 101d, and functions as a high frequency filter.

  In the magneto-resistance effect device 800, a band near the spin torque resonance frequency of the second magneto-resistance effect element 101c or a band near the spin torque resonance frequency of the second magneto-resistance effect element 101d is a pass band. Since the spin torque resonance frequency of the first magneto-resistance effect element 101a and the spin torque resonance frequency of the second magneto-resistance effect element 101c are different from each other (the spin torque resonance frequency of the first magneto-resistance effect element 101a is Since the spin torque resonance frequency of the magnetoresistive element 101c is higher or lower than the spin torque resonance frequency of the magnetoresistive effect element 101c), a high frequency signal is supplied to the second port 109b on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistive effect element 101c. Can be blocked. Further, since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101d are different from each other (the spin torque resonance frequency of the first magnetoresistance effect element 101a is 2 is higher or lower than the spin torque resonance frequency of the second magnetoresistive element 101d), and the high frequency signal is transmitted to the second port on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101d. 109b. In the vicinity of the spin torque resonance frequency of the first magnetoresistive element 101a where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristic on the high frequency side or the low frequency side of the passband formed near the spin torque resonance frequency of the resistance effect element 101c or near the spin torque resonance frequency of the second magnetoresistance effect element 101d can be made steep. Will be possible. That is, the magnetoresistive device 800 can function as a bandpass filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the passband.

  Furthermore, the magnetoresistance effect device 800 has two second magnetoresistance effect elements 101c and 101d having different spin torque resonance frequencies from each other, and the spin torque resonance frequency of the first magnetoresistance effect element 101a is It has a wider pass band since it is higher than the spin torque resonance frequency of each of the two magnetoresistive elements 101c and 101d or lower than the spin torque resonance frequency of each of the two second magnetoresistive elements 101c and 101d. It is possible to function as a band-pass filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the band.

  Further, in the above description, the example in which the two second magnetoresistance effect elements 101c and 101d are connected in series has been described. The number of magnetoresistive elements may be three or more. Further, a plurality of second magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, each of the second magnetoresistive elements is connected to the signal line 107 in parallel with the second port 109b. Can have a frequency characteristic as a high-frequency filter.

  In the above description, the two second magnetoresistance elements 101c and 101d are connected in parallel with the second port 109b between the first magnetoresistance element 101a and the second port 109b. In the third embodiment, the DC current input terminal 110 is connected to the signal line 107, and the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. Similarly to the case described in the embodiment, the two second magneto-resistance effect elements 101c and 101d are connected in parallel with the second port 109b, and the first magneto-resistance effect element 101a and the first port 109a are connected to each other. And the DC current input terminal 110 may be connected to the signal line 107 between the first magnetoresistive element 101a and the second port 109b. .

  In the same manner as in the seventh embodiment, with respect to the magnetoresistance effect device 800 of the eighth embodiment, the inductor 113 is connected in parallel with the second port 109b to the first magnetoresistance effect element 101a. Signal line 107 between the first port 109a and the first port 109a (the signal line 107 between the first magnetoresistive element 101a and the first port 109a, or the first magnetoresistive element 101a and the second port DC signal input terminal 110 is connected to signal line 107 (first magnetoresistive effect) between first magnetoresistive element 101a and second port 109b. Connected to the signal line 107 between the element 101a and the first port 109a or the other of the signal line 107 between the first magnetoresistive element 101a and the second port 109b). Where the two second magnetoresistive elements 101c and 101d are connected in parallel to the second port 109b and the connection point of the inductor 113 to the signal line 107 across the first magnetoresistive element 101a. The connection may be made to the signal line 107 on the opposite side.

  In the magnetoresistance effect device 800 according to the eighth embodiment, in order to further increase the pass band and sharpen the shoulder characteristics, the Q value of the first magnetoresistance effect element 101a that sharpens the shoulder characteristics is passed. It is preferable that the Q value of at least one of the second magnetoresistance effect element 101c and the second magnetoresistance effect element 101d that form the band be larger than the Q value.

(Ninth embodiment)
FIG. 19 is a schematic sectional view of a magnetoresistance effect device 900 according to the ninth embodiment of the present invention. In the magnetoresistive device 900, the points different from the magnetoresistive device 600 of the sixth embodiment will be mainly described, and the common items will not be described. Elements common to the magnetoresistive device 600 of the sixth embodiment are denoted by the same reference numerals, and descriptions of common elements are omitted. The magnetoresistance effect device 900 further includes a third magnetoresistance effect element 101e in addition to the magnetoresistance effect device 600 of the sixth embodiment. The third magnetoresistive element 101e includes a magnetization fixed layer 102 (third magnetization fixed layer), a magnetization free layer 104 (third magnetization free layer), and a spacer layer 103 (third magnetization free layer) disposed therebetween. Spacer layer). The third magnetoresistive element 101e is connected to the signal line 107 in parallel with the second port 109b. Similarly to the second magnetoresistance effect element 101c, the third magnetoresistance effect element 101e is connected in parallel with the second port 109b to the two first magnetoresistance effect elements 101a and 101b and the second port 109b. The signal line 107 is connected to the signal line 107b. More specifically, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in series with each other, and one end (on the magnetization free layer 104 side) of the third magnetoresistance effect element 101e is The other end of the third magnetoresistance effect element 101e (the magnetization fixed layer) is connected to the signal line 107 (second magnetoresistance effect element 101c) between the first magnetoresistance effect element 101b and the second port 109b. 102 side) is connected to the reference potential terminal 114 and can be connected to the ground 108 via the reference potential terminal 114.

  The third magnetoresistance effect element 101e has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side and the other end side (in this example, the magnetization fixed layer 102 side) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistance effect device 900, the first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e are oriented from one end to the other. And the relationship between the directions from the respective magnetization free layers 104 to the magnetization pinned layers 102, the two first magnetoresistance elements 101a and 101b, the second magnetoresistance element 101c, and the third magnetoresistance element. It is formed (arranged) so as to be the same as 101e. In this example, in each of the first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e, the direction from one end to the other end and the magnetization The direction from the free layer 104 to the magnetization fixed layer 102 has the same direction.

  The third magnetoresistance effect element 101e is formed such that a DC current input from the DC current input terminal 110 flows in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the third magnetoresistance effect element 101e. (Placed). That is, in the magnetoresistance effect device 900, the current flows through each of the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e. The relationship between the direction of the DC current and the arrangement order of the magnetization fixed layer 102, the spacer layer 103, and the magnetization free layer 104 depends on the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101b. The same applies to the magneto-resistance effect element 101c and the third magneto-resistance effect element 101e. Further, the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of each of the two first magnetoresistance effect elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is increased. The torque resonance frequency is lower than the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b.

  After the high-frequency signal input from the first port 109a passes through the two first magnetoresistive elements 101a and 101b, a part of the high-frequency signal is transmitted to the second magnetoresistive element 101c and the third magnetic element. The remaining high-frequency signal is sent to the resistance effect element 101e and output to the second port 109b.

  The third magnetoresistance effect element 101e has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 (second magnetoresistance effect element 101c) via the upper electrode 105, and the other end (magnetization fixed). The layer 102 side) is electrically connected to the ground 108 via the lower electrode 106 and the reference potential terminal 114.

  The DC current input terminal 110 is opposite to the connection point of the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e to the signal line 107 across the two first magnetoresistance effect elements 101a and 101b. It is connected to the signal line 107 on the side. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a. When the DC current source 112 is connected to the DC current input terminal 110, the DC current is supplied to the two first magnetoresistance elements 101a and 101b, the second magnetoresistance element 101c, and the third magnetoresistance element 101e. Can be applied.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and is connected to the two first magnetoresistance elements 101a and 101b, the signal line 107, the second magnetoresistance element 101c, and the third magnetoresistance effect. A closed circuit including the element 101e, the ground 108, and the DC current input terminal 110 is formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit.

  The magnetic field applying mechanism 111 is disposed near the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e, and includes two first magnetoresistive elements 101a and 101b. By applying a magnetic field to the effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e, the spin torque resonance frequency of each magnetoresistance effect element can be set.

  Other configurations of the magnetoresistance effect device 900 are the same as those of the magnetoresistance effect device 600 of the sixth embodiment.

  In the magneto-resistance effect device 900, the third magneto-resistance effect element 101e is configured such that a DC current input from the DC current input terminal 110 flows through the third magneto-resistance effect element 101e from the magnetization fixed layer 102 to the magnetization free layer 104. , And can be treated as a resistance element whose impedance of a high-frequency signal increases at the spin torque resonance frequency due to the spin torque resonance phenomenon, similarly to the second magnetoresistance effect element 101c.

  Due to the spin torque resonance phenomenon, the third magneto-resistance effect element 101e is included in the high-frequency components of the high-frequency signal input from the first port 109a (the high-frequency signal passing through the two first magneto-resistance elements 101a and 101b). The frequency component that matches or is close to the spin torque resonance frequency is cut off from the ground 108 by the high impedance third magnetoresistive element 101e connected in parallel to the second port 109b. Thus, the data is easily output to the second port 109b. On the other hand, among the high frequency components of the high frequency signal, the frequency components that are not near the spin torque resonance frequency of the third magnetoresistance effect element 101e pass through the low impedance state third magnetoresistance effect element 101e and flow to the ground 108. , It is difficult to output to the second port 109b.

  FIG. 20 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistance effect device 900 and the amount of attenuation. In FIG. 20, the vertical axis represents the attenuation, and the horizontal axis represents the frequency. The plot line 920 in FIG. 20 indicates that the magnetic field applied to the two first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101e is constant and the applied magnetic field is constant. 7 is a graph when the applied DC current is constant. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c. And fe is the spin torque resonance frequency of the third magnetoresistance effect element 101e.

  As shown by the plot line 920 in FIG. 20, the band near the spin torque resonance frequency of the first magnetoresistive element 101a and the band near the spin torque resonance frequency of the first magnetoresistive element 101b are cutoff bands. Becomes Further, the second magnetoresistance effect element 101c allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the higher frequency side (higher than the above cutoff band). (Frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high frequency signal passes, the ratio of the attenuation of the high frequency signal to the attenuation of the high frequency signal in the cutoff band can be further reduced. This makes it possible to sharpen the shoulder characteristics on the high frequency side of the stop band formed near the spin torque resonance frequency of the effect element 101a and near the spin torque resonance frequency of the first magnetoresistive element 101b. Further, the third magnetoresistance effect element 101e allows the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b to be on the lower frequency side (lower than the above cutoff band). (Frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the third magnetoresistance effect element 101e through which the high frequency signal passes, the ratio of the attenuation of the high frequency signal to the attenuation of the high frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed near the spin torque resonance frequency of the effect element 101a and near the spin torque resonance frequency of the first magnetoresistive element 101b can be made steep. That is, the magnetoresistive effect device 900 functions as a band rejection filter having a steep shoulder characteristic on both the low frequency side and the high frequency side of the stop band, as shown by the plot line 920 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c and the vicinity of the spin torque resonance frequency of the third magnetoresistance effect element 101e, the change of the attenuation amount of the high frequency signal with respect to the frequency is sharp. Therefore, the spin torque resonance frequency of the second magnetoresistance effect element 101c is made to match the upper limit frequency of the cutoff band to be used, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is set to the lower limit frequency of the cutoff band to be used. Preferably.

  Further, in the magnetoresistance effect device 900, the first magnetoresistance effect element may be one (one of the first magnetoresistance effect elements 101a and 101b).

  As described above, the magnetoresistive device 900 further includes the third magnetoresistive device 101 e with respect to the magnetoresistive device 600, and the third magnetoresistive device 101 e is connected to the second port 109 b. The two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e, which are connected in parallel to the signal line 107, include a magnetization fixed layer 102 and a magnetization free layer. The third magnetoresistive element 101e has a DC current input terminal 110 (DC application terminal) at one end and a reference potential terminal 114 at the other end. Side, is connected to a DC current input terminal 110 (DC application terminal) and a reference potential terminal 114 so that the first a, 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e each have a direction from one end to the other end and a direction from the magnetization free layer 104 to the magnetization fixed layer 102. Are formed to be the same in the first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101e. The third magnetoresistance effect element 101e is configured such that a direct current input from a direct current input terminal 110 (direct current application terminal) flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the third magnetoresistance effect element 101e. The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the third magnetoresistance effect element 101e has The spin torque resonance frequency is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than that of the first magnetoresistance effect element 101b. The spin torque resonance frequency of the third magnetoresistance effect element 101e is higher than the spin torque resonance frequency, It is lower than the spin torque resonance frequency of 101b.

  Therefore, when a high-frequency signal is input to the third magnetoresistance effect element 101e from the first port 109a via the signal line 107, spin torque resonance can be induced in the third magnetoresistance effect element 101e. . At the same time as the spin torque resonance, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the third magnetoresistance effect element 101e, so that the spin torque resonance frequency of the third magnetoresistance effect element 101e is increased. The element impedance of the third magnetoresistive element 101e with respect to the same frequency increases.

  By connecting the third magnetoresistive element 101e to the signal line 107 in parallel with the second port 109b, the third magnetoresistive element 101e transmits a high-frequency signal to the resonance frequency at which the third magnetoresistive element 101e is in a high impedance state. Then, the light can be passed to the second port 109b side and cut off from the second port 109b at a non-resonant frequency where the third magnetoresistive element 101e is in a low impedance state.

  The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is higher than the first magnetic field. Since the spin torque resonance frequency of the resistance effect element 101a is lower than that of the first magnetoresistance effect element 101a, the high frequency signal can be passed to the second port side on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistance effect element 101a. it can. Further, the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the spin torque resonance frequency of the third magnetoresistance effect element 101e is the first. Is lower than the spin torque resonance frequency of the magnetoresistive element 101b, the high frequency signal is passed to the second port side on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistance effect element 101b. be able to. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high frequency signal passes and in the vicinity of the spin torque resonance frequency of the third magnetoresistance effect element 101e, the attenuation of the high frequency signal in the cutoff band with respect to the attenuation. Of the first magnetoresistive element 101a or near the spin torque resonance frequency of the first magnetoresistive element 101b. It becomes possible to sharpen the shoulder characteristics on both the frequency side and the low frequency side. That is, the magnetoresistive device 400 can function as a band-stop filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the cut-off band.

  Furthermore, since the magnetoresistive device 900 has two first magnetoresistive devices 101a and 101b having different spin torque resonance frequencies, it has a wide cut-off band and the spin torque resonance of the second magnetoresistive device 101c. The frequency is higher than the spin torque resonance frequency of each of the two first magnetoresistance elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistance element 101e is two first magnetoresistance elements. Since it is lower than the spin torque resonance frequency of each of 101a and 101b, it is possible to function as a band rejection filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the rejection band.

  Further, in the above description, an example has been described in which the two first magnetoresistive elements 101a and 101b are connected to each other in series. The number of magnetoresistive elements may be three or more. Further, a plurality of first magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, the first port 109a, each of the first magnetoresistive elements and the second port 109b are connected in series in this order via the signal line 107. Similar to the magnetoresistive device 900, it can have frequency characteristics as a high frequency filter.

  Further, in the above description, the example in which the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in series has been described, but the same as in the case described in the fourth embodiment. Thus, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e may be connected in parallel with each other. Even in this case, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected to the signal line 107 in parallel with the second port 109b. As with the magnetoresistive device 900, it can have frequency characteristics as a high-frequency filter.

  Further, in the above description, the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101e are connected in parallel to the second port 109b, and the first magnetoresistance effect element 101b and the second In the example described above, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. Similarly to the case described in the fourth embodiment, the second magneto-resistance effect element 101c and the third magneto-resistance effect element 101e are connected in parallel to the second port 109b by the first magneto-resistance effect element. The DC current input terminal 110 is connected to the signal line 107 between the effect element 101a and the first port 109a, and is connected between the first magnetoresistive element 101b and the second port 109b. It may be connected to the No. line 107. More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the third magnetoresistance element The magnetization fixed layer 102 side of the effect element 101e may be connected to the reference potential terminal 114 and connected to the ground 108 via the reference potential terminal 114.

  In the above description, as the magnetoresistance effect device 900, an example is described in which the third magnetoresistance effect element 101e is added to the magnetoresistance effect device 600 of the first embodiment. The third magneto-resistance effect element 101e may be similarly added to the magneto-resistance effect device 700 of the embodiment.

  In the magnetoresistive device 900 of the ninth embodiment, in order to further increase the cutoff band and sharpen the shoulder characteristics, the second magnetoresistive element 101c having the steep shoulder characteristics and the third magnetoresistance It is preferable that the Q value of each of the effect elements 101e be larger than the Q value of at least one of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b that form the cutoff band.

(Tenth embodiment)
FIG. 21 is a schematic sectional view of a magnetoresistive device 1000 according to the tenth embodiment of the present invention. In the magnetoresistive device 1000, the points different from the magnetoresistive device 800 of the eighth embodiment will be mainly described, and the common items will not be further described. Elements common to the magnetoresistive device 100 of the first embodiment and the magnetoresistive device 800 of the eighth embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistance effect device 1000 further includes a fourth magnetoresistance effect element 101f in addition to the magnetoresistance effect device 800 of the eighth embodiment. The fourth magnetoresistance effect element 101f includes a magnetization fixed layer 102 (fourth magnetization fixed layer), a magnetization free layer 104 (fourth magnetization free layer), and a spacer layer 103 (fourth magnetization free layer) disposed therebetween. Spacer layer). The first port 109a, the fourth magnetoresistive element 101f, and the second port 109b are connected in series in this order via the signal line 107. More specifically, the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f are connected to each other in series.

  The fourth magnetoresistance effect element 101f has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side, and the other end side (in this example, the magnetization fixed layer 102 side) on the reference potential terminal. It is connected to the DC current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. That is, in the magnetoresistive device 1000, the first magnetoresistive device 101a, the second magnetoresistive devices 101c and 101d, and the fourth magnetoresistive device 101f are oriented from one end to the other end. And the direction from the magnetization free layer 104 to the magnetization fixed layer 102 is determined by the relationship between the first magnetoresistive element 101a, the two second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element. It is formed (arranged) so as to be the same as 101f. In this example, in the first magnetoresistive element 101a, the second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element 101f, the direction from one end to the other end and the magnetization The direction from the free layer 104 to the magnetization fixed layer 102 has the same direction.

  The fourth magnetoresistance effect element 101f is formed such that a DC current input from the DC current input terminal 110 flows in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the fourth magnetoresistance effect element 101f. (Placed). That is, in the magnetoresistive device 1000, it flows through each of the first magnetoresistive device 101a, the second magnetoresistive device 101c, the second magnetoresistive device 101d, and the fourth magnetoresistive device 101f. The relationship between the direction of the DC current and the arrangement order of the respective magnetization fixed layers 102, spacer layers 103, and magnetization free layers 104 depends on the first magnetoresistance effect element 101a, the second magnetoresistance effect element 101c, and the second magnetoresistance effect element 101c. The same applies to the magnetoresistance effect element 101d and the fourth magnetoresistance effect element 101f. Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d, The spin torque resonance frequency of the magnetoresistance effect element 101f is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d.

  After the high-frequency signal input from the first port 109a passes through the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f, part of the high-frequency signal is converted into two second magnetoresistance effects. The remaining high-frequency signals passed through the elements 101c and 101d are output to the second port 109b.

  The fourth magnetoresistance effect element 101f has one end (on the magnetization free layer 104 side) electrically connected to the signal line 107 via the upper electrode 105, and the other end (on the magnetization fixed layer 102 side) via the lower electrode 106. And is electrically connected to the signal line 107.

  The DC current input terminal 110 is opposite to the connection point of the two second magnetoresistance effect elements 101c and 101d to the signal line 107 with the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f interposed therebetween. It is connected to the signal line 107 on the side. More specifically, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistance effect element 101a and the first port 109a. When the DC current source 112 is connected to the DC current input terminal 110, the DC current is supplied to the first magnetoresistance effect element 101a, the fourth magnetoresistance effect element 101f, and the two second magnetoresistance effect elements 101c and 101d. Can be applied.

  The DC current source 112 is connected to the ground 108 and the DC current input terminal 110, and has a first magnetoresistance effect element 101a, a fourth magnetoresistance effect element 101f, a signal line 107, and two second magnetoresistance effect elements 101c. , 101d, the ground 108 and the DC current input terminal 110 are formed. The DC current source 112 applies a DC current from the DC current input terminal 110 to the closed circuit.

  The magnetic field applying mechanism 111 is disposed near the first magnetoresistive element 101a, the fourth magnetoresistive element 101f, and the two second magnetoresistive elements 101c and 101d. By applying a magnetic field to 101a, the fourth magnetoresistive element 101f, and the two second magnetoresistive elements 101c and 101d, the spin torque resonance frequency of each magnetoresistive element can be set.

  Other configurations of the magnetoresistive device 1000 are the same as those of the magnetoresistive device 800 of the eighth embodiment.

  In the magneto-resistance effect device 1000, the fourth magneto-resistance effect element 101f is configured such that a DC current input from the DC current input terminal 110 flows through the fourth magneto-resistance effect element 101f from the magnetization fixed layer 102 to the magnetization free layer 104. Is formed so that the impedance of the high-frequency signal increases at the spin torque resonance frequency due to the spin torque resonance phenomenon, similarly to the first magnetoresistance effect element 101a.

  Due to the spin torque resonance phenomenon, a frequency component that matches the spin torque resonance frequency of the fourth magnetoresistive element 101f or is close to the spin torque resonance frequency in the high frequency components of the high frequency signal input from the first port 109a. Is hardly output to the second port 109b by the fourth magnetoresistive element 101f in a high impedance state. On the other hand, a frequency component of the high-frequency signal that is not near the spin torque resonance frequency of the fourth magneto-resistance effect element 101f passes through the low-impedance fourth magneto-resistance effect element 101f and passes through the second port. 109b.

  FIG. 22 is a graph showing the relationship between the frequency of a high-frequency signal input to the magnetoresistive device 1000 and the amount of attenuation. In FIG. 22, the vertical axis represents the attenuation, and the horizontal axis represents the frequency. The plot line 1020 in FIG. 22 indicates that the magnetic field applied to the two second magnetoresistance effect elements 101c and 101d, the first magnetoresistance effect element 101a, and the fourth magnetoresistance effect element 101f is constant and the applied magnetic field is constant. 7 is a graph when the applied DC current is constant. fc is the spin torque resonance frequency of the second magnetoresistance effect element 101c, fd is the spin torque resonance frequency of the second magnetoresistance effect element 101d, and fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a. And ff is the spin torque resonance frequency of the fourth magnetoresistance effect element 101f.

  As shown by a plot line 1020 in FIG. 22, the band near the spin torque resonance frequency of the second magnetoresistance effect element 101c and the band near the spin torque resonance frequency of the second magnetoresistance effect element 101d are the passbands. Becomes Further, the first magnetoresistance effect element 101a allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the higher frequency side (higher than the above passband). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side of the passband formed near the spin torque resonance frequency of the resistance effect element 101c and near the spin torque resonance frequency of the second magnetoresistance effect element 101d can be made steep. In addition, the fourth magnetoresistance effect element 101f allows the spin torque resonance frequency of the second magnetoresistance effect element 101c and the spin torque resonance frequency of the second magnetoresistance effect element 101d to be on the lower frequency side (lower than the above cutoff band). (Frequency side), the high-frequency signal can be cut off to the second port 109b. In the vicinity of the spin torque resonance frequency of the fourth magnetoresistive element 101f where the high-frequency signal is cut off, the ratio of the attenuation of the high-frequency signal to the attenuation of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the passband formed near the spin torque resonance frequency of the resistance element 101c and near the spin torque resonance frequency of the second magnetoresistance element 101d can be made steep. That is, the magnetoresistive device 1000 functions as a bandpass filter having a steep shoulder characteristic on both the low frequency side and the high frequency side of the passband, as shown by the plot line 1020 in FIG. In this case, near the spin torque resonance frequency of the first magnetoresistive element 101a and near the spin torque resonance frequency of the fourth magnetoresistive element 101f, the change of the amount of attenuation of the high-frequency signal with respect to the frequency is sharp. Therefore, the spin torque resonance frequency of the first magnetoresistive element 101a is made to match the upper limit frequency of the pass band to be used, and the spin torque resonance frequency of the fourth magnetoresistive element 101f is set to the lower limit frequency of the pass band to be used. Preferably.

  Further, in the magnetoresistance effect device 1000, the number of the second magnetoresistance effect element may be one (one of the second magnetoresistance effect elements 101c and 101d).

  As described above, the magnetoresistance effect device 1000 further includes the fourth magnetoresistance effect element 101f with respect to the magnetoresistance effect device 800, and includes the first port 109a, the fourth magnetoresistance effect element 101f, and the second The port 109b is connected in series via the signal line 107 in this order. The fourth magnetoresistive element 101f includes a layer 102, a magnetization free layer 104, and a spacer layer 103 disposed therebetween. Connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 so that the end side is on the side of the reference potential terminal 114 The first magnetoresistive element 101a, the second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element 101f have respective directions from one end to the other end, and respective magnetization free layers. The relationship between the direction from 104 to the magnetization fixed layer 102 is the same for the first magnetoresistive element 101a, the two second magnetoresistive elements 101c and 101d, and the fourth magnetoresistive element 101f. Is formed. The fourth magnetoresistance effect element 101f is configured such that a DC current input from a DC current input terminal 110 (DC application terminal) flows through the magnetization fixed layer 102 to the magnetization free layer 104 in the fourth magnetoresistance effect element 101f. , The spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the The spin torque resonance frequency is lower than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the spin torque resonance frequency of the first magnetoresistance effect element 101a is lower than that of the second magnetoresistance effect element 101d. The spin torque resonance frequency of the fourth magnetoresistance effect element 101f is higher than the spin torque resonance frequency, It is lower than the spin torque resonance frequency of the 101d.

  Therefore, when a high-frequency signal is input to the fourth magnetoresistive element 101f from the first port 109a via the signal line 107, spin torque resonance can be induced in the fourth magnetoresistive element 101f. . At the same time as the spin torque resonance, a DC current flows from the magnetization fixed layer 102 to the magnetization free layer 104 in the fourth magnetoresistance effect element 101f, so that the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is increased. The element impedance of the fourth magnetoresistive element 101f for the same frequency as that of the first element increases.

  The first port 109a, the fourth magnetoresistive element 101f, and the second port 109b are connected in series in this order, so that a high frequency signal can be transmitted to the resonance frequency when the fourth magnetoresistive element 101f is in a high impedance state. In this case, the second port 109b can be cut off, and can be passed to the second port 109b side at a non-resonant frequency where the fourth magnetoresistance effect element 101f is in a low impedance state.

  The spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101c, and the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is the second magnetoresistance effect. Since the spin torque resonance frequency of the effect element 101c is lower than the spin torque resonance frequency, the high-frequency signal can be cut off to the second port 109b on the high frequency side and the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101c. it can. Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a is higher than the spin torque resonance frequency of the second magnetoresistance effect element 101d, and the spin torque resonance frequency of the fourth magnetoresistance effect element 101f is the second. Since the spin torque resonance frequency of the magnetoresistive element 101d is lower than the spin torque resonance frequency, the high frequency signal is cut off to the second port 109b on the high frequency side and the low frequency side of the spin torque resonance frequency of the second magnetoresistance effect element 101d. be able to. In the vicinity of the spin torque resonance frequency of the first magnetoresistive element 101a where the high frequency signal is cut off and in the vicinity of the spin torque resonance frequency of the fourth magnetoresistive element 101f, the attenuation with respect to the attenuation of the high frequency signal in the pass band. Since the ratio of the amounts can be further increased, the pass band formed near the spin torque resonance frequency of the second magneto-resistance effect element 101c or near the spin torque resonance frequency of the second magneto-resistance effect element 101d is reduced. The shoulder characteristics on the high frequency side and the low frequency side can be made steep. That is, the magnetoresistive effect device 1000 can function as a bandpass filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the passband.

  Furthermore, since the magnetoresistive device 1000 has two second magnetoresistive devices 101c and 101d having different spin torque resonance frequencies, it has a wide pass band, and the spin torque resonance of the first magnetoresistive device 101a. The frequency is higher than the spin torque resonance frequency of each of the two second magnetoresistance elements 101c and 101d, and the spin torque resonance frequency of the fourth magnetoresistance element 101f is two. Since it is lower than the spin torque resonance frequency of each of 101c and 101d, it becomes possible to function as a band-pass filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the pass band.

  Further, in the above description, an example has been described in which the two second magnetoresistance elements 101c and 101d are connected in series with each other. The number of magnetoresistive elements may be three or more. Further, a plurality of second magnetoresistive elements may be connected in parallel with each other. Even in the magnetoresistive device in these cases, each of the second magnetoresistive elements is connected to the signal line 107 in parallel with the second port 109b, so that the device is similar to the magnetoresistive device 1000. Can have a frequency characteristic as a high-frequency filter.

  Further, in the above description, an example was described in which the first magnetoresistive element 101a and the fourth magnetoresistive element 101f were connected in series with each other, but the same as in the case described in the fifth embodiment. Thus, the first magnetoresistive element 101a and the fourth magnetoresistive element 101f may be connected in parallel with each other. Even in the magnetoresistive device in this case, the first port 109a, the first magnetoresistive element 101a, and the second port 109b are connected in series in this order via the signal line 107, and the first port 109a Since the fourth magnetoresistive element 101f and the second port 109b are connected in series in this order via the signal line 107, the fourth magnetoresistive effect element 101f and the second port 109b have the same frequency characteristics as a high-frequency filter similar to the magnetoresistive effect device 1000. it can.

  In the above description, the two second magnetoresistive elements 101c and 101d are connected in parallel with the second port 109b between the fourth magnetoresistive element 101f and the second port 109b. Although the DC current input terminal 110 is connected to the signal line 107 and the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a, the fifth embodiment has been described. Similarly to the case described in the embodiment, the second magneto-resistance effect elements 101c and 101d are connected in parallel with the second port 109b between the first magneto-resistance effect element 101a and the first port 109a. And the DC current input terminal 110 may be connected to the signal line 107 between the fourth magnetoresistive element 101f and the second port 109b. More specifically, the magnetization free layer 104 side of the second magnetoresistance effect element 101c is connected to a signal line 107 between the first magnetoresistance effect element 101a and the first port 109a, and the second magnetoresistance element The magnetization fixed layer 102 side of the effect element 101d may be connected to the reference potential terminal 114 and connected to the ground 108 via the reference potential terminal 114.

  In the same manner as in the seventh embodiment, the inductor 113 is connected in parallel with the second port 109b to the first magnetoresistive element 101a in the magnetoresistive device 1000 of the tenth embodiment. Line 107 between the first port 109a and the first port 109a (the signal line 107 between the first magnetoresistance effect element 101a and the fourth magnetoresistance effect element 101f and the first port 109a, or the first magnetic field One of the signal lines 107 between the resistance effect element 101a and the fourth magnetoresistance effect element 101f and the second port 109b), and the DC current input terminal 110 is connected to the fourth magnetoresistance effect element 101f and the fourth Signal line 107 between the second port 109b (between the first and fourth magnetoresistive elements 101a and 101f and the first port 109a). Signal line 107 or the other of the signal line 107 between the first and fourth magnetoresistive elements 101a and 101f and the second port 109b) and two second magnetoresistive effects. Elements 101c and 101d are connected in parallel with second port 109b to signal line 107 of inductor 113 across at least one of first and fourth magnetoresistive elements 101a and 101f. The connection may be made to the signal line 107 on the opposite side of the location.

  In the magnetoresistive device 1000 according to the tenth embodiment, in order to further increase the passband and sharpen the shoulder characteristics, the first magnetoresistive element 101a and the fourth magnetoresistive device having the steep shoulder characteristics are provided. It is preferable that the Q value of each of the effect elements 101f is larger than the Q value of at least one of the second magnetoresistance effect element 101c and the second magnetoresistance effect element 101d that form the pass band.

  As described above, the preferred embodiments of the present invention have been described. However, other than the above-described embodiments, changes and additions of components can be made. For example, in order to prevent a DC signal from flowing through a high-frequency circuit connected to the first port 109a, the first, third, fourth, fifth, sixth, eighth, ninth, and tenth embodiments may be used. A capacitor for cutting a DC signal may be connected in series to the signal line 107 between the connection between the DC current input terminal 110 and the signal line 107 and the first port 109a. Similarly, a capacitor for cutting off a DC signal is connected in series to the signal line 107 between the connection between the inductor 113 and the signal line 107 in the second and seventh embodiments and the first port 109a. You may. In order to prevent a DC signal from flowing to the high-frequency circuit connected to the second port 109b, the first, third, fourth, fifth, sixth, eighth, ninth, and ninth embodiments are used. A capacitor for cutting off a DC signal may be connected in series to the signal line 107 between the connection between the second magnetoresistive element 101c and the signal line 107 and the second port 109b. Similarly, a capacitor for cutting a DC signal is connected in series to the signal line 107 between the connection between the DC current input terminal 110 and the signal line 107 and the second port 109b in the second and seventh embodiments. May be connected.

  In the second and seventh embodiments, the inductor 113 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a and the reference potential terminal 115 (ground 108). One end of the second magnetoresistance effect element 101c is connected to the signal line 107 between the first magnetoresistance effect element 101a and the second port 109b, and the other end of the second magnetoresistance effect element 101c is connected to the reference potential. In the example described above, the DC input terminal 111 is connected to the signal line 107 between the first magnetoresistive element 101a and the second port 109b, and the inductor 113 is connected to the terminal 114 (ground 108). A signal line 107 between the first magnetoresistive element 101a and the second port 109b and a reference potential terminal 115 (ground 108), One end of the second magnetoresistive element 101c is connected to a signal line 107 between the first magnetoresistive element 101a and the first port 109a, and the other end of the second magnetoresistive element 101b is connected to a reference potential terminal. 114 (ground 108), and the DC input terminal 111 may be connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a.

  In the second and seventh embodiments, the example using the inductor 113 has been described. However, a resistor may be used instead of the inductor 113. In this case, the resistance element is connected between the signal line 107 and the reference potential terminal 115 (ground 108), and has a function of cutting a high frequency component of the current by a resistance component. This resistance element may be either a chip resistance or a resistance by a pattern line. It is preferable that the resistance value of the resistance element be equal to or more than the characteristic impedance of the signal line 107. For example, when the characteristic impedance of the signal line 107 is 50Ω, the high frequency power of 45% is cut by the resistance element when the resistance value of the resistance element is 50Ω, and the high frequency power is 90% when the resistance value of the resistance element is 500Ω. Can be cut by the resistance element. With this resistance element, the first magnetoresistance effect elements 101a, 101b, the signal line 107, the resistance element, and the ground 108 are not deteriorated without deteriorating the characteristics of the high-frequency signal passing through the two first magnetoresistance effect elements 101a, 101b. The DC current applied from the DC current input terminal 110 can flow through the closed circuit including the DC current input terminal 110.

  When a resistance element is used instead of the inductor 113, a DC signal is cut on the signal line 107 between the connection of the resistance element (or the DC current input terminal 11) to the signal line 107 and the first port 109a. Signals are connected in series, and the DC signal is cut to the signal line 107 between the connection of the DC current input terminal 110 (or the resistance element) to the signal line 107 and the second port 109b. A series connection of a capacitor for connecting a DC current input terminal 110 to a closed circuit including two first magnetoresistive elements 101a and 101b, a signal line 107, a resistance element, a ground 108, and a DC current input terminal 110. This is preferable in that the direct current applied from can efficiently flow.

  Also, in the first to tenth embodiments, the directions of the high-frequency signals flowing through the respective magneto-resistance effect elements with respect to the respective magneto-resistance effect elements are illustrated in the description of the first to tenth embodiments. Each magnetoresistive element may be formed (arranged) so as to be opposite to the direction. For example, in the first, third, fourth, fifth, sixth, eighth, ninth, and tenth embodiments, in each of the magnetoresistive elements, the magnetization free layer 104 side is connected to the first port 109a side. However, in each magnetoresistive element, the magnetization fixed layer 102 side may be connected to the first port 109a side. In these cases, the direction of the DC current input from the DC current source 112 to the DC current input terminal 110 may be opposite to the direction illustrated in the description of each embodiment.

  In the first to tenth embodiments, the first magnetoresistance effect element 101a (101b), the second magnetoresistance effect element 101c (101d), the third magnetoresistance effect element 101e, and the fourth magnetoresistance element The effect element 101f has a DC current input terminal 110 and a reference potential terminal such that each magnetization free layer 104 side is a DC current input terminal 110 side and each magnetization fixed layer 102 side is a reference potential terminal 114 (115) side. 114 (115), the first magnetoresistance effect element 101a (101b), the second magnetoresistance effect element 101c (101d), the third magnetoresistance effect element 101e, and the fourth magnetoresistance effect. In the element 101f, each magnetization fixed layer 102 side is the DC current input terminal 110 side, and each magnetization free layer 104 side is the reference potential terminal. 14 (115) so that the side, may also be connected to the direct current input terminal 110 and the reference potential terminal 114 (115).

  In the first to tenth embodiments, a DC current from a DC current source 112 is input from a DC current input terminal 110 which is an example of a DC application terminal, and each of the magnetoresistive elements (first to fourth As described above, the DC voltage source is connected to the DC application terminal in place of the DC current source 112, and the DC voltage is applied from the DC application terminal to each of the magnetoresistive elements (first to first). 4 may be applied in the respective laminating directions so that a direct current flows through each magnetoresistive element. That is, the DC application terminal only needs to be able to apply a DC current or a DC voltage to each of the magnetoresistive elements (first to fourth magnetoresistive elements). The DC voltage source may be a DC voltage source that can generate a constant DC voltage, or a DC voltage source that can change the magnitude of the generated DC voltage value.

In the first to tenth embodiments, the magnetoresistive device 100 (200, 300, 400, 500, 600, 700, 800, 900, 1000) uses a magnetic field applying mechanism as a frequency setting mechanism (effective magnetic field setting mechanism). Although the example having 111 has been described, the frequency setting mechanism (effective magnetic field setting mechanism) may be another example as described below. For example, by applying an electric field to the magnetoresistance effect element and changing the electric field, the effective magnetic field in the magnetization free layer is changed by changing the anisotropic magnetic field H _k in the magnetization free layer, and the spin of the magnetoresistance effect element is changed. The torque resonance frequency can be changed. In this case, a mechanism for applying an electric field to the magnetoresistive element is a frequency setting mechanism (effective magnetic field setting mechanism). Further, a piezoelectric body is provided in the vicinity of the magnetization free layer, and an electric field is applied to the piezoelectric body to deform the piezoelectric body, thereby distorting the magnetization free layer, thereby changing the anisotropic magnetic field H _k in the magnetization free layer. Thus, the effective magnetic field in the magnetization free layer can be changed to change the spin torque resonance frequency of the magnetoresistive element. In this case, the mechanism for applying an electric field to the piezoelectric body and the piezoelectric body serve as a frequency setting mechanism (effective magnetic field setting mechanism). Further, a control film made of an antiferromagnetic material or a ferrimagnetic material having an electromagnetic effect is provided so as to be magnetically coupled to the magnetization free layer, and a magnetic field and an electric field are applied to the control film, and a magnetic field applied to the control film and By changing at least one of the electric fields, the exchange coupling magnetic field H _EX in the magnetization free layer is changed to change the effective magnetic field in the magnetization free layer, thereby changing the spin torque resonance frequency of the magnetoresistive element. In this case, the mechanism for applying a magnetic field to the control film, the mechanism for applying an electric field to the control film, and the control film serve as a frequency setting mechanism (effective magnetic field setting mechanism).

  Even if there is no frequency setting mechanism (even if the magnetic field is not applied from the magnetic field applying mechanism 111), if the spin torque resonance frequency of each magnetoresistive element is a desired frequency, the frequency setting mechanism (magnetic field The application mechanism 111) may not be provided.

101a, 101b First magnetoresistance effect element 101c, 101d Second magnetoresistance effect element 101e Third magnetoresistance effect element 101f Fourth magnetoresistance effect element 102 Fixed magnetization layer 103 Spacer layer 104 Free magnetization layer 105 Upper electrode 106 Lower electrode 107 Signal line 108 Ground 109a First port 109b Second port 110 DC current input terminal 111 Magnetic field applying mechanism 112 DC current source 113 Inductor 114, 115 Reference potential terminal 100, 200, 300, 400, 500, 600 , 700, 800, 900, 1000 magnetoresistive device

Claims (14)

A first magnetoresistive element, a second magnetoresistive element, a first port to which a high-frequency signal is input, a second port to which a high-frequency signal is output, a signal line, and a DC application terminal. Has,
The first port, the first magnetoresistive element, and the second port are connected in series in this order via the signal line;
The second magnetoresistive element is connected to the signal line in parallel with the second port,
The first magnetoresistive element and the second magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The first magnetoresistive element and the second magnetoresistive element are direct currents input from the direct current application terminal and flowing through the first magnetoresistive element and the second magnetoresistive element, respectively. The relationship between the direction of the current and the arrangement order of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the same in the first magnetoresistive element and the second magnetoresistive element. Formed as
A spin torque resonance frequency of the first magnetoresistance effect element and a spin torque resonance frequency of the second magnetoresistance effect element are different from each other. A plurality of first magnetoresistive elements having different spin torque resonance frequencies,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements, or the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements is higher. 2. The device according to claim 1, wherein the device is lower than a torque resonance frequency. A plurality of second magnetoresistive elements having different spin torque resonance frequencies,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements, or the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements is higher. 2. The device according to claim 1, wherein the device is lower than a torque resonance frequency. A third magnetoresistive element,
The third magnetoresistive element is connected to the signal line in parallel with the second port;
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween.
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element are input from the DC application terminal, and the first magnetoresistive element, the second magnetoresistive element, The relationship between the direction of the DC current flowing through each of the effect element and the third magnetoresistive element and the arrangement order of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the first. The magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element are formed to be the same,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of the first magnetoresistance effect element, and the spin torque resonance frequency of the third magnetoresistance effect element is higher than the first torque resistance frequency of the first magnetoresistance effect element. The magnetoresistance effect device according to claim 1, wherein the spin torque resonance frequency of the magnetoresistance effect element is lower than the spin torque resonance frequency. A third magnetoresistive element,
The third magnetoresistive element is connected to the signal line in parallel with the second port;
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween.
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element are input from the DC application terminal, and the first magnetoresistive element, the second magnetoresistive element, The relationship between the direction of the DC current flowing through each of the effect element and the third magnetoresistive element and the arrangement order of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the first. The magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element are formed to be the same,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements, and the spin torque resonance frequency of the third magnetoresistance effect element is 3. The magnetoresistive device according to claim 2, wherein the spin torque resonance frequency of each of the plurality of first magnetoresistive elements is lower. A fourth magnetoresistive element,
The first port, the fourth magnetoresistive element, and the second port are connected in series in this order via the signal line;
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element each include a fixed magnetization layer, a free magnetization layer, and a spacer layer disposed therebetween.
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element are input from the DC application terminal, and the first magnetoresistive element, the second magnetoresistive element, The relationship between the direction of the direct current flowing in each of the effect element and the fourth magnetoresistive element and the arrangement order of each of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the first. The magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element are formed to be the same,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of the second magnetoresistance effect element, and the spin torque resonance frequency of the fourth magnetoresistance effect element is higher than the second torque resistance frequency of the second magnetoresistance effect element. The magnetoresistance effect device according to claim 1, wherein the spin torque resonance frequency of the magnetoresistance effect element is lower than the spin torque resonance frequency. A fourth magnetoresistive element,
The first port, the fourth magnetoresistive element, and the second port are connected in series in this order via the signal line;
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element each include a fixed magnetization layer, a free magnetization layer, and a spacer layer disposed therebetween.
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element are input from the DC application terminal, and the first magnetoresistive element, the second magnetoresistive element, The relationship between the direction of the direct current flowing in each of the effect element and the fourth magnetoresistive element and the arrangement order of each of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the first. The magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element are formed to be the same,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements, and the spin torque resonance frequency of the fourth magnetoresistance effect element is 4. The magnetoresistive device according to claim 3, wherein the spin torque resonance frequency of each of the plurality of second magnetoresistive elements is lower. A first magnetoresistive element, a second magnetoresistive element, a first port to which a high-frequency signal is input, a second port to which a high-frequency signal is output, a signal line, and a magnetoresistive element A DC application terminal capable of applying a DC current or a DC voltage to the
The first port, the first magnetoresistive element, and the second port are connected in series in this order via the signal line;
The second magnetoresistive element is connected to the signal line in parallel with the second port,
The first magnetoresistive element and the second magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The first and second magnetoresistive elements are arranged such that one end thereof is on the DC application terminal side and the other end is on the reference potential terminal side. And the reference potential terminal,
The first magnetoresistive element and the second magnetoresistive element each have a direction from the one end to the other end and a direction from the magnetization free layer to the magnetization fixed layer. The relationship is formed so that the relationship is the same between the first magnetoresistive element and the second magnetoresistive element,
A spin torque resonance frequency of the first magnetoresistance effect element and a spin torque resonance frequency of the second magnetoresistance effect element are different from each other. A plurality of first magnetoresistive elements having different spin torque resonance frequencies,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements, or the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements is higher. 9. The device according to claim 8, wherein the device is lower than a torque resonance frequency. A plurality of second magnetoresistive elements having different spin torque resonance frequencies,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements, or the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements is higher. 9. The device according to claim 8, wherein the device is lower than a torque resonance frequency. A third magnetoresistive element,
The third magnetoresistive element is connected to the signal line in parallel with the second port;
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween.
The third magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal such that one end thereof is the DC application terminal side and the other end is the reference potential terminal side,
The first magnetoresistance effect element, the second magnetoresistance effect element, and the third magnetoresistance effect element each have a direction from the one end side to the other end side and a direction from each of the magnetization free layers. The first magnetoresistance effect element, the second magnetoresistance effect element, and the third magnetoresistance effect element are formed to have the same relationship with the direction to the magnetization fixed layer,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of the first magnetoresistance effect element, and the spin torque resonance frequency of the third magnetoresistance effect element is higher than the first torque resistance frequency of the first magnetoresistance effect element. 9. The magnetoresistance effect device according to claim 8, wherein the spin torque resonance frequency of the magnetoresistance effect element is lower than the spin torque resonance frequency. A third magnetoresistive element,
The third magnetoresistive element is connected to the signal line in parallel with the second port;
The first magnetoresistive element, the second magnetoresistive element, and the third magnetoresistive element each include a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween.
The third magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal such that one end thereof is the DC application terminal side and the other end is the reference potential terminal side,
The first magnetoresistance effect element, the second magnetoresistance effect element, and the third magnetoresistance effect element each have a direction from the one end side to the other end side and a direction from each of the magnetization free layers. The first magnetoresistance effect element, the second magnetoresistance effect element, and the third magnetoresistance effect element are formed to have the same relationship with the direction to the magnetization fixed layer,
The spin torque resonance frequency of the second magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistance effect elements, and the spin torque resonance frequency of the third magnetoresistance effect element is 10. The magnetoresistive device according to claim 9, wherein the spin torque resonance frequency of each of the plurality of first magnetoresistive elements is lower. A fourth magnetoresistive element,
The first port, the fourth magnetoresistive element, and the second port are connected in series in this order via the signal line;
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element each include a fixed magnetization layer, a free magnetization layer, and a spacer layer disposed therebetween.
The fourth magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal such that one end thereof is the DC application terminal side and the other end is the reference potential terminal side,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the fourth magnetoresistive effect element each have a direction from the one end side to the other end side and a direction from each of the magnetization free layers. The first magnetoresistance effect element, the second magnetoresistance effect element, and the fourth magnetoresistance effect element are formed to have the same relationship with the direction to the magnetization fixed layer,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of the second magnetoresistance effect element, and the spin torque resonance frequency of the fourth magnetoresistance effect element is higher than the second torque resistance frequency of the second magnetoresistance effect element. 9. The magnetoresistance effect device according to claim 8, wherein the spin torque resonance frequency of the magnetoresistance effect element is lower than the spin torque resonance frequency. A fourth magnetoresistive element,
The first port, the fourth magnetoresistive element, and the second port are connected in series in this order via the signal line;
The first magnetoresistive element, the second magnetoresistive element, and the fourth magnetoresistive element each include a fixed magnetization layer, a free magnetization layer, and a spacer layer disposed therebetween.
The fourth magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal such that one end thereof is the DC application terminal side and the other end is the reference potential terminal side,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the fourth magnetoresistive effect element each have a direction from the one end side to the other end side and a direction from each of the magnetization free layers. The first magnetoresistance effect element, the second magnetoresistance effect element, and the fourth magnetoresistance effect element are formed to have the same relationship with the direction to the magnetization fixed layer,
The spin torque resonance frequency of the first magnetoresistance effect element is higher than the spin torque resonance frequency of each of the plurality of second magnetoresistance effect elements, and the spin torque resonance frequency of the fourth magnetoresistance effect element is 11. The magnetoresistive device according to claim 10, wherein the spin torque resonance frequency of each of the plurality of second magnetoresistive elements is lower.

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