JP6596410B2 - Chip scale package light emitting device and manufacturing method thereof - Google Patents

Description

Citation reference of related applications

  This application claims benefit and priority over Taiwan Patent Application No. 104144441 filed on December 30, 2015, and Chinese Patent Application No. 201610009956.7 filed on January 7, 2016 claiming priority of the Taiwan Patent Application. The entire disclosures of both applications are incorporated herein by reference.

background

TECHNICAL FIELD The present disclosure relates to a light emitting device and a method for manufacturing the same, and more particularly to a chip scale package light emitting diode (LED) device including a flip chip type LED semiconductor die that generates optical radiation during operation.
Explanation of related technology

  LEDs are widely used in various application fields including signal lamps, backlight devices, general lighting fixtures, portable devices, and automotive lighting. Generally, an LED semiconductor die is disposed in a package structure such as a lead frame to form a package LED element. Further, a white light emitting diode element that has been converted into a phosphor may be formed by coating a photoluminescent material such as a phosphor.

  The development of chip scale package (CSP) LED devices is gaining more and more attention due to its promising advantages. As a typical example, a white CSP type LED element usually consists of a photoluminescent structure covering a blue LED semiconductor die and a compact chip scale size LED semiconductor die. A blue LED semiconductor die is generally a flip-chip LED die that emits blue light simultaneously from the top surface and four edge surfaces. The photoluminescent structure is arranged to cover the LED semiconductor die and downconverts the wavelength of the blue light emitted from the top surface as well as the four edge surfaces. Upon passing through the photoluminescent structure, part of the blue light is converted into light of higher wavelength (low energy), after which the light with this different wavelength spectrum is mixed in a predetermined ratio to obtain the desired color temperature Of white light is generated. To achieve the goal of uniformly converting blue light, the photoluminescent material has the same thickness and the same distribution density on the top and four edges of the photoluminescent structure, i.e., photo It is desirable to form a shape-adaptive coating of the luminescent structure.

  Compared to plastic chip carrier (PLCC) LED elements with leads, CSP light emitting elements have the following advantages. That is, (1) material cost is considerably low because a bond wire and a lead frame are unnecessary. (2) Thermal resistance between the LED semiconductor die and the mounting substrate, which is usually a printed circuit board (PCB), is further reduced without using a lead frame. Therefore, even if the drive current is the same, the LED operating temperature decreases. In other words, even if the electric energy consumption of the CSP type LED element is small, more light output can be obtained. (3) Since the operating temperature is low, the LED semiconductor quantum efficiency of the CSP type LED element becomes higher. (4) Since the shape factor of the light source is much smaller, the degree of design freedom of the LED device at the module level becomes higher. (5) Since the light emitting area of the CSP type LED element is small and close to a point light source, it is easy to design a secondary optical device. Since the CSP type LED element is compact, it can be designed to emit light with a low etendue at high illuminance for projection lighting such as automobile headlights.

  Although the CSP type LED device has many advantages, the adhesive strength between the photoluminescence structure and the LED semiconductor die is relatively weak compared to the PLCC type LED device. In the case of CSP type LED elements, it is possible to omit the lead frame or submount, so that the surface contact with the lead frame or submount is added mainly by the photoluminescence structure or by itself. Without surface contact with the LED semiconductor die. Thus, the contact area of the photoluminescent structure is reduced relatively only to the surface of the LED semiconductor die without adding contact to the submount region. Decreasing the adhesion area typically reduces the adhesion between the photoluminescent structure and the LED semiconductor die. In addition, the coefficient of thermal expansion (CTE) of photoluminescent structure material (generally composed of organic resin material) is generally LED semiconductor mold material (generally composed of inorganic material) Much larger than). During operation of a CSP type LED device, significant stresses in the CTE during thermal cycling can cause internal stresses at the interface between these two materials. Since the photoluminescence structure has a weak adhesive force to the LED semiconductor die, delamination is likely to occur and the photoluminescence structure peels off from the LED semiconductor die. Delamination of photoluminescent structures is one of the major CSP failure mechanisms during operation of CSP type LED devices. This disadvantage adversely affects the reliability of the CSP type LED element, and puts a practical limit on the use of the CSP type LED.

  Another problem with CSP-type LED elements is poor color uniformity. Two main mechanisms are involved in the poor color uniformity. That is: 1. the mechanical dimensions of the photoluminescent structures are not matched; The distribution of phosphor particles from one device to another in the photoluminescence structure cannot be controlled. In the relative manufacturing process for manufacturing CSP type LED elements, phosphor particles are first mixed with a binder resin material to produce a phosphor suspension, and then the phosphor suspension is formed and screen printed. The photoluminescent structure is formed by being disposed on the LED semiconductor die by a method including spraying. When forming a photoluminescent structure using a phosphor suspension, the geometric dimensions of the photoluminescent structure must be accurately set to achieve the desired correlated color temperature (CCT) in a CSP-type LED device. It will be appreciated that adjustment is desirable. However, it is very difficult to always accurately adjust the size of each photoluminescence structure in the mass production process. Even if the geometric dimensions of each photoluminescent structure can be precisely adjusted during mass production, there is no mechanism to control the particle distribution of the phosphor material within the photoluminescent structure. In fact, control of the distribution of the phosphor material is one of the most important factors in determining optical characteristics such as CCT of CSP type LED elements. Therefore, it is highly desirable to achieve a shape-adaptive coating of phosphor fine particles on the top surface and four edge surfaces of the LED semiconductor die to form a photoluminescent structure, thereby enabling mass production manufacturing processes. Stable optical conversion of CSP type LED elements can be realized.

  Specifically, since there are several manufacturing steps in the mass production process, the color uniformity of the CSP type LED element may be deteriorated, resulting in a decrease in production yield. For example, when a photoluminescence structure of a CSP type LED element is formed through a molding (or screen printing) process, a plurality of LED semiconductor dies are arranged as a previous step, and an array is formed on the inner surface of the mold (or stencil). Form. However, if the arrangement forming the array of LRF semiconductor dies is inaccurate, the thickness on the top and edge surfaces of the photoluminescent structure will be uneven. Further, after the array of photoluminescent structures is formed, the array of CSP type LED elements is usually separated using a subsequent individual separation process. If the position control of the dicing saw is incomplete, the thickness of the edge surface of the photoluminescence structure may vary from one CSP type LED element to another. In addition, if the particle distribution of the phosphor material in the phosphor suspension cannot be adjusted, color uniformity is hindered. As a result, the light passing through the non-uniform LED element photoluminescence structure has poor color uniformity. Even in individual CSP type LED elements, it is not uncommon for the spatial uniformity of color to be disturbed depending on the viewing direction due to the variation in the fluorescence conversion distance of the photoluminescence structure that blue light receives. If the color uniformity is poor, the yield during mass production decreases.

  Another manufacturing process for forming a photoluminescent structure comprising a phosphor layer with a shape-adaptive coating is a spray coating method. If the spray method is used, the problems caused by the incorrect placement of the LED semiconductor die may be reduced compared to the case of using a molding method or a screen printing method. However, manufacturing photoluminescent structures using the spray method creates other problems. A problem has been found that it becomes difficult to hold the phosphor particles adjacent to the vertical edge surface of the LED semiconductor die because the phosphor particles settle out due to the influence of gravity during manufacturing. This gravitational effect makes it difficult to form a substantially continuous phosphor material layer on the edge surface of the LED semiconductor die. Although it is possible to form a transparent continuous layer on the edge surface of the LED semiconductor die, the fluorescent particle layer in the resin material becomes locally discontinuous. In other words, photoluminescent structures produced by spraying process form fairly large and optically transparent “cavity” structures. Blue light emitted from the LED semiconductor die leaks more from the cavity and is directly transmitted without undergoing much wavelength conversion by the phosphor material. It will be appreciated that in the cavities typically found at the four vertical edges, blue light will leak more than the edges of the CSP LED elements. Therefore, a blue ring is generated in the CSP type LED device manufactured by using the spraying method. In other words, it is generally not possible to achieve a photoluminescent structure with a desired phosphor powder shape-adaptive coating using the spray method. Furthermore, when a thin photoluminescent structure is formed using a spray method, the upper portion of the photoluminescent structure located immediately above the LED semiconductor die tends to have a particle aggregation effect. The aggregation of the distribution of the phosphor powder generates a considerably large cavity made of an optically transparent resin material in which the phosphor material is hardly mixed. This aggregation effect of the phosphor material is the main reason why phosphor converted LEDs have an undesirable “blue light spot”. Blue light leaking from a fairly large and substantially transparent cavity can produce light with a locally intense blue brightness, resulting in poor spatial uniformity of color and human eyes. Hazardous blue light hazard arises. Other secondary effects based on the aggregation of the phosphor powder include poor color uniformity, low yield, and low phosphor wavelength conversion efficiency.

  Another problem that occurs when using CSP type LED elements is the reliability of the elements. One of the main technical features of the CSP-type LED element is that it does not have a submount substrate or a lead frame, and is directly exposed from the LED semiconductor die directly under the bonding pad. Since there is no submount substrate, the photoluminescence structure of the CSP type LED element is also exposed from the lower side. When joining a CSP type LED element to a substrate such as a PCB, a reflow soldering method is generally used. During the reflow soldering process, generally the soldering flux is used to improve the adhesion between the CSP type LED element and the substrate. However, the additive contained in the soldering flux tends to react with the benzene structure, and this additive is a substance commonly found in silicone binder materials. However, the photoluminescence structure may be made of a silicone resin material. The chemical reaction can result in an inconvenient dark layer on the underside of the photoluminescent structure. Therefore, the optical effectiveness and reliability of the CSP type LED element can be impaired.

  Therefore, as a mass production solution to address the above-mentioned problems in CSP type LED devices, improve the interfacial adhesion between the LED semiconductor die and the photoluminescent structure, and improve the spatial uniformity of color and CCT binning. There is a need to improve consistency, improve optical effectiveness, and prevent the formation of inconvenient dark layers on the underside of the photoluminescent structure.

Overview

  Some embodiments of the present disclosure provide a CSP type LED device with a small light emitting area, improved reliability, color spatial uniformity, CCT binning consistency, optical effectiveness and low thermal resistance The purpose is to do.

  Another object in some embodiments of the present disclosure is to provide a method of manufacturing the disclosed CSP-type LED device.

  In some embodiments of the present disclosure, to achieve these objectives, a CSP type LED device comprises an LED semiconductor die and a package structure, the package structure comprising a soft buffer layer, a photoluminescence structure and a capsule. It is disclosed that a material structure is included. The LED semiconductor die is a flip chip type LED semiconductor die having an upper surface, a lower surface, an edge surface, and a set of electrodes. An edge surface is formed between the upper surface and the lower surface and extends, and a set of electrodes is placed on the lower surface. The soft buffer layer, in some embodiments, is formed of or includes a polymer resin. The soft buffer layer includes an upper portion formed or placed on the upper surface of the LED semiconductor die and an edge portion formed so as to cover the edge surface of the LED semiconductor die. The upper portion has a convex surface, and the edge portion has an extended surface and is smoothly connected to the convex surface. The photoluminescence structure is formed on the soft buffer layer and covers the convex surface and the extended surface. The photoluminescence structure is made of a resin binder material such as silicone, epoxy, or rubber, and the photoluminescence material is dispersed in the binder material. The encapsulant structure can be made of a polymer material having a hardness not lower than that of the soft buffer layer, and is formed on the photoluminescence structure.

  To achieve the above object, a method of manufacturing a CSP type LED device according to some embodiments includes a plurality of LED semiconductor dies disposed on a release film to form an array of LED semiconductor dies, and a connected package structure. Forming an array of bodies on the array of LED semiconductor dies and individually separating the array of package structures to form a plurality of CSP-type LED elements, the release film before or individually separating the package structures Can be removed after separation.

  The above-described method of forming an array of package structures on an array of LED semiconductor dies further comprises the following steps. That is: An array of soft buffer layers is formed on the array of LED semiconductor dies, and the upper portion of each soft buffer layer that has a convex surface is disposed on the upper surface of each LED semiconductor die, and an extended surface adjacent to the convex surface of each soft buffer layer is provided. 1. The edge portion to be formed is formed so as to cover the edge surface of each LED semiconductor die; An array of photoluminescent structures can be formed on the array of soft buffer layers covering the convex and extended surfaces, and the photoluminescent structure can be formed using a method of sequentially depositing photoluminescent and polymeric materials; 3. An array of encapsulant structures is formed on the array of photoluminescent structures, the encapsulant structures having a hardness that is not less than the hardness of the soft buffer layer.

  Thereby, the improved CSP type LED device according to some embodiments of the present disclosure provides at least the following benefits.

  First, improved CSP-type LED devices according to some embodiments of the present disclosure have improved reliability during operation. When compared with a normal CSP type LED element, the photoluminescence structure is formed to be in direct contact with the LED semiconductor die. It will be appreciated that the photoluminescent structure generally consists of a particulate ceramic phosphor material dispersed in a polymer binder material. However, ceramic materials generally do not chemically bond with the LED semiconductor die during the CSP manufacturing process and therefore have poor adhesion or bonding strength with the LED semiconductor die. The adhesion between the photoluminescent structure and the LED semiconductor die arises mainly from the polymer binder material. If the phosphor powder is dispersed in the polymer binder material, this reduces the contact area between the polymer material and the LED semiconductor die, resulting in a decrease in bonding strength at the interface. In contrast, for CSP type LED devices according to some embodiments of the present disclosure, the soft buffer layer provides sufficient contact between the polymer material and the LED semiconductor die. Thus, the bond strength between the photoluminescent structure and the LED semiconductor die is greatly improved by incorporating a soft buffer layer. Thus, the soft buffer layer functions as an adhesion promoting layer.

  Furthermore, the hardness of the soft buffer layer can be lowered, thereby reducing the internal stress caused by CTE mismatch between components in the CSP type LED element. Thus, the soft buffer layer also functions as a stress relaxation layer.

  Accordingly, by preventing the package structure from peeling from the LED semiconductor die, the operational reliability of the CSP-type LED device according to some embodiments of the present disclosure is greatly improved.

  Second, the extended surface at the edge of the soft buffer layer according to some embodiments of the present disclosure is a relatively smooth surface having a slope with a small slope. Desirably, the slightly sloped extended surface of the edge of the soft buffer layer smoothes the steeper vertical “step” of the edge surface of the LED semiconductor die. Without a smooth, slightly-graded soft buffer layer, the phosphor powder tends to settle in the binder material due to gravity, holding the phosphor powder on the edge of the LED semiconductor die and having a substantially continuous shape It may be difficult to form an adaptive phosphor coating layer. On the other hand, in the case of a soft buffer layer according to some embodiments of the present disclosure, precipitation due to gravity of the phosphor powder can be greatly reduced, so that the phosphor powder is substantially continuous along the edge of the soft buffer layer. Distributed. In other words, some embodiments of the present disclosure provide a substantially shape-adapted coating with phosphor powder within the photoluminescent structure. As a result, the problem of blue light leakage in the CPS type LED element is solved. Thus, CSP type LED devices according to some embodiments of the present disclosure have improved color spatial uniformity and improved CCT binning consistency. Thus, the soft buffer layer functions as a smooth layer that facilitates the formation of a substantially shape-adapted coating with the phosphor powder in the photoluminescent structure.

  Third, according to some embodiments of the CSP type LED device according to the present disclosure, as disclosed in, for example, US Patent Publication No. US2010 / 0119839 (incorporated by reference in its entirety), photoluminescence The layer and the polymer resin layer are desirably formed sequentially and individually in the manufacturing process of the photoluminescence structure. Using this disclosed phosphor deposition method, very compact phosphor layers can be formed. One advantage is that the phosphor particles are deposited as a uniform, thin and compact shape-adaptive coating layer. Thus, no appreciable “cavity” of photoluminescent material is formed. As a result, the “blue light spot” phenomenon and the blue light leakage problem are eliminated, and the danger of blue light to the human eye is reduced. Another advantage is that when a CSP-type LED device according to some embodiments of the present disclosure is formed with a high packing density photoluminescent structure, an improvement in the conversion efficiency of the photoluminescent structure can be seen. The optical effect is improved.

  Fourth, according to some embodiments of the CSP-type LED element of the present disclosure, the manufacturing material forming the soft buffer layer may be a substance that can cause a chemical reaction with an additive contained in the soldering flux (for example, It is desirable to select from polymer materials that do not contain benzene. When adhering a CSP type LED element to a substrate to be used, for example, a PCB, a reflow soldering process is usually used. The soldering flux is generally used during the reflow soldering process to improve the adhesion between the CSP type LED element and the substrate. However, the additives contained in the soldering flux tend to react with benzene, which is a substance used in silicone binder materials. When made of a polymer material containing benzene, an undesirably dark colored layer is formed on the lower surface of the photoluminescent structure by the chemical reaction. However, if the soft buffer layer is made of a polymer material that contains little or no benzene, the photoluminescent structure is isolated from exposure to flux additives during subsequent bonding steps. Therefore, when the CSP type LED element is bonded to the substrate through the reflow soldering process, the additive contained in the soldering flux is substantially confined under the CSP type LED element by the soft buffer layer, and the photoluminescence Reaching the sense structure can be prevented. Thus, the adverse chemical reaction between the soldering flux additive and (for example) benzene found in the silicone binder material used to produce the photoluminescent structure is largely avoided. Therefore, the deep color layer generated by the chemical reaction is greatly reduced, and the optical effectiveness and reliability of the CSP type LED element can be prevented from being lowered. In other words, the soft buffer layer functions as an environmental barrier layer.

  Other aspects and embodiments of the present disclosure are also contemplated. The above summary and the following detailed description are not intended to limit the present disclosure to any particular embodiment, but are merely intended to provide a description of some of the disclosed embodiments. .

and and It is the schematic which shows the cross section of the CSP type | mold LED element by 1st Embodiment which concerns on this indication. and It is the schematic which shows another shape of the expansion surface of the soft buffer layer by other embodiment. It is the schematic which shows the cross section of the CSP type | mold LED element by 2nd Embodiment which concerns on this indication. and and It is the schematic which shows the cross section of the CSP type | mold LED element by 3rd Embodiment which concerns on this indication. and and and and and FIG. 6 is a schematic diagram illustrating a cross-section at each stage of a manufacturing method for producing a CSP type LED device according to some embodiments according to the present disclosure.

Detailed description

Definitions The following definitions apply to some of the technical aspects described with respect to some embodiments of the present disclosure. These definitions could also be further developed in this disclosure.

  In this disclosure, singular terms, whether unspecified or specific, include a plurality of objects unless the context clearly indicates otherwise. Thus, for example, a description relating to one layer may include multiple layers unless expressly stated otherwise.

  As used herein, the term “one set” means a collection of one or more components. Thus, for example, a set of layers may include a single layer or multiple layers. Further, a set of components may mean a plurality of members in the set. The plurality of components in the set may be the same or different from each other. In some examples, a set of components may include one or more common characteristics.

  As used herein, the term “adjacent” means adjacent or adjacent. Adjacent components may be present apart from each other or may actually be in contact with each other, ie directly. In some examples, adjacent components may be coupled together or integrally formed. In the description of some embodiments, a component provided “on” or “on” another component is that the former element is directly above the latter element (eg, physically directly). It may include the case where it is provided directly (in contact) and the case where one or more intervening elements are disposed between the former element and the latter element. In the description of some embodiments, a component provided “under” another component is that the former element is provided directly below the latter element (eg, by direct physical contact). A case where one or a plurality of intervening elements are disposed between the former element and the latter element may be included.

  As used herein, the terms “connect”, “connected” and “connected” refer to operational linkages or associations. The connected components may be directly connected to each other, or indirectly connected to each other, such as by another set of components.

  As used herein, the terms “about”, “substantially” and “substantially” represent a degree or degree to be taken into account. When used in connection with an event or situation, in addition to the case where the event or situation definitely occurs, the event or situation is likely to occur, e.g., resulting in typical tolerances for manufacturing operations described herein. The case of close proximity may be included. For example, when used in connection with a numerical value, it may include a variation range within ± 10% of the numerical value, for example, within ± 5%, within ± 4%, within ± 3%, within ± 2%, It may include a variation range within ± 1%, within ± 0.5%, within ± 0.1%, or within ± 0.05%.

  The term “efficiency” or “quantum efficiency” as used herein in connection with photoluminescence refers to the ratio of the number of output photons to the number of input photons.

  As used herein, the term “size” refers to a characteristic dimension. When the object (for example, particles) is spherical, the size of the object may mean the diameter of the object. When the object is non-spherical, the size of the object may indicate an average value of various orthogonal dimensions of the object. Thus, for example, the size of an ellipsoidal object may refer to the average value of the major and minor axes of the object. When referring to a set of objects having a particular size, it is assumed that the object is distributed in several sizes around that particular size. Accordingly, as used herein, the size of a set of objects may refer to the general size of a size distribution such as an average value, an intermediate value, or a peak value.

  FIG. 1A shows a schematic diagram illustrating a cross-section of a first embodiment of a CSP-type LED device according to the present disclosure. The CSP-type LED element 1A includes an LED semiconductor die 10 and a package structure 200. The package structure 200 includes a soft buffer layer 20, a photoluminescence structure 30, and an encapsulant structure 40.

  The LED semiconductor die 10 is a flip chip type LED semiconductor die having an upper surface 11, a lower surface 12, an edge surface 13 and a set of electrodes 14. The upper surface 11 and the lower surface 12 are formed substantially in parallel and face each other. The edge surface 13 is formed between the upper surface 11 and the lower surface 12 and extends to connect the outer edge 111 of the upper surface 11 to the outer edge of the lower surface 12. In other words, the edge surface 13 is formed along the outer edge 111 of the upper surface 11 and the outer edge of the lower surface 12.

  A set of electrodes 14, ie, a plurality of electrodes, is disposed on the lower surface 12. Electrical energy (not shown) is applied to the LED semiconductor die 10 through a set of electrodes 14, resulting in electroluminescence that is emitted from the top surface 11 and the edge surface 13. No electrode is provided on the top surface 11 of the flip chip type semiconductor die 10 of the illustrated embodiment.

  By providing the soft buffer layer 20, 1) the internal stress resulting from the CTE mismatch between the members of the CSP type LED element 1A is reduced, and 2) the bonding force between the LED semiconductor die 10 and the package structure 200 is increased. 3) to promote the formation of the photoluminescent structure 30 on the soft buffer layer 10 to achieve a substantially shape-adaptive coating. Specifically, the soft buffer layer 20 is preferably made of a relatively soft material made of a transparent polymer material such as silicone, epoxy resin, or rubber. For the convenience of illustration, the soft buffer layer 20 is composed of an upper portion 21 and an edge portion 22 (formed simultaneously in one step). The upper portion 21 is formed on the upper surface 11 of the LED semiconductor die 10, and the edge portion 22 is formed so as to cover the edge surface 13 of the LED semiconductor die 10. Further, the soft buffer layer 20 substantially completely covers the top surface 11 and the edge surface 13 of the LED semiconductor die 10 but does not cover the set of electrodes 14 of the LED semiconductor die 10.

  As shown in FIG. 1B (cross-sectional view of a CSP-type LED element not including the photoluminescence structure 30 and the capsule material structure 40), the upper portion 21 has a convex surface 211 (the upper surface of the upper portion 21). The apex of the convex surface 211 is close to the center point of the upper surface 11 and coincides with the optical axis of the LED semiconductor die 10, and the bottom point of the convex surface 211 is close to the outer edge 111 of the upper surface 11. Since the soft buffer layer 20 is desirably formed from a liquid polymer material by curing, the convex shape is formed by the cohesive force effect of the liquid polymer material. As a result, the upper part 21 exhibits a convex surface 211. The distance from the apex of the convex surface 211 to the upper surface 11 (the distance along the vertical direction shown in FIG. 1B) is preferably shorter than about half of the thickness of the LED semiconductor die 10, and therefore the convex surface 211 is not steep. Subsequent formation of a substantially continuous phosphor layer is facilitated. For example, the distance from the apex of the convex surface 211 to the upper surface 11 may be about 45% or less, about 40% or less, about 30% or less, about 20% or less, or about 15% or less of the thickness of the LED semiconductor die 10.

  The edge 22 has an extended surface 221 (the upper surface of the edge 22) connected to the convex surface 211. Since the extended surface 221 is continuously connected to the convex surface 211, the extended surface 221 and the convex surface 211 both have substantially the same curvature as a whole at the connection boundary. Therefore, when the photoluminescence structure 30 is formed on the soft buffer layer 20, a continuous or smooth connection between the extended surface 221 and the convex surface 211 can be obtained.

  The extended surface 221 and the convex surface 211 may be adjacent to each other in the vicinity of the outer edge 111 of the upper surface 11 of the LED semiconductor die 10, so that the outer edge 111 contacts the extended surface 221 and the convex surface 211 at almost one point, Or adjacent. In other words, the outer edge 111 of the LED semiconductor die 10 and the boundary between the extended surface 221 and the convex surface 211 are substantially parallel to a small deviation or interval, and this deviation depends on the mounting capability of the manufacturing process as much as possible. Small as long as specified.

  The extended surface 221 preferably includes a concave surface as shown in FIG. 1B. In other words, the curvature of the extended surface 221 is opposite to that of the convex surface 211. Furthermore, the extended surface 221 becomes flatter as it moves away from the edge surface 13 of the LED semiconductor die 10, and the curvature finally approaches zero. The extended surface 221 having such a desired profile will facilitate the formation of the photoluminescent structure 30. According to other embodiments, the extended surface 221 may include an angled surface (FIG. 1D) or a convex surface (FIG. 1E).

  The soft buffer layer 20 is preferably formed by spraying a liquid polymer material such as silicone onto the LED semiconductor die 10, and the polymer material adheres to the upper surface 11 and the edge surface 13 of the LED semiconductor die 10. Due to the interaction between the surface tension and cohesive force of the liquid polymer material itself, after the curing step, the soft buffer layer 20 having the upper part 21 and the edge part 22 is formed and formed accordingly.

  Since the soft buffer layer 20 has a relatively low hardness, the internal stress induced by the CTE mismatch between the members of the CSP-type LED element 1A during the thermal cycle of the LED operation due to the greater strain deformation of the soft buffer layer 20 Can be reduced. Therefore, the failure state in which the package structure 200 is delaminated from the LED semiconductor die 10 due to internal stress can be significantly suppressed. That is, the soft buffer layer 20 functions as a stress relaxation layer. If the hardness of the soft buffer layer 20 is too large, the ability to withstand greater deformation of the soft buffer layer 20 decreases. Similarly, the ability to suppress interlayer internal stress in the package structure 200 is also reduced. The hardness of the soft buffer layer 20 desirably does not exceed A80 on the Shore hardness scale, and is, for example, A70 or less, A60 or less, A50 or less, or A40 or less. The hardness of the soft buffer layer 20 is mainly determined by material characteristics. A suitable manufacturing material for the soft buffer layer 20 is selected based on the desired hardness. For example, the material for producing the soft buffer layer 20 includes a substantially transparent polymer material having a desired hardness, and includes silicone, rubber, epoxy resin, and the like.

  By disposing the photoluminescent structure 30 on the soft buffer layer 20, a part of the wavelength emitted from the LED semiconductor die 10 via the soft buffer layer 20 is down-converted. In particular, the photoluminescence structure 30 is adaptively formed on the soft buffer layer 20 along the convex surface 211 and the extended surface 221 of the soft buffer layer 20.

  FIG. 1C is a cross-sectional view of a CSP type LED element 1A that does not have the encapsulant structure 40. FIG. The photoluminescent structure 30 includes an upper portion 31 and an edge 32. The upper portion 31 of the photoluminescent structure 30 is formed on the upper portion 21 of the soft buffer layer 20, and the edge 32 of the photoluminescent structure 30 is formed on the edge 22 of the soft buffer layer 20. Since the convex surface 211 of the upper part 21 is smoothly and continuously connected to the extended surface 221 of the edge part 22, the upper part 31 of the photoluminescence structure 30 is also smoothly connected to the edge part 32 of the photoluminescence structure 30. Connected.

  The extended surface 221 is a relatively smooth surface with a slight slope and can smooth the steep “step” formed by the edge surface 13 of the LED semiconductor die 10. In other words, the soft buffer layer 20 has a gentle stepped outer shape and functions as a gentle layer, thereby facilitating the formation of a coating that substantially conforms to the shape of the subsequent phosphor powder. For example, the angle formed by the extended surface 221 with respect to the horizontal direction shown in FIG. 1C may be in a range of less than 90 degrees, for example, about 85 degrees or less, about 80 degrees or less, or about 75 degrees or less. When the photoluminescence structure 30 is formed by using a coating method such as spraying, the precipitation of the photoluminescence material caused by gravity in the liquid polymer resin material covering the gentle stepped outer shape of the soft buffer layer 20 is greatly reduced. Can be reduced. Accordingly, a substantially continuous photoluminescence material layer is formed to cover the convex surface 211 and the extended surface 221 of the soft buffer layer. Thus, a substantially conformable coating of the photoluminescent material forming the photoluminescent structure 30 is obtained. In other words, the photoluminescent structure 30 may be a thin film structure and substantially matches the shape of the soft buffer layer 20 and substantially matches the shape of the LED semiconductor die 10. Therefore, the problem of blue light leakage in the CPS type LED element is solved.

  The photoluminescence structure 30 includes a photoluminescence material and a resin material used for bonding the photoluminescence material. For example, the binder material can be selected from one of transparent polymer resin materials including silicone, epoxy resin, rubber and the like. As the binder material, the same material as that used for forming the soft buffer layer 20 or a different material can be selected. The method of forming a phosphor layer disclosed in US 2010/0119839 can be applied to form the photoluminescent structure 30 in various embodiments of the present disclosure. The patent is hereby incorporated by reference in its entirety. Using the disclosed phosphor deposition methods, very compact phosphor layers can be formed as photoluminescent structures. One advantage is that the phosphor particles are deposited as a uniform, thin and compact shape-adaptive coating layer. Thus, it does not form a substantially large “cavity” of the photoluminescent material. As a result, the “blue light spot” phenomenon and the blue light leakage problem are eliminated, and the danger of blue light to the human eye is reduced. Another advantage is that when a high packing density photoluminescent structure 30 is formed in the embodiment of the CSP type LED device 1A according to the present disclosure, the conversion efficiency of the photoluminescent structure 30 is improved, and thus the CSP The overall optical effect of the type LED element 1A is also improved. A variety of photoluminescent materials and polymer resin materials with different refractive indices can be deposited layer by layer in the desired deposition order to form photoluminescent structures 30, thereby reducing light extraction efficiency and light. It will be appreciated that the conversion efficiency can be further improved.

  The photoluminescent structure 30 of the illustrated embodiment includes a photoluminescent material and a polymer resin material. Compared to a general CSP type LED element, the photoluminescence structure is formed to be in direct contact with the LED semiconductor die. It will be appreciated that the photoluminescent structure generally consists of a powdered ceramic phosphor material dispersed in a polymer binder. However, ceramic materials generally do not chemically bond with the LED semiconductor die during the CSP manufacturing process, and therefore weaken the adhesion to the LED semiconductor die. The adhesion between the photoluminescent structure and the LED semiconductor die is obtained primarily from the polymer binder material. When the phosphor powder is dispersed in the polymer binder material, the percentage of contact area between the polymer material and the surface of the LED semiconductor die is reduced, resulting in a decrease in bonding strength at the interface. In contrast, the soft buffer layer 20 provides sufficient contact between the polymer material 10 and the LED semiconductor die 10 of the CSP-type LED element 1A according to the present disclosure, and the photoluminescent structure 30 is an LED semiconductor. Compared to the adhesion to the die 10, it has a much greater adhesion to the soft buffer layer 20. Accordingly, the bonding strength between the photoluminescent structure 30 and the LED semiconductor die 10 is greatly improved by the introduction of the soft buffer layer. Thus, the soft buffer layer 20 functions as an adhesion promoting layer.

  As shown in FIG. 1A, the encapsulant structure 40 formed on the photoluminescence structure 30 is disposed as an environmentally friendly protection structure to protect the photoluminescence structure 30. The encapsulant structure 40 may not conform to the shape of the photoluminescent structure 30 and the soft buffer layer 20. Instead, the encapsulant structure 40 can be manufactured as a planarized structure. The plane of the encapsulant structure 40 will facilitate the pick and place operation by the robot arm when the CSP type LED element is bonded to the substrate in the subsequent assembly process.

  The hardness of the capsule material structure 40 is equal to or higher than the hardness of the soft buffer layer 20. It is desirable that the encapsulant structure 40 be stiffer than the soft buffer layer 20, thereby providing greater rigidity and being easier to handle in subsequent assembly steps. In particular, the hardness of the capsule material structure 40 is preferably D30 or more on the Shore hardness scale, for example, D35 or more, D45 or more, or D55 or more.

  The hardness of the capsule structure 40 is determined by the manufacturing material. A suitable manufacturing material for the encapsulant structure 40 is selected based on the desired hardness. For example, the manufacturing material of the capsule structure 40 is a substantially transparent polymer material having a desired hardness, and includes silicone, rubber, epoxy resin, and the like.

  According to the above detailed description, the CSP type LED element 1A exhibits at least the following technical features. Compared with a general CSP type LED element, the photoluminescence structure 30 is in direct contact with the LED semiconductor die 10. The presence of the ceramic phosphor material reduces the contact area between the polymer material and the LED semiconductor die 10 and, as a result, the adhesive strength between them decreases. In contrast, in the CSP type LED element 1A, the polymer material of the soft buffer layer 20 contacts the entire LED semiconductor die 10. Accordingly, the bonding strength between the photoluminescent structure 30 and the LED semiconductor die 10 is greatly improved by the introduction of the soft buffer layer. Furthermore, since the soft buffer layer 20 has low hardness, it can withstand large strain deformation and reduce internal stress caused by CTE mismatch between members of the CSP type LED element 1A. Since the soft buffer layer 20 increases the adhesive force and reduces the internal stress, the package structure 200 is not easily peeled off from the LED semiconductor die 10 by the internal stress generated by the thermal cycle during the operation of the CSP type LED element 1A. . In other words, during the operation of the CSP type LED element 1A, the defective state of the element due to peeling is greatly suppressed, or the reliability is greatly improved.

  Another technical feature of the CSP-type LED element 1A is that the extended surface 221 of the edge portion 22 of the soft buffer layer 20 is a surface having a relatively smooth and slightly inclined slope, and thus the edge surface 13 of the LED semiconductor die 10. The steeper vertical stage is smooth. Without the smooth and slightly gradient soft buffer layer 221, the phosphor powder tends to settle in the binder material due to the effect of gravity, thus holding the phosphor powder on the edge surface 13 of the LED semiconductor die 10 and causing the phosphor to fluoresce. It will be difficult to form a continuous shape-adaptive coating with body material. In contrast, the soft buffer layer 20 of the CSP type LED element 1A can greatly reduce the deposition of the phosphor powder due to gravity, and as a result, the distribution of the substantially continuous phosphor powder can be reduced to the edge 22 of the soft buffer layer 20. Shape along. In other words, a substantially shape-adapted film made of phosphor powder can be realized in the photoluminescence structure 30. This eliminates the problem of blue light leakage in the CPS type LED element. Therefore, the CSP-type LED element 1A according to the present disclosure is superior in color spatial uniformity, and further improves the consistency of CCT binning.

  As another technical feature of the CSP type LED element 1A, the photoluminescence structure 30 can be formed by using a sequential deposition method of a photoluminescence material and a polymer material. Using the disclosed phosphor deposition method, a very compact and thin phosphor layer can be formed as the photoluminescent structure 30. One advantage is that the phosphor particles are deposited as a uniform, thin and compact shape-adaptive coating layer. Therefore, a considerably large “cavity” due to the photoluminescent material is not formed accordingly. As a result, the “blue light spot” phenomenon and the blue light leakage problem are eliminated, and the danger of blue light to the human eye is reduced. Another advantage is that when the high packing density photoluminescent structure 30 is formed in the embodiment of the CSP type LED element 1A, the conversion efficiency of the photoluminescent structure 30 is improved, and as a result, the CSP type LED element. It also improves the overall optical efficiency of 1A. Light extraction efficiency and light conversion efficiency can be further improved by depositing various photoluminescent materials and polymer resin materials with different refractive indices in the desired deposition order for each layer to form the photoluminescent structure 30. Please understand.

  As another technical feature of the CSP type LED element 1A, the refractive index of the encapsulant structure 40 can be selected to be smaller than the refractive index of the photoluminescence structure 30, and the refractive index of the photoluminescence structure is It can be selected to be smaller than the refractive index of the soft buffer layer 20. In other words, the refractive index of the package structure 200 can be matched. In other words, the refractive index of the package structure 200 is close to the refractive index of the surrounding environment (ie, air). Therefore, the total internal reflectance (TIR) due to the difference in reflectance along the optical path can be reduced, and the light extraction efficiency of the CSP type LED element 1A is improved accordingly.

  As another technical feature of the CSP type LED element 1A, since the encapsulant structure 40 contains no photoluminescence material, a slight geometric dimension error of the encapsulant structure 40 is related to wavelength conversion. There is no significant effect on the optical properties. In other words, the manufacturing process that determines the outer shell size of the encapsulant structure 40 (and thereby determines the outer shell size of the CSP-type LED element 1A), such as dicing or molding, has a larger machining tolerance. I will. However, desirable optical properties such as color spatial uniformity and CCT binning consistency of CSP LED element 1A are not (or rarely) sacrificed by shell dimensional errors due to machining tolerances. .

  As another technical feature of the CSP type LED element 1A, the length and width of the outer dimension of the package structure 200 are equivalent to the geometric dimension of the LED semiconductor die 10. Compared to the elements of the PLCC type LED package, the package dimensions are about 3 to 20 times larger than the value of the LED semiconductor die 10. The outer shell size of the package structure 200 according to the embodiment of the CSP type LED element 1A is desirably 100% or less, 50% or less, or 20% or less of the outer shell size of the LED semiconductor die 10. In other words, the length and width of the package structure 200 are 200% or less, 150% or less, and 120% or less of the corresponding length and width of the LED semiconductor die 10. Since a separate submount (not shown) is not provided under the LED semiconductor die 10, the CSP type LED element 1A has a dense shape factor. Furthermore, based on the specifications in another application, a reflective structure is provided on (or a part of or the entire) the four peripheral edge surfaces 200 of the package structure 200 as necessary, so that the CSP type LED element 1A is provided. The viewing angle may be further defined and limited.

  Another technical feature of the CSP-type LED element 1A is that the manufacturing material for forming the soft buffer layer 20 does not contain a substance (for example, benzene) that may cause a chemical reaction with the additive contained in the soldering flux. It is desirable to select from materials. When adhering a CSP type LED element to a substrate to be used, for example, a PCB, a reflow soldering process is usually used. During the reflow soldering process, soldering flux is usually used to improve the adhesion between the CSP-type LED element and the substrate. However, the additives contained in the soldering flux tend to react with the benzene structure, and benzene is a substance found in silicone binder materials. When made of a polymer material containing benzene, an undesirably dark colored layer is formed on the lower surface of the photoluminescent structure 30 by the chemical reaction. However, if the soft buffer layer 20 is made of a polymer material that contains no or substantially no benzene and is disposed according to the embodiment of FIG. The sense structure 30 is isolated so as not to touch the flux additives. Therefore, when the CSP type LED element 1A is bonded to the substrate by the reflow soldering process, the additive contained in the soldering flux is substantially confined under the CSP type LED element 1A by the soft buffer layer 20, The photoluminescence structure 30 is not reached. Therefore, the adverse chemical reaction between the soldering flux additive and (for example) benzene contained in the silicone binder material used to manufacture the photoluminescent structure 30 is greatly suppressed. Therefore, the deep color layer generated as a result of this chemical reaction is greatly reduced, and in addition, the optical effectiveness and reliability of the CSP type LED element 1A can be suppressed from being lowered. In other words, the soft buffer layer 20 functions as an environmental barrier layer.

  The above paragraphs are detailed descriptions of the embodiments related to the CSP type LED element 1A. A detailed description of another embodiment of the CSP type LED device according to the present disclosure is as follows. It will be appreciated that the features and advantages found in the following light emitting device embodiments are similar to the features and advantages of the CSP-type LED device 1A and are therefore omitted for the sake of brevity.

  FIG. 2 shows a schematic diagram illustrating a cross-section of a second embodiment of a CSP-type LED element according to the present disclosure. The CSP type LED element 1B is different from the CSP type LED element 1A in that at least the encapsulant structure 40 includes a lens array layer 41 having a microstructure. The microstructured lens array layer 41 and the encapsulant structure 40 may be manufactured together in a single step. The lens array layer 41 having a micro structure is composed of a plurality of micro structures 411 arranged regularly or randomly on the surface of the capsule material structure 40. Other geometric deformations of the microstructure 411 may be a hemisphere, a pyramid, a cone, a column, or the like, or may have a rough surface.

  The micro-structured lens array layer 41 can reduce the possibility that light emitted from the inside of the CSP type LED element 1B is folded at the boundary surface between the encapsulant structure 40 and the surrounding environment by total internal reflection (TIR). Therefore, light can be easily diffused from the capsule material structure 40. Therefore, the light extraction efficiency of the capsule material structure 40 is improved, and the optical effectiveness of the CSP type LED element 1B is increased.

  3A-3C show schematic diagrams illustrating a cross-section of a third embodiment of a CSP-type LED device according to the present disclosure. As shown in FIG. 3A, the CSP type LED element 1C is different from the CSP type LED element 1A in that the soft buffer layer 20 of the CSP type LED element 1C can further include light scattering particles 23. As shown in FIGS. 3B and 3C, the encapsulant structure 40 may further include light scattering particles 42 forming CSP type LED elements 1C 'and 1C' '. Both soft buffer layer 20 and encapsulant structure 40 may contain light scattering particles simultaneously (not shown).

The light is diffused by the light scattering particles 23 and 42 of the elements 1C ′ to 1C ″. As a result, optical functions such as the spatial uniformity of the colors of the CSP type LED elements 1C ′ to 1C ″ can be further improved. The light scattering particles 23 and 42 may be selected from inorganic materials such as TiO ₂ , SiO ₂ , BN, and Al ₂ O ₃ , other metals, or non-metal oxides. The light scattering particles 23 may be uniformly dispersed in the soft buffer layer 20 (as shown in FIG. 3A), and the light scattering particles 42 are also uniformly distributed in the encapsulant structure 40 (as shown in FIG. 3B). It may be dispersed. Further, as shown in FIG. 3C, the light scattering particles 42 may be formed as a shape adaptation layer on the photoluminescence structure 30, or may form the light scattering layer 43 inside the capsule material structure 40. .

  In the CSP type LED elements 1A to 1C described above, each member such as the soft buffer layer 20, the photoluminescence structure 30, or the capsule material structure 40 can be formed as a single layer structure or a multilayer structure. When each member has a single layer structure, each member is formed by solidifying the production member in a single curing step, and each member is formed as a single curing step. When each member has a multilayer structure, it is formed by curing one or a plurality of manufacturing materials in a plurality of curing steps.

  The following paragraphs describe manufacturing methods in some embodiments of CSP type LED elements according to the present disclosure. This manufacturing method provides a way of manufacturing LED elements that are essentially the same as or similar to CSP type LED elements 1A-1C, as illustrated in FIGS. Accordingly, it will be understood that some variations of the manufacturing method are omitted for the sake of brevity.

  4A-4F illustrate a manufacturing stage procedure for manufacturing a CSP type LED device according to some embodiments according to the present disclosure. The manufacturing process includes at least three manufacturing stages. That is, a plurality of LED semiconductor dies 10 are disposed on the release layer 300, a plurality of package structures 200 are formed on the LED semiconductor die 10, and a plurality of package structures 200 are individually separated. including. Detailed technical aspects of each manufacturing stage are described below.

  As shown in FIG. 4A, a release layer 300 such as a release film is first prepared, and the release layer 300 is placed on a substrate (for example, on a silicon substrate or a glass substrate, not shown). Next, a plurality of LED semiconductor dies 10 (two LED semiconductor dies 10 are shown as an example) are disposed on the release layer 300 to form an array 100 of LED semiconductor dies 10. It is desirable to embed a set of electrodes 14 of individual LED semiconductor dies 10 in the release layer 300 so that the lower surface 12 of the LED semiconductor die 10 adheres to the release layer 300 and is covered by the release layer.

  As shown in FIGS. 4B to 4D, a plurality of package structures 200 are formed on the array 100 of LED semiconductor dies 10 after being arranged to form the array 100 of LED semiconductor dies disposed on the release layer 300. To do. In this manufacturing stage, the plurality of package structures 200 are connected to each other. Specifically, the procedure for forming the package structure 200 on the LED semiconductor die 10 will be described in detail in three stages as follows.

  In the first step of forming the package structure 200 on the LED semiconductor die 10, an array of soft buffer layers 20 is formed on the array 100 of LED semiconductor dies 10, as shown in FIG. 4B. In particular, the liquid polymer material used to manufacture the soft buffer layer 20 is sprayed onto the array 100 of LED semiconductor dies 10 to spread and adhere the liquid polymer material to the top surface 11 and the edge surface 13 of the LED semiconductor die 10 ( The liquid polymer material is also spread on the release layer 300). The soft buffer layer 20 is formed by the interaction and balance of the surface tension and cohesive force of the liquid polymer material itself (eg, as described in the first embodiment of FIG. 1A, the convex top 21 and the edge 22 Including). Next, the liquid polymer material is cured and solidified. Thus, the highest point of the soft buffer layer 20 is formed near the center point of the upper surface 11 and coincides with the optical axis of the LED semiconductor die 10.

  In addition to the spraying process, the liquid polymer material used to manufacture the soft buffer layer 20 may be applied onto the array 100 of LED semiconductor dies 10 by spin coating or the like. It will be understood that the light scattering particles 23 may be premixed in the liquid polymer material. Thus, the soft buffer layer 20 including the light scattering particles 23 according to the embodiment of the CSP type LED device shown in FIG. 3A is appropriately formed.

  In the second stage of forming the package structure 200 on the LED semiconductor die 10, the array of photoluminescent structures 30 extends across the convex surface 211 and the extended surface 221 of the array of soft buffer layers 20, as shown in FIG. 4C. Apply to adapt to shape. The photoluminescent structure 30 is preferably formed using the method disclosed in US Patent Publication No. US2010 / 0119839. Specifically, a substrate for transporting an array 100 of LED semiconductor dies 10 and an array of soft buffer layers 20 prepared in the above-described manufacturing stage is disposed in a process chamber (not shown), and a photoluminescence material And a polymer material is adaptively deposited on the surface of the carrier substrate. To produce the photoluminescent structure 30, densely packed photoluminescent particles are dispersed in a process chamber and deposited uniformly on the transfer substrate, and then the transfer substrate is separated from another process. Placed in the chamber, the polymer material is then deposited on the transport substrate so that the photoluminescent particles are bonded together as a composite photoluminescent layer. The manufacturing process of preparing the layer of photoluminescent particles and preparing the polymer binder layer can be performed in the reverse order.

  When the photoluminescent structure 30 is formed by the shape-adaptive coating method described above, accurate placement to form the array 100 of LED semiconductor dies 10 on the release layer 300 may be difficult, but nevertheless. It will be appreciated that due to the nature of the shape-adaptive coating method, a plurality of photoluminescent structures 30 can be formed uniformly and symmetrically on the array 100 of LED semiconductor dies 10 and are therefore suitable for mass production. In contrast, when photoluminescent structures are formed by molding or screen printing techniques, incorrect alignment of the array of LED semiconductor dies affects the uniformity and symmetry of the photoluminescent structures. Effect.

  In the third step of forming the package structure 200 on the LED semiconductor die 10, an array of encapsulant structures 40 is formed on the array 100 of photoluminescent structures 30, as shown in FIG. 4D. In the step of forming the capsule material structure 40, the liquid polymer material used when forming the capsule material structure 40 is disposed on the photoluminescence structure 30 by, for example, dispensing, spraying, molding, spin coating, or the like. And then solidified by thermosetting. Further, the light scattering particles 42 may be mixed with a liquid polymer material in advance. In this way, the capsule material structure 40 having the light scattering particles 42 is formed based on the embodiment shown in FIG. 3B.

  As shown in FIG. 2, when the capsule material structure 40 further includes a microstructure lens array layer 41, the microstructure lens array layer 41 is attached to the capsule material structure 40 during or after the capsule material structure 40 is formed. It may be formed on the top. When a molding process is used, the capsule material structure 40 and the microstructure lens array layer 41 can be formed simultaneously in one process.

  When the package structure 200 is formed on the LED semiconductor die 10 using the mounting process, a plurality of connected package structures 200 are formed to cover the plurality of LED semiconductor dies 10. Next, as shown in FIG. 4E, the release layer 300 is removed. Thereafter, as shown in FIG. 4F, a plurality of connected package structures 200 are individually separated by dicing, and a plurality of CSP type LED elements 1 are obtained. Alternatively, the release layer 300 may be removed after the plurality of package structures 200 are individually separated.

  During the manufacturing process in which a plurality of connected package structures 200 are individually separated, the package structure is used by using a cutting tool (for example, a saw) at a position where the curvature or gradient of the extended surface 221 of the soft buffer layer 20 is minimized. It is desirable to divide 200 evenly. In other words, the cutting position is obtained and is further away from the edge surface 13 of the LED semiconductor die 10. Accordingly, the package structure 200 is cut at a relatively horizontal portion or at the horizontal portion 321 of the edge 32 of the photoluminescent structure 30. By doing so, the spatial uniformity of the color of the CSP type LED element 1 is not greatly affected by the dimensional error within the range of the dicing position tolerance. Specifically, the horizontal portion 321 of the photoluminescence structure 30 of the CSP type LED element 1 may have an asymmetric dimension due to the position tolerance in the dicing process. However, since the viewing angle of the light emitted from the LED semiconductor die 10 is in a certain range and rarely passes through the horizontal portion 321, the variation in the size of the horizontal portion 321 affects the spatial uniformity of the color. There is almost no effect.

  To summarize some embodiments, the method of manufacturing a CSP type LED device according to the present disclosure provides means for manufacturing the LED device 1 by performing batch processing suitable for mass production. According to the above-described embodiment, the CSP type LED element 1 has improved reliability, improved color spatial uniformity, increased CCT binning consistency, higher optical effectiveness, and much more Realized with a small shape factor.

  Furthermore, according to the manufacturing method disclosed in this specification, it is possible to eliminate the mold in the manufacture of the CSP type LED element 1. In other words, the dimensions of the CSP type LED element 1 are not determined by the dimensions of the mold, but instead are determined by the arrangement pitch of the array of LED dies 10. Therefore, the disclosed manufacturing method is highly scalable and suitable for manufacturing CSP type LED elements of various dimensions.

While this disclosure has been described with reference to specific embodiments, it can be variously modified and equivalent without departing from the true spirit and scope of this disclosure as defined in the appended claims. Those skilled in the art will understand that this is possible. In addition, various changes may be made to apply a particular situation, material, composition of matter, method or process to the purpose, spirit and scope of the present disclosure. All such modifications are intended to be included within the scope of the appended claims. In particular, although the methods disclosed herein are described with respect to specific operations performed in a specific order, these operations can be combined, further divided, or reversed in order to It will be understood that equivalent methods may be constructed without departing from the teachings of the disclosure. Accordingly, unless otherwise specified herein, the order and grouping of operations does not limit the present disclosure.

Claims (15)

A flip chip type comprising an upper surface, a lower surface opposite to the upper surface, an edge surface and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes disposed on the lower surface A light emitting diode (LED) semiconductor die;
A package structure,
The package structure includes a soft buffer layer including an upper portion and an edge portion, the upper portion is disposed on an upper surface of the LED semiconductor die and includes a convex surface, and the edge portion covers the edge surface of the LED semiconductor die. Including an extended surface, wherein the convex surface of the upper portion is adjacent to the extended surface of the edge,
The package structure further includes
A photoluminescence structure formed on the soft buffer layer and covering the convex surface and the extended surface;
Disposed on the photoluminescence structure, viewed contains a high encapsulant structure than the hardness of the hardness the soft buffer layer,
The upper surface of the LED semiconductor die has an edge, and the boundary between the convex surface and the extended surface of the soft buffer layer is in contact with or adjacent to the edge of the upper surface of the semiconductor die, and the convex surface And the extended surface has the same curvature at the boundary .   The light emitting device of claim 1, wherein the width and length of the package structure does not exceed 200% of the width and length of the LED semiconductor die.   The light emitting device according to claim 1, wherein a shape of the extended surface of the soft buffer layer is a concave shape, an incident angle shape, or a convex shape.   The light emitting device according to claim 1, wherein the hardness of the soft buffer layer does not exceed A80 on the Shore hardness scale, and the hardness of the capsule material structure does not fall below D30 on the Shore hardness scale.   The material of the soft buffer layer includes at least one of silicone, epoxy resin, or rubber, and the material of the encapsulant structure includes at least one of silicone, epoxy resin, or rubber. Light emitting element. Light-emitting device according to any one of claims 1 to 5 wherein the encapsulant structure further includes a micro-structure lens array layer. Light-emitting device according to any one of claims 1 to 5 comprising at least one light scattering molecules of the soft buffer layer or the encapsulant structure. The encapsulant structure further light-emitting device according to any one of claims 1 to 5 containing a light-scattering particles comprise a light scattering layer which covers the photoluminescence structure. Each member of the package structure, the light emitting device according to any one of claims 1 to 4 comprising at least one layer of polymeric resin material. A plurality of flip chip type LED semiconductor dies are arranged on the release layer to form an array of flip chip type LED semiconductor dies,
Forming an array of connected package structures on the flip chip LED semiconductor die array;
Forming the package structure includes forming the soft buffer layer array on the flip chip LED semiconductor die array by a spraying process or a spin coating process ,
Each soft buffer layer includes an upper portion and an edge, the upper portion being disposed on an upper surface of the respective LED semiconductor die, and the edge being disposed on an edge surface of the respective LED semiconductor die to cover the edge surface. The upper convex surface of the soft buffer layer is adjacent to the extended surface of the edge of the soft buffer layer;
The package structure is further formed.
Forming an array of photoluminescent structures along the convex and extended surfaces on the array of soft buffer layers;
Forming an array of encapsulant structures on the array of photoluminescent structures;
The capsule structure has a hardness higher than that of the soft buffer layer,
The formation of the packaging structure further seen including that individually separates the array of the packaging structure,
The upper surface of the LED semiconductor die has an edge, and the boundary between the convex surface and the extended surface of the soft buffer layer is in contact with or adjacent to the edge of the upper surface of the semiconductor die, and the convex surface the extended surface has the same curvature in the boundary between, the method of manufacturing the light emitting device. Forming an array of the photoluminescent structures on the array of soft buffer layers;
The flip chip type LED semiconductor die array covered with the soft buffer layer array is transferred to a process chamber using a transfer substrate;
Depositing a layer of photoluminescent material on the carrier substrate;
The method for producing a light-emitting element according to claim 10 , comprising forming a polymer binder layer on the layer of the photoluminescent material. The method of manufacturing a light-emitting element according to claim 10 , wherein forming the array of the encapsulant structure on the array of photoluminescence structures includes a spraying process, a spin coating process, a molding process, or a dispensing process. The method according to claim 10 , further comprising removing the release layer before or after individual separation of the array of package structures. The light emitting device according to claim 10 , wherein forming the array of encapsulant structures on the array of photoluminescent structures includes forming an array layer of microstructure lenses on the array of encapsulant structures. Manufacturing method. The method of manufacturing a light emitting device according to claim 14 , wherein forming the array layer of the microstructure lens and the array of the encapsulant structure includes a single molding step.