JP2003031848A - Solid-state light emitting lamp and its manufacturing method - Google Patents
Solid-state light emitting lamp and its manufacturing methodInfo
- Publication number
- JP2003031848A JP2003031848A JP2001214371A JP2001214371A JP2003031848A JP 2003031848 A JP2003031848 A JP 2003031848A JP 2001214371 A JP2001214371 A JP 2001214371A JP 2001214371 A JP2001214371 A JP 2001214371A JP 2003031848 A JP2003031848 A JP 2003031848A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state light
- metal wire
- emitting lamp
- synthetic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体発光ランプ及
び固体発光ランプの製造方法に関し、特に金属線の断線
を抑制防止する構造を備える固体発光ランプ及び固体発
光ランプの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state light-emitting lamp and a method for manufacturing a solid-state light-emitting lamp, and more particularly to a solid-state light-emitting lamp and a method for manufacturing the solid-state light-emitting lamp having a structure for preventing disconnection of metal wires.
【０００２】[0002]
【従来の技術】図２は従来の固体発光ランプの構造を示
す概略図である。図において、１は化合物半導体からな
る固体発光素子であり、リードフレーム２ａに銀ペース
ト等の接着材によりダイボンドされ固着されている。固
体発光素子１の表面には通常Ｐ型半導体領域及びＮ型半
導体領域に接続された２種類の表面電極が形成されてお
り、それら表面電極には金属線３ａ、３ｂ（３）の先端
に形成されたボールが超音波圧着によりボールボンドさ
れ、金属線３ａ、３ｂの他方は外部のリードフレーム２
ａ、２ｂに各々ワイヤーボンド接続される。尚、金属線
３ａ、３ｂは、通常、金線が利用される。2. Description of the Related Art FIG. 2 is a schematic view showing the structure of a conventional solid state light emitting lamp. In the figure, reference numeral 1 denotes a solid-state light emitting element made of a compound semiconductor, which is die-bonded and fixed to a lead frame 2a with an adhesive material such as silver paste. On the surface of the solid-state light-emitting element 1, two types of surface electrodes that are normally connected to the P-type semiconductor region and the N-type semiconductor region are formed, and these surface electrodes are formed at the tips of the metal wires 3a, 3b (3). The formed balls are ball-bonded by ultrasonic pressure bonding, and the other of the metal wires 3a and 3b is the external lead frame 2
Wire bonds are connected to a and 2b, respectively. Gold wires are usually used as the metal wires 3a and 3b.
【０００３】次に、ワイヤーボンド接続された固体発光
素子１の表面等を保護するために第１合成樹脂が被覆形
成され、保護部４を構成する。第１合成樹脂は、柔軟性
を確保するため、通常はシリコーン樹脂が用いられ、製
造時の取り扱い等を考慮して、粘度は２０００ｃＰｓ未
満とされている。また、保護部４の硬度は、固体発光素
子１との間の熱膨張率の差異から生じる歪応力等を極力
抑制するために、通常はＪＩＳ−Ａ硬度３０以下とされ
る。このような、粘度が２０００ｃＰｓ未満、硬度がＪ
ＩＳ−Ａ硬度３０以下のシリコーン樹脂により構成され
た保護部４の表面は、低粘度の影響により、通常は平坦
或いは凹状の形状となる。Next, a first synthetic resin is formed by coating so as to protect the surface of the solid-state light emitting element 1 which is wire-bonded, and the protective portion 4 is formed. The first synthetic resin is usually a silicone resin in order to ensure flexibility, and has a viscosity of less than 2000 cPs in consideration of handling during manufacturing. In addition, the hardness of the protective portion 4 is usually set to JIS-A hardness 30 or less in order to suppress strain stress and the like caused by the difference in thermal expansion coefficient between the protective portion 4 and the solid light emitting element 1 as much as possible. Such viscosity is less than 2000 cPs and hardness is J
The surface of the protective portion 4 made of a silicone resin having an IS-A hardness of 30 or less is usually flat or concave due to the influence of low viscosity.
【０００４】次に、保護部４の周囲は第１合成樹脂より
さらに硬度の大きい第２合成樹脂により封止され、外囲
封止部５が形成される。外囲封止部５が第１合成樹脂よ
り硬度の大きい第２合成樹脂により形成されるのは、外
部からの機械的作用から固体発光ランプを保護するため
である。通常、第２合成樹脂としては、硬度性と透光性
の両特性を備えるエポキシ樹脂が使用される。エポキシ
樹脂の硬度は通常ショアーＤで示され、ショアーＤ８５
乃至９０程度のものが使用される。Next, the periphery of the protective portion 4 is sealed with a second synthetic resin having a hardness higher than that of the first synthetic resin, and an outer peripheral sealing portion 5 is formed. The reason why the outer peripheral sealing portion 5 is formed of the second synthetic resin having a hardness higher than that of the first synthetic resin is to protect the solid state light emitting lamp from a mechanical action from the outside. Usually, an epoxy resin having both hardness and translucency is used as the second synthetic resin. Hardness of epoxy resin is usually indicated by Shore D, Shore D85
About 90 to 90 are used.
【０００５】即ち、従来の固体発光ランプは、固体発光
素子１と第２合成樹脂からなる外囲封止部５との間に第
２合成樹脂より硬度が小さく、柔軟性を有する第１合成
樹脂の保護部４を介在させることにより、動作時の発熱
による固体発光素子１と外囲封止部５との熱膨張率の差
異により生じる表面電極の変形、金属線３ａ、３ｂに加
わる機械的な歪を柔軟性のある第１合成樹脂で形成され
た保護部４により吸収抑制して、金属線３ａ、３ｂ等に
おける断線を防止する構造としている。That is, in the conventional solid-state light-emitting lamp, the first synthetic resin, which is less flexible than the second synthetic resin and has flexibility, is provided between the solid-state light-emitting element 1 and the outer encapsulation portion 5 made of the second synthetic resin. By interposing the protective portion 4 of the above, the deformation of the surface electrode caused by the difference in the coefficient of thermal expansion between the solid state light emitting element 1 and the surrounding encapsulation portion 5 due to the heat generated during operation, and the mechanical force applied to the metal wires 3a and 3b. The protective portion 4 formed of the flexible first synthetic resin absorbs and suppresses the strain to prevent the metal wires 3a and 3b from being broken.
【０００６】[0006]
【発明が解決しようとする課題】しかし、従来の固体発
光ランプにおいては、金属線の断線を十分に回避、低減
できないという問題があった。従来の固体発光ランプに
おける金属線の断線箇所を調査した結果、固体発光素子
の表面に形成された表面電極と金属線の先端部に形成さ
れたボールとの間での剥離は殆ど見られず、ボールの根
元付近の金属線、即ち、ボールの根元からボール数個分
程度の範囲内の金属線における断線が殆どであることが
判明した。However, the conventional solid-state light-emitting lamps have a problem that metal wire disconnection cannot be sufficiently avoided or reduced. As a result of investigating the disconnection point of the metal wire in the conventional solid-state light-emitting lamp, almost no peeling is seen between the surface electrode formed on the surface of the solid-state light-emitting element and the ball formed at the tip of the metal wire, It was found that most of the metal wires near the root of the ball, that is, the metal wires within the range of several balls from the root of the ball were broken.
【０００７】原因を種々検討したところ、金属線のボー
ル形成方法に原因があるのではないかと推察される。以
下に推察される断線メカニズムを図３に基づき説明す
る。図３は金属線の先端にボールを形成する方法と金属
線のボール付近の先端状況を示す説明図である。図３
（ａ）において、金属線３の先端部分には、電界トーチ
６を介して高電圧源７の高電圧による高電界６ａが印加
され、金属線３の先端部を溶解することにより、超音波
圧着用のボールを形成している。図３（ｂ）に、金属線
３の先端に形成されたボール部３ｃとボール部３ｃの根
元からボール数個分程度の所までの金属線３に発生した
変成部３ｄを示す。変成部３ｄの詳細な変成構造は不明
であるが、その表面に微小な荒れが発生していることか
ら、強電界による何らかの影響により、脆性化が生じ強
度的に弱い部分が生じているものと推察される。動作中
の発熱等による膨張収縮を繰り返す間に、この脆性化し
た部分から亀裂が発生拡大し、最終的に断線に至るもの
と推察される。From various studies on the causes, it is speculated that the cause may be the method of forming the balls of the metal wire. The wire breakage mechanism inferred below will be described with reference to FIG. FIG. 3 is an explanatory view showing a method of forming a ball on the tip of a metal wire and a situation of the tip near the ball of the metal wire. Figure 3
In (a), a high electric field 6a due to a high voltage of a high voltage source 7 is applied to the tip portion of the metal wire 3 via an electric field torch 6, and the tip portion of the metal wire 3 is melted to perform ultrasonic pressure bonding. Forming a ball for. FIG. 3B shows the ball portion 3c formed at the tip of the metal wire 3 and the metamorphic portion 3d formed on the metal wire 3 from the root of the ball portion 3c to about several balls. Although the detailed metamorphic structure of the metamorphic portion 3d is unknown, since the surface thereof is slightly roughened, it is considered that brittleness is caused due to some influence of the strong electric field and a weak portion is generated. Inferred. It is speculated that during repeated expansion and contraction due to heat generation during operation, cracks develop and expand from this embrittled portion, eventually leading to wire breakage.
【０００８】従来の固体発光ランプでは、上述したよう
に、固体発光素子１と第２合成樹脂からなる外囲封止部
５との間に第２合成樹脂より硬度が小さいことから柔軟
性のある第１合成樹脂からなる保護部４を介在させて、
２層の樹脂構造とすることにより固体発光素子１と外囲
封止部５との間の熱膨張率の差異に起因する膨張収縮の
繰り返しによる金属線３ａ、３ｂの断線等を防止する構
造としているが、保護部４の高さを十分に確保できてい
ないことから、金属線３の先端に形成されたボール部３
ｃの付近に発生した変成部３ｄに対しては第１合成樹脂
からなる保護部４を十分な被覆構造とすることができな
かった。As described above, the conventional solid-state light-emitting lamp is flexible because the hardness between the solid-state light-emitting element 1 and the enclosure sealing portion 5 made of the second synthetic resin is smaller than that of the second synthetic resin. With the protective portion 4 made of the first synthetic resin interposed,
A two-layer resin structure prevents a disconnection of the metal wires 3a and 3b due to repeated expansion and contraction due to a difference in coefficient of thermal expansion between the solid state light emitting element 1 and the surrounding encapsulation portion 5. However, since the height of the protection portion 4 is not sufficiently secured, the ball portion 3 formed at the tip of the metal wire 3
The protective portion 4 made of the first synthetic resin could not have a sufficient covering structure for the modified portion 3d generated in the vicinity of c.
【０００９】本発明は斯かる事情に鑑みなされたもので
あり、その目的とするところは、固体発光素子の表面電
極と外部のリードフレームとを接続する金属線における
断線の生じにくい固体発光ランプ及び固体発光ランプの
製造方法を提供することにある。The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state light-emitting lamp in which a metal wire connecting a surface electrode of a solid-state light-emitting device and an external lead frame is less likely to be broken. It is to provide a method for manufacturing a solid-state light-emitting lamp.
【００１０】また、本発明の他の目的は、金属線におけ
る断線が生じにくく、波長変換が容易な固体発光ランプ
を提供することにある。Another object of the present invention is to provide a solid-state light-emitting lamp in which breakage of a metal wire hardly occurs and wavelength conversion is easy.
【００１１】また、本発明の他の目的は、金属線におけ
る断線が生じにくく、断線率が特に小さい信頼性に優れ
た固体発光ランプを提供することにある。Another object of the present invention is to provide a solid-state light-emitting lamp which is less likely to cause breakage in a metal wire and has a particularly small breakage rate and excellent reliability.
【００１２】また、本発明の他の目的は、金属線のボー
ルが電界トーチにより形成された場合に、金属線におけ
る断線の生じにくい固体発光ランプを提供することにあ
る。Another object of the present invention is to provide a solid-state light-emitting lamp in which breakage of a metal wire is less likely to occur when the ball is formed by an electric field torch.
【００１３】[0013]
【課題を解決するための手段】第１発明に係る固体発光
ランプは、固体発光素子と、該固体発光素子の表面電極
にワイヤーボンドされた先端付近に変成部を有する金属
線と、前記固体発光素子の表面を保護すべく被覆形成さ
れた第１合成樹脂からなる保護部と、第１合成樹脂より
硬度の大きい第２合成樹脂からなる外囲封止部とを備え
た固体発光ランプであって、前記保護部が前記変成部を
被覆して形成してあることを特徴とする。According to a first aspect of the present invention, there is provided a solid-state light-emitting lamp, a solid-state light-emitting device, a metal wire wire-bonded to a surface electrode of the solid-state light-emitting device, the metal wire having a metamorphic portion near the tip, and the solid-state light-emitting device. A solid-state light-emitting lamp comprising: a protective part made of a first synthetic resin, which is formed to cover the surface of an element; and an outer peripheral sealing part made of a second synthetic resin having a hardness higher than that of the first synthetic resin. The protective portion is formed by covering the modified portion.
【００１４】第２発明に係る固体発光ランプは、第１発
明において、前記第１合成樹脂が粘度２０００ｃＰｓ乃
至４０００ｃＰｓ、ＪＩＳ−Ａ硬度３５乃至９５であ
り、前記保護部が凸レンズ状であることを特徴とする。A solid-state light-emitting lamp according to a second invention is characterized in that, in the first invention, the first synthetic resin has a viscosity of 2000 cPs to 4000 cPs and a JIS-A hardness of 35 to 95, and the protective portion has a convex lens shape. And
【００１５】第３発明に係る固体発光ランプは、第１発
明又は第２発明において、前記保護部が蛍光材を含有し
ていることを特徴とする。The solid-state light-emitting lamp according to the third invention is characterized in that, in the first invention or the second invention, the protective portion contains a fluorescent material.
【００１６】第４発明に係る固体発光ランプは、第１発
明乃至第３発明のいずれかにおいて、前記チップの表面
にワイヤーボンドされた金属線が１本であることを特徴
とする。A solid-state light-emitting lamp according to a fourth invention is characterized in that, in any one of the first to third inventions, there is one metal wire wire-bonded to the surface of the chip.
【００１７】第５発明に係る固体発光ランプは、第１発
明乃至第４発明のいずれかにおいて、前記金属線の変成
部が電界トーチによって形成されたものであることを特
徴とする。A solid-state light-emitting lamp according to a fifth aspect of the present invention is characterized in that, in any of the first to fourth aspects of the invention, the metamorphic portion of the metal wire is formed by an electric field torch.
【００１８】第６発明に係る固体発光ランプの製造方法
は、固体発光素子と、該固体発光素子の表面電極にワイ
ヤーボンドされた先端付近に変成部を有する金属線と、
前記固体発光素子の表面を保護すべく被覆形成された第
１合成樹脂からなる保護部と、第１合成樹脂より硬度の
大きい第２合成樹脂からなる外囲封止部とを備えた固体
発光ランプの製造方法であって、前記金属線の先端に電
界トーチによりボールを形成する工程と、前記固体発光
素子の表面電極に前記金属線をボールボンドする工程
と、前記金属線の変成部を被覆すべく粘度２０００ｃＰ
ｓ乃至４０００ｃＰｓの前記第１合成樹脂を前記固体発
光素子表面に塗布して前記保護部を形成する工程とを備
えたことを特徴とする。A solid-state light-emitting lamp manufacturing method according to a sixth aspect of the present invention is a solid-state light-emitting element, and a metal wire wire-bonded to a surface electrode of the solid-state light-emitting element, the metal wire having a metamorphic portion near the tip.
A solid-state light-emitting lamp including a protective part made of a first synthetic resin and formed to cover the surface of the solid-state light-emitting element, and an enclosure sealing part made of a second synthetic resin having a hardness higher than that of the first synthetic resin. A method of manufacturing a ball by an electric field torch at the tip of the metal wire; a step of ball-bonding the metal wire to a surface electrode of the solid-state light emitting device; and a transformation part of the metal wire. Viscosity 2000 cP
s to 4000 cPs of the first synthetic resin is applied to the surface of the solid state light emitting device to form the protective portion.
【００１９】第１発明においては、固体発光素子の表面
を保護すべく被覆形成された第１合成樹脂からなる保護
部を金属線の先端付近の変成部を被覆するように形成し
たので、動作時の発熱による固体発光素子と外囲封止部
との熱膨張率の差異により生じる金属線の先端付近の変
成部に加わる機械的な歪を外囲封止部より硬度の小さい
保護部により吸収抑制することができ、固体発光素子の
表面電極にワイヤーボンドされた金属線における断線を
防止することが可能となり、断線不良率の低い信頼性の
高い固体発光ランプを提供できる。In the first aspect of the invention, since the protective portion made of the first synthetic resin is formed to cover the surface of the solid-state light emitting element so as to cover the metamorphic portion near the tip of the metal wire, the protective portion is formed during operation. Suppression of mechanical strain applied to the metamorphic portion near the tip of the metal wire due to the difference in the coefficient of thermal expansion between the solid state light emitting device and the surrounding encapsulation due to the heat generated by It is possible to prevent disconnection in the metal wire wire-bonded to the surface electrode of the solid-state light-emitting element, and it is possible to provide a highly reliable solid-state light-emitting lamp with a low disconnection defect rate.
【００２０】第２発明においては、第１合成樹脂を粘度
２０００ｃＰｓ乃至４０００ｃＰｓ、ＪＩＳ−Ａ硬度３
５乃至９５とし、更に保護部の表面を凸レンズ状にした
ので、金属線のボール付近の変成部を第１合成樹脂によ
って、より確実に被覆保護することが可能となり、断線
不良率がより低く、信頼性がより高い固体発光ランプを
提供できる。即ち、この範囲の粘度にすることにより、
保護部は樹脂塗布時の形状を硬化時にもそのまま維持で
きることになり、保護部の高さを十分確保することがで
き、金属線のボール付近に発生している変成部等を完全
に被覆できる。又、この範囲の粘度では、保護部の表面
の滑らかさを十分に確保できた。更に、第１合成樹脂の
供給量を制御することで、保護部の形状を容易に凸レン
ズ状に形成でき、必要十分な保護部の高さを容易に確保
すると共に、完成品である固体発光ランプの外部発光特
性をさらに向上させることができる。In the second invention, the first synthetic resin has a viscosity of 2000 cPs to 4000 cPs and a JIS-A hardness of 3
5 to 95, and since the surface of the protective portion is formed into a convex lens shape, the metamorphic portion near the ball of the metal wire can be more surely covered and protected by the first synthetic resin, and the disconnection failure rate is lower, A solid-state light-emitting lamp having higher reliability can be provided. That is, by setting the viscosity in this range,
Since the shape of the protective portion when the resin is applied can be maintained as it is even when the resin is cured, the height of the protective portion can be sufficiently secured, and the modified portion and the like generated near the balls of the metal wire can be completely covered. In addition, with the viscosity in this range, the smoothness of the surface of the protective portion could be sufficiently ensured. Furthermore, by controlling the supply amount of the first synthetic resin, the shape of the protective portion can be easily formed into a convex lens shape, the necessary and sufficient height of the protective portion can be easily secured, and the solid-state light-emitting lamp which is a completed product. The external light emission characteristics of can be further improved.
【００２１】第３発明においては、保護部に蛍光材を含
有させた構成としたので、蛍光材の混合が容易であり、
又、混合した蛍光材が均等に分布することから、良好な
波長変換機能を有する固体発光ランプの提供が可能とな
る。In the third aspect of the invention, since the fluorescent material is contained in the protective portion, it is easy to mix the fluorescent material.
Moreover, since the mixed fluorescent material is evenly distributed, it is possible to provide a solid-state light-emitting lamp having a good wavelength conversion function.
【００２２】第４発明においては、固体発光素子の表面
電極にワイヤーボンドされる金属線を１本としたので、
断線不良率を大幅に低減でき、断線不良率の低い信頼性
の高い固体発光ランプを提供できる。According to the fourth aspect of the invention, since the number of the metal wires wire-bonded to the surface electrode of the solid state light emitting device is one,
It is possible to significantly reduce the defective disconnection rate, and to provide a highly reliable solid-state light-emitting lamp having a low defective disconnection rate.
【００２３】第５発明においては、金属線の変成部が電
界トーチによって形成されたものとしたので、電界トー
チによってボールを形成する製造工程と製造装置を利用
でき、ワイヤーボンド工程が簡易となり、製造が容易な
固体発光ランプを提供することが可能となる。In the fifth aspect of the invention, since the metamorphic portion of the metal wire is formed by the electric field torch, the manufacturing process and the manufacturing apparatus for forming the ball by the electric field torch can be utilized, and the wire bonding process can be simplified. It is possible to provide a solid-state light-emitting lamp that is easy to manufacture.
【００２４】第６発明においては、固体発光素子の表面
電極にボールボンドするための金属線先端のボールを電
界トーチにより形成する工程と、固体発光素子の表面電
極に金属線をボールボンドする工程と、金属線のボール
付近に形成された変成部を被覆するように、粘度２００
０ｃＰｓ乃至４０００ｃＰｓの第１合成樹脂を固体発光
素子の表面に塗布して保護部を形成する工程とを備えた
固体発光ランプの製造方法としたので、固体発光素子の
表面電極にボールボンドされた金属線のボール根元付近
における断線を大幅に低減することができ、断線不良率
の低い信頼性の高い固体発光ランプを容易に提供するこ
とが可能となる。In the sixth invention, a step of forming a ball at the tip of a metal wire for ball bonding to the surface electrode of the solid state light emitting element by an electric field torch and a step of ball bonding the metal wire to the surface electrode of the solid state light emitting element. , A viscosity of 200 to cover the metamorphic part formed near the ball of the metal wire.
Since the method for manufacturing a solid-state light-emitting lamp comprises a step of applying a first synthetic resin of 0 cPs to 4000 cPs to the surface of the solid-state light-emitting element to form a protective portion, the metal ball-bonded to the surface electrode of the solid-state light-emitting element is used. It is possible to significantly reduce disconnection near the ball root of the wire, and it is possible to easily provide a highly reliable solid-state light-emitting lamp with a low disconnection failure rate.
【００２５】[0025]
【発明の実施の形態】以下本発明をその実施の形態を示
す図面に基づいて詳述する。図１は本発明に係る固体発
光ランプの構造を示す概略図である。図において、１
は、例えば、ＧａＡｓ系赤色発光ダイオード、ＧａＮ系
青色発光ダイオード等の化合物半導体からなる固体発光
素子であり、リードフレーム２ａに銀ペースト等の接着
材によりダイボンドされ固着されている。固体発光素子
１の表面にはＰ型半導体領域及びＮ型半導体領域のいず
れかに接続された１種類の表面電極のみが形成されてお
り、表面電極には金属線３の先端に形成されたボールが
超音波圧着によりボールボンドされ、金属線３の他方は
外部のリードフレーム２ｂにワイヤーボンド接続されて
いる。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to the drawings showing the embodiments thereof. FIG. 1 is a schematic view showing the structure of a solid state light emitting lamp according to the present invention. In the figure, 1
Is a solid-state light emitting element made of a compound semiconductor such as a GaAs red light emitting diode or a GaN blue light emitting diode, and is die-bonded and fixed to the lead frame 2a with an adhesive such as silver paste. On the surface of the solid-state light-emitting element 1, only one type of surface electrode connected to either the P-type semiconductor region or the N-type semiconductor region is formed, and the ball formed at the tip of the metal wire 3 is formed on the surface electrode. Is ball-bonded by ultrasonic pressure bonding, and the other of the metal wires 3 is wire-bonded to the external lead frame 2b.
【００２６】金属線３は、金線であり、電界トーチによ
り先端にボールを形成される。固体発光素子１の表面に
はＰ型半導体領域及びＮ型半導体領域のいずれかに接続
された１種類の表面電極のみを形成することで、表面電
極に接続することが必要な金属線３の本数を原則として
１本に限定することができ、従来の２種類の表面電極を
有するものに比較して、断線発生率を単純計算で半分に
でき、断線不良率を大幅に低減できる。金属線３の先端
に形成するボールを電界トーチにより形成することによ
り、例えば、水素トーチによるボール形成に比較し、ボ
ール形成の製造工程と製造装置が容易で簡単になる。The metal wire 3 is a gold wire, and a ball is formed at the tip by an electric field torch. By forming only one type of surface electrode connected to either the P-type semiconductor region or the N-type semiconductor region on the surface of the solid-state light-emitting element 1, the number of metal wires 3 required to be connected to the surface electrode In principle, the number can be limited to one, and compared with the conventional one having two types of surface electrodes, the occurrence rate of disconnection can be halved by simple calculation, and the failure rate of disconnection can be significantly reduced. By forming the ball formed at the tip of the metal wire 3 by the electric field torch, the manufacturing process and the manufacturing apparatus for forming the ball are easier and simpler than the ball forming by the hydrogen torch.
【００２７】次に、ワイヤーボンド接続された固体発光
素子１の表面及び金属線３の先端部のボール付近に発生
している変成部を保護するために第１合成樹脂を被覆
し、高さＨを有する保護部４を形成する。第１合成樹脂
としてはシリコーン樹脂を用いたが、粘度２０００ｃＰ
ｓ乃至４０００ｃＰｓ、ＪＩＳ−Ａ硬度３５乃至９５の
ものとした。硬化条件は、１２０℃５分程度である。Next, a first synthetic resin is coated to protect the surface of the solid-state light emitting element 1 connected by wire bonding and the metamorphic portion generated near the ball at the tip of the metal wire 3, and the height H is applied. The protective portion 4 having is formed. Silicone resin was used as the first synthetic resin, but the viscosity was 2000 cP
s to 4000 cPs and JIS-A hardness of 35 to 95. The curing condition is 120 ° C. for about 5 minutes.
【００２８】粘度を２０００ｃＰｓ乃至４０００ｃＰｓ
としたのは、従来のように粘度が２０００ｃＰｓ程度未
満のシリコーン樹脂では、十分に必要な粘性を確保でき
ず、表面張力が小さいため、保護部４の形状を金属線３
のボール付近に発生している変成部等を保護できるよう
な十分な高さＨを持つように形成できないからであり、
粘度４０００ｃＰｓ以上とすると余りに粘度が大きくな
り、製造工程における取り扱いが困難になり、又保護部
４の形状の制御性が低下するからである。この範囲の粘
度にすることにより、保護部４は樹脂塗布時の形状を硬
化時にもそのまま維持できることから、十分な高さＨを
確保することができ、金属線３のボール付近に発生して
いる変成部等を完全に被覆できる。又、この粘度の範囲
では、保護部４の表面の滑らかさは十分に確保できた。
更に、シリコーン樹脂の供給量を制御することで、保護
部４の形状を凸レンズ状に形成でき、十分な高さＨを容
易に確保すると共に、完成品である固体発光ランプの外
部発光特性をさらに向上させることができる。Viscosity of 2000 cPs to 4000 cPs
The reason is that the conventional silicone resin having a viscosity of less than about 2000 cPs cannot secure a sufficient viscosity and the surface tension is small.
This is because it cannot be formed so as to have a height H sufficient to protect the metamorphic parts and the like generated near the ball of
This is because if the viscosity is 4000 cPs or more, the viscosity becomes too large, the handling becomes difficult in the manufacturing process, and the controllability of the shape of the protective portion 4 deteriorates. By setting the viscosity within this range, the shape of the protective portion 4 when the resin is applied can be maintained as it is even when the resin is cured, so that a sufficient height H can be secured and the protective portion 4 is generated near the balls of the metal wire 3. The metamorphic part etc. can be completely covered. Further, in this viscosity range, the smoothness of the surface of the protective portion 4 could be sufficiently ensured.
Further, by controlling the supply amount of the silicone resin, the shape of the protective portion 4 can be formed in the shape of a convex lens, the sufficient height H can be easily secured, and the external light emission characteristics of the solid-state light-emitting lamp as a finished product can be further improved. Can be improved.
【００２９】硬度をＪＩＳ−Ａ硬度３５乃至９５とした
のは、従来のように硬度がＪＩＳ−Ａ硬度３０以下のシ
リコーン樹脂では、粘性とのバランスが取れないことか
ら、保護部４の形成時の形状制御性が悪くなり、又、完
成品である固体発光ランプにおいて、熱による膨張収縮
から金属線３を保護する等の中間保護膜としての機能を
十分に発揮できないからである。The hardness is set to JIS-A hardness of 35 to 95 because the conventional silicone resin having a hardness of JIS-A hardness of 30 or less cannot balance with the viscosity. This is because the shape controllability is deteriorated, and in the solid-state light-emitting lamp which is a finished product, the function as an intermediate protective film such as protecting the metal wire 3 from expansion and contraction due to heat cannot be sufficiently exhibited.
【００３０】本発明においては、保護部４に蛍光材を混
合して、波長変換機能を持たせることができる。シリコ
ーン樹脂の粘度２０００ｃＰｓ乃至４０００ｃＰｓ、Ｊ
ＩＳ−Ａ硬度３５乃至９５は、蛍光材の混合が容易であ
り、又、混合した蛍光材が沈殿することもなく、均等に
分布した状態で硬化ができることから、良好な波長変換
機能を有する固体発光ランプを実現できる。蛍光材とし
ては、ＹＡＧ：Ｃｅ（イットリウム・アルミニウム・ガ
ーネット：セリウム）を用いた。蛍光材の量を適宜制御
することにより、必要に応じて変換波長を種々変更でき
る。例えば、青色発光素子を用いた場合、白色の固体発
光ランプを製造することができる。In the present invention, the protective portion 4 may be mixed with a fluorescent material to have a wavelength converting function. Viscosity of silicone resin 2000cPs to 4000cPs, J
The IS-A hardness of 35 to 95 is a solid having a good wavelength conversion function because it is easy to mix the fluorescent material, and the mixed fluorescent material can be cured in an evenly distributed state without precipitation. A light emitting lamp can be realized. YAG: Ce (yttrium / aluminum / garnet / cerium) was used as the fluorescent material. By appropriately controlling the amount of fluorescent material, the conversion wavelength can be variously changed as necessary. For example, when a blue light emitting element is used, a white solid state light emitting lamp can be manufactured.
【００３１】次に、保護部４の周囲及びリードフレーム
２ａ、２ｂを封止するように外囲封止部５を形成する。
外囲封止部５は、所定形状の成形型に第１合成樹脂より
硬度の大きい第２合成樹脂を充填したところへ、保護部
４及びリードフレーム２ａ、２ｂの先端部を挿入した
後、第２合成樹脂を適宜硬化させて形成する。第２合成
樹脂としてはエポキシ樹脂を用い、硬化条件は、１次硬
化が１１０℃１時間程度、脱型後の２次硬化が１３０℃
３時間程度である。これにより、図１に示す固体発光ラ
ンプが完成する。エポキシ樹脂の硬度は、ショアーＤ８
５乃至９０程度のものとし、従来のものと同様とした。
尚、ここでは、外囲封止部５の形状を砲弾型としたが、
形状はこれに限るものではなく、例えば、ガラスエポキ
シ等の基板上に固体発光素子１を実装した面実装型とし
ても良いことはいうまでも無い。Next, the outer encapsulation portion 5 is formed so as to seal the periphery of the protection portion 4 and the lead frames 2a and 2b.
The outer peripheral sealing portion 5 is formed by inserting the protective portion 4 and the leading end portions of the lead frames 2a and 2b into a molding die having a predetermined shape filled with a second synthetic resin having a hardness higher than that of the first synthetic resin. 2 Synthetic resin is appropriately cured and formed. Epoxy resin is used as the second synthetic resin, and the curing conditions are as follows: primary curing is 110 ° C. for about 1 hour, secondary curing after demolding is 130 ° C.
It takes about 3 hours. As a result, the solid state light emitting lamp shown in FIG. 1 is completed. The hardness of epoxy resin is Shore D8
It is about 5 to 90 and is the same as the conventional one.
In addition, here, the shape of the outer peripheral sealing portion 5 is a shell type,
Needless to say, the shape is not limited to this, and may be, for example, a surface mounting type in which the solid state light emitting element 1 is mounted on a substrate made of glass epoxy or the like.
【００３２】[0032]
【発明の効果】以上詳述したように、第１発明にあって
は、固体発光素子の表面電極にワイヤーボンドされた金
属線の先端付近の変成部を被覆することができ、金属線
の先端付近の変成部における断線を防止することが可能
となり、断線不良率の低い信頼性の高い固体発光ランプ
を提供することが可能となる。As described in detail above, according to the first aspect of the invention, the metamorphic portion near the tip of the metal wire wire-bonded to the surface electrode of the solid-state light emitting element can be covered, and the tip of the metal wire can be covered. It becomes possible to prevent the disconnection in the metamorphic part in the vicinity, and it is possible to provide a highly reliable solid-state light-emitting lamp with a low disconnection failure rate.
【００３３】第２発明にあっては、保護部の形状を容易
に凸レンズ状に形成でき、必要十分な保護部の高さを容
易に確保すると共に、金属線のボール付近の変成部を第
１合成樹脂の保護部によって、より確実に被覆保護する
ことが可能となり、断線不良率がより低く、信頼性がよ
り高い固体発光ランプを提供することが可能となる。
又、固体発光素子を凸レンズ状に保護することから、完
成品である固体発光ランプの外部発光特性をさらに向上
させることができる。According to the second aspect of the invention, the shape of the protective portion can be easily formed into a convex lens shape, the necessary and sufficient height of the protective portion can be easily ensured, and the metamorphic portion near the ball of the metal wire is formed by the first aspect. The protective portion made of synthetic resin enables more reliable coating protection, and it is possible to provide a solid-state light-emitting lamp having a lower disconnection failure rate and higher reliability.
Further, since the solid-state light-emitting element is protected in the shape of a convex lens, the external light-emitting characteristics of the solid-state light-emitting lamp, which is a finished product, can be further improved.
【００３４】第３発明にあっては、断線不良率の低い、
良好な波長変換機能を有する固体発光ランプの提供が可
能となる。In the third invention, the disconnection defect rate is low,
It is possible to provide a solid-state light emitting lamp having a good wavelength conversion function.
【００３５】第４発明にあっては、断線不良率を大幅に
低減でき、断線不良率の低い信頼性の高い固体発光ラン
プを提供することが可能となる。According to the fourth aspect of the present invention, it is possible to significantly reduce the disconnection defect rate and provide a highly reliable solid-state light-emitting lamp having a low disconnection defect rate.
【００３６】第５発明にあっては、金属線のボール形成
の製造工程と製造装置を容易で簡単にした固体発光ラン
プを提供することが可能となる。According to the fifth aspect of the present invention, it is possible to provide a solid-state light-emitting lamp in which the manufacturing process and manufacturing apparatus for forming a ball of a metal wire are easy and simple.
【００３７】第６発明にあっては、固体発光素子の表面
電極にボールボンドするための金属線のボールを電界ト
ーチにより形成し、金属線のボール付近に発生した変成
部を被覆するように、粘度２０００ｃＰｓ乃至４０００
ｃＰｓの第１合成樹脂を固体発光素子の表面に塗布して
保護部を形成する固体発光ランプの製造方法としたの
で、固体発光素子の表面電極にボールボンドされた金属
線における断線不良率の低い信頼性の高い固体発光ラン
プを容易に提供することが可能となる。According to the sixth aspect of the invention, a ball of a metal wire for ball-bonding to the surface electrode of the solid-state light-emitting element is formed by an electric field torch so as to cover the metamorphic portion generated near the ball of the metal wire. Viscosity 2000cPs to 4000
Since the first synthetic resin of cPs is applied to the surface of the solid-state light-emitting device to form the protective portion, the solid-state light-emitting lamp is manufactured. Therefore, the failure rate of disconnection in the metal wire ball-bonded to the surface electrode of the solid-state light-emitting device is low. It is possible to easily provide a highly reliable solid-state light emitting lamp.
【図１】本発明に係る固体発光ランプの構造を示す概略
図である。FIG. 1 is a schematic view showing a structure of a solid state light emitting lamp according to the present invention.
【図２】従来の固体発光ランプの構造を示す概略図であ
る。FIG. 2 is a schematic view showing a structure of a conventional solid state light emitting lamp.
【図３】金属線の先端にボールを形成する方法と金属線
のボール付近の先端状況を示す説明図である。FIG. 3 is an explanatory view showing a method of forming a ball on the tip of a metal wire and a situation of the tip of the metal wire near the ball.
１ 固体発光素子 ２ａ、２ｂ リードフレーム ３ 金属線 ４ 保護部 ５ 外囲封止部 1 Solid state light emitting device 2a, 2b lead frame 3 metal wires 4 protection 5 Enclosed part
Claims (6)
電極にワイヤーボンドされた先端付近に変成部を有する
金属線と、前記固体発光素子の表面を保護すべく被覆形
成された第１合成樹脂からなる保護部と、第１合成樹脂
より硬度の大きい第２合成樹脂からなる外囲封止部とを
備えた固体発光ランプであって、前記保護部が前記変成
部を被覆して形成してあることを特徴とする固体発光ラ
ンプ。1. A solid-state light-emitting device, a metal wire wire-bonded to a surface electrode of the solid-state light-emitting device, the metal wire having a metamorphic portion in the vicinity of the tip, and a first composition coated to protect the surface of the solid-state light-emitting device. A solid-state light-emitting lamp comprising: a protective part made of resin; and an outer peripheral sealing part made of a second synthetic resin having a hardness higher than that of the first synthetic resin, wherein the protective part covers the metamorphic part. A solid-state light-emitting lamp characterized by being provided.
乃至４０００ｃＰｓ、ＪＩＳ−Ａ硬度３５乃至９５であ
り、前記保護部が凸レンズ状であることを特徴とする請
求項１に記載の固体発光ランプ。2. The first synthetic resin has a viscosity of 2000 cPs.
The solid-state light-emitting lamp according to claim 1, wherein the solid-state light-emitting lamp has a convex lens shape and a JIS-A hardness of 35 to 95.
を特徴とする請求項１又は２に記載の固体発光ランプ。3. The solid-state light-emitting lamp according to claim 1, wherein the protection part contains a fluorescent material.
た金属線が１本であることを特徴とする請求項１乃至３
のいずれかに記載の固体発光ランプ。4. The number of metal wires wire-bonded to the surface of the chip is one.
The solid-state light-emitting lamp as described in any one of 1.
て形成されたものであることを特徴とする請求項１乃至
４のいずれかに記載の固体発光ランプ。5. The solid-state light-emitting lamp according to claim 1, wherein the metamorphic portion of the metal wire is formed by an electric field torch.
電極にワイヤーボンドされた先端付近に変成部を有する
金属線と、前記固体発光素子の表面を保護すべく被覆形
成された第１合成樹脂からなる保護部と、第１合成樹脂
より硬度の大きい第２合成樹脂からなる外囲封止部とを
備えた固体発光ランプの製造方法であって、前記金属線
の先端に電界トーチによりボールを形成する工程と、前
記固体発光素子の表面電極に前記金属線をボールボンド
する工程と、前記金属線の変成部を被覆すべく粘度２０
００ｃＰｓ乃至４０００ｃＰｓの前記第１合成樹脂を前
記固体発光素子表面に塗布して前記保護部を形成する工
程とを備えたことを特徴とする固体発光ランプの製造方
法。6. A solid-state light-emitting device, a metal wire wire-bonded to a surface electrode of the solid-state light-emitting device, the metal wire having a metamorphic portion in the vicinity of the tip, and a first composition coated to protect the surface of the solid-state light-emitting device. A method for manufacturing a solid-state light-emitting lamp, comprising: a protective part made of a resin; and an enclosing sealing part made of a second synthetic resin having a hardness higher than that of the first synthetic resin, wherein a ball is formed at the tip of the metal wire by an electric field torch. Forming a metal wire, ball-bonding the metal wire to the surface electrode of the solid-state light-emitting device, and a viscosity of 20 to cover the metamorphic portion of the metal wire.
And the step of applying the first synthetic resin of 00 cPs to 4000 cPs to the surface of the solid-state light-emitting element to form the protective portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001214371A JP2003031848A (en) | 2001-07-13 | 2001-07-13 | Solid-state light emitting lamp and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001214371A JP2003031848A (en) | 2001-07-13 | 2001-07-13 | Solid-state light emitting lamp and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003031848A true JP2003031848A (en) | 2003-01-31 |
Family
ID=19049206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001214371A Pending JP2003031848A (en) | 2001-07-13 | 2001-07-13 | Solid-state light emitting lamp and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003031848A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004327955A (en) * | 2003-04-09 | 2004-11-18 | Citizen Electronics Co Ltd | LED lamp |
| JP2006120844A (en) * | 2004-10-21 | 2006-05-11 | Fujikura Ltd | Semiconductor light-emitting device |
| JP2006135288A (en) * | 2004-11-05 | 2006-05-25 | Samsung Electro Mech Co Ltd | White light emitting diode package and manufacturing method thereof |
| WO2008047933A1 (en) * | 2006-10-17 | 2008-04-24 | C.I.Kasei Company, Limited | Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same |
| WO2017014574A1 (en) * | 2015-07-21 | 2017-01-26 | 엘지이노텍 주식회사 | Integrated light-emitting package |
| JP2017152681A (en) * | 2015-12-30 | 2017-08-31 | マブン オプトロニックス カンパニー リミテッドＭａｖｅｎ Ｏｐｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． | Chip scale packaging light-emitting device and manufacturing method of the same |
| JP2018060932A (en) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | LED package |
| JP2018137274A (en) * | 2017-02-20 | 2018-08-30 | 日亜化学工業株式会社 | Light emitting device |
| US10693046B2 (en) | 2015-12-30 | 2020-06-23 | Maven Optronics Co., Ltd. | Chip scale packaging light emitting device and manufacturing method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004327955A (en) * | 2003-04-09 | 2004-11-18 | Citizen Electronics Co Ltd | LED lamp |
| JP4504662B2 (en) * | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | LED lamp |
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| WO2008047933A1 (en) * | 2006-10-17 | 2008-04-24 | C.I.Kasei Company, Limited | Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same |
| WO2017014574A1 (en) * | 2015-07-21 | 2017-01-26 | 엘지이노텍 주식회사 | Integrated light-emitting package |
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| JP2017152681A (en) * | 2015-12-30 | 2017-08-31 | マブン オプトロニックス カンパニー リミテッドＭａｖｅｎ Ｏｐｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． | Chip scale packaging light-emitting device and manufacturing method of the same |
| US10693046B2 (en) | 2015-12-30 | 2020-06-23 | Maven Optronics Co., Ltd. | Chip scale packaging light emitting device and manufacturing method of the same |
| JP2018060932A (en) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | LED package |
| JP2018137274A (en) * | 2017-02-20 | 2018-08-30 | 日亜化学工業株式会社 | Light emitting device |
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