JP6350765B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000004020 conductor Substances 0.000 claims description 6
- 238000003780 insertion Methods 0.000 description 22
- 230000037431 insertion Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 14
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Description
特許文献1 国際公開第2012/66833号パンフレット
図5は、第1実施例に係る制御端子40を示す斜視図である。図5では、並行して設けられた第1の制御端子40−1および第2の制御端子40−2を示している。2つの制御端子40は、蓋部24に固定され、それぞれ対応するパッド21と接触する。
図6は、第2実施例に係る制御端子40を示す斜視図である。本例の制御端子40においては、隣接する2つの制御端子40における接触部42の距離D2は、固定部43の距離D1よりも大きい。距離D1およびD2は、それぞれの部材の最短距離を指す。このような構造により、XY面内での移動量が比較的に大きくなりやすい接触部42どうしが、接触してしまうことを抑制できる。
図8は、第3実施例に係る制御端子40を示す上面図である。本例では、それぞれの板状部41において、内側端部47に設けられた凹部46の量が、外側端部48に設けられた凹部46の量よりも多い。ここで、凹部の量とは、上面図における凹部の総面積を指す。
図9は、第4実施例に係る制御端子40を示す上面図である。本例では、それぞれの板状部41において、固定部43側の領域は、接触部42側の領域よりも凹部46の密度が高い。ここで、凹部46の密度とは、板状部41の単位長さ当たりの凹部46の量を指す。
図10は、第5実施例に係る制御端子40を示す上面図である。本例では、第2の制御端子40−2における板状部41には、第1の制御端子40−1における板状部41よりも広い範囲に凹部46が設けられている。つまり、第2の制御端子40−2において凹部46が設けられている領域のX方向における長さの絶対値が、第1の制御端子40−1において凹部46が設けられている領域のX方向における長さの絶対値が大きい。このような構成により、第2の制御部40−2の接触部42のY方向における可動範囲を、第1の制御部40−1の接触部42のY方向における可動範囲よりも広くすることができる。
図11は、第6実施例に係る制御端子40を示す斜視図である。本例では、固定部43の主面の法線方向(すなわちX方向)は、板状部41の延伸方向と平行である。本例では、板状部41と同一の幅の固定部43が、板状部41の端部においてZ方向に折れ曲がるように設けられている。
Claims (10)
- 導電材料で形成されたパッドを有する底部と、
前記底部の少なくとも一部を覆う蓋部と、
前記蓋部に固定され、それぞれ対応する前記パッドと接触する、並行して設けられた第1端子部及び第2端子部と、
パワーデバイスに流れる大電流の電流経路となる複数の主端子と、
前記複数の主端子よりも幅が小さい板形状である複数の制御端子と
を備え、
前記複数の制御端子は、前記第1端子部および前記第2端子部であり、
前記第1端子部には第1板状部が設けられており、前記第2端子部には第2板状部が設けられており、
前記第1板状部及び第2板状部はそれぞれ、前記パッドと対向する方向に主面を有し、且つ、前記パッドに向かう方向に弾性を有する
半導体装置。 - 前記第1板状部及び第2板状部は、互いに平行に設けられる
請求項1に記載の半導体装置。 - 前記第1板状部及び第2板状部の主面にはそれぞれ、端部から内側に向かう凹部が設けられている
請求項2に記載の半導体装置。 - 前記第1板状部は、隣接する前記第2板状部と対向する第1内側端部と、前記第1内側端部とは逆側の第1外側端部とを有し、
前記第2板状部は、隣接する前記第1板状部と対向する第2内側端部と、前記第2内側端部とは逆側の第2外側端部とを有し、
前記第1板状部において、前記第1内側端部に設けられた前記凹部の量が、前記第1外側端部に設けられた前記凹部の量よりも多く、
前記第2板状部において、前記第2内側端部に設けられた前記凹部の量が、前記第2外側端部に設けられた前記凹部の量よりも多い
請求項3に記載の半導体装置。 - 前記第1端子部は、
前記第1板状部の一端から延伸して設けられ、前記蓋部に固定される第1固定部と、
前記第1板状部の他端から延伸して設けられ、前記パッドと接触する第1接触部と
を有し、
前記第2端子部は、
前記第2板状部の一端から延伸して設けられ、前記蓋部に固定される第2固定部と、
前記第2板状部の他端から延伸して設けられ、前記パッドと接触する第2接触部と
を有する請求項3に記載の半導体装置。 - 前記第1接触部と前記第2接触部の間の距離は、前記第1固定部と前記第2固定部の間の距離よりも大きい
請求項5に記載の半導体装置。 - 前記第1板状部において、前記第1固定部側の領域は、前記第1接触部側の領域よりも前記凹部の密度が高く、
前記第2板状部において、前記第2固定部側の領域は、前記第2接触部側の領域よりも前記凹部の密度が高い
請求項5に記載の半導体装置。 - 前記第1固定部及び第2固定部は板形状である
請求項5に記載の半導体装置。 - 前記第1固定部の主面の法線方向は、前記第1板状部の延伸方向と平行であり、
前記第2固定部の主面の法線方向は、前記第2板状部の延伸方向と平行である
請求項8に記載の半導体装置。 - 前記第2板状部には、前記第1板状部よりも広い範囲に前記凹部が形成されている
請求項3から9のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016006451 | 2016-01-15 | ||
JP2016006451 | 2016-01-15 | ||
PCT/JP2016/086610 WO2017122471A1 (ja) | 2016-01-15 | 2016-12-08 | 半導体装置 |
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JPWO2017122471A1 JPWO2017122471A1 (ja) | 2018-04-19 |
JP6350765B2 true JP6350765B2 (ja) | 2018-07-04 |
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US (1) | US10297533B2 (ja) |
JP (1) | JP6350765B2 (ja) |
CN (1) | CN107851630B (ja) |
WO (1) | WO2017122471A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7106981B2 (ja) * | 2018-05-18 | 2022-07-27 | 富士電機株式会社 | 逆導通型半導体装置 |
JP6437700B1 (ja) * | 2018-05-29 | 2018-12-12 | 新電元工業株式会社 | 半導体モジュール |
JP6921794B2 (ja) * | 2018-09-14 | 2021-08-18 | 株式会社東芝 | 半導体装置 |
JP7244339B2 (ja) * | 2019-04-19 | 2023-03-22 | 株式会社三社電機製作所 | 半導体モジュール用外部端子 |
JP1669329S (ja) * | 2020-03-13 | 2020-10-05 | ||
USD949808S1 (en) * | 2020-11-27 | 2022-04-26 | Sansha Electric Manufacturing Co., Ltd. | Semiconductor device |
Family Cites Families (10)
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JP2560909Y2 (ja) | 1991-08-05 | 1998-01-26 | 日本インター株式会社 | 複合半導体装置 |
JP3519300B2 (ja) * | 1999-01-11 | 2004-04-12 | 富士電機デバイステクノロジー株式会社 | パワーモジュールのパッケージ構造 |
DE50013161D1 (de) | 1999-03-17 | 2006-08-24 | Eupec Gmbh & Co Kg | Leistungshalbleitermodul |
JP4329961B2 (ja) | 1999-11-15 | 2009-09-09 | 日本インター株式会社 | 複合半導体装置 |
JP5076440B2 (ja) * | 2006-10-16 | 2012-11-21 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4900165B2 (ja) * | 2007-09-27 | 2012-03-21 | 三菱電機株式会社 | 電力半導体モジュール |
EP2549534B1 (en) * | 2010-03-16 | 2019-07-03 | Fuji Electric Co., Ltd. | Semiconductor device |
JP5972172B2 (ja) | 2010-11-16 | 2016-08-17 | 富士電機株式会社 | 半導体装置 |
CN103733333B (zh) * | 2011-09-28 | 2017-04-12 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
KR101443972B1 (ko) * | 2012-10-31 | 2014-09-23 | 삼성전기주식회사 | 일체형 전력 반도체 모듈 |
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2016
- 2016-12-08 JP JP2017561547A patent/JP6350765B2/ja active Active
- 2016-12-08 CN CN201680038126.5A patent/CN107851630B/zh active Active
- 2016-12-08 WO PCT/JP2016/086610 patent/WO2017122471A1/ja active Application Filing
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US10297533B2 (en) | 2019-05-21 |
CN107851630A (zh) | 2018-03-27 |
CN107851630B (zh) | 2020-08-04 |
JPWO2017122471A1 (ja) | 2018-04-19 |
US20180122723A1 (en) | 2018-05-03 |
WO2017122471A1 (ja) | 2017-07-20 |
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