JP6209572B2 - Substrate processing equipment - Google Patents

Description

  Embodiments described herein relate generally to a substrate processing apparatus.

  As a substrate processing apparatus used in manufacturing processes such as liquid crystal and cover glass, a substrate processing apparatus has been developed which processes a substrate with a processing liquid (for example, a chemical liquid or a cleaning liquid) and then drys the substrate by blowing a gas. . A substrate processing apparatus for processing a substrate by spraying a gas (for example, a processing gas) has also been developed. Such a substrate processing apparatus performs substrate processing by blowing gas onto a substrate while conveying the substrate by a plurality of rotating rollers in a processing chamber (processing tank). In the processing chamber, means for blowing a gas such as an air knife is provided above and below the substrate transfer path. The upper air knife is configured to supply gas obliquely downward, and the lower air knife is configured to supply gas diagonally upward.

JP-A-2005-161217

  However, in the above-described processing chamber, turbulence may occur due to the flow velocity or flow rate of the gas blown to the substrate. Until the substrate is transported to the vicinity of the air knife, the gases supplied from the respective air knives collide with each other on the way, and proceed in a direction substantially parallel to the transport path and opposite to the substrate transport direction. Since the transport path is provided with a transport roller for transporting the substrate, the gas that has traveled substantially parallel to the transport path is directed downward along the curved surface (outer peripheral surface) of the transport roller by the Coanda effect. The downwardly directed air hits the bottom of the processing chamber and becomes turbulent. Most of the turbulent flow hits the back surface of the substrate being transferred into the processing chamber.

  For this reason, when the thickness of the substrate is reduced (for example, when the thickness is several millimeters or less than several millimeters), the substrate itself is lightened, and thus the substrate having a light weight is lifted by turbulence and may flutter. Further, the substrate may be displaced from the transport path due to turbulent flow. The substrate fluttering and transport deviation cause damage to the substrate (including scratches) and processing failure. Also, if the substrate flutters due to turbulent flow when the substrate is brought into the processing chamber and does not reach the air knife, the substrate does not enter the gap between the upper and lower air knives when reaching the air knife. The substrate may be damaged. From these things, it is calculated | required to suppress the flutter and conveyance deviation of a board | substrate.

  The problem to be solved by the present invention is to provide a substrate processing apparatus capable of suppressing conveyance failures such as substrate flutter and conveyance deviation.

The substrate processing apparatus according to the embodiment
A processing chamber;
A transfer unit provided in the processing chamber for transferring a substrate;
A first gas supply unit and a second gas supply unit that are individually provided above and below the transfer path so as to sandwich a transfer path through which the substrate is transferred into the processing chamber, and blow gas toward the transfer path, respectively. When,
A rectifying plate provided in the processing chamber for regulating the flow of gas;
With
Each of the first gas supply unit and the second gas supply unit has a long air outlet that blows out the gas, and the longitudinal direction of the air outlet is in a horizontal plane with respect to the transport direction of the substrate. Inclined in the same direction, the outlet is provided so as to blow out the gas upstream in the transport direction of the substrate,
A plurality of the rectifying plates are provided below the transport path so as to be orthogonal to the transport direction of the substrate in a horizontal plane, and the longitudinal direction of the outlet of the first gas supply unit or the second gas supply unit wherein arranged are displaced in the transport direction of the substrate along the respective rectifying plate has a second surface which is opposite side of the first surface and the first surface thereof, on the downstream side in the transport direction of the substrate The gas flow is provided so as to be divided into a flow along the first surface and a flow along the second surface, and among the plurality of rectifying plates , the gas flow is positioned on the most upstream side in the transport direction of the substrate. The rectifying plate is inclined toward the first gas supply unit or the second gas supply unit with respect to the rectifying plate provided at another position.

The substrate processing apparatus according to the embodiment
A processing chamber;
A transfer unit provided in the processing chamber for transferring a substrate;
A first gas supply unit and a second gas supply unit that are individually provided above and below the transfer path so as to sandwich a transfer path through which the substrate is transferred into the processing chamber, and blow gas toward the transfer path, respectively. When,
A rectifying plate provided in the processing chamber for regulating the flow of gas;
With
Each of the first gas supply unit and the second gas supply unit has a long air outlet that blows out the gas, and the longitudinal direction of the air outlet is in a horizontal plane with respect to the transport direction of the substrate. Inclined in the same direction, provided to blow the gas upstream of the transport direction of the substrate,
A plurality of the rectifying plates are provided below the transport path so as to be orthogonal to the transport direction of the substrate in a horizontal plane, and the longitudinal direction of the outlet of the first gas supply unit or the second gas supply unit Are arranged in a shifted manner in the substrate transport direction so that each rectifying plate is tilted to the downstream side in the substrate transport direction, provided on the bottom surface of the processing chamber, and among the plurality of rectifying plates, The rectifying plate located on the most upstream side in the transport direction of the substrate is inclined to the first gas supply unit or the second gas supply unit side with respect to the rectifying plate provided at another position. .

  According to an embodiment of the present invention, it is possible to suppress conveyance failures such as substrate flutter and conveyance deviation.

It is a cross-sectional view which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a longitudinal cross-sectional view (sectional view located in the A1-A1 line | wire of FIG. 1) which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is explanatory drawing for demonstrating the flow of the gas which concerns on 1st Embodiment. It is a longitudinal cross-sectional view which shows schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view which shows schematic structure of the substrate processing apparatus which concerns on 3rd Embodiment. It is sectional drawing which shows schematic structure of the substrate processing apparatus which concerns on other embodiment.

(First embodiment)
A first embodiment will be described with reference to FIGS. 1 to 3.

  As shown in FIGS. 1 and 2, a substrate processing apparatus 1 according to an embodiment includes a processing chamber 2 that processes a substrate W, a transport unit 3 that transports the substrate W, and gas to the transported substrate W. A gas supply unit 4 for spraying and a plurality of rectifying plates 5 for adjusting the flow of gas are provided. The substrate W is transported in a predetermined transport direction Ha (for example, the right direction in FIGS. 1 and 2) in the horizontal plane.

  The processing chamber 2 is a housing containing a transport path H (see FIG. 2) through which the substrate W is transported. The conveyance path H is located at the approximate center in the vertical direction of the processing chamber 2. As the substrate W, for example, a rectangular substrate such as glass is often used, and the thickness of the substrate W is about 0.5 mm as an example. Further, both surfaces (upper and lower surfaces in FIG. 2) of the substrate W before being transferred into the processing chamber 2 are wetted by a liquid such as a cleaning liquid. Note that a downflow (vertical laminar flow) occurs in the processing chamber 2, and a discharge port (not shown) for discharging the liquid removed from the substrate W is formed in the bottom surface M <b> 1 of the processing chamber 2. Has been.

  The transport unit 3 includes a plurality of long transport rollers 3a, and transports the substrate W placed on the transport rollers 3a by the rotation of the transport rollers 3a. The transport rollers 3 a are rotatably provided and are arranged at predetermined intervals so as to be orthogonal to the transport direction Ha of the substrate W in a horizontal plane, thereby forming a transport path H of the substrate W. Each of these transport rollers 3a includes a plurality of rollers 11 and a shaft 12 that holds the rollers 11, and each transport roller 3a rotates in synchronization with each other. The arrangement interval of the conveyance rollers 3a is determined according to the size of the substrate W, and each conveyance roller 3a has a gas supply position in the conveyance path H so as not to prevent gas supply to the substrate W by the gas supply unit 4. Avoid it.

  The gas supply unit 4 includes a first air knife (first gas supply unit) 4a and a second air knife (first air supply unit) that are provided one by one so as to face the upper and lower sides of the transport path H so as to sandwich the transport path H. 2 gas supply section) 4b. The first air knife 4a discharges gas (for example, air or nitrogen gas) from the upper position toward the conveyance path H, and the second air knife 4b moves from the lower position toward the conveyance path H (for example, air or nitrogen). Nitrogen gas) is discharged. This gas supply unit 4 blows gas toward the transport path H from the first air knife 4a and the second air knife 4b, and dries both surfaces of the substrate W passing through the transport path H.

  The first air knife 4a has a rectangular air outlet (long air outlet) 13 that blows out gas, and the air outlet 13 carries the gas so as to blow the gas to the upstream side in the carrying direction Ha of the substrate W. It is provided above the path H. More specifically, as shown in FIG. 1, the first air knife 4a crosses the conveyance path H, and the lower end of the first air knife 4a is in the conveyance direction Ha with respect to the upper end of the first air knife 4a. The angle θ1 (for example, 70 degrees) is provided so as to be located on the downstream side. Further, the first air knife 4a is arranged such that the air outlet 13 is directed downward and the gas is blown out toward the upstream side in the transport direction Ha. As shown in FIG. The end side of 4a opposite to the air outlet 13 is provided at an angle θ2 (for example, within a range of 50 degrees or more and 70 degrees or less) on the downstream side in the transport direction Ha. The vertical separation distance (gap) G between the air outlet 13 of the first air knife 4a and the surface of the substrate W being transferred is about several mm (for example, 3 mm).

  The second air knife 4b also has a rectangular blower outlet (long blower outlet) 13 for blowing out gas, and the blower outlet 13 is transported so that gas is blown upstream in the transport direction Ha of the substrate W. It is provided below the path H. The second air knife 4b is inclined in the same manner as the first air knife 4a (the same direction and the same angle as the first air knife 4a), and the first air knife 4a and the second air knife 4b are blown out. Mouth is facing.

  As shown in FIG. 1, each rectifying plate 5 is formed in a rectangular plate shape, and is individually provided below the transport path H so as to be orthogonal to the transport direction Ha of the substrate W in a horizontal plane. . These rectifying plates 5 are arranged so as to be shifted by a predetermined distance in the transport direction Ha of the substrate W and along the longitudinal direction of the air outlet 13 (all are shifted by the same distance). For example, the rectifying plates 5 are arranged so that an imaginary line I connecting the centers thereof is parallel to the longitudinal direction of the air outlet 13. Each rectifying plate 5 is disposed over the entire width of the substrate W (the length in the direction orthogonal to the transport direction Ha of the substrate W in the horizontal plane). The predetermined distance by which the rectifying plate 5 is shifted in the transport direction Ha is a distance such that the left side of the rectifying plate 5 adjacent to the downstream side on the right side of the rectifying plate 5 is positioned on the same straight line in the plan view of FIG. The width of the rectifying plate 5 in the transport direction Ha in the plan view of FIG.

  Further, as shown in FIG. 2, each rectifying plate 5 has a first surface 5a and a second surface 5b which is the opposite surface of the first surface 5a. The rectifying plates 5 have their upper ends tilted downstream in the transport direction Ha of the substrate W, and have a predetermined angle θ3 (for example, 50 degrees or more and 70 degrees or less) with respect to the transport path H (the bottom surface M1 of the processing chamber 2). In the range, the gas flow is individually provided on the bottom surface M1 of the processing chamber 2 so that the gas flow is divided into a flow along the first surface 5a and a flow along the second surface 5b. The inclination angles θ3 of the plurality of rectifying plates 5 are all the same angle. The separation distance between the rectifying plate 5 and the first air knife 4a (or the second air knife 4b) is set to a distance that can block turbulent flow described later. For example, polyvinyl chloride (vinyl chloride resin) can be used as the material of the current plate 5.

  Here, in the processing chamber 2 described above, a bottom chamber 2a that forms a space (gas accumulation space) in which the gas rectified by each rectifying plate 5 accumulates, and a plurality of exhaust ports 2b that exhaust gas from the bottom chamber 2a. Is provided.

  The bottom chamber 2a is upstream of all the rectifying plates 5 in the transport direction Ha of the substrate W, and is a corner portion (for example, a portion facing the air outlet 13 of the first air knife 4a in the processing chamber 2). 1 is located on the bottom surface M1 of the processing chamber 2. The bottom chamber 2a is formed in a long box shape, and is arranged so that the longitudinal direction is orthogonal to the transport direction Ha in the horizontal plane. The length L1 in the longitudinal direction of the opening of the bottom chamber 2a is a direction orthogonal in the horizontal plane to the transport direction Ha of the substrate W at the outlet 13 of the first air knife 4a (or the second air knife 4b) that has already been installed. Is shorter than half of the length (installation width) L2 (for example, shorter than half of the width of the substrate W).

  Each exhaust port 2b is arranged in a direction orthogonal to the transport direction Ha of the substrate W in the horizontal plane, and is formed on the bottom surface of the bottom chamber 2a, and discharges the gas rectified by each rectifying plate 5. These exhaust ports 2b are connected to existing exhaust devices in a factory or the like via connection pipes (none of which are shown), and the gas in the processing chamber 2 is sucked and discharged from each exhaust port 2b. .

  Next, substrate processing (for example, drying processing) performed by the above-described substrate processing apparatus 1 will be described.

  In the substrate processing, the transport rollers 3 a of the transport unit 3 rotate, and the substrate W on the transport rollers 3 a is transported in a predetermined transport direction Ha and moves along the transport path H. The gas for drying in the transport path H is blown out in advance by the first air knife 4a from above, and further, the gas for drying is also blown from below by the second air knife 4b. Being blown out. In this blowing state, when the substrate W passes through the gas supply position in the transport path H, that is, between the first air knife 4a and the second air knife 4b, the upper and lower surfaces of the substrate W are blown to the substrate W by gas blowing. The liquid adhering to the substrate is blown off, and the surface of the substrate W is dried. At this time, the liquid adhering to the surface (the upper surface and the lower surface) of the substrate W moves in the direction (plan view in FIG. 1) from the upper right corner to the lower left corner of the surface of the substrate W by blowing the gas. The upper and lower surfaces of W are sequentially dried from the upper right corner to the lower left corner.

  According to this substrate processing, the gas blown out from the first air knife 4a is blown toward the lower side of the transport path H until the substrate W reaches the gas supply position in the transport path H (before the drying process). The gas blown out from the second air knife 4b is blown upward in the transport path H. The gases from the first air knife 4a and the second air knife 4b collide with each other and merge to advance in the vicinity of the transport path H of the substrate W in a direction parallel to and opposite to the transport direction Ha. At this time, since the substrate W has not yet reached the transport path H near the first air knife 4a and the second air knife 4b, the roller 11 and the shaft 12 of the transport roller 3a exist without holding the substrate W. doing. Therefore, when a lump of gas in which the gas from the first air knife 4a and the second air knife 4b merges flows near the roller 11 or the shaft 12, the curved surface (outer peripheral surface) of the roller 11 or the shaft 12 flows. The Coanda effect is generated on the roller 11 or along the curved surface of the shaft 11, and most of the gas masses from the first air knife 4 a and the second air knife 4 b are directed toward the lower side of the processing chamber 2. It will be. The gas directed downward in the processing chamber 2 collides with the bottom surface M <b> 1 and then becomes turbulent and tends to move upward in the processing chamber 2. However, since the rectifying plate 5 is disposed so as to prevent the turbulent flow from moving upward of the processing chamber 2, it is possible to suppress the gas from colliding with the back surface of the substrate W.

  As shown in FIG. 3, the gas lump where the gas from the first air knife 4 a and the second air knife 4 b merged collides with the flow along the first surface 5 a of each rectifying plate 5 and the bottom surface M <b> 1. It is divided into a flow that hits the second surface 5b later. Each gas flows along the first surface 5 a and the second surface 5 b, and then flows easily along the bottom surface M <b> 1 of the processing chamber 2. In FIG. 3, the flow along the first surface 5a is indicated by a white arrow, and the flow along the second surface 5b on the back surface is indicated by a black arrow. However, FIG. 3 shows an image of the gas flow, and there are also portions that are different from the actual flow. The gas that has flowed along the first surface 5a is likely to flow along the bottom surface M1 of the processing chamber 2 (see the white arrow in FIG. 3), and the gas that has flowed along the second surface 5b is rectified adjacently. It becomes easy to flow along the bottom surface M1 of the processing chamber 2 while being mixed with the gas flowing along the first surface 5a of the plate 5 (see the black arrow in FIG. 3). Thereafter, the gas rectified by each rectifying plate 5 accumulates in the bottom chamber 2a and is discharged from each exhaust port 2b in the bottom chamber 2a. In this way, it is possible to suppress the generation of turbulent flow and the upward movement of the processing chamber 2, so that the substrate W can be prevented from fluttering and being displaced.

  Next, the gas blown from the first air knife 4a is blocked by the upper surface of the substrate W until the substrate W reaches the gas supply position in the transport path H and then passes (during the drying process). The gas blown out from the air knife 4b is blocked by the lower surface of the substrate W and flows downward in the transport path H. In the case where the rectifying plate 5 is not present, this gas also collides with the bottom of the processing chamber 2 and is reflected toward the transport path H, and turbulence is generated below the transport path H, so that the substrate W (particularly the substrate W W in the conveyance direction Ha downstream side of W) causes flapping. However, as described above (see FIG. 3), each rectifying plate 5 flows separately along each of the first surface 5 a and the second surface 5 b, so that the bottom surface of the processing chamber 2 directly does not pass through the rectifying plate 5. Compared with the case where it collides with M1, it becomes easier to flow along the bottom surface M1 of the processing chamber 2. The gas that has flowed along the first surface 5a is likely to flow along the bottom surface M1 of the processing chamber 2 (see the white arrow in FIG. 3), and the gas that has flowed along the second surface 5b is rectified adjacently. It becomes easy to flow along the bottom surface M1 of the processing chamber 2 while being mixed with the gas flowing along the first surface 5a of the plate 5 (see the black arrow in FIG. 3). Thereafter, the gas rectified by each rectifying plate 5 accumulates in the bottom chamber 2a and is discharged from each exhaust port 2b in the bottom chamber 2a. In this way, it is possible to suppress the generation of turbulent flow and the upward movement of the processing chamber 2, so that the substrate W can be prevented from fluttering and being displaced. Further, it is possible to prevent the liquid adhering to the substrate W from becoming a mist-like liquid, soaring due to turbulent flow, and reattaching to the lower surface of the substrate W.

  Further, since the rectifying plate 5 is provided on the bottom surface M1 of the processing chamber 2, there is no gap between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, and gas is prevented from passing through the gap. . For this reason, since it becomes possible to suppress generation | occurrence | production of the airflow which the gas which passed the clearance gap and increased the flow velocity further toward the conveyance path H can be suppressed, generation | occurrence | production of a new turbulent flow can be suppressed. However, depending on the amount and speed of the airflow, it may be possible to suppress the occurrence of turbulent flow even when the current plate 5 is not provided on the bottom surface M1 of the processing chamber 2 and is floated from the bottom surface M1. In this case, a gap may be formed between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, but the rectifying plate 5 is placed on the bottom surface M1 of the processing chamber 2 in order to surely suppress the occurrence of turbulent flow. It is desirable to provide it.

  As described above, according to the embodiment, the rectifying plate 5 is positioned below the transport path H and tilted to the downstream side in the transport direction Ha of the substrate W, and the gas flow is the flow along the first surface 5a. By providing the flow so as to be divided along the second surface 5b, the mass of gas blown out from the gas supply unit 4 is prevented from moving upward of the processing chamber 2, and then the first surface 5a and the second surface 5b. It is arranged to flow along. Thereby, since it becomes possible to suppress generation | occurrence | production of the airflow which goes to the conveyance path H and to suppress generation | occurrence | production of a turbulent flow, conveyance defects, such as the fluttering of the board | substrate W and a conveyance gap | deviation, can be suppressed.

  Further, by providing the rectifying plate 5 on the bottom surface M1 of the processing chamber 2, there is no gap between the rectifying plate 5 and the bottom surface M1 of the processing chamber 2, and gas is prevented from passing through the gap. Thereby, since it becomes possible to suppress generation | occurrence | production of the air current that the gas which passed through the clearance | gap heads for the conveyance path H, and to suppress generation | occurrence | production of a turbulent flow, the flutter and conveyance deviation of the board | substrate W can further be suppressed.

(Second Embodiment)
A second embodiment will be described with reference to FIG. In the second embodiment, differences (the suppression plate 6 and the liquid recovery plate 7) from the first embodiment will be described, and other descriptions will be omitted.

  As shown in FIG. 4, the substrate processing apparatus 1 according to the second embodiment includes a suppression plate 6 and a liquid recovery plate 7. The suppression plate 6 is provided at the upper end of the bottom chamber 2a so as to block, for example, half of the opening of the bottom chamber 2a in the short direction, and the gas in the bottom chamber 2a recovered via the rectifying plate 5 returns upward. Suppress it. The liquid recovery plate 7 is positioned above the bottom chamber 2a at a predetermined distance from the opening of the bottom chamber 2a, and is provided on the side surface M2 of the processing chamber 2. The liquid recovery plate 7 receives and recovers the liquid scattered from the substrate W passing through the transport path H toward the bottom chamber 2a on the upper surface thereof.

  The liquid recovered by the liquid recovery plate 7 is discharged from, for example, a discharge pipe (not shown) connected to the side surface M2 of the processing chamber 2. However, if the amount of liquid adhering to the liquid recovery plate 7 is small, the discharge tube is not connected to the side surface M2 of the processing chamber 2, and the liquid recovery plate 7 is absorbed by an absorbent such as cloth or sponge at the time of production stop or maintenance. It is also possible to wipe off the liquid from.

  As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, by providing the suppression plate 6, it is possible to suppress the gas in the bottom chamber 2 a from returning upward and to suppress the generation of turbulent flow. It can be surely suppressed.

  Further, by providing the liquid recovery plate 7, it becomes possible to receive and recover the liquid scattered from the substrate W passing through the transport path H toward the bottom chamber 2a, so that the liquid enters each exhaust port 2b. This can be suppressed, and the occurrence of turbulent flow due to problems such as exhaust failure can be suppressed.

(Third embodiment)
A third embodiment will be described with reference to FIG. In the third embodiment, differences from the first embodiment and the second embodiment will be described, and other descriptions will be omitted.

  As shown in FIG. 5, the substrate processing apparatus 1 according to the third embodiment includes a plurality of rectifying plates, and the rectifying plate 51 located on the most upstream side in the transport direction Ha has an inclination angle with the other rectifying plates 5. Is different. The inclination angle of the rectifying plate 51 is provided so as to be greatly inclined toward the first air knife 4a and the second air knife 4b (that is, the angle between the bottom surface M1 and the second surface 51b is small). Yes. Thus, by providing the most upstream flow regulating plate 51, the fluttering of the substrate W can be more effectively suppressed. As described above, when the substrate W has not reached the gas supply position, the mass of gas joined by the gas from the first air knife 4a and the second air knife 4b is separated by the plurality of rectifying plates 5 and the rectifying plates 51. Rectified. The flow is divided into a flow along the first surface 5a of the rectifying plate 5 and a flow along the second surface 5b, and flows along the bottom surface M1 of the processing chamber 2. In addition, at the air outlet 13 of the first air knife 4a and the second air knife 4b, the gas blown from the position farthest from each exhaust port 2b flows along the first surface 51a of the rectifying plate 51. And the flow along the second surface 51b. Here, the region between the second surface 51b and the bottom surface M1 of the current plate 51 is narrower than the region between the second surface 5b and the bottom surface M1 of the other current plate 5. Thereby, the flow velocity of the gas flowing along the second surface 51 b of the rectifying plate 51 is significantly higher than the flow velocity of the gas flowing along the second surface 5 b of the rectifying plate 5. The gas blown from the position farthest from the exhaust port 2b at the outlet 13 of the first air knife 4a and the second air knife 4b is also the same as the gas blown from a position relatively close to each exhaust port 2b. It becomes possible to discharge from each exhaust port 2b over a period of time. As a result, it is possible to more effectively suppress conveyance failures such as fluttering of the substrate W and conveyance deviation.

In the above-described embodiment, the example in which the exhaust port 2b is provided only on the bottom surface of the processing chamber 2 has been described, but the present invention is not limited thereto. FIG. 6 is a cross-sectional view of the substrate processing apparatus 1 having the exhaust port 20 on the wall surface above the transfer unit 3 in the processing chamber 2 . As shown in FIG. 6, the exhaust port 20 opens in the upstream wall surface in the transport direction Ha, and is exhausted by an exhaust device (not shown). However, as described above, it is necessary to prevent the gas from the lower side of the transfer path H from moving upward to the processing chamber 2 until the substrate W is carried into the processing chamber 2 and is transferred and reaches the gas supply position. There is. Therefore, if exhaust is performed by the exhaust device of the exhaust port 20, the gas flow in the processing chamber 2 cannot be collected on the bottom surface. At this time , the exhaust device of the exhaust port 20 is stopped. When the substrate W reaches the gas supply position and the drying process starts, the exhaust device of the exhaust port 20 is operated. As a result, the gas blown out from the first air knife 4a and reflected on the substrate W is exhausted.

As described above, even in such a configuration, the same effects as those of the above-described embodiments can be obtained. Furthermore, the airflow of the entire processing chamber 2 during the drying process can be adjusted, and the fluttering of the substrate W during the drying process can also be suppressed.

  In the above-described embodiment, the first air knife 4a (or the second air knife 4b) is moved from the state in which the longitudinal direction of the air outlet 13 is orthogonal to the transport direction Ha in the horizontal plane to the upstream side in the transport direction Ha. However, the present invention is not limited to this, and it is also possible to provide it on the opposite downstream side. In this case, the positions of the current plates 5 (51), the bottom chamber 2a, and the discharge ports 2b are changed based on the above-described embodiment.

  It is also possible to adjust the flow rate of one or both of the first air knife 4a and the second air knife 4b by an adjustment unit (not shown) according to the position of the substrate W moving on the transport path H. It is. For example, when the leading edge of the substrate reaches the gas supply position of the first air knife 4a and the second air knife 4b, both the flow rates are increased, and when the rear end of the substrate W reaches the gas supply position, Both flow rates (including zero) are reduced (for example, gas is blown out only during substrate processing). Thereby, the front end of the substrate W is appropriately transported between the first air knife 4a and the second air knife 4b, and can be processed thereafter.

  The bottom chamber 2a is provided on the bottom surface M1 of the processing chamber 2. However, the present invention is not limited to this. For example, each exhaust port 2b can be provided on the bottom surface M1 of the processing chamber 2 without providing the bottom chamber 2a. It is. Furthermore, although each exhaust port 2b is provided in the bottom face of the bottom chamber 2a, it is not restricted to this, For example, it is also possible to provide in the side surface of the bottom chamber 2a.

  Further, in each of the above embodiments, the example in which the current plate 5 (including 51) is four has been described. However, the embodiment is not limited thereto, and the first air knife 4a (or the second air knife 4b) is not limited thereto. ) And the number thereof may be determined according to the length of (). However, by providing a plurality of rectifying plates 5, the gas can flow more easily along the bottom surface M <b> 1 of the processing chamber 2. Accordingly, it is possible to further suppress conveyance failures such as fluttering and conveyance deviation of the substrate W.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Processing chamber 2a Bottom chamber 2b Exhaust port 3 Conveyance part 4a 1st gas supply part 4b 2nd gas supply part 5 Current plate 5a 1st surface 5b 2nd surface 6 Suppression plate 7 Liquid recovery plate 13 Blowing Exit H Transport path Ha Transport direction M1 Bottom surface W Substrate

Claims (8)

A processing chamber;
A transfer unit provided in the processing chamber for transferring a substrate;
A first gas supply unit and a second gas supply unit that are individually provided above and below the transfer path so as to sandwich a transfer path through which the substrate is transferred into the processing chamber, and blow gas toward the transfer path, respectively. When,
A rectifying plate provided in the processing chamber for regulating the flow of gas;
With
Each of the first gas supply unit and the second gas supply unit has a long air outlet that blows out the gas, and the longitudinal direction of the air outlet is in a horizontal plane with respect to the transport direction of the substrate. Inclined in the same direction, the outlet is provided so as to blow out the gas upstream in the transport direction of the substrate,
A plurality of the rectifying plates are provided below the transport path so as to be orthogonal to the transport direction of the substrate in a horizontal plane, and the longitudinal direction of the outlet of the first gas supply unit or the second gas supply unit wherein arranged are displaced in the transport direction of the substrate along the respective rectifying plate has a second surface which is opposite side of the first surface and the first surface thereof, on the downstream side in the transport direction of the substrate The gas flow is provided so as to be divided into a flow along the first surface and a flow along the second surface, and among the plurality of rectifying plates , the gas flow is positioned on the most upstream side in the transport direction of the substrate. The substrate processing apparatus, wherein the rectifying plate is inclined toward the first gas supply unit or the second gas supply unit with respect to the rectifying plate provided at another position . A processing chamber;
A transfer unit provided in the processing chamber for transferring a substrate;
A first gas supply unit and a second gas supply unit that are individually provided above and below the transfer path so as to sandwich a transfer path through which the substrate is transferred into the processing chamber, and blow gas toward the transfer path, respectively. When,
A rectifying plate provided in the processing chamber for regulating the flow of gas;
With
Each of the first gas supply unit and the second gas supply unit has a long air outlet that blows out the gas, and the longitudinal direction of the air outlet is in a horizontal plane with respect to the transport direction of the substrate. Inclined in the same direction, provided to blow the gas upstream of the transport direction of the substrate,
A plurality of the rectifying plates are provided below the transport path so as to be orthogonal to the transport direction of the substrate in a horizontal plane, and the longitudinal direction of the outlet of the first gas supply unit or the second gas supply unit Are arranged in a shifted manner in the substrate transport direction so that each rectifying plate is tilted to the downstream side in the substrate transport direction, provided on the bottom surface of the processing chamber, and among the plurality of rectifying plates, The rectifying plate located on the most upstream side in the transport direction of the substrate is inclined to the first gas supply unit or the second gas supply unit side with respect to the rectifying plate provided at another position. Substrate processing equipment.   The substrate processing apparatus according to claim 1, wherein the current plate is provided on a bottom surface of the processing chamber. The first gas supply unit is located on side of the conveying path,
The processing chamber is
Positioned upstream of the current plate from the flow direction of the substrate, formed on the bottom surface of the processing chamber at a location facing the air outlet of the first gas supply unit and rectified by the current plate The substrate processing apparatus according to any one of claims 1 to 3 , further comprising a plurality of exhaust ports for discharging the gas. The first gas supply unit is located on side of the conveying path,
The processing chamber is
Positioned upstream of the current plate from the flow direction of the substrate, formed on the bottom surface of the processing chamber at a location facing the air outlet of the first gas supply unit and rectified by the current plate the substrate processing apparatus according to any one of claims 1 to 3, characterized in that it has a bottom chamber which forms a space in which the gas is accumulated. The processing chamber is
The substrate processing apparatus according to claim 5 , further comprising a plurality of exhaust ports that are provided in the bottom chamber and exhaust the gas rectified by the rectifying plate. The substrate processing apparatus according to claim 5 , further comprising a suppression plate that is provided in the bottom chamber and suppresses the gas in the bottom chamber from returning upward. The substrate processing apparatus according to claim 5 , further comprising a liquid recovery plate that is provided above the bottom chamber and receives liquid scattered toward the bottom chamber.

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