JP6242954B1 - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
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- JP6242954B1 JP6242954B1 JP2016136788A JP2016136788A JP6242954B1 JP 6242954 B1 JP6242954 B1 JP 6242954B1 JP 2016136788 A JP2016136788 A JP 2016136788A JP 2016136788 A JP2016136788 A JP 2016136788A JP 6242954 B1 JP6242954 B1 JP 6242954B1
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- 230000005855 radiation Effects 0.000 title claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 106
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 77
- 239000000956 alloy Substances 0.000 claims abstract description 77
- 239000013078 crystal Substances 0.000 claims abstract description 55
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 claims abstract description 55
- 229910001007 Tl alloy Inorganic materials 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 103
- 238000007740 vapor deposition Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 14
- 229910052716 thallium Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 9
- 238000005275 alloying Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002600 positron emission tomography Methods 0.000 description 2
- 238000002603 single-photon emission computed tomography Methods 0.000 description 2
- -1 thallium halide Chemical class 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910020174 Pb-In Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- GBECUEIQVRDUKB-UHFFFAOYSA-M thallium monochloride Chemical compound [Tl]Cl GBECUEIQVRDUKB-UHFFFAOYSA-M 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (8)
- 第1電極と、第2電極と、これら第1電極と第2電極との間に設けられる臭化タリウム結晶とを備え、
前記第1電極および前記第2電極の双方または何れか一方が、タリウム金属と他の金属元素との合金からなる合金層を有する、
放射線検出器。 - 前記合金層が、前記他の金属元素として、鉛、銀、ビスマスおよびインジウムのうちの何れか1種以上の金属元素を含む、
請求項1に記載の放射線検出器。 - 前記合金層の表面に、前記合金層より低抵抗の金属からなる低抵抗金属層が設けられている、
請求項1または2に記載の放射線検出器。 - 前記低抵抗金属層が金からなる、
請求項3に記載の放射線検出器。 - 前記合金層と前記低抵抗金属層との間に、前記合金層と前記低抵抗金属層との付着力を高める導電性の中間層が設けられている、
請求項3または4に記載の放射線検出器。 - 前記中間層が、クロム、ニッケルおよびチタンのうちの何れかの金属からなる、
請求項5に記載の放射線検出器。 - 前記臭化タリウム結晶と前記合金層との間に、前記臭化タリウム結晶と前記合金層との付着力を高める導電性の下地層が設けられている、
請求項1〜6の何れか1項に記載の放射線検出器。 - 前記下地層が、クロム、ニッケルおよびチタンのうちの何れかの金属からなる、
請求項7に記載の放射線検出器。
Priority Applications (21)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016136788A JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
EP17821455.7A EP3312637B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
PCT/JP2017/022536 WO2018012209A1 (ja) | 2016-07-11 | 2017-06-19 | 放射線検出器 |
CN201910468866.8A CN110133707B (zh) | 2016-07-11 | 2017-06-19 | 放射线检测器 |
KR1020177035643A KR101886596B1 (ko) | 2016-07-11 | 2017-06-19 | 방사선 검출기 |
CN201780002213.XA CN107850683B (zh) | 2016-07-11 | 2017-06-19 | 放射线检测器 |
US15/740,524 US10782427B2 (en) | 2016-07-11 | 2017-06-19 | Radiation detector having an alloyed electrode |
EP23158768.4A EP4213225B1 (en) | 2016-07-11 | 2017-06-19 | Method for manufacturing a radiation detector |
EP21180810.0A EP3907767B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
EP20155808.7A EP3675184B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
TW107126064A TWI667491B (zh) | 2016-07-11 | 2017-06-28 | Radiation detector |
TW109134396A TWI754403B (zh) | 2016-07-11 | 2017-06-28 | 放射線檢出器 |
TW108117490A TWI709759B (zh) | 2016-07-11 | 2017-06-28 | 放射線檢出器 |
TW106121633A TWI638181B (zh) | 2016-07-11 | 2017-06-28 | Radiation detector |
IL256373A IL256373B (en) | 2016-07-11 | 2017-12-18 | radiation detector |
IL259536A IL259536B (en) | 2016-07-11 | 2018-05-22 | radiation detector |
US16/866,816 US10859717B2 (en) | 2016-07-11 | 2020-05-05 | Radiation detector |
US17/067,985 US11307315B2 (en) | 2016-07-11 | 2020-10-12 | Radiation detector |
IL278383A IL278383B (en) | 2016-07-11 | 2020-10-29 | radiation detector |
IL284812A IL284812B2 (en) | 2016-07-11 | 2021-07-13 | A method for producing a radiation detector |
US17/678,871 US11555934B2 (en) | 2016-07-11 | 2022-02-23 | Radiation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016136788A JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017215648A Division JP6430610B2 (ja) | 2017-11-08 | 2017-11-08 | 放射線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6242954B1 true JP6242954B1 (ja) | 2017-12-06 |
JP2018009801A JP2018009801A (ja) | 2018-01-18 |
Family
ID=60570427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016136788A Active JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
Country Status (8)
Country | Link |
---|---|
US (4) | US10782427B2 (ja) |
EP (4) | EP3312637B1 (ja) |
JP (1) | JP6242954B1 (ja) |
KR (1) | KR101886596B1 (ja) |
CN (2) | CN107850683B (ja) |
IL (4) | IL256373B (ja) |
TW (4) | TWI638181B (ja) |
WO (1) | WO2018012209A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022130748A1 (ja) | 2020-12-14 | 2022-06-23 | 浜松ホトニクス株式会社 | 放射線検出器、検出器モジュールおよび放射線検出器製造方法 |
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JP6688861B1 (ja) * | 2018-11-12 | 2020-04-28 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
JP7051928B2 (ja) * | 2020-04-06 | 2022-04-11 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
US20220183784A1 (en) | 2020-12-14 | 2022-06-16 | Clearpoint Neuro, Inc. | Surgical base assemblies for trajectory guide systems and associated trajectory guide systems and methods |
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