Nothing Special   »   [go: up one dir, main page]

JP6188614B2 - 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法 - Google Patents

積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法 Download PDF

Info

Publication number
JP6188614B2
JP6188614B2 JP2014066386A JP2014066386A JP6188614B2 JP 6188614 B2 JP6188614 B2 JP 6188614B2 JP 2014066386 A JP2014066386 A JP 2014066386A JP 2014066386 A JP2014066386 A JP 2014066386A JP 6188614 B2 JP6188614 B2 JP 6188614B2
Authority
JP
Japan
Prior art keywords
group
protective layer
composition
resin
device wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014066386A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015191940A (ja
Inventor
吉田　昌史
昌史 吉田
一郎 小山
一郎 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2014066386A priority Critical patent/JP6188614B2/ja
Priority to TW104108888A priority patent/TWI669372B/zh
Priority to PCT/JP2015/058832 priority patent/WO2015146950A1/ja
Publication of JP2015191940A publication Critical patent/JP2015191940A/ja
Application granted granted Critical
Publication of JP6188614B2 publication Critical patent/JP6188614B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014066386A 2014-03-27 2014-03-27 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法 Active JP6188614B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014066386A JP6188614B2 (ja) 2014-03-27 2014-03-27 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法
TW104108888A TWI669372B (zh) 2014-03-27 2015-03-20 保護層形成用組成物、積層體及套組
PCT/JP2015/058832 WO2015146950A1 (ja) 2014-03-27 2015-03-24 保護層形成用組成物、積層体およびキット

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014066386A JP6188614B2 (ja) 2014-03-27 2014-03-27 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2015191940A JP2015191940A (ja) 2015-11-02
JP6188614B2 true JP6188614B2 (ja) 2017-08-30

Family

ID=54195463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014066386A Active JP6188614B2 (ja) 2014-03-27 2014-03-27 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法

Country Status (3)

Country Link
JP (1) JP6188614B2 (zh)
TW (1) TWI669372B (zh)
WO (1) WO2015146950A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665239B (zh) * 2014-09-29 2019-07-11 日商富士軟片股份有限公司 組成物、片的製造方法、片、積層體及帶有元件晶圓的積層體
TWI701149B (zh) * 2015-11-13 2020-08-11 日商富士軟片股份有限公司 積層體的製造方法、半導體元件的製造方法
JP6610510B2 (ja) * 2015-11-26 2019-11-27 信越化学工業株式会社 ウエハ積層体及びその製造方法
JP6612683B2 (ja) * 2016-06-13 2019-11-27 東京応化工業株式会社 積層体の製造方法、及びその利用
JP6614090B2 (ja) 2016-10-11 2019-12-04 信越化学工業株式会社 ウエハ積層体及びその製造方法
WO2018159080A1 (ja) * 2017-03-02 2018-09-07 パナソニックＩｐマネジメント株式会社 樹脂組成物、プリプレグ、樹脂付きフィルム、樹脂付き金属箔、金属張積層板、及び配線板
SG11202105069PA (en) * 2018-11-16 2021-06-29 Nissan Chemical Corp Laminate peeling method, laminate, and laminate production method
JP7221046B2 (ja) * 2018-12-26 2023-02-13 東京応化工業株式会社 接着剤組成物、積層体、積層体の製造方法、及び電子部品の製造方法
JP7470409B2 (ja) 2020-08-31 2024-04-18 フジコピアン株式会社 ウェーハ加工用積層体、それを用いた薄型ウェーハの製造方法及び薄型ウェーハ個片化の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4847255B2 (ja) * 2006-08-30 2011-12-28 株式会社テオス 半導体ウエーハの加工方法
CN101903463B (zh) * 2007-12-27 2013-03-20 三井化学株式会社 丙烯类聚合物组合物
CN102160104B (zh) * 2008-09-19 2013-11-06 株式会社半导体能源研究所 半导体装置
JP5441456B2 (ja) * 2009-03-19 2014-03-12 グンゼ株式会社 バックグラインドフィルム及びその製造方法
US9847243B2 (en) * 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
JP5689269B2 (ja) * 2010-09-16 2015-03-25 日東電工株式会社 粘着テープ
JP5802106B2 (ja) * 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
JP5630451B2 (ja) * 2011-02-23 2014-11-26 信越化学工業株式会社 接着剤組成物及び接着性ドライフィルム
JP6018747B2 (ja) * 2011-12-06 2016-11-02 リンテック株式会社 ウエハ加工用粘着シート、該シートを用いた半導体ウエハの加工方法

Also Published As

Publication number Publication date
TWI669372B (zh) 2019-08-21
WO2015146950A1 (ja) 2015-10-01
TW201538675A (zh) 2015-10-16
JP2015191940A (ja) 2015-11-02

Similar Documents

Publication Publication Date Title
JP6188614B2 (ja) 積層体、保護層形成用組成物、キット、および、半導体デバイスの製造方法
KR101959770B1 (ko) 가고정 접착제, 접착 필름, 접착성 지지체, 적층체 및 키트
KR101811920B1 (ko) 지지체 분리 방법
KR101908630B1 (ko) 웨이퍼 가공체, 웨이퍼 가공용 부재, 웨이퍼 가공용 가접착재, 및 박형 웨이퍼의 제조방법
US10442961B2 (en) Composition, process for producing sheet, sheet, laminate, and laminate with device wafer
TWI661935B (zh) 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
TWI588225B (zh) 半導體裝置製造用暫時接著劑、以及使用其的接著性支持體及半導體裝置的製造方法
TWI669214B (zh) 層合體之製造方法、密封基板層合體之製造方法、密封基板層合體及密封基板
TWI732764B (zh) 暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組
JP6321163B2 (ja) 仮接着用積層体、仮接着用積層体の製造方法およびデバイスウエハ付き積層体
TW201509687A (zh) 積層體及其應用
JP6182491B2 (ja) 積層体およびその応用
TWI780066B (zh) 接著劑組成物及其利用
JP6379191B2 (ja) 仮接着膜、積層体、仮接着用組成物、デバイスの製造方法およびキット
KR101930721B1 (ko) 가접착용 적층체, 적층체 및 키트
KR20150006480A (ko) 반도체 장치 제조용 가접착제, 그것을 사용한 접착성 지지체, 및 반도체 장치의 제조 방법
KR20160134545A (ko) 분리층 형성용 조성물, 분리층, 분리층을 포함하는 적층체, 적층체의 제조 방법 및 적층체의 처리 방법
KR20230162674A (ko) 적층체, 박리제 조성물 및 가공된 반도체 기판의 제조 방법
TWI640437B (zh) 積層體及其應用
JP6691816B2 (ja) 封止体の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170329

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170718

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170801

R150 Certificate of patent or registration of utility model

Ref document number: 6188614

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250