JP5691767B2 - Substrate processing method, recording medium storing a program for executing the substrate processing method, substrate processing apparatus, and substrate processing system - Google Patents

Description

  The present invention relates to a substrate processing method for processing a substrate, a recording medium recording a program for executing the substrate processing method, a substrate processing apparatus, and a substrate processing system.

  In the manufacturing process of semiconductor devices and LCDs, a fine pattern is formed with high precision and high density on the surface of a substrate to be processed such as a semiconductor wafer or a glass substrate by utilizing a photolithography technique.

  For example, in the manufacture of semiconductor devices, after applying a resist solution to the surface of a semiconductor wafer, the resist solution is exposed to a predetermined pattern, and further developed and etched to form a predetermined circuit pattern. .

  Here, as a method for applying a resist solution to a wafer such as a semiconductor wafer, a spin coating method is mainly employed. In this spin coating method, after a resist solution is supplied to the center of the wafer, the wafer is rotated at a high speed, and the resist solution is diffused over the entire wafer by centrifugal force. This is a method of forming a resist film.

  However, according to this spin coating method, a resist film is also formed on the peripheral portion that does not contribute to the formation of a circuit pattern on the wafer. There is a possibility that the resist film formed in the peripheral portion will later become a generation source of particles. For this reason, for example, a rinsing liquid made of a solvent such as thinner is supplied to the periphery of the wafer on which the resist film is formed, and an edge rinsing process is performed to selectively remove the resist film at the position where the rinsing liquid is supplied (for example, Patent Documents) 1).

JP 2001-110712 A

  However, the substrate processing method for performing the edge rinsing process of the coating film such as the resist film as described above has the following problems.

  In the edge rinse process, it is desirable to remove only the peripheral coating film that does not contribute to the circuit pattern formation of the wafer. Therefore, it is desirable that the width from the outer edge of the wafer in the region where the coating film is removed is constant for all the wafers.

  However, the outer diameter of the wafer may vary from a predetermined reference value. When the outer diameter of the wafer fluctuates, even if the relative position of the rinsing liquid supply nozzle that supplies the rinsing liquid to the spin chuck holding the wafer is constant, the outer edge of the wafer in the region where the coating film is removed is removed. There is a risk that the width of the will fluctuate.

  In the example shown in Patent Document 1, a positioning sensor is provided in a module that removes the coating film by supplying a rinsing liquid to the peripheral portion of the wafer. However, when there are a plurality of such modules in the processing system, it is necessary to provide a positioning sensor for each module.

  In addition, the above-described problem is not limited to the case of selectively removing the coating film in the peripheral portion by supplying a rinsing liquid to the peripheral portion of the substrate, but by performing peripheral exposure on the peripheral portion of the substrate and subsequent development processing. This is also a common problem when the peripheral coating film is selectively removed.

  The present invention has been made in view of the above points, and it is not necessary to provide a positioning sensor for each module. Even when the outer diameter varies for each substrate, the region for removing the coating film in the peripheral portion of the substrate Provided are a substrate processing method and a substrate processing apparatus capable of making the width dimension constant.

  In order to solve the above-described problems, the present invention is characterized by the following measures.

In the present invention, a circular substrate having a coating film formed on the surface is held by the substrate holder and the substrate holder is rotated, and the rinse liquid is supplied to the surface of the peripheral portion of the substrate by the rinse liquid supply unit. In the substrate processing method of selectively removing the coating film at the position where the rinsing liquid is supplied by supplying,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having three or more detection units for detecting the positions of the peripheral portions of the substrate at different positions,
A step of detecting a position of a peripheral portion of the substrate by the detection unit when the holding unit is retreated and holding the substrate;
A step of determining whether any of the detection units has detected a peripheral portion of the substrate and provided with a notch based on a detection value obtained by detecting the position of the peripheral portion by the detection unit. When,
When it is determined that the detection unit has not detected a notch in the peripheral part of the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value, and the obtained center position and the reference position of the holding unit are obtained. Determining the amount of deviation between the center position of the substrate when held, and
When it is determined that one detection unit has detected the portion provided with the notch, the holding unit is moved with respect to the detection unit so that the portion provided with the notch is not detected by the detection unit. And determining the center position of the substrate and the radius of the substrate based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position, A step of obtaining a deviation amount between the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
And determining the position of the rinse liquid supply unit when supplying the rinse liquid to the surface of the peripheral part based on the obtained radius of the substrate .

In another aspect of the invention, a circular substrate having a coating film formed on the surface is held by the substrate holder and the substrate holder is rotated, and the rinse liquid is supplied to the surface of the peripheral portion of the substrate by the rinse liquid supply unit. In the substrate processing method for selectively removing the coating film at the position where the rinse liquid is supplied by supplying
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having four or more detection units for detecting the position of the peripheral part of the substrate at different positions,
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, Comparing the determined radius with the known radius of the substrate for each set of three detectors;
When it is determined from this comparison result that the detection unit has not detected a notch in the peripheral portion of the substrate, the distance between the obtained center position and the center position of the substrate when held at the reference position of the holding unit A step of determining the amount of deviation,
As a result of the comparison, when it is determined that the detected radius is different from the known radius of the substrate and that one detection unit has detected a notch in the peripheral portion of the substrate, three detections other than the one detection unit are detected. Obtaining the center position of the substrate and the radius of the substrate using the part, and obtaining a deviation amount between the obtained center position and the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
And determining the position of the rinse liquid supply unit when supplying the rinse liquid to the surface of the peripheral part based on the obtained radius of the substrate .

According to still another aspect of the present invention, a circular substrate having a coating film formed on the surface is held by the substrate holding unit and the substrate holding unit is rotated, and the rinse liquid supply unit rinses the surface of the peripheral portion of the substrate. In the substrate processing apparatus for selectively removing the coating film at the position where the rinse liquid is supplied by supplying the liquid,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having three or more detection units that detect the positions of the peripheral portions of the substrate at different positions;
A moving unit for moving the rinsing liquid supply unit;
A step of detecting a position of a peripheral portion of the substrate by the detection portion when the holding portion is retracted and holding the substrate, and based on a detection value by which the detection portion detects the position of the peripheral portion; Determining whether one of the detection units detects a peripheral portion of the substrate and having a notch, and the detection unit detects a notch in the peripheral portion of the substrate. When it is determined that the center position of the substrate and the radius of the substrate are determined based on the detected value, the center position between the determined center position and the center position of the substrate when held at the reference position of the holding unit is determined. Determining the amount of displacement; and when the one detecting unit determines that the portion provided with the notch is detected, the holding unit is configured so that the portion provided with the notch is not detected by the detecting unit. Moved relative to the detection unit, The center position of the substrate and the radius of the substrate are obtained based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position and the holding unit A step of obtaining a deviation amount between the center position of the substrate when held at the reference position and a delivery position of the substrate holding portion based on the obtained deviation amount of the center position. The step of correcting the transfer operation of the substrate transfer unit and the step of determining the position of the rinse liquid supply unit when supplying the rinse liquid to the surface of the peripheral part based on the obtained radius of the substrate are executed. And a control unit that outputs a control signal as described above.

Still another invention is that a circular substrate having a coating film formed on the surface is held by the substrate holding unit and the substrate holding unit is rotated, and the rinse liquid supply unit is provided on the surface of the peripheral portion of the substrate. In the substrate processing apparatus for selectively removing the coating film at the position where the rinse liquid is supplied by supplying the rinse liquid,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having four or more detection units for detecting the positions of the peripheral parts of the substrate at different positions;
A moving unit for moving the rinsing liquid supply unit;
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, A step of comparing the obtained radius and the known radius of the substrate for each set of three detection units, and when the detection unit determines that a notch in the peripheral portion of the substrate is not detected based on the comparison result, obtains The step of calculating the amount of deviation between the center position of the substrate and the center position of the substrate when held at the reference position of the holder, and the result of the comparison is that the calculated radius differs from the known radius of the substrate Accordingly, when it is determined that one detection unit has detected a notch in the peripheral portion of the substrate, the center position of the substrate and the radius of the substrate are obtained using three detection units other than the one detection unit, When held at the center position and the reference position of the holder The step of obtaining the amount of deviation between the center position of the substrate and the step of correcting the carrying operation of the substrate carrying unit so that the substrate is delivered to the delivery position of the substrate holding unit based on the obtained amount of deviation of the center position. A control unit that outputs a control signal to execute a step and a step of determining a position of the rinsing liquid supply unit when supplying the rinsing liquid to the surface of the peripheral part based on the determined radius of the substrate; , Provided.

In the above invention, the method of determining the position of the rinse liquid supply unit by obtaining the center position of the substrate and the outer diameter of the substrate is to hold a circular substrate having a coating film formed on the surface on the substrate holding unit, In the technique of exposing the peripheral part of the substrate by the peripheral exposure part in a state where the substrate held by the substrate holding part is rotated, the technique can also be applied to a method for determining the position of the peripheral exposure part. .

  According to another embodiment of the present invention, a coating film is formed on the surface of a substrate processing apparatus that exposes a peripheral portion of the substrate while rotating the substrate on which the coating film is formed. A substrate holding unit for holding the substrate, a rotating unit for rotating the substrate held by the substrate holding unit, a peripheral exposure unit for exposing a peripheral part of the substrate held by the substrate holding unit, and the substrate A moving unit that moves one of the holding unit and the peripheral exposure unit with respect to the other; a control unit that controls the substrate holding unit, the rotating unit, the peripheral exposure unit, and the moving unit; The controller detects a position of a peripheral portion of the substrate by a detection unit provided in the substrate transfer unit when the substrate is transferred by the substrate transfer unit in advance, and based on the detected position, In the substrate holding part when exposing the peripheral part There is provided a substrate processing apparatus that determines a relative position of the peripheral exposure unit and controls the moving unit to move the substrate holding unit or the peripheral exposure unit so that the determined relative position is reached. .

  According to the present invention, it is not necessary to provide a positioning sensor for each module, and the width dimension of the region where the coating film is removed from the peripheral portion of the substrate can be made constant even when the outer diameter varies for each substrate. .

It is a top view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a schematic perspective view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a side view which shows the structure of the resist pattern formation apparatus which concerns on 1st Embodiment. It is a perspective view which shows the structure of a 3rd block. It is a perspective view which shows the conveyance arm which concerns on 1st Embodiment. It is the top view and side view which show the conveyance arm which concerns on 1st Embodiment. It is a top view which expands and shows the fork of the conveyance arm which concerns on 1st Embodiment. It is a block diagram which shows the structure of a detection part and a control part. It is a longitudinal cross-sectional view which shows the outline of a structure of an application | coating module. It is a cross-sectional view which shows the outline of a structure of an application | coating module. It is a block diagram which shows a control part with the conveyance arm and application | coating module in a 3rd block. It is a figure which shows the state of the application | coating module at the time of delivering a wafer, and a conveyance arm. It is a graph which shows typically the relation between the pixel number of a linear image sensor, and the amount of received light. It is a top view which shows a linear image sensor and a wafer at the time of detecting the position of the peripheral part of a wafer with a linear image sensor. It is a figure which shows the state of the surface of the wafer in each process performed using an application | coating module. It is a longitudinal cross-sectional view which shows the outline of a structure of a removal module. It is a cross-sectional view which shows the outline of a structure of a removal module. It is a side view including a partial cross section of a peripheral exposure module. It is a figure which shows a mode that a wafer is periphery-exposed by a periphery exposure module. It is a figure which shows the state of the surface of a wafer at the time of periphery exposure being performed by a periphery exposure module.

Hereinafter, a case where a substrate processing system including a substrate processing apparatus according to the present invention is applied to a coating and developing apparatus will be described as an example.
(First embodiment)
First, a substrate processing apparatus and a substrate processing method according to the first embodiment of the present invention will be described. Here, a resist pattern forming apparatus in which a substrate processing system including a substrate processing apparatus according to the present embodiment is applied to a coating and developing apparatus, and an exposure apparatus is connected to the coating and developing apparatus will be described.

  FIG. 1 is a plan view showing a configuration of a resist pattern forming apparatus according to the present embodiment. FIG. 2 is a schematic perspective view showing the configuration of the resist pattern forming apparatus according to the present embodiment. FIG. 3 is a side view showing the configuration of the resist pattern forming apparatus according to the present embodiment. FIG. 4 is a perspective view showing the configuration of the third block (COT layer) B3.

  As shown in FIGS. 1 and 2, the resist pattern forming apparatus has a carrier block S1, a processing block S2, and an interface block S3. An exposure device S4 is provided on the interface block S3 side of the resist pattern forming apparatus. The processing block S2 is provided adjacent to the carrier block S1. The interface block S3 is provided on the side opposite to the carrier block S1 side of the processing block S2 so as to be adjacent to the processing block S2. The exposure apparatus S4 is provided on the side opposite to the processing block S2 side of the interface block S3 so as to be adjacent to the interface block S3.

  The carrier block S1 includes a carrier 20, a mounting table 21, and delivery means C. The carrier 20 is mounted on the mounting table 21. The delivery means C is for taking out the wafer W from the carrier 20 and delivering it to the processing block S 2, receiving the processed wafer W processed in the processing block S 2, and returning it to the carrier 20.

  As shown in FIGS. 1 and 2, the processing block S2 includes a shelf unit U1, a shelf unit U2, a first block (DEV layer) B1, a second block (BCT layer) B2, and a third block (COT layer). ) B3 and a fourth block (TCT layer) B4. The first block (DEV layer) B1 is for performing development processing. The second block (BCT layer) B2 is for performing an antireflection film forming process formed on the lower layer side of the resist film. The third block (COT layer) B3 is for performing a resist liquid coating process. The fourth block (TCT layer) B4 is for performing an antireflection film forming process formed on the upper layer side of the resist film.

  The shelf unit U1 is configured by stacking various modules. As illustrated in FIG. 3, the shelf unit U1 includes, for example, delivery modules TRS1, TRS1, CPL11, CPL2, BF2, CPL3, BF3, CPL4, and TRS4 stacked in order from the bottom. Moreover, as shown in FIG. 1, the transfer arm D which can be moved up and down is provided in the vicinity of the shelf unit U1. Wafers W are transferred by the transfer arm D between the processing modules of the shelf unit U1.

  The shelf unit U2 is configured by stacking various processing modules. As illustrated in FIG. 3, the shelf unit U2 includes delivery modules TRS6, TRS6, and CPL12 stacked in order from the bottom, for example.

  In FIG. 3, the delivery module attached with CPL also serves as a cooling module for temperature control, and the delivery module attached with BF also serves as a buffer module on which a plurality of wafers W can be placed. ing.

  The first block (DEV layer) B1 has a developing module 22, a transport arm A1, and a shuttle arm E as shown in FIGS. The development module 22 is stacked in two upper and lower stages in one first block (DEV layer) B1. The transfer arm A1 is for transferring the wafer W to the two-stage development module 22. That is, the transfer arm A1 is a common transfer arm for transferring the wafer W to the two-stage development module 22. The shuttle arm E is for directly transferring the wafer W from the delivery module CPL11 of the shelf unit U1 to the delivery module CPL12 of the shelf unit U2.

  The second block (BCT layer) B2, the third block (COT layer) B3, and the fourth block (TCT layer) B4 are respectively a coating module, a heating / cooling system processing module group, and a transfer arm A2. A3 and A4 are included. The processing module group is for performing pre-processing and post-processing of processing performed in the coating module. The transfer arms A2, A3, A4 are provided between the coating module and the processing module group, and transfer the wafer W between the processing modules of the coating module and the processing module group.

  In each block from the second block (BCT layer) B2 to the fourth block (TCT layer) B4, the chemical solution in the second block (BCT layer) B2 and the fourth block (TCT layer) B4 is used for the antireflection film. It has the same configuration except that the chemical solution in the third block (COT layer) B3 is a resist solution.

  The transfer arms A1 to A4 correspond to the substrate transfer unit in the present invention, and the configuration of the transfer arms A1 to A4 will be described later.

  The transfer means C, the transfer arm D, and the interface arm F to be described later also correspond to the substrate transfer section in the present invention. Hereinafter, the transfer arms A1 to A4 will be described as representatives of the transfer arms A1 to A4, the transfer means C, the transfer arm D, and the interface arm F described later as the substrate transfer unit.

  As shown in FIG. 1, the transport arm A1 is provided with a support member 53 that supports a detection unit 5 described later. As shown in FIG. 1, the transfer means C, the transfer arm D, and the interface arm F described later may be provided with a support member 53 that supports the detection unit 5 described later.

  Here, referring to FIG. 4, the second block (BCT layer) B2, the third block (COT layer) B3, and the fourth block (TCT layer) B4 are represented as the third block (COT layer). ) The configuration of B3 will be described.

  The third block (COT layer) B3 includes a coating module 23, a shelf unit U3, and a transfer arm A3. The shelf unit U3 includes a plurality of processing modules stacked so as to constitute a heat treatment module group such as a heating module and a cooling module. The shelf unit U3 is arranged to face the coating module 23. The transfer arm A3 is provided between the coating module 23 and the shelf unit U3. In FIG. 4, reference numeral 24 denotes a transfer port for delivering the wafer W between each processing module and the transfer arm A3.

  The interface block S3 has an interface arm F as shown in FIG. The interface arm F is provided in the vicinity of the shelf unit U2 of the processing block S2. The wafer W is transferred by the interface arm F between the processing modules of the shelf unit U2 and between the exposure units S4.

  The wafer W from the carrier block S1 is sequentially transferred by the transfer means C to one transfer module of the shelf unit U1, for example, the transfer module CPL2 corresponding to the second block (BCT layer) B2. The wafer W transferred to the transfer module CPL2 is transferred to the transfer arm A2 of the second block (BCT layer) B2, and each processing module (coating module and heating / cooling system processing module group) is transferred via the transfer arm A2. Each processing module) performs processing in each processing module. Thereby, an antireflection film is formed on the wafer W.

  The wafer W on which the antireflection film is formed is transferred to the transfer arm A3 of the third block (COT layer) B3 via the transfer arm A2, the transfer module BF2 of the shelf unit U1, the transfer arm D, and the transfer module CPL3 of the shelf unit U1. Is passed on. Then, the wafer W is transferred to each processing module (each processing module in the processing module group of the coating module and the heating / cooling system) via the transfer arm A3, and processing is performed in each processing module. Thereby, a resist film is formed on the wafer W.

  The wafer W on which the resist film is formed is transferred to the transfer module BF3 of the shelf unit U1 via the transfer arm A3.

  The wafer W on which the resist film is formed may further have an antireflection film formed in the fourth block (TCT layer) B4. In this case, the wafer W is transferred to the transfer arm A4 of the fourth block (TCT layer) B4 via the transfer module CPL4, and each processing module (processing of the coating module and heating / cooling system) is transferred via the transfer arm A4. Each processing module in the module group is transported to and processed in each processing module. Thereby, an antireflection film is formed on the wafer W. Then, the wafer W on which the antireflection film is formed is transferred to the transfer module TRS4 of the shelf unit U1 via the transfer arm A4.

  The wafer W on which the resist film is formed or the wafer W on which the antireflection film is further formed on the resist film is transferred to the transfer module CPL11 via the transfer arm D, the transfer modules BF3, and TRS4. The wafer W transferred to the transfer module CPL11 is directly transferred to the transfer module CPL12 of the shelf unit U2 by the shuttle arm E, and then transferred to the interface arm F of the interface block S3.

  The wafer W delivered to the interface arm F is transported to the exposure apparatus S4, and a predetermined exposure process is performed. The wafer W that has undergone the predetermined exposure processing is placed on the delivery module TRS6 of the shelf unit U2 via the interface arm F, and returned to the processing block S2. The wafer W returned to the processing block S2 is subjected to development processing in the first block (DEV layer) B1. The developed wafer W is returned to the carrier 20 via the transfer arm A1, the transfer module of the shelf unit U1, and the transfer means C.

  Next, with reference to FIG. 4 to FIG. 6, the transfer arms A1 to A4 which are substrate transfer units in the present invention will be described. Since the transfer arms A1 to A4 are similarly configured, the transfer arm A3 provided in the third block (COT layer) B3 will be described as a representative. FIG. 5 is a perspective view showing the transfer arm A3. FIGS. 6A and 6B are a plan view and a side view showing the transfer arm A3.

  As shown in FIGS. 4 to 6, the transfer arm A3 includes two forks 3 (3A, 3B), a base 31, a rotation mechanism 32, advance / retreat mechanisms 33A, 33B, a lifting platform 34, and a detection unit 5 (5A to 5A). 5D). Further, the transfer arm A3 is controlled by the control unit 9. The control unit 9 will be described with reference to FIGS. 8 and 9 described later.

  The two forks 3A and 3B are provided so as to overlap each other. The base 31 is provided by a rotation mechanism 32 so as to be rotatable around the vertical axis. Further, the forks 3A and 3B are respectively supported at their proximal ends by advance / retreat mechanisms 33A and 33B, and are provided so as to be able to advance and retract from the base 31 by the advance / retreat mechanisms 33A and 33B.

  The forks 3 (3A, 3B) correspond to the holding portion in the present invention. Further, the present embodiment is not limited to the example in which the two forks 3A and 3B are provided so as to overlap each other, and the two forks 3A and 3B are provided side by side in the horizontal direction. It may be. Further, the fork 3 may be only one, or three or more forks 3 may be provided so as to overlap each other in the vertical direction or arranged in the horizontal direction.

  The advance / retreat mechanisms 33A and 33B are connected to a motor M shown in FIG. 11 described later, which is a drive mechanism provided in the base 31, using a transmission mechanism such as a timing belt, and can move forward and backward from the base 31. The forks 3A and 3B provided in the are driven forward and backward. As the transmission mechanism, a known configuration such as a ball screw mechanism or a mechanism using a timing belt can be used.

  In FIG. 11 described later, the drive mechanism 33 of the advance / retreat mechanism 33 </ b> A is illustrated on the lower side of the base 31. The advance / retreat mechanism 33 </ b> A is configured to drive the forks 3 </ b> A, 3 </ b> B forward and backward from the base 31 by rotating a drive mechanism 33 provided in the base 31 by the motor M. The motor M is connected to the encoder 38. In FIG. 11, 39 is a counter that counts the number of pulses of the encoder 38.

  As shown in FIG. 4, the lifting platform 34 is provided below the rotation mechanism 32. The elevating table 34 is provided so as to be movable up and down by an elevating mechanism along a Z-axis guide rail (not shown) extending linearly in the vertical direction (Z-axis direction in FIG. 4). As the elevating mechanism, a known configuration such as a ball screw mechanism or a mechanism using a timing belt can be used. In this example, the Z-axis guide rail and the elevating mechanism are each covered by a cover body 35, and are connected and integrated, for example, on the upper side. The cover body 35 is configured to slide along a Y-axis guide rail 36 that extends linearly in the Y-axis direction.

  Next, the fork 3 and the detection unit 5 will be described with reference to FIGS. FIG. 7 is an enlarged plan view showing the fork 3A. In FIG. 7, the holding claws 4 (4A to 4D) are shown slightly enlarged with respect to the fork 3A for easy illustration. FIG. 8 is a block diagram illustrating configurations of the detection unit 5 and the control unit 9. The control unit 9 in FIG. 8 is the same as the control unit 9 described with reference to FIG. 11 described later.

  As shown in FIGS. 5 to 7, the forks 3 </ b> A and 3 </ b> B are formed in an arc shape so as to surround the periphery of the wafer W to be transferred. Further, holding claws 4 are formed on the forks 3A and 3B, respectively. The holding claws 4 protrude inward from the inner edges of the forks 3A and 3B and are spaced from each other along the inner edges, and hold the wafer W by placing the peripheral part of the wafer W thereon. Is. Three or more holding claws 4 are provided. In the example shown in FIGS. 5 and 6, four holding claws 4 </ b> A, 4 </ b> B, 4 </ b> C, and 4 </ b> D are provided in order to hold the four peripheral portions of the wafer W.

  As shown in FIGS. 5 to 7, vacuum suction portions 41 </ b> A to 41 </ b> D are provided in the holding claws 4 </ b> A to 4 </ b> D, respectively. The vacuum suction parts 41A to 41D hold the wafer W on the holding claws 4A to 4D by vacuum suctioning the peripheral part of the wafer W when the peripheral parts of the wafer W are placed on the holding claws 4A to 4D. Is. Moreover, as shown in FIG. 7, the vacuum suction portions 41A to 41D have suction holes 42A to 42D provided in the holding claws 4A to 4D. As shown in FIG. 6A, the suction holes 42A to 42D communicate with vacuum pipes 43A and 43B formed on the inside, upper surface or lower surface of the forks 3A and 3B, and through the vacuum pipes 43A and 43B, It is connected to a vacuum exhaust unit (not shown). By having such a configuration, the vacuum suction units 41 </ b> A to 41 </ b> D can vacuum-suck the wafer W.

  Forks 3A and 3B according to the present embodiment hold wafer W to holding claws 4A to 4D by vacuum suction portions 41A to 41D. Therefore, a guide is provided on the forks 3A and 3B so as to surround the periphery of the wafer W so that the horizontal position of the peripheral portion of the wafer W can be positioned, the inside of the guide is inclined, and the wafer W is fixed to the predetermined forks 3A and 3B. There is no need to have a drop mechanism to drop into position. Therefore, when the wafer W on which a coating film such as a resist film is coated is placed, the coating film coated on the outer periphery of the wafer W does not come into contact with the guide and peels off, thereby generating particles.

  As will be described later, in the present embodiment, since the position of the peripheral portion of the wafer W can be detected with high accuracy, the forks 3A and 3B only need to have a structure for placing instead of the dropping mechanism. It is not always necessary to have a vacuum suction part.

  Four detectors 5 (5A to 5D) are provided as shown in FIGS. When the forks 3A and 3B are retracted in a state where the forks 3A and 3B hold the wafer W, the detection units 5 (5A to 5D) indicate the positions of the peripheral portions of the wafer W held by the forks 3A and 3B, respectively. It is for detection at different positions. The detection unit 5 (5A to 5D) is provided so as to overlap with the peripheral portion of the wafer W held on the forks 3A and 3B when the forks 3A and 3B are retracted. Further, the four detection units 5A to 5D are provided at intervals from each other along the outer periphery of the wafer W held on the forks 3A and 3B when the forks 3A and 3B are retracted in plan view. .

  The detection unit 5 (5A to 5D) includes a pair of light sources 51 (51A to 51D) and a light receiving unit 52 in which a plurality of light receiving elements are arranged. Further, as the light receiving unit 52, for example, linear image sensors 52 (52A to 52D) can be used. The light sources 51 (51A to 51D) and the linear image sensors 52 (52A to 52D) are provided so as to sandwich any of the wafers W held by the retracted forks 3A and 3B from above and below. The detection units 5A to 5D are positioned at the peripheral portion of the wafer W held by any one of the forks 3A and 3B when any one of the forks 3A and 3B is retracted while holding the wafer W. It is for detecting.

  Specifically, one of the light source 51 (51A to 51D) and the linear image sensor 52 (52A to 52D) is provided below the two forks 3A and 3B, and the other is the two forks 3A and 3B. Provided above. When either one of the light source 51 (51A to 51D) or the linear image sensor 52 (52A to 52D) is provided below the two forks 3A and 3B, it may be attached to the base 31 and It may be attached to the base 31 side of the side fork 3B. On the other hand, when either the light source 51 (51A to 51D) or the linear image sensor 52 (52A to 52D) is provided above the two forks 3A and 3B, it may be attached to the base 31. The upper fork 3A may be attached to the side opposite to the base 31 side.

  In the example shown in FIGS. 5 and 6, the light source 51 is attached to the base 31 and the linear image sensor 52 is attached to the base 31 via the support member 53.

  By having the above-described configuration, both the light source 51 and the linear image sensor 52 are connected to the fork 3A, to detect a position of the peripheral portion of the wafer W held on each of the two forks 3A, 3B. It is not necessary to provide every 3B. Therefore, the number of light sources 51 and linear image sensors 52 to be used can be reduced.

  However, a configuration in which four detection units 5 are provided on the two forks 3A and 3B is also possible. When four detection units 5 are provided for each of the forks 3A and 3B, the pair of the light sources 51 and the linear image sensor 52 that constitute the detection unit 5 are the wafers W held by the retracted forks 3A and 3B. Any of those may be provided so as to sandwich either of them from above and below.

  Further, by providing four detection units 5 (5A to 5D), as will be described later, the peripheral portion of the wafer W can be held even when the wafer W having a notch (notch portion) WN is held and transported. Can be detected with high accuracy. Note that four or more detection units 5 may be provided.

  Hereinafter, an example in which an LED (Light Emitting Diode) is used will be described as the light source 51. Specifically, a light source in which a plurality of LEDs are linearly arranged, or a linear shape on the light emitting side of a single LED. It is possible to use a light source provided with a linear light source. As the linear image sensor 52, various linear image sensors such as a charge coupled device (CCD) line sensor, a fiber line sensor, and a photoelectric sensor can be used. That is, various light receiving elements such as a CCD and a photoelectric sensor can be used as the light receiving element of the light receiving unit 52 formed of a linear image sensor. In the following, an example in which a CCD line sensor is used as a representative of these various linear image sensors will be described.

  As shown in FIG. 8, the detection unit 5 </ b> A includes a CCD line sensor control unit 54, a digital / analog converter (DAC) 55, and an analog / digital converter (ADC) 56 in addition to the LED 51 and the CCD line sensor 52. Moreover, although illustration is abbreviate | omitted in FIG. 8, the detection parts 5B, 5C, and 5D also have the structure similar to the detection part 5A.

  The CCD line sensor control unit 54 is a timing generator for shifting the operation timing of each CCD element of the CCD line sensor 52 on the basis of a clock signal from a clock (not shown) to move charges. The CCD line sensor control unit 54 also controls the current of the LED 51. The DAC 55 is for converting a digital control signal from the CCD line sensor control unit 54 into an analog signal so as to be input to the LED 51. The ADC 56 is for digitally converting an analog output signal, which is a detection signal from the CCD line sensor 52, so as to be output from the detection units 5A to 5D.

  A detection signal (detection value) output from the detection unit 5 is input to the control unit 9. The control unit 9 is provided via the amplifier 57 in the motors M1 and M2 for driving the X axis provided in the advance / retreat mechanisms 33A and 33B, the motor M3 for driving the Y axis provided in the base 31, and the lifting platform 34. A total of five-axis driving motors M1 to M5 of the Z-axis driving motor M4 and the rotation driving motor M5 provided in the rotation mechanism 32 are controlled.

  With the above-described configuration, the control signal from the CCD line sensor control unit 54 is converted into an analog signal by the DAC 55, and the analog converted control signal is input to the LED 51, whereby the LED 51 emits light in a straight line. Light emitted from the LED 51 is received by the CCD line sensor 52. The CCD line sensor 52 that has received the light outputs a signal corresponding to the amount of received light by being moved in the sensor based on the timing of the control signal from the CCD line sensor control unit 54. The detection signal (detection value) output from the CCD line sensor 52 is digitally converted by the ADC 56 and then input to the arithmetic processing unit 91 in the control unit 9.

  In the control unit 9, including the processing in the arithmetic processing unit 91, the position of the peripheral part of the wafer W is measured based on the detected value, the center position of the wafer W is calculated, the radius of the wafer W is calculated, It is determined whether or not any of the four detectors 5A to 5D has detected the notch WN of the wafer W. When it is determined that one of the four detection units 5A to 5D has detected the notch WN, the position of the peripheral portion of the wafer W is determined based on the detection values of the other three detection units 5. To detect.

  Next, the configuration of the coating module 23 that is the substrate processing apparatus according to the present embodiment will be described. FIG. 9 is a longitudinal sectional view showing an outline of the configuration of the coating module 23. FIG. 10 is a cross-sectional view illustrating the outline of the configuration of the coating module 23.

  For example, as shown in FIG. 9, the coating module 23 includes a casing 60, and a spin chuck 61 that holds the wafer W is provided in the center of the casing 60. The spin chuck 61 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 61 by suction from the suction port.

  The spin chuck 61 has a chuck drive mechanism 62 including, for example, a motor, and can be rotated at a predetermined speed by the chuck drive mechanism 62. Further, the chuck drive mechanism 62 is provided with a lift drive means such as a cylinder, and the spin chuck 61 can move up and down.

  The spin chuck 61 corresponds to the substrate holding portion in the present invention, and the chuck drive mechanism 62 corresponds to the rotating portion in the present invention.

  Further, the rotation speed of the spin chuck 61 driven by the chuck driving mechanism 62 is controlled by the control unit 9 described later.

  Around the spin chuck 61, there is provided a cup 63 that receives and collects the liquid scattered or dropped from the wafer W. A lower surface of the cup 63 is connected to a discharge pipe 64 that discharges the collected liquid and an exhaust pipe 65 that exhausts the atmosphere in the cup 63.

  As shown in FIG. 10, a rail 70 extending along the Y direction (left and right direction in FIG. 10) is formed on the X direction negative direction (downward direction in FIG. 10) side of the cup 63. The rail 70 is formed, for example, from the outside of the cup 63 on the Y direction negative direction (left direction in FIG. 10) side to the outside on the Y direction positive direction (right direction in FIG. 10) side. For example, two arms 71 and 72 are attached to the rail 70.

  As shown in FIGS. 9 and 10, a resist solution nozzle 73 that discharges a resist solution as a coating solution is supported on the first arm 71. The first arm 71 is movable on the rail 70 by a nozzle driving unit 74 shown in FIG. As a result, the resist solution nozzle 73 can move from the standby part 75 installed on the outer side of the cup 63 on the positive side in the Y direction to substantially above the center of the wafer W in the cup 63, and further on the surface of the wafer W. It can move in the radial direction of the wafer W. The first arm 71 can be moved up and down by a nozzle driving unit 74 and the height of the resist solution nozzle 73 can be adjusted.

  The resist solution nozzle 73 corresponds to the coating solution supply unit in the present invention.

  As shown in FIG. 9, a supply pipe 77 communicating with a resist solution supply source 76 is connected to the resist solution nozzle 73. The resist solution supply source 76 in the present embodiment stores a low-viscosity resist solution for forming a thin resist film, for example, a resist film of 150 nm or less. The supply pipe 77 is provided with a valve 78. By opening and closing the valve 78, the discharge of the resist solution can be turned on and off.

  The second arm 72 supports a solvent nozzle 80 that discharges the solvent of the resist solution. The second arm 72 is movable on the rail 70 by, for example, a nozzle drive unit 81 shown in FIG. 10, and the solvent nozzle 80 is moved from a standby unit 82 provided on the outer side of the cup 63 on the Y direction negative direction side. The wafer can be moved to substantially the center of the wafer W in the cup 63. Further, the second arm 72 can be moved up and down by the nozzle driving portion 81, and the height of the solvent nozzle 80 can be adjusted.

  As shown in FIG. 9, a supply pipe 84 that communicates with a solvent supply source 83 is connected to the solvent nozzle 80. In the above configuration, the resist solution nozzle 73 that discharges the resist solution and the solvent nozzle 80 that discharges the solvent are supported by separate arms. However, the resist solution nozzle 73 and the solvent nozzle 80 may be provided to be supported by the same arm, and the movement and discharge timing of the resist solution nozzle 73 and the solvent nozzle 80 are controlled by controlling the movement of the arm. Also good.

  Further, the solvent nozzle 80 supplies an rinsing liquid to the surface of the peripheral portion of the wafer W held by the spin chuck 61, thereby performing an edge rinsing process for selectively removing the coating film at the position where the rinsing liquid is supplied. It is also for.

  The solvent nozzle 80 corresponds to the rinse liquid supply unit in the present invention, and the nozzle drive unit 81 corresponds to the moving unit in the present invention.

  FIG. 11 is a configuration diagram showing the control unit 9 together with the transfer arm A3 and the coating module 23 in the third block (COT layer) B3. In FIG. 11, illustration of the resist solution nozzle 73 and the solvent nozzle 80 of the coating module 23 is omitted.

  The control unit 9 includes an arithmetic processing unit 91, a storage unit 92, a display unit 93, and an alarm generation unit 94.

  The arithmetic processing unit 91 is a computer that is a data processing unit having, for example, a memory and a CPU (Central Processing Unit). The arithmetic processing unit 91 reads a program recorded in the storage unit 92 and sends a control signal to each unit of the resist pattern forming apparatus in accordance with a command (command) included in the program, thereby various substrates included in the resist pattern forming process. Execute the process. The arithmetic processing unit 91 reads a program recorded in the storage unit 92 and sends a control signal to each of the motors M1 to M5 of the transfer arm A3 according to an instruction (command) included in the program, Perform transport.

  The storage unit 92 is a computer-readable recording medium that records a program for causing the arithmetic processing unit 91 to execute various processes. As the recording medium, for example, a flexible disk, a compact disk, a hard disk, a magneto-optical (MO) disk, or the like can be used.

  The display unit 93 is composed of a computer screen, for example. The display unit 93 can select various substrate processes and input parameters for each substrate process.

  The alarm generation unit 94 generates an alarm when an abnormality occurs in each part of the resist pattern forming apparatus including the transfer arm A3.

  Further, as described above, the arithmetic processing unit 91 is connected to the advancing / retreating mechanisms 33A and 33B of the transfer arm A3, the base 31, the lift 34, the motors M1 to M5 provided in the rotating mechanism 32, the encoder 38, the counter 39, and the like. On the other hand, a predetermined control signal is sent and controlled. The storage unit 92 includes a program for executing the substrate processing method according to the present embodiment.

  Next, a resist coating process performed by the coating module 23 will be described. The resist coating process corresponds to the substrate processing method in the present invention.

  FIG. 12 is a diagram illustrating a state of the coating module 23 and the transfer arm A3 when the wafer W is delivered.

  As shown in FIG. 12A, when the wafer W is transferred in advance by the fork 3A of the transfer arm A3, the position of the peripheral portion of the wafer W is detected by the linear image sensor 52 provided in the transfer arm A3. Then, based on the detected position, the position of the solvent nozzle 80 when supplying the rinse liquid to the surface of the peripheral portion is determined in advance. In addition, the state shown to Fig.12 (a) is the same as the state shown to Fig.15 (a) mentioned later.

  When the fork 3A is retracted while holding the wafer W, light is emitted from below to above by the light source 51 provided below the fork 3A. The emitted light is received by the linear image sensor 52 provided above the fork 3A. When the received linear image sensor 52 is a CCD line sensor in which CCDs are linearly arranged along the radial direction of the wafer W, the received pixels and the received pixels are detected based on the detection values of the respective CCDs. The position of the boundary with the pixel that does not receive light can be determined. Based on the determined boundary position, the position of the peripheral portion of the wafer W can be measured.

  FIG. 13 is a graph schematically showing the relationship between the pixel number of the linear image sensor 52 and the amount of received light.

  As shown in FIG. 13, a detection value (hereinafter referred to as “light reception amount”) of a pixel that does not receive light emitted from the light source 51 is a first value n1, and light emitted from the light source 51 is received. The amount of light received by the pixel is a second value n2. At this time, the position of the peripheral portion of the wafer W can be detected as a position E where the amount of light received by each pixel changes between the first value n1 and the second value. When the received light amount is processed as 8-bit data, the first value n1 can be set to 0, for example, and the second value n2 can be set to a predetermined value of 255 or less, for example.

  As described above, various light sources can be used as the light source 51 instead of the LED, and various light receiving elements can be used as the light receiving element of the linear image sensor 52 instead of the CCD.

  FIG. 14 is a plan view showing the linear image sensor 52 and the wafer W when the position of the peripheral portion of the wafer W is detected by the linear image sensor 52.

  As shown in FIG. 14, the angles formed by the extending directions of the four linear image sensors 52A to 52D and the Y axis are θ1, θ2, θ3, and θ4.

  The positions of the peripheral portions of the wafer W on the linear image sensor 52 when the wafer W held on the fork 3A is not displaced are defined as a point, b point, c point, and d point, respectively. Further, the positions of the peripheral portions of the wafer W on the linear image sensor 52 when the wafer W held on the fork 3A is displaced are a ′ point, b ′ point, c ′ point, and d ′ point, respectively. .

In each linear image sensor 52, the distances between the points a, b, c, and d and the points a ′, b ′, c ′, and d ′ are Δa, Δb, Δc, and Δd. At this time, Δa, Δb, Δc, Δd are
Δa [mm] = {(number of pixels at point a ′) − (number of pixels at point a)} × pixel interval [mm] (1)
Δb [mm] = {(number of pixels at point b ′) − (number of pixels at point b)} × pixel interval [mm] (2)
Δc [mm] = {(number of pixels at point c ′) − (number of pixels at point c)} × pixel interval [mm] (3)
Δd [mm] = {(number of pixels at point d ′) − (number of pixels at point d)} × pixel interval [mm] (4)
Note that the number of pixels at point a means the number of pixels from the start point to point a on the center side of the wafer W of the linear image sensor 52.

  Then, the coordinates of the points a to d and the points a ′ to d ′ are expressed as follows.

Point a (X1, Y1) = (X-Rsin θ1, Y-Rcos θ1) (5)
a ′ point (X1 ′, Y1 ′) = (X1−Δasinθ1, Y1−Δacosθ1)
= (X− (R + Δa) sin θ1, Y− (R + Δa) cos θ1) (6)
b point (X2, Y2) = (X−Rsin θ2, Y + R cos θ2) (7)
b ′ point (X2 ′, Y2 ′) = (X2−Δbsinθ2, Y2 + Δbcosθ2)
= (X− (R + Δb) sin θ2, Y + (R + Δb) cos θ2) (8)
c point (X3, Y3) = (X + Rsinθ3, Y + Rcosθ3) (9)
c ′ point (X3 ′, Y3 ′) = (X3 + Δcsinθ3, Y3 + Δccosθ3)
= (X + (R + Δc) sinθ3, Y + (R + Δc) cosθ3) (10)
d point (X4, Y4) = (X + Rsinθ4, Y−Rcosθ4) (11)
d ′ point (X4 ′, Y4 ′) = (X4 + Δdsin θ4, Y4−Δdcos θ4)
= (X + (R + Δd) sin θ4, Y− (R + Δd) cos θ4) (12)
Therefore, the points a ′ (X1 ′, Y1 ′), b ′ points (X2 ′, Y2 ′), c ′ points (X3) are obtained by the equations (6), (8), (10), and (12). ′, Y3 ′) and d ′ points (X4 ′, Y4 ′) can be obtained.

  Next, the coordinates (X ′, Y ′) of the center position o ′ of the wafer W at a position shifted from any three of the points a ′, b ′, c ′, and d ′ are calculated.

  For example, the coordinates (X ′) of the center position o ′ at the shifted position from the three points a ′ (X1 ′, Y1 ′), b ′ (X2 ′, Y2 ′), and c ′ (X3 ′, Y3 ′). , Y ′) is calculated using the following formula (13):

及び下記式（１４）

And the following formula (14)

に示される。

Shown in

  Further, the radius R ′ includes the coordinates (X ′, Y ′) of the center position o ′, the points a ′ (X1 ′, Y1 ′), the points b ′ (X2 ′, Y2 ′), the points c ′ (X3 ′, From each coordinate of Y3 '), the following formula (15)

により求められる。すなわち、リニアイメージセンサ５２により検出したウェハＷの周辺部の位置に基づいて、ウェハＷの外径（半径Ｒ´の２倍）が算出される。

Is required. That is, the outer diameter of the wafer W (twice the radius R ′) is calculated based on the position of the peripheral portion of the wafer W detected by the linear image sensor 52.

  Also, among the a ′ point, b ′ point, c ′ point, and d ′ point, a combination of three points different from the above-mentioned three points (a ′ point, b ′ point, c ′ point), for example, (a ′ point, b 'point, d' point), (a 'point, c' point, d 'point), (b' point, c 'point, d' point) are extracted, and the center position corresponding to the three points The coordinates (X ′, Y ′) of o ′ and the radius R ′ are calculated in advance.

  Next, it is determined whether any of the four linear image sensors 52 </ b> A to 52 </ b> D has detected a portion (notch portion) WN provided with a notch in the peripheral portion of the wafer W. About the coordinates (X ', Y') and radius R 'of the center position o' calculated corresponding to the combination of any three of the points a ', b', c ', d' Make a decision.

  First, it is determined whether the radius R ′ corresponding to any combination of the three points is substantially equal to R, which is a known radius of the wafer W.

  As shown in FIG. 14, when the notch (notch) WN of the wafer W is not near any of the points a ′, b ′, c ′, and d ′ in the plan view, the point a ′. , B ′ point, c ′ point, and d ′ point, the radius R ′ calculated corresponding to the combination of any three points is also substantially equal to the radius R. At this time, it is determined that none of the four linear image sensors 52A to 52D has detected the notch WN of the wafer W.

  At this time, the detection values of any three of the linear image sensors 52A to 52D may be selected.

  When the notch (notch) WN of the wafer W is in the vicinity of any of the points a ′, b ′, c ′, and d ′ in plan view, the four linear image sensors 52A to 52A˜ Of the 52D, three linear image sensors 52 other than the linear image sensor 52 that detected the notch WN of the wafer W are selected. Based on the detected values of the three selected linear image sensors 52, the position of the peripheral portion of the wafer W is detected.

  Alternatively, when any one of the four linear image sensors 52A to 52D detects the notch WN of the wafer W, the fork 3A is slightly forward of the linear image sensors 52A to 52D. Move. This is a movement for preventing the linear image sensors 52A to 52D from detecting the notch WN. Then, the position of the peripheral portion of the wafer W held by the moved fork 3A may be detected again, and the position of the peripheral portion of the wafer W may be detected based on the detected redetection value.

At this time, the shift amount (ΔX, ΔY) between the calculated coordinates (X ′, Y ′) of the center position o ′ and the coordinates o (X, Y) of the wafer W at the reference position o is
ΔX [mm] = X′−X (16)
ΔY [mm] = Y′−Y (17)
Calculated by

  And it correct | amends to the delivery position of the wafer W of the application | coating module 23 so that the calculated center position o 'may become the reference | standard position o.

  Next, the wafer W is transferred by the fork 3A of the transfer arm A3 to just above the spin chuck 61 of the coating module 23 (FIG. 12B). Next, the wafer W is received by the spin chuck 61 lifted by a lift driving means (not shown) made of, for example, an air cylinder, and is vacuum-sucked (FIG. 12C). Next, in a state where the spin chuck 61 is raised, the transport arm A3 moves the fork 3A backward from the coating module 23 (FIG. 12D). Next, the delivery of the wafer W to the coating module 23 is completed by lowering the spin chuck 61 by a lift driving means (not shown) (FIG. 12E).

  FIG. 15 is a diagram illustrating the state of the surface of the wafer W in each process performed using the coating module 23.

  As shown in FIG. 15A, FIG. 15A shows that when the wafer W is transferred by the fork 3A of the transfer arm A3 in advance, the linear image sensor 52 provided on the transfer arm A3 allows the wafer to be transferred. The state at the time of detecting the position of the peripheral part of W is shown. At this time, it is assumed that the outer diameter of the wafer W is D + ΔD, which is ΔD changed with respect to the reference value D.

  In a state where such a wafer W is vacuum-sucked to the spin chuck 61, the chuck W driving mechanism 62 rotates the wafer W at a rotational speed of 0 to 2000 rpm, more preferably 1000 rpm. Then, in a state where the wafer W is rotated, for example, by supplying a prewetting liquid made of, for example, thinner to the approximate center of the wafer W by the solvent nozzle 80 for 0.1 seconds, for example, the wafer W is diffused to the outer peripheral side in the radial direction. Then, a pre-wet treatment is performed to make the surface of the wafer W wet with a solvent.

  Next, in a state where the wafer W is vacuum-sucked on the spin chuck 61, the chuck W driving mechanism 62 rotates the wafer W at a rotational speed of 2000 to 4000 rpm, more preferably 2500 rpm. Then, in a state where the wafer W is rotated, for example, the resist solution PR is supplied onto the substantial center of the wafer W by the resist solution nozzle 73 for 1.5 seconds (see FIG. 15B). Next, in a state where the supply of the resist solution PR is stopped, the shape of the resist solution PR is adjusted by rotating the wafer W at a rotation speed of 50 to 2000 rpm, more preferably 100 rpm, for example, for 1.0 second. Next, by rotating the wafer W at 1000 to 4000 rpm, more preferably 1500 rpm, for example, for 2.5 seconds, the resist solution PR is spread and applied to the outer peripheral side in the radial direction of the wafer W, and the wafer W is coated on the wafer W. The resist solution PR is shaken off and dried to form a resist film PR (see FIG. 15C).

  Next, in a state where the wafer W having the resist film PR formed on the surface is vacuum-sucked by the spin chuck 61, the chuck W driving mechanism 62 rotates the wafer W at a rotation speed of 10 to 100 rpm, more preferably 50 rpm. Then, the solvent nozzle 80 is moved to a predetermined position by the nozzle driving unit 81. In this state, a rinse liquid R made of thinner, for example, is supplied to the surface of the peripheral portion of the wafer W by the solvent nozzle 80. Then, by supplying the rinse liquid R, the resist film PR at the position where the rinse liquid R is supplied is selectively removed (see FIG. 15D).

  Here, when the outer diameter of the wafer W is the reference value D, the predetermined position of the solvent nozzle 80 such that the resist film PR in the region of the predetermined width WE is selectively removed from the outer edge of the wafer W is spin. It is assumed that the position is Y1 in the Y direction from the rotation center of the chuck 61. Then, when the outer diameter of the wafer W is D + ΔD changed by ΔD with respect to the reference value D, the predetermined position of the solvent nozzle 80 is determined to be Y1 + ΔD / 2 changed by, for example, ΔD / 2 with respect to the reference position Y1. To do. Then, the solvent nozzle 80 is moved by the nozzle driving unit 81 to the determined predetermined position. Thereby, the resist film PR in the region of the predetermined width WE is selectively removed from the outer edge of the wafer W regardless of the fluctuation of the outer diameter of the wafer W. Therefore, it is not necessary to provide a positioning sensor for each module, and the width dimension from the outer edge of the wafer in the region where the resist film in the peripheral portion is removed can be made constant even when the outer diameter dimension varies for each wafer.

In the present embodiment, a method for calculating the outer diameter of the wafer based on the position of the peripheral portion of the wafer detected by the linear image sensor and determining the position of the solvent nozzle based on the calculated outer diameter will be described. did. However, a calculation formula may be prepared in advance, and the position of the solvent nozzle may be determined directly based on the position of the peripheral portion of the wafer.
(Modification of the first embodiment)
Next, a substrate processing apparatus and a substrate processing method according to a modification of the first embodiment of the present invention will be described.

  The substrate processing apparatus according to the present modification is a substrate according to the first embodiment in that it is a removal module 23 a provided separately from the coating module 23 for removing the resist film from the peripheral portion of the wafer W. Different from the processing device.

  Of the substrate processing system in the present modification, portions other than the removal module 23a can be the same as those of the substrate processing system in the first embodiment, and the description thereof is omitted.

  Next, the structure of the removal module 23a which is a substrate processing apparatus according to this modification will be described. FIG. 16 is a longitudinal sectional view showing an outline of the configuration of the removal module 23a. FIG. 17 is a cross-sectional view schematically showing the configuration of the removal module 23a.

  The removal module 23a is not provided with the resist solution nozzle 73, and is provided with only the solvent nozzle 80. Accordingly, the removal module 23a is different from the coating module 23 in that the arm 71, the resist solution nozzle 73, the nozzle driving unit 74, the standby unit 75, the resist solution supply source 76, the supply pipe 77, and the valve 78 are not provided. .

  On the other hand, the arm 72 supports a solvent nozzle 80 for discharging the solvent of the resist solution. The arm 72 is movable on the rail 70 by, for example, a nozzle driving unit 81 shown in FIG. 17, and the solvent nozzle 80 is moved from the standby unit 82 provided on the outer side of the cup 63 on the negative side in the Y direction into the cup 63. The wafer W can be moved to substantially the center of the wafer W. Further, the arm 72 can be raised and lowered by the nozzle drive unit 81, and the height of the solvent nozzle 80 can be adjusted. As shown in FIG. 16, a supply pipe 84 that communicates with a solvent supply source 83 is connected to the solvent nozzle 80. The solvent nozzle 80 is for performing an edge rinsing process for selectively removing the coating film at the position where the rinsing liquid is supplied by supplying the rinsing liquid to the peripheral portion of the wafer W held by the spin chuck 61. is there. Other parts including the spin chuck 61 and the chuck driving mechanism 62 other than the above-described parts are the same as those of the coating module 23 and will not be described.

  Moreover, the removal module 23a should just be provided in the some place of a resist pattern formation apparatus, for example, can be provided adjacent to each process module in 3rd block (COT layer) B3.

  The spin chuck 61 corresponds to the substrate holding portion in the present invention, and the chuck drive mechanism 62 corresponds to the rotating portion in the present invention. The solvent nozzle 80 corresponds to the rinse liquid supply unit in the present invention, and the nozzle driving unit 81 corresponds to the moving unit in the present invention.

  Even in the resist coating process performed in the coating module 23 and the removal module 23a in this modification, when the wafer W is transported by the fork 3A of the transport arm A3 in advance, the linear image sensor 52 provided in the transport arm A3 The position of the peripheral portion of the wafer W is detected (see FIG. 15A). Then, based on the detected position, the position of the solvent nozzle 80 when supplying the rinse liquid to the surface of the peripheral portion is determined in advance.

  Then, a pre-wet process is performed in a state where the wafer W is vacuum-sucked by the spin chuck 61 of the coating module 23. Next, the resist solution PR is supplied from the resist solution nozzle 73 onto the substantial center of the wafer W while the wafer W is rotated. Thus, the resist solution PR is applied while diffusing to the outer peripheral side in the radial direction of the wafer W, and the resist solution PR on the wafer W is shaken off and dried to form a resist film PR (FIG. 15B and FIG. 15). c)). The process up to this point is the same as in the first embodiment.

  On the other hand, in the present modification, thereafter, the wafer W on which the resist film PR is formed is received from the coating module 23 by the fork 3A of the transfer arm A3. Next, the wafer W received by the fork 3A is delivered by vacuum suction to the spin chuck 61 of the removal module 23a. And in the removal module 23a, the solvent nozzle 80 is moved to a predetermined position by the nozzle drive part 81. FIG. In this state, a rinse liquid R made of thinner, for example, is supplied to the surface of the peripheral portion of the rotating wafer W by the solvent nozzle 80. Then, by supplying the rinse liquid R, the resist film PR at the position where the rinse liquid R is supplied is selectively removed (see FIG. 15D).

  Also in this modified example, when the outer diameter of the wafer W is D + ΔD that varies ΔD with respect to the reference value D, the predetermined position of the solvent nozzle 80 becomes Y1 + ΔD / 2 that varies, for example, by ΔD / 2 with respect to the reference position Y1. To be determined. Then, the solvent nozzle 80 is moved by the nozzle driving unit 81 to the determined predetermined position. Thereby, the resist film PR in the region of the predetermined width WE is selectively removed from the outer edge of the wafer W regardless of the fluctuation of the outer diameter of the wafer W. Therefore, it is not necessary to provide a positioning sensor for each module, and the width dimension from the outer edge of the wafer in the region where the resist film in the peripheral portion is removed can be made constant even when the outer diameter dimension varies for each wafer.

In this modification, an example in which the position of the peripheral portion of the wafer is detected by the linear image sensor when the wafer is transported by the transport arm before the coating process is performed by the coating module has been described. However, when the wafer with the resist film formed on the surface is transferred by the transfer arm after the application process is performed by the application module and before the edge rinse process is performed by the removal module, the periphery of the wafer is detected by the linear image sensor. The position of the part may be detected.
(Second Embodiment)
Next, a substrate processing apparatus and a substrate processing method according to the second embodiment of the present invention will be described.

  The substrate processing apparatus according to the present embodiment is different from the substrate processing apparatus according to the first embodiment in that it is a peripheral exposure module for exposing a peripheral portion of a wafer having a resist film formed on the surface thereof. .

  Of the substrate processing system in the present embodiment, the portions other than the peripheral exposure module can be the same as those in the substrate processing system in the first embodiment, and the description thereof is omitted.

  Next, a peripheral exposure module that performs peripheral exposure processing will be described. FIG. 18 is a side view including a partial cross section of the peripheral exposure module 100. FIG. 19A is a perspective view showing a state in which the wafer W is peripherally exposed by the peripheral exposure module 100. FIG.19 (b) is sectional drawing which follows the GG line of Fig.19 (a).

  As described above, the peripheral exposure module 100 performs processing in each module of the third block (COT layer) B3, for example, and performs peripheral exposure by exposing the peripheral portion of the wafer W on which the resist film is formed. Is for. The peripheral exposure module 100 only needs to be provided anywhere in the resist pattern forming apparatus. For example, the peripheral exposure module 100 can be provided adjacent to each processing module in the third block (COT layer) B3.

  The peripheral exposure module 100 includes a casing 101, a transport unit 102, and a peripheral exposure unit 120.

  The transport unit 102 includes a mounting table 103, a rotation driving unit 104, a movement driving unit 105, and an alignment unit 110. The mounting table 103 holds the mounted wafer W, and is provided in a lower space in the casing 101 that covers the outside. The mounting table 103 is made of, for example, a vacuum chuck. The mounting table 103 is rotatably provided and is rotationally driven by a rotational driving unit 104 such as a motor.

  The mounting table 103 corresponds to the substrate holding unit in the present invention, the rotation driving unit 104 corresponds to the rotating unit in the present invention, and the movement driving unit 105 corresponds to the moving unit in the present invention.

  The movement driving unit 105 has a guide rail 107. The guide rail 107 is provided on the bottom surface side of the casing 101 so as to extend from one end side (left side in FIG. 18) of the casing 101 to the other end side (right side in FIG. 18). The mounting table 103 is provided so as to be movable in the X direction along the guide rail 107. The mounting table 103 and the rotation driving unit 104 are driven to move in the ± X direction along the guide rail 107 by rotating a driving motor (not shown) provided in the movement driving unit 105 in a forward and reverse direction.

  The alignment unit 110 is for detecting the position of a notch (notch) of the wafer W on the mounting table 103. The alignment unit 110 includes, for example, a pair of light emitting elements 112 and light receiving elements 113. The alignment unit 110 is mounted on the mounting table 103, and when the held wafer W is disposed at the alignment position P2 on the other end side of the casing 101, the peripheral portion of the wafer W is viewed from above and below the light emitting element 112. And the light receiving element 113. Based on the detection result of the position of the notch portion by the alignment unit 110, the mounting table 103 can be rotated by the rotation driving unit 104 to align the angle of the wafer W.

  At the end on one end side in the casing 101, the transfer arm 114 drives the forks 3A and 3B forward and backward with respect to the mounting table 103, and carries the wafer W into and out of the transfer port 114 (same as 24 in FIG. 4). ) Is provided. A position when the wafer W mounted and held on the mounting table 103 is on one end side of the casing 101, that is, on the transfer port 114 side is defined as a wafer carry-in / out position P1.

  The peripheral exposure unit 120 includes a light emitting unit 121, a light guide member 122, and an irradiation unit 123.

  The light emitting unit 121 includes a light source (not shown) made of, for example, an ultrahigh pressure mercury lamp, and emits light for exposing the wafer W held on the mounting table 103. The light guide member 122 is provided so as to connect the light emitting unit 121 and the irradiation unit 123. The light guide member 122 is made of, for example, an optical fiber having a transparent core material such as quartz, and guides light from the light emitting unit 121 to the irradiation unit 123.

  The irradiation unit 123 has an emission side slit 124 (see FIG. 19A). The light incident on the irradiation unit 123 is guided to the exit-side slit 124 by changing the direction and shape of the light flux through a lens and a mirror (not shown). The emission side slit 124 has a rectangular shape, for example, and adjusts the cross-sectional shape of the light beam when the light is emitted from the irradiation unit 123.

  According to such a peripheral exposure unit 120, as shown in FIG. 19A, the surface of the wafer W on which the light B is emitted from the emission side slit 124 provided in the irradiation unit 123 and the resist film PR is formed. Is uniformly irradiated to a predetermined area A in the peripheral portion of the. In this state, when the wafer W is rotated by the rotation drive unit 104, as shown in FIG. 19B, the surplus resist film RA on the peripheral portion of the surface of the wafer W is irradiated with light B, that is, exposed (peripheral exposure). be able to.

  Even in the resist coating process performed in the coating module 23 and the peripheral exposure module 100 in the present embodiment, when the wafer W is transported by the fork 3A of the transport arm A3 in advance, the linear image sensor 52 provided in the transport arm A3. Thus, the position of the peripheral portion of the wafer W is detected (see FIG. 15A). Then, based on the detected position, the relative position of the irradiation unit 123 with respect to the mounting table 103 when the peripheral portion is exposed is determined.

  Then, a pre-wet process is performed in a state where the wafer W is vacuum-sucked by the spin chuck 61 of the coating module 23. Next, the resist solution PR is supplied from the resist solution nozzle 73 onto the substantial center of the wafer W while the wafer W is rotated. Thus, the resist solution PR is applied while diffusing to the outer peripheral side in the radial direction of the wafer W, and the resist solution PR on the wafer W is shaken off and dried to form a resist film PR (FIG. 15B and FIG. 15). c)). The process up to this point is the same as in the first embodiment.

  On the other hand, in the present embodiment, thereafter, the wafer W on which the resist film PR is formed is received from the coating module 23 by the fork 3A of the transfer arm A3. Next, the wafer W received by the fork 3 </ b> A is transferred to the mounting table 103 of the peripheral exposure module 100. Then, in the peripheral exposure module 100, the mounting table 103 is moved by the movement driving unit 105 so that the determined relative position is obtained. In this state, the light B from the light emitting unit 121 is emitted from the emission side slit 124 provided in the irradiation unit 123. Then, while the irradiation unit 123 uniformly irradiates the predetermined region A on the periphery of the surface of the wafer W with uniform irradiation, the rotation drive unit 104 rotates the wafer W, thereby surplus resist film on the periphery of the surface of the wafer W. The RA is irradiated with light B to perform peripheral exposure (see FIG. 19A).

  FIG. 20 is a diagram illustrating a state of the surface of the wafer W when the peripheral exposure module 100 performs the peripheral exposure.

  As shown in FIG. 20, when the outer diameter of the wafer W is the reference value D, the rotation of the mounting table 103 such that the resist film RA in the region of the predetermined width WE from the outer edge of the wafer W is selectively exposed. The relative position of the center of the exit side slit 124 with respect to the center is assumed to be X1 in the X direction. When the outer diameter of the wafer W is D + ΔD, which is ΔD changed with respect to the reference value D, the relative position of the center of the emission side slit 124 with respect to the rotation center of the mounting table 103 is, for example, ΔD / 2 with respect to the reference position X1. It determines so that it may be changed to X1 + ΔD / 2. And the mounting base 103 is moved by the movement drive part 105 so that it may become the determined relative position. As a result, the resist film PR in the region of the predetermined width WE from the outer edge of the wafer W is selectively exposed regardless of the variation in the outer diameter of the wafer W. Therefore, it is not necessary to provide a positioning sensor for each module, and the width dimension from the outer edge of the wafer W in the region where the resist film is exposed in the peripheral portion of the wafer W is made constant even when the outer diameter dimension varies for each wafer. be able to.

  Instead of the mounting table 103, the irradiation unit 123 may be provided so as to be movable in the X direction, or the irradiation unit 123 provided so as to be movable may be moved in the X direction by a moving unit (not shown). In other words, any one of the mounting table 103 and the irradiation unit 123 only needs to be provided so as to be relatively movable with respect to the other, and either the mounting table 103 or the irradiation unit 123 is placed so that the determined relative position is obtained. Move it.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

23 coating module 23a removal module 3, 3A, 3B fork (holding part)
31 Base 5, 5A-5D Detector 51, 51A-51D Light source 52, 52A-52D Linear image sensor 61 Spin chuck 62 Chuck drive mechanism 73 Resist liquid nozzle 74 Nozzle drive unit 80 Solvent nozzle 81 Nozzle drive unit 9 Control unit 100 Peripheral exposure module 103 Mounting table 104 Rotation drive unit 105 Movement drive unit 110 Alignment unit 120 Peripheral exposure unit 123 Irradiation unit

Claims (19)

By supplying a rinsing liquid to the surface of the peripheral part of the substrate by a rinsing liquid supply unit while holding the circular substrate having a coating film formed on the surface on the substrate holding unit and rotating the substrate holding unit. In the substrate processing method for selectively removing the coating film at the position where the rinse liquid is supplied,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having three or more detection units for detecting the positions of the peripheral portions of the substrate at different positions,
A step of detecting a position of a peripheral portion of the substrate by the detection unit when the holding unit is retreated and holding the substrate;
A step of determining whether any of the detection units has detected a peripheral portion of the substrate and provided with a notch based on a detection value obtained by detecting the position of the peripheral portion by the detection unit. When,
When it is determined that the detection unit has not detected a notch in the peripheral part of the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value, and the obtained center position and the reference position of the holding unit are obtained. Determining the amount of deviation between the center position of the substrate when held, and
When it is determined that one detection unit has detected the portion provided with the notch, the holding unit is moved with respect to the detection unit so that the portion provided with the notch is not detected by the detection unit. And determining the center position of the substrate and the radius of the substrate based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position, A step of obtaining a deviation amount between the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
Determining the position of the rinsing liquid supply unit when supplying the rinsing liquid to the surface of the peripheral part based on the obtained radius of the substrate.   Before supplying the rinse liquid to the surface of the peripheral portion of the substrate, supplying a coating liquid to the substrate held by the substrate holding unit and rotating the substrate to form a coating film on the surface of the substrate The substrate processing method according to claim 1, wherein: Substrate processing in which a circular substrate having a coating film formed on its surface is held by a substrate holder, and the peripheral portion of the substrate is exposed by a peripheral exposure unit while the substrate held by the substrate holder is rotated In the method
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having three or more detection units for detecting the positions of the peripheral portions of the substrate at different positions,
A step of detecting a position of a peripheral portion of the substrate by the detection unit when the holding unit is retreated and holding the substrate;
A step of determining whether any of the detection units has detected a peripheral portion of the substrate and provided with a notch based on a detection value obtained by detecting the position of the peripheral portion by the detection unit. When,
When it is determined that the detection unit has not detected a notch in the peripheral part of the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value, and the obtained center position and the reference position of the holding unit are obtained. Determining the amount of deviation between the center position of the substrate when held, and
When it is determined that one detection unit has detected the portion provided with the notch, the holding unit is moved with respect to the detection unit so that the portion provided with the notch is not detected by the detection unit. And determining the center position of the substrate and the radius of the substrate based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position, A step of obtaining a deviation amount between the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
Determining a relative position of the peripheral exposure portion with respect to the substrate holding portion when exposing the peripheral portion based on the obtained radius of the substrate.   The step of determining whether or not the portion provided with the notch has been detected is obtained by determining the center position of the substrate and the radius of the substrate based on the detection values of the set of three detection units. A step of comparing with a known radius and determining that the part provided with the notch is not detected when both are substantially equal, and determining that the part provided with the notch is detected when both are substantially equal The substrate processing method according to claim 1, wherein the substrate processing method is any one of the following. By supplying a rinsing liquid to the surface of the peripheral part of the substrate by a rinsing liquid supply unit while holding the circular substrate having a coating film formed on the surface on the substrate holding unit and rotating the substrate holding unit. In the substrate processing method for selectively removing the coating film at the position where the rinse liquid is supplied,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having four or more detection units for detecting the position of the peripheral part of the substrate at different positions,
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, Comparing the determined radius with the known radius of the substrate for each set of three detectors;
When it is determined from this comparison result that the detection unit has not detected a notch in the peripheral portion of the substrate, the distance between the obtained center position and the center position of the substrate when held at the reference position of the holding unit A step of determining the amount of deviation,
As a result of the comparison, when it is determined that the detected radius is different from the known radius of the substrate and that one detection unit has detected a notch in the peripheral portion of the substrate, three detections other than the one detection unit are detected. Obtaining the center position of the substrate and the radius of the substrate using the part, and obtaining a deviation amount between the obtained center position and the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
Determining the position of the rinsing liquid supply unit when supplying the rinsing liquid to the surface of the peripheral part based on the obtained radius of the substrate.   Before supplying the rinse liquid to the surface of the peripheral portion of the substrate, supplying a coating liquid to the substrate held by the substrate holding unit and rotating the substrate to form a coating film on the surface of the substrate 6. The substrate processing method according to claim 5, wherein: Substrate processing in which a circular substrate having a coating film formed on its surface is held by a substrate holder, and the peripheral portion of the substrate is exposed by a peripheral exposure unit while the substrate held by the substrate holder is rotated In the method
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds Using a substrate transport unit having four or more detection units for detecting the position of the peripheral part of the substrate at different positions,
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, Comparing the determined radius with the known radius of the substrate for each set of three detectors;
When it is determined from this comparison result that the detection unit has not detected a notch in the peripheral portion of the substrate, the distance between the obtained center position and the center position of the substrate when held at the reference position of the holding unit A step of determining the amount of deviation,
As a result of the comparison, when it is determined that the detected radius is different from the known radius of the substrate and that one detection unit has detected a notch in the peripheral portion of the substrate, three detections other than the one detection unit are detected. Obtaining the center position of the substrate and the radius of the substrate using the part, and obtaining a deviation amount between the obtained center position and the center position of the substrate when held at the reference position of the holding unit;
Correcting the transfer operation of the substrate transfer unit so that the substrate is transferred to the transfer position of the substrate holding unit based on the obtained shift amount of the center position;
Determining a relative position of the peripheral exposure portion with respect to the substrate holding portion when exposing the peripheral portion based on the obtained radius of the substrate.   Each of the detection units is a light receiving unit in which a pair of light sources and a plurality of light receiving elements are arranged so as to sandwich any of the substrates held by the retracted holding unit from above and below. The substrate processing method as described in any one of Claims 1-7 comprised by these.   The substrate processing method according to claim 8, wherein the light receiving unit is a linear image sensor.   A computer-readable recording medium recording a program for causing a computer to execute the substrate processing method according to claim 1. By supplying a rinsing liquid to the surface of the peripheral part of the substrate by a rinsing liquid supply unit while holding the circular substrate having a coating film formed on the surface on the substrate holding unit and rotating the substrate holding unit. In the substrate processing apparatus for selectively removing the coating film at the position where the rinsing liquid is supplied,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having three or more detection units that detect the positions of the peripheral portions of the substrate at different positions;
A moving unit for moving the rinsing liquid supply unit;
A step of detecting a position of a peripheral portion of the substrate by the detection portion when the holding portion is retracted and holding the substrate, and based on a detection value by which the detection portion detects the position of the peripheral portion; Determining whether one of the detection units detects a peripheral portion of the substrate and having a notch, and the detection unit detects a notch in the peripheral portion of the substrate. When it is determined that the center position of the substrate and the radius of the substrate are determined based on the detected value, the center position between the determined center position and the center position of the substrate when held at the reference position of the holding unit is determined. Determining the amount of displacement; and when the one detecting unit determines that the portion provided with the notch is detected, the holding unit is configured so that the portion provided with the notch is not detected by the detecting unit. Moved relative to the detection unit, The center position of the substrate and the radius of the substrate are obtained based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position and the holding unit A step of obtaining a deviation amount between the center position of the substrate when held at the reference position and a delivery position of the substrate holding portion based on the obtained deviation amount of the center position. The step of correcting the transfer operation of the substrate transfer unit and the step of determining the position of the rinse liquid supply unit when supplying the rinse liquid to the surface of the peripheral part based on the obtained radius of the substrate are executed. A substrate processing apparatus comprising: a control unit that outputs a control signal as described above.   A coating liquid supply unit for supplying a coating liquid to the substrate held by the substrate holding unit when the substrate is rotating to form a coating film on the substrate is provided. The substrate processing apparatus according to claim 11. Substrate processing in which a circular substrate having a coating film formed on its surface is held by a substrate holder, and the peripheral portion of the substrate is exposed by a peripheral exposure unit while the substrate held by the substrate holder is rotated In the device
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having three or more detection units that detect the positions of the peripheral portions of the substrate at different positions;
A moving unit that moves one of the substrate holding unit and the peripheral exposure unit with respect to the other;
A step of detecting a position of a peripheral portion of the substrate by the detection portion when the holding portion is retracted and holding the substrate, and based on a detection value by which the detection portion detects the position of the peripheral portion; Determining whether one of the detection units detects a peripheral portion of the substrate and having a notch, and the detection unit detects a notch in the peripheral portion of the substrate. When it is determined that the center position of the substrate and the radius of the substrate are determined based on the detected value, the center position between the determined center position and the center position of the substrate when held at the reference position of the holding unit is determined. Determining the amount of displacement; and when the one detecting unit determines that the portion provided with the notch is detected, the holding unit is configured so that the portion provided with the notch is not detected by the detecting unit. Moved relative to the detection unit, The center position of the substrate and the radius of the substrate are obtained based on the re-detection value obtained by detecting again the position of the peripheral portion of the substrate held by the moved holding unit, and the obtained center position and the holding unit A step of obtaining a deviation amount between the center position of the substrate when held at the reference position and a delivery position of the substrate holding portion based on the obtained deviation amount of the center position. The step of correcting the transfer operation of the substrate transfer unit and the step of determining the relative position of the peripheral exposure unit with respect to the substrate holding unit when exposing the peripheral unit based on the obtained radius of the substrate are performed. A substrate processing apparatus comprising: a control unit that outputs a control signal as described above.   The step of determining whether or not the portion provided with the notch has been detected obtains the center position of the substrate and the radius of the substrate based on the detection values of the set of three detection units, and the obtained radius and the substrate A step of comparing with a known radius and determining that the part provided with the notch is not detected when both are substantially equal, and determining that the part provided with the notch is detected when both are substantially equal The substrate processing apparatus according to claim 11, wherein the substrate processing apparatus is a substrate processing apparatus. By supplying a rinsing liquid to the surface of the peripheral part of the substrate by a rinsing liquid supply unit while holding the circular substrate having a coating film formed on the surface on the substrate holding unit and rotating the substrate holding unit. In the substrate processing apparatus for selectively removing the coating film at the position where the rinsing liquid is supplied,
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having four or more detection units for detecting the positions of the peripheral parts of the substrate at different positions;
A moving unit for moving the rinsing liquid supply unit;
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, A step of comparing the obtained radius and the known radius of the substrate for each set of three detection units, and when the detection unit determines that a notch in the peripheral portion of the substrate is not detected based on the comparison result, obtains The step of calculating the amount of deviation between the center position of the substrate and the center position of the substrate when held at the reference position of the holder, and the result of the comparison is that the calculated radius differs from the known radius of the substrate Accordingly, when it is determined that one detection unit has detected a notch in the peripheral portion of the substrate, the center position of the substrate and the radius of the substrate are obtained using three detection units other than the one detection unit, When held at the center position and the reference position of the holder The step of obtaining the amount of deviation between the center position of the substrate and the step of correcting the carrying operation of the substrate carrying unit so that the substrate is delivered to the delivery position of the substrate holding unit based on the obtained amount of deviation of the center position. A control unit that outputs a control signal to execute a step and a step of determining a position of the rinsing liquid supply unit when supplying the rinsing liquid to the surface of the peripheral part based on the determined radius of the substrate; And a substrate processing apparatus.   A coating liquid supply unit for supplying a coating liquid to the substrate held by the substrate holding unit when the substrate is rotating to form a coating film on the substrate is provided. The substrate processing apparatus according to claim 15. Substrate processing in which a circular substrate having a coating film formed on its surface is held by a substrate holder, and the peripheral portion of the substrate is exposed by a peripheral exposure unit while the substrate held by the substrate holder is rotated In the device
A base, a holding part provided to be movable forward and backward from the base, and holding the back surface of the substrate by holding claws; and when the holding part is retracted and holds the substrate, the holding part holds A substrate transport unit having four or more detection units for detecting the positions of the peripheral parts of the substrate at different positions;
A moving unit that moves one of the substrate holding unit and the peripheral exposure unit with respect to the other;
When the holding unit is retracted and holds the substrate, the center position of the substrate and the radius of the substrate are obtained based on the detection value of the set of three detection units among the four or more detection units, A step of comparing the obtained radius and the known radius of the substrate for each set of three detection units, and when the detection unit determines that a notch in the peripheral portion of the substrate is not detected based on the comparison result, obtains The step of calculating the amount of deviation between the center position of the substrate and the center position of the substrate when held at the reference position of the holder, and the result of the comparison is that the calculated radius differs from the known radius of the substrate Accordingly, when it is determined that one detection unit has detected a notch in the peripheral portion of the substrate, the center position of the substrate and the radius of the substrate are obtained using three detection units other than the one detection unit, When held at the center position and the reference position of the holder The step of obtaining the amount of deviation between the center position of the substrate and the step of correcting the carrying operation of the substrate carrying unit so that the substrate is delivered to the delivery position of the substrate holding unit based on the obtained amount of deviation of the center position. A control unit that outputs a control signal to execute a step and a step of determining a relative position of the peripheral exposure unit with respect to the substrate holding unit when the peripheral unit is exposed based on the obtained radius of the substrate; And a substrate processing apparatus. A plurality of the holding portions are provided so as to overlap vertically,
The detection unit is configured to detect a position of a peripheral portion of the substrate held by the holding unit when any one of the holding units is retracted while holding the substrate. The substrate processing apparatus according to claim 11.   Each of the detection units is a light receiving unit in which a pair of light sources and a plurality of light receiving elements are arranged so as to sandwich any of the substrates held by the retracted holding unit from above and below. The substrate processing apparatus according to claim 11, which is configured by:

Images