JP5593696B2 - Method for manufacturing organic electroluminescence device - Google Patents
Method for manufacturing organic electroluminescence device Download PDFInfo
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- JP5593696B2 JP5593696B2 JP2009540027A JP2009540027A JP5593696B2 JP 5593696 B2 JP5593696 B2 JP 5593696B2 JP 2009540027 A JP2009540027 A JP 2009540027A JP 2009540027 A JP2009540027 A JP 2009540027A JP 5593696 B2 JP5593696 B2 JP 5593696B2
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- organic electroluminescent
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- 238000004519 manufacturing process Methods 0.000 title claims description 68
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- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 19
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- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 150000005359 phenylpyridines Chemical class 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical group C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003214 pyranose derivatives Chemical group 0.000 description 1
- VEPOUCHBIJXQFI-UHFFFAOYSA-N pyrazabole Chemical compound [B-]1N2C=CC=[N+]2[B-][N+]2=CC=CN12 VEPOUCHBIJXQFI-UHFFFAOYSA-N 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 125000003072 pyrazolidinyl group Chemical group 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000001422 pyrrolinyl group Chemical group 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical group O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical group C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 125000001984 thiazolidinyl group Chemical group 0.000 description 1
- 125000002053 thietanyl group Chemical group 0.000 description 1
- 125000001730 thiiranyl group Chemical group 0.000 description 1
- BRNULMACUQOKMR-UHFFFAOYSA-N thiomorpholine Chemical group C1CSCCN1 BRNULMACUQOKMR-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical group O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
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- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
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- C07D471/04—Ortho-condensed systems
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- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
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Description
本発明は、有機エレクトロルミネッセンス素子、表示装置及び照明装置に関する。 The present invention relates to an organic electroluminescence element, a display device, and a lighting device.
従来、発光型の電子ディスプレイデバイスとして、エレクトロルミネッセンスディスプレイ(ELD)がある。ELDの構成要素としては、無機エレクトロルミネッセンス素子や有機エレクトロルミネッセンス素子(以下、有機EL素子ともいう)が挙げられる。無機エレクトロルミネッセンス素子は平面型光源として使用されてきたが、発光素子を駆動させるためには交流の高電圧が必要である。 Conventionally, there is an electroluminescence display (ELD) as a light-emitting electronic display device. Examples of the constituent elements of ELD include inorganic electroluminescent elements and organic electroluminescent elements (hereinafter also referred to as organic EL elements). Inorganic electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements.
一方、有機EL素子は、発光する化合物を含有する発光層を陰極と陽極で挟んだ構成を有し、発光層に電子及び正孔を注入して、再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・燐光)を利用して発光する素子である。電極と電極の間は厚さわずか0.1μm程度であり、なおかつその発光が数V〜数十V程度の比較的低い電圧で発光が可能であり、更に自己発光型であるために視野角に富み、視認性が高く、薄膜型の完全固体素子であるために省スペース、携帯性等の観点から次世代の平面ディスプレイや照明として注目されている。 On the other hand, an organic EL element has a configuration in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode, and injects electrons and holes into the light emitting layer to recombine excitons. It is an element that emits light by utilizing light emission (fluorescence / phosphorescence) when the exciton is deactivated. Between the electrodes, the thickness is only about 0.1 μm, and the light can be emitted at a relatively low voltage of several volts to several tens of volts. Due to its richness, high visibility, and thin-film type complete solid-state device, it is attracting attention as a next-generation flat display and illumination from the viewpoint of space saving and portability.
低消費電力で効率よく高輝度に発光する有機EL素子の開発のため、例えば、特許第3093796号公報には、スチルベン誘導体、ジスチリルアリーレン誘導体又はトリススチリルアリーレン誘導体に、微量の蛍光体をドープし、発光輝度の向上、素子の長寿命化を達成する技術が開示され、特開昭63−264692号公報には、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これに微量の蛍光体をドープした有機発光層を有する素子が開示されており、特開平3−255190号公報には、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これにキナクリドン系色素をドープした有機発光層を有する素子等が知られている。 In order to develop an organic EL device that emits light efficiently and with low power consumption, for example, in Japanese Patent No. 3093796, a stilbene derivative, a distyrylarylene derivative, or a tristyrylarylene derivative is doped with a small amount of phosphor. A technique for improving the luminance of light emission and extending the lifetime of the device is disclosed. Japanese Patent Application Laid-Open No. 63-264692 discloses that 8-hydroxyquinoline aluminum complex is used as a host compound and a small amount of phosphor is doped therein. An element having an organic light emitting layer is disclosed, and Japanese Patent Application Laid-Open No. 3-255190 discloses an element having an organic light emitting layer in which an 8-hydroxyquinoline aluminum complex is used as a host compound and doped with a quinacridone dye. It has been.
しかしながら、上記特許文献に開示されている技術では、励起一重項からの発光を用いる場合、一重項励起子と三重項励起子の生成比が1:3であるため発光性励起種の生成確率が25%であることと、光の取り出し効率が約20%であるため、外部取り出し量子効率(ηext)の限界は5%とされている。 However, in the technique disclosed in the above-mentioned patent document, when the emission from the excited singlet is used, the generation ratio of the singlet exciton and the triplet exciton is 1: 3. Since it is 25% and the light extraction efficiency is about 20%, the limit of the external extraction quantum efficiency (ηext) is set to 5%.
ところが、M.A.Baldo et al.,nature、395巻、151〜154ページ(1998年)により、プリンストン大より、励起三重項からのリン光発光を用いる有機EL素子の報告がされて以来、M.A.Baldo et al.,nature、403巻、17号、750〜753ページ(2000年)、米国特許第6,097,147号明細書により、室温で燐光を示す材料の研究が活発になってきている。 However, M.M. A. Baldo et al. , Nature, 395, 151-154 (1998), since Princeton University reported on an organic EL device using phosphorescence emission from an excited triplet. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), and US Pat. No. 6,097,147, research on materials that exhibit phosphorescence at room temperature has become active.
更に、最近発見されたリン光発光を利用する有機EL素子では、以前の蛍光発光を利用する素子に比べ原理的に約4倍の発光効率が実現可能であることから、その材料開発を初めとし、発光素子の層構成や電極の研究開発が世界中で行われている。例えば、S.Lamansky et al.,J.Am.Chem.Soc.,123巻、4304ページ(2001年)には、多くの化合物がイリジウム錯体系等の重金属錯体を中心に合成検討がなされている。 In addition, recently discovered organic EL devices that use phosphorescence can realize a luminous efficiency that is approximately four times that of previous devices that use fluorescence. Research and development of light-emitting element layer configurations and electrodes are performed all over the world. For example, S.M. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), a number of compounds have been studied for synthesis centering on heavy metal complexes such as iridium complexes.
他方、製造コスト、生産性の点では、有機EL素子の構成は、透明電極と対抗電極に有機層が挟まれただけの単純なものであり、平面ディスプレイの代表である液晶ディスプレイに比べ、部品点数が圧倒的に少ないため、製造コストも低く抑えられるはずであるが、現状では必ずしもそうではなく、性能的にもコスト的にも液晶ディスプレイに大きく水をあけられている。特にコストに対しては、生産性の悪さがその要因と考えられる。 On the other hand, in terms of manufacturing cost and productivity, the structure of the organic EL element is simply a structure in which an organic layer is sandwiched between a transparent electrode and a counter electrode, and compared with a liquid crystal display that is a typical flat display. Since the number of points is overwhelmingly small, the manufacturing cost should be kept low. However, at present, this is not always the case, and the liquid crystal display is largely drained in terms of performance and cost. In particular, in terms of cost, poor productivity is considered as a factor.
現在商品化されている有機ELの殆どが、低分子材料を蒸着して成膜する、いわゆる蒸着法で製造されている。この蒸着法は精製が容易な低分子化合物を有機EL材料として用いることができる(高純度材料が得やすい)こと、更に積層構造を作るのが容易なことから、効率、寿命という面で非常に優れているが、反面、10−4Pa以下という高真空条件下で蒸着を行うため、成膜する装置に制約が加わり、実際には小さい面積の基板にしか適用できず、更に複数層積層するとなると成膜に時間がかかりスループットが低いことが欠点である。特に照明用途や大面積の電子ディスプレイに適用する場合は問題となり、有機EL素子がそのようなアプリケーションに実用されていないひとつの原因となっている。Most of organic EL currently commercialized are manufactured by a so-called vapor deposition method in which a low molecular material is vapor deposited to form a film. In this vapor deposition method, a low-molecular compound that can be easily purified can be used as an organic EL material (high-purity material is easy to obtain), and a laminated structure can be easily formed. Although it is excellent, on the other hand, since vapor deposition is performed under a high vacuum condition of 10 −4 Pa or less, restrictions are imposed on the film forming apparatus, and in practice it can only be applied to a substrate with a small area, and when multiple layers are laminated In this case, the film formation takes time and the throughput is low. In particular, it becomes a problem when applied to lighting applications and large-area electronic displays, and organic EL elements are one of the causes that are not practically used in such applications.
一方、有機化合物層をスピンコート、インクジェット、印刷、スプレーといった湿式法プロセスで製造する塗布法は、常圧で薄膜を作製することができ、更に大面積に均一な膜を作製するのに適している。しかし高い発光効率、長寿命を同時に達成するためには、複数の機能層を積層することが望ましい。塗布法を用いて複数の層を積層するためには下層が上層の塗布液に溶解しないことが条件だが、数十nmオーダーという非常に薄い膜であるがために、難溶性の溶剤を用いて上層を塗布しても下層の膜の溶け出し、又は溶媒によって界面が乱れてしまうという問題が生じる。このような下層材料の上層へのコンタミや界面の乱れは、素子の発光効率の低下や素子寿命の劣化を引き起こすため、改善の必要がある。 On the other hand, the coating method in which the organic compound layer is manufactured by a wet process such as spin coating, ink jet, printing, spraying, etc. can be used to produce a thin film at normal pressure, and is suitable for producing a uniform film over a large area. Yes. However, in order to achieve high luminous efficiency and long life at the same time, it is desirable to stack a plurality of functional layers. In order to laminate a plurality of layers using the coating method, the lower layer is required not to dissolve in the upper layer coating solution, but because it is a very thin film of the order of several tens of nanometers, use a poorly soluble solvent. Even if the upper layer is applied, there arises a problem that the lower layer film dissolves or the interface is disturbed by the solvent. Such contamination to the upper layer of the lower layer material and disturbance of the interface cause a decrease in the light emission efficiency of the element and a deterioration in the element life, and therefore need to be improved.
上記問題を解決するため、例えば高分子材料を用いることが提案されている。しかし一般的に高分子材料は精製が難しく、特に有機エレクトロルミネッセンス素子はごくわずかな不純物が素子の発光寿命を大きく低下させる原因になるため、適用が難しい。 In order to solve the above problems, for example, it has been proposed to use a polymer material. However, in general, polymer materials are difficult to purify, and in particular, organic electroluminescence devices are difficult to apply because very few impurities cause the light emission lifetime of the device to be greatly reduced.
また高分子材料を用いない方法として、低分子材料を用い有機EL素子の構成層を製膜した後に、これを高分子量化するという技術がある。例えば、分子内にビニル基を2つ有する2官能性のトリフェニルアミン誘導体が開示されており、その化合物を用い製膜した後に、紫外線照射により3次元架橋されたポリマーを形成することができる(例えば、特許文献1参照。)。2つ以上のビニル基を有する材料を複数の層に添加する技術が開示され、重合反応についても、陰極を積層する前の有機層製膜時点で紫外線や熱の照射で行う方法(例えば、特許文献2参照。)、リン光ドーパントの末端にビニル基を有する材料と、同様にビニル基を有するコモノマーの混合物にラジカル発生剤であるAIBN(アゾイソブチロニトリル)を添加して製膜時に重合反応を進行させる製造方法(例えば、特許文献3参照。)、また、同一層内の2分子間でディールスアルダー反応を起こさせて架橋させる製造方法(例えば、特許文献4参照。)等が挙げられる。 Further, as a method not using a polymer material, there is a technique of forming a constituent layer of an organic EL element using a low molecular material and then increasing the molecular weight thereof. For example, a bifunctional triphenylamine derivative having two vinyl groups in the molecule is disclosed, and after forming a film using the compound, a three-dimensionally crosslinked polymer can be formed by ultraviolet irradiation ( For example, see Patent Document 1.) A technique for adding a material having two or more vinyl groups to a plurality of layers is disclosed, and a polymerization reaction is also performed by irradiation with ultraviolet rays or heat at the time of forming an organic layer before laminating a cathode (for example, patents) Reference 2)), AIBN (azoisobutyronitrile), which is a radical generator, is added to a mixture of a material having a vinyl group at the end of a phosphorescent dopant and a comonomer having a vinyl group, and polymerized during film formation. Production methods for causing the reaction to proceed (for example, see Patent Document 3), production methods for causing a Diels-Alder reaction between two molecules in the same layer (for example, see Patent Document 4), and the like. .
しかしながら、上記のように、低分子材料を高分子量化(樹脂化)するための紫外線照射や高温での加熱処理は、酸化物の生成や材料の劣化などの原因となり、特に発光層においては素子寿命に悪影響を与えるという問題があった。
本発明はかかる課題に鑑みてなされたものであり、本発明の目的は、高い発光効率を示し、且つ長寿命化した有機EL素子材料、それを用いた有機EL素子、照明装置及び表示装置を提供することにある。 The present invention has been made in view of such problems, and an object of the present invention is to provide an organic EL element material that exhibits high luminous efficiency and has a long lifetime, and an organic EL element, an illumination device, and a display device that use the material. It is to provide.
本発明の上記目的は、下記の構成により達成された。 The above object of the present invention has been achieved by the following constitution.
1.発光層、電子輸送層を有する有機エレクトロルミネッセンス素子の製造方法であって、
下記一般式(1)で表される部分構造を有し、かつ常圧下、25℃におけるiso−ブタノールに対する溶解度が0.05g/L以下である化合物、及び下記一般式(2)で表される金属錯体化合物を含有する前記発光層を形成する工程と、
前記発光層上に、湿式法により前記電子輸送層を形成する工程と、
を有することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
1. Emitting layer, a method of manufacturing an organic electroluminescent device that have a electron-transporting layer,
Has a partial structure represented by the following general formula (1), and under normal pressure, compound solubility is less than 0.05 g / L for put that i so- butanol 25 ° C., and the following general formula (2) Forming the light emitting layer containing the metal complex compound represented ,
Forming the electron transport layer on the light emitting layer by a wet method;
The manufacturing method of the organic electroluminescent element characterized by having .
(一般式(1)中、Arは2価のアリーレン基を表し、YaはO,S,N−Raのいずれかを表し、YbはO,S,N−Rbのいずれかを表し,YaとYbは異なっていても同一でも良い。Ra及びRbは置換基又は結合手を表す。RA及びRBは芳香族炭化水素環基、芳香族複素環基、アルキル基、アルケニル基又はアシルオキシ基を表し、RA及びRBが複数あるとき、それらは互いに異なっていても同一でも良い。Xa1〜Xa8及びXb1〜Xb8はC−Ra1又は窒素原子を表し、Ra1は水素原子、置換基又は結合手を表す。C−Ra1が複数ある場合には、Ra1は各々異なっていても同一でもよい。) (In the general formula (1), Ar represents a divalent arylene group, Ya represents any of O, S, and N-Ra, Yb represents any of O, S, and N-Rb, and Ya and Yb may be different or the same, Ra and Rb each represent a substituent or a bond, and RA and RB each represent an aromatic hydrocarbon ring group, an aromatic heterocyclic group, an alkyl group, an alkenyl group, or an acyloxy group , when RA and RB have multiple, they are .Xa 1 ~Xa 8 and Xb 1 ~Xb 8 may be the same or different from each other represent C-Ra 1 or a nitrogen atom, Ra 1 is hydrogen atom, a substituent or Represents a bond. When there are a plurality of C-Ra 1 , Ra 1 may be different or the same.)
(一般式(2)中、X4 は炭素原子又は窒素原子を表し、かつ、置換基を有する芳香族炭化水素環基又は置換基を有する芳香族複素環基を有する。Yは炭素原子又は窒素原子を表し、Aは6員の芳香族炭化水素環又は芳香族複素環を表す。Bは5員又は6員の芳香族複素環を表す。X1−L1−X2は2座の配位子を表し、X1、X2は各々独立に炭素原子、窒素原子又は酸素原子を表す。L1はX1、X2と共に2座の配位子を形成する原子群を表す。m1は1、2又は3の整数を表し、m2は0、1又は2の整数を表すが、m1+m2は2又は3である。中心金属であるMは元素周期表における8〜10族の金属を表す。)
2.前記一般式(2)が、下記一般式(3)で表されることを特徴とする前記1に記載の有機エレクトロルミネッセンス素子の製造方法。
(In General Formula (2), X 4 represents a carbon atom or a nitrogen atom, and has an aromatic hydrocarbon ring group having a substituent or an aromatic heterocyclic group having a substituent. Y is a carbon atom or nitrogen. Represents an atom, A represents a 6-membered aromatic hydrocarbon ring or aromatic heterocycle, B represents a 5-membered or 6-membered aromatic heterocycle, and X 1 -L 1 -X 2 represents a bidentate arrangement. X 1 and X 2 each independently represents a carbon atom, a nitrogen atom or an oxygen atom, L 1 represents an atomic group which forms a bidentate ligand together with X 1 and X 2 , m1 1 represents an integer of 1, 2 or 3, m2 represents an integer of 0, 1 or 2, but m1 + m2 is 2 or 3. M as a central metal represents a group 8-10 metal in the periodic table. )
2. 2. The method for producing an organic electroluminescent element according to 1 above, wherein the general formula (2) is represented by the following general formula (3).
(一般式(3)中、Zは置換基を有する芳香族炭化水素環基又は置換基を有する芳香族複素環基を表す。Aは6員の芳香族炭化水素環又は芳香族複素環を表す。X1−L1−X2は2座の配位子を表し、X1、X2は各々独立に炭素原子、窒素原子又は酸素原子を表す。L1はX1、X2と共に2座の配位子を形成する原子群を表す。m1は1、2又は3の整数を表し、m2は0、1又は2の整数を表すが、m1+m2は2又は3である。中心金属であるMは元素周期表における8〜10族の金属を表す。)
3.前記一般式(3)のAがベンゼン環を表すことを特徴とする前記2に記載の有機エレクトロルミネッセンス素子の製造方法。
(In the general formula (3), Z is an aromatic hydrocarbon ring group or table to an aromatic heterocyclic group having a substituent. A is a 6-membered aromatic hydrocarbon ring or aromatic heterocyclic ring having a substituent X 1 -L 1 -X 2 represents a bidentate ligand, X 1 and X 2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom, and L 1 represents 2 together with X 1 and X 2. Represents an atomic group forming a ligand of a locus, m1 represents an integer of 1, 2 or 3, m2 represents an integer of 0, 1 or 2, and m1 + m2 is 2 or 3. A central metal. M represents a metal of group 8 to 10 in the periodic table.)
3. 3. The method for producing an organic electroluminescent element according to 2, wherein A in the general formula (3) represents a benzene ring.
4.前記一般式(3)で表される金属錯体化合物が同一の配位子のみで構成されることを特徴とする前記2又は3に記載の有機エレクトロルミネッセンス素子の製造方法。 4). 4. The method for producing an organic electroluminescent element according to 2 or 3 , wherein the metal complex compound represented by the general formula (3) is composed of only the same ligand.
5.前記一般式(3)のMがイリジウム又はプラチナであることを特徴とする前記2〜4のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 5. M of the said General formula (3) is iridium or platinum, The manufacturing method of the organic electroluminescent element of any one of said 2-4 characterized by the above-mentioned.
6.前記一般式(1)で表される部分構造を有する化合物の分子量が、700〜3000であることを特徴とする前記1〜5のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 6). 6. The method for producing an organic electroluminescent element according to any one of 1 to 5, wherein the compound having a partial structure represented by the general formula (1) has a molecular weight of 700 to 3000.
7.前記一般式(1)におけるArが、下記一般式(4)で表されることを特徴とする前記1〜6のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 7). Ar in said General formula (1) is represented by following General formula (4), The manufacturing method of the organic electroluminescent element of any one of said 1-6 characterized by the above-mentioned.
(一般式(4)中、YcはO,S,N−Rcのいずれかを表し、Rcは置換基を表す。Xc1〜Xc8は炭素原子又は窒素原子を表し、各々異なっていても同一でも良い。Xc1〜Xc8のいずれかが炭素原子である場合、その炭素原子に結合しているRc1〜Rc8は水素原子又は置換基を表す。Xc1〜Xc8のいずれかが窒素原子である場合、その窒素原子に結合しているRc1〜Rc8はそれぞれ非共有電子対を表す。また、Rc及びRc1〜Rc8のうち少なくとも2つは連結に用いられる。)
8.前記一般式(4)におけるXc1〜Xc8が全て炭素原子であることを特徴とする前記7に記載の有機エレクトロルミネッセンス素子の製造方法。
(In the general formula (4), Yc represents O, S, one of the N-Rc, Rc is .Xc 1 Xc 8 representing a substituent represents a carbon atom or a nitrogen atom, the same even if different from each other When any of Xc 1 to Xc 8 is a carbon atom, Rc 1 to Rc 8 bonded to the carbon atom represents a hydrogen atom or a substituent, and any of Xc 1 to Xc 8 is nitrogen. In the case of an atom, Rc 1 to Rc 8 bonded to the nitrogen atom each represent an unshared electron pair, and at least two of Rc and Rc 1 to Rc 8 are used for connection.)
8). 8. The method for producing an organic electroluminescence element as described in 7 above, wherein Xc 1 to Xc 8 in the general formula (4) are all carbon atoms.
9.YcがO又はN−Rcであることを特徴とする前記7又は8に記載の有機エレクトロルミネッセンス素子の製造方法。 9. Yc is O or N-Rc, The manufacturing method of the organic electroluminescent element of said 7 or 8 characterized by the above-mentioned.
10.YcがN−Rcであることを特徴とする前記9に記載の有機エレクトロルミネッセンス素子の製造方法。 10. Yc is N-Rc, The manufacturing method of the organic electroluminescent element of said 9 characterized by the above-mentioned.
11.前記一般式(4)におけるRc3とRc6が連結に用いられることを特徴とする前記7〜10のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 11. 11. The method for producing an organic electroluminescence element according to any one of 7 to 10, wherein Rc 3 and Rc 6 in the general formula (4) are used for connection.
12.前記一般式(1)におけるArが、下記一般式(5)で表されることを特徴とする前記1〜6のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 12 Ar in said General formula (1) is represented by following General formula (5), The manufacturing method of the organic electroluminescent element of any one of said 1-6 characterized by the above-mentioned.
(一般式(5)中、Xd1〜Xd6は炭素原子又は窒素原子を表し、各々異なっていても同一でも良い。Xd1〜Xd6のいずれかが炭素原子である場合、その炭素原子に結合しているRd1〜Rd6は水素原子又は置換基を表す。Xd1〜Xd6のいずれかが窒素原子である場合、その窒素原子に結合しているRd1〜Rd6はそれぞれ非共有電子対を表す。また、Rd1〜Rd6のうち少なくとも2つは連結に用いられる。)
13.前記一般式(5)におけるXd1〜Xd6が全て炭素原子であることを特徴とする前記12に記載の有機エレクトロルミネッセンス素子の製造方法。
(In General Formula (5), Xd 1 to Xd 6 represent a carbon atom or a nitrogen atom, and may be different or the same. When any of Xd 1 to Xd 6 is a carbon atom, Rd 1 to Rd 6 bonded to each other represent a hydrogen atom or a substituent, and when any of Xd 1 to Xd 6 is a nitrogen atom, Rd 1 to Rd 6 bonded to the nitrogen atom are each not shared. Represents an electron pair, and at least two of Rd 1 to Rd 6 are used for connection.)
13. 13. The method for producing an organic electroluminescent element as described in 12 above, wherein Xd 1 to Xd 6 in the general formula (5) are all carbon atoms.
14.前記一般式(5)におけるRd1とRd3が連結に用いられることを特徴とする前記12又は13に記載の有機エレクトロルミネッセンス素子の製造方法。 14 14. The method for producing an organic electroluminescent element as described in 12 or 13, wherein Rd 1 and Rd 3 in the general formula (5) are used for connection.
15.前記一般式(1)におけるYaがN−Raを表すことを特徴とする前記1〜14のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 15. Ya in said General formula (1) represents N-Ra, The manufacturing method of the organic electroluminescent element of any one of said 1-14 characterized by the above-mentioned.
16.前記一般式(1)におけるRaがArとの連結に用いられることを特徴とする前記15に記載の有機エレクトロルミネッセンス素子の製造方法。
17.前記電子輸送層を形成する工程では、電子輸送材料をアルコール類を含む溶剤に溶解した溶液を塗布することを特徴とする前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。
16. 16. The method for producing an organic electroluminescent element as described in 15 above, wherein Ra in the general formula (1) is used for connection with Ar.
17. The method for producing an organic electroluminescent element according to any one of 1 to 16, wherein in the step of forming the electron transport layer, a solution in which an electron transport material is dissolved in a solvent containing alcohols is applied. .
18.前記電子輸送層を形成する工程では、電子輸送材料をn−ブタノールに溶解した溶液を塗布することを特徴とする前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 18 . Wherein in the step of forming the electron-transporting layer, a method of manufacturing an organic electroluminescent device according to any one of the 1 to 16, characterized by applying a solution of an electron-transporting material in n- butanol.
19.前記電子輸送層を形成する工程では、電子輸送材料をiso−ブタノールに溶解した溶液を塗布することを特徴とする前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 19 . Wherein in the step of forming the electron-transporting layer, a method of manufacturing an organic electroluminescent device according to any one of the 1 to 16, characterized by applying a solution of an electron-transporting material in iso- butanol.
20.前記発光層を形成する工程では、発光層を湿式法で形成することを特徴とする前記1〜19のいずれか1項に記載の有機エレクトロルミネッセンス素子の製造方法。 20 . Wherein in the step of forming the light emitting layer, a method of manufacturing an organic electroluminescent device according to any one of the 1 to 19, characterized in that to form the light-emitting layer by a wet method.
本発明により、高い発光効率を示し、且つ発光寿命が長い有機EL素子、該有機EL素子を用いた照明装置、及び表示装置を提供することができる。 According to the present invention, it is possible to provide an organic EL element that exhibits high light emission efficiency and has a long light emission lifetime, an illumination device using the organic EL element, and a display device.
101 ガラス基板
102 ITO透明電極
103 隔壁
104 正孔注入層
105B、105G、105R 発光層
207 透明電極付きガラス基板
206 有機EL層
205 陰極
202 ガラスカバー
208 窒素ガス
209 捕水剤DESCRIPTION OF SYMBOLS 101 Glass substrate 102 ITO transparent electrode 103 Partition 104 Hole injection layer 105B, 105G, 105R Light emitting layer 207 Glass substrate with a transparent electrode 206 Organic EL layer 205 Cathode 202 Glass cover 208 Nitrogen gas 209 Water capturing agent
以下、本発明に係る各構成要素の詳細について、順次説明する。 Hereinafter, details of each component according to the present invention will be sequentially described.
まず、本発明における一般式(1)で表される部分構造を有する化合物について説明する。 First, the compound which has a partial structure represented by General formula (1) in this invention is demonstrated.
湿式法で有機化合物層を積層する手段の1つとして、上層と下層に用いる溶剤に対する溶解度の差(Sp値の差)を利用する方法がある。例えばトルエン等の極性の低い溶剤に対する溶解性は高く、メタノール等の極性の高い溶剤に対する溶解性は低い材料を下層に用いることにより、上層を極性の高い溶剤で製膜することが可能である。 As one of means for laminating the organic compound layer by a wet method, there is a method of using a difference in solubility (Sp value difference) with respect to a solvent used for the upper layer and the lower layer. For example, the upper layer can be formed with a highly polar solvent by using, as the lower layer, a material having a high solubility in a low polarity solvent such as toluene and a low solubility in a highly polar solvent such as methanol.
しかし、極性が高い溶剤の代表であるメタノールやエタノールは沸点が低いために、成膜時の乾燥条件の制御が難しく膜厚のバラつきが発生しやすいという問題がある。また、極性が非常に高い溶剤は水分を含みやすいため、薄膜内に水が残存し素子寿命の劣化を引き起こす一因となる。 However, methanol and ethanol, which are representative of highly polar solvents, have a low boiling point, and thus there is a problem that it is difficult to control the drying conditions at the time of film formation and the film thickness tends to vary. In addition, since a solvent having a very high polarity is likely to contain moisture, water remains in the thin film, which causes a deterioration in device life.
一方で炭素数の大きいヘキサノール等では、下層材料とのSp値の差が近づくため下層材料の溶け出しやすくなるという問題が生じる。また同時に沸点も高くなるため、成膜性は向上するが溶剤を完全に除去することが困難になる。 On the other hand, with hexanol or the like having a large number of carbon atoms, the difference in the Sp value with the lower layer material approaches, which causes a problem that the lower layer material is easily dissolved. At the same time, since the boiling point is increased, the film formability is improved, but it is difficult to completely remove the solvent.
以上のような問題を鑑みるに、上層に用いる溶剤としては成膜性がよく、かつ適度な極性を持つ溶剤が好ましく、1−ブタノールは要件を満たす好適な溶剤である。 In view of the above problems, the solvent used for the upper layer is preferably a solvent having good film formability and appropriate polarity, and 1-butanol is a suitable solvent that satisfies the requirements.
本発明における一般式(1)で表される部分構造を有する化合物は、常圧下、25度にて、iso−ブタノールに対する溶解度が、0.05g/L以下である。本発明において、一般式(1)で表される部分構造を有する化合物の、iso−ブタノールに対する溶解度の測定方法は、ごく一般的な方法でよく、溶解度測定の一例としては、25℃の環境下、iso−ブタノール100mlに一般式(1)で表される部分構造を有する化合物を5mg加えて、3時間撹拌する。ここで完全に一般式(1)で表される部分構造を有する化合物が溶解したか否かを目視で確認し、判断することができる。ここで使用するiso−ブタノールは、JIS試薬一級以上の純度のものであれば十分使用可能である。 The compound having a partial structure represented by the general formula (1) in the present invention has a solubility in iso-butanol of 0.05 g / L or less at 25 degrees under normal pressure. In the present invention, the method for measuring the solubility of the compound having the partial structure represented by the general formula (1) with respect to iso-butanol may be a very general method. 5 mg of a compound having a partial structure represented by the general formula (1) is added to 100 ml of iso-butanol and stirred for 3 hours. Here, whether or not the compound having the partial structure represented by the general formula (1) is completely dissolved can be visually confirmed and judged. The iso-butanol used here can be sufficiently used as long as it has a purity of JIS reagent first grade or higher.
本発明に係る前記一般式(1)で表される部分構造について、以下説明する。 The partial structure represented by the general formula (1) according to the present invention will be described below.
一般式(1)中、Arは2価のアリーレン基を表し、2価のアリーレン基としては好ましくは、1,3−フェニレン基、1,2−フェニレン基、3,6−カルバゾリレン基、3,8−ジベンゾフリル基を表す。YaはO,S,N−Raのいずれかを表し、YbはO,S,N−Rbのいずれかを表し,YaとYbは異なっていても同一でも良い。Ra及びRbは置換基を表す。RA及びRBは置換基を表し、RA及びRBが複数あるとき、それらは互いに異なっていても同一でも良い。Xa1〜Xa8及びXb1〜Xb8はC−Ra1又は窒素原子を表し、Ra1は水素原子、置換基又は結合手を表す。C−Ra1が複数ある場合には、Ra1は各々異なっていても同一でもよい。In general formula (1), Ar represents a divalent arylene group, and the divalent arylene group is preferably a 1,3-phenylene group, a 1,2-phenylene group, a 3,6-carbazolylene group, 3, It represents an 8-dibenzofuryl group. Ya represents one of O, S, and N-Ra, Yb represents one of O, S, and N-Rb, and Ya and Yb may be different or the same. Ra and Rb represent a substituent. RA and RB represent substituents, and when there are a plurality of RA and RB, they may be different or the same. Xa 1 to Xa 8 and Xb 1 to Xb 8 represent C-Ra 1 or a nitrogen atom, and Ra 1 represents a hydrogen atom, a substituent, or a bond. When there are a plurality of C-Ra 1 s , Ra 1 s may be different or the same.
Ra及びRb、またRA及びRB、またRa1で表される置換基としては、例えば、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素環基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4−トリアゾール−1−イル基、1,2,3−トリアゾール−1−イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2−ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2−エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2−エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2−エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2−ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2−ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2−エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2−ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2−エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基又はヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2−ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2−エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2−ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)等が挙げられる。これらの置換基は上記の置換基によって更に置換されていてもよい。また、これらの置換基は複数が互いに結合して環を形成していてもよい。Examples of the substituent represented by Ra and Rb, RA and RB, and Ra 1 include, for example, an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a pentyl group, and a hexyl group). Octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), cycloalkyl group (eg, cyclopentyl group, cyclohexyl group etc.), alkenyl group (eg, vinyl group, allyl group etc.), alkynyl group (eg, Ethynyl group, propargyl group, etc.), aromatic hydrocarbon ring group (also called aromatic carbocyclic group, aryl group, etc.), for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl Group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group , Pyrenyl group, biphenylyl group, etc.), aromatic heterocyclic group (for example, pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2, 4-triazol-1-yl group, 1,2,3-triazol-1-yl group, etc.), oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group , Benzofuryl group, dibenzofuryl group, benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom) Quinoxalinyl group, pyridazi Group, triazinyl group, quinazolinyl group, phthalazinyl group, etc.), heterocyclic group (eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyl) Oxy group, hexyloxy group, octyloxy group, dodecyloxy group, etc.), cycloalkoxy group (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (For example, methylthio group, ethylthio group, propylthio group, pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (for example, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (for example, Phenylthio group, naphthylthio group, etc.), alkoxycarbonyl group (eg, methyloxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (eg, phenyloxy) Carbonyl group, naphthyloxycarbonyl group, etc.), sulfamoyl group (for example, aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecyl) Aminosulfonyl group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, Ethylcarbonyl group, propylcarbonyl group, pentylcarbonyl group, cyclohexylcarbonyl group, octylcarbonyl group, 2-ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group, naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (for example, acetyl) Oxy group, ethylcarbonyloxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, Propylcarbonylamino group, pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino Group, dodecylcarbonylamino group, phenylcarbonylamino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, aminocarbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexyl). Aminocarbonyl group, octylaminocarbonyl group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido) Group, pentylureido group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group naphthylureido group, 2-pyridylamido Ureido group, etc.), sulfinyl group (for example, methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc. ), Alkylsulfonyl group (for example, methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl group or heteroarylsulfonyl group (for example, phenylsulfonyl group) , Naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.), amino group (for example, amino group, ethylamino group, dimethylamino group, butylamino group, Lopentylamino group, 2-ethylhexylamino group, dodecylamino group, anilino group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (for example, fluorine atom, chlorine atom, bromine atom etc.), fluorinated hydrocarbon group (For example, fluoromethyl group, trifluoromethyl group, pentafluoroethyl group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (for example, trimethylsilyl group, triisopropylsilyl group, trimethyl group) Phenylsilyl group, phenyldiethylsilyl group, etc.). These substituents may be further substituted with the above substituents. In addition, a plurality of these substituents may be bonded to each other to form a ring.
前記一般式(1)で表される部分構造を有する化合物の分子量は、700〜3000であることが、精製が容易且つ高いTgを有する材料が得られることから好ましい。 The molecular weight of the compound having the partial structure represented by the general formula (1) is preferably 700 to 3000, since it is easy to purify and a material having a high Tg is obtained.
前記一般式(1)において、Arは、前記一般式(4)で表されることが好ましい。 In the general formula (1), Ar is preferably represented by the general formula (4).
前記一般式(4)において、YcはO,S,N−Rcのいずれかを表し、Rcは置換基を表す。Xc1〜Xc8は炭素原子又は窒素原子を表し、各々異なっていても同一でも良い。Xc1〜Xc8のいずれかが炭素原子である場合、その炭素原子に結合しているRc1〜Rc8は水素原子又は置換基を表す。Xc1〜Xc8のいずれかが窒素原子である場合、その窒素原子に結合しているRc1〜Rc8はそれぞれ非共有電子対を表す。また、Rc及びRc1〜Rc8のうち少なくとも2つは連結に用いられる。In the said General formula (4), Yc represents either O, S, and N-Rc, and Rc represents a substituent. Xc 1 to Xc 8 represent a carbon atom or a nitrogen atom, and may be different or the same. When any of Xc 1 to Xc 8 is a carbon atom, Rc 1 to Rc 8 bonded to the carbon atom represent a hydrogen atom or a substituent. When any of Xc 1 to Xc 8 is a nitrogen atom, Rc 1 to Rc 8 bonded to the nitrogen atom each represent an unshared electron pair. Further, at least two of Rc and Rc 1 to Rc 8 are used for connection.
また、ここでRc及びRc1〜Rc8で表される置換基としては、前記Ra及びRb、またRA及びRBで表される置換基と同義である。As the substituent here represented by Rc and Rc 1 to Rc 8, wherein Ra and Rb, also the same as the substituents represented by RA and RB.
また、前記一般式(1)におけるArが一般式(4)で表されるとき、一般式(4)においては、Xc1〜Xc8が全て炭素原子であることが好ましい。更に、一般式(4)において、Ycは、O又はN−Rcであることが好ましい。又、YcはN−Rcであることが更に好ましい。Further, when the Ar in the general formula (1) is represented by the general formula (4), in the general formula (4), it is preferable Xc 1 Xc 8 are all carbon atoms. Furthermore, in General formula (4), it is preferable that Yc is O or N-Rc. Yc is more preferably N-Rc.
また、前記一般式(4)においては、Rc3とRc6が連結に用いられることが好ましい。Rc3とRc6が連結に用いられるとは、一般式(4)が、Rc3とRc6の置換位置を結合手とした二価の基を構成することを表す。Further, in the above general formula (4), it is preferable that Rc 3 and Rc 6 is used to join. The phrase “Rc 3 and Rc 6 are used for linking” means that the general formula (4) constitutes a divalent group with the substitution position of Rc 3 and Rc 6 as a bond.
前記一般式(1)におけるArは、また、前記一般式(5)で表されることが好ましい。 Ar in the general formula (1) is preferably represented by the general formula (5).
一般式(5)において、Xd1〜Xd6は炭素原子又は窒素原子を表し、各々異なっていても同一でも良い。Xd1〜Xd6のいずれかが炭素原子である場合、その炭素原子に結合しているRd1〜Rd6は水素原子又は置換基を表す。Xd1〜Xd6のいずれかが窒素原子である場合、その窒素原子に結合しているRd1〜Rd6はそれぞれ非共有電子対を表す。また、Rd1〜Rd6のうち少なくとも2つは連結に用いられる。ここにおいて、Rd1〜Rd6で表される置換基は前記Ra及びRb、またRA及びRBで表される置換基と同義である。In the general formula (5), Xd 1 to Xd 6 represent a carbon atom or a nitrogen atom, and may be different or the same. When any of Xd 1 to Xd 6 is a carbon atom, Rd 1 to Rd 6 bonded to the carbon atom represent a hydrogen atom or a substituent. When any of Xd 1 to Xd 6 is a nitrogen atom, Rd 1 to Rd 6 bonded to the nitrogen atom each represent an unshared electron pair. In addition, at least two of Rd 1 to Rd 6 are used for connection. Here, the substituents represented by Rd 1 to Rd 6 are synonymous with the substituents represented by Ra and Rb, and RA and RB.
また、一般式(5)においては、Xd1〜Xd6が全て炭素原子であることが好ましい形態の1つである。In the general formula (5), it is one preferred form Xd 1 ~Xd 6 are all carbon atoms.
また、前記一般式(1)におけるArが一般式(5)で表されるとき、一般式(5)においては、Rd1とRd3が連結に用いられることが好ましい。Rd1とRd3が連結に用いられるとは、一般式(5)が、Rd1とRd3の置換位置を結合手とした二価の基を構成することを表す。In addition, when Ar in the general formula (1) is represented by the general formula (5), it is preferable that Rd 1 and Rd 3 are used for connection in the general formula (5). The phrase “Rd 1 and Rd 3 are used for linking” means that the general formula (5) constitutes a divalent group with the substitution position of Rd 1 and Rd 3 as a bond.
又、一方、前記一般式(1)におけるYaは、N−Raを表すことが好ましく、更に、RaはArとの連結に用いられることが好ましい。即ち、Raの置換位置においてArと結合することが好ましい。 On the other hand, Ya in the general formula (1) preferably represents N-Ra, and Ra is preferably used for connection with Ar. That is, it is preferably bonded to Ar at the substitution position of Ra.
以下に、代表的な化合物について具体例を挙げる。 Specific examples of typical compounds are given below.
また、以下に本発明に係る一般式(1)で表される化合物の合成の一例を示すが、本発明はこれらに限定されない。 Moreover, although an example of the synthesis | combination of the compound represented by General formula (1) based on this invention below is shown, this invention is not limited to these.
(合成例) (Synthesis example)
カルバゾール13.4g、3−ブロモヨードベンゼン25.0g、炭酸カリウム13.4g、銅(粉末)6.2gにN,N−ジメチルアセトアミド(脱水)90mlを加え、窒素気流下で7時間加熱還流を行った。反応液を室温まで冷却した後、不溶物をろ過し、水を加え、酢酸エチルで抽出した。有機層は水洗を繰り返し、減圧下で濃縮した。得られた混合物をシリカゲルカラムクロマトグラフィーで精製し、中間体1を17g得た。収率は57%であった。得られた中間体1は、核磁気共鳴スペクトル、マススペクトルで構造を確認した。 Add 1 ml of carbazole, 25.0 g of 3-bromoiodobenzene, 13.4 g of potassium carbonate, and 6.2 g of copper (powder) to 90 ml of N, N-dimethylacetamide (dehydrated), and heat to reflux for 7 hours under a nitrogen stream. went. The reaction mixture was cooled to room temperature, insolubles were filtered, water was added, and the mixture was extracted with ethyl acetate. The organic layer was repeatedly washed with water and concentrated under reduced pressure. The resulting mixture was purified by silica gel column chromatography to obtain 17 g of Intermediate 1. The yield was 57%. The structure of the obtained intermediate 1 was confirmed by a nuclear magnetic resonance spectrum and a mass spectrum.
中間体1を20g、ビス(ピナコラト)ジボロン18.9g、酢酸カリウム12.2g、PdCl2(dppf)・CH2Cl2([1,1′−ビス(ジフェニルホスフィノ)フェロセン]パラジウム(II)ジクロリド ジクロロメタン錯体)を1.0gにジメチルスルホキシド300mlを加え、窒素気流下100℃で16時間加熱攪拌した。反応液を室温まで冷却した後、不溶物をろ過し、水を加え、酢酸エチルで抽出した。有機層は水洗を繰り返し、減圧下で濃縮した。得られた混合物をシリカゲルカラムクロマトグラフィーで精製し、中間体2を20.6g得た。収率は90%であった。得られた中間体2は、核磁気共鳴スペクトル、マススペクトルで構造を確認した。20 g of intermediate 1, 18.9 g of bis (pinacolato) diboron, 12.2 g of potassium acetate, PdCl 2 (dppf) · CH 2 Cl 2 ([1,1′-bis (diphenylphosphino) ferrocene] palladium (II) To 1.0 g of dichloride dichloromethane complex), 300 ml of dimethyl sulfoxide was added and stirred with heating at 100 ° C. for 16 hours under a nitrogen stream. The reaction mixture was cooled to room temperature, insolubles were filtered, water was added, and the mixture was extracted with ethyl acetate. The organic layer was repeatedly washed with water and concentrated under reduced pressure. The resulting mixture was purified by silica gel column chromatography to obtain 20.6 g of intermediate 2. The yield was 90%. The structure of the obtained intermediate 2 was confirmed by nuclear magnetic resonance spectrum and mass spectrum.
中間体2を24.6g、中間体3を13.7g、炭酸カリウム23.1g、Pd(dba)2(ビス(ジベンジリデンアセトン)パラジウム)を0.64g、dppf(ジフェニルホスフィノフェロセン)を0.62gに、1,2−ジメトキシエタン550mlと水70mlを加え、5時間加熱還流を行った。反応液を室温まで冷却した後、不溶物をろ過し、水を加え、酢酸エチルで抽出した。有機層は水洗を繰り返し、減圧下で濃縮した。得られた混合物をシリカゲルカラムクロマトグラフィーで精製し、中間体2を16.5g得た。収率は72%であった。得られた中間体4は、核磁気共鳴スペクトル、マススペクトルで構造を確認した。Intermediate 2 24.6 g, Intermediate 3 13.7 g, potassium carbonate 23.1 g, Pd (dba) 2 (bis (dibenzylideneacetone) palladium) 0.64 g, dppf (diphenylphosphinoferrocene) 0 To .62 g, 550 ml of 1,2-dimethoxyethane and 70 ml of water were added and heated under reflux for 5 hours. The reaction mixture was cooled to room temperature, insolubles were filtered, water was added, and the mixture was extracted with ethyl acetate. The organic layer was repeatedly washed with water and concentrated under reduced pressure. The resulting mixture was purified by silica gel column chromatography to obtain 16.5 g of intermediate 2. The yield was 72%. The structure of the obtained intermediate 4 was confirmed by nuclear magnetic resonance spectrum and mass spectrum.
酢酸パラジウム0.29gに、tert−ブチルホスフィンの50g/Lトルエン溶液を2.1gとキシレン(脱水)を10mlを加え、窒素気流下室温で1時間攪拌した。続いて、中間体4を7.5g、1,3−ジヨードベンゼン2.9g、ナトリウムt−ブトキシド2.1g、キシレン(脱水)120mlを加え、窒素気流下にて5時間加熱還流を行った。反応液を室温まで冷却した後、不溶物をろ過し、水を加え、トルエンで抽出した。有機層は水洗を繰り返し、減圧下で濃縮した。得られた混合物をシリカゲルカラムクロマトグラフィーで精製し、更にトルエンで再結晶を行い、例示化合物1−1を5.7g得た。収率は73%であった。得られた例示化合物1−1は、核磁気共鳴スペクトル、マススペクトルで構造を確認した。 To 0.29 g of palladium acetate, 2.1 g of a 50 g / L toluene solution of tert-butylphosphine and 10 ml of xylene (dehydrated) were added and stirred at room temperature for 1 hour under a nitrogen stream. Subsequently, 7.5 g of intermediate 4, 2.9 g of 1,3-diiodobenzene, 2.1 g of sodium t-butoxide, and 120 ml of xylene (dehydrated) were added, and the mixture was heated to reflux for 5 hours under a nitrogen stream. . After cooling the reaction solution to room temperature, insolubles were filtered, water was added, and the mixture was extracted with toluene. The organic layer was repeatedly washed with water and concentrated under reduced pressure. The obtained mixture was purified by silica gel column chromatography, and further recrystallized from toluene to obtain 5.7 g of Exemplified Compound 1-1. The yield was 73%. The obtained exemplary compound 1-1 was confirmed in structure by nuclear magnetic resonance spectrum and mass spectrum.
本発明において、前記一般式(1)で表される部分構造を有する化合物は、後述するが、ホスト化合物として発光層中に含有することが好ましい。 In the present invention, the compound having a partial structure represented by the general formula (1) will be described later, but it is preferably contained in the light emitting layer as a host compound.
次に、本発明における一般式(2)で表される金属錯体について説明する。 Next, the metal complex represented by the general formula (2) in the present invention will be described.
(配位子)
本発明に係る一般式(2)で表される金属錯体においては、m1>m2である場合、m1を有する括弧内に示す部分構造若しくはその互変異性体で表される部分構造を主配位子と称し、m2を有する括弧内に示す部分構造若しくはその互変異性体で表される部分構造を副配位子と称す。(Ligand)
In the metal complex represented by the general formula (2) according to the present invention, when m1> m2, the partial structure shown in parentheses having m1 or the partial structure represented by a tautomer thereof is the main coordination. A partial structure shown in parentheses having m2 or a partial structure represented by a tautomer thereof is called a subligand.
本発明において、該金属錯体は、主配位子若しくはその互変異性体と副配位子若しくはその互変異性体の組み合わせで構成されるか、後述するが、m2=0の場合、即ち該金属錯体の配位子の全てが、主配位子又はその互変異性体で表される部分構造のみで構成されていてもよい。 In the present invention, the metal complex is composed of a combination of a main ligand or a tautomer thereof and a subligand or a tautomer thereof, which will be described later. All of the ligands of the metal complex may be composed of only the partial structure represented by the main ligand or a tautomer thereof.
更に従来公知の金属錯体形成に用いられる、所謂配位子として当該業者が周知の配位子(配位化合物とも言う)を必要に応じて配位子として有していてもよい。 Furthermore, as a so-called ligand used for forming a conventionally known metal complex, the trader may have a known ligand (also referred to as a coordination compound) as a ligand, if necessary.
本発明に記載の効果を好ましく得る観点からは、錯体中の配位子の種類は1〜2種類から構成されることが好ましく、更に好ましくは1種類である。 From the viewpoint of preferably obtaining the effects described in the present invention, the type of ligand in the complex is preferably composed of 1 to 2 types, and more preferably 1 type.
従来公知の金属錯体に用いられる配位子としては、種々の公知の配位子があるが、例えば、「Photochemistry and Photophysics of Coordination Compounds」Springer−Verlag社 H.Yersin著 1987年発行、「有機金属化学−基礎と応用」裳華房社 山本明夫著
1982年発行等に記載の配位子(例えば、ハロゲン配位子(好ましくは塩素配位子))、含窒素ヘテロ環配位子(例えば、ビピリジル、フェナントロリンなど)、ジケトン配位子などが挙げられる。There are various known ligands used in conventionally known metal complexes. For example, “Photochemistry and Photophysics of Coordination Compounds” Springer-Verlag H. Published by Yersin in 1987, “Organometallic Chemistry – Fundamentals and Applications”, published by Akio Yamamoto, Shokabosha Publishing Co., Ltd., published in 1982, etc. (including halogen ligands (preferably chlorine ligands)), including Nitrogen heterocyclic ligands (for example, bipyridyl, phenanthroline, etc.), diketone ligands and the like can be mentioned.
(元素周期表の8〜10族の遷移金属元素)
本発明に係る一般式(2)で表される金属錯体の形成に用いられる金属としては、元素周期表の8〜10族の遷移金属元素(単に遷移金属ともいう)が用いられるが、中でも、イリジウム、白金が好ましい遷移金属元素として挙げられる。更に好ましくは、イリジウムが良い。(Transition metal element of group 8-10 of the periodic table)
As a metal used for forming the metal complex represented by the general formula (2) according to the present invention, a transition metal element of group 8 to 10 of the periodic table (also simply referred to as a transition metal) is used. Iridium and platinum are preferable transition metal elements. More preferably, iridium is good.
一般式(2)において、X4は窒素原子又は炭素原子を表し、Yは炭素原子又は窒素原子を表す。Aは6員の芳香族炭化水素環又は芳香族複素環を形成するのに必要な原子群を表す。In the general formula (2), X 4 represents a nitrogen atom or a carbon atom, and Y represents a carbon atom or a nitrogen atom. A represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or aromatic heterocyclic ring.
6員の芳香族炭化水素環又は芳香族複素環としては、具体的にはベンゼン環、クロロベンゼン環、メシチレン環、トルエン環、キシレン環、ナフタレン環、アントラセン環、アズレン環、アセナフテン環、フルオレン環、フェナントレン環、インデン環、ピレン環、ビフェニール環、ピリジン環、ピリミジン環、ベンズイミダゾール環、ピラジン環、キノリン環、ベンゾフラン環、ジベンゾフラン環、ベンゾチオフェン環、ジベンゾチオフェン環、インドール環、カルバゾール環、カルボリン環、ジアザカルバゾール環(前記カルボリン環のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリン環、ピリダジン環、トリアゾール環、キナゾリン環、フタラジン環等が挙げられ、好ましくはベンゼン環が挙げられる。またこれらの基は、無置換でも更に置換基を有していてもよい。 Specific examples of the 6-membered aromatic hydrocarbon ring or aromatic heterocyclic ring include benzene ring, chlorobenzene ring, mesitylene ring, toluene ring, xylene ring, naphthalene ring, anthracene ring, azulene ring, acenaphthene ring, fluorene ring, Phenanthrene ring, indene ring, pyrene ring, biphenyl ring, pyridine ring, pyrimidine ring, benzimidazole ring, pyrazine ring, quinoline ring, benzofuran ring, dibenzofuran ring, benzothiophene ring, dibenzothiophene ring, indole ring, carbazole ring, carboline ring , A diazacarbazole ring (in which one of the carbon atoms constituting the carboline ring of the carboline ring is replaced by a nitrogen atom), a quinoxaline ring, a pyridazine ring, a triazole ring, a quinazoline ring, a phthalazine ring, and the like. Is the benzene ring And the like. These groups may be unsubstituted or further have a substituent.
更にこれらの芳香族炭化水素環又は芳香族複素環は、例えば、後述の置換基によって置換されていてもよく、更に縮合環を形成してもよい。 Furthermore, these aromatic hydrocarbon rings or aromatic heterocycles may be substituted with, for example, a substituent described later, and may further form a condensed ring.
前記一般式(2)において、Bは5〜6員の含窒素芳香族複素環を形成するのに必要な原子群を表し、5〜6員の含窒素芳香族複素環としては、ピリジン環、ピリミジン環、ピロリン環、イミダゾール環、ベンゾイミダゾール環、ピラゾール環、ピラジン環、トリアゾール環(例えば、1,2,4−トリアゾール−1−イル基、1,2,3−トリアゾール−1−イル基等)、オキサゾール環、ベンゾオキサゾール環、チアゾール環、イソオキサゾール環、イソチアゾール環、フラザン環、イソキノリン環等が挙げられる。好ましくは、イミダゾール環が挙げられる。これらの環は、無置換でも更に置換基を有していてもよい。 In the general formula (2), B represents an atomic group necessary for forming a 5- to 6-membered nitrogen-containing aromatic heterocycle, and the 5- to 6-membered nitrogen-containing aromatic heterocycle includes a pyridine ring, Pyrimidine ring, pyrroline ring, imidazole ring, benzimidazole ring, pyrazole ring, pyrazine ring, triazole ring (for example, 1,2,4-triazol-1-yl group, 1,2,3-triazol-1-yl group, etc.) Oxazole ring, benzoxazole ring, thiazole ring, isoxazole ring, isothiazole ring, furazane ring, isoquinoline ring and the like. Preferably, an imidazole ring is mentioned. These rings may be unsubstituted or may further have a substituent.
置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、t−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素環基(芳香族炭素環基、アリール基等とも言い、例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4−トリアゾール−1−イル基、1,2,3−トリアゾール−1−イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2−ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2−エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2−エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2−エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2−ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2−ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2−エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2−ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2−エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基又はヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2−ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2−エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2−ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)等が挙げられる。 Examples of the substituent include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, t-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), A cycloalkyl group (eg, cyclopentyl group, cyclohexyl group, etc.), an alkenyl group (eg, vinyl group, allyl group, etc.), an alkynyl group (eg, ethynyl group, propargyl group, etc.), an aromatic hydrocarbon ring group (aromatic carbon) Also referred to as ring group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl Group, biphenylyl group, etc.), aromatic heterocyclic group (for example, pyridyl) , Pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl group, 1,2,3-triazole-1- Oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group, benzothienyl group, dibenzothienyl group, indolyl group, Carbazolyl group, carbolinyl group, diazacarbazolyl group (in which one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl group, pyridazinyl group, triazinyl group, quinazolinyl group, phthalazinyl Group), heterocycle (Eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group, octyloxy group, dodecyloxy group, etc.), Cycloalkoxy groups (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy groups (eg, phenoxy group, naphthyloxy group, etc.), alkylthio groups (eg, methylthio group, ethylthio group, propylthio group, pentylthio group, hexylthio group) , Octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenylthio group, naphthylthio group, etc.), alkoxycarbonyl group (eg, Methyloxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (eg, phenyloxycarbonyl group, naphthyloxycarbonyl group, etc.), sulfamoyl group (eg, Aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecylaminosulfonyl group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl groups (for example, acetyl group, ethylcarbonyl group, propylcarbonyl group, pentylcarbonyl group, Rohexylcarbonyl group, octylcarbonyl group, 2-ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group, naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (for example, acetyloxy group, ethylcarbonyloxy group, butylcarbonyloxy) Group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, propylcarbonylamino group, pentylcarbonylamino group, cyclohexyl group) Carbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group, dodecylcarbonylamino group, phenylcarbonylamino group, Tilcarbonylamino group, etc.), carbamoyl groups (for example, aminocarbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexylaminocarbonyl group, octylaminocarbonyl group, 2-ethylhexylamino) Carbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido group, pentylureido group, cyclohexylureido group, octylureido group) , Dodecylureido group, phenylureido group naphthylureido group, 2-pyridylaminoureido group, etc.), sulfinyl group (for example, methylsulfinyl group, ethyl) Rusulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.), alkylsulfonyl group (for example, methylsulfonyl group, ethylsulfonyl group) Group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl group or heteroarylsulfonyl group (for example, phenylsulfonyl group, naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.), amino Groups (for example, amino group, ethylamino group, dimethylamino group, butylamino group, cyclopentylamino group, 2-ethylhexylamino group, dodecylamino group, Nilino group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (eg, fluorine atom, chlorine atom, bromine atom etc.), fluorinated hydrocarbon group (eg, fluoromethyl group, trifluoromethyl group, pentafluoroethyl) Group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (for example, trimethylsilyl group, triisopropylsilyl group, triphenylsilyl group, phenyldiethylsilyl group, etc.).
X1−L1−X2は2座の配位子を表し、X1、X2は各々独立に炭素原子、窒素原子又は酸素原子を表す。L1はX1、X2と共に2座の配位子を形成する原子群を表す。X1−L1−X2で表される2座の配位子の具体例としては、置換又は無置換のフェニルピリジン、フェニルピラゾール、フェニルイミダゾール、フェニルトリアゾール、フェニルテトラゾール、ピラザボール、アセチルアセトン、ピコリン酸等が挙げられる。X 1 -L 1 -X 2 represents a bidentate ligand, and X 1 and X 2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom. L 1 represents an atomic group forming a bidentate ligand together with X 1 and X 2 . Specific examples of ligands of bidentate represented by X 1 -L 1 -X 2, a substituted or unsubstituted phenyl pyridine, phenylpyrazole, phenylimidazole, phenyl triazole, phenyl tetrazole, pyrazabole, acetylacetone, picolinic acid Etc.
m1は1、2又は3の整数を表し、m2は0、1又は2の整数を表すが、m1+m2は2又は3である。中でも、m2は0である場合が好ましい。 m1 represents an integer of 1, 2 or 3, m2 represents an integer of 0, 1 or 2, and m1 + m2 is 2 or 3. Especially, the case where m2 is 0 is preferable.
一般式(2)は好ましくは一般式(3)で表され、一般式(3)において、Zは炭化水素基、炭化水素環基又は複素環基を表し、これらは置換基を有していてもよい。 The general formula (2) is preferably represented by the general formula (3). In the general formula (3), Z represents a hydrocarbon group, a hydrocarbon ring group or a heterocyclic group, and these have a substituent. Also good.
炭化水素基としては、メチル基、エチル基、iso−プロピル基が挙げられる。炭化水素環基としては、非芳香族炭化水素環基、芳香族炭化水素環基が挙げられ、非芳香族炭化水素環基としては、シクロプロピル基、シクロペンチル基、シクロヘキシル基等が挙げられる。これらの基は、無置換でも後述する置換基を有していてもよい。また、芳香族炭化水素環基(芳香族炭化水素基、アリール基等とも言う)としては、例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等が挙げられる。 Examples of the hydrocarbon group include a methyl group, an ethyl group, and an iso-propyl group. Examples of the hydrocarbon ring group include a non-aromatic hydrocarbon ring group and an aromatic hydrocarbon ring group. Examples of the non-aromatic hydrocarbon ring group include a cyclopropyl group, a cyclopentyl group, and a cyclohexyl group. These groups may be unsubstituted or have a substituent described later. Examples of the aromatic hydrocarbon ring group (also referred to as aromatic hydrocarbon group, aryl group, etc.) include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl. Group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group and the like.
複素環基としては、非芳香族複素環基、芳香族複素環基が挙げられ、非芳香族複素環基における非芳香族複素環としては、例えば、エポキシ環、アジリジン環、チイラン環、オキセタン環、アゼチジン環、チエタン環、テトラヒドロフラン環、ジオキソラン環、ピロリジン環、ピラゾリジン環、イミダゾリジン環、オキサゾリジン環、テトラヒドロチオフェン環、スルホラン環、チアゾリジン環、ε−カプロラクトン環、ε−カプロラクタム環、ピペリジン環、ヘキサヒドロピリダジン環、ヘキサヒドロピリミジン環、ピペラジン環、モルホリン環、テトラヒドロピラン環、1,3−ジオキサン環、1,4−ジオキサン環、トリオキサン環、テトラヒドロチオピラン環、チオモルホリン環、チオモルホリン−1、1−ジオキシド環、ピラノース環、ジアザビシクロ[2,2,2]オクタン環等を上げることができ、これらから導出される基を挙げることができる。 Examples of the heterocyclic group include a non-aromatic heterocyclic group and an aromatic heterocyclic group. Examples of the non-aromatic heterocyclic ring in the non-aromatic heterocyclic group include an epoxy ring, an aziridine ring, a thiirane ring, and an oxetane ring. , Azetidine ring, thietane ring, tetrahydrofuran ring, dioxolane ring, pyrrolidine ring, pyrazolidine ring, imidazolidine ring, oxazolidine ring, tetrahydrothiophene ring, sulfolane ring, thiazolidine ring, ε-caprolactone ring, ε-caprolactam ring, piperidine ring, hexa Hydropyridazine ring, hexahydropyrimidine ring, piperazine ring, morpholine ring, tetrahydropyran ring, 1,3-dioxane ring, 1,4-dioxane ring, trioxane ring, tetrahydrothiopyran ring, thiomorpholine ring, thiomorpholine-1, 1-dioxide ring, pyranose Rings, diazabicyclo [2,2,2] octane rings and the like can be raised, and groups derived therefrom can be exemplified.
芳香族複素環基としては、例えば、ピリジル基、ピリミジニル基、フリル基、ピロリル基、イミダゾリル基、ベンゾイミダゾリル基、ピラゾリル基、ピラジニル基、トリアゾリル基(例えば、1,2,4−トリアゾール−1−イル基、1,2,3−トリアゾール−1−イル基等)、オキサゾリル基、ベンゾオキサゾリル基、チアゾリル基、イソオキサゾリル基、イソチアゾリル基、フラザニル基、チエニル基、キノリル基、ベンゾフリル基、ジベンゾフリル基、ベンゾチエニル基、ジベンゾチエニル基、インドリル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する炭素原子の一つが窒素原子で置き換わったものを示す)、キノキサリニル基、ピリダジニル基、トリアジニル基、キナゾリニル基、フタラジニル基等が挙げられる。これらの基は、無置換でも更に置換基を有していてもよい。これらの置換基としては、前記の、芳香族炭化水素環又は芳香族複素環における置換基と同義のものが挙げられる。 Examples of the aromatic heterocyclic group include pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl). Group, 1,2,3-triazol-1-yl group, etc.), oxazolyl group, benzoxazolyl group, thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group , Benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl Group, pyridazinyl group, triazinyl group, key Zoriniru group, phthalazinyl group, and the like. These groups may be unsubstituted or may further have a substituent. Examples of these substituents include those having the same meaning as the substituents in the aromatic hydrocarbon ring or aromatic heterocyclic ring.
また、前記一般式(3)において、Aは一般式(2)と同様に、6員の芳香族炭化水素環又は芳香族複素環を表すが、このうち、Aはベンゼン環を表すことが好ましい。 In the general formula (3), A represents a 6-membered aromatic hydrocarbon ring or aromatic heterocyclic ring as in the general formula (2), and among these, A preferably represents a benzene ring. .
また、一般式(3)においては、金属錯体化合物が同一の配位子のみで構成されることが好ましい。 Moreover, in General formula (3), it is preferable that a metal complex compound is comprised only with the same ligand.
m1は1、2又は3の整数、m2は0、1又は2の整数を表すが、m1+m2は2又は3である。中心金属であるMは元素周期表における8〜10族の金属を表す。 m1 represents an integer of 1, 2 or 3, m2 represents an integer of 0, 1 or 2, and m1 + m2 is 2 or 3. M, which is a central metal, represents a group 8-10 metal in the periodic table.
(元素周期表の8〜10族の遷移金属元素)
本発明に係る一般式(3)におけるMとしては、元素周期表の8〜10族の遷移金属元素(単に遷移金属とも言う)を表すが、中でも、イリジウム、プラチナが好ましい遷移金属元素として挙げられる。更に好ましくは、イリジウムが良い。(Transition metal element of group 8-10 of the periodic table)
M in the general formula (3) according to the present invention represents a group 8-10 transition metal element (also simply referred to as a transition metal) in the periodic table, and among them, iridium and platinum are preferable transition metal elements. . More preferably, iridium is good.
以下、一般式(3)におけるZの好ましい例を挙げるが、Zは以下の例示以外にも更に置換基を有していてもよいなどこれらの例に限定されない。なお、*は結合位置を表す。 Hereinafter, although the preferable example of Z in General formula (3) is given, Z is not limited to these examples, and may have a substituent other than the following illustrations. Note that * represents a bonding position.
以下、本発明に係る前記一般式(2)で表される金属錯体の具体例を示すが、本発明はこれらに限定されない。 Hereinafter, although the specific example of the metal complex represented by the said General formula (2) based on this invention is shown, this invention is not limited to these.
これらの金属錯体は、例えば、Organic Letter誌、vol3、No.16、2579〜2581頁(2001)、Inorganic Chemistry,第30巻、第8号、1685〜1687頁(1991年)、J.Am.Chem.Soc.,123巻、4304頁(2001年)、Inorganic Chemistry,第40巻、第7号、1704〜1711頁(2001年)、Inorganic Chemistry,第41巻、第12号、3055〜3066頁(2002年)、New Journal of Chemistry,第26巻、1171頁(2002年)、European Journal of Organic Chemistry,第4巻、695〜709頁(2004年)、更にこれらの文献中に記載の参考文献等の方法を適用することにより合成できる。 These metal complexes are described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, 3055-3066 (2002) New Journal of Chemistry, Vol. 26, page 1171 (2002), European Journal of Organic Chemistry, Vol. 4, pages 695-709 (2004), and methods such as references described in these documents. It can be synthesized by applying.
本発明は、有機EL素子における有機化合物層を、塗布、インクジェット、印刷、スプレーといった湿式法プロセスで積層するとき、薄膜を大面積に均一な膜で作製するのに適している。一般に、塗布法を用いて複数の層を積層するためには下層が上層の塗布液に溶解しないことが条件だが、数十nmオーダーの常に薄い膜であるがために、難溶性の溶剤を用いて上層を塗布しても下層の膜の溶け出し、又は溶媒によって界面が乱れてしまうという問題が生じるが、本発明においては、前記一般式(1)で表される部分構造を有する化合物が、常圧下、25度にて、iso−ブタノールに対する溶解度が、0.05g/L以下である化合物であるため、該化合物及び前記一般式(2)で表される金属錯体化合物を含有する発光層を成膜し発光層を形成したのち、発光層に隣接して電子輸送層を形成するについては、該電子輸送層を、n−ブタノール、又はiso−ブタノールを塗布溶媒として塗布、形成すると好ましいのである。上記の溶解度プロファイルを持つ発光層上に、電子輸送層を湿式法で形成するとき、このような下層材料の上層へのコンタミや界面の乱れが起こらず、有機EL素子を形成したとき発光効率の低下や素子寿命の劣化を引き起こすことがない。 The present invention is suitable for forming a thin film with a uniform film over a large area when the organic compound layer in the organic EL element is laminated by a wet process such as coating, ink jetting, printing, and spraying. In general, in order to stack multiple layers using the coating method, the lower layer must be insoluble in the upper layer coating solution. However, since it is a thin film on the order of several tens of nanometers, a poorly soluble solvent is used. Even if the upper layer is applied, the lower layer film dissolves or the interface is disturbed by the solvent, but in the present invention, the compound having the partial structure represented by the general formula (1), Since the compound has a solubility in iso-butanol of 0.05 g / L or less at 25 ° C. under normal pressure, a light emitting layer containing the compound and the metal complex compound represented by the general formula (2) is prepared. About forming an electron transport layer adjacent to the light emitting layer after forming a light emitting layer, it is preferable to apply and form the electron transport layer using n-butanol or iso-butanol as a coating solvent.When the electron transport layer is formed on the light emitting layer having the above-described solubility profile by a wet method, the contamination of the upper layer of the lower layer material and the disturbance of the interface do not occur, and when the organic EL element is formed, the luminous efficiency is improved. It does not cause a drop or deterioration of the device life.
湿式法としては、前記の塗布(スピンコート、バーコート、ダイコート、スプレー塗布等その方式は問わない)のほか、インクジェット法、例えばスクリーン印刷等の方法を含む。 As the wet method, in addition to the above-described application (spin coating, bar coating, die coating, spray coating, etc., any method may be used), an ink jet method, for example, a method such as screen printing is included.
また、前記一般式(1)で表される部分構造を有し、かつ常圧下、25℃における該化合物のiso−ブタノールに対する溶解度が0.05g/L以下である化合物、及び前記一般式(2)で表される金属錯体化合物を含有する発光層自身についても、生産性という観点で、湿式法で形成され、湿式法で形成された発光層上に、電子輸送層が更に湿式法により形成されることが好ましい。 Further, a compound having a partial structure represented by the general formula (1) and having a solubility in iso-butanol of 25 g or less at 25 ° C. under normal pressure, and the general formula (2) From the viewpoint of productivity, the light emitting layer itself containing the metal complex compound represented by) is formed by a wet method, and an electron transport layer is further formed by a wet method on the light emitting layer formed by the wet method. It is preferable.
本発明に係る前記一般式(1)で表される部分構造を有する化合物は、後述する本発明の有機EL素子の構成層のいずれの層においても用いることが出来るが、外部取り出し量子効率の向上、発光寿命の長寿命化の観点からは、発光層に含有されることが好ましい。 The compound having the partial structure represented by the general formula (1) according to the present invention can be used in any of the constituent layers of the organic EL device of the present invention described later, but the external extraction quantum efficiency is improved. From the viewpoint of extending the light emission lifetime, it is preferably contained in the light emitting layer.
また、本発明に係る発光ドーパントとしては、前記一般式(2)また(3)で表される金属錯体が好ましい。 Moreover, as a light emission dopant which concerns on this invention, the metal complex represented by the said General formula (2) or (3) is preferable.
《有機EL素子の構成層》
本発明の有機EL素子の構成層(機能層)について説明する。本発明において、有機EL素子の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。<< Constituent layers of organic EL elements >>
The constituent layer (functional layer) of the organic EL element of the present invention will be described. In this invention, although the preferable specific example of the layer structure of an organic EL element is shown below, this invention is not limited to these.
(i)陽極/発光層/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
本発明の有機EL素子においては、青色発光層の発光極大波長は430nm〜480nmにあるものが好ましく、緑色発光層は発光極大波長が510nm〜550nm、赤色発光層は発光極大波長が600nm〜640nmの範囲にある単色発光層であることが好ましく、これらを用いた表示装置であることが好ましい。また、これらの少なくとも3層の発光層を積層して白色発光層としたものであってもよい。更に、発光層間には非発光性の中間層を有していてもよい。本発明の有機EL素子としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。(I) Anode / light emitting layer / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer / hole blocking layer / electron Transport layer / cathode (iv) Anode / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) Anode / anode buffer layer / hole transport layer / light emitting layer / hole Blocking layer / electron transport layer / cathode buffer layer / cathode In the organic EL device of the present invention, the blue light emitting layer preferably has a light emission maximum wavelength of 430 nm to 480 nm, and the green light emitting layer has a light emission maximum wavelength of 510 nm to 550 nm, The red light emitting layer is preferably a monochromatic light emitting layer having a light emission maximum wavelength in the range of 600 nm to 640 nm, and is preferably a display device using these. Alternatively, a white light emitting layer may be formed by laminating at least three light emitting layers. Further, a non-light emitting intermediate layer may be provided between the light emitting layers. The organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
本発明の有機EL素子を構成する各層について説明する。 Each layer which comprises the organic EL element of this invention is demonstrated.
《発光層》
本発明に係る発光層は、電極又は電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。<Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
発光層の膜厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加するのを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、2nm〜5μmの範囲に調整することが好ましく、更に好ましくは2nm〜200nmの範囲に調整され、特に好ましくは、10nm〜80nmの範囲である。 The total film thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the uniformity of the film, preventing unnecessary application of high voltage during light emission, and improving the stability of the emission color with respect to the drive current. It is preferable to adjust in the range of 2 nm to 5 μm, more preferably in the range of 2 nm to 200 nm, and particularly preferably in the range of 10 nm to 80 nm.
発光層の作製には、後述する発光ドーパントやホスト化合物を、例えば、スピンコート法、ダイコート法等、塗布法や、また、インクジェット法、スクリーン印刷法、キャスト法、LB法等の湿式法、真空蒸着法等の公知の薄膜化法により製膜して形成することができる。本発明の化合物を発光層に用いる場合湿式法により形成することが好ましい。 For the production of the light emitting layer, a light emitting dopant and a host compound described later are applied, for example, a spin coating method, a die coating method, etc., a coating method, a wet method such as an ink jet method, a screen printing method, a casting method, an LB method, a vacuum. The film can be formed by a known thinning method such as a vapor deposition method. When using the compound of this invention for a light emitting layer, forming by a wet method is preferable.
本発明の有機EL素子の発光層には、発光ホスト化合物と、発光ドーパント(リン光発光性ドーパント(リン光発光性ドーパントともいう)や蛍光ドーパント等)の少なくとも1種類とを含有することが好ましい。 The light emitting layer of the organic EL device of the present invention preferably contains a light emitting host compound and at least one kind of light emitting dopant (phosphorescent dopant (also referred to as phosphorescent dopant) or fluorescent dopant). .
(ホスト化合物(発光ホスト等ともいう))
本発明において用いられるホスト化合物について説明する。(Host compound (also called luminescent host))
The host compound used in the present invention will be described.
ここで、本発明においてホスト化合物とは、発光層に含有される化合物の内でその層中での質量比が20%以上であり、且つ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。また、複数の発光層を有する場合、これら各層のホスト化合物の質量比20%以上が同一の化合物であることが、有機層全体に渡って均質な膜性状を得やすいことから好ましい。 Here, the host compound in the present invention is a phosphorescent quantum yield of phosphorescence emission at a room temperature (25 ° C.) having a mass ratio of 20% or more in the compound contained in the light emitting layer. Is defined as a compound of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer. Moreover, when it has a several light emitting layer, it is preferable that mass ratio 20% or more of the host compound of each of these layers is the same compound, since it is easy to obtain a uniform film property over the whole organic layer.
本発明に用いられるホスト化合物としては、前記一般式(1)で表される部分構造を有し、かつ常圧下、25℃における該化合物のiso−ブタノールに対する溶解度が0.05g/L以下であるする化合物を含有する。また、本発明においては、公知のホスト化合物を併用してもよい。 The host compound used in the present invention has a partial structure represented by the general formula (1), and the solubility of the compound in iso-butanol at 25 ° C. under normal pressure is 0.05 g / L or less. Containing compounds. In the present invention, a known host compound may be used in combination.
ホスト化合物としては、単独で用いてもよく、又は複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。 As a host compound, you may use individually or may be used in combination of multiple types. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient.
また、本発明において用いるホスト化合物はTgが100℃以上のものであることが好ましい。Tgが100℃より低いと素子の経時での劣化(城戸低下、膜性上の劣化)が大きく、また生産プロセス上においても乾燥工程等の面で制約が大きいため、好ましくない。すなわち、輝度と耐久性、生産性を満足するためにはTgが100℃以上であることが好ましい。Tgは更に好ましくは130℃以上である。 The host compound used in the present invention preferably has a Tg of 100 ° C. or higher. When Tg is lower than 100 ° C., the deterioration of the element with time (decreased doorway, deterioration in film properties) is large, and also in the production process, there are many restrictions in terms of the drying process and the like, which is not preferable. That is, in order to satisfy brightness, durability, and productivity, Tg is preferably 100 ° C. or higher. Tg is more preferably 130 ° C. or higher.
併用してもよい公知のホスト化合物としては、正孔輸送能、電子輸送能を有しつつ、且つ発光の長波長化を防ぎ、なお且つ高Tg(ガラス転移温度)である化合物が好ましい。 As a known host compound that may be used in combination, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
公知のホスト化合物の具体例としては、以下の文献に記載されている化合物が挙げられる。 Specific examples of known host compounds include compounds described in the following documents.
特開2001−257076号公報、同2002−308855号公報、同2001−313179号公報、同2002−319491号公報、同2001−357977号公報、同2002−334786号公報、同2002−8860号公報、同2002−334787号公報、同2002−15871号公報、同2002−334788号公報、同2002−43056号公報、同2002−334789号公報、同2002−75645号公報、同2002−338579号公報、同2002−105445号公報、同2002−343568号公報、同2002−141173号公報、同2002−352957号公報、同2002−203683号公報、同2002−363227号公報、同2002−231453号公報、同2003−3165号公報、同2002−234888号公報、同2003−27048号公報、同2002−255934号公報、同2002−260861号公報、同2002−280183号公報、同2002−299060号公報、同2002−302516号公報、同2002−305083号公報、同2002−305084号公報、同2002−308837号公報等。 JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
(発光ドーパント)
本発明に係る発光ドーパントについて説明する。(Luminescent dopant)
The light emitting dopant according to the present invention will be described.
本発明に係る発光ドーパントとしては、蛍光ドーパント(蛍光性化合物ともいう)、リン光発光性ドーパント(リン光発光体、リン光性化合物、リン光発光性化合物等ともいう)を用いることができるが、より発光効率の高い有機EL素子を得る観点からは、本発明の有機EL素子の発光層や発光ユニットに使用される発光ドーパント(単に、発光材料ということもある)としては、上記のホスト化合物を含有すると同時に、リン光発光性ドーパントを含有することが好ましい。 As the light-emitting dopant according to the present invention, a fluorescent dopant (also referred to as a fluorescent compound) or a phosphorescent dopant (also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like) can be used. From the viewpoint of obtaining an organic EL device having higher luminous efficiency, the above-mentioned host compound may be used as the luminescent dopant (simply referred to as a luminescent material) used in the light emitting layer or the light emitting unit of the organic EL device of the present invention. It is preferable to contain a phosphorescent dopant at the same time as containing.
(リン光発光性ドーパント)
本発明に係るリン光発光性ドーパントについて説明する。(Phosphorescent dopant)
The phosphorescent dopant according to the present invention will be described.
本発明に係るリン光発光性ドーパントは、励起三重項からの発光が観測される化合物であり、具体的には、室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。 The phosphorescent dopant according to the present invention is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.) and has a phosphorescence quantum yield. The phosphorescence quantum yield is preferably 0.1 or more, although it is defined as a compound of 0.01 or more at 25 ° C.
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光発光性ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence emitting dopant according to the present invention achieves the above phosphorescence quantum yield (0.01 or more) in any solvent. It only has to be done.
リン光発光性ドーパントの発光は原理としては2種挙げられ、一つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こってホスト化合物の励起状態が生成し、このエネルギーをリン光発光性ドーパントに移動させることでリン光発光性ドーパントからの発光を得るというエネルギー移動型、もう一つはリン光発光性ドーパントがキャリアトラップとなり、リン光発光性ドーパント上でキャリアの再結合が起こりリン光発光性ドーパントからの発光が得られるというキャリアトラップ型が挙げられる。 There are two types of light emission of phosphorescent dopants in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the host compound. The energy transfer type is to obtain light emission from the phosphorescent dopant by transferring to the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, and carrier recombination occurs on the phosphorescent dopant to cause phosphorescence. There is a carrier trap type in which light emission from a photoluminescent dopant can be obtained.
上記のいずれの場合においても、リン光発光性ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。 In any of the above cases, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
リン光発光性ドーパントとして、有機EL素子の発光層に使用される公知のものの中から適宜選択して用いることもできる。 As a phosphorescence-emitting dopant, it can also select from the well-known thing used for the light emitting layer of an organic EL element suitably, and can also use it.
本発明に係るリン光発光性ドーパントとしては、前記一般式(2)で表される金属錯体が用いられる。 As the phosphorescent dopant according to the present invention, a metal complex represented by the general formula (2) is used.
本発明に係るリン光発光性ドーパントとして用いられる化合物は、例えば、Inorg.Chem.40巻、1704〜1711に記載の方法等を参照して合成できる。 The compound used as the phosphorescent dopant according to the present invention is, for example, Inorg. Chem. 40, 1704 to 1711, and the like.
本発明においては、リン光発光性ドーパントのリン光発光極大波長としては特に制限されるものではなく、原理的には中心金属、配位子、配位子の置換基等を選択することで得られる発光波長を変化させることができる。 In the present invention, the phosphorescent maximum wavelength of the phosphorescent dopant is not particularly limited, and in principle can be obtained by selecting a central metal, a ligand, a ligand substituent, and the like. The emitted light wavelength can be changed.
(蛍光ドーパント(蛍光性化合物ともいう))
本発明においては、蛍光ドーパントを用いることができる。蛍光ドーパント(蛍光性化合物)としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、又は希土類錯体系蛍光体等が挙げられる。(Fluorescent dopant (also called fluorescent compound))
In the present invention, a fluorescent dopant can be used. Fluorescent dopants (fluorescent compounds) include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes Examples thereof include dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
次に、本発明の有機EL素子の構成層として用いられる、注入層、阻止層、電子輸送層等について説明する。 Next, an injection layer, a blocking layer, an electron transport layer, and the like used as a constituent layer of the organic EL element of the present invention will be described.
《注入層:電子注入層、正孔注入層》
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記の如く陽極と発光層又は正孔輸送層の間、及び陰極と発光層又は電子輸送層との間に存在させてもよい。<< Injection layer: electron injection layer, hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer, and between the cathode and the light emitting layer or the electron transport layer. May be.
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123〜166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
陽極バッファー層(正孔注入層)は、特開平9−45479号公報、同9−260062号公報、同8−288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層等が挙げられる。 The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
陰極バッファー層(電子注入層)は、特開平6−325871号公報、同9−17574号公報、同10−74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm〜5μmの範囲が好ましい。 The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.
《阻止層:正孔阻止層、電子阻止層》
阻止層は、上記の如く有機化合物薄膜の基本構成層のほかに必要に応じて設けられるものである。例えば、特開平11−204258号公報、同11−204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。<Blocking layer: hole blocking layer, electron blocking layer>
The blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.
正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する電子輸送層の構成を必要に応じて、本発明に係わる正孔阻止層として用いることができる。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。 The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
正孔阻止層には、前述のホスト化合物として挙げたアザカルバゾール誘導体を含有することが好ましい。 The hole blocking layer preferably contains the azacarbazole derivative mentioned as the host compound.
また、本発明においては、複数の発光色の異なる複数の発光層を有する場合、その発光極大波長が最も短波にある発光層が、全発光層中、最も陽極に近いことが好ましいが、このような場合、該最短波層と該層の次に陽極に近い発光層との間に正孔阻止層を追加して設けることが好ましい。更には、該位置に設けられる正孔阻止層に含有される化合物の50g/L以上が、前記最短波発光層のホスト化合物に対しそのイオン化ポテンシャルが0.3eV以上大きいことが好ましい。 In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the anode. Furthermore, the ionization potential of 50 g / L or more of the compound contained in the hole blocking layer provided at the position is preferably 0.3 eV or more larger than the host compound of the shortest wave emitting layer.
イオン化ポテンシャルは化合物のHOMO(最高被占分子軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーで定義され、例えば下記に示すような方法により求めることができる。 The ionization potential is defined by the energy required to emit an electron at the HOMO (highest occupied molecular orbital) level of the compound to the vacuum level, and can be obtained by the following method, for example.
(1)米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6−31G*を用いて構造最適化を行うことにより算出した値(eV単位換算値)の小数点第2位を四捨五入した値としてイオン化ポテンシャルを求めることができる。この計算値が有効な背景には、この手法で求めた計算値と実験値の相関が高いためである。 (1) Using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), a molecular orbital calculation software manufactured by Gaussian, USA The ionization potential can be obtained as a value obtained by rounding off the second decimal place of the value (eV unit converted value) calculated by performing structural optimization using B3LYP / 6-31G *. This calculation value is effective because the correlation between the calculation value obtained by this method and the experimental value is high.
(2)イオン化ポテンシャルは光電子分光法で直接測定する方法により求めることもできる。例えば、理研計器社製の低エネルギー電子分光装置「Model AC−1」を用いて、あるいは紫外光電子分光として知られている方法を好適に用いることができる。 (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a method known as ultraviolet photoelectron spectroscopy can be suitably used by using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd.
一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の膜厚としては、好ましくは3nm〜100nmであり、更に好ましくは5nm〜30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
《正孔輸送層》
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層又は複数層設けることができる。《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
正孔輸送材料としては、正孔の注入又は輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、また導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。 The hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′−テトラフェニル−4,4′−ジアミノフェニル;N,N′−ジフェニル−N,N′−ビス(3−メチルフェニル)−〔1,1′−ビフェニル〕−4,4′−ジアミン(TPD);2,2−ビス(4−ジ−p−トリルアミノフェニル)プロパン;1,1−ビス(4−ジ−p−トリルアミノフェニル)シクロヘキサン;N,N,N′,N′−テトラ−p−トリル−4,4′−ジアミノビフェニル;1,1−ビス(4−ジ−p−トリルアミノフェニル)−4−フェニルシクロヘキサン;ビス(4−ジメチルアミノ−2−メチルフェニル)フェニルメタン;ビス(4−ジ−p−トリルアミノフェニル)フェニルメタン;N,N′−ジフェニル−N,N′−ジ(4−メトキシフェニル)−4,4′−ジアミノビフェニル;N,N,N′,N′−テトラフェニル−4,4′−ジアミノジフェニルエーテル;4,4′−ビス(ジフェニルアミノ)クオードリフェニル;N,N,N−トリ(p−トリル)アミン;4−(ジ−p−トリルアミノ)−4′−〔4−(ジ−p−トリルアミノ)スチリル〕スチルベン;4−N,N−ジフェニルアミノ−(2−ジフェニルビニル)ベンゼン;3−メトキシ−4′−N,N−ジフェニルアミノスチルベンゼン;N−フェニルカルバゾール、更には米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′−ビス〔N−(1−ナフチル)−N−フェニルアミノ〕ビフェニル(NPD)、特開平4−308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″−トリス〔N−(3−メチルフェニル)−N−フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-4,4'-diaminophenyl; N, N'-diphenyl-N, N'- Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' − (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4′-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two of those described in US Pat. No. 5,061,569. Having a condensed aromatic ring in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-3086 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 8 are linked in a starburst type ( MTDATA) and the like.
更にこれらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。また、p型−Si、p型−SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、特開平11−251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、所謂p型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることからこれらの材料を用いることが好ましい。 JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜として形成することができる。しかしながら、例えば、陽極から正孔輸送層、発光層と積層・形成してゆく場合、正孔輸送層もまた、湿式法である、塗布、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等により形成されその上に、本発明の化合物を含む発光層が、同じく湿式法により形成されることが好ましい。 The hole transport layer can be formed as a thin film from the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, or an LB method. However, for example, in the case of laminating and forming a positive hole transport layer and a light emitting layer from the anode, the positive hole transport layer is also a wet method, coating, spin coating method, casting method, printing method including ink jet method, It is preferable that the light emitting layer formed by the LB method or the like and containing the compound of the present invention is similarly formed by the wet method.
正孔輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5nm〜200nmである。この正孔輸送層は上記材料の1種又は2種以上からなる一層構造であってもよい。 Although there is no restriction | limiting in particular about the film thickness of a positive hole transport layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. This hole transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4−297076号公報、特開2000−196140号公報、同2001−102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
《電子輸送層》
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層又は複数層設けることができる。《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.
従来、単層の電子輸送層、及び複数層とする場合は発光層に対して陰極側に隣接する電子輸送層に用いられる電子輸送材料(正孔阻止材料を兼ねる)としては、陰極より注入された電子を発光層に伝達する機能を有していればよく、その材料としては従来公知の化合物の中から任意のものを選択して用いることができる。 Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode. Any material may be used as long as it has a function of transferring electrons to the light-emitting layer, and any material can be selected from conventionally known compounds.
電子輸送層中に用いられる化合物としては、例えば、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体等が挙げられる。 Examples of compounds used in the electron transport layer include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives, and the like. Can be mentioned.
更に上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送材料として用いることができる。更にこれらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
また、8−キノリノール誘導体の金属錯体、例えば、トリス(8−キノリノール)アルミニウム(Alq)、トリス(5,7−ジクロロ−8−キノリノール)アルミニウム、トリス(5,7−ジブロモ−8−キノリノール)アルミニウム、トリス(2−メチル−8−キノリノール)アルミニウム、トリス(5−メチル−8−キノリノール)アルミニウム、ビス(8−キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、Ga又はPbに置き換わった金属錯体も、電子輸送材料として用いることができる。 In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the electron transport material.
その他、メタルフリー若しくはメタルフタロシアニン、又はそれらの末端がアルキル基やスルホン酸基等で置換されているものも、電子輸送材料として好ましく用いることができる。また、発光層の材料として例示したジスチリルピラジン誘導体も、電子輸送材料として用いることができるし、正孔注入層、正孔輸送層と同様にn型−Si、n型−SiC等の無機半導体も電子輸送材料として用いることができる。 In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transport material. In addition, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as an electron transport material, and an inorganic semiconductor such as n-type-Si, n-type-SiC, etc. as in the case of the hole injection layer and the hole transport layer. Can also be used as an electron transporting material.
例えば、陽極から正孔輸送層、発光層と積層形成する場合、電子輸送層は上記電子輸送材料を、湿式法である、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の湿式法により、例えば、本発明の化合物を含む発光層上に積層・形成できる。 For example, when the positive hole transport layer and the light emitting layer are laminated from the anode, the electron transport layer is formed by using the above electron transport material as a wet method, such as a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. For example, it can be laminated and formed on the light emitting layer containing the compound of the present invention by a wet method.
電子輸送層は、n−ブタノール、またiso−ブタノールを塗布溶媒として用い上記湿式法で形成されることが好ましい。 The electron transport layer is preferably formed by the above wet method using n-butanol or iso-butanol as a coating solvent.
勿論、発光層の隣接層の一方については、湿式法以外の方法、例えば蒸着等の方法で形成されてることも構わない。 Of course, one of the adjacent layers of the light emitting layer may be formed by a method other than the wet method, for example, a method such as vapor deposition.
電子輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5nm〜200nmである。電子輸送層は上記材料の1種又は2種以上からなる一層構造であってもよい。 Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたn性の高い電子輸送層を用いることもできる。その例としては、特開平4−297076号公報、同10−270172号公報、特開2000−196140号公報、同2001−102175号公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Further, an electron transport layer having a high n property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなn性の高い電子輸送層を用いることがより低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use an electron transport layer having such a high n property because an element with lower power consumption can be manufactured.
《反応性有機化合物》
また、本発明では、上記の各機能層において、反応性基をもつ有機化合物(反応性有機化合物)を用いてもよい。反応性有機化合物を用いる層としては特に制限はなく、各層に用いることができる。それぞれ各機能層に反応性基をもつそれぞれの機能を持つ有機材料を用いればよい。《Reactive organic compound》
In the present invention, an organic compound having a reactive group (reactive organic compound) may be used in each functional layer. There is no restriction | limiting in particular as a layer using a reactive organic compound, It can use for each layer. An organic material having a function having a reactive group in each functional layer may be used.
反応性有機化合物を基板上で反応させ、有機分子によるネットワークポリマーを形成させることができる。ネットワークポリマーが生成することで、構成層のTg(ガラス転移点)調整による素子劣化の抑制させることができる。 A reactive organic compound can be reacted on a substrate to form a network polymer of organic molecules. Generation | occurrence | production of a network polymer can suppress element deterioration by Tg (glass transition point) adjustment of a structure layer.
また、素子使用中の活性ラジカルを用いて分子の共役系の切断又は生成を伴う反応を調整することにより、有機EL素子の発光波長を変えたり、特定波長の劣化を抑制すること等も可能である。 It is also possible to change the emission wavelength of the organic EL element, suppress deterioration of the specific wavelength, etc. by adjusting the reaction accompanied by the cleavage or generation of the conjugated system of the molecule using the active radical in use. is there.
一方、製造面では、例えば、ウェットプロセスで積層する工程の場合では、下層が上層の塗布液に溶解しないことが好ましいため、下層を樹脂化し溶剤溶解性を劣化させることで、上層塗布を可能とすることができる。例えば、正孔輸送層をこのように架橋した有機層として樹脂化することで、上層として発光層を塗布する際に下層の溶解、又浸透を防止することができる。 On the other hand, on the manufacturing side, for example, in the case of a step of laminating by a wet process, it is preferable that the lower layer does not dissolve in the upper layer coating solution, so that the upper layer can be applied by resinizing the lower layer and degrading solvent solubility. can do. For example, when the hole transport layer is resinized as an organic layer thus crosslinked, dissolution and penetration of the lower layer can be prevented when the light emitting layer is applied as the upper layer.
用いることのできる反応性基としては、特に限定されないが、例えば、ビニル基、エチニル基、イソシアネート基、エポキシ基等が代表的には挙げられる。 Although it does not specifically limit as a reactive group which can be used, For example, a vinyl group, an ethynyl group, an isocyanate group, an epoxy group etc. are mentioned typically.
《陽極》
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used.
このような電極物質の具体例としては、Au等の金属、CuI、インジウムチンオキシド(ITO)、SnO2、ZnO等の導電性透明材料が挙げられる。Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
また、IDIXO(In2O3−ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material.
あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式製膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常10nm〜1000nm、好ましくは10nm〜200nmの範囲で選ばれる。 Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.
《陰極》
一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム−カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al2O3) mixture. , Indium, lithium / aluminum mixtures, rare earth metals and the like.
これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm〜5μm、好ましくは50nm〜200nmの範囲で選ばれる。尚、発光した光を透過させるため、有機EL素子の陽極又は陰極のいずれか一方が透明又は半透明であれば発光輝度が向上し好都合である。 The sheet resistance as a cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm. In order to transmit the emitted light, if either the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.
また、陰極に上記金属を1nm〜20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明又は半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 Moreover, after producing the said metal by the film thickness of 1 nm-20 nm to a cathode, the transparent or semi-transparent cathode can be produced by producing the electroconductive transparent material quoted by description of the anode on it, By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
《支持基板》
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等とも言う)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。《Support substrate》
As a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類又はそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。 Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones, Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.
樹脂フィルムの表面には、無機物、有機物の被膜又はその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129−1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が0.01g/(m2・24h)以下のバリア性フィルムであることが好ましく、更には、JIS K 7126−1987に準拠した方法で測定された酸素透過度が、10−3cm3/(m2・24h・MPa)以下、水蒸気透過度が、10−5g/(m2・24h)以下の高バリア性フィルムであることが好ましい。An inorganic film, an organic film, or a hybrid film of both may be formed on the surface of the resin film, and the water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ± 2)% RH) is preferably 0.01 g / (m 2 · 24 h) or less, and further, oxygen measured by a method according to JIS K 7126-1987. A high barrier film having a permeability of 10 −3 cm 3 / (m 2 · 24 h · MPa) or less and a water vapor permeability of 10 −5 g / (m 2 · 24 h) or less is preferable.
バリア膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 As a material for forming the barrier film, any material may be used as long as it has a function of suppressing entry of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
バリア膜の形成方法については特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004−68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。 The method for forming the barrier film is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
本発明の有機EL素子の発光の室温における外部取り出し効率は、1%以上であることが好ましく、より好ましくは5%以上である。 The external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more.
ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。 Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を、蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
《封止》
本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and concave plate shape or flat plate shape may be sufficient. Further, transparency and electrical insulation are not particularly limited.
具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等を挙げることができる。金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる一種以上の金属又は合金からなるものが挙げられる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。更には、ポリマーフィルムは、JIS K 7126−1987に準拠した方法で測定された酸素透過度が1×10−3cm3/(m2・24h・MPa)以下、JIS K 7129−1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10−3g/(m2・24h)以下のものであることが好ましい。In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 cm 3 / (m 2 · 24 h · MPa) or less, and conforms to JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured by the method is preferably 1 × 10 −3 g / (m 2 · 24 h) or less. .
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2−シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。 Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。 In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
また、有機層を挟み支持基板と対向する側の電極の外側に該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can. Further, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster-ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
封止部材と有機EL素子の表示領域との間隙には、気相及び液相では、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
《保護膜、保護板》
有機層を挟み支持基板と対向する側の前記封止膜、あるいは前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、あるいは保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量且つ薄膜化ということからポリマーフィルムを用いることが好ましい。《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, and the like used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
《光取り出し》
有機EL素子は空気よりも屈折率の高い(屈折率が1.7〜2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4,774,435号明細書)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63−314795号公報)、素子の側面等に反射面を形成する方法(特開平1−220394号公報)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62−172691号公報)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001−202827号公報)、基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法(特開平11−283751号公報)等がある。 As a method for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), A method of improving efficiency by providing a light collecting property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on a side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from a substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No. 62-172691), a flat having a lower refractive index between the substrate and the light emitter than the substrate A method of introducing a layer (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of a substrate, a transparent electrode layer and a light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951) Gazette).
本発明においては、これらの方法を本発明の有機EL素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、あるいは基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法を好適に用いることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
本発明はこれらの手段を組み合わせることにより、更に高輝度あるいは耐久性に優れた素子を得ることができる。 In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.
透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚みで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど外部への取り出し効率が高くなる。 When a medium having a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower.
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5〜1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、更に1.35以下であることが好ましい。 Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
また、低屈折率媒質の厚みは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚みが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
全反射を起こす界面若しくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は回折格子が1次の回折や2次の回折といった所謂ブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち層間での全反射等により外に出ることができない光を、いずれかの層間若しくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。 The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Of these, light that cannot go out due to total reflection between layers, etc. is diffracted by introducing a diffraction grating into any layer or medium (inside a transparent substrate or transparent electrode). I want to take it out.
導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な1次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
回折格子を導入する位置としては前述の通り、いずれかの層間若しくは媒質中(透明基板内や透明電極内)でもよいが、光が発生する場所である有機発光層の近傍が望ましい。 As described above, the position where the diffraction grating is introduced may be in any one of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
このとき、回折格子の周期は媒質中の光の波長の約1/2〜3倍程度が好ましい。 At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、二次元的に配列が繰り返されることが好ましい。 The arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
《集光シート》
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。<Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface. By condensing in the front direction, the luminance in a specific direction can be increased.
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を二次元に配列する。一辺は10μm〜100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚みが厚くなり好ましくない。 As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
集光シートとしては、例えば、液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして、例えば、住友スリーエム社製輝度上昇フィルム(BEF)等を用いることができる。プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
《有機EL素子の作製方法》
本発明の有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極からなる有機EL素子の作製法を説明する。<< Method for producing organic EL element >>
As an example of the method for producing the organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
まず適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10nm〜200nmの膜厚になるように、蒸着やスパッタリング等の方法により形成させ陽極を作製する。 First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate so as to have a film thickness of 1 μm or less, preferably 10 nm to 200 nm, to form an anode.
次に、この上に有機EL素子材料である正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層、正孔阻止層の有機化合物薄膜を形成させる。 Next, an organic compound thin film of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole blocking layer, which are organic EL element materials, is formed thereon.
これら各層の形成方法としては、前記の如く蒸着法、ウェットプロセス(スピンコート法、キャスト法、インクジェット法、印刷法)等があるが、均質な膜が得られやすく、且つ、ピンホールが生成しにくい等の点から、本発明においてはスピンコート法、インクジェット法、印刷法等の塗布法による製膜が好ましい。 As a method for forming each of these layers, there are a vapor deposition method and a wet process (spin coating method, casting method, ink jet method, printing method) as described above, but it is easy to obtain a uniform film and a pinhole is generated. In view of difficulty, etc., in the present invention, film formation by a coating method such as a spin coating method, an ink jet method, or a printing method is preferable.
本発明に係る有機EL材料を溶解又は分散する液媒体としては、前記ブタノール等のアルコール類のほか、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。また分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 As a liquid medium for dissolving or dispersing the organic EL material according to the present invention, in addition to alcohols such as butanol, ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, and halogenated substances such as dichlorobenzene Hydrocarbons, aromatic hydrocarbons such as toluene, xylene, mesitylene, and cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as DMF and DMSO can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
これらの層を形成後、その上に陰極用物質からなる薄膜を1μm以下、好ましくは、50nm〜200nmの範囲の膜厚になるように、例えば、蒸着やスパッタリング等の方法により形成させ、陰極を設けることにより所望の有機EL素子が得られる。 After these layers are formed, a thin film made of a cathode material is formed thereon by 1 μm or less, preferably by a method such as vapor deposition or sputtering so that the film thickness is in the range of 50 nm to 200 nm. By providing, a desired organic EL element can be obtained.
また作製順序を逆にして、陰極、電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。このようにして得られた多色の表示装置に、直流電圧を印加する場合には陽極を+、陰極を−の極性として電圧2〜40V程度を印加すると発光が観測できる。また交流電圧を印加してもよい。なお、印加する交流の波形は任意でよい。 In addition, it is also possible to reverse the production order and produce the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode in this order. When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.
《用途》
本発明の有機EL素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。<Application>
The organic EL element of the present invention can be used as a display device, a display, and various light emission sources. For example, lighting devices (home lighting, interior lighting), clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
本発明の有機EL素子においては、必要に応じ製膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。 In the organic EL device of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like at the time of film formation, if necessary. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the device may be patterned. Can do.
本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図4.16において、分光放射輝度計CS−1000(コニカミノルタセンシング社製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with the total CS-1000 (manufactured by Konica Minolta Sensing) is applied to the CIE chromaticity coordinates.
また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることをいう。When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
以下、実施例により本発明を説明するが、本発明はこれらに限定されない。 EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these.
実施例1
《溶解度の測定》
25度の環境下、iso−ブタノール100mlに表Aに示される化合物を各々5mg加えて、3時間撹拌した後、完全に化合物が溶解したか否かを目視で確認し、完溶したものを○、しなかったものを×とした。完溶しなかったものが本発明の化合物に相当する。Example 1
<Measurement of solubility>
Under an environment of 25 ° C., 5 mg of each of the compounds shown in Table A was added to 100 ml of iso-butanol and stirred for 3 hours. Then, it was visually confirmed whether or not the compound was completely dissolved. What was not done was set as x. Those not completely dissolved correspond to the compound of the present invention.
実施例2
《有機EL素子の2−1の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 2
<< Production of Organic EL Element 2-1 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After forming the film by spin coating, the film was dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
この基板を窒素雰囲気下に移し、正孔輸送層上に、50mgの正孔輸送材料1を10mlのトルエンに溶解した溶液を1500rpm、30秒の条件下、スピンコート法により製膜した。窒素雰囲気下、180秒間紫外光を照射し、光重合・架橋を行い、膜厚約20nmの第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of the hole transport material 1 dissolved in 10 ml of toluene was formed on the hole transport layer by spin coating at 1500 rpm for 30 seconds. In a nitrogen atmosphere, ultraviolet light was irradiated for 180 seconds to perform photopolymerization / crosslinking to form a second hole transport layer having a thickness of about 20 nm.
この第2正孔輸送層上に、100mgのPVKと10mgのドーパント4を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。120℃で1時間真空乾燥し、膜厚約50nmの発光層とした。 On this 2nd hole transport layer, the film which melt | dissolved 100 mg PVK and 10 mg dopant 4 in 10 ml toluene was formed into a film by the spin coat method on 1000 rpm and 30 second conditions. It vacuum-dried at 120 degreeC for 1 hour, and was set as the light emitting layer with a film thickness of about 50 nm.
次にこの発光層上に、50mgの電子輸送材料1を10mlの1−ブタノールに溶解した溶液を5000rpm、30秒の条件下、スピンコート法により製膜した。60℃で1時間真空乾燥し、膜厚約15nmの電子輸送層とした。 Next, a solution obtained by dissolving 50 mg of the electron transport material 1 in 10 ml of 1-butanol was formed on this light emitting layer by spin coating under a condition of 5000 rpm for 30 seconds. It vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 15 nm.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10−4Paまで減圧し、陰極バッファー層としてフッ化リチウム1.0nm及び陰極としてアルミニウム110nmを蒸着して陰極を形成し、有機EL素子2−4を作製した。Subsequently, this substrate is fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber is decompressed to 4 × 10 −4 Pa, lithium fluoride 1.0 nm is deposited as a cathode buffer layer, and aluminum 110 nm is deposited as a cathode to form a cathode. Then, an organic EL element 2-4 was produced.
《有機EL素子2−1〜2−12の作製》
有機EL素子2−4の作製において、PVKを表2に示す化合物に置き換えた以外は有機EL素子2−4と同様にして有機EL素子を各々作製しようとしたが、有機EL素子2−1〜2−3は電子輸送層を塗る際に発光層が溶け出し、素子が作成できなかった。有機EL素子2−5〜2−12は有機EL素子2−4と同様に作成できた。<< Production of Organic EL Elements 2-1 to 2-12 >>
In the production of the organic EL element 2-4, an attempt was made to produce each of the organic EL elements in the same manner as in the organic EL element 2-4 except that PVK was replaced with the compounds shown in Table 2. In 2-3, when the electron transport layer was applied, the light emitting layer melted, and the device could not be formed. Organic EL elements 2-5 to 2-12 could be prepared in the same manner as organic EL element 2-4.
《有機EL素子2−4〜2−12の評価》
得られた有機EL素子2−4〜2−12を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図2、図3に示すような照明装置を形成して評価した。<< Evaluation of Organic EL Elements 2-4 to 2-12 >>
When evaluating the obtained organic EL elements 2-4 to 2-12, the non-light emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 2 and 3 was formed and evaluated.
図2は、照明装置の概略図を示し、有機EL素子201は、ガラスカバー202で覆われている。尚、ガラスカバーでの封止作業は、有機EL素子201を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下で行った)。 FIG. 2 is a schematic diagram of the lighting device, and the organic EL element 201 is covered with a glass cover 202. Note that the sealing operation with the glass cover was performed in a glove box in a nitrogen atmosphere without bringing the organic EL element 201 into contact with the atmosphere (in a high purity nitrogen gas atmosphere with a purity of 99.999% or more).
図3は、本発明の照明装置の一態様を示す断面図であり、図3において、205は陰極、206は有機EL層、207は透明電極付きガラス基板を示す。尚、ガラスカバー202内には窒素ガス208が充填され、捕水剤209が設けられている。 FIG. 3 is a cross-sectional view illustrating one embodiment of the lighting device of the present invention. In FIG. 3, reference numeral 205 denotes a cathode, 206 denotes an organic EL layer, and 207 denotes a glass substrate with a transparent electrode. The glass cover 202 is filled with nitrogen gas 208 and a water catching agent 209 is provided.
次いで、下記のようにして外部取り出し量子効率及び発光寿命を測定した。 Next, the external extraction quantum efficiency and emission lifetime were measured as follows.
(外部取りだし量子効率)
作製した有機EL素子について、23℃、乾燥窒素ガス雰囲気下で2.5mA/cm2、定電流を印加したときの外部取り出し量子効率(%)を測定した。(External extraction quantum efficiency)
About the produced organic EL element, the external extraction quantum efficiency (%) when applying a constant current of 2.5 mA / cm 2 at 23 ° C. in a dry nitrogen gas atmosphere was measured.
尚、測定には同様に分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。 For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used in the same manner.
表2の外部取りだし量子効率の測定結果は、有機EL素子2−4の測定値を100としたときの相対値で表した。 The measurement results of the external extraction quantum efficiency in Table 2 are expressed as relative values when the measurement value of the organic EL element 2-4 is 100.
(寿命)
2.5mA/cm2の一定電流で駆動したときに、輝度が発光開始直後の輝度(初期輝度)の半分に低下するのに要した時間を測定し、これを半減寿命時間(τ0.5)として寿命の指標とした。(lifespan)
When driven at a constant current of 2.5 mA / cm 2 , the time required for the luminance to drop to half of the luminance immediately after the start of light emission (initial luminance) was measured, and this was calculated as the half-life time (τ 0.5). As an index of life.
尚、測定には分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。 For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used.
表2の寿命の測定結果は、有機EL素子2−4を100としたとき相対値で表した。 The lifetime measurement results in Table 2 are expressed as relative values when the organic EL element 2-4 is 100.
得られた結果を表2に示す。 The obtained results are shown in Table 2.
表2から、比較に比べて、本発明の有機EL素子は、高い外部取り出し量子効率を示し、低駆動電圧であり、且つ、発光寿命が長いことが明らかである。 From Table 2, it is clear that the organic EL device of the present invention exhibits high external extraction quantum efficiency, a low driving voltage, and a long emission lifetime as compared with the comparison.
実施例3
《有機EL素子の3−4の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 3
<< Production of Organic EL Element 3-4 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After forming the film by spin coating, the film was dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
この基板を窒素雰囲気下に移し、正孔輸送層上に、50mgの正孔輸送材料2を10mlのトルエンに溶解した溶液を1500rpm、30秒の条件下、スピンコート法により製膜した。窒素雰囲気下、180秒間紫外光を照射し、光重合・架橋を行い、膜厚約20nmの第2正孔輸送層とした。 The substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of the hole transport material 2 dissolved in 10 ml of toluene was formed on the hole transport layer by spin coating at 1500 rpm for 30 seconds. In a nitrogen atmosphere, ultraviolet light was irradiated for 180 seconds to perform photopolymerization / crosslinking to form a second hole transport layer having a thickness of about 20 nm.
この第二正孔輸送層上に、100mgのPVKと10mgのドーパント5を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。120℃で1時間真空乾燥し、膜厚約50nmの発光層とした。 On this second hole transport layer, a solution prepared by dissolving 100 mg of PVK and 10 mg of dopant 5 in 10 ml of toluene was formed by spin coating at 1000 rpm for 30 seconds. It vacuum-dried at 120 degreeC for 1 hour, and was set as the light emitting layer with a film thickness of about 50 nm.
次にこの発光層上に、50mgの電子輸送材料2を10mlのiso−ブタノールに溶解した溶液を5000rpm、30秒の条件下、スピンコート法により製膜した。60℃で一時間真空乾燥し、膜厚約20nmの電子輸送層とした。 Next, a solution obtained by dissolving 50 mg of the electron transporting material 2 in 10 ml of iso-butanol was formed on this light emitting layer by spin coating at 5000 rpm for 30 seconds. It vacuum-dried at 60 degreeC for 1 hour, and was set as the electron carrying layer with a film thickness of about 20 nm.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、真空槽を4×10−4Paまで減圧し、陰極バッファー層としてフッ化リチウム1.0nm及び陰極としてアルミニウム110nmを蒸着して陰極を形成し、有機EL素子3−4を作製した。Subsequently, this substrate is fixed to a substrate holder of a vacuum deposition apparatus, the vacuum chamber is decompressed to 4 × 10 −4 Pa, lithium fluoride 1.0 nm is deposited as a cathode buffer layer, and aluminum 110 nm is deposited as a cathode to form a cathode. Then, an organic EL element 3-4 was produced.
《有機EL素子3−1〜3−10の作製》
有機EL素子3−4の作製において、PVKを表3に示す化合物に置き換えた以外は有機EL素子3−4と同様にして有機EL素子を各々作製しようとしたが、有機EL素子3−1〜3−3は電子輸送層を塗る際に発光層が溶け出し、素子が作成できなかった。有機EL素子3−5〜3−10は有機EL素子3−4と同様に作成できた。<< Production of Organic EL Elements 3-1 to 3-10 >>
In the production of the organic EL element 3-4, an attempt was made to produce each of the organic EL elements in the same manner as in the organic EL element 3-4 except that PVK was replaced with the compounds shown in Table 3. In 3-3, when the electron transport layer was applied, the light emitting layer melted, and the device could not be formed. Organic EL elements 3-5 to 3-10 were prepared in the same manner as organic EL element 3-4.
有機EL素子3−4〜3−10を各々作製した。 Organic EL elements 3-4 to 3-10 were produced.
《有機EL素子3−4〜3−10の評価》
得られた有機EL素子3−4〜3−10を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図2、図3に示すような照明装置を形成して評価した。<< Evaluation of Organic EL Elements 3-4 to 3-10 >>
When evaluating the obtained organic EL elements 3-4 to 3-10, the non-light-emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 2 and 3 was formed and evaluated.
図2は、照明装置の概略図を示し、有機EL素子201は、ガラスカバー202で覆われている。尚、ガラスカバーでの封止作業は、有機EL素子201を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下で行った)。 FIG. 2 is a schematic diagram of the lighting device, and the organic EL element 201 is covered with a glass cover 202. Note that the sealing operation with the glass cover was performed in a glove box in a nitrogen atmosphere without bringing the organic EL element 201 into contact with the atmosphere (in a high purity nitrogen gas atmosphere with a purity of 99.999% or more).
図3は、本発明の照明装置の一態様を示す断面図であり、図3において、205は陰極、206は有機EL層、207は透明電極付きガラス基板を示す。尚、ガラスカバー202内には窒素ガス208が充填され、捕水剤209が設けられている。 FIG. 3 is a cross-sectional view illustrating one embodiment of the lighting device of the present invention. In FIG. 3, reference numeral 205 denotes a cathode, 206 denotes an organic EL layer, and 207 denotes a glass substrate with a transparent electrode. The glass cover 202 is filled with nitrogen gas 208 and a water catching agent 209 is provided.
次いで、下記のようにして外部取り出し量子効率及び発光寿命を測定した。 Next, the external extraction quantum efficiency and emission lifetime were measured as follows.
(外部取りだし量子効率)
作製した有機EL素子について、23℃、乾燥窒素ガス雰囲気下で2.5mA/cm2定電流を印加した時の外部取り出し量子効率(%)を測定した。(External extraction quantum efficiency)
About the produced organic EL element, external extraction quantum efficiency (%) when 2.5 mA / cm 2 constant current was applied in a dry nitrogen gas atmosphere at 23 ° C. was measured.
尚、測定には同様に分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。 For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used in the same manner.
表1の外部取りだし量子効率の測定結果は、有機EL素子3−4の測定値を100とした時の相対値で表した。 The measurement results of the external extraction quantum efficiency in Table 1 are expressed as relative values when the measurement value of the organic EL element 3-4 is 100.
(寿命)
2.5mA/cm2の一定電流で駆動したときに、輝度が発光開始直後の輝度(初期輝度)の半分に低下するのに要した時間を測定し、これを半減寿命時間(τ0.5)として寿命の指標とした。(lifespan)
When driven at a constant current of 2.5 mA / cm 2 , the time required for the luminance to drop to half of the luminance immediately after the start of light emission (initial luminance) was measured, and this was calculated as the half-life time (τ 0.5). As an index of life.
尚、測定には分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。 For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used.
また、表1の寿命の測定結果は、有機EL素子3−4を100としたときの相対値で表した。 Moreover, the measurement result of the lifetime of Table 1 was represented by the relative value when the organic EL element 3-4 was set to 100.
得られた結果を表3に示す。 The obtained results are shown in Table 3.
表3から、比較に比べて、本発明の有機EL素子は、高い外部取り出し量子効率を示し、低駆動電圧であり、且つ、発光寿命が長いことが明らかである。 From Table 3, it is clear that the organic EL device of the present invention exhibits a high external extraction quantum efficiency, a low driving voltage, and a long emission lifetime as compared with the comparison.
実施例4
《有機ELフルカラー表示装置の作製》
図1は有機ELフルカラー表示装置の概略構成図を示す。陽極としてガラス基板101上にITO透明電極(102)を100nm製膜した基板(NHテクノグラス社製NA45)に100μmのピッチでパターニングを行った後、このガラス基板上でITO透明電極の間に非感光性ポリイミドの隔壁103(幅20μm、厚さ2.0μm)をフォトリソグラフィーで形成させた。Example 4
<< Production of organic EL full-color display device >>
FIG. 1 shows a schematic configuration diagram of an organic EL full-color display device. After patterning at a pitch of 100 μm on a substrate (NH45 manufactured by NH Techno Glass Co., Ltd.) formed by forming a 100 nm ITO transparent electrode (102) on a glass substrate 101 as an anode, non-between the ITO transparent electrodes on this glass substrate. A photosensitive polyimide partition 103 (width 20 μm, thickness 2.0 μm) was formed by photolithography.
ITO電極上ポリイミド隔壁の間に下記組成の正孔注入層組成物を、インクジェットヘッド(エプソン社製;MJ800C)を用いて吐出注入し、紫外光を2分間照射し、60℃、10分間の乾燥処理により膜厚40nmの正孔注入層104を作製した。 A hole injection layer composition having the following composition is ejected and injected between polyimide partition walls on the ITO electrode using an inkjet head (manufactured by Epson; MJ800C), irradiated with ultraviolet light for 2 minutes, and dried at 60 ° C. for 10 minutes. A hole injection layer 104 having a thickness of 40 nm was produced by the treatment.
この正孔注入層上に、各々下記の青色発光層組成物、緑色発光層組成物、赤色発光層組成物を同様にインクジェットヘッドを使用して吐出注入し、60℃、10分間乾燥処理し、それぞれの発光層(105B,105G,105R)を形成させた。最後に発光層105を覆うように、陰極としてAl(106)を真空蒸着して有機EL素子を作製した。 On the hole injection layer, the following blue light-emitting layer composition, green light-emitting layer composition, and red light-emitting layer composition were similarly discharged and injected using an inkjet head, and dried at 60 ° C. for 10 minutes. Each light emitting layer (105B, 105G, 105R) was formed. Finally, Al (106) was vacuum-deposited as a cathode so as to cover the light emitting layer 105, and an organic EL element was produced.
作製した有機EL素子はそれぞれの電極に電圧を印加することにより各々青色、緑色、赤色の発光を示し、フルカラー表示装置として利用できることがわかった。 It was found that the produced organic EL element showed blue, green, and red light emission by applying a voltage to each electrode, and could be used as a full-color display device.
(正孔注入層組成物)
正孔輸送材料1 20質量部
シクロヘキシルベンゼン 50質量部
イソプロピルビフェニル 50質量部
(青色発光層組成物)
化合物例1−1 0.7質量部
ドーパント4 0.04質量部
シクロヘキシルベンゼン 50質量部
イソプロピルビフェニル 50質量部
(緑色発光層組成物)
化合物例1−1 0.7質量部
ドーパント1 0.04質量部
シクロヘキシルベンゼン 50質量部
イソプロピルビフェニル 50質量部
(赤色発光層組成物)
化合物例1−1 0.7質量部
ドーパント2 0.04質量部
シクロヘキシルベンゼン 50質量部
イソプロピルビフェニル 50質量部
(電子輸送層組成物)
電子輸送材料1 20質量部
1−ブタノール 50質量部
イソプロピルビフェニル 50質量部(Hole injection layer composition)
Hole transport material 1 20 parts by mass cyclohexylbenzene 50 parts by mass Isopropylbiphenyl 50 parts by mass (blue light emitting layer composition)
Compound Example 1-1 0.7 parts by mass of dopant 4 0.04 parts by mass of cyclohexylbenzene 50 parts by mass of isopropyl biphenyl 50 parts by mass (green light emitting layer composition)
Compound Example 1-1 0.7 parts by mass of dopant 1 0.04 parts by mass of cyclohexylbenzene 50 parts by mass of isopropyl biphenyl 50 parts by mass (red light emitting layer composition)
Compound Example 1-1 0.7 parts by mass of dopant 2 0.04 parts by mass of cyclohexylbenzene 50 parts by mass of isopropyl biphenyl 50 parts by mass (electron transport layer composition)
Electron transport material 1 20 parts by mass 1-butanol 50 parts by mass Isopropyl biphenyl 50 parts by mass
実施例5
《白色の有機EL素子5−1の作製》
実施例2の透明電極基板上に、実施例2と同様に正孔輸送層/第2の正孔輸送層をスピンコート法により形成し、更に発光層として、100mgの化合物例1−1、10mgのドーパント5及び0.1mgのドーパント3を10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。120℃で1時間真空乾燥し、膜厚約50nmの発光層とした。Example 5
<< Production of White Organic EL Element 5-1 >>
A hole transport layer / second hole transport layer was formed on the transparent electrode substrate of Example 2 by the spin coating method in the same manner as in Example 2, and 100 mg of Compound Example 1-1, 10 mg as a light emitting layer was further formed. A solution prepared by dissolving 5 mg of dopant 5 and 0.1 mg of dopant 3 in 10 ml of toluene was formed into a film by spin coating under conditions of 1000 rpm and 30 seconds. It vacuum-dried at 120 degreeC for 1 hour, and was set as the light emitting layer with a film thickness of about 50 nm.
次いで、実施例2と同様に、電子輸送層及びフッ化リチウム層、アルミニウム陰極を形成し、白色発光有機EL素子5−1を作製した。得られた有機EL素子5−1を実施例2と同様にして封止した。 Next, in the same manner as in Example 2, an electron transport layer, a lithium fluoride layer, and an aluminum cathode were formed to produce a white light-emitting organic EL element 5-1. The obtained organic EL element 5-1 was sealed in the same manner as in Example 2.
この有機EL素子5−1に通電したところほぼ白色の光が得られ、照明装置として使用できることがわかった。尚、ホスト化合物を本発明に係る他の化合物に置き換えても同様に白色の発光が得られることが分かった。 When this organic EL element 5-1 was energized, almost white light was obtained, and it was found that it could be used as a lighting device. In addition, it turned out that white light emission is obtained similarly even if it replaces a host compound with the other compound which concerns on this invention.
実施例6
《有機EL素子6−1の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 6
<< Production of Organic EL Element 6-1 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を用い、3000rpm、30秒の条件でスピンコート法により薄膜を形成した後、200℃にて1時間乾燥し、膜厚20nmの正孔輸送層を設けた。 On this transparent support substrate, using a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water, 3000 rpm, A thin film was formed by spin coating under conditions of 30 seconds and then dried at 200 ° C. for 1 hour to provide a 20 nm-thick hole transport layer.
この基板を窒素雰囲気下に移し、正孔輸送層上に、50mgの正孔輸送材料3と5mgの正孔輸送材料4とを10mlのトルエンに溶解した混合溶液を1500rpm、30秒の条件で正孔輸送層上にスピンコーティングし、薄膜を形成した。更に180秒間紫外光を照射し、光重合・架橋を行い、膜厚約20nmの第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a mixed solution prepared by dissolving 50 mg of the hole transporting material 3 and 5 mg of the hole transporting material 4 in 10 ml of toluene on the hole transporting layer was positive at 1500 rpm for 30 seconds. A thin film was formed by spin coating on the hole transport layer. Further, ultraviolet light was irradiated for 180 seconds to carry out photopolymerization and crosslinking, thereby forming a second hole transport layer having a thickness of about 20 nm.
この第2正孔輸送層上に、100mgの比較化合物3と10mgの(162)を10mlのトルエンに溶解した溶液を用いて600rpm、30秒の条件でスピンコート法により薄膜を形成した。60℃で1時間真空乾燥し、膜厚約70nmの発光層とした。 On this second hole transport layer, a thin film was formed by spin coating using a solution obtained by dissolving 100 mg of Comparative Compound 3 and 10 mg of (162) in 10 ml of toluene at 600 rpm for 30 seconds. It vacuum-dried at 60 degreeC for 1 hour, and was set as the light emitting layer with a film thickness of about 70 nm.
次にこの発光層上に、50mgの電子輸送材料3を10mlのヘキサフルオロイソプロパノール(HFIP)に溶解した溶液を用いて、2000rpm、30秒の条件でスピンコート法により薄膜を形成した。更に60℃で1時間真空乾燥し、第1電子輸送層とした。 Next, a thin film was formed on the light emitting layer by a spin coating method using a solution obtained by dissolving 50 mg of the electron transport material 3 in 10 ml of hexafluoroisopropanol (HFIP) at 2000 rpm for 30 seconds. Furthermore, it vacuum-dried at 60 degreeC for 1 hour, and was set as the 1st electron carrying layer.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、モリブデン製抵抗加熱ボートに電子輸送材料2を200mg入れ、真空蒸着装置に取り付けた。真空槽を4×10−4Paまで減圧した後、電子輸送材料2の入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で前記第1電子輸送層の上に蒸着して、更に膜厚20nmの第2電子輸送層を設けた。Subsequently, this substrate was fixed to a substrate holder of a vacuum vapor deposition apparatus, 200 mg of the electron transport material 2 was put into a molybdenum resistance heating boat, and attached to the vacuum vapor deposition apparatus. After depressurizing the vacuum chamber to 4 × 10 −4 Pa, the heating boat containing the electron transport material 2 is energized and heated, and deposited on the first electron transport layer at a deposition rate of 0.1 nm / second. Further, a second electron transport layer having a thickness of 20 nm was provided.
引き続き、フッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、有機EL素子6−1を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the organic EL element 6-1 was produced.
有機EL素子6−1の作製において、比較化合物3を化合物例1−2に置き換えた以外は有機EL素子6−1と同様にして有機EL素子6−2を作製した。 In the production of the organic EL element 6-1, an organic EL element 6-2 was produced in the same manner as the organic EL element 6-1, except that the comparative compound 3 was replaced with Compound Example 1-2.
《有機EL素子6−1、6−2の評価》
得られた有機EL素子6−1及び6−2を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図2、図3に示すような照明装置を形成して評価した。<< Evaluation of Organic EL Elements 6-1 and 6-2 >>
When evaluating the obtained organic EL elements 6-1 and 6-2, the non-light-emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 2 and 3 was formed and evaluated.
図2は、照明装置の概略図を示し、有機EL素子201は、ガラスカバー202で覆われている。尚、ガラスカバーでの封止作業は、有機EL素子201を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った。 FIG. 2 is a schematic diagram of the lighting device, and the organic EL element 201 is covered with a glass cover 202. The sealing operation with the glass cover was performed in a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more) without bringing the organic EL element 201 into contact with the atmosphere.
図3は、本発明の照明装置の一態様を示す断面図であり、図3において、205は陰極、206は有機EL層、207は透明電極付きガラス基板を示す。尚、ガラスカバー202内には窒素ガス208が充填され、捕水剤209が設けられている。 FIG. 3 is a cross-sectional view illustrating one embodiment of the lighting device of the present invention. In FIG. 3, reference numeral 205 denotes a cathode, 206 denotes an organic EL layer, and 207 denotes a glass substrate with a transparent electrode. The glass cover 202 is filled with nitrogen gas 208 and a water catching agent 209 is provided.
次いで、下記のようにして外部取り出し量子効率及び発光寿命を測定した。 Next, the external extraction quantum efficiency and emission lifetime were measured as follows.
(外部取りだし量子効率)
作製した有機EL素子について、23℃、乾燥窒素ガス雰囲気下で2.5mA/cm2定電流を印加した時の外部取り出し量子効率(%)を測定した。尚、測定には同様に分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。また、表4の外部取りだし量子効率の測定結果は、有機EL素子2−4の測定値を100としたときの相対値で表した。(External extraction quantum efficiency)
About the produced organic EL element, external extraction quantum efficiency (%) when 2.5 mA / cm 2 constant current was applied in a dry nitrogen gas atmosphere at 23 ° C. was measured. For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used in the same manner. Moreover, the measurement result of the external extraction quantum efficiency in Table 4 was expressed as a relative value when the measurement value of the organic EL element 2-4 was set to 100.
(寿命)
2.5mA/cm2の一定電流で駆動したときに、輝度が発光開始直後の輝度(初期輝度)の半分に低下するのに要した時間を測定し、これを半減寿命時間(τ0.5)として寿命の指標とした。尚、測定には分光放射輝度計CS−1000(コニカミノルタセンシング社製)を用いた。また、表4の寿命の測定結果は、有機EL素子6−1を100とした時の相対値で表した。(lifespan)
When driven at a constant current of 2.5 mA / cm 2 , the time required for the luminance to drop to half of the luminance immediately after the start of light emission (initial luminance) was measured, and this was calculated as the half-life time (τ 0.5). As an index of life. For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used. Moreover, the measurement result of the lifetime of Table 4 was represented by the relative value when the organic EL element 6-1 was set to 100.
得られた結果を表4にしめす。 The results obtained are shown in Table 4.
Claims (20)
下記一般式(1)で表される部分構造を有し、かつ常圧下、25℃におけるiso−ブタノールに対する溶解度が0.05g/L以下である化合物、及び下記一般式(2)で表される金属錯体化合物を含有する前記発光層を形成する工程と、
前記発光層上に、湿式法により前記電子輸送層を形成する工程と、
を有することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
A compound having a partial structure represented by the following general formula (1) and having a solubility in iso-butanol at 25 ° C. under normal pressure of 0.05 g / L or less, and represented by the following general formula (2) Forming the light emitting layer containing a metal complex compound;
Forming the electron transport layer on the light emitting layer by a wet method;
The manufacturing method of the organic electroluminescent element characterized by having.
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WO2008146838A1 (en) * | 2007-05-30 | 2008-12-04 | Konica Minolta Holdings, Inc. | Organic electroluminescent device, display device and illuminating device |
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JP2004171808A (en) * | 2002-11-18 | 2004-06-17 | Konica Minolta Holdings Inc | Organic electroluminescent element and display device |
JP2005093159A (en) * | 2003-09-16 | 2005-04-07 | Konica Minolta Holdings Inc | Organic electroluminescent element, display device, and lighting device |
JP2007180147A (en) * | 2005-12-27 | 2007-07-12 | Konica Minolta Holdings Inc | Organic electroluminescence element, material thereof, display and illumination apparatus |
WO2007119816A1 (en) * | 2006-04-19 | 2007-10-25 | Konica Minolta Holdings, Inc. | Organic electroluminescence element material, organic electroluminescence element, display device and lighting apparatus |
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